CN102560025B - Rapid thermal annealing method - Google Patents
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- CN102560025B CN102560025B CN201010605225.1A CN201010605225A CN102560025B CN 102560025 B CN102560025 B CN 102560025B CN 201010605225 A CN201010605225 A CN 201010605225A CN 102560025 B CN102560025 B CN 102560025B
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Abstract
The invention provides a rapid thermal annealing method, which at least comprises a fast heating-up step, sequentially followed by four slow heating-up steps, wherein the heating-up speed is 45 DEG C/sec in the fast heating-up step, and the heating-up speeds sequentially and gradually decrease in the four slow heating-up steps. Compared with the two-step heating-up step in the prior art, the rapid thermal annealing menu structure is optimized, the appropriate step number of heating-up steps is added, and the overall heating-up process is divided, so that the heating-up speed is gradually reduced, the temperature overheating phenomenon does not easily occur, and the calculation and the comparison of the thermal budget of the whole process are facilitated.
Description
[technical field]
The present invention relates to the quick annealing method in manufacture of semiconductor field, particularly relate to quick thermal annealing method during a kind of heater element temperature overheating.
[background technology]
Along with the development of manufacture of semiconductor, the application of rapid thermal annealing is more and more general, and device performance not only proposes more and more higher requirement to the control of annealing temperature accuracy and uniformity, and it is also proposed strict requirement to heat budget in annealing process.Particularly since the generally application of metal silicide, the control of phase in version more proposes harsh requirement to heat budget.All these requires in equipment coupling and device extension, the coupling of special requirement bulk temperature curve.
Although current rapid thermal annealing menu majority have employed the pattern that multistep controls, control balanced to the temperature reached in intensification and temperature-fall period, but now in all kinds of short annealing equipment, due to the various reasons such as equipment performance difference, equipment unit be aging, the phenomenon of temperature overheating still generally can be there is.Such as, the short annealing menu of common employing 7 step control model, which includes two heating steps, i.e. the 4th step and the 5th step, described 4th step and the 5th step all require higher heating rate (be respectively 50 DEG C per second and 25 DEG C per second), and the 6th step is for requiring to enter temperature plateau step (i.e. annealing steps), from the time of each step of menu, the cut-off temperature of the 4th step setting is 700 DEG C and is about 5 seconds stabilization time, the cut-off temperature of the 5th step setting is 750 DEG C and is about 2 seconds stabilization time, if the stabilization time of the 4th and the 5th step is longer than 5 seconds and 2 seconds, the high power that then the 4th or the 5th step applies still can continue in the 5th or the 6th step, like this then cause temperature overheating phenomenon, in annealing menu, each step parameter arranges and can join following table:
| Display parameters (unit) | Step 1 | Step 2 | Step 3 | Step 4 | Step 5 | Step 6 | Step 7 |
| Step title | Initial | TINIT | SOR | Be rapidly heated | Slow intensification | Temperature plateau | Temperature drops back |
| The longest stabilization time (second) | 30 | 0 | 20 | 20 | 20 | 20 | 30 |
| Cut-off temperature (DEG C) | 420 | 470 | 700 | 750 | 750 | 500 | |
| Rate of rise in temperature (DEG C/sec) | 15 | 50 | 25 | 50 |
Generally speaking, so-called temperature overheating is because the excessive feedback caused of power added on heater element hesitates (this phenomenon is very common in the heat annealing equipment comparatively fallen behind or aging annealing device), the power that back applies and the power difference that a rear step applies may be very large, and often in short annealing menu setting, such menu setting is very common, such as, some menu requires to obtain some special device performance with Elevated Temperature Conditions very fast, thisly to heat up very fast, just need on heater element, apply very large power, like this, if the rear step followed closely is very low or required to enter temperature plateau step to the requirement of programming rate, just easily cause great temperature overheating phenomenon, quite a larger defect for the heat budget coupling required by the manufacture of semiconductor day by day become more meticulous like this, also be difficult to calculate and more all kinds of heat budget.
In view of the above problems, be necessary to provide a kind of method of temperature overheating when can improve short annealing.
[summary of the invention]
Technical problem solved by the invention is to provide a kind of quick thermal annealing method, its can effectively improve temperature overheating phenomenon and carry out better temperature curve coupling and heat budget compare.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: a kind of quick thermal annealing method, the method at least comprises be rapidly heated step and four slow heating steps carrying out successively after the described step that is rapidly heated, the programming rate of the described step that is rapidly heated is 45 DEG C/sec, and the programming rate of described four slow heating steps reduces successively gradually.
Further, described in the be rapidly heated cut-off temperature of step be 550 DEG C, stabilization time is 20 seconds.
Further, in the first step in described four slow heating steps, its stabilization time is 60 seconds, and its programming rate is 35 DEG C/sec.
Further, in the second step in described four slow heating steps, its cut-off temperature is 700 DEG C, and stabilization time is 60 seconds, and its programming rate is 20 DEG C/sec.
Further, in the 3rd step in described four slow heating steps, its cut-off temperature is 720 DEG C, and stabilization time is 60 seconds, and its programming rate is 5 DEG C/sec.
Further, in the 4th step in described four slow heating steps, its cut-off temperature rises to 750 DEG C, and stabilization time is 60 seconds, and its programming rate is 5 DEG C/sec.
Further, after described four slow heating steps complete, be also provided with an annealing steps, the cut-off temperature of this annealing steps is 750 DEG C, and stabilization time is 12 seconds.
Compared to prior art, the invention has the beneficial effects as follows: improve the temperature overheating phenomenon in short annealing process, facilitate the calculating of heat budget and compare.
[embodiment]
The invention provides a kind of quick thermal annealing method, it is mainly by being optimized setting to the menu structure of short annealing, to improve the operating procedure of short annealing, thus obtains the better temperature curve of matching degree (the most close with heat budget).
The menu of described short annealing have employed the pattern of multistep control, 10 steps are set altogether and (or are greater than 7 steps, depending on menu optimization), wherein contain 5 heating steps, these 5 heating steps comprise 1 step that is rapidly heated (i.e. step 4) and 4 slow heating steps (namely step 5 is to step 8), the cut-off temperature of the described step 4 that is rapidly heated foreshortens to 550 DEG C (having shortened to 550 DEG C from 700 DEG C of the prior art), and the also corresponding shortening stabilization time of step 4, programming rate is 45 DEG C/sec; Described step 5 is the slow first step heated up, and its cut-off temperature is 650 DEG C, and compare step 4 and improve 100 DEG C, and the stabilization time of step 5 is 60 seconds, its programming rate is 35 DEG C/sec; Described step 6 is the slow second step heated up, and its cut-off temperature has risen to 700 DEG C, and stabilization time is 60 seconds, and its programming rate is 20 DEG C/sec; Described step 7 is slow the 3rd step heated up, and its cut-off temperature rises to 720 DEG C, and stabilization time is 60 seconds, and its programming rate is 5 DEG C/sec; Described step 8 is slow the 4th step heated up, and its cut-off temperature rises to 750 DEG C, and stabilization time is 60 seconds, and its programming rate is 5 DEG C/sec.After described slow heating step (namely step 5 is to step 8), enter temperature plateau step 9 (i.e. annealing steps), the temperature of step 9 maintains 750 DEG C, and stabilization time is 12 seconds.The present invention's each step parameter in menu of annealing arranges and can join following table:
| Display parameters (unit) | Step 1 | Step 2 | Step 3 | Step 4 | Step 5 | Step 6 | Step 7 | Step 8 | Step 9 | Step 10 |
| Step title | Initial | TINIT | SOR | Be rapidly heated | Slow intensification 1 | Slow intensification 2 | Slow intensification 3 | Slow intensification 4 | Temperature plateau | Temperature drops back |
| The longest stabilization time (second) | 30 | 0 | 30 | 20 | 60 | 60 | 60 | 60 | 2 | 30 |
| Cut-off temperature (DEG C) | 420 | 470 | 550 | 650 | 700 | 720 | 750 | 750 | 500 | |
| Rate of rise in temperature (DEG C/sec) | 15 | 45 | 35 | 20 | 5 | 5 | 50 |
Compared to two step heating steps of prior art, the change of rapid thermal annealing menu structure is optimized by the present invention, add the heating step of suitable step number, overall temperature-rise period is carried out cut (namely cut becomes step 5 to four heating steps of step 8), progressively reduce programming rate, not easily produce temperature overheating phenomenon, simultaneously, also the power for annealing device adjustment heater element is facilitated to obtain the time, progressively programming rate will be reduced owing to doing like this, the overall heating-up time is easily caused to extend, so the time (having shortened to 12 seconds from 20 seconds of the prior art) shortening annealing steps (i.e. step 9) that the present invention is also suitable, make overall annealing heat budget closest, overall annealing time is also suitable, the reduction of production efficiency can not be caused.
The above is only most preferred embodiment of the present invention, not does any pro forma restriction to the present invention.Any those of ordinary skill in the art, are not departing under technical solution of the present invention ambit, utilize the method content of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, all belong to the scope of claims protection.
Claims (6)
1. a quick thermal annealing method, it is characterized in that: the method at least comprises be rapidly heated step and four slow heating steps carrying out successively after the described step that is rapidly heated, the programming rate of the described step that is rapidly heated is 45 DEG C/sec, the programming rate of described four slow heating steps reduces successively gradually, the cut-off temperature of the described step that is rapidly heated is 550 DEG C, and stabilization time is 20 seconds.
2. quick thermal annealing method as claimed in claim 1, is characterized in that: in the first step in described four slow heating steps, its stabilization time is 60 seconds, and its programming rate is 35 DEG C/sec.
3. quick thermal annealing method as claimed in claim 2, is characterized in that: in the second step in described four slow heating steps, and its cut-off temperature is 700 DEG C, and stabilization time is 60 seconds, and its programming rate is 20 DEG C/sec.
4. quick thermal annealing method as claimed in claim 3, is characterized in that: in the 3rd step in described four slow heating steps, and its cut-off temperature is 720 DEG C, and stabilization time is 60 seconds, and its programming rate is 5 DEG C/sec.
5. quick thermal annealing method as claimed in claim 4, is characterized in that: in the 4th step in described four slow heating steps, and its cut-off temperature rises to 750 DEG C, and stabilization time is 60 seconds, and its programming rate is 5 DEG C/sec.
6. the quick thermal annealing method as described in any one in claim 1 to 5, it is characterized in that: after described four slow heating steps complete, be also provided with an annealing steps, the cut-off temperature of this annealing steps is 750 DEG C, and stabilization time is 12 seconds.
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| CN102560025B true CN102560025B (en) | 2015-06-24 |
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| CN115663036A (en) * | 2022-11-15 | 2023-01-31 | 江苏杰太光电技术有限公司 | Ultra-thin tunneling passivation structure of N-type TOPCon battery and rapid annealing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4900584A (en) * | 1987-01-12 | 1990-02-13 | Planar Systems, Inc. | Rapid thermal annealing of TFEL panels |
| CN1548591A (en) * | 2003-05-12 | 2004-11-24 | 旺宏电子股份有限公司 | Quick annealing method |
| CN1635615A (en) * | 2003-12-30 | 2005-07-06 | 中芯国际集成电路制造(上海)有限公司 | Method and apparatus for quickly cooling and annealing of wafer |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4900584A (en) * | 1987-01-12 | 1990-02-13 | Planar Systems, Inc. | Rapid thermal annealing of TFEL panels |
| CN1548591A (en) * | 2003-05-12 | 2004-11-24 | 旺宏电子股份有限公司 | Quick annealing method |
| CN1635615A (en) * | 2003-12-30 | 2005-07-06 | 中芯国际集成电路制造(上海)有限公司 | Method and apparatus for quickly cooling and annealing of wafer |
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