CN106548967B - Bearing device and semiconductor processing equipment - Google Patents
Bearing device and semiconductor processing equipment Download PDFInfo
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- CN106548967B CN106548967B CN201510597182.XA CN201510597182A CN106548967B CN 106548967 B CN106548967 B CN 106548967B CN 201510597182 A CN201510597182 A CN 201510597182A CN 106548967 B CN106548967 B CN 106548967B
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- 238000012545 processing Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000011810 insulating material Substances 0.000 claims description 18
- 238000009826 distribution Methods 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 230000005672 electromagnetic field Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a bearing device and semiconductor processing equipment, which comprise a chuck and a focusing ring, wherein the upper surface of the chuck is used for bearing a workpiece to be processed; the focusing ring surrounds the periphery of the chuck; and the dielectric constant values of different areas of the focusing ring in the circumferential direction are different, so that the etching rate at all positions of the edge of the processed workpiece tends to be uniform. The bearing device provided by the invention can enable the etching rate at each position of the edge of the processed workpiece to be uniform, thereby improving the process uniformity.
Description
Technical Field
The invention relates to the field of semiconductor equipment manufacturing, in particular to a bearing device and semiconductor processing equipment.
Background
In the fabrication of Integrated Circuits (ICs) and micro-electro-mechanical systems (MEMS), particularly in the plasma ETCH (ETCH), Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), etc., a carrier is often used to carry and heat a workpiece, such as a wafer, to provide a dc bias to the wafer and to control the temperature of the wafer surface.
Fig. 1 is a schematic structural diagram of a typical carrier. As shown in fig. 1, the carrier includes an electrostatic chuck 11 and an edge assembly. The electrostatic chuck 11 is used for fixing the wafer 12 on the upper surface thereof by electrostatic adsorption, and the electrostatic chuck 11 is made of a conductive metal material such as aluminum to serve as a lower electrode. The edge assembly is arranged on the outer peripheral wall of the electrostatic chuck 11 in a surrounding manner and comprises a focusing ring 13, a base ring 14 and an insulating ring 15 which are sequentially stacked from top to bottom, wherein the focusing ring 13 and the base ring 14 are all arranged around the electrostatic chuck 11; since the focus ring 13 is made of quartz or ceramic, and has a dielectric constant different from that of the electrostatic chuck 11, the electromagnetic field has a different impedance from the electrostatic chuck 11, that is, the impedance of the focus ring 13 is high, and the impedance of the electrostatic chuck 11 is low, so that the electromagnetic field preferentially selects a path having a low impedance (a path of the electrostatic chuck 11), and therefore, the focus ring 13 can function to confine most of the magnetic field therein, and a boundary capable of confining plasma therein can be formed. An insulating ring 15 is fixed on the mounting fixture 16 for supporting the electrostatic chuck 11, and the insulating ring 15 is made of an insulating material for electrically insulating the electrostatic chuck 11 from the mounting fixture 16. The base ring 14 serves to support the focus ring 13 and protect the outer peripheral wall of the electrostatic chuck 11 from plasma etching.
The bearing device inevitably has the following problems in practical application:
since the focus ring 13 is made of a single and uniform material, and the impedances at the circumferential parts are the same, the influence of the circumferential parts of the focus ring 13 on the electric field of the lower electrode is also the same, but in practical application, the etching rate at each part of the edge of the wafer is often not uniform, and the conventional focus ring 13 does not have the capability of making the etching rate at each part of the edge of the wafer uniform.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a bearing device and semiconductor processing equipment, which can enable the etching rate of the edge of a processed workpiece to be uniform, so that the process uniformity can be improved.
The invention provides a bearing device for achieving the aim, which comprises a chuck and a focusing ring, wherein the upper surface of the chuck is used for bearing a workpiece to be processed; the focusing ring surrounds the periphery of the chuck; the dielectric constant values of the focusing ring are different in different regions in the circumferential direction of the focusing ring, so that the etching rate tends to be uniform at all positions of the edge of the workpiece to be processed.
Preferably, the focusing ring comprises a base body and a plurality of adjusting blocks, wherein the adjusting blocks are arranged in the base body and distributed in different areas on the circumferential direction of the base body; the base body and the adjusting block are respectively made of insulating materials with different dielectric constant values.
Preferably, a plurality of mounting holes are formed in the lower surface of the base body, and the plurality of mounting holes are circumferentially arranged around the base body for at least one turn; each adjusting block is selectively arranged in one of the mounting holes, and the adjusting blocks are matched with the mounting holes.
Preferably, the mounting holes in the same circle are uniformly distributed along the circumferential direction of the base body.
Preferably, the plurality of adjusting blocks are made of the same insulating material; or the plurality of adjusting blocks are made of at least two insulating materials with different dielectric constant values.
Preferably, the plurality of adjusting blocks are in at least two shapes; and/or the plurality of adjusting blocks adopt at least two sizes; and/or the distribution density of the plurality of adjusting blocks in the circumferential direction of the base body is different.
Preferably, the insulating material comprises quartz, ceramic, single crystal silicon or silicon carbide.
Preferably, the focus ring includes a base body, and a plurality of recesses are formed on a lower surface of the base body, the plurality of recesses being distributed in different regions in a circumferential direction of the base body.
Preferably, the plurality of recesses take at least two shapes, and/or at least two sizes.
As another technical solution, the present invention further provides a semiconductor processing apparatus, which includes a reaction chamber and a carrying device disposed therein, wherein the carrying device is used for carrying the workpiece to be processed, and the carrying device adopts the carrying device provided by the present invention.
The invention has the following beneficial effects:
according to the bearing device provided by the invention, the dielectric constant values of different areas of the focusing ring surrounding the periphery of the chuck in the circumferential direction are different, so that the etching rate of each position of the edge of the processed workpiece tends to be uniform, in other words, the dielectric constant values of different areas in the circumferential direction of the focusing ring are set according to the difference between the etching rates of each position of the edge of the processed workpiece, so that the influence of the different areas in the circumferential direction of the focusing ring on the electric field of the lower electrode can compensate the difference of the etching rates, and the process uniformity can be improved.
According to the semiconductor processing equipment provided by the invention, by adopting the bearing device provided by the invention, the etching rate of each part of the edge of the processed workpiece tends to be uniform, so that the process uniformity can be improved.
Drawings
FIG. 1 is a schematic diagram of a typical carrier;
FIG. 2 is an equivalent circuit diagram of the carrier employed in the present embodiment as a lower electrode;
fig. 3A is a cross-sectional view of a carrying device according to a first embodiment of the present invention;
FIG. 3B is a bottom view of the focus ring of FIG. 3A;
FIG. 3C is an enlarged view of a portion of the carrier shown in FIG. 3A;
FIG. 4A is a bottom view of a focus ring used in a second embodiment of the present invention;
FIG. 4B is a bottom view of a focus ring used in a third embodiment of the present invention; and
fig. 4C is a bottom view of a focus ring used in a fourth embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the carrier and the semiconductor processing apparatus provided by the present invention are described in detail below with reference to the accompanying drawings.
The invention provides a bearing device, which comprises a chuck and a focusing ring, wherein the upper surface of the chuck is used for bearing a workpiece to be processed, and the workpiece to be processed can be a wafer or a tray capable of bearing a plurality of wafers. The focusing ring surrounds the periphery of the chuck and has different dielectric constant values in different regions in its circumferential direction so that the etching rate tends to be uniform across the edge of the workpiece being processed.
Further, fig. 2 is an equivalent circuit diagram of the carrier device used as the lower electrode in the present embodiment. Referring to fig. 2, the carrier is used as a bottom electrode to connect to the rf power source, and the equivalent capacitance of the focus ring in the rf loop is:
wherein epsilon is the dielectric constant value of the focusing ring, s is the sectional area of the focusing ring, and d is the width of the focusing ring. Because the focus ring has equivalent capacitance in the rf loop, the focus ring consumes a certain amount of rf energy in the rf loop. Moreover, as can be seen from the formula, when s and d are fixed, in order to adjust the equivalent capacitance value of the focusing ring, only the dielectric constant value epsilon of the focusing ring can be changed, and the larger the dielectric constant value epsilon is, the larger the equivalent capacitance is, so that the consumed radio frequency energy is, and the etching rate can be reduced; conversely, the smaller the dielectric constant value epsilon, the smaller the equivalent capacitance, so that the consumed radio frequency energy is smaller, and the etching rate can be further improved. And the value of the dielectric constant epsilon depends on the material from which the focus ring is made.
Based on the principle, the invention designs the focusing ring, the dielectric constant values of different areas of the focusing ring in the circumferential direction are different, so that the etching rate at each position of the edge of the processed workpiece tends to be uniform, in other words, the dielectric constant values of different areas in the circumferential direction of the focusing ring are set according to the difference between the etching rates at each position of the edge of the processed workpiece, so that the influence of the different areas in the circumferential direction of the focusing ring on the electric field of the lower electrode can compensate the difference of the etching rates, and the process uniformity can be improved.
The following describes in detail a specific embodiment of the focus ring. Specifically, fig. 3A is a cross-sectional view of a carrying device according to a first embodiment of the present invention. Fig. 3B is a bottom view of the focus ring of fig. 3A. Fig. 3C is a partially enlarged view of the carrying device in fig. 3A. Referring also to fig. 3A-3C, the carrier includes a chuck 21 and an edge assembly. Wherein the chuck 21 is used for fixing the workpiece 22 to be processed on the upper surface thereof, and the chuck 21 is also made of conductive metal material such as aluminum and the like to be used as a lower electrode; the chuck 21 may be an electrostatic chuck or a mechanical chuck. The edge assembly is arranged on the outer peripheral wall of the chuck 21 in a surrounding manner and comprises a focusing ring 23, a base ring 24 and an insulating ring 25 which are sequentially stacked from top to bottom, wherein the focusing ring 23 and the base ring 24 are all arranged around the electrostatic chuck 11 in a surrounding manner; the focusing ring 23 is made of an insulating material, and has a dielectric constant value different from that of the chuck 21 made of a conductive metal material, so that the electromagnetic field has different impedances through the two, that is, the impedance of the focusing ring 23 is high, and the impedance of the chuck 21 is low, so that the electromagnetic field preferentially selects a path (a path of the chuck 21) having a low impedance, and therefore, the focusing ring 23 can play a role of confining most of the magnetic field inside, and a boundary capable of confining plasma inside can be formed. An insulating ring 25 is fixed on the mounting fixture 26 for supporting the chuck 21, and the insulating ring 25 is made of an insulating material for electrically insulating the chuck 21 from the mounting fixture 26. Base ring 24 serves to support focus ring 23 and protect the outer peripheral wall of chuck 21 from plasma etching.
In the present embodiment, the focus ring 23 includes a base 231 and a plurality of adjustment blocks 27. Wherein, a plurality of mounting holes 232 are provided on the lower surface of the base 231, and the plurality of mounting holes 232 are surrounded by two circles along the circumferential direction of the base 231, that is, the plurality of mounting holes 232 are distributed on two circles with different radii on the lower surface of the base 231, and the mounting holes 232 in the same circle are uniformly distributed along the circumferential direction of the base 231, as shown in fig. 3B. The adjusting block 27 and the base 231 are made of insulating materials with different dielectric constant values, respectively, and the adjusting block 27 is matched with the mounting hole 232, that is, the projection shapes and the sizes of the adjusting block 27 and the mounting hole 232 on the axial section of the mounting hole 232 are consistent, as shown in fig. 3C; each of the adjusting blocks 27 is selectively disposed in one of the mounting holes 232, that is, if any one of the adjusting blocks 27 is required to be disposed at a predetermined position in the circumferential direction of the base 231, the adjusting block 27 is simply placed in the mounting hole 232 at the predetermined position.
The structure of the focusing ring 23 can be divided into the following three setting modes according to specific needs:
in the first setting mode, each adjusting block 27 is made of the same insulating material, and the number of the adjusting blocks 27 arranged in the mounting holes 232 is less than the total number of the mounting holes 232. In this case, among all the mounting holes 232, a part of the mounting holes 232 is provided with the adjustment block 27, and the remaining mounting holes 232 are hollow without the adjustment block 27. According to the difference between the etching rates of the edges of the processed workpiece, the adjusting blocks 27 are respectively placed in the mounting holes 232 at the designated positions, so that the dielectric constant value of the focusing ring 23 at each designated position is different from the dielectric constant values of the rest positions, the influence of different areas of the focusing ring 23 in the circumferential direction on the electric field of the lower electrode can compensate the difference of the etching rates, and the process uniformity can be improved. In addition, since the plurality of mounting holes 232 are distributed over the entire circumference of the base 231, the positions of the respective adjusting blocks 27 can be freely adjusted according to the specific situation, so that flexible versatility of adjustment can be achieved.
In a second arrangement, the plurality of adjusting blocks are made of at least two insulating materials with different dielectric constant values, and the number of the adjusting blocks 27 arranged in the mounting holes 232 is less than the total number of the mounting holes 232. This arrangement is similar to the first arrangement described above, but differs only in that: in the process of putting the respective adjusting blocks 27 into the mounting holes 232 at the respective designated positions, the dielectric constant values of the respective adjusting blocks 27 can also be taken into consideration, so that the versatility of adjustment can be further increased.
In a third arrangement, the plurality of adjusting blocks are made of at least two insulating materials with different dielectric constant values, and the number of the adjusting blocks 27 arranged in the mounting holes 232 is equal to the total number of the mounting holes 232, that is, the adjusting blocks 27 are arranged in each mounting hole 232. In this case, the difference between the values of the dielectric constants of the respective adjusting blocks 27 also enables the influence of different regions in the circumferential direction of the focus ring 23 on the electric field of the lower electrode to compensate for the difference in the etching rate.
In practical applications, the above-mentioned insulating materials used for the base body and the adjusting block may include quartz, ceramics, single crystal silicon, or silicon carbide.
In addition, by uniformly distributing the mounting holes 232 in the same turn along the circumferential direction of the base 231, the dielectric constant values can be made the same at various places in the circumferential direction of the base 231 when no adjusting block 27 is placed. Of course, in practical application, the mounting holes in the same circle may be unevenly distributed in the circumferential direction of the base according to different requirements.
In this embodiment, the plurality of mounting holes 232 are circumferentially arranged around the base 231 for two turns, but the present invention is not limited thereto, and in practical applications, the plurality of mounting holes may be circumferentially arranged around the base for one turn, three turns, or four or more turns. In addition, the shapes and the sizes of the mounting holes and the adjusting blocks can be freely set according to specific requirements.
The technical solution of the above embodiment is to arrange each adjusting block in an adjustable manner, but the present invention is not limited to this, and each adjusting block may be embedded in the base body in a fixed manner to meet the specified requirements. The following are several embodiments of the fixed setting of the adjustment block.
Specifically, fig. 4A is a bottom view of a focus ring employed in the second embodiment of the present invention. Referring to fig. 4A, in the present embodiment, a plurality of adjusting blocks 27 are disposed in the base 231 and distributed in different areas of the base 231 in the circumferential direction. Further, the distribution density of the plurality of adjusting blocks 27 in the circumferential direction of the base 231 is different so that the influence of different regions in the circumferential direction of the focus ring 23 on the electric field of the lower electrode can compensate for the difference in the etching rate.
Fig. 4B is a bottom view of a focus ring used in a third embodiment of the present invention. Referring to fig. 4B, in the present embodiment, the adjusting blocks 27 are disposed in the base 231 and distributed in different areas of the base 231 in the circumferential direction. Moreover, the plurality of adjusting blocks are at least two sizes so that the influence of different areas in the circumferential direction of the focus ring 23 on the electric field of the lower electrode can compensate for the difference in etching rate.
Fig. 4C is a bottom view of a focus ring used in a fourth embodiment of the present invention. Referring to fig. 4C, in the present embodiment, the adjusting blocks 27 are disposed in the base 231 and distributed in different areas of the base 231 in the circumferential direction. Furthermore, the plurality of adjusting blocks 27 are made of at least two insulating materials having different dielectric constant values, so that the influence of different regions in the circumferential direction of the focus ring 23 on the electric field of the lower electrode can compensate for the difference in etching rate.
In addition, the plurality of adjusting blocks can also adopt at least two shapes, so that the influence of different areas on the electric field of the lower electrode in the circumferential direction of the focusing ring 23 can compensate the difference of the etching rate.
As shown in fig. 4A to 4C, assuming that the etching rates at the respective positions of the edge of the workpiece to be processed are different between the I region and the II region and the other regions, at least two shapes can be adopted by the plurality of regulating blocks 27; and/or, at least two sizes are used; and/or the distribution density in the circumferential direction of the base body is different; and/or, at least two insulating materials with different dielectric constant values are adopted for manufacturing, and the dielectric constant values of the focusing ring 23 in the I area and the II area are respectively increased or reduced, so that the influence of the focusing ring 23 on the electric field of the lower electrode can compensate the difference of the etching rates.
In the first to fourth embodiments, the dielectric constant values of different regions in the circumferential direction of the focus ring 23 are made different by providing the plurality of adjusting blocks 27 on the base 231, but the present invention is not limited to this, and in practical applications, the dielectric constant values of different regions in the circumferential direction of the focus ring may be made different by forming a plurality of recesses only in different regions distributed on the lower surface of the base in the circumferential direction thereof, without providing the adjusting blocks, so that the influence of the focus ring on the lower electrode electric field can compensate for the difference in the etching rate. It is easily understood that the dielectric constant value of the base body itself is different from that of the recess portion (vacuum).
In practical applications, the dielectric constant values of different regions in the circumferential direction of the focus ring may be made different by making the plurality of recesses take at least two shapes, and/or at least two sizes.
In addition, the dielectric constant values of the respective regions of the focus ring can be obtained experimentally, specifically: firstly, detecting the etching rate of each position of the edge of a wafer obtained by processing a focusing ring made of a single and uniform material, trying to arrange an adjusting block or a concave part in a corresponding area on the circumferential direction of the focusing ring according to the distribution condition of the etching rate of each position of the edge of the wafer, then carrying out the process by using the focusing ring, and judging whether a new focusing ring can compensate the difference of the previous etching rate. The above experiment was repeated until the most suitable distribution of dielectric constant values was obtained on the focusing ring.
In summary, in the carrying device provided by the present invention, the dielectric constant values of the focusing ring surrounding the chuck at different regions in the circumferential direction are different, so that the etching rate at each position of the edge of the workpiece to be processed tends to be uniform, in other words, the dielectric constant values of the different regions in the circumferential direction of the focusing ring are set according to the difference between the etching rates at each position of the edge of the workpiece to be processed, so that the influence of the different regions in the circumferential direction of the focusing ring on the electric field of the lower electrode can compensate the difference in the etching rate, thereby improving the process uniformity.
As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, which includes a reaction chamber and a carrying device disposed therein, where the carrying device is used for carrying a workpiece to be processed, and the carrying device provided in each of the above embodiments of the present invention is used.
According to the semiconductor processing equipment provided by the embodiment of the invention, by adopting the bearing device provided by each embodiment of the invention, the etching rate at each position of the edge of the processed workpiece tends to be uniform, so that the process uniformity can be improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (8)
1. The bearing device comprises a chuck and a focusing ring, wherein the upper surface of the chuck is used for bearing a workpiece to be processed; the focusing ring surrounds the periphery of the chuck; the method is characterized in that dielectric constant values of different areas of the focusing ring in the circumferential direction are different, so that the etching rate of the edge of the processed workpiece tends to be uniform;
the focusing ring comprises a base body and a plurality of adjusting blocks, wherein the adjusting blocks are arranged in the base body and distributed in different areas on the circumferential direction of the base body; the base body and the adjusting block are respectively made of insulating materials with different dielectric constant values; or,
the focus ring includes a base body, and a plurality of recesses are formed on a lower surface of the base body, the plurality of recesses being distributed in different regions in a circumferential direction of the base body.
2. The carrying device as claimed in claim 1, wherein a plurality of mounting holes are provided on the lower surface of the base body, the plurality of mounting holes encircling at least one turn in the circumferential direction of the base body;
each adjusting block is selectively arranged in one of the mounting holes, and the adjusting blocks are matched with the mounting holes.
3. The carrier as claimed in claim 2 wherein the mounting holes in the same ring are evenly distributed around the circumference of the base.
4. The carrier device according to claim 1, wherein the plurality of adjustment blocks are made of the same insulating material; or,
the adjusting blocks are made of at least two insulating materials with different dielectric constant values.
5. The carrier in accordance with claim 1 wherein the plurality of adjustment blocks take at least two shapes; and/or the presence of a gas in the gas,
the plurality of adjusting blocks are at least two sizes; and/or the presence of a gas in the gas,
the distribution density of the plurality of adjusting blocks in the circumferential direction of the base body is different.
6. The carrier in accordance with claim 1 wherein the insulating material comprises quartz, ceramic, single crystal silicon, or silicon carbide.
7. The carrier according to claim 1 wherein the plurality of recesses are at least two shapes and/or at least two sizes.
8. A semiconductor processing apparatus comprising a reaction chamber and a carrier device provided therein for carrying the workpiece to be processed, wherein the carrier device is the carrier device of any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510597182.XA CN106548967B (en) | 2015-09-18 | 2015-09-18 | Bearing device and semiconductor processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510597182.XA CN106548967B (en) | 2015-09-18 | 2015-09-18 | Bearing device and semiconductor processing equipment |
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| Publication Number | Publication Date |
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| CN106548967A CN106548967A (en) | 2017-03-29 |
| CN106548967B true CN106548967B (en) | 2020-04-28 |
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| CN109119373A (en) * | 2017-06-23 | 2019-01-01 | 北京北方华创微电子装备有限公司 | pressure ring assembly and reaction chamber |
| CN110890305B (en) * | 2018-09-10 | 2022-06-14 | 北京华卓精科科技股份有限公司 | Electrostatic chuck |
| JP7278160B2 (en) * | 2019-07-01 | 2023-05-19 | 東京エレクトロン株式会社 | Etching method and plasma processing apparatus |
| US20210249232A1 (en) * | 2020-02-10 | 2021-08-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for etching |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006173223A (en) * | 2004-12-14 | 2006-06-29 | Toshiba Corp | Plasma etching device and plasma etching method using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20060151116A1 (en) * | 2005-01-12 | 2006-07-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Focus rings, apparatus in chamber, contact hole and method of forming contact hole |
| JP2010278166A (en) * | 2009-05-27 | 2010-12-09 | Tokyo Electron Ltd | Annular component for plasma treatment, and plasma treatment device |
| JP5654297B2 (en) * | 2010-09-14 | 2015-01-14 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| TWM464809U (en) * | 2012-10-20 | 2013-11-01 | Applied Materials Inc | Focus ring segment and assembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2006173223A (en) * | 2004-12-14 | 2006-06-29 | Toshiba Corp | Plasma etching device and plasma etching method using the same |
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