CN106546368A - A kind of method for characterizing film residual stress - Google Patents
A kind of method for characterizing film residual stress Download PDFInfo
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- CN106546368A CN106546368A CN201610919414.3A CN201610919414A CN106546368A CN 106546368 A CN106546368 A CN 106546368A CN 201610919414 A CN201610919414 A CN 201610919414A CN 106546368 A CN106546368 A CN 106546368A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/0047—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes measuring forces due to residual stresses
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- General Physics & Mathematics (AREA)
- Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
The present invention relates to a kind of method for characterizing film residual stress, including：Using the print of film/substrate structure, the short pulse laser beam that laser instrument launches certain frequency and energy being controlled, linear beam being pooled on print surface, print surface produces ultrasonic surface wave；Piezoelectric transducer is detected, and gathers discrete time-domain voltage signal；Obtain testing dispersion curve；Model and obtain the film/substrate model theory dispersion curve under without residual stress state；Experiment dispersion curve is compared with theoretical dispersion curve, the qualitative big minispread for determining print film residual stress.The present invention can quickly, Non-Destructive Testing film residual stress.
Description
Technical field
The invention belongs to film characteristics representational field, is a kind of ultrasonic surface wave technology Non-Destructive Testing film residual stress
Method.
Background technology
Residual stress in film is divided into compression and tension from the point of view of the external effect of power, when compression is excessive
Wait, will make film that flexing occurs, so weaken adhesion of thin film, film is departed from substrate；When tension it is excessive
When, film can be made to produce fold, or even rupture occur.If in ic manufacturing process, it is impossible to discovered in film in time
The excessive situation of residual stress, proceeds the work of next step, then will certainly have a strong impact on the performance of integrated circuit.Therefore,
In film, the detection of residual stress is significant.Ultrasonic surface wave method measures the principle of film mechanical property parameter foundation
It is：Ultrasonic surface wave is dispersion when propagating in the hierarchy of film/substrate, surface wave velocity of wave except relevant with frequency,
Density, elastic constant also with the thickness of film, density, elastic constant, residual stress and base material is relevant.Will respectively by
Theoretical model and experimental signal process the dispersion curve for obtaining and carry out approaching the parameter that film print can be just measured in matching.This
It is bright to provide a kind of method of nondestructive characterisation (NDC) print film residual stress based on this, i.e.,：Based on Vocal cord injection, set up a kind of primary
Theoretical calculation model, the dispersion curve Changing Pattern under the different residual stress effect of research, by with laser excitation sound surface
The dispersion curve that the experiment of ripple detection film characteristics draws is fitted, so as to the size of qualitative characterization's film residual stress.
The content of the invention
It is an object of the invention to provide a kind of quick, method of Non-Destructive Testing film residual stress, effectively thin to low-k
Film residual stress is characterized.Technical scheme is as follows：
A kind of method for characterizing film residual stress, comprises the following steps：
1) using the print of film/substrate structure, control the short-pulse laser that laser instrument launches certain frequency and energy
Beam, finally pools linear beam on print surface through optical adjustment system, and print surface produces ultrasonic surface wave；
2) surface wave is detected by piezoelectric transducer after certain distance is propagated on print surface, then through signal condition and data
Discrete time-domain voltage signal is obtained after collection；
3) the discrete time-domain voltage signal to collecting carries out, including the Mathematical treatment including Fourier transform, being tested
Dispersion curve；
4) density of the film and substrate of print, Young's modulus, Poisson's ratio, thickness are substituted into into MATLAB in interior other specification
In theoretical model,
5) in theoretical model with stress t characterizing the size of residual stress, make t=0, operation program then obtain without remnants
Film under stress state/substrate model theory dispersion curve；
6) experiment dispersion curve is compared with theoretical dispersion curve during stress t=0, it is stipulated that t<Pressure is shown as when 0
Stress, t>Tension is shown as when 0, its residual stress type is thus judged, then by changing the value of stress t finding out and reality
The value of the most close theoretical curve stress t of dispersion curve is tested, is repeated the stress t values that test measures one group of print, is ranked up, from
And the qualitative big minispread for determining print film residual stress.
Description of the drawings
Fig. 1 is the laser excitation surface acoustic wave detection film residual stress system schematic that the present invention is adopted.
When Fig. 2 surface waves are propagated along Si [100] direction, impact of the different compression to dispersion curve.
When Fig. 3 surface waves are propagated along Si [100] direction, impact of the different tensions to dispersion curve.
When Fig. 4 surface waves are propagated along Si [110] direction, impact of the different compression to dispersion curve.
When Fig. 5 surface waves are propagated along Si [110] direction, impact of the different tensions to dispersion curve.
Specific embodiment
The trial curve that surface acoustic wave is propagated on print surface, laser are measured using laser excitation surface acoustic wave experimental system
Surface acoustic wave detection film residual stress system schematic is excited as shown in figure 1, wherein adopting MNL 801S type Nitrogen Lasers
Device, wavelength are 337.1nm, and average pulse energy is 400uJ.Piezoelectric transducer is by polyvinylidene difluoride film (PVDF) and self-control wedge
Shape probe composition.Amplifier be high power wideband voltage amplifier MITEQ AU-1338 types, digital oscilloscope adopt
TektronicsTDS3000B types, with a width of 300MHz, highest sampling subrate is 2.5GS/s.Experiment used by print be film/
Substrat structure, is so that result is more accurate, need to ensure that measured print belongs to a collection of, with highly similar Young mould
In measurement process, amount, density and Poisson's ratio, should ensure that same group of data identical crystal orientation is measured.Concrete measurement process is such as
Under：
(1) launch the short pulse laser beam of certain frequency and energy by computer controlled laser.Adjust through optics
Whole system finally pools linear beam on print surface, and due to thermoelastic effect, print surface will produce ultrasonic surface wave；
(2) surface wave is detected by piezoelectric transducer after certain distance is propagated on print surface, is adopted after amplifier amplifies
Sample is stored in digital oscilloscope.
(3) the discrete time-domain voltage signal to collecting is carried out including a series of Mathematical treatments including Fourier transform,
So as to obtain testing dispersion curve.
Print other specification is substituted in MATLAB theoretical models, the relevant parameter setting of film and substrate is shown in Table 1.It is resonable
By in model with stress t characterizing the size of residual stress.T=0, operation program is made then to obtain thin under without residual stress state
Film/substrate model theory dispersion curve.
Experiment dispersion curve is compared with theoretical dispersion curve during stress t=0, it is stipulated that t<Pressure is shown as when 0 should
Power, t>Tension is shown as when 0, its residual stress type is thus judged.It is analyzed as follows when surface wave is propagated along different crystal orientations：
(1) set surface wave to propagate along Si surfaces [100] direction, when t is compression, frequency-velocity dispersion curve is such as
Shown in Fig. 2, under fixed frequency, reduce with the increase of compression；When t is tension, frequency-velocity dispersion curve is such as
Shown in Fig. 3, under fixed frequency, increase with the increase of tension.And when [100] direction is propagated, differ 200MPa's
Curvilinear motion is relatively small；
(2) set surface wave to propagate along Si surfaces [110] direction, when t is compression, frequency-velocity dispersion curve is such as
Shown in Fig. 4, under fixed frequency, reduce with the increase of compression；When t is tension, frequency-velocity dispersion curve is such as
Shown in Fig. 5, under fixed frequency, increase with the increase of tension.And when [110] direction is propagated, differ 200MPa's
Curvilinear motion is relatively large.
The size of print film residual stress can be ranked up according to above rule.By change stress t value come
The theoretical curve most close with experiment dispersion curve is found out, so that it is determined that the t values corresponding to tested print.Repeat test and measure one
The stress t values of group print, are ranked up, so as to the qualitative big minispread for determining print film residual stress.
The parameter setting of 1 film/substrate structure of table
Claims (1)
1. a kind of method for characterizing film residual stress, comprises the following steps：
1) using the print of film/substrate structure, the short pulse laser beam that laser instrument launches certain frequency and energy, Jing are controlled
Crossing optical adjustment system and finally linear beam being pooled on print surface, print surface produces ultrasonic surface wave；
2) surface wave is detected by piezoelectric transducer after certain distance is propagated on print surface, then through signal condition and data acquisition
Discrete time-domain voltage signal is obtained afterwards；
3) the discrete time-domain voltage signal to collecting is carried out including the Mathematical treatment including Fourier transform, obtains testing frequency dispersion
Curve；
4) will be the density of the film and substrate of print, Young's modulus, Poisson's ratio, thickness theoretical in interior other specification substitution MATLAB
In model,
5) in theoretical model with stress t characterizing the size of residual stress, make t=0, operation program then obtain without residual stress
Film under state/substrate model theory dispersion curve；
6) experiment dispersion curve is compared with theoretical dispersion curve during stress t=0, it is stipulated that t<Compression is shown as when 0,
t>Tension is shown as when 0, its residual stress type is thus judged, then by change stress t value come find out and test frequency
The value of the most close theoretical curve stress t of non-dramatic song line, repeats the stress t values that test measures one group of print, is ranked up, depending on
Property determines the big minispread of print film residual stress.
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| CN201610919414.3A CN106546368A (en) | 2016-10-21 | 2016-10-21 | A kind of method for characterizing film residual stress |
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| CN201610919414.3A CN106546368A (en) | 2016-10-21 | 2016-10-21 | A kind of method for characterizing film residual stress |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108168747A (en) * | 2018-02-11 | 2018-06-15 | 浙江大学 | A kind of workpiece surface residual stress measurement devices and methods therefor based on laser-ultrasound |
| CN108426545A (en) * | 2018-03-22 | 2018-08-21 | 天津大学 | A method of using ultrasonic surface wave non-destructive testing film thickness |
| CN108827514A (en) * | 2018-07-19 | 2018-11-16 | 天津大学 | A kind of method of laser nondestructive characterisation (NDC) silica membrane residual stress |
| CN108871640A (en) * | 2018-06-13 | 2018-11-23 | 西安交通大学 | Residual stress nondestructive detection system and method based on transient grating Laser thermo-elastic generated surface acoustic waves |
| CN109521090A (en) * | 2018-10-18 | 2019-03-26 | 天津大学 | A kind of optimization method of laser nondestructive characterisation (NDC) film Young's modulus |
| CN111931405A (en) * | 2020-07-31 | 2020-11-13 | 天津大学 | Parameter optimization method of laser excitation surface acoustic wave measurement system |
| CN112880895A (en) * | 2019-11-29 | 2021-06-01 | 哈尔滨工业大学 | Nonlinear ultrasonic wave-based large-scale high-speed rotation equipment blade residual stress measurement method |
| CN113543548A (en) * | 2021-07-14 | 2021-10-22 | 深圳普泰电气有限公司 | Ultrahigh current monitoring and processing system |
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| US5546811A (en) * | 1995-01-24 | 1996-08-20 | Massachusetts Instittue Of Technology | Optical measurements of stress in thin film materials |
| CN101876647A (en) * | 2010-07-05 | 2010-11-03 | 天津大学 | Bidirectional detection method of Young modulus and Poisson constant by ultrasonic surface wave |
| CN102520066A (en) * | 2011-11-24 | 2012-06-27 | 天津大学 | Method for measuring Young modulus of inlaid thin film |
| CN203688116U (en) * | 2013-12-18 | 2014-07-02 | 深圳职业技术学院 | Thin film stress tester |
| CN105300578A (en) * | 2015-11-20 | 2016-02-03 | 西南交通大学 | Ultrasonic-wave stress detection device capable of adjusting acoustic beam angle and test area |
| CN205449361U (en) * | 2015-12-23 | 2016-08-10 | 北京航天益森风洞工程技术有限公司 | Residual stress test equipment |
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| US5546811A (en) * | 1995-01-24 | 1996-08-20 | Massachusetts Instittue Of Technology | Optical measurements of stress in thin film materials |
| CN101876647A (en) * | 2010-07-05 | 2010-11-03 | 天津大学 | Bidirectional detection method of Young modulus and Poisson constant by ultrasonic surface wave |
| CN102520066A (en) * | 2011-11-24 | 2012-06-27 | 天津大学 | Method for measuring Young modulus of inlaid thin film |
| CN203688116U (en) * | 2013-12-18 | 2014-07-02 | 深圳职业技术学院 | Thin film stress tester |
| CN105300578A (en) * | 2015-11-20 | 2016-02-03 | 西南交通大学 | Ultrasonic-wave stress detection device capable of adjusting acoustic beam angle and test area |
| CN205449361U (en) * | 2015-12-23 | 2016-08-10 | 北京航天益森风洞工程技术有限公司 | Residual stress test equipment |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108168747A (en) * | 2018-02-11 | 2018-06-15 | 浙江大学 | A kind of workpiece surface residual stress measurement devices and methods therefor based on laser-ultrasound |
| CN108426545A (en) * | 2018-03-22 | 2018-08-21 | 天津大学 | A method of using ultrasonic surface wave non-destructive testing film thickness |
| CN108871640A (en) * | 2018-06-13 | 2018-11-23 | 西安交通大学 | Residual stress nondestructive detection system and method based on transient grating Laser thermo-elastic generated surface acoustic waves |
| CN108871640B (en) * | 2018-06-13 | 2020-03-31 | 西安交通大学 | Transient grating laser ultrasonic surface wave-based residual stress nondestructive testing system and method |
| CN108827514A (en) * | 2018-07-19 | 2018-11-16 | 天津大学 | A kind of method of laser nondestructive characterisation (NDC) silica membrane residual stress |
| CN109521090A (en) * | 2018-10-18 | 2019-03-26 | 天津大学 | A kind of optimization method of laser nondestructive characterisation (NDC) film Young's modulus |
| CN112880895A (en) * | 2019-11-29 | 2021-06-01 | 哈尔滨工业大学 | Nonlinear ultrasonic wave-based large-scale high-speed rotation equipment blade residual stress measurement method |
| CN112880895B (en) * | 2019-11-29 | 2022-09-20 | 哈尔滨工业大学 | Nonlinear ultrasonic wave-based large-scale high-speed rotation equipment blade residual stress measurement method |
| CN111931405A (en) * | 2020-07-31 | 2020-11-13 | 天津大学 | Parameter optimization method of laser excitation surface acoustic wave measurement system |
| CN113543548A (en) * | 2021-07-14 | 2021-10-22 | 深圳普泰电气有限公司 | Ultrahigh current monitoring and processing system |
| CN113543548B (en) * | 2021-07-14 | 2022-09-09 | 深圳普泰电气有限公司 | Ultrahigh current monitoring and processing system |
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Application publication date: 20170329 |