CN106556810B - Magnetic resistance static characteristic optimization method based on internal bias field hard axis direction - Google Patents
Magnetic resistance static characteristic optimization method based on internal bias field hard axis direction Download PDFInfo
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- CN106556810B CN106556810B CN201611025137.8A CN201611025137A CN106556810B CN 106556810 B CN106556810 B CN 106556810B CN 201611025137 A CN201611025137 A CN 201611025137A CN 106556810 B CN106556810 B CN 106556810B
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
Abstract
The present invention relates to static nature optimisation technique fields, disclose a kind of magnetic resistance static characteristic optimization method based on internal bias field hard axis direction.Specifically includes the following steps: step 1, setting easy axis bias-field to steady state value, the value of setting hard axis bias-field obtains sensing curve；Step 2, the maximum value h for choosing specific magnetic-field measurement rangeFM, sensing curve is passed through into objective functionOptimization obtains sensitivity k, biasing b and absolute error Err；Step 3, the maximum value h for choosing different magnetic-field measurement rangesFM, repeat step 2；Step 4, the value for choosing different hard axis bias-fields repeat step 1-3, obtain the relation curve in N the absolute error Err and magnetic-field measurement range of the same two-dimensional coordinate A；Step 5 makes the smallest hard axis bias-field analog value of absolute error according under two-dimensional coordinate acquisition specific magnetic fields measurement range and specific easily axis bias-field.By adjusting hard axis bias-field, bigger linear region is obtained.
Description
Technical field
The present invention relates to static nature optimisation technique field, especially a kind of magnetic resistance based on internal bias field hard axis direction
Static characteristic optimization method.
Background technique
In tunnel magneto chip development process, influence of the measurement accuracy to chip is extremely important.Static linear characteristic is tunnel
Key property one of of the magnetoresistive chip in linear measurement is worn, so needing to reduce non-linear mistake by modulation internal bias field
Difference, Lai Tigao measurement accuracy.
Summary of the invention
The technical problems to be solved by the present invention are: in view of the above problems, providing a kind of based on internal bias
The magnetic resistance static characteristic optimization method in field hard axis direction.
The technical solution adopted by the invention is as follows: a kind of magnetic resistance static characteristic optimization based on internal bias field hard axis direction
Method, specifically includes the following steps:
Step 1 sets easy axis bias-field to steady state value, the value of hard axis bias-field is arranged, according to the output of sensor
Function obtains change rate of magnetic reluctance on two-dimensional coordinate and normalizes the sensing curve of magnetic field dependence；
Step 2, the maximum value h for choosing specific magnetic-field measurement rangeFM, sensing curve is passed through into objective functionOptimization, wherein f (hF) be electric bridge chip output function, hFFor external magnetic field, hFM
For the maximum value of magnetic-field measurement range, k, b are the sensitivity and biasing of chip, obtain sensitivity k, biasing b and absolute error
Err；
Step 3, the maximum value h for choosing different magnetic-field measurement rangesFM, repeat step 2, obtain current easily axis bias-field and
The relation curve of absolute error Err, sensitivity k, biasing b and magnetic-field measurement range under hard axis bias-field value；
Step 4, the value for choosing N-1 different hard axis bias-fields, the N are the natural number greater than 2, repeat step 1-
3, obtain the relation curve of N absolute error Err and magnetic-field measurement range, the N absolute error Err and magnetic-field measurement range
Relation curve in the same two-dimensional coordinate A, every absolute error Err is corresponding different from the relation curve of magnetic-field measurement range
Hard axis bias-field value；
Step 5 makes absolutely according under two-dimensional coordinate A acquisition specific magnetic fields measurement range and specific easily axis bias-field
To the smallest hard axis bias-field analog value of error.
Further, easy axis bias-field is set as zero or is set as non-zero by increasing magnetic layer in the step 1
Steady state value.
Output function in the further step 1 are as follows:
Wherein VSP, VSN, VOP, VONThe respectively positive-negative power of electric bridge chip and positive negative output；R1And R2Respectively indicate first
Tunnel magneto resistance and the second tunnel magneto；ΔmaxFor maximum magnetoresistive ratio；For the free layer magnetic of the first tunnel magneto
Change direction,For the free layer direction of magnetization of the second tunnel magneto.
Further, the detailed process of the step 2 are as follows:
Step 21, the maximum value of magnetic field h for choosing specific measurement rangeFM, interception magnetic-field measurement range is-hFM~hFMBetween
Sensing curve；
Step 22 is lived the sensing curve after intercepting using two parallel lines envelopes, and is made between two parallel lines
Distance it is minimum；
Parallel lines among step 23, two parallel lines is the target line after optimization, the target line
Slope and be respectively sensitivity k and biasing b with the intersection point of ordinate；
Step 24, to obtain envelope straight line and target line be absolute error Err at a distance from ordinate intersection point, or by institute
It states sensitivity k and biases the value substitution objective function of bAcquire specific measurement
The maximum value of magnetic field h of rangeFMUnder absolute error Err.
Further, according to nonlinearity erron FS%=Err/ | kXFM|, obtain N nonlinearity erron and magnetic-field measurement model
The relation curve of the relation curve enclosed, the N nonlinearity erron and magnetic-field measurement range is in the same two-dimensional coordinate B, often
The value of absolute error Err and the corresponding different hard axis bias-field of the relation curve of magnetic-field measurement range；According to two-dimensional coordinate B
It obtains and makes the smallest hard axis bias-field analog value of nonlinearity erron under specific magnetic fields measurement range and specific easily axis bias-field.
Compared with prior art, by adopting the above technical scheme have the beneficial effect that sensing curve optimize, pass through tune
Whole hard axis direction biasing, reduces the nonlinearity erron of tunnel magneto sensor, obtains bigger linear region.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the electric bridge model used.
Fig. 2 be free layer bias-field be (0,0.5) when sensing curve analogous diagram.
Fig. 3 is easy axis bias-field when being 1, and nonlinearity erron and magnetic-field measurement range shows in the case of different hard axis bias-fields
It is intended to.
Specific embodiment
The present invention is described further with reference to the accompanying drawing.
As shown in Figure 1-3, a kind of magnetic resistance static characteristic optimization method based on internal bias field hard axis direction, specifically includes
Following steps:
Step 1 sets easy axis bias-field to steady state value, the value of hard axis bias-field is arranged, according to the output of sensor
Function obtains change rate of magnetic reluctance on two-dimensional coordinate and normalizes the sensing curve of magnetic field dependence；
Step 2, the maximum value h for choosing specific magnetic-field measurement rangeFM, sensing curve is passed through into objective functionOptimization, wherein f (hF) be electric bridge chip output function, hFFor external magnetic field, hFM
For the maximum value of magnetic field of measurement range, k, b are the sensitivity and biasing of chip, obtain sensitivity k, biasing b and absolute error
Err；
Step 3, the maximum value h for choosing different magnetic-field measurement rangesFM, repeat step 2, obtain current easily axis bias-field and
The relation curve of absolute error Err, sensitivity k, biasing b and magnetic-field measurement range under hard axis bias-field value；
Step 4, the value for choosing N-1 different hard axis bias-fields, the N are the natural number greater than 2, repeat step 1-
3, obtain the relation curve of N absolute error Err and magnetic-field measurement range, the N absolute error Err and magnetic-field measurement range
Relation curve in the same two-dimensional coordinate A, with N number of different hard axis bias-field value；
Step 5 makes absolutely according under two-dimensional coordinate A acquisition specific magnetic fields measurement range and specific easily axis bias-field
To the smallest hard axis bias-field analog value of error.
The establishment process of output model is as follows:
It is as shown in Figure 1 the electric bridge model used, founding mathematical models are as follows:
Wherein hBFIndicate the internal bias field normalizing value of free layer, hFIndicate external magnetic field each layer normalizing value,For
The free layer direction of magnetization of first tunnel magneto,For the free layer direction of magnetization of the second tunnelling magnetic group；θBFFor free layer
Internal bias magnetic direction, θ are external magnetic field direction, and tunnel magneto resistance and the relationship of free layer, the reference layer direction of magnetization are Wherein R1And R2Respectively indicate the first tunnelling magnetic
Hinder resistance and the second tunnel magneto, ΔmaxFor maximum magnetoresistive ratio, RavgFor average resistance, establishing output function isWherein VSP, VSN, VOP, VONRespectively electric bridge chip
Positive-negative power and positive negative output.
The steady state value that easy axis bias-field is set as zero or is set as non-zero by increasing magnetic layer in the step 1.
Easy axis bias-field is constant be set as 1 implementation column: by taking the value of hard axis bias-field is 0.5 as an example, according to output letter
Number obtains change rate of magnetic reluctance on two-dimensional coordinate and normalizes the sensing curve of magnetic field dependence, such as the block curve in Fig. 2；
It carries out the process of step 2: choosing the maximum value h of specific magnetic-field measurement rangeFM, interception magnetic-field measurement range be-
hFM~hFMBetween sensing curve, h in this implementation columnFM2 are taken, the solid line in curve such as Fig. 2 is sensed；Utilize two parallel lines packets
Network lives the sensing curve after intercepting, and makes the distance among two parallel lines minimum, in two parallel lines such as figure
Two dotted lines of two sides；Parallel lines between two parallel lines is the target line after optimization, the target line
Slope and be respectively sensitivity k and biasing b with the intersection point of ordinate；Envelope straight line and target line are obtained in ordinate intersection point
Distance as absolute error Err, or the value of the sensitivity k and biasing b are substituted into objective functionAcquire the maximum value h of specific magnetic-field measurement rangeFMAbsolute mistake under being 2
Poor Err.
Choose the maximum value h of different magnetic-field measurement rangesFM, hard axis is biased to 0.5, when easy axis is biased to 1 at this time, repeats
Step 2, the current easily axis bias-field of acquisition is 1 and hard axis bias-field is the absolute error Err and magnetic-field measurement range under 0.5 value
Relation curve；
Choose the value of different hard axis bias-fields, including 0,1,1.5, step 1-3 is repeated, 4 absolute error Err are obtained
With the relation curve of magnetic-field measurement range, the relation curve of 4 absolute error Err and magnetic-field measurement range is same two
It ties up in coordinate A；Easy axis bias-field is 1 at this time, and every absolute error Err and the relation curve of magnetic-field measurement range respectively correspond
Different hard axis bias-field values, including 0,0.5,1,1.5；According to the two-dimensional coordinate A obtain specific magnetic fields measurement range and
Make the smallest hard axis bias-field analog value of absolute error under specific easily axis bias-field.
According to nonlinearity erron FS%=Err/ | kXFM|, the relationship for obtaining 4 nonlinearity errons and magnetic-field measurement range is bent
The relation curve of line, 4 nonlinearity errons and magnetic-field measurement range is in the same two-dimensional coordinate B, as shown in figure 3, tool
There is the value of 4 different hard axis bias-fields；At this point, easily axis bias-field is Isosorbide-5-Nitrae nonlinearity erron and magnetic-field measurement range
Relation curve respectively correspond 4 different hard axis bias-field values, including 0,0.5,1,1.5, corresponding curve such as Fig. 3
In curve 1, curve 2, curve 3 and curve 4.
It is obtained according to two-dimensional coordinate B and makes nonlinearity erron most under specific magnetic fields measurement range and specific easily axis bias-field
Small hard axis bias-field analog value.Any one magnetic-field measurement range, which can be searched, from two-dimensional coordinate B corresponds to least absolute error
When hard axis bias-field value.
The invention is not limited to specific embodiments above-mentioned.The present invention, which expands to, any in the present specification to be disclosed
New feature or any new combination, and disclose any new method or process the step of or any new combination.If this
Field technical staff is altered or modified not departing from the unsubstantiality that spirit of the invention is done, should belong to power of the present invention
The claimed range of benefit.
Claims (4)
1. a kind of magnetic resistance static characteristic optimization method based on internal bias field hard axis direction, which is characterized in that including following step
It is rapid:
Step 1 sets easy axis bias-field to steady state value, the value of hard axis bias-field is arranged, according to the output function of sensor
Change rate of magnetic reluctance is obtained on two-dimensional coordinate and normalizes the sensing curve of magnetic field dependence；
Step 2, the maximum value h for choosing specific magnetic-field measurement rangeFM, sensing curve is passed through into objective functionOptimization, wherein f (hF) be electric bridge chip output function, hFFor external magnetic field, hFM
For the maximum value of magnetic-field measurement range, k, b are the sensitivity and biasing of chip, obtain sensitivity k, biasing b and absolute error
Err；
The detailed process of optimization are as follows:
Step 21, the maximum value h for choosing specific magnetic-field measurement rangeFM, interception magnetic-field measurement range is-hFM~hFMBetween biography
Feel curve；
Step 22, using two parallel lines envelopes live intercept after sensing curve, and make between two parallel lines away from
From minimum；
Parallel lines among step 23, two parallel lines is the target line after optimization, the slope of the target line
It and with the intersection point of ordinate is respectively sensitivity k and biasing b；
Step 24, to obtain envelope straight line and target line be absolute error Err at a distance from ordinate intersection point, or by the spirit
The value of sensitivity k and biasing b substitute into objective functionAcquire specific magnetic-field measurement
The maximum value h of rangeFMUnder absolute error Err；
Step 3, the maximum value h for choosing different magnetic-field measurement rangesFM, step 2 is repeated, current easily axis bias-field and hard axis are obtained
The relation curve of absolute error Err, sensitivity k, biasing b and magnetic-field measurement range under bias-field value；
Step 4, the value for choosing N-1 different hard axis bias-fields, the N are the natural number greater than 2, repeat step 1-3, obtain
Take the relation curve of N absolute error Err and magnetic-field measurement range, the pass of the N absolute error Err and magnetic-field measurement range
It is curve in the same two-dimensional coordinate A, every absolute error Err and the corresponding different difficulty of the relation curve of magnetic-field measurement range
The value of axis bias-field；
Step 5 makes absolutely accidentally according under two-dimensional coordinate A acquisition specific magnetic fields measurement range and specific easily axis bias-field
The smallest hard axis bias-field analog value of difference.
2. as claimed in claim 1 based on the magnetic resistance static characteristic optimization method in internal bias field hard axis direction, which is characterized in that institute
State the steady state value that easy axis bias-field in step 1 is set as zero or is set as non-zero by increasing magnetic layer.
3. as described in claim 1 based on the magnetic resistance static characteristic optimization method in internal bias field hard axis direction, feature exists
In output function in the step 1 are as follows:
Wherein VSP, VSN, VOP, VONThe respectively positive-negative power of electric bridge chip and positive negative output；R1And R2Respectively indicate the first tunnelling
Magnetic resistance resistance and the second tunnel magneto；ΔmaxFor maximum magnetoresistive ratio；Magnetize for the free layer of the first tunnel magneto
Direction,For the free layer direction of magnetization of the second tunnel magneto.
4. as claimed in claim 1 based on the magnetic resistance static characteristic optimization method in internal bias field hard axis direction, which is characterized in that also
Including following procedure: according to nonlinearity erron FS%=Err/ | kXFM|, obtain N nonlinearity erron and magnetic-field measurement range
The relation curve of relation curve, the N nonlinearity erron and magnetic-field measurement range has N number of in the same two-dimensional coordinate B
The value of different hard axis bias-fields；It is obtained under specific magnetic fields measurement range and specific easily axis bias-field according to two-dimensional coordinate B
So that the smallest hard axis bias-field analog value of nonlinearity erron.
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Citations (2)
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|---|---|---|---|---|
| CN102707246A (en) * | 2011-03-28 | 2012-10-03 | 新科实业有限公司 | Method for measuring longitudinal bias magnetic field in tunneling magnetoresistive sensor |
| CN103424128A (en) * | 2012-05-22 | 2013-12-04 | 英飞凌科技股份有限公司 | Offset error compensation systems and methods in sensors |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8203337B2 (en) * | 2009-06-15 | 2012-06-19 | Headway Technologies, Inc. | Elimination of errors due to aging in magneto-resistive devices |
| US8248063B2 (en) * | 2009-08-17 | 2012-08-21 | Headway Technologies, Inc. | Open loop magneto-resistive magnetic field sensor |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102707246A (en) * | 2011-03-28 | 2012-10-03 | 新科实业有限公司 | Method for measuring longitudinal bias magnetic field in tunneling magnetoresistive sensor |
| CN103424128A (en) * | 2012-05-22 | 2013-12-04 | 英飞凌科技股份有限公司 | Offset error compensation systems and methods in sensors |
Non-Patent Citations (1)
| Title |
|---|
| Prediction and Optimization of Linearity of MTJ Magnetic Sensors Based on Single-Domain Model;Yong Ouyang et al;《IEEE TRANSACTIONS ON MAGNETICS》;20151130;第51卷(第11期);第1-4页 |
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