CN106544655A - A kind of preparation method of polyimide surface patterned conductive Ag films - Google Patents
A kind of preparation method of polyimide surface patterned conductive Ag films Download PDFInfo
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- CN106544655A CN106544655A CN201610895204.5A CN201610895204A CN106544655A CN 106544655 A CN106544655 A CN 106544655A CN 201610895204 A CN201610895204 A CN 201610895204A CN 106544655 A CN106544655 A CN 106544655A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
- C23C18/2073—Multistep pretreatment
- C23C18/2086—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
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Abstract
The invention provides a kind of preparation method of polyimide surface patterned conductive Ag films, methods described includes：Kapton is carried out into activation processing using highly basic first；Silver nitrate solution is recycled to carry out the Kapton that ion exchange prepares dissimulated electricity silver ion；Then selective reduction process is carried out using plasma jet prepare patterned Nano silver grain figure layer；The patterned conductive Ag films of polyimide surface are obtained through chemical silver plating method again.The present invention can be taken into account quickly with three-dimensional polyimide surface in two dimension, and the advantage of low cost and high selectivity prepares the Ag films with high conductivity.The present invention has good application prospect in fields such as flexible electronic, MEMS.
Description
Technical field
The present invention relates to flexible polymer surface metalation preparation method, in particular it relates to one kind is penetrated based on plasma
The preparation method of the polyimide surface patterned conductive Ag films of stream reducing process.
Background technology
Polyimides (PI) material is due to its excellent physical property, mechanical performance, and low dielectric constant and high
Heat stability so which has good application prospect in flexible electronic and MEMS fields.But pure PI to limit which big
Sizable application, if a layer pattern metallic film can be deposited on PI surfaces, strengthens its electric conductivity, will expand significantly which and use model
Enclose.In numerous method for metallising, the method for carrying out chemical plating using metal seed layer has more advantage.And to metal kind
The preparation of sublayer nowadays mainly has high-temperature heat treatment method, micro- contact method and induced with laser method.
Jing is retrieved, and egret aigret et al. is in " preparation of polyimide/silver composite film and surface micro-structure are characterized ", chemical work
Cheng Shi, 232 (1), the side that a kind of employing high-temperature heat treatment method restores surface Nano silver grain is described in 14-18 (2015)
Method.But the high-temperature heat treatment in the method not only have impact on the PI thin film performance of itself, and the method simply realizes big face
Long-pending nano surface silvery is standby, it is impossible to realize graphical.
Graphical in order to realize, S.Gout et al. are in " Silver localization on polyimide using
microcontact printing andelectroless metallization”,Applied Surface Science,
Micro- contact method that a kind of employing PDMS seals are described in 307,716-723 (2014) is realized graphically preparing nanometer silver seed
Layer.The method is patterned the preparation of nanometer silver Seed Layer i.e. with patterned PDMS seals as mask to PI surfaces.But
The method PDMS making stamp is complicated, long preparation period, and not high to the motility of different graphic pattern.
Lu Qinghua et al. is in patent of invention " method of Kapton laser induced selective chemical plating " (publication number
CN 1772948A, application number：200510110438.6) side that a kind of induced with laser method prepares nanometer silver Seed Layer is described in
Method.The method has good selectivity, but the method needs expensive laser equipment, high cost.And the method is utilized
After induced with laser prepares nanometer silver Seed Layer, copper metal layer is prepared on PI surfaces using chemical-copper-plating process, not to leading
Electric silver figure layer is studied.
Although above method solves the preparation of the metallized film on PI surfaces to a certain extent, still can not be simultaneous
Turn round and look at the advantages such as selectivity, low cost, short cycle.And conductive copper metal layer thin film is mostly prepared, conductive Ag films are not entered
Row research.Additionally, above method is metallized film preparation to be carried out for the PI thin film of two dimensional surface, can not realize three-dimensional
Nonplanar PI surface metal patternizations film preparation.So as to limit the metallized flexible Applications of PI.
The content of the invention
For defect of the prior art, it is an object of the invention to provide a kind of based on the poly- of plasma jet reducing process
The preparation method of acid imide surface graphics conduction Ag films, solves present in existing Kapton surface metalation
Selectivity, low cost, short cycle can not be taken into account and the polyimide surface metal thin-film pattern of three dimensional nonplanar cannot be realized
Change the deficiencies such as preparation, can take into account quickly with three-dimensional polyimide surface in two dimension, the advantage preparation of low cost and high selectivity
Go out the Ag films with high conductivity.
To realize object above, the present invention provides a kind of preparation method of polyimide surface patterned conductive Ag films,
The method comprising the steps of：
Step one, activation processing：
Immerse in potassium hydroxide solution after Kapton acetone is cleaned up and soak so that Kapton
Surface is hydrolyzed and produces acid imide acid potassium, deionized water cleaning after taking-up；
Step 2, ion exchange：
Kapton after step one is processed is immersed in silver nitrate solution so that Kapton table
Potassium ion in the acid imide acid potassium that face generates swaps generation silver ion activation film with the silver ion in silver nitrate solution, takes
Go out rear deionized water cleaning；
Step 3, reduction treatment：
Kapton after step 2 is processed is placed on below atmosphere pressure plasma jet flow, using air
It is Nano silver grain that the silver ion produced in step 2 is activated electronics in pressure plasma jet the silver ion reduction in film；
Step 4, chemical plating：
Kapton after step 3 is processed is immersed in the plating solution of chemical silvering carries out chemical plating, has plated
Clean water is used afterwards, and it is the tens conductive silver Thinfilm patterns for arriving hundreds of nano thickness to obtain thickness on Kapton surface.
Preferably, in step one, the concentration of the potassium hydroxide solution is 1-5mol/L, and optium concentration is 5mol/L.Should
Parameter selects to consider pretreatment time and two angles of damage to Kapton thin film.It is if concentration is too low, pre- to locate
The reason time increases, if excessive concentration easily produces damage to Kapton.
Preferably, in step one, the immersion, time are 1-2 minutes.
Preferably, in step 2, the concentration of the silver nitrate solution is 0.05-1mol/L.The parameter select to consider from
Sub- exchange rate and saving two angles of material.If concentration is too low, velocity of ion exchange is too low, takes, if excessive concentration,
Do not increase velocity of ion exchange, but but cause the waste to silver nitrate.Optium concentration adopts 0.06mol/L herein.
Preferably, in step 2, the immersion, time are 10-60 minutes.
Preferably, in step 3, the plasma jet is produced using a glass-micropipe, and glass-micropipe is directly connected to
High voltage power supply, is passed directly into working gas in glass-micropipe.
It is highly preferred that the plasma jet adopts argon or helium for working gas, the flow of working gas is 30-
500sccm.The parameter selects the impact two of the complexity and the Nano silver grain to producing for considering plasma generation
Individual angle.If helium gas flow is too low or too high, it is difficult to produce stable plasma jet.In addition, for too high helium
The Nano silver grain that Kapton surface reduction goes out may be blown away by flow.Optimal flow adopts 60sccm herein.
It is highly preferred that the high voltage power supply is high-voltage ac power, or pulse dc power, or high-voltage radio-frequency power supply.
It is highly preferred that the glass-micropipe is arranged on a five-axle linkage motion platform, with Kapton
Realize the reduction treatment of two dimension and three-dimensional arbitrary graphic.The present invention drives plasma to penetrate by a five-axle linkage motion platform
Stream motion, therefore the selective reduction Nano silver grain of free routing can be realized on Kapton surface.
It is highly preferred that the internal diameter of the glass-micropipe in nanometer to micron dimension.
Preferably, in step 4, the bath composition of the chemical silvering is：0.06mol/L silver nitrate, 5mol/L ammonia and
0.02mol/L formaldehyde.The parameter area has taken into account the speed and coating quality of chemical plating, can obtain more preferable effect.
Preferably, in step 4, the time of the chemical plating is the 30-180 seconds.The parameter is selected to be obtained according to experimental result
Arrive, it is contemplated that two factors of coating film thickness and conductivity.Too short electroless plating time, by the Ag films thickness that cannot be wanted,
Long electroless plating time, although film thickness increases always, conductivity will be held essentially constant, so if be in order to
If generating conductive film, it is not necessary that be further continued for increasing the time of chemical plating.Optimal time selection 180 seconds herein.
Compared with prior art, the present invention has following beneficial effect：
The present invention solves and selectivity can not be taken into account present in existing Kapton surface metalation, low cost,
The short cycle and cannot realize three dimensional nonplanar polyimide surface metal thin-film patternization prepare etc. deficiency, can be in two dimension
Take into account quickly with three-dimensional polyimide surface, the advantage of low cost and high selectivity prepares the Ag films with high conductivity.
Description of the drawings
Detailed description non-limiting example made with reference to the following drawings by reading, the further feature of the present invention,
Objects and advantages will become more apparent upon：
Method flow schematic diagrams of the Fig. 1 for one embodiment of the invention；
Plasma jet device schematic diagrams of the Fig. 2 for one embodiment of the invention；
Fig. 3 is the sample drawing that one embodiment of the invention prepares point-like conduction Ag films on Kapton surface, wherein：
A () is micro- enlarged drawing, (b) scheme for surface topography SEM；
Fig. 4 is the sample drawing that one embodiment of the invention prepares wire conductive silver thin film on Kapton surface, wherein：
A () is micro- enlarged drawing, be (b) corresponding topographical profiles curve in (a), be (c) in cylindric Kapton surface system
The micro- enlarged drawing of standby line-shaped conductive Ag films；
Fig. 5 is the EDS figures of conductive Ag films prepared by one embodiment of the invention；
Fig. 6 is the XRD figure of conductive Ag films prepared by one embodiment of the invention.
Specific embodiment
With reference to specific embodiment, the present invention is described in detail.Following examples will be helpful to the technology of this area
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill to this area
For personnel, without departing from the inventive concept of the premise, some deformations and improvement can also be made.These belong to the present invention
Protection domain.
Embodiment 1
As shown in figure 1, a kind of preparation method of polyimide surface patterned conductive Ag films, comprises the following steps：
Step one, activation processing：
Immerse after Kapton (PI thin film) is cleaned up with acetone in potassium hydroxide (KOH) solution of 5mol/L
Immersion 1 minute, takes out deionized water cleaning afterwards；
Step 2, ion exchange：
Kapton after step one is processed is soaked 10 minutes in being immersed in the silver nitrate solution of 0.06mol/L,
Deionized water cleaning is taken out afterwards；
Step 3, plasma deoxidization process：
Kapton after step 2 is processed is placed on below atmosphere pressure plasma jet flow, using plasma
Jet selective reduction goes out patterned Nano silver grain；Plasma jet can restore Nano silver grain, preferably, when
Plasma jet is driven according to the path planned by five-axle linkage motion platform, will produce patterned Nano silver grain.
Step 4, chemical plating：
Kapton after step 3 is processed carries out chemical plating in being immersed in the plating solution of homemade chemical silvering, when
Between be 120 seconds.The bath composition of chemical silvering is：0.06mol/L silver nitrate, 5mol/L ammonia and 0.02mol/L formaldehyde.Plate
Afterwards use clean water, obtain thickness be tens in the conductive silver Thinfilm pattern i.e. accompanying drawing 1 of hundreds of nano thickness patterned silver
Thin film.
Embodiment 2
The present embodiment provides a kind of preparation method of polyimide surface patterned conductive Ag films, with 1 step of embodiment
Identical, difference is step 2：The plasma jet is produced using a quartz glass micro-pipe, and glass-micropipe is direct
Connection high voltage power supply, is passed directly into working gas in glass-micropipe.
The plasma jet mainly adopts helium for working gas, and flow is 60sccm.
The high voltage power supply for producing plasma jet be high-voltage ac power, applied voltage 5kV, frequency
20kHz。
The glass-micropipe internal diameter is 400 microns.
Embodiment 3
The present embodiment provides a kind of preparation method of polyimide surface patterned conductive Ag films, with 2 step of embodiment
Identical, difference is step 2：Glass-micropipe for producing plasma jet is arranged on a five-axle linkage campaign
On platform (as shown in Figure 2), the reduction treatment of two dimension and three-dimensional arbitrary graphic can be realized on Kapton.
As shown in figure 1, soaking in the potassium hydroxide solution of immersion 5mol/L after Kapton acetone is cleaned up
Bubble carries out activation processing in 1 minute, takes out deionized water cleaning afterwards；The silver nitrate solution of 0.06mol/L is immersed in again
Middle immersion carries out ion exchange in 10 minutes, takes out deionized water cleaning afterwards；Kapton after ion exchange is put
Put below atmosphere pressure plasma jet flow, 60sccm helium is passed through as working gas and adjusts high-voltage ac power to 5kV,
So as to produce atmosphere pressure plasma jet flow (as shown in Figure 2)；Generation etc. is driven using computer program control five-axle linkage platform
The glass-micropipe of gas ions jet is moved according to both fixed tracks, using plasma jet in Kapton surface selectivity
Restore Nano silver grain；Kapton after finally reduce plasma jet is immersed in homemade chemical silvering
Chemical plating is carried out in plating solution, the time is 120 seconds, clean water is used after chemical plating is complete, obtain thickness for tens to hundreds of nanometer thickness
The conductive silver Thinfilm pattern (respectively as shown in (a) (b), (c) in (a), (b) and Fig. 4 in Fig. 3) of degree；By SEM, EDS and
XRD (being illustrated in figure 5 the EDS figures of the conductive Ag films of preparation, be illustrated in figure 6 the XRD figure of the conductive Ag films of preparation) point
Analysis is it can be seen that the method has successfully prepared conductive Ag films, and film quality is high；Preparation can be measured using four probe method
Conductive silver film resiativity is 3.89 ± 0.4 μ Ω cm, with very high electric conductivity.
In addition, as shown in Fig. 4 (c), also successfully having prepared line-shaped conductive silver on cylindric Kapton surface thin
Film, illustrates that the preparation method can carry out metal patternization thin film system on the Kapton surface of three dimensional nonplanar
It is standby, so as to meet the different demands of flexible electronic and MEMS fields.
In other embodiment, by changing plasma jet recovery time, electroless plating time and can use not
The movement locus of same five-axle linkage platform, so as to prepare with different-thickness in two dimension or three-dimensional Kapton
With the conductive Ag films of shape.
The present invention solves and selectivity can not be taken into account present in existing Kapton surface metalation, low cost,
The short cycle and cannot realize three dimensional nonplanar polyimide surface metal thin-film patternization prepare etc. deficiency, can be in two dimension
Take into account quickly with three-dimensional polyimide surface, the advantage of low cost and high selectivity prepares the Ag films with high conductivity.
Above the specific embodiment of the present invention is described.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, those skilled in the art can make various modifications or modification within the scope of the claims, this not shadow
Ring the flesh and blood of the present invention.
Claims (9)
1. a kind of preparation method of polyimide surface patterned conductive Ag films, it is characterised in that methods described includes following
Step：
Step one, activation processing：
Immerse in potassium hydroxide solution after Kapton acetone is cleaned up and soak so that Kapton surface
Be hydrolyzed generation acid imide acid potassium, deionized water cleaning after taking-up；
Step 2, ion exchange：
Kapton after step one is processed is immersed in silver nitrate solution so that give birth on Kapton surface
Into acid imide acid potassium in potassium ion and silver nitrate solution in silver ion swap generation silver ion activation film, after taking-up
Deionized water is cleaned；
Step 3, reduction treatment：
Kapton after step 2 is processed is placed on below atmosphere pressure plasma jet flow, using atmospheric pressure etc.
It is Nano silver grain that the silver ion produced in step 2 is activated electronics in gas ions jet the silver ion reduction in film；
Step 4, chemical plating：
Kapton after step 3 is processed is immersed in the plating solution of chemical silvering carries out chemical plating, use after having plated
Clean water, it is the tens conductive silver Thinfilm patterns for arriving hundreds of nano thickness to obtain thickness on Kapton surface.
2. the preparation method of a kind of polyimide surface patterned conductive Ag films according to claim 1, its feature exist
In, in step one, the concentration of the potassium hydroxide solution is 1-5mol/L.
3. the preparation method of a kind of polyimide surface patterned conductive Ag films according to claim 1, its feature exist
In, in step 2, the concentration of the silver nitrate solution is 0.05-1mol/L.
4. the preparation method of a kind of polyimide surface patterned conductive Ag films according to claim 1, its feature exist
In in step 3, the plasma jet is produced using a glass-micropipe, and glass-micropipe is directly connected to high voltage power supply, glass
Working gas is passed directly in glass micro-pipe.
5. the preparation method of a kind of polyimide surface patterned conductive Ag films according to claim 4, its feature exist
In the working gas adopts argon or helium, and the flow of working gas is 30-500sccm.
6. the preparation method of a kind of polyimide surface patterned conductive Ag films according to claim 4, its feature exist
In, the high voltage power supply be high-voltage ac power, or pulse dc power, or high-voltage radio-frequency power supply.
7. the preparation method of a kind of polyimide surface patterned conductive Ag films according to claim 4, its feature exist
In the glass-micropipe is arranged on a five-axle linkage motion platform, to realize two dimension with three-dimensional on Kapton
The reduction treatment of arbitrary graphic.
8. the preparation method of a kind of polyimide surface patterned conductive Ag films according to claim 7, its feature exist
In, the glass-micropipe internal diameter in nanometer to micron dimension.
9. the preparation method of a kind of polyimide surface patterned conductive Ag films according to any one of claim 1-8,
Characterized in that, in step 4, the bath composition of the chemical silvering is：0.06mol/L silver nitrate, 5mol/L ammonia and
0.02mol/L formaldehyde.
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Cited By (8)
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| CN107338426A (en) * | 2017-06-09 | 2017-11-10 | 北京化工大学 | A kind of method in Kapton superficial growth high-adhesion silver metal pattern |
| CN107920425A (en) * | 2017-10-12 | 2018-04-17 | 华东师范大学 | A kind of flexible thin film circuit preparation method |
| CN108419375A (en) * | 2018-04-11 | 2018-08-17 | 电子科技大学 | A kind of printed electronic technique |
| CN110082407A (en) * | 2019-03-29 | 2019-08-02 | 华东师范大学 | A kind of flexibility gold electrode and preparation method |
| CN111864331A (en) * | 2020-07-06 | 2020-10-30 | 南通大学 | Manufacturing method of flexible microwave filter |
| CN113096851A (en) * | 2021-03-17 | 2021-07-09 | 华中科技大学 | Complex curved surface high-adhesion conductive pattern structure and manufacturing method thereof |
| CN113121857A (en) * | 2021-06-01 | 2021-07-16 | 桂林电器科学研究院有限公司 | Low-dielectric-property polyimide film and preparation method thereof |
| CN113293364A (en) * | 2020-02-24 | 2021-08-24 | 北京化工大学 | Method for continuously preparing surface-silvered polyimide film |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107338426A (en) * | 2017-06-09 | 2017-11-10 | 北京化工大学 | A kind of method in Kapton superficial growth high-adhesion silver metal pattern |
| CN107338426B (en) * | 2017-06-09 | 2019-06-18 | 北京化工大学 | A method of high-adhesion silver metal pattern is grown on Kapton surface |
| CN107920425A (en) * | 2017-10-12 | 2018-04-17 | 华东师范大学 | A kind of flexible thin film circuit preparation method |
| CN108419375A (en) * | 2018-04-11 | 2018-08-17 | 电子科技大学 | A kind of printed electronic technique |
| CN110082407A (en) * | 2019-03-29 | 2019-08-02 | 华东师范大学 | A kind of flexibility gold electrode and preparation method |
| CN113293364A (en) * | 2020-02-24 | 2021-08-24 | 北京化工大学 | Method for continuously preparing surface-silvered polyimide film |
| CN111864331A (en) * | 2020-07-06 | 2020-10-30 | 南通大学 | Manufacturing method of flexible microwave filter |
| CN111864331B (en) * | 2020-07-06 | 2021-07-06 | 南通大学 | Manufacturing method of flexible microwave filter |
| CN113571862A (en) * | 2020-07-06 | 2021-10-29 | 南通大学 | Rapid manufacturing method of flexible filter |
| CN113571862B (en) * | 2020-07-06 | 2022-04-26 | 南通大学 | Rapid manufacturing method of flexible filter |
| CN113096851A (en) * | 2021-03-17 | 2021-07-09 | 华中科技大学 | Complex curved surface high-adhesion conductive pattern structure and manufacturing method thereof |
| CN113121857A (en) * | 2021-06-01 | 2021-07-16 | 桂林电器科学研究院有限公司 | Low-dielectric-property polyimide film and preparation method thereof |
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| CN106544655B (en) | 2019-10-08 |
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