CN106542494A - A kind of method for preparing the not contour micro-nano structure of multilamellar - Google Patents
A kind of method for preparing the not contour micro-nano structure of multilamellar Download PDFInfo
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- CN106542494A CN106542494A CN201610850447.7A CN201610850447A CN106542494A CN 106542494 A CN106542494 A CN 106542494A CN 201610850447 A CN201610850447 A CN 201610850447A CN 106542494 A CN106542494 A CN 106542494A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
Abstract
The invention discloses the multilamellar micro-nano structure manufacture method in a kind of flexible structure.Not contour micro-nano structure to be prepared is classified by the method according to structure height；The micro-nano structure of minimum altitude part is prepared by the way of PDMS is to silicon masterplate replica；Using high guarantor's type transfer method, successively from low to high using the micro-nano structure of remaining height component as PDMS structures to be transferred, transfer preparation is carried out, until prepared by the micro-nano structure part of maximum height finishing.The present invention is by successively shifting the preparation that single layer structure completes the not contour micro-nano structure of multilamellar to the method on base layer structure.Technical process is simple, it is easy to accomplish micro-nano structure is integrated, will be widely used in the bionical making of multilamellar micro-nano structure and the making of super-drainage structure.
Description
Art
The invention belongs to integrated circuit and micro-nano electronic mechanical system are made in field, more particularly to a kind of flexible structure
In multilamellar micro-nano structure manufacture method.
Background technology
The not contour micro-nano structure of multilamellar is in bionics, in optics, Surface Science, before medicine and other fields extensive application
Scape.Multilamellar micro-nano structure is anti-freeze, super-hydrophobic, and widely studied and application has been carried out in the field such as heat transfer.However, adopting
Not contour multilamellar micro-nano structure cannot be prepared with the etching-replication method of traditional single mask plate, using the side of alignment
Formula most multipotency completes the micro-nano structure of bilayer and is difficult to ensure that high guarantor's type of prepared multilamellar micro-nano structure, and application also has certain
Limitation.Thus use conventional methods with very big difficulty when multilamellar not contour micro-nano structure is prepared, need for this
Problem proposes new process program.
The content of the invention
The purpose of the present invention is：In order to overcome it is existing prepare multilamellar micro-nano structure method shortcoming, the present invention based on layering-
The thought of assembling proposes a kind of method of transfer assembling, structure is divided into each independent monolayer, by wherein minimum one layer
Structure is set to structured base layer, each independent structure sheaf transfer is bonded on base layer structure by the method for successively shifting,
Finally complete the preparation of the not contour micro-nano structure of multilamellar.
The technical scheme is that：It is a kind of to be used for the not contour micro-nano structure manufacture method of multilamellar, including following three big steps
Suddenly：
Step one：Not contour micro-nano structure to be prepared is classified according to structure height, is obtained height and is respectively h1,
The structure of h2 ... hn, h1<h2<……<Hn, n are more than or equal to 2；
Step 2：Adopt PDMS that micro-nano structure of the height for h1 parts is prepared to the mode of silicon masterplate replica；Detailed process
It is as follows：
Sub-step one：The silicon chip mask plate of the part is prepared, and adds alignment mark on mask plate；
Sub-step two：Photoetching and dry etching are carried out to monocrystal silicon 1 with mask plate prepared by sub-step 1, the part is obtained
Silicon template 2；
Sub-step three：Silicon template is poured into by PDMS solution, Jing hot setting replicas go out the PDMS knots of the silicon template
Structure 3；
Step 3：Using high guarantor's type transfer method, successively using height for h2 ... ... hn parts micro-nano structure as waiting to turn
PDMS structures are moved, transfer preparation is carried out, until prepared by the micro-nano structure part of maximum height hn finishing；It is high described in the step to protect
The detailed process of type transfer method is as follows：
Step 1：Prepare the silicon template 5 of certain height PDMS structure to be transferred；Specifically include following sub-step：
Sub-step 1：Prepare the part and need to shift the corresponding silicon chip mask plate of certain height PDMS, and add on mask plate
Plus alignment mark；
Sub-step 2：Photoetching and dry etching are carried out to monocrystal silicon 4 with mask plate prepared by sub-step 1, waits to turn needed for obtaining
Move the silicon template 5 of certain height PDMS structure；
Step 2：Make PDMS transfer layers 8；Specifically include following sub-step：
Sub-step 1：Prepare uniform thickness PDMS layer 6；
More excellent scheme in as the sub-step, the process prepare mold I by making PDMS transfer layers, then will
After the good PDMS of proportioning carries out application of vacuum with firming agent, pour in PDMS transfer layers mold I and realize after solidification；The system
Make PDMS transfer layers prepare mold I detailed process be：Take two pieces of clean 9, four pieces of lucite pads of quartz glass plate
Solid flexible rubber circle 10 is placed on one of quartz glass by 10, four, the solid flexible rubber circle binder clip of block 11,
An open cylindrical cavity is surrounded on plate 9, lucite cushion block 11 is placed on into four positions of solid flexible rubber circle 10, then will
Other one piece of quartz glass plate 9 is with composition PDMS transfer layer systems above being just covered in the direction of nethermost quartz glass version 9
Standby mold cavity I, then uniformly steps up to fix along four direction with binder clip.
Sub-step 2：Uniform thickness PDMS layer 6 and a culture dish prepared by sub-step 1 is put in vitreous evacuated container, is carried out
Evacuation, then by passing through intake valve toward this noble gas of nitrogen injection in casing until inside and outside air pressure balance；Beat rapidly
Unpacking body simultaneously drips silicon fluoride solution in culture dish, then closes rapidly casing and carries out vacuum pumping immediately, stands one
The section time, take out after PDMS uniform thickness layer surfaces deposited one layer of silicon fluoride；Nitrogen during being somebody's turn to do is prevented as shielding gas
The silicon fluoride oxidation deactivation that will be instilled；
Sub-step 3：PDMS blanket layers 6 after 2 fluorination treatment of sub-step are put into insulation in calorstat to take after a period of time
Go out；The process is assembled with the molecule of PDMS uniform thickness layer surfaces to complete silicon fluoride layer 7, makes silicon fluoride layer 7 in its surface
It is more stable to retain.
So far, complete the making of PDMS transfer layers 8.
Step 3：Along the silicon template central authorities PDMS solution that slowly examination drop standard is measured of step 1, treat which from face center toward surrounding
Scatter, slowly stream enters in each structural cavities, it is desirable to which PDMS solution does not spill over silicon chip template surface with exterior domain；
Step 4：The PDMS transfer layers 8 made using step 2, being placed in silicon template 5 in step 3 has the one side of PDMS structures,
It is uniform to apply pressure, take out after solidifying in being put into calorstat, then silicon template 5 is peeled off, each structural cavities in such silicon template 5
Interior PDMS structures are transferred on PDMS transfer layers 8 with regard to guarantor's type；
Apply pressure in order to preferably uniform to PDMS transfer layers 8 in this process, the present invention is used as a kind of more excellent side
Case, uses high precision silicon template and loads cavity come what is realized, and its detailed process includes following sub-step：
Sub-step 1：One piece of clean quartz glass plate 9 is taken, heart district domain fixes one piece with the silicon chip mould for being used wherein
The silicon template 5 of tool comparable size.
Sub-step 2：One piece of clean 9, four pieces of quartz glass plate solid flexible rubber of lucite cushion block 11, is taken separately
Silicon template 5 is fixed on quartz glass plate centre of surface position, solid flexible rubber circle 10 is placed by 10, four binder clips of circle
On the quartz glass plate 9 of sub-step one and an open cylindrical cavity is surrounded, lucite cushion block 11 is placed on into solid flexible rubber
Four positions of cushion rubber 10, then by other one piece of quartz glass plate 9 with the direction covering just to nethermost quartz glass version 9
High precision silicon template loading mould is constituted above and prepares chamber II, then uniformly step up to fix along four direction with binder clip.
Sub-step 3：The high precision silicon template obtained toward sub-step 2 loads mould and prepares that to pour proportioning in chamber II into good
PDMS solution 13, is then placed in solidification in calorstat.PDMS high precision silicons template loading mould I is integrally taken out after being cured.
Silicon template is put into into the high precision silicon template and loads mould 12 so that silicon template surface and high precision silicon template are loaded on mould 12
Surface keeps concordant.
Step 5：It is as on now PDMS transfer layers, transfer has current certain height micro-nano structure to be prepared, this is highly micro-
Micro-nano structure is directed at bonding with base layer structure, and all micro-nano structures less than present level have been prepared on described base layer structure,
Current PDMS transfer layers are peeled off afterwards, have been prepared for all new basic units equal to or less than present level micro-nano structure
Structure；
Finish when prepared by the micro-nano structure part of maximum height hn, the not contour micro-nano structure of multilamellar in the present invention has made
Into.
The invention has the beneficial effects as follows：The present invention completes many to the method on base layer structure by successively shifting single layer structure
The preparation of the not contour micro-nano structure of layer.PDMS flexible structures are made by way of etching photoresist mask first in technical process
The silicon substrate mould of layer, the mode for then first passing through replica copy base layer structure, then by detached monolayer by way of transfer
Structure is shifted via transfer layer successively and is assembled on base layer structure, finally completes the preparation of the not contour micro-nano structure of multilamellar.Technique
Process is simple, it is easy to accomplish micro-nano structure is integrated, by the making for being widely used in bionical multilamellar micro-nano structure and super-hydrophobic knot
In the making of structure.
Description of the drawings
Fig. 1 is the flow chart for preparing height for the micro-nano structure of h1 parts.
Fig. 2 is high guarantor's type transfer method flow chart.
Fig. 3 is that height is directed at the process chart being bonded for the structure sheaf of h1 with the PDMS structure sheafs of certain height.
Fig. 4 is that PDMS transfer layers prepare mold I and high precision silicon template loads mould and prepares chamber II.
Fig. 5 is the big depth-of-field microscope observation figure after the not contour micro-nano structure alignment bonding of the bilayer.
In figure：1- monocrystal silicon I, 2- silicon template, the bottom PDMS structures that 3- replicas go out, 4- monocrystal silicon, 5- silicon templates II, 6-
PDMS blanket layers, 7- silicon fluoride layers, 8-PDMS transfer layers
9 quartz glass plates, the solid flexible rubber circles of 10-, 11- lucite cushion blocks, 12- high precision silicons template load mould
Tool, 13-PDMS solution, 14- uniform loads.
Specific implementation method
Embodiment 1：
This gives a kind of preparation method of the not contour micro-nano structure of multilamellar, the multilamellar micro-nano structure includes height
For 8 μm of rod array structure, and the shuttle-type shape array structure of 10 μm of height.The technique system of the present embodiment multilamellar micro-nano structure
Preparation Method comprises the steps：
Step one：Not contour micro-nano structure to be prepared is classified according to structure height, the column battle array that height is for 8 μm is obtained
Array structure, and the shuttle-type shape array structure that height is 10 μm；
Step 2：Adopt PDMS that height is prepared to the mode of silicon masterplate replica for the column structure highly for 8 μm；
Detailed process includes following sub-step：
Sub-step one：Prepare silicon chip mask plate；Rod array structure, array of structures size are designed by mask：Circle
Column diameter is 5 μm, and cylinder height is 8 μm, and the longitudinal pitch between cylinder is 10 μm, and transverse pitch is 10 μm.Add simultaneously
Alignment mark.
Sub-step two：Photoetching is carried out to monocrystal silicon with mask plate prepared by sub-step one, PDMS knots to be transferred needed for obtaining
The silicon template of structure；Photoetching uses inductively coupled plasma reactive ion etching, its adopt the design parameter of etching technics for：
SF6, gas flow 180sccm/min, etch period 14s；C4F6, gas flow 85sccm/min, passivation time 7s；Etching/
The number of times of passivation cycle is 7-28 time；After etching terminates, using O2 as working gas, photoresist is removed；
Sub-step three：With 10：1 mass ratio proportioning PDMS and firming agent, wherein 10 grams of PDMS liquid, 1 gram of firming agent.
Both are poured in culture dish respectively and is stirred, be put in vacuum drying oven, its evacuation is processed, PDMS to be evacuated to is molten
Vacuum drying oven is closed in liquid during bubble-free, which is taken out from vacuum drying oven；Then it is poured in silicon mould,
Step 3：Using high guarantor's type transfer method, the shuttle-type shape structure that height is for 10 μm is prepared；It is high described in the step to protect
The detailed process of type transfer method is：
Step 1：Prepare the silicon template of PDMS structures to be transferred；Specifically include following sub-step：
Sub-step 1：Prepare silicon chip mask plate；Shuttle-type shape array structure, array of structures size are designed by mask：It is single
Shuttle-type shape structure length is 45 μm, 10 μm of arc radius, and width is 20 μm, and the interstructural longitudinal pitch of shuttle-type shape is 10 μm,
Transverse pitch is 70 μm.Add alignment mark simultaneously.
Sub-step 2：Photoetching is carried out to monocrystal silicon with mask plate prepared by sub-step one, PDMS structures to be transferred needed for obtaining
Silicon template；Photoetching uses inductively coupled plasma reactive ion etching, its adopt the design parameter of etching technics for：SF6,
Gas flow 180sccm/min, etch period 14s；C4F6, gas flow 85sccm/min, passivation time 7s；Etching/passivation
The number of times of circulation is 7-28 time；After etching terminates, using O2 as working gas, photoresist is removed；
Step 2：Make PDMS transfer layers；Specifically include following sub-step：
Sub-step 1：Prepare PDMS blanket layers；In the embodiment, first with 7：1 mass ratio proportioning PDMS and solidification
Agent, wherein 21 grams of PDMS liquid, 3 grams of firming agent.Both are poured in culture dish respectively and is stirred, be put into vacuum drying oven
It is interior, its evacuation is processed, and vacuum drying oven is closed when bubble-free in PDMS solution is evacuated to, which is taken from vacuum drying oven
Go out；Mold is prepared followed by PDMS transfer layers are made：Take two pieces of clean quartz glass plates, four block sizes 2mm × 2mm
The lucite cushion block of × 2mm, an a diameter of 3mm in its natural state, length for 20mm solid flexible rubber circle, four
Binder clip, solid flexible rubber circle is placed on one of quartz glass plate and surrounds an open cylindrical cavity, cushion block is placed
In four positions of nylon rope, then by other one piece of quartz glass plate with the direction covering just to nethermost quartz glass version
Mold is prepared PDMS transfer layers are constituted above, then uniformly steps up to fix along four direction with binder clip；To finally take out
The PDMS solution of good vacuum is poured made PDMS transfer layers into and is prepared in mold, is then wholy placed in calorstat
It is interior, with 60 DEG C of temperature, solidify 8 hours, be drawn off after being cured, PDMS is taken out, is cured by mold of dismantling
Thickness for 2mm PDMS.
Sub-step 2：PDMS blanket layers prepared by sub-step one and a culture dish are put in vitreous evacuated container, are carried out
Evacuation is an atmospheric pressure up to draught head, then by by intake valve, toward nitrogen injection in casing, this noble gas is made
The silicon fluoride oxidation deactivation that will be instilled is prevented for shielding gas, nitrogen injection gas is until inside and outside air pressure balance.Subsequently beat rapidly
Unpacking body simultaneously drips 2-3ml silicon fluoride solution in culture dish, then closes rapidly casing and carries out vacuum pumping immediately, directly
It is an atmospheric pressure to inside and outside differential pressure.Take out after standing 3h.
Sub-step 3：PDMS blanket layers after the process of sub-step bifluoride are put in calorstat with 60 degrees Celsius of temperature
Insulation is taken out after a period of time；The process is assembled with the molecule of PDMS uniform thickness layer surfaces to complete silicon fluoride layer, makes fluorine silicon
Alkane layer is more stable in its surface to retain.
So far, complete the making of PDMS transfer layers.
Step 3：Along the silicon template central authorities PDMS solution that slowly examination drop standard is measured of silicon chip one, treat which from face center toward surrounding
Scatter, slowly stream enters in each structural cavities, it is desirable to which PDMS solution does not spill over silicon template surface with exterior domain；
Step 4：The PDMS transfer layers made using step 2, being placed in silicon template in step 3 has the one side of PDMS structures,
It is uniform to apply pressure, to take out after solidifying in being put into calorstat, then PDMS transfer layers are peeled off, in such silicon template, each structure is empty
The PDMS structures of intracavity are transferred on PDMS transfer layers with regard to guarantor's type；
In order to preferably uniformly apply pressure to PDMS transfer layers in this process, use in the present embodiment high-precision
Degree silicon template loads cavity come what is realized, and its detailed process includes following sub-step：
Sub-step 1：With 5:1 mass ratio proportioning PDMS liquid and firming agent, wherein 15 grams of PDMS liquid qualities, solidification
Agent quality is 3 grams, pours same glass container into, evacuation process is carried out Jing after Glass rod stirs；
Sub-step 2：Make high precision silicon template loading mould and prepare chamber：Take two pieces of clean quartz glass plates, four pieces
The lucite cushion block of size 2mm × 2mm × 2mm, an a diameter of 3mm in its natural state, length are solid soft for 20mm's
Property rubber ring, four binder clips, solid flexible rubber circle are placed on one of quartz glass plate and surround an open circle
Cushion block is placed on four positions of solid flexible rubber circle by chamber, and the thickness by one piece of 20mm × 20mm is that 500 μm of standard is brilliant
Circle double faced adhesive tape is fitted on the pieces of quartz glass plate, then by other one piece of quartz glass plate with just to nethermost quartzy glass
The direction of glass plate is covered in composition high precision silicon template loading mould above and prepares chamber, then equal along four direction with binder clip
It is even to step up to fix；
Sub-step 3：After the completion for the treatment of PDMS solidifications, cavity of dismantling takes out prepared high precision silicon template and loads mould.
In the present embodiment, high guarantor's type transfer process of silicon template micro structure is divided into following sub-step：
Sub-step 1：With 10：1 mass ratio proportioning liquid PDMS and firming agent, carry out evacuation process；
Sub-step 2：Taking-up instrument：Bidirectional flat-nose pliers, size two pieces of quartz glass, aluminum for 50mm × 100mm × 10mm
Foil paper, double faced adhesive tape.Cutting aluminium-foil paper, is entirely fitted on two pieces of quartz glass plates respectively by double faced adhesive tape, by step 5 inner system
Standby high precision silicon template loads mould and is placed on wherein a piece of quartz glass plate, using aluminium-foil paper and the adsorption of PDMS,
Make which be fitted in surface, the silicon template of structure to be shifted is put into into high precision silicon template and is loaded in mould；
Sub-step 3：By the PDMS solution obtained in sub-step one, take, treat which covers surface
, then stand 10min PDMS solution is treated completely in silicon template, the PDMS transfer layers that step 2 is made, edge are quartzy
Gently twist with the fingers toward another side and press in one side of glass plate, it is ensured that bubble-free occurs in twisting with the fingers pressure, until being completely covered on the surface of silicon template.
Sub-step 4：Vertically place Bidirectional flat-nose pliers, by the PDMS transfer layers posted in sub-step three and silicon template together with
Quartz glass plate is placed on the lower clamping face of Bidirectional flat-nose pliers together, is then turned knob and is declined upper clamping face, imposed load
Clamp.Entirety is put in calorstat, with 60 DEG C of temperature-curable 8 hours；
Sub-step 5：After being cured, overall taking-up reversely rotates Bidirectional flat-nose pliers knob, removes clamping face, and PDMS is turned
Move layer integrally to take out together with the structure in silicon template, complete the high guarantor's type transfer in the silicon template of PDMS flexible structures.Then lead to
Excessive depth-of-field microscope observation is put using oxygen plasma respectively according to the relative position relation of alignment mark double-layer structure
Electric treatment mode carries out Corona discharge Treatment respectively to double-layer structure, to improve surface bonding activity, then by double-layer structure pressure
It is tight to be bonded, take out after placing 2h, PDMS transfer layers are peeled off away manually.
Step 5：As on now PDMS transfer layers, transfer has current certain height micro-nano structure to be prepared, i.e. 10 μm of height
Shuttle-type shape array structure；The micro-nano structure is directed at into bonding with base layer structure, is prepared for owning on described base layer structure
It is 8 μm of rod array structure less than the micro-nano structure of present level, i.e. height, peels off current PDMS transfer layers afterwards,
Be prepared for the two of all height micro-nano structures layer by layer not contour micro-nano structure complete.In this enforcement, the big depth of field is micro-
Mirror observation figure is as shown in Figure 5 so far.
Claims (5)
1. it is a kind of to be used for the not contour micro-nano structure manufacture method of multilamellar, it is characterised in that including following three big steps：
Step one：Not contour micro-nano structure to be prepared is classified according to structure height, is obtained height and is respectively h1, h2 ... hn
Structure, h1<h2<……<Hn, n are more than or equal to 2；
Step 2：Adopt PDMS that micro-nano structure of the height for h1 parts is prepared to the mode of silicon masterplate replica；Detailed process is as follows：
Step 3：Using high guarantor's type transfer method, successively using height for h2 ... ... hn parts micro-nano structure as to be transferred
PDMS structures, carry out transfer preparation, until prepared by the micro-nano structure part of maximum height hn finishing.
2. it is a kind of to be used for the not contour micro-nano structure manufacture method of multilamellar as claimed in claim 1, it is characterised in that the step
Two include following sub-step：
Sub-step one：The silicon chip mask plate of the part is prepared, and adds alignment mark on mask plate；
Sub-step two：Photoetching and dry etching are carried out to monocrystal silicon 1 with mask plate prepared by sub-step 1, the silicon of the part is obtained
Template 2；
Sub-step three：Silicon template is poured into by PDMS solution, Jing hot setting replicas go out the PDMS structures 3 of the silicon template.
3. it is a kind of to be used for the not contour micro-nano structure manufacture method of multilamellar as claimed in claim 1, it is characterised in that the step
In three, the detailed process of high guarantor's type transfer method is as follows：
Step 1：Prepare the silicon template 5 of certain height PDMS structure to be transferred；Specifically include following sub-step：
Sub-step 1：Prepare the part and need to shift the corresponding silicon chip mask plate of certain height PDMS, and add right on mask plate
Fiducial mark is remembered；
Sub-step 2：Photoetching and dry etching are carried out to monocrystal silicon 4 with mask plate prepared by sub-step 1, spy to be transferred needed for obtaining
Determine the silicon template 5 of height PDMS structures；
Step 2：Make PDMS transfer layers 8；Specifically include following sub-step：
Sub-step 1：Prepare uniform thickness PDMS layer 6；
Sub-step 2：Uniform thickness PDMS layer 6 and a culture dish prepared by sub-step 1 is put in vitreous evacuated container, carries out taking out true
Sky, then by passing through intake valve toward this noble gas of nitrogen injection in casing until inside and outside air pressure balance；It is rapid to open case
Body simultaneously drips silicon fluoride solution in culture dish, then closes rapidly casing and carries out vacuum pumping immediately, when standing one section
Between, take out after PDMS uniform thickness layer surfaces deposited one layer of silicon fluoride；Should during nitrogen be that prevent as shielding gas will
The silicon fluoride oxidation deactivation of instillation；
Sub-step 3：PDMS blanket layers 6 after 2 fluorination treatment of sub-step are put in calorstat and are taken out after insulation a period of time；Should
Process is assembled with the molecule of PDMS uniform thickness layer surfaces to complete silicon fluoride layer 7, makes silicon fluoride layer 7 more stable in its surface
Retain；
So far, complete the making of PDMS transfer layers 8；
Step 3：Along the silicon template central authorities PDMS solution that slowly examination drop standard is measured of step 1, treat which scatters from face center toward surrounding,
Slowly stream enters in each structural cavities, it is desirable to which PDMS solution does not spill over silicon chip template surface with exterior domain；
Step 4：The PDMS transfer layers 8 made using step 2, being placed in silicon template 5 in step 3 has the one side of PDMS structures, uniformly
Apply pressure, take out after solidifying in being put into calorstat, then silicon template 5 is peeled off, in such silicon template 5 in each structural cavities
PDMS structures are transferred on PDMS transfer layers 8 with regard to guarantor's type；
Step 5：As on now PDMS transfer layers, transfer has current certain height micro-nano structure to be prepared, the height micro-nano is tied
Structure is directed at bonding with base layer structure, has been prepared for all micro-nano structures less than present level, afterwards on described base layer structure
Current PDMS transfer layers are peeled off, all new basic unit's knots equal to or less than present level micro-nano structure have been prepared for
Structure.
4. it is a kind of to be used for the not contour micro-nano structure manufacture method of multilamellar as claimed in claim 3, it is characterised in that the step
The more excellent scheme detailed process of the sub-step 1 in 2 is：Mold I is prepared by making PDMS transfer layers, it is then that proportioning is good
PDMS and firming agent carry out application of vacuum after, pour in PDMS transfer layers mold I and realize after solidification；The making
PDMS transfer layers prepare the detailed process of mold I：Take two pieces of clean 9, four pieces of lucite cushion blocks of quartz glass plate
11st, solid flexible rubber circle 10 is placed on one of quartz glass plate by 10, four binder clips of a solid flexible rubber circle
An open cylindrical cavity is surrounded on 9, lucite cushion block 11 is placed on into four positions of solid flexible rubber circle 10, then will be another
Outer one piece of quartz glass plate 9 is prepared so that composition PDMS transfer layers above are just covered in the direction of nethermost quartz glass version 9
Mold cavity I, then uniformly steps up to fix along four direction with binder clip.
5. it is a kind of to be used for the not contour micro-nano structure manufacture method of multilamellar as claimed in claim 3, it is characterised in that the step
4 more excellent scheme, uses high precision silicon template and loads cavity come what is realized, and its detailed process includes following sub-step：
Sub-step 1：Take one piece of clean quartz glass plate 9, wherein heart district domain fix one piece it is same with the silicon chip mould for being used
The silicon template 5 of equidimension；
Sub-step 2：One piece of clean 9, four pieces of quartz glass plate solid flexible rubber circle of lucite cushion block 11, is taken separately
Silicon template 5 is fixed on quartz glass plate centre of surface position by the 10th, four binder clips, and solid flexible rubber circle 10 is placed on
On the quartz glass plate 9 of sub-step one and an open cylindrical cavity is surrounded, lucite cushion block 11 is placed on into solid flexible rubber
Four positions of circle 10, then by other one piece of quartz glass plate 9 being just covered in the direction of nethermost quartz glass version 9
High precision silicon template loading mould is constituted above and prepares chamber II, then uniformly step up to fix along four direction with binder clip；
Sub-step 3：The high precision silicon template obtained toward sub-step 2 loads mould and prepares that to pour the good PDMS of proportioning in chamber II into molten
Liquid 13, is then placed in solidification in calorstat.PDMS high precision silicons template loading mould I is integrally taken out after being cured.By silicon mould
Plate is put into the high precision silicon template and loads mould 12 so that silicon template surface and high precision silicon template load 12 upper surface of mould and protect
Maintain an equal level neat.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107221578A (en) * | 2017-06-01 | 2017-09-29 | 西南交通大学 | A kind of manufacture method of " I " type structure PDMS matrixes |
| CN107275439A (en) * | 2017-06-01 | 2017-10-20 | 西南交通大学 | A kind of manufacture method of " I " type structure PDMS matrixes based on reverse |
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