CN106549078A - 四象限雪崩探测器组件 - Google Patents

四象限雪崩探测器组件 Download PDF

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CN106549078A
CN106549078A CN201611008032.1A CN201611008032A CN106549078A CN 106549078 A CN106549078 A CN 106549078A CN 201611008032 A CN201611008032 A CN 201611008032A CN 106549078 A CN106549078 A CN 106549078A
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CN106549078B (zh
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谭千里
张兴
曹飞
黄烈云
曾武贤
黎小刚
亓林
杨昕仪
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CETC 44 Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Fire-Detection Mechanisms (AREA)

Abstract

一种四象限雪崩探测器组件，所述四象限雪崩探测器组件由管壳、管座、多根引脚、安装座、四个雪崩探测器、制冷器和四路放大器电路组成；本发明的有益技术效果是：提供了一种四象限雪崩探测器组件，该探测器组件性能较好，结构设计合理。

Description

四象限雪崩探测器组件
技术领域
本发明涉及一种光电探测器组件，尤其涉及一种四象限雪崩探测器组件。
背景技术
现有技术中，常见的四象限光电探测器一般采用普通的PIN光电二极管探测器，相比于雪崩探测器，PIN光电二极管探测器的信噪比较低，探测距离较短，导致采用PIN光电二极管探测器的四象限光电探测系统的性能较低。
发明内容
针对背景技术中的问题，本发明提出了一种四象限雪崩探测器组件，其创新在于：所述四象限雪崩探测器组件由管壳、管座、多根引脚、安装座、四个雪崩探测器、制冷器和四路放大器电路组成；
所述管壳下端与管座上端面焊接固定，管壳上端设置有光窗；管座上被管壳覆盖的区域形成安装区；管座上安装区的中部设置设置有安装槽，安装座下端设置在安装槽内，安装座与管壳之间留有间隙；安装槽的槽底中部设置有喇叭孔，喇叭孔的上端口与安装座底面连通，喇叭孔下端口的口径大于上端口的口径；安装座底面上设置有制冷器安装槽，制冷器上部插接在制冷器安装槽内，制冷器下部与管座连接；管座上喇叭孔的外围设置有多个引脚孔，引脚孔位于安装区范围内，多根引脚一一对应地设置在引脚孔内；雪崩探测器的底部与安装座的上端面连接，雪崩探测器的光敏面朝上，所述光敏面与所述光窗位置对正，雪崩探测器的光敏面为圆心角为直角的扇形，四个雪崩探测器的光敏面拼接在一起形成圆形；雪崩探测器的输出端与放大器电路的输入端连接，四个雪崩探测器与四路放大器电路一一对应，四路放大器电路贴装在管座的周向侧壁上，放大器电路的输出端通过引脚向外引出。
在本发明中，采用了性能更为优秀的雪崩探测器来形成探测象限，可以有效提高探测器组件的信噪比，增大探测距离；另外，本发明结构紧凑，空间利用率较高，且各个部分均为分体式结构，十分便于组装，可大大提高加工效率。
本发明的有益技术效果是：提供了一种四象限雪崩探测器组件，该探测器组件性能较好，结构设计合理。
附图说明
图1、本发明的结构示意图；
图2、四个雪崩探测器光敏面拼接结构示意图；
图中各个标记所对应的名称分别为：管壳1、管座2、引脚3、安装座4、雪崩探测器5、制冷器6、光敏面7。
具体实施方式
一种四象限雪崩探测器组件，其创新在于：所述四象限雪崩探测器组件由管壳1、管座2、多根引脚3、安装座4、四个雪崩探测器5、制冷器6和四路放大器电路组成；
所述管壳1下端与管座2上端面焊接固定，管壳1上端设置有光窗；管座2上被管壳1覆盖的区域形成安装区；管座2上安装区的中部设置设置有安装槽，安装座4下端设置在安装槽内，安装座4与管壳1之间留有间隙；安装槽的槽底中部设置有喇叭孔，喇叭孔的上端口与安装座4底面连通，喇叭孔下端口的口径大于上端口的口径；安装座4底面上设置有制冷器安装槽，制冷器6上部插接在制冷器安装槽内，制冷器6下部与管座2连接；管座2上喇叭孔的外围设置有多个引脚孔，引脚孔位于安装区范围内，多根引脚3一一对应地设置在引脚孔内；雪崩探测器5的底部与安装座4的上端面连接，雪崩探测器5的光敏面朝上，所述光敏面与所述光窗位置对正，雪崩探测器5的光敏面为圆心角为直角的扇形，四个雪崩探测器5的光敏面拼接在一起形成圆形；雪崩探测器5的输出端与放大器电路的输入端连接，四个雪崩探测器5与四路放大器电路一一对应，四路放大器电路贴装在管座2的周向侧壁上，放大器电路的输出端通过引脚3向外引出。

Claims (1)

1.一种四象限雪崩探测器组件，其特征在于：所述四象限雪崩探测器组件由管壳（1）、管座（2）、多根引脚（3）、安装座（4）、四个雪崩探测器（5）、制冷器（6）和四路放大器电路组成；
所述管壳（1）下端与管座（2）上端面焊接固定，管壳（1）上端设置有光窗；管座（2）上被管壳（1）覆盖的区域形成安装区；管座（2）上安装区的中部设置设置有安装槽，安装座（4）下端设置在安装槽内，安装座（4）与管壳（1）之间留有间隙；安装槽的槽底中部设置有喇叭孔，喇叭孔的上端口与安装座（4）底面连通，喇叭孔下端口的口径大于上端口的口径；安装座（4）底面上设置有制冷器安装槽，制冷器（6）上部插接在制冷器安装槽内，制冷器（6）下部与管座（2）连接；管座（2）上喇叭孔的外围设置有多个引脚孔，引脚孔位于安装区范围内，多根引脚（3）一一对应地设置在引脚孔内；雪崩探测器（5）的底部与安装座（4）的上端面连接，雪崩探测器（5）的光敏面朝上，所述光敏面与所述光窗位置对正，雪崩探测器（5）的光敏面为圆心角为直角的扇形，四个雪崩探测器（5）的光敏面拼接在一起形成圆形；雪崩探测器（5）的输出端与放大器电路的输入端连接，四个雪崩探测器（5）与四路放大器电路一一对应，四路放大器电路贴装在管座（2）的周向侧壁上，放大器电路的输出端通过引脚（3）向外引出。
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Publication number Priority date Publication date Assignee Title
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