CN106531863A - Upside-down mounting LED chip electrode and preparation method thereof - Google Patents
Upside-down mounting LED chip electrode and preparation method thereof Download PDFInfo
- Publication number
- CN106531863A CN106531863A CN201610954442.9A CN201610954442A CN106531863A CN 106531863 A CN106531863 A CN 106531863A CN 201610954442 A CN201610954442 A CN 201610954442A CN 106531863 A CN106531863 A CN 106531863A
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- Prior art keywords
- metal
- thin film
- doped thin
- deposited
- led chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Abstract
The invention discloses an upside-down mounting LED chip electrode and a preparation method thereof. The upside-down mounting LED chip electrode is composed of a metal doped thin film layer, the main body of the metal doped thin film layer is made of a high-reflectivity metal material, 1-10% of the metal material with a high-work function is doped through a co-sputtering method, a P electrode formed by the metal doped thin film layer has a simple structure, has high reflectivity, can also effectively improve the light extraction rate and can also form good ohmic contact with a P-type semiconductor.
Description
Technical field
The present invention relates to semiconductor light emitting field, more particularly to a kind of flip LED chips electrode and preparation method thereof.
Background technology
The Multiple-quantum rank luminescent layer of flip LED chips is located between P-type semiconductor and N-type semiconductor, and chip active layer is sent out
Bottom injection of some meeting of the light for going out from chip, but below chip be solder side and opaque substrate so that this
A part of light can not be used effectively, in order to effectively utilize this part of light, it usually needs arrange below P-type semiconductor
One layer of reflecting layer, the material in reflecting layer are generally metal Ag or metal Al.
During using Ag or Al as reflecting layer, as the work function of metal Ag and Al is all than relatively low, it is impossible to high work function
P-GaN forms good Ohmic contact, so generally needing to arrange one layer of ohmic contact layer on reflecting layer again as transition
Layer, but set transition layer structure can reduce the light emission rate of LED chip.
The content of the invention
The technical problem to be solved is to provide a kind of LED core plate electrode of high reflectance.
The chip electrode is metal-doped thin film, not only with high reflectance, and can be formed well with P-type semiconductor
Ohmic contact, and the structure comprises only single-layer metal alloy, and without the need for the MULTIPLE COMPOSITE structure in conventional art, technique is more
Simply, not only increase the light emission rate of LED chip, and reduce the manufacturing cost of LED chip, simplify the system of chip electrode
Make process.
The flip LED chips electrode of the present invention, is metal-doped thin film, and the main body of metal-doped thin film is with high reflection
The metal Ag or Al material of rate, doping metals are the metal with high work function, and the atomic ratio of doping is 1% ~ 10%.
The thickness of metal-doped thin film is 100 ~ 150nm.
The doping metals be Ni, Au, Pt, Pd, Rh or Ir etc. other there is the metal of high work function.
The material of main part Ag or Al of metal-doped thin film is high-reflectivity metal, the reflectance of Al in the visible-range
For 88%, and the reflectance of Ag is up to 97%；Institute's doping metals material can be the metals such as Au, Pt, Pd, Rh, Ir of high work function,
W metal, the work function of Au, Pt, Pd, Rh, Ir are respectively 5.15eV, 5.1eV, 5.65eV, 5.12eV, 4.98eV, 5.27eV,
The work function of these metal materials and the work function of p-GaN（7.5eV）Difference is less, therefore the high-work-function metal material that adulterates
High-reflectivity metal layer can realize higher reflectance and good Ohmic contact simultaneously.
The preparation method of the flip LED chips containing electrode of the present invention, comprises the steps：
（1）Epitaxial wafer after cleaning is put in cosputtering plating membrane cavity；
（2）Base metal target and doping metals target are sputtered simultaneously, and the metal-doped thin of 100 ~ 150nm is deposited on epitaxial wafer
Film；It is 1% ~ 10% that doping ratio is controlled by controlling sputtering power, controls the deposition of thick of thin film by controlling sputtering time
Degree；
（3）The epitaxial wafer for having deposited is taken out, etching step using the method for inductive ion etching makes N-type semiconductor sudden and violent
Expose；
（4）P-type pad is deposited with metal-doped thin layer, N-type pad is deposited with N-type semiconductor.
The beneficial effects of the present invention is：Compared with traditional flip chip electrode, the flip LED chips electrode not only has
There is high reflectance, and good Ohmic contact can be formed with P-type semiconductor, single-layer metal alloy instead of traditional Europe simultaneously
Nurse contacts transition zone and reflection layer structure, improves the light emission rate of LED chip, simplifies the structure of LED core plate electrode.
Description of the drawings
Fig. 1 is the structure chart of flip-chip in the embodiment of the present invention.
Fig. 2 is the structure chart of metal-doped thin layer.
Fig. 3 is the processing technique schematic diagram of metal-doped thin layer.
1 substrate, 2 N-type semiconductors, 3 p-type pads, 4 multiple quantum well light emitting layers, 5 P-type semiconductors, 6 gold medals
Category doping film electrode, 7 sputter guns, 8 Ni targets, 9 Ag targets, 10 metal-doped thin film, 11 epitaxial wafers, 12
Cosputtering plating membrane cavity, 13 N-type pads, 14 Ag-Ni alloy firms, 15 Ag atoms, 16 Ni atoms.
Specific embodiment
Referring to the drawings the specific embodiment of the present invention is described in detail.
The chip electrode of the present invention is disposed on flip LED chips, and with reference to Fig. 1, the structure of the flip-chip is：Lining
Bottom 1, the N-type semiconductor 2 being arranged under substrate, the multiple quantum well light emitting layer 4 being arranged under N-type semiconductor and N-type pad 13, set
The P-type semiconductor 5 that is placed under multiple quantum well light emitting layer, metal-doped membrane electrode 6 is placed under P-type semiconductor, p-type pad 3 is put
Under metal-doped membrane electrode.
, with reference to Fig. 3, its specific implementation step is as follows for a kind of preparation method of flip LED chips：
(1) epitaxial wafer 11 is put in plating membrane cavity 12 after cleaning；
(2) respectively Ni targets 8 that purity is 99.99% and Ag targets 9 are mounted on the backboard of two sputter guns 7；
(3) plating membrane cavity is pumped into into 2.5 × 10-3The vacuum chamber of Pa, is passed through highly purified noble gases Ar（99.999%）；
(4) while sputtering Ag targets and Ni targets, the sedimentation rate of control sputtering Ag targets is about 18nm/min；Ni targets it is heavy
Product speed is about 1.5nm/min；
(5), with reference to the structure chart of the metal-doped thin film of Fig. 2, during cosputtering, Ag atoms 15 and Ni atoms 16 interpenetrate shape
Into Ag-Ni alloy firms 16, the wherein doping rate of W metal atom is 1% ~ 10%；
(6) with reference to Fig. 3, two targets under different capacity, are sputtered simultaneously, on epitaxial wafer 11, deposited metal doped alloys thin film 10, splashes
It is 100 ~ 150nmAg-Ni alloy films to penetrate 5 ~ 8min and form thickness；
(7) epitaxial wafer for having deposited is taken out, etching step using the method for inductive ion etching makes N-type semiconductor sudden and violent
Expose；
(8) p-type pad is deposited with metal-doped thin layer, N-type pad is deposited with N-type semiconductor；
(9) reflectance of the metal-doped thin layer is tested, in the bluish-green optical band of 480nm ~ 520nm, the metal-doped thin film
The reflectance of layer is 80% ~ 90%, with high reflectance.
Above example is the preferred embodiments of the present invention, the invention is not restricted to above-described embodiment, common for this area
For technical staff, any obvious change done on the basis of without departing substantially from the technology of the present invention principle belongs to this
The protection domain of invention.
Claims (4)
1. a kind of flip LED chips electrode, it is characterised in that for metal-doped thin film, the main body of metal-doped thin film be with
The metal Ag or Al material of high reflectance, doping metals are the metal with high work function, and the atomic ratio of doping is 1% ~ 10%.
2. flip LED chips electrode according to claim 1, it is characterised in that the thickness of metal-doped thin film is 100 ~
150nm。
3. flip LED chips electrode according to claim 1, it is characterised in that the doping metals be Ni, Au, Pt,
Pd, Rh or Ir.
4. the preparation method of the flip LED chips containing electrode described in claim 1, it is characterised in that comprise the steps：
（1）Epitaxial wafer after cleaning is put in cosputtering plating membrane cavity；
（2）Base metal target and doping metals target are sputtered simultaneously, and the metal-doped thin of 100 ~ 150nm is deposited on epitaxial wafer
Film；It is 1% ~ 10% that doping ratio is controlled by controlling sputtering power, controls the deposition of thick of thin film by controlling sputtering time
Degree；
（3）The epitaxial wafer for having deposited is taken out, etching step using the method for inductive ion etching makes N-type semiconductor sudden and violent
Expose；
（4）P-type pad is deposited with metal-doped thin layer, N-type pad is deposited with N-type semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610954442.9A CN106531863A (en) | 2016-11-03 | 2016-11-03 | Upside-down mounting LED chip electrode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610954442.9A CN106531863A (en) | 2016-11-03 | 2016-11-03 | Upside-down mounting LED chip electrode and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106531863A true CN106531863A (en) | 2017-03-22 |
Family
ID=58325645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610954442.9A Pending CN106531863A (en) | 2016-11-03 | 2016-11-03 | Upside-down mounting LED chip electrode and preparation method thereof |
Country Status (1)
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107123594A (en) * | 2017-05-10 | 2017-09-01 | 湘能华磊光电股份有限公司 | LED electrode preparation method, LED electrode and LED chip |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006011672A1 (en) * | 2004-07-29 | 2006-02-02 | Showa Denko K.K. | Positive electrode for semiconductor light-emitting device |
| CN101351898A (en) * | 2005-12-27 | 2009-01-21 | 三星电子株式会社 | Group-III nitride-based light emitting device |
| CN102598320A (en) * | 2010-04-02 | 2012-07-18 | 松下电器产业株式会社 | Nitride semiconductor element and manufacturing method therefor |
| CN204179102U (en) * | 2014-10-11 | 2015-02-25 | 晶科电子（广州）有限公司 | A kind of flip LED chips of high reliability and LED component thereof |
| CN104659178A (en) * | 2015-03-09 | 2015-05-27 | 武汉大学 | Power type three-dimensional LED light-emitting device and manufacturing method thereof |
-
2016
- 2016-11-03 CN CN201610954442.9A patent/CN106531863A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006011672A1 (en) * | 2004-07-29 | 2006-02-02 | Showa Denko K.K. | Positive electrode for semiconductor light-emitting device |
| CN101351898A (en) * | 2005-12-27 | 2009-01-21 | 三星电子株式会社 | Group-III nitride-based light emitting device |
| CN102598320A (en) * | 2010-04-02 | 2012-07-18 | 松下电器产业株式会社 | Nitride semiconductor element and manufacturing method therefor |
| CN204179102U (en) * | 2014-10-11 | 2015-02-25 | 晶科电子（广州）有限公司 | A kind of flip LED chips of high reliability and LED component thereof |
| CN104659178A (en) * | 2015-03-09 | 2015-05-27 | 武汉大学 | Power type three-dimensional LED light-emitting device and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107123594A (en) * | 2017-05-10 | 2017-09-01 | 湘能华磊光电股份有限公司 | LED electrode preparation method, LED electrode and LED chip |
| CN107123594B (en) * | 2017-05-10 | 2019-11-26 | 湘能华磊光电股份有限公司 | LED electrode production method, LED electrode and LED chip |
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Application publication date: 20170322 |