CN106548961B - The method for carrying out rapid thermal anneal process using heat annealing equipment - Google Patents
The method for carrying out rapid thermal anneal process using heat annealing equipment Download PDFInfo
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- CN106548961B CN106548961B CN201610880566.7A CN201610880566A CN106548961B CN 106548961 B CN106548961 B CN 106548961B CN 201610880566 A CN201610880566 A CN 201610880566A CN 106548961 B CN106548961 B CN 106548961B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Abstract
The present invention provides a kind of method for carrying out rapid thermal anneal process using heat annealing equipment, to heat annealing equipment respectively according to first under idle and working condition, second parameter is set, and at least preceding 1 heating chamber in several heating chambers of heat annealing equipment is set as difference setting heating chamber, to the set temperature of difference setting heating chamber lower than the set temperature for setting heating chamber in second parameter to the difference in first parameter, so that heat annealing equipment from idle state to working condition when converting, the difference of temperature between the substrate being put into when reducing the working condition initial stage substrate being first placed into heat annealing equipment and stable working state, and then reduce the generation of TTP variation, reduce the risk of scrap of the product, promote product yield, increase product economy value.
Description
Technical field
The present invention relates to the production fields of display panel more particularly to a kind of use heat annealing equipment to carry out rapid thermal annealing
The method of technique.
Background technique
Thin film transistor (TFT) (Thin Film Transistor, TFT) is current liquid crystal display device (Liquid Crystal
Display, LCD) and organic electroluminescence display device and method of manufacturing same (Organic Light-Emitting Diode, OLED) in it is main
Driving element is directly related to the developing direction of high performance flat display device.Thin film transistor (TFT) has various structures, prepares phase
The material of the thin film transistor active layer of structure is answered also to have a variety of, wherein low temperature polycrystalline silicon (Low Temperature
Poly-silicon, LTPS) material is wherein more preferred a kind of.Rapid thermal annealing in existing conventional LTPS technology
(rapid thermal anneal, RTA) processing procedure is usually used in reducing hydrogeneous (H) amount in front layer, and general temperature is higher, glass base
Plate heating rate is very fast, and glass substrate one enters processing procedure and rises to highest process temperatures, and temperature is gradually reduced again later, through cooling
Go out processing procedure afterwards.
In addition, display panel is in process of production there are also many high temperature process, temperature setting is most in these high temperature process
High is RTA processing procedure, and high temperature process directly affects the shrinkage of glass substrate, during temperature decline, temperature
Degree setting, which generates glass substrate, shrinks and deformation is affected, and the contraction quality of glass substrate for substrate to organizing
There is important influence, otherwise light leakage can be generated and cause the bad of product, therefore the shrinkage of glass substrate answers strict control.
In existing RTA processing procedure, heat annealing equipment is continuous quick heater, generally has 3~7 heating chambers
(TCM) have with a rapid cooling chamber (RCM), each intracavitary temperature in idle state (idle) and working condition (run)
Certain difference.As shown in Figure 1, when heat annealing equipment is in idle condition, the influence of not cold glass substrate, heating chamber
Interior temperature can be relatively high, generally than stable working state when high 20~30 DEG C of temperature or so, when it is from idle state to work
When making state conversion, glass substrate starts continuously to be put into heat annealing equipment, and the temperature in heating chamber can be due to glass substrate
Influence and slowly decrease up to stabilization, but temperature stabilization need the regular hour, temperature stablize before, at the beginning of working condition
The temperature for this few sheet glass substrate that phase is first placed into heat annealing equipment can be higher, puts when to causing with stable working state
Shrinkage between the glass substrate entered has certain difference, this may will lead to this several be first placed into heat annealing equipment
Product TTP (Total Pitch, system refer to the distance between each endpoint for the pixel printed on substrate) super rule of glass substrate, into
And cause scrap of the product.
Summary of the invention
The purpose of the present invention is to provide a kind of methods for carrying out rapid thermal anneal process using heat annealing equipment, by certainly
Set temperature of the dynamic adjustment heat annealing equipment under idle and working condition, reduction working condition initial stage are first placed into thermal annealing and set
The difference of temperature is reduced and is produced to reduce the generation of TTP variation between the substrate being put into when substrate and stable working state in standby
The risk that product are scrapped.
To achieve the above object, the present invention provides a kind of sides that rapid thermal anneal process is carried out using heat annealing equipment
Method, the heat annealing equipment include the several heating chambers being set in sequence from the front to the back and a rapid cooling chamber, the thermal annealing
Equipment has idle state and working condition, this method comprises:
When the heat annealing equipment is converted from idle state to working condition, by the setting parameter to heat annealing equipment by the
The step of one parameter switching to the second parameter；
When the heat annealing equipment is converted from working condition to idle state, by the setting parameter to heat annealing equipment by the
The step of two parameter switchings to the first parameter；
First, second parameter respectively includes the set temperature to several heating chambers and a rapid cooling chamber；
According to tandem, at least preceding 1 heating chamber is difference setting heating chamber from the 1st in several heating chambers, is remained
Remaining heating chamber is same settings heating chamber；
The set temperature of difference setting heating chamber is lower than in second parameter in first parameter, the difference is set
Determine the set temperature of heating chamber.
To the set temperature of difference setting heating chamber than being set in second parameter to the difference in first parameter
The set temperature of heating chamber is 10-30 DEG C low.
In first parameter in the set temperature of same settings heating chamber and second parameter to the same settings
The set temperature of heating chamber is identical.
The heat annealing equipment includes 3-7 heating chamber, wherein according to tandem from the 1st preceding 2 or 3 heating chambers
Heating chamber is set for difference, remaining heating chamber is same settings heating chamber.
The heat annealing equipment includes 6 heating chambers, wherein according to tandem, preceding 3 heating chambers are difference from the 1st
Heating chamber is set, rear 3 heating chambers are same settings heating chamber.
In second parameter, in 6 heating chambers according to the set temperature of the 1-2 heating chamber of tandem at 500 DEG C extremely
Between 600 DEG C, between 400 DEG C to 500 DEG C, the set temperature of the 5-6 heating chamber exists the set temperature of the 3-4 heating chamber
Between 200 DEG C to 400 DEG C.
The heat annealing equipment is used to carry out substrate rapid thermal anneal process, and the substrate is corresponding in heat annealing equipment
Each heating chamber is identical with the processing time of chamber is quickly cooled down, and the processing time includes that the substrate enters corresponding heating chamber
Or be quickly cooled down chamber traveling time and corresponding heating chamber or be quickly cooled down chamber in residence time.
The substrate each heating chamber is corresponded in heat annealing equipment and be quickly cooled down the processing time of chamber be 80s with
On.
It is connected with first gas in the heating chamber of the heat annealing equipment, so that the temperature in the heating chamber is uniform, institute
State heat annealing equipment rapid cooling it is intracavitary be connected with second gas, with to the substrate carry out auxiliary temperature-reducing.
The first gas is nitrogen, and the second gas is the compressed air of clean dried.
Beneficial effects of the present invention: the present invention provides a kind of side that rapid thermal anneal process is carried out using heat annealing equipment
Method sets heat annealing equipment according to the first, second parameter respectively under idle and working condition, and by heat annealing equipment
Several heating chambers at least preceding 1 heating chamber be set as difference setting heating chamber, in first parameter to difference setting plus
The set temperature of hot chamber is lower than the set temperature for setting heating chamber in second parameter to the difference, so that thermal annealing is set
Substrate and work in heat annealing equipment are first placed into for working condition initial stage when converting from idle state to working condition, is reduced
The difference of temperature between the substrate being put into when making in stable condition, and then the generation of TTP variation is reduced, the risk of scrap of the product is reduced,
Product yield is promoted, product economy value is increased.
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
Detailed description of the invention
With reference to the accompanying drawing, by the way that detailed description of specific embodiments of the present invention, technical solution of the present invention will be made
And other beneficial effects are apparent.
In attached drawing,
One heating chamber sets when Fig. 1 converts for heat annealing equipment in existing RTA processing procedure from idle state to working condition
Determine the variation tendency schematic diagram of temperature and actual temperature；
Fig. 2 is heat annealing equipment in the method for the invention using heat annealing equipment progress rapid thermal anneal process by the free time
The variation tendency schematic diagram of the set temperature of one difference setting heating chamber and actual temperature when state is converted to working condition.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.
Present invention firstly provides a kind of method for carrying out rapid thermal anneal process using heat annealing equipment, the thermal annealing is set
It is ready for use on and rapid thermal anneal process is carried out to substrate, the heat annealing equipment includes the several heating chambers being set in sequence from the front to the back
With a rapid cooling chamber, the heat annealing equipment has idle state and working condition, the idle shape of the heat annealing equipment
State refers to heat annealing equipment in open state and thereon without the substrate to rapid thermal annealing, the work shape of the heat annealing equipment
State refers to that heat annealing equipment needs the substrate of rapid thermal annealing in open state and thereon, when the heat annealing equipment is by the free time
When state is converted to working condition, the substrate to rapid thermal annealing is by being placed on heat annealing equipment successively；So, this uses heat
Annealing device carry out rapid thermal anneal process method include:
When the heat annealing equipment is converted from idle state to working condition, by the setting parameter to heat annealing equipment by the
The step of one parameter switching to the second parameter；
When the heat annealing equipment is converted from working condition to idle state, by the setting parameter to heat annealing equipment by the
The step of two parameter switchings to the first parameter；
That is, being set in idle state according to the first parameter to the heat annealing equipment, to the heat annealing equipment
It is set in working condition according to the second parameter；
First, second parameter respectively includes the set temperature to several heating chambers and a rapid cooling chamber；By institute
State in several heating chambers that at least preceding 1 heating chamber is set as difference setting heating chamber, remaining heating from the 1st according to tandem
Chamber is set as same settings heating chamber；Wherein, in first parameter to the set temperature of difference setting heating chamber lower than described the
To the set temperature of difference setting heating chamber in two parameters.
To, as shown in Fig. 2, by software setting two groups of parameters, by the heat annealing equipment in idle state according to
First parameter is set, and the heat annealing equipment is set in working condition according to the second parameter；So, when described
When heat annealing equipment is converted from idle state to working condition, specially when the heat annealing equipment is prepared to enter into working condition,
Mechanical arm starts to take when the substrate of rapid thermal annealing, by the setting parameter to heat annealing equipment by the first parameter switching to second
Parameter；At this point, due to being higher than the set temperature in the first parameter to the set temperature of difference setting heating chamber in the second parameter, that
Even if the heat annealing equipment has cold substrate to enter at working condition initial stage, make heating chamber temperature since set temperature is got higher
It spends raised influence to offset with the influence that cold substrate enters and heating chamber temperature is enable to reduce, to may make the difference
Actual temperature in setting heating chamber substantially can continue to keep its actual temperature in idle state, until the heat is moved back
Fiery equipment is in stable working state.So that heat annealing equipment reduces institute when converting from idle state to working condition
The base being put into when stating the substrate and stable working state that heat annealing equipment was first placed into heat annealing equipment at working condition initial stage
The difference of temperature between plate, and then the generation of TTP variation is reduced, the risk of scrap of the product is reduced, product yield is promoted, increases product
Economic value.
Specifically, the set temperature of heating chamber is set than the area the second parameter Zhong Duigai to difference in first parameter
Not She Ding heating chamber set temperature it is 10-30 DEG C low.
Specifically, in first parameter to the set temperature of same settings heating chamber in second parameter to the phase
It is identical with the setting set temperature of heating chamber.
Specifically, the heat annealing equipment includes 3-7 heating chamber, wherein according to tandem first 2 or 3 from the 1st
Heating chamber is difference setting heating chamber, and remaining heating chamber is same settings heating chamber.
Specifically, in this embodiment, the heat annealing equipment include 6 heating chambers, wherein according to tandem from
It is difference setting heating chamber that 1st, which is played preceding 3 heating chambers, and rear 3 heating chambers are same settings heating chamber, in addition, preceding 2 heating
Chamber is preheating section, and temperature setting is higher, and intermediate 2 heating chambers are processing procedure section, and temperature is more stable, and rear 2 heating chambers are
Temperature descending section, temperature setting are more lower.
So, specifically, the heat annealing equipment is in working condition, i.e., in described second parameter, in 6 heating chambers according to
Between 500 DEG C to 600 DEG C, the set temperature of the 3-4 heating chamber exists the set temperature of the 1-2 heating chamber of tandem
Between 400 DEG C to 500 DEG C, the set temperature of the 5-6 heating chamber is between 200 DEG C to 400 DEG C.
Specifically, since heat annealing equipment is continuous, therefore the substrate corresponds to each heating in heat annealing equipment
Chamber be quickly cooled down the processing time of chamber it is identical, wherein the processing time include the substrate enter corresponding heating chamber or
It is quickly cooled down the traveling time of chamber and in corresponding heating chamber or the residence time being quickly cooled down in chamber.
Specifically, it is identical with the processing time of chamber is quickly cooled down to correspond to each heating chamber in heat annealing equipment for the substrate
Generally cannot be too short, not so since substrate is inadequate cooling time, when being come out from heat annealing equipment temperature it is excessively high and to member thereon
Part (parts) causes to damage, and therefore, the substrate corresponds to each heating chamber and the processing procedure for being quickly cooled down chamber in heat annealing equipment
Time is 80s or more.
Specifically, it is connected with first gas in the heating chamber of the heat annealing equipment, so that the temperature in the heating chamber
Uniformly, the rapid cooling of the heat annealing equipment is intracavitary is connected with second gas, to carry out auxiliary temperature-reducing to the substrate.
Specifically, the first gas is nitrogen (N2), the second gas is the compressed air (Clean of clean dried
Dry Air, CDA).
In conclusion the present invention provides a kind of method for carrying out rapid thermal anneal process using heat annealing equipment, heat is moved back
Fiery equipment is set according to the first, second parameter respectively under idle and working condition, and the several of heat annealing equipment are added
At least preceding 1 heating chamber in hot chamber is set as difference setting heating chamber, sets in first parameter to difference setting heating chamber
Temperature is determined lower than the set temperature for setting heating chamber in second parameter to the difference, so that heat annealing equipment is by sky
When not busy state is converted to working condition, reduce that working condition initial stage is first placed into substrate in heat annealing equipment and working condition is steady
The difference of temperature between the substrate that timing is put into, and then the generation of TTP variation is reduced, the risk of scrap of the product is reduced, product is promoted
Yield increases product economy value.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the claims in the present invention
Protection scope.
Claims (10)
1. it is a kind of using heat annealing equipment carry out rapid thermal anneal process method, the heat annealing equipment include from the front to the back according to
The several heating chambers and a rapid cooling chamber of sequence setting, the heat annealing equipment has idle state and working condition, special
Sign is, this method comprises:
When the heat annealing equipment is converted from idle state to working condition, by the setting parameter to heat annealing equipment by the first ginseng
The step of number switches to the second parameter；
When the heat annealing equipment is converted from working condition to idle state, by the setting parameter to heat annealing equipment by the second ginseng
The step of number switches to the first parameter；
First, second parameter respectively includes the set temperature to several heating chambers and a rapid cooling chamber；
According to tandem, at least preceding 1 heating chamber is difference setting heating chamber from the 1st in several heating chambers, remaining
Heating chamber is same settings heating chamber；
The set temperature of difference setting heating chamber adds difference setting lower than in second parameter in first parameter
The set temperature of hot chamber；
When the heat annealing equipment is prepared to enter into working condition, mechanical arm starts to take when the substrate of rapid thermal annealing, will be to heat
The setting parameter of annealing device is by the first parameter switching to the second parameter.
2. the method for carrying out rapid thermal anneal process using heat annealing equipment as described in claim 1, which is characterized in that described
To the set temperature of difference setting heating chamber than the setting in second parameter to difference setting heating chamber in first parameter
Temperature is 10-30 DEG C low.
3. the method for carrying out rapid thermal anneal process using heat annealing equipment as described in claim 1, which is characterized in that described
To the setting in the set temperature of same settings heating chamber and second parameter to the same settings heating chamber in first parameter
Temperature is identical.
4. the method for carrying out rapid thermal anneal process using heat annealing equipment as described in claim 1, which is characterized in that described
Heat annealing equipment includes 3-7 heating chamber, wherein according to tandem, preceding 2 or 3 heating chambers are that difference setting adds from the 1st
Hot chamber, remaining heating chamber are same settings heating chamber.
5. the method for carrying out rapid thermal anneal process using heat annealing equipment as claimed in claim 4, which is characterized in that described
Heat annealing equipment includes 6 heating chambers, wherein and according to tandem, preceding 3 heating chambers are difference setting heating chamber from the 1st,
3 heating chambers are same settings heating chamber afterwards.
6. the method for carrying out rapid thermal anneal process using heat annealing equipment as claimed in claim 5, which is characterized in that described
In second parameter, the set temperature in 6 heating chambers according to the 1-2 heating chamber of tandem is between 500 DEG C to 600 DEG C, and
The set temperature of 3-4 heating chamber is between 400 DEG C to 500 DEG C, and the set temperature of the 5-6 heating chamber is at 200 DEG C to 400 DEG C
Between.
7. the method for carrying out rapid thermal anneal process using heat annealing equipment as described in claim 1, which is characterized in that described
Heat annealing equipment be used for substrate carry out rapid thermal anneal process, the substrate correspond in heat annealing equipment each heating chamber with
The processing time for being quickly cooled down chamber is identical, and the processing time includes that the substrate enters corresponding heating chamber or is quickly cooled down chamber
Traveling time and corresponding heating chamber or be quickly cooled down chamber in residence time.
8. the method for carrying out rapid thermal anneal process using heat annealing equipment as claimed in claim 7, which is characterized in that described
It is 80s or more that substrate, which corresponds to each heating chamber in heat annealing equipment and is quickly cooled down the processing time of chamber,.
9. the method for carrying out rapid thermal anneal process using heat annealing equipment as claimed in claim 7, which is characterized in that described
It is connected with first gas in the heating chamber of heat annealing equipment, so that the temperature in the heating chamber is uniform, the heat annealing equipment
Rapid cooling it is intracavitary be connected with second gas, with to the substrate carry out auxiliary temperature-reducing.
10. the method for carrying out rapid thermal anneal process using heat annealing equipment as claimed in claim 9, which is characterized in that institute
Stating first gas is nitrogen, and the second gas is the compressed air of clean dried.
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| CN107481936A (en) * | 2017-08-07 | 2017-12-15 | 武汉华星光电技术有限公司 | Low-temperature polysilicon film transistor and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390553A (en) * | 2012-05-11 | 2013-11-13 | 无锡华润上华科技有限公司 | Rapid thermal annealing method |
| CN204243004U (en) * | 2014-12-02 | 2015-04-01 | 上海和辉光电有限公司 | Heat annealing equipment |
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| US9263265B2 (en) * | 2013-08-30 | 2016-02-16 | Applied Materials, Inc. | Crystallization of amorphous films and grain growth using combination of laser and rapid thermal annealing |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390553A (en) * | 2012-05-11 | 2013-11-13 | 无锡华润上华科技有限公司 | Rapid thermal annealing method |
| CN204243004U (en) * | 2014-12-02 | 2015-04-01 | 上海和辉光电有限公司 | Heat annealing equipment |
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