CN106531759B - Display device - Google Patents
Display device Download PDFInfo
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- CN106531759B CN106531759B CN201610390544.2A CN201610390544A CN106531759B CN 106531759 B CN106531759 B CN 106531759B CN 201610390544 A CN201610390544 A CN 201610390544A CN 106531759 B CN106531759 B CN 106531759B
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- light
- transistor
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- electrode
- emitting diode
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
Abstract
The present invention discloses a kind of display device, including multiple transistors；And light-emitting diode chip for backlight unit, corresponding at least two transistors setting.
Description
Technical field
The present invention relates to display devices, and more particularly to a kind of display device with light-emitting diode chip for backlight unit.
Background technique
With the development of digital technology, display device has been widely used in the every aspect of daily life, such as
It is widely used to the modernization information equipment such as TV, notebook, computer, mobile phone, Smartphone, and this display dress
It sets and constantly develops towards light, thin, short and small and fashion-orientation direction.And this display device includes light emitting display device.
Light emitting diode (LEDs) be using the electron-hole pair in p-n junction in conjunction with (recombination) come
It generates electromagnetic radiation (such as light).In the direct band gap material (direct band gap material) of such as GaAs or GaN
In the P-N junction of the forward bias voltage drop of formation, inject exhaustion region in electron-hole pair in conjunction with generate electromagnetic radiation.It is above-mentioned
Electromagnetic radiation can be located at visible region or non-visible light area, and the material with different band gap will form luminous the two of different colours
Pole pipe.
In the case where light emitting display device industry is all strided forward towards the trend of mass production now, any luminous two
The reduction of the production cost of pole pipe display device can all bring huge economic benefit.However, current display device is not each
Aspect is all satisfactory.
Therefore, industry still a kind of can must further reduce the display device of manufacturing cost.
Summary of the invention
It includes: multiple transistors that the present invention, which provides a kind of display device,；And light-emitting diode chip for backlight unit, corresponding at least two
Transistor setting.
For feature and advantage of the invention can be clearer and more comprehensible, preferred embodiment is cited below particularly out, and cooperate appended attached
Figure, is described in detail below.
Detailed description of the invention
Figure 1A is the top view of the display device of the embodiment of the present invention；
Figure 1B is the enlarged drawing of the region 1B of the display device of Figure 1A；
Fig. 1 C is the cross-sectional view drawn along the line segment 1C-1C of Figure 1B；
Fig. 1 D is the cross-sectional view of the display device of another embodiment of the present invention；
Fig. 1 E is the cross-sectional view of the display device of another embodiment of the present invention；
Fig. 1 F is the cross-sectional view of the display device of another embodiment of the present invention；
Fig. 1 G is the cross-sectional view of the display device of another embodiment of the present invention；
Fig. 1 H is the cross-sectional view of the display device of another embodiment of the present invention；
Fig. 1 I is the cross-sectional view of the display device of another embodiment of the present invention；
Fig. 1 J is the cross-sectional view of the display device of another embodiment of the present invention；
Fig. 2A is the top view of the display device of another embodiment of the present invention；
Fig. 2 B is the cross-sectional view drawn along the line segment 2B-2B of Fig. 2A；
Fig. 3 is the aobvious of three kinds of possible aspects of the invention to the corresponding number of transistors of light-emitting diode chip for backlight unit enumerated
The top view of showing device；
Fig. 4 A is the top view of the display device of another embodiment of the present invention；
Fig. 4 B is the top view of the display device of another embodiment of the present invention；
Fig. 5 A is the top view of the display device of another embodiment of the present invention；
Fig. 5 B is the top view of the display device of another embodiment of the present invention；
Fig. 6 A is the local top view of the display device of another embodiment of the present invention；
Fig. 6 B is the local top view of the display device of another embodiment of the present invention；
Fig. 6 C is the local top view of the display device of another embodiment of the present invention；
Fig. 6 D is the local top view of the display device of another embodiment of the present invention；
Fig. 6 E is the cross-sectional view drawn along the line segment 6E-6E of Fig. 6 D；
Fig. 6 F is the exploded view of the light-emitting diode chip for backlight unit and first substrate along the embodiment of Fig. 6 D；
Fig. 7 A is the local top view of the display device of another embodiment of the present invention；
Fig. 7 B is the local top view of the display device of another embodiment of the present invention；
Fig. 7 C is the local top view of the display device of another embodiment of the present invention；
Fig. 7 D is the local top view of the display device of another embodiment of the present invention；
Fig. 8 A is the local top view of the display device of another embodiment of the present invention；
Fig. 8 B is the local top view of the display device of another embodiment of the present invention；
Fig. 8 C is the local top view of the display device of another embodiment of the present invention；
Fig. 8 D is the local top view of the display device of another embodiment of the present invention；
Fig. 9 A is the local top view of the display device of another embodiment of the present invention；
Fig. 9 B is the local top view of the display device of another embodiment of the present invention；
Fig. 9 C is the local top view of the display device of another embodiment of the present invention；
Fig. 9 D is the local top view of the display device of another embodiment of the present invention；
Figure 10 A is the local top view of the display device of another embodiment of the present invention；
Figure 10 B is the local top view of the display device of another embodiment of the present invention；
Figure 10 C is the local top view of the display device of another embodiment of the present invention；
Figure 10 D is the local top view of the display device of another embodiment of the present invention；
Figure 11 A is the local top view of the display device of another embodiment of the present invention；
Figure 11 B is the local top view of the display device of another embodiment of the present invention；
Figure 11 C is the local top view of the display device of another embodiment of the present invention；
Figure 11 D is the local top view of the display device of another embodiment of the present invention；
Figure 11 E is the local top view of the display device of another embodiment of the present invention；
Figure 12 A is the light-emitting diode chip for backlight unit of another embodiment of the present invention and the cross-sectional view of substrate；
Figure 12 B is the lower view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 13 A is the light-emitting diode chip for backlight unit of another embodiment of the present invention and the cross-sectional view of substrate；
Figure 13 B is the lower view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 14 A is the light-emitting diode chip for backlight unit of another embodiment of the present invention and the cross-sectional view of substrate；
Figure 14 B is the lower view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 15 A is the light-emitting diode chip for backlight unit of another embodiment of the present invention and the cross-sectional view of substrate；
Figure 15 B is the lower view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 16 A is the light-emitting diode chip for backlight unit of another embodiment of the present invention and the cross-sectional view of substrate；
Figure 16 B is the lower view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 17 A is the light-emitting diode chip for backlight unit of another embodiment of the present invention and the cross-sectional view of substrate；
Figure 17 B is the lower view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 18 A is the light-emitting diode chip for backlight unit of another embodiment of the present invention and the cross-sectional view of substrate；
Figure 18 B is the lower view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 19 A is the light-emitting diode chip for backlight unit of another embodiment of the present invention and the cross-sectional view of substrate；
Figure 19 B is the lower view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 20 A is the light-emitting diode chip for backlight unit of another embodiment of the present invention and the cross-sectional view of substrate；
Figure 20 B is the lower view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 21 A is the light-emitting diode chip for backlight unit of another embodiment of the present invention and the cross-sectional view of substrate；
Figure 21 B is the lower view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 22 is the side view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 23 is the side view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 24 A is the top view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 24 B is the top view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 24 C is the top view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 24 D is the top view of the light-emitting diode chip for backlight unit of another embodiment of the present invention.
Figure 25 A is the top view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 25 B is the top view of the light-emitting diode chip for backlight unit of another embodiment of the present invention.
Symbol description
100 display devices；
102 viewing areas；
104 non-display areas；
106 external pins bonding pads；
110 light-emitting diode chip for backlight unit；
112 electrodes；
114 first substrates；
116 transistors；
116A transistor；
116B transistor；
116C transistor；
118 gate electrodes；
120 gate dielectrics；
122 semiconductor layers；
124 source electrodes；
126 drain electrodes；
128 connection electrodes；
130 the second substrates；
On front side of 130S1；
130S2 back side；
132 luminescence units；
132A luminescence unit；
132B luminescence unit；
132C luminescence unit；
132D luminescence unit；
132E luminescence unit；
132F luminescence unit；
134 first electrodes；
136 chromatic filter layers；
136A blue color filter layer；
136B red filter layer；
136C green color filter；
138 fluorescence coatings；
146 quantum dot films；
The first quantum dot film of 146A；
The second quantum dot film of 146B；
146C third quantum dot film；
148 photoluminescent layers；
The first photoluminescent layers of 148A；
The second photoluminescent layers of 148B；
148C third photoluminescent layers；
200 display devices；
210 light-emitting diode chip for backlight unit；
212 third electrodes；
216 transistors；
216A, 216B, 216C, 216D, 216E, 216F transistor；
228 connection electrodes；
232 luminescence units；
234 first electrodes；
238 second electrodes；
310 light-emitting diode chip for backlight unit；
310A light-emitting diode chip for backlight unit；
310B light-emitting diode chip for backlight unit；
310C light-emitting diode chip for backlight unit；
316 transistors；
400A display device；
410A light-emitting diode chip for backlight unit；
412 column common electrodes；
416 transistors；
432 luminescence units；
440A the first transistor column；
440B second transistor column；
442A the first transistor row；
442B second transistor row；
The first data line of 444A；
The second data line of 444B；
446A first grid polar curve；
446B second gate line；
448 row common electrodes；
500A display device；
500B display device；
516 transistors；
510A light-emitting diode chip for backlight unit；
510B light-emitting diode chip for backlight unit；
540A the first transistor column；
540B second transistor column；
600A display device；
610A light-emitting diode chip for backlight unit；
610B light-emitting diode chip for backlight unit；
614 first substrates；
616A transistor；
616B transistor；
628A connection electrode；
628B connection electrode；
632A luminescence unit；
632B luminescence unit；
632C luminescence unit；
632D luminescence unit；
634A first electrode；
634B first electrode；
636 chromatic filter layers；
638 second electrodes；
646 grid lines；
648A data line；
648B data line；
650 row common electrodes；
652A light shield layer；
652B light shield layer；
700A display device；
710A light-emitting diode chip for backlight unit；
710B light-emitting diode chip for backlight unit；
716A transistor；
716B transistor；
716C transistor；
716D transistor；
726A connection electrode；
726B connection electrode；
726C connection electrode；
726D connection electrode；
732A luminescence unit；
732B luminescence unit；
732C luminescence unit；
732D luminescence unit；
746A grid line；
746B grid line；
748A data line；
748B data line；
750 row common electrodes；
800A display device；
810A light-emitting diode chip for backlight unit；
810B light-emitting diode chip for backlight unit；
816A transistor；
816B transistor；
826A connection electrode；
826B connection electrode；
832A luminescence unit；
832B luminescence unit；
846A grid line；
846B grid line；
848 data lines；
854 column common electrodes；
900A display device；
910A light-emitting diode chip for backlight unit；
910B light-emitting diode chip for backlight unit；
916A transistor；
916B transistor；
916C transistor；
916D transistor；
926A connection electrode；
926B connection electrode；
926C connection electrode；
926D connection electrode；
932A luminescence unit；
932B luminescence unit；
932C luminescence unit；
932D luminescence unit；
946A grid line；
946B grid line；
948A data line；
948B data line；
954 column common electrodes；
1000A display device；
1010A light-emitting diode chip for backlight unit；
1010B light-emitting diode chip for backlight unit；
1016A transistor；
1016B transistor；
1016C transistor；
1016D transistor；
1026A connection electrode；
1026B connection electrode；
1026C connection electrode；
1026D connection electrode；
1032A luminescence unit；
1032B luminescence unit；
1032C luminescence unit；
1032D luminescence unit；
1046A grid line；
1046B grid line；
1048A data line；
1048B data line；
1050 row common electrodes；
1054 column common electrodes；
1100A display device；
1110A light-emitting diode chip for backlight unit；
1110B light-emitting diode chip for backlight unit；
1116A transistor；
1116B transistor；
1116C transistor；
1116D transistor；
1126B connection electrode；
1126C connection electrode；
1146 grid lines；
1148A data line；
1148B data line；
1148C data line；
1148D data line；
1150 row common electrodes；
The first side S1；
S2 second side；
The first side S3；
S4 second side；
The first side S5；
S6 second side；
S7 third side；
The 4th side S8；
The region 1B；
1C-1C line segment；
2B-2B line segment；
6E-6E line segment；
The direction A1；
The direction A2；
1210 light-emitting diode chip for backlight unit；
1232A luminescence unit；
1232B luminescence unit；
1232C luminescence unit；
The upper surface 1232S1；
The lower surface 1232S2；
12A1 electrode；
12A2 electrode；
12B1 electrode；
12B2 electrode；
12C1 electrode；
12C2 electrode；
SB substrate；
1310 light-emitting diode chip for backlight unit；
1332A luminescence unit；
1332B luminescence unit；
1332C luminescence unit
13A1 electrode；
13B1 electrode；
13C1 electrode；
13E electrode；
1410 light-emitting diode chip for backlight unit；
1432A luminescence unit；
1432B luminescence unit；
1432C luminescence unit；
1432D luminescence unit；
The lower surface 1432S2；
14A1 electrode；
14A2 electrode；
14B1 electrode；
14B2 electrode；
14C1 electrode；
14C2 electrode；14D1 electrode；
14D2 electrode；
1510 light-emitting diode chip for backlight unit；
1532A luminescence unit；
1532B luminescence unit；
1532C luminescence unit；
1532D luminescence unit；
The upper surface 1532S1；
The lower surface 1532S2；
15A1 electrode；
15B1 electrode；
15C1 electrode；
15D1 electrode；
15E electrode；
1610 light-emitting diode chip for backlight unit；
1632A luminescence unit；
1632B luminescence unit；
16A1 electrode；
16B1 electrode；
16E electrode；
1710 light-emitting diode chip for backlight unit；
1732A luminescence unit；
1732B luminescence unit；
1732C luminescence unit；
The upper surface 1732S1；
1738 wavelength conversion material layers；
17A1 electrode；
17B1 electrode；
17C1 electrode；
17E electrode；1810 light-emitting diode chip for backlight unit；
1832A luminescence unit；
1832B luminescence unit；
1832C luminescence unit；
1838B wavelength conversion material layer；
1838C wavelength conversion material layer；
18A1 electrode；
18B1 electrode；
18C1 electrode；
18E electrode；
1910 light-emitting diode chip for backlight unit；
1932A luminescence unit；
1932B luminescence unit；
1932C luminescence unit；
The upper surface 1932S1；
The lower surface 1932S2；
19A1 electrode；
19A2 electrode；
19B1 electrode；
19B2 electrode；
19C1 electrode；
19C2 electrode；
2010 light-emitting diode chip for backlight unit；
2032A luminescence unit；
2032B luminescence unit；
2032C luminescence unit；
The upper surface 2032S1；
The lower surface 2032S2；
20A1 electrode；
20B1 electrode；
20C1 electrode；
20E electrode；
2110 light-emitting diode chip for backlight unit；
2132A luminescence unit；
2132B luminescence unit；
The upper surface 2132S1；
The lower surface 2132S2；
21A1 electrode；
21B1 electrode；
21E electrode；
2210 light-emitting diode chip for backlight unit；
2232A luminescence unit；
2232B luminescence unit；
2232C luminescence unit；
2232D luminescence unit；
The upper surface 2232S1；
The lower surface 2232S2；
22A1 electrode；
22B1 electrode；
22C1 electrode；
22D1 electrode；
22E electrode；
2310 light-emitting diode chip for backlight unit；
2332A luminescence unit；
2332B luminescence unit；
2332C luminescence unit；
2332D luminescence unit；
The upper surface 2332S1；
The lower surface 2332S2；
23A1 electrode；
23A2 electrode；
23B1 electrode；
23B2 electrode；
23C1 electrode；
23C2 electrode；
23D1 electrode；
23D2 electrode；
2410A light-emitting diode chip for backlight unit；
2410B light-emitting diode chip for backlight unit；
2410C light-emitting diode chip for backlight unit；
2410D light-emitting diode chip for backlight unit；
2432A luminescence unit；
2432B luminescence unit；
2432C luminescence unit；
2510A light-emitting diode chip for backlight unit；
2510B light-emitting diode chip for backlight unit；
2532A luminescence unit；
2532B luminescence unit；
2532C luminescence unit.
Specific embodiment
It elaborates below for display device of the invention.It is to be understood that narration below provides many differences
Embodiment or example, to implement different patterns of the invention.Specific element and arrangement mode as described below are only simple
Clearly describe the present invention.Certainly, these are only to illustrate and the restriction of non-present invention.In addition, may make in different embodiments
With duplicate label or mark.These repeat not representing discussed different implementations only for simply clearly narration is of the invention
There is any association between example and/or structure.Furthermore when address a first material layer be located in a second material layer or on
When, the situation that is directly contacted including first material layer with second material layer.Alternatively, may also between be separated with one or more other materials
The situation of layer may be not directly contacted between first material layer and second material layer in this case.
It will be appreciated that the element or device of attached drawing can exist with various forms known to this skilled worker.In addition,
When certain layer is in other layers or substrate "upper", it is possible to refer to that " direct " on other layers or substrate, or refers to certain layer in other layers
Or on substrate, or refer to the other layers of sandwiched between other layers or substrate.
In addition, the term of relativity, such as " lower " or " bottom " and " higher " or " top " may be used in embodiment,
To describe relativeness of the element for another element of attached drawing.It is appreciated that, if the device overturning of attached drawing made
It turns upside down, then the element described in " lower " side will be as the element in " higher " side.
Here, " about ", " about ", " on the whole " term be generally represented within the 20% of a given value or range, preferably
It is within 10%, and is more preferably within 5% or within 3% or within 2% or within 1% or within 0.5%.It gives herein
Quantity be quantity about, that is, in the case where no certain illustrated " about ", " about ", " on the whole ", can still imply "
About ", " about ", the meaning of " on the whole ".
It is appreciated that, although term " first ", " second ", " third " etc. can be used herein to describe various elements, group
At ingredient, region, layer and/or part, these elements, constituent, region, layer and/or part should not be limited by these terms
It is fixed, and these terms are intended merely to distinguish different elements, constituent, region, layer and/or part.Therefore, following discussion
A first element, constituent, region, layer and/or part can without departing from teachings of the present invention be referred to as one
Second element, constituent, region, layer and/or part.
Unless otherwise defined, belonging to whole term (including technology and scientific words) as used herein has and discloses with this piece
The normally understood identical connotation of general technology person institute.It is appreciated that these terms, such as determines in usually used dictionary
The term of justice should be interpreted to have one and the relevant technologies and background of the invention or the consistent meaning of context, without should be with
One idealization or excessively formal mode are interpreted, unless especially definition herein.
The embodiment of the present invention can cooperate attached drawing to understand together, and attached drawing of the invention is also regarded as a part for disclosing explanation.
It is to be understood that attached drawing of the invention is not with actual device and the scale of element.Embodiment may be exaggerated in the accompanying drawings
Shape and thickness clearly to show feature of the invention.In addition, the structure and device in attached drawing are drawn in a schematic manner
Show, clearly to show feature of the invention.
In the present invention, the term of relativity such as "lower", "upper", "horizontal", " vertical ", " under ", " on ", " top
Portion ", " bottom " etc. should be understood orientation depicted in this section and relevant drawings.The term of this relativity merely to
Facilitate purposes of discussion, not representing device that it is described need to be manufactured or be operated with particular orientation.And about engagement, connection
Term such as " connection ", " interconnection " etc., unless defined, otherwise can refer to two structures and directly contact, or also can refer to two
A structure and non-direct contact, wherein there is other structures to be set between this two structures.And this term about engagement, connection
It may include all removable or all fixed two structures situation of two structures.
It should be noted that " substrate " word may include the established element of semiconductor die on piece and be covered on crystalline substance below
The various film layers of on piece, side can form any desired semiconductor element thereon, but here for attached drawing is simplified, only with
Smooth substrate indicates it.In addition, " substrate surface " includes the film layer of semiconductor die on piece the top and exposure, such as a silicon table
Face, an insulating layer and/or metal wire.
The embodiment of the present invention makes the corresponding at least two transistors setting of the light-emitting diode chip for backlight unit in display device, to reduce
The quantity of light-emitting diode chip for backlight unit used in display device.Therefore it can reduce and be bonded light-emitting diode chip for backlight unit in manufacture craft
Number, therefore manufacture craft time and manufacture craft cost can be reduced, and promote yield.
It is the top view of the display device 100 of the embodiment of the present invention referring to Figure 1A-Figure 1B, Figure 1A, and Figure 1B is Figure 1A
The enlarged drawing of the region 1B of display device 100.As shown in Figure 1A, display device 100 includes viewing area 102 and adjacent display areas
102 non-display area 104.In this embodiment, non-display area 104 surrounds viewing area 102.This viewing area 102 refers to display device
The display area of transistor is equipped in 100.More broadly says, viewing area 102 refers to that display device 100 deducts non-display area
Part, and this transistor may be, for example, thin film transistor (TFT).In addition, this non-display area 104 may include an external pins bonding pad
(Out Lead Bonding, OLB) 106.
Referring to Figure 1A-Figure 1B, display device 100 can be a light emitting display device.This display device 100 includes more
A transistor 116 and the light-emitting diode chip for backlight unit 110 of corresponding at least two transistors 116 setting are in the embodiment of the present invention
The light-emitting diode chip for backlight unit 110 of corresponding three transistors (such as 116A, 116B or 116C) setting.Display device 100 further includes
Community electrode 112.
The embodiment of the present invention makes the corresponding three transistors setting of a light-emitting diode chip for backlight unit in display device, to reduce
Then time of light-emitting diode chip for backlight unit in the quantity and manufacture craft of light-emitting diode chip for backlight unit used in display device
Number, therefore manufacture craft cost and manufacture craft time can be reduced, and promote yield.
Fig. 1 C is the cross-sectional view drawn along the line segment 1C-1C of Figure 1B.Referring to Fig. 1 C, display device 100 includes first
Substrate 114, this first substrate 114 can be a transistor base.This can be transparent for one as the first substrate 114 of transistor base
Substrate, material may be, for example, glass substrate, ceramic substrate, plastic substrate or other any suitable transparent substrates.In addition, the
It is equipped on one substrate 114 to control the luminous transistor 116 of light-emitting diode chip for backlight unit 110, such as thin film transistor (TFT).
The form of transistor 116 can be lower grid or upper grid.Specifically, referring to Fig. 1 C, the crystal of lower gate form
Pipe 116 may include gate electrode 118, gate dielectric 120, semiconductor layer 122, source electrode 124 and drain electrode 126.This
Gate electrode 118 is set on first substrate 114, and this gate dielectric 120 is covered in this gate electrode 118 and first substrate
On 114, this semiconductor layer 122 is set on this gate dielectric 120, and the corresponding gate electrode 118 setting.This source electrode
124 are set on semiconductor layer 122, and Chong Die with part of semiconductor layer 122.This drain electrode 126 is also set to semiconductor layer 122
On, and it is Chong Die with another part semiconductor layer 122.It is ripe for those skilled in the art as the transistor 116 of upper gate form
Know, its structure that so it will not be repeated.
The material of gate electrode 118 may include copper, aluminium, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, above-mentioned alloy, on
The good metal material of the combination or other electric conductivity stated.In other embodiments, the material of above-mentioned gate electrode 118 can be non-for one
Metal material, only material to be used is conductive.Gate electrode 118 may be electrically connected to grid line.
Gate dielectric 120 can be silica, silicon nitride, silicon oxynitride, silicomethane, high dielectric constant (high-k) dielectric
Material or other any suitable dielectric materials or combinations of the above.The material of this high dielectric constant (high-k) dielectric material
It can be metal oxide, metal nitride, metal silicide, transition metal oxide, transition metal nitride, transition metal silicon
Compound, the nitrogen oxides of metal, metal aluminate, zirconium silicate, zircoaluminate.For example, this high dielectric constant (high-k) is situated between
Electric material can be LaO, AlO, ZrO, TiO, Ta2O5、Y2O3、SrTiO3(STO)、BaTiO3(BTO)、BaZrO、HfO2、HfO3、
HfZrO、HfLaO、HfSiO、HfSiON、LaSiO、AlSiO、HfTaO、HfTiO、HfTaTiO、HfAlON、(Ba,Sr)TiO3
(BST)、Al2O3, other suitable materials other high-k dielectric materials or said combination.This dielectric materials layer can pass through
Chemical vapour deposition technique (CVD) or method of spin coating are formed, this chemical vapour deposition technique may be, for example, low-pressure chemical vapor deposition
Method (lowpressure chemical vapor deposition, LPCVD), low temperature chemical vapor deposition method
(lowtemperature chemical vapor deposition, LTCVD), be rapidly heated chemical vapour deposition technique (rapid
Thermal chemical vapor deposition, RTCVD), plasma auxiliary chemical vapor deposition method (plasma
Enhanced chemical vapor deposition, PECVD), the atomic layer deposition method of atomic layer chemical vapor deposition method
(atomic layer deposition, ALD) or other common methods.
Semiconductor layer 122 may include can be for elemental semiconductor, including amorphous silicon (amorphous-Si), polysilicon (poly-
Si), germanium (germanium)；Compound semiconductor, including gallium nitride (gallium nitride, GaN), silicon carbide (silicon
Carbide), GaAs (gallium arsenide), gallium phosphide (gallium phosphide), indium phosphide (indium
Phosphide), indium arsenide (indium arsenide) and/or indium antimonide (indium antimonide)；Alloy semiconductor,
Including sige alloy (SiGe), phosphorus arsenic gallium alloy (GaAsP), arsenic aluminium indium alloy (AlInAs), arsenic aluminum gallium alloy (AlGaAs), arsenic
Indium gallium alloy (GaInAs), phosphorus indium gallium alloy (GaInP) and/or phosphorus arsenic indium gallium alloy (GaInAsP)；Metal oxide, including
Indium gallium zinc (IGZO), indium zinc oxide (IZO), indium gallium tin zinc (IGZTO)；Organic semiconductor, including polycyclic aromatic
Close the combination of object or above-mentioned material.
The material of source electrode 124 and drain electrode 126 may include copper, aluminium, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, on
The good metal material of alloy, combinations of the above or the other electric conductivity stated.In other embodiments, above-mentioned 124 He of source electrode
The material of drain electrode 126 can be a nonmetallic materials, and only material to be used is conductive.Source electrode 124 can
It is electrically connected to a data line.
Transistor 116 can further include the connection electrode 128 on first substrate 114, this connection electrode 128 is electrically connected to
Drain electrode 126.In addition, drain electrode 126 can also be used directly as connection electrode 128, can so be not required in addition make
Connection electrode 128.
This connection electrode 128 include any conductive material, for example, copper, aluminium, tungsten, gold, chromium, nickel, platinum, titanium, iridium,
Rhodium, above-mentioned alloy or indium tin oxide (ITO) tin oxide (TO), indium zinc oxide (IZO), indium gallium zinc (IGZO), oxidation
Indium tin zinc (ITZO), antimony tin (ATO), antimony oxide zinc (AZO), combinations of the above or other any suitable electrically conducting transparent oxygen
Compound material.
Display device 100 further includes the second substrate 130 being oppositely arranged with this first substrate 114.This second substrate 130 can
Including glass substrate, ceramic substrate, plastic substrate or other any suitable transparent substrates.In addition, light-emitting diode chip for backlight unit 110
There is a gap between the second substrate 130, this gap is by the spacer that is set in viewing area 102, or is set to non-aobvious
Caused by the spacer for showing area 104, this spacer can prevent light-emitting diode chip for backlight unit 110 from connecing when display device 100 is pressed
It touches the second substrate 130 and damages.It discloses in embodiment herein, the material of the spacer is photosensitive organic material.
In addition, the light-emitting diode chip for backlight unit 110 of this display device 100 is set to above-mentioned first substrate 114 and the second substrate 130
Between.This light-emitting diode chip for backlight unit 110 includes multiple luminescence units 132.Luminescence unit 132 may include ultraviolet light-emitting diodes
Luminescence unit, blue light-emitting diode luminescence unit, green light LED luminescence unit, red light-emitting diode luminescence unit
Or other any suitable LED units.
In the embodiment shown in Figure 1B-Fig. 1 C, light-emitting diode chip for backlight unit 110 includes three luminescence units 132A, 132B
And 132C, it is electrically connected three transistors 116A, 116B and 116C.Luminescence unit 132A is electrically connected by a first electrode 134
It is connected to connection electrode 128, and common electrode 112 is electrically connected to by a second electrode.This common electrode 112 includes any leads
The material of electricity, for example, copper, aluminium, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, above-mentioned alloy or indium tin oxide (ITO) oxidation
Tin (TO), indium zinc oxide (IZO), indium gallium zinc (IGZO), indium tin zinc oxide (ITZO), antimony tin (ATO), antimony oxide zinc
(AZO), combinations of the above or other any suitable transparent conductive oxide materials.
In addition, electric current flows into luminescence unit 132A via transistor 116A and first electrode 134, and flowed out by second electrode
Thus luminescence unit 132A allows luminescence unit 132A to shine.In embodiments of the present invention, the material of luminescence unit can for it is any
Know or electroluminescent material possible in theory, such as inorganic light-emitting diode or Organic Light Emitting Diode.
In addition, light-emitting diode chip for backlight unit 110 is corresponded to multiple transistors 116 and is set in the embodiment shown in Figure 1B-Fig. 1 C
It sets, and this light-emitting diode chip for backlight unit 110 includes that two luminescence units for issuing different colours respectively shine single in the present invention
The capable of emitting color of member is not restricted to red green blue tricolor, other can theoretically or actually be generated by electroluminescent cell
Color all may be used.For example, in some embodiments, the be electrically connected luminescence unit 132A of transistor 116A issues blue light, transistor
The luminescence unit 132B that 116B is electrically connected issues feux rouges, and the luminescence unit 132C that transistor 116C is electrically connected issues green light.
In other embodiments, three luminescence units 132A, 132B and 132C can have different from putting in order shown in Fig. 1 C.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 1 C, in the present invention, corresponding multiple transistors settings
Light-emitting diode chip for backlight unit may also comprise the luminescence unit for issuing a kind of color, as shown in the embodiment of Fig. 1 D- Fig. 1 E.Of the invention
Range is not limited with embodiment shown in Fig. 1 C.It should be noted that hereinafter with the same or similar element or film layer above
To be indicated with the same or similar label, material, manufacturing method and function all with it is described previously same or similar, so part
It will not be described in great detail below.
Fig. 1 D is the cross-sectional view of the display device of another embodiment of the present invention.Referring to Fig. 1 D, a light-emitting diode chip for backlight unit
110 corresponding multiple transistors 116 are arranged, and this light-emitting diode chip for backlight unit 110 includes the luminescence unit for issuing a kind of color.Yi Yan
It, corresponding three transistors 116A, 116B and 116C setting of the light-emitting diode chip for backlight unit 110 of Fig. 1 D, and be electrically connected this three
Luminescence unit 132D, 132E, 132F of a transistor 116A, 116B and 116C all issue the light of same color, such as feux rouges, green
Light, blue light, white light, but be not limited thereto.
In addition, in this embodiment, light-emitting diode chip for backlight unit 110 includes the luminescence unit for issuing white light, display device 100
It further include the chromatic filter layer 136 in the second substrate 130.In one embodiment, this chromatic filter layer 136 may include blue
Filter layer 136A, red filter layer 136B, green color filter 136C, respectively correspond luminescence unit 132D, 132E, 132F.
It should be noted that it is it that chromatic filter layer of the invention is also replaceable in addition to the embodiment shown in above-mentioned Fig. 1 D
His film layer, as shown in the embodiment of Fig. 1 E.The scope of the present invention is not limited with embodiment shown in Fig. 1 D.
Fig. 1 E is the cross-sectional view of the display device of another embodiment of the present invention.In this embodiment, display device 100 is also wrapped
The quantum dot film 146 being set in the second substrate 130 is included, this quantum dot film 146 includes the first quantum dot film 146A, second
Quantum dot film 146B and third quantum dot film 146C, respectively corresponds luminescence unit 132D, 132E, 132F, and luminescence unit
132D, 132E, 132F all issue the light of same color, such as wavelength is the blue light of 380~500nm.
The material of this quantum dot film 146 may include the organic layer or inorganic layer of blending quantum dot (quantum dot), this
Quantum dot be an ingredient include zinc, cadmium, selenium, sulphur, or combinations thereof nanometer three-dimensional structure.The partial size of this quantum dot is about 1nm-
10nm.By adjusting the partial size of quantum dot, can be changed quantum dot film 146 by light source (such as: wavelength is the indigo plant of 380~500nm
Light) excitation after generated light frequency spectrum.For example, blending has the first quantum dot film 146A of the quantum dot of the first partial size blue
The first color of light can be generated after light excitation, blending has the second quantum dot film 146B of the quantum dot of the second partial size to be stimulated by blue light
After can generate the second color of light, blending can produce after having the third quantum dot film 146C of the quantum dot of third partial size to be stimulated by blue light
Raw third color of light, wherein the first color of light, the second color of light are respectively provided with different frequency spectrums from third color of light.
Fig. 1 F is the cross-sectional view for disclosing the display device of another embodiment.In this embodiment, this quantum dot film 146 wraps
The second quantum dot film 146B and third quantum dot film 146C are included, luminescence unit 132E, 132F are respectively corresponded.This quantum dot is thin
Film 146 can save material cost, and luminescence unit by saving the first quantum dot film 146A of corresponding luminescence unit 132D
132D, 132E, 132F all issue the light of same color, such as wavelength is the blue light of 380~500nm.
Fig. 1 G is the cross-sectional view of the display device of another embodiment of the present invention.In this embodiment, luminescence unit 132D,
132E, 132F all issue the light of same color, such as the light of blue light, ultraviolet light or any other suitable color.Display device
100 include the chromatic filter layer 136 in the second substrate 130.In one embodiment, this chromatic filter layer 136 may include indigo plant
Color filtering optical layer 136A, red filter layer 136B, green color filter 136C, respectively correspond luminescence unit 132D, 132E, 132F.Hair
A photoluminescent layers 138 can be formed on luminous diode chip 110.And the light that luminescence unit 132D, 132E, 132F are issued passes through
White light is generated after photoluminescent layers 138, white light is the light that can produce different colours using chromatic filter layer 136.This photic hair
Photosphere 138 may include fluorescence coating, phosphorescent layer, aforementioned quantum dot film or other any suitable embedded photoluminescent materials.It is above-mentioned glimmering
The material of photosphere can be aluminate (Aluminate), silicate (Silicate), nitride (Nitride), nitrogen oxides
(Oxynitride), sulfide, halide, combinations of the above or other any suitable fluorescent materials.
In addition, the second substrate 130 has the front side 130S1 and back side 130S2 of opposite side each other.Although it is noted that
The chromatic filter layer 136 of Fig. 1 G is set to the front side 130S1 of the second substrate 130, however this chromatic filter layer 136 can also be set to second
The back side 130S2 of substrate 130.Alternatively, in other embodiments, this chromatic filter layer 136 can be set to light-emitting diode chip for backlight unit 110
To suitable position any between the back side 130S2 of the second substrate 130, and the second substrate 130 is display device 100 in going out at this time
Outermost carrier on light direction.
Fig. 1 H is the cross-sectional view for disclosing the display device of another embodiment.In this embodiment, this chromatic filter layer 136 wraps
Red filter layer 136B and green color filter 136C are included, luminescence unit 132E, 132F are respectively corresponded.This chromatic filter layer 136 can
Material cost is saved by saving the first chromatic filter layer 136A of corresponding luminescence unit 132D.This photoluminescent layers 138
Material cost can be further saved by saving the part of corresponding luminescence unit 132D.And luminescence unit 132D, 132E, 132F
All issue the light of same color, such as the light of blue light or any other suitable color.
Fig. 1 I is the cross-sectional view of the display device of another embodiment of the present invention.In this embodiment, display device 100 includes
Photoluminescent layers 148 on light-emitting diode chip for backlight unit 110, this photoluminescent layers 148 include the first photoluminescent layers 148A,
Second photoluminescent layers 148B and third photoluminescent layers 148C respectively corresponds luminescence unit 132D, 132E, 132F, and shines
Unit 132D, 132E, 132F all issue the light of same color, such as blue light, ultraviolet light or any other suitable color
Light.
This photoluminescent layers 148 may include fluorescence coating, phosphorescent layer, aforementioned quantum dot film or other any suitable light
Electroluminescent material, and luminescence unit 132D, 132E, 132F pass through this three photoluminescent layers 148 (that is, the first photoluminescent layers
148A, the second photoluminescent layers 148B and third photoluminescent layers 148C) generate three kinds of colors light (such as blue light, feux rouges and
Green light).
Although this is photic it is noted that the photoluminescent layers 148 of Fig. 1 I are set on light-emitting diode chip for backlight unit 110
Luminescent layer 148 can also be set in light-emitting diode chip for backlight unit 110.Alternatively, in other embodiments, it can be by the light of this photoluminescent layers
Electroluminescent material is mixed in array substrate (including the elements such as first substrate 114, transistor 116 and light-emitting diode chip for backlight unit 110)
In glue material when being bonded with the second substrate 130.Alternatively, in other embodiments, before the second substrate 130 has opposite side each other
Side 130S1 and back side 130S2, and this photoluminescent layers 148 can be set to the front side 130S1 or back side 130S2 of the second substrate 130.
Alternatively, in other embodiments, this chromatic filter layer 136 can be set to the back side of light-emitting diode chip for backlight unit 110 to the second substrate 130
Any suitable position between 130S2, and the second substrate 130 is display device 100 in load outermost on light direction at this time
Body.
Fig. 1 J is the cross-sectional view for disclosing the display device of another embodiment.In this embodiment, this photoluminescent layers 148 wraps
The second photoluminescent layers 148B and third photoluminescent layers 148C are included, luminescence unit 132E, 132F are respectively corresponded.This luminescence generated by light
Layer 148 can save material cost, and luminescence unit by saving the first photoluminescent layers 148A of corresponding luminescence unit 132D
132D, 132E, 132F all issue the light of same color, such as the light of blue light or any other suitable color.
Some embodiments of the invention are the light-emitting diode chip for backlight unit that will issue different colours (such as red, blue, green)
In array substrate.However, due to the variation in production process, even between the light-emitting diode chip for backlight unit of same color still
There are the differences of frequency spectrum.And before light-emitting diode chip for backlight unit is engaged in array substrate, it need to select that there is suitably luminous frequency spectrum
Light-emitting diode chip for backlight unit, and while engaging, need to engage respectively the light-emitting diode chip for backlight unit of different colours, therefore the production time be caused to increase
Add.Therefore, some embodiments of the invention by using solid color light-emitting diode chip for backlight unit, and cooperate chromatic filter layer and/
Or photoluminescent layers, to reach true color and the production time can be greatly reduced.
In addition, as illustrated in figs, viewing area is completely covered in light-emitting diode chip for backlight unit 110.In addition, this light-emitting diodes
The corresponding 3N transistor 116 of tube chip 110 is arranged, the positive integer that wherein N is 1 or more.Since white is (red, blue by three primary colors
Color and green) it is formed, therefore the number of the corresponding transistor 116 of light-emitting diode chip for backlight unit 110 is set as 3N, theoretically
The usage quantity of light-emitting diode chip for backlight unit 110 can be optimized, such as in fig. ib, this light-emitting diode chip for backlight unit 110 is three corresponding
Transistor 116A, 116B, 116C setting.
Fig. 2A is the top view of the display device 200 of another embodiment of the present invention.As shown in Figure 2 A, light-emitting diode chip for backlight unit
210 corresponding 6 transistors 216A, 216B, 216C, 216D, 216E, 216F settings.
In addition, B, the figure are the cross-sectional views drawn along the line segment 2B-2B of Fig. 2A referring to fig. 2.Luminescence unit 232 passes through
One first electrode 234 is electrically connected to connection electrode 228 and transistor 216, and is electrically connected to jointly by another second electrode 238
Electrode 212.In addition, electric current flows into luminescence unit 232 via transistor 216 and first electrode 234, and flowed by second electrode 238
Luminescence unit 232 out, and luminescence unit 232 is thus allowed to shine.
It should be noted that light-emitting diode chip for backlight unit of the invention can also in addition to the embodiment shown in above-mentioned Figure 1A-Fig. 2 B
The transistor setting of corresponding other quantity, as illustrated in the exemplary embodiment of figure 3.The scope of the present invention is not shown in Figure 1A-Fig. 2 B
Embodiment is limited.
Fig. 3 is the aobvious of three kinds of possible aspects of the invention to the corresponding number of transistors of light-emitting diode chip for backlight unit enumerated
The top view of showing device, the corresponding number of transistors of light-emitting diode chip for backlight unit can change according to demand, not with above-mentioned three kinds
It is limited.Wherein the corresponding 2N transistor 316 of light-emitting diode chip for backlight unit 310 is arranged, the positive integer that wherein N is 1 or more.For example, hair
Corresponding 16 transistors 316 of luminous diode chip 310A are arranged；Corresponding 4 transistors 316 of light-emitting diode chip for backlight unit 310B are arranged；
Corresponding 4 transistors 316 of light-emitting diode chip for backlight unit 310C are arranged.Light-emitting diode chip for backlight unit 310B and light-emitting diode chip for backlight unit 310C
The quantity of corresponding transistor 316 is although identical, but light-emitting diode chip for backlight unit 310B includes issuing a kind of shining for color of light
Unit, light-emitting diode chip for backlight unit 310C then include the two or more luminescence units that can issue different colours light respectively.
It should be noted that the present invention is located at the transistor of different lines in addition to above-mentioned Figure 1A-embodiment shown in Fig. 3
A common electrode can be shared, as shown in the embodiment of Fig. 4 A- Fig. 4 B.The scope of the present invention is not with Figure 1A-reality shown in Fig. 3
Example is applied to be limited.
Fig. 4 A is the top view of the display device 400A of another embodiment of the present invention.Display device 400A includes first crystal
Pipe column 440A and second transistor column 440B, and the first transistor column 440A and second transistor column 440B separately include multiple crystalline substances
Body pipe 416.The first transistor column 440A is electrically connected a first grid polar curve 446A.Second transistor column 440B is electrically connected a second gate
Polar curve 446B.
Display device 400A further includes set on the column common electrode between first grid polar curve 446A and second gate line 446B
412, and light-emitting diode chip for backlight unit 410A corresponds to the first transistor column 440A and second transistor column 440B setting.And light-emitting diodes
Tube chip 410A includes multiple luminescence units 432.And this multiple luminescence unit 432 is all electrically connected column common electrode 412.In detail and
Speech, the second electrode of this multiple luminescence unit 432 are all electrically connected the column common electrode 412 on first substrate 114.And this multiple hair
The first electrode of light unit 432 is then respectively electrically connected to the drain electrode of corresponding transistor 416.
For example, in one embodiment, as shown in Figure 4 A, this light-emitting diode chip for backlight unit 410A corresponds to the first transistor column 440A
And wherein four transistors 416 in second transistor column 440B are arranged.And four of light-emitting diode chip for backlight unit 410A are luminous single
Member 432 is electrically connected this four transistors 416, and is all electrically connected column common electrode 412.Specifically, this four lists that shine
The second electrode of member 432 is all electrically connected the column common electrode 412 on first substrate 114.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 4 A, transistor and light-emitting diode chip for backlight unit of the invention
There can also be other configurations mode, as shown in the embodiment of Fig. 4 B.The scope of the present invention is not limited with embodiment shown in Fig. 4 A.
Fig. 4 B is the top view of the display device 400A of another embodiment of the present invention.Display device 400A includes first crystal
Pipe row 442A and second transistor row 442B, and the first transistor row 442A and second transistor row 442B separately include multiple crystalline substances
Body pipe 416.The first transistor row 442A is electrically connected one first data line 444A, one second number of second transistor row 442B electrical connection
According to line 444B.
Display device 400A further includes set on the row common electrode between the first data line 444A and the second data line 444B
448, in this embodiment, as shown in Figure 4 B, it is brilliant that this light-emitting diode chip for backlight unit 410A corresponds to the first transistor row 442A and second
Wherein four transistors 416 in body pipe row 442B are arranged.And four luminescence units 432 difference of light-emitting diode chip for backlight unit 410A
It is electrically connected this four transistors 416 to be arranged, and is all electrically connected row common electrode 448.Specifically, this four luminescence units 432
Second electrode be all electrically connected the row common electrode 448 on first substrate 114.
In the present invention, the direction of " column " meaning is the direction parallel with the grid line of display device, and " row " meaning
Direction is the direction vertical with the grid line of display device.
It should be noted that light-emitting diode chip for backlight unit of the invention can also in addition to the embodiment shown in above-mentioned Fig. 4 A- Fig. 4 B
There is other configurations mode, as shown in the embodiment of figure 5 a.The scope of the present invention is not with embodiment shown in Fig. 4 A- Fig. 4 B
Limit.It should be noted that will hereinafter be indicated with the same or similar element above or film layer with the same or similar label, material
Material, manufacturing method and function all with it is described previously same or similar, so part will not be described in great detail below.
Fig. 5 A is the top view of the display device 500A of another embodiment of the present invention.Embodiment shown in Fig. 5 A and earlier figures
The something in common of the embodiment of 4A- Fig. 4 B is that corresponding four transistors 516 of a light-emitting diode chip for backlight unit 510A are arranged, until
In the difference is that the part light-emitting diode chip for backlight unit 510A covering viewing area 102.
In the present invention, the part light-emitting diode chip for backlight unit 510A covering viewing area 102, and light-emitting diode chip for backlight unit 510A covers
The ratio of lid viewing area 102 can be used following calculation method and acquire: the light-emitting diode chip for backlight unit 510A in viewing area is thrown
Shadow to first substrate 114 has a chip projected area A, and the projection of viewing area 102 to first substrate 114 has a display perspective plane
Product B, and the ratio is the ratio A/B of chip projected area A and display projected area B.
Wherein, chip projected area A is projected to the area of first substrate 114 for single light-emitting diode chip for backlight unit and is multiplied by hair
The number of luminous diode chip.It is the area of viewing area 102 well-known to those skilled in the art as display projected area B
(not deducting the area that the black matrix" in viewing area 102 is accounted for).
In the present invention, the ratio A/B of chip projected area A and display projected area B are between 0~1.
Fig. 5 B is the top view of the display device 500B of another embodiment of the present invention.Embodiment shown in Fig. 5 B and earlier figures
The embodiment of 5A the difference is that light-emitting diode chip for backlight unit 510B corresponds to the second crystal of permutation the first transistor column 540A and permutation
Pipe column 540B setting.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 4 A- Fig. 4 B, transistor and light emitting diode of the invention
Chip can also have other configurations mode, as shown in the embodiment of Fig. 6 A- Figure 11 E.The scope of the present invention is not with Fig. 4 A- Fig. 4 B institute
The embodiment shown is limited.It should be noted that hereinafter will be with the same or similar with the same or similar element above or film layer
Label indicate, material, manufacturing method and function all with it is described previously same or similar, so part will no longer go to live in the household of one's in-laws on getting married below
It states.
Fig. 6 A is the local top view of the display device 600A of another embodiment of the present invention.As shown in Figure 6A, display device
Multiple transistors of 600A include the first transistor 616A and second transistor 616B.
In addition, display device 600A includes grid line 646 and two data line 648A and 648B, and thus grid line
646 and two data line 648A and 648B control the first transistor 616A and second transistor 616B.This grid line 646 along
Direction A1 extends, and two data line 648A, 648B extend along direction A2.In addition, display device 600A includes one positioned at two
Row common electrode 650 between data line 648A, 648B equally extends along direction A2.
Light-emitting diode chip for backlight unit 610A corresponds to the first transistor 616A and second transistor 616B setting, and light emitting diode
Chip 610A includes the first luminescence unit 632A and the second luminescence unit 632B, this first luminescence unit 632A and second shines single
First 632B is respectively electrically connected to the first transistor 616A and second transistor 616B, and the first luminescence unit 632A and second shines
Unit 632B is all electrically connected to row common electrode 650.
In addition, in the embodiment shown in Fig. 6 A, although the part light-emitting diode chip for backlight unit 610A covering viewing area 102,
Transistor 616A, 616B corresponding to it is completely covered in light-emitting diode chip for backlight unit 610A.
It should be noted that transistor of the invention can also have other configurations side in addition to the embodiment shown in above-mentioned Fig. 6 A
Formula, as shown in the embodiment of Fig. 6 B- Fig. 6 C.The scope of the present invention is not limited with embodiment shown in Fig. 6 A.
It should be noted that light-emitting diode chip for backlight unit of the invention can also in addition to the embodiment shown in above-mentioned Fig. 6 A- Fig. 6 C
There is other configurations mode, as shown in the embodiment of Fig. 6 D, the part light-emitting diode chip for backlight unit 610B covering viewing area 102, luminous two
Pole pipe chip 610B also partially covers transistor 616A, 616B corresponding to it.For more detailed, light-emitting diode chip for backlight unit
Connection electrode 628A, 628B of 610B covering transistor 616A, 616B.But there is no the reality of connection electrode 628A, 628B at other
It applies in example, the drain electrode of light-emitting diode chip for backlight unit 610B covering transistor 616A, 616B.
Fig. 6 E is the cross-sectional view drawn along the line segment 6E-6E of Fig. 6 D.As shown in the embodiment of Fig. 6 E, not by luminous two
Transistor 616A, 616B of a part of pole pipe chip 610B covering are covered by light shield layer 652A and 652B.This light shield layer 652A
And 652B is set on chromatic filter layer 636.In addition, the luminescence unit 632C and 632D of this light-emitting diode chip for backlight unit 610B all pass through
Same second electrode 638 is electrically connected to row common electrode 650.But in other embodiments, luminescence unit 632C and 632D can also
There is respective second electrode 638.
The material of this light shield layer 652A and 652B can for black photoresist, black printed ink, black resin or its
Its any suitable light screening material and color.
Fig. 6 F is the light-emitting diode chip for backlight unit of the embodiment of Fig. 6 D of the present invention and the exploded view of first substrate.Fig. 6 F is painted hair
First electrode 634A, 634B and second electrode 638 of luminous diode chip 610B.Fig. 6 F is also painted the crystalline substance on first substrate 614
Body pipe 616A and 616B, connection electrode 628A and 628B, row common electrode 650, grid line 646 and two data line 648A and
648B。
It should be noted that light-emitting diode chip for backlight unit of the invention can also in addition to the embodiment shown in above-mentioned Fig. 6 A- Fig. 6 F
There is other configurations mode, as shown in the embodiment of Fig. 7 A- Fig. 7 D.The scope of the present invention shown in Fig. 6 A- Fig. 6 F not implement
Example is limited.Fig. 7 A is the local top view of the display device 700A of the embodiment of the present invention.As shown in Figure 7 A, display device 700A packet
Include the first transistor 716A, second transistor 716B, third transistor 716C and the 4th transistor 716D.
In addition, display device 700A include two grid lines 746A, 746B and two data line 748A, 748B, and by
This two grid lines 746A, 746B and two data line 748A, 748B control the first transistor 716A, second transistor
716B, third transistor 716C and the 4th transistor 716D.
In addition, display device 700A includes row common electrode 750, this journey common electrode 750 has the of opposite side each other
Side S1 and second side S2.The first transistor 716A and second transistor 716B is located at the first side S1 of row common electrode 750, the
Three transistor 716C and the 4th transistor 716D are set to second side S2 of row common electrode 750.
Light-emitting diode chip for backlight unit 710A correspond to the first transistor 716A, second transistor 716B, third transistor 716C and
4th transistor 716D setting, and light-emitting diode chip for backlight unit 710A include the first luminescence unit 732A, the second luminescence unit 732B,
Third luminescence unit 732C and the 4th luminescence unit 732D is electrically connected the first transistor 716A, second transistor 716B,
Three transistor 716C and the 4th transistor 716D.This first luminescence unit 732A, the second luminescence unit 732B, third luminescence unit
732C and the 4th luminescence unit 732D are all electrically connected to row common electrode 750.
In addition, in the embodiment shown in Fig. 7 A, although the part light-emitting diode chip for backlight unit 710A covering viewing area 102,
Transistor 716A, 716B, 716C, 716D corresponding to it is completely covered in light-emitting diode chip for backlight unit 710A.
It should be noted that transistor of the invention can also have other configurations side in addition to the embodiment shown in above-mentioned Fig. 7 A
Formula, as shown in the embodiment of Fig. 7 B- Fig. 7 C.The scope of the present invention is not limited with embodiment shown in Fig. 7 A.
It should be noted that light-emitting diode chip for backlight unit of the invention can also in addition to the embodiment shown in above-mentioned Fig. 7 A- Fig. 7 C
There is other configurations mode, as shown in the embodiment of Fig. 7 D.The scope of the present invention is not with embodiment shown in Fig. 7 A- Fig. 7 C
Limit.
Embodiment shown in Fig. 7 D is with the embodiment of earlier figures 7A- Fig. 7 C the difference is that the portion light-emitting diode chip for backlight unit 710B
Point covering viewing area 102, light-emitting diode chip for backlight unit 710B also partially cover transistor 716A, 716B corresponding to it, 716C,
716D.For more detailed, the connection electrode of light-emitting diode chip for backlight unit 710B covering transistor 716A, 716B, 716C, 716D
726A,726B,726C,726D.But in the embodiment that other do not have connection electrode 726A, 726B, 726C, 726D, luminous two
The drain electrode of pole pipe chip 610B covering transistor 716A, 716B, 716C, 716D.
It should be noted that common electrode of the invention can also have other in addition to the embodiment shown in above-mentioned Fig. 6 A- Fig. 7 D
Configuration mode, as shown in the embodiment of Fig. 8 A- Fig. 8 D.The scope of the present invention is not limited with embodiment shown in Fig. 6 A- Fig. 7 D.
It should be noted that will hereinafter be indicated with the same or similar element above or film layer with the same or similar label, material,
Manufacturing method and function all with it is described previously same or similar, so part will not be described in great detail below.
Fig. 8 A is the local top view of the display device 800A of the embodiment of the present invention.As shown in Figure 8 A, display device 800A
Multiple transistors include the first transistor 816A and second transistor 816B.
In addition, display device 800A includes two grid lines 846A, 846B and data line 848, and thus two grids
Line 846A, 846B and data line 848 control the first transistor 816A and second transistor 816B.
In addition, display device 800A includes column common electrode 854, and the first transistor 816A and second transistor 816B divides
Not Wei Yu column common electrode 854 opposite side.And light-emitting diode chip for backlight unit 810A corresponds to the first transistor 816A and the second crystal
Pipe 816B setting, and light-emitting diode chip for backlight unit 810A includes the first luminescence unit 832A and the second luminescence unit 832B, this first
Luminescence unit 832A and the second luminescence unit 832B is electrically connected the first transistor 816A and second transistor 816B, and first
Luminescence unit 832A and the second luminescence unit 832B are all electrically connected to column common electrode 854.
In addition, in the embodiment shown in Fig. 8 A, although the part light-emitting diode chip for backlight unit 810A covering viewing area 102,
Transistor 816A, 816B corresponding to it is completely covered in light-emitting diode chip for backlight unit 810A.
It should be noted that the transistor of transistor of the invention can also have it in addition to the embodiment shown in above-mentioned Fig. 8 A
Its configuration mode, as shown in the embodiment of Fig. 8 B- Fig. 8 C.The scope of the present invention is not limited with embodiment shown in Fig. 8 A.
It should be noted that light-emitting diode chip for backlight unit of the invention can also in addition to the embodiment shown in above-mentioned Fig. 8 A- Fig. 8 C
There is other configurations mode, as shown in the embodiment of Fig. 8 D.The scope of the present invention is not with embodiment shown in Fig. 6 A- Fig. 8 C
Limit.
Embodiment shown in Fig. 8 D is with the embodiment of earlier figures 8A- Fig. 8 C the difference is that the portion light-emitting diode chip for backlight unit 810B
Divide covering viewing area 102, light-emitting diode chip for backlight unit 810B also partially covers transistor 816A, 816B corresponding to it.In more detail
For, connection electrode 826A, 826B of light-emitting diode chip for backlight unit 810B covering transistor 816A, 816B.But do not have at other
In the embodiment of connection electrode 826A, 826B, the drain electrode of light-emitting diode chip for backlight unit 810B covering transistor 816A, 816B.
It should be noted that light-emitting diode chip for backlight unit of the invention can also in addition to the embodiment shown in above-mentioned Fig. 8 A- Fig. 8 D
There is other configurations mode, as shown in the embodiment of Fig. 9 A- Fig. 9 D.The scope of the present invention shown in Fig. 8 A- Fig. 8 D not implement
Example is limited.
Fig. 9 A is the local top view of the display device 900A of the embodiment of the present invention.As shown in Figure 9 A, display device 900A
Multiple transistors include the first transistor 916A, second transistor 916B, third transistor 916C and the 4th transistor 916D.
In addition, display device 900A include two grid lines 946A, 946B and two data line 948A, 948B, and by
This two grid lines 946A, 946B and two data line 948A, 948B control the first transistor 916A, second transistor
916B, third transistor 916C and the 4th transistor 916D.
In addition, display device 900A includes column common electrode 954, this column common electrode 954 has the of opposite side each other
Side S3 and second side S4.The first transistor 916A and second transistor 916B is located at the first side S3 of column common electrode 954, the
Three transistor 916C and the 4th transistor 916D are located at second side S4 of column common electrode 954.
Light-emitting diode chip for backlight unit 910A correspond to the first transistor 916A, second transistor 916B, third transistor 916C and
4th transistor 916D setting, and light-emitting diode chip for backlight unit 910A include the first luminescence unit 932A, the second luminescence unit 932B,
Third luminescence unit 932C and the 4th luminescence unit 932D is electrically connected the first transistor 916A, second transistor 916B,
Three transistor 916C and the 4th transistor 916D.This first luminescence unit 932A, the second luminescence unit 932B, third luminescence unit
932C and the 4th luminescence unit 932D are all electrically connected to column common electrode 954.
In addition, in the embodiment shown in Fig. 9 A, although the part light-emitting diode chip for backlight unit 910A covering viewing area 102,
Transistor 916A, 916B, 916C, 916D corresponding to it is completely covered in light-emitting diode chip for backlight unit 910A.
It should be noted that the transistor of transistor of the invention can also have it in addition to the embodiment shown in above-mentioned Fig. 9 A
Its configuration mode, as shown in the embodiment of Fig. 9 B- Fig. 9 C.The scope of the present invention is not limited with embodiment shown in Fig. 9 A.
It should be noted that light-emitting diode chip for backlight unit of the invention can also in addition to the embodiment shown in above-mentioned Fig. 9 A- Fig. 9 C
There is other configurations mode, as shown in the embodiment of Fig. 9 D.The scope of the present invention is not with embodiment shown in Fig. 9 A- Fig. 9 C
Limit.
Embodiment shown in Fig. 9 D is with the embodiment of earlier figures 9A- Fig. 9 C the difference is that the portion light-emitting diode chip for backlight unit 910B
Point covering viewing area 102, light-emitting diode chip for backlight unit 910B also partially cover transistor 916A, 916B corresponding to it, 916C,
916D.Particularly, the connection electrode of light-emitting diode chip for backlight unit 910B covering transistor 916A, 916B, 916C, 916D
926A,926B,926C,926D.But in the embodiment that other do not have connection electrode 926A, 926B, 926C, 926D, luminous two
The drain electrode of pole pipe chip 910B covering transistor 916A, 916B, 916C, 916D.
It should be noted that light-emitting diode chip for backlight unit of the invention can also in addition to the embodiment shown in above-mentioned Fig. 9 A- Fig. 9 D
There is other configurations mode, as shown in the embodiment of Figure 10 A- Figure 10 D.The scope of the present invention is not with real shown in Fig. 9 A- Fig. 9 D
Example is applied to be limited.
Figure 10 A is the local top view of the display device 1000A of the embodiment of the present invention.As shown in Figure 10 A, display device
Multiple transistors of 1000A include the first transistor 1016A, second transistor 1016B, the crystalline substance of third transistor 1016C and the 4th
Body pipe 1016D.
In addition, display device 1000A includes two grid lines 1046A, 1046B and two data line 1048A, 1048B,
And thus two grid lines 1046A, 1046B and two data line 1048A, 1048B control the first transistor 1016A, second
Transistor 1016B, third transistor 1016C and the 4th transistor 1016D.
In addition, display device 1000A includes row common electrode 1050 and column common electrode 1054, this journey common electrode 1050
The first side S5 and second side S6 with opposite side each other, this column common electrode 1054 have each other the third side S7 of opposite side and
4th side S8, and intersect with row common electrode 1050, row common electrode 1054 and column common electrode 1054 can if equal potentials
It is electrically connected to each other, without electrical connection if there is different current potential.The first transistor 1016A and second transistor 1016B is located at row
First side S5 of common electrode 1050, third transistor 1016C and the 4th transistor 1016D are located at the of row common electrode 1050
Two side S6.In addition, the first transistor 716A and third transistor 716C is located at the third side S7 of column common electrode 1054, second is brilliant
Body pipe 716B and the 4th transistor 716D is located at the 4th side S8 of column common electrode 1054.
Light-emitting diode chip for backlight unit 1010A corresponds to the first transistor 1016A, second transistor 1016B, third transistor
1016C and the 4th transistor 1016D setting, and light-emitting diode chip for backlight unit 1010A includes the first luminescence unit 1032A, the second hair
Light unit 1032B, third luminescence unit 1032C and the 4th luminescence unit 1032D are electrically connected the first transistor 1016A,
Two-transistor 1016B, third transistor 1016C and the 4th transistor 1016D.This first luminescence unit 1032A, the second luminous list
First 1032B, third luminescence unit 1032C and the 4th luminescence unit 1032D are all electrically connected to row common electrode 1050 and column are common
Electrode 1054.
The electric fields uniform degree in device can be increased using row common electrode 1050 and column common electrode 1054 simultaneously, therefore can be mentioned
Rise display quality.
In addition, in the embodiment shown in Figure 10 A, although the part light-emitting diode chip for backlight unit 1010A covering viewing area 102,
But transistor 1016A, 1016B, 1016C, 1016D corresponding to it is completely covered in light-emitting diode chip for backlight unit 1010A.
It should be noted that the transistor of transistor of the invention can also have it in addition to the embodiment shown in above-mentioned Figure 10 A
Its configuration mode, as shown in the embodiment of Figure 10 B- Figure 10 C.The scope of the present invention is not limited with embodiment shown in Figure 10 A.
It should be noted that in addition to the embodiment shown in above-mentioned Figure 10 A- Figure 10 C, light-emitting diode chip for backlight unit of the invention
There can be other configurations mode, as shown in the embodiment of Figure 10 D.The scope of the present invention shown in Figure 10 A- Figure 10 C not implement
Example is limited.
Embodiment shown in Figure 10 D is with the embodiment of earlier figures 10A- Figure 10 C the difference is that light-emitting diode chip for backlight unit
The part 1010B covering viewing area, light-emitting diode chip for backlight unit 1010B also partially cover transistor 1016A, 1016B corresponding to it,
1016C,1016D.For more detailed, light-emitting diode chip for backlight unit 1010B covering transistor 1016A, 1016B, 1016C, 1016D
Connection electrode 1026A, 1026B, 1026C, 1026D.But there is no connection electrode 1026A, 1026B, 1026C, 1026D at other
Embodiment in, the drain electrode of light-emitting diode chip for backlight unit 1010B covering transistor 1016A, 1016B, 1016C, 1016D.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 6 A- Figure 10 D, grid line of the invention and data line
There can be other configurations mode, as shown in the embodiment of Figure 11 A- Figure 11 E.The scope of the present invention is not shown in Fig. 6 A- Figure 10 D
Embodiment is limited.
Figure 11 A is the local top view of the display device 1100A of the embodiment of the present invention.As shown in Figure 11 A, display device
Multiple transistors of 1100A include the first transistor 1116A, second transistor 1116B, the crystalline substance of third transistor 1116C and the 4th
Body pipe 1116D.
This display device 1100A includes a grid line 1146 and four data line 1148A, 1148B, 1148C, 1148D,
And thus one article of grid line 1146 and four data line 1148A, 1148B, 1148C, 1148D control the first transistor 1116A, the
Two-transistor 1116B, third transistor 1116C and the 4th transistor 1116D.
Four transistors are controlled with a grid line 1146 and four data line 1148A, 1148B, 1148C, 1148D, it can
Increase the scan frequency of device, or increases sweep time each time, and can thus promote display quality.
It should be noted that the transistor of transistor of the invention can also have it in addition to the embodiment shown in above-mentioned Figure 11 A
Its configuration mode, as shown in the embodiment of Figure 11 B- Figure 11 D.The scope of the present invention is not limited with embodiment shown in Figure 11 A.
It should be noted that in addition to the embodiment shown in above-mentioned Figure 11 A- Figure 11 D, light-emitting diode chip for backlight unit of the invention
There can be other configurations mode, as shown in the embodiment of Figure 11 E.The scope of the present invention shown in Figure 11 A- Figure 11 D not implement
Example is limited.
Embodiment shown in Figure 11 E is with the embodiment of earlier figures 11A- Figure 11 D the difference is that light-emitting diode chip for backlight unit
The part 1110B covering viewing area 102, light-emitting diode chip for backlight unit 1110B also partially cover transistor 1116A corresponding to it,
1116B,1116C,1116D.For more detailed, the connection of light-emitting diode chip for backlight unit 1110B covering transistor 1116B, 1116C
Electrode 1126B, 1126C.But in the embodiment that other do not have connection electrode 1126B, 1126C, light-emitting diode chip for backlight unit 1110B
The drain electrode of covering transistor 1116B, 1116C.
Figure 12 A is the light-emitting diode chip for backlight unit 1210 of another embodiment of the present invention and the side view of substrate SB.Figure 12 B is this
The lower view of light-emitting diode chip for backlight unit 1210.As shown in Figure 12 A- Figure 12 B, according to some embodiments of the invention, set on substrate SB
There is a light-emitting diode chip for backlight unit 1210.In some embodiments of the invention, substrate SB can be a transistor base.
Light-emitting diode chip for backlight unit 1210 include three luminescence units 1232A, 1232B and 1232C, this luminescence unit 1232A,
1232B and 1232C are alternatively referred to as luminous zone.In this embodiment, luminescence unit 1232A, 1232B and 1232C is set to same
In light-emitting diode chip for backlight unit 1210.Also it is sayed, this luminescence unit 1232A, 1232B and 1232C are respectively the same light-emitting diodes
The different piece of tube chip 1210.
In some embodiments of the invention, luminescence unit 1232A, 1232B of this light-emitting diode chip for backlight unit 1210 and
1232C can be made by the same chip, and this light-emitting diode chip for backlight unit 1210 is by luminescence unit 1232A, 1232B and 1232C mono-
Body shapes (formed in one piece).
In some embodiments of the invention, luminescence unit 1232A issues blue light, and luminescence unit 1232B issues green light, hair
Light unit 1232C issues feux rouges.And light-emitting diode chip for backlight unit 1210 can by control this luminescence unit 1232A, 1232B and
1232C and the light for issuing white light or other any colors.
In the present invention, the capable of emitting color of luminescence unit is not restricted to red green blue tricolor, other theoretically or
Actually can all may be used by the color that electroluminescent cell generates.
With continued reference to shown in Figure 12 A- Figure 12 B, according to some embodiments of the present invention, the hair of light-emitting diode chip for backlight unit 1210
Light unit includes upper surface 1232S1 and lower surface 1232S2, and this light-emitting diode chip for backlight unit 1210 may include being set to luminescence unit
Lower surface 1232S2 multiple electrodes.Specifically, light-emitting diode chip for backlight unit 1210 includes being set under luminescence unit 1232A
The electrode 12A1 and electrode 12A2 of surface 1232S2, this electrode 12A1 and electrode 12A2 are electrically connected to luminescence unit 1232A.This electricity
Pole 12A1 and electrode 12A2 may respectively be P-type electrode and N-type electrode, and luminescence unit 1232A can pass through this electrode 12A1 and electricity
Pole 12A2 is bonded to substrate SB, and is electrically connected to substrate SB.
In addition, light-emitting diode chip for backlight unit 1210 further includes the electrode of the lower surface 1232S2 set on luminescence unit 1232B
12B1 and electrode 12B2, this electrode 12B1 and electrode 12B2 are electrically connected to luminescence unit 1232B.This electrode 12B1 and electrode 12B2
It may respectively be P-type electrode and N-type electrode, and luminescence unit 1232B can be bonded to substrate by this electrode 12B1 and electrode 12B2
SB, and it is electrically connected to substrate SB.
In addition, light-emitting diode chip for backlight unit 1210 further includes the electrode of the lower surface 1232S2 set on luminescence unit 1232C
12C1 and electrode 12C2, this electrode 12C1 and electrode 12C2 are electrically connected to luminescence unit 1232C.This electrode 12C1 and electrode 12C2
It may respectively be P-type electrode and N-type electrode, and luminescence unit 1232C can be bonded to substrate by this electrode 12C1 and electrode 12C2
SB, and it is electrically connected to substrate SB.
With continued reference to shown in Figure 12 A, according to some embodiments of the present invention, electrode 12A1, electrode 12A2, electrode 12B1,
Electrode 12B2, electrode 12C1 and electrode 12C2 are all set to the lower surface 1232S2 of the luminescence unit of light-emitting diode chip for backlight unit 1210
On.In other words, electrode 12A1, electrode 12A2, electrode 12B1, electrode 12B2, electrode 12C1 and electrode 12C2 are all set to luminous two
On the same side of pole pipe chip 1210, and this light-emitting diode chip for backlight unit 1210 is bonded to by way of upside-down mounting (flip chip)
On substrate SB.
In embodiments of the present invention, it since light-emitting diode chip for backlight unit includes simultaneously multiple luminescence units, and can individually issue
The light of white light or other any colors, thus compared to use be only capable of issuing the light-emitting diode chip for backlight unit of single kind of color display dress
It sets, the embodiment of the present invention can reduce the quantity of light-emitting diode chip for backlight unit used in display device.Therefore production work can be reduced
Light-emitting diode chip for backlight unit is bonded to the number of transistor base in skill, thus can reduce manufacture craft time and manufacture craft at
This, and promote yield.
Further, since only needing the color for expressing a pixel using a light-emitting diode chip for backlight unit, rather than use three
Light-emitting diode chip for backlight unit expresses the color of a pixel, therefore resolution ratio can be improved in the embodiment of the present invention.Furthermore due to being not required to make
With the color for the light that wavelength conversion material is issued with conversion light emitting diode chip, therefore the embodiment of the present invention can reduce device
Thickness.
Figure 13 A is the light-emitting diode chip for backlight unit 1310 of another embodiment of the present invention and the side view of substrate SB.Figure 13 B is this
The lower view of light-emitting diode chip for backlight unit 1310.Embodiment shown in Figure 13 A- Figure 13 B and the embodiment of earlier figures 12A- Figure 12 B
The difference is that luminescence unit 1332A, 1332B and 1332C are electrically connected to community electrode 13E.Specifically, luminescence unit
1332A is electrically connected to electrode 13A1 and common electrode 13E, and luminescence unit 1332B is electrically connected to electrode 13B1 and common electrode
13E, and luminescence unit 1332C is electrically connected to electrode 13C1 and common electrode 13E.
Figure 14 A is the light-emitting diode chip for backlight unit 1410 of another embodiment of the present invention and the side view of substrate SB.Figure 14 B is this
The lower view of light-emitting diode chip for backlight unit 1410.Embodiment shown in Figure 14 A- Figure 14 B and the embodiment of earlier figures 12A- Figure 12 B
The difference is that light-emitting diode chip for backlight unit 1410 includes four luminescence units 1432A, 1432B, 1432C and 1432D.
In some embodiments of the invention, luminescence unit 1432A issues blue light, and luminescence unit 1432B issues green light, hair
Light unit 1432C issues feux rouges, and luminescence unit 1432D issues yellow light.And light-emitting diode chip for backlight unit 1410 can be additional by this
Luminescence unit 1432D increases its light emission luminance.
With continued reference to shown in Figure 14 A- Figure 14 B, according to some embodiments of the present invention, light-emitting diode chip for backlight unit 1410 can be wrapped
Include the multiple electrodes of the lower surface 1432S2 set on luminescence unit.Specifically, light-emitting diode chip for backlight unit 1410 includes being set to hair
The electrode 14A1 and electrode 14A2 of the lower surface 1432S2 of light unit 1432A, this electrode 14A1 and electrode 14A2 are electrically connected to hair
Light unit 1432A.This electrode 14A1 and electrode 14A2 may respectively be P-type electrode and N-type electrode, and luminescence unit 1432A can lead to
It crosses this electrode 14A1 and electrode 14A2 is bonded to substrate SB, and be electrically connected to substrate SB.
In addition, light-emitting diode chip for backlight unit 1410 further includes the electrode of the lower surface 1432S2 set on luminescence unit 1432B
14B1 and electrode 14B2, this electrode 14B1 and electrode 14B2 are electrically connected to luminescence unit 1432B.This electrode 14B1 and electrode 14B2
It may respectively be P-type electrode and N-type electrode, and luminescence unit 1432B can be bonded to substrate by this electrode 14B1 and electrode 14B2
SB, and it is electrically connected to substrate SB.
In addition, light-emitting diode chip for backlight unit 1410 further includes the electrode of the lower surface 1432S2 set on luminescence unit 1432C
14C1 and electrode 14C2, this electrode 14C1 and electrode 14C2 are electrically connected to luminescence unit 1432C.This electrode 14C1 and electrode 14C2
It may respectively be P-type electrode and N-type electrode, and luminescence unit 1432C can be bonded to substrate by this electrode 14C1 and electrode 14C2
SB, and it is electrically connected to substrate SB.
In addition, light-emitting diode chip for backlight unit 1410 further includes the electrode of the lower surface 1432S2 set on luminescence unit 1432D
14D1 and electrode 14D2, this electrode 14D1 and electrode 14D2 are electrically connected to luminescence unit 1432D.This electrode 14D1 and electrode 14D2
It may respectively be P-type electrode and N-type electrode, and luminescence unit 1432D can be bonded to substrate by this electrode 14D1 and electrode 14D2
SB, and it is electrically connected to substrate SB.
Figure 15 A is the light-emitting diode chip for backlight unit 1510 of another embodiment of the present invention and the side view of substrate SB.Figure 15 B is this
The lower view of light-emitting diode chip for backlight unit 1510.Embodiment shown in Figure 15 A- Figure 15 B and the embodiment of earlier figures 12A- Figure 12 B
The difference is that luminescence unit 1532A, 1532B, 1532C and 1532D are electrically connected to community electrode 15E.Specifically, it shines single
First 1532A is electrically connected to electrode 15A1 and common electrode 15E, and luminescence unit 1532B is electrically connected to electrode 15B1 and common electrode
15E, luminescence unit 1532C are electrically connected to electrode 15C1 and common electrode 15E, and luminescence unit 1532D is electrically connected to electrode
15D1 and common electrode 15E.
Figure 16 A is the light-emitting diode chip for backlight unit 1610 of another embodiment of the present invention and the side view of substrate SB.Figure 16 B is this
The lower view of light-emitting diode chip for backlight unit 1610.Embodiment shown in 16A-16B figure and the embodiment of earlier figures 12A- Figure 12 B
The difference is that light-emitting diode chip for backlight unit 1610 includes two luminescence units 1632A and 1632B.Luminescence unit 1632A and 1632B electricity
It is connected to community electrode 16E.Specifically, luminescence unit 1632A is electrically connected to electrode 16A1 and common electrode 16E, shines
Unit 1632B is electrically connected to electrode 16B1 and common electrode 16E.
In addition, luminescence unit 1632A issues blue light, luminescence unit 1632B issues yellow light.Light-emitting diode chip for backlight unit 1610 can
The light of white light or other any colors is issued and controlling this luminescence unit 1632A and 1632B.
Figure 17 A is the light-emitting diode chip for backlight unit 1710 of another embodiment of the present invention and the side view of substrate SB.Figure 17 B is this
The lower view of light-emitting diode chip for backlight unit 1710.Embodiment shown in Figure 17 A- Figure 17 B and the embodiment of earlier figures 12A- Figure 12 B
The difference is that display device further includes a wavelength conversion material layer 1738 (or photoluminescent layers 1738), it is set to light-emitting diodes
On the upper surface 1732S1 of tube chip 1710.
In some embodiments of the invention, the capable of emitting blue light of luminescence unit 1732A, 1732B and 1732C, and this wavelength
This blue light can be converted to white light by transition material layer 1738.
In addition, luminescence unit 1732A is electrically connected to electrode 17A1 and common electrode 17E, luminescence unit 1732B is electrically connected to
Electrode 17B1 and common electrode 17E, luminescence unit 1732C are electrically connected to electrode 17C1 and common electrode 17E.
Figure 18 A is the light-emitting diode chip for backlight unit 1810 of another embodiment of the present invention and the side view of substrate SB.Figure 18 B is this
The lower view of light-emitting diode chip for backlight unit 1810.Embodiment shown in Figure 18 A- Figure 18 B and the embodiment of earlier figures 17A- Figure 17 B
The difference is that wavelength conversion material layer is not provided on the luminescence unit 1832A of light-emitting diode chip for backlight unit 1810, and luminescence unit
1832B is equipped with wavelength conversion material layer 1838B, and luminescence unit 1832C is equipped with wavelength conversion material layer 1838C.
In some embodiments of the invention, the capable of emitting blue light of luminescence unit 1832A, 1832B and 1832C, and this wavelength
The blue light that transition material layer 1838B can issue luminescence unit 1832B is converted to green light, and wavelength conversion material layer 1838C can be incited somebody to action
The blue light that luminescence unit 1832C is issued is converted to feux rouges.The blue light that this feux rouges, green light and luminescence unit 1832A are issued can mix
For white light or the light of other any colors.
In addition, luminescence unit 1832A is electrically connected to electrode 18A1 and common electrode 18E, luminescence unit 1832B is electrically connected to
Electrode 18B1 and common electrode 18E, luminescence unit 1832C are electrically connected to electrode 18C1 and common electrode 18E.
Figure 19 A is the light-emitting diode chip for backlight unit 1910 of another embodiment of the present invention and the side view of substrate SB.Figure 19 B is this
The lower view of light-emitting diode chip for backlight unit 1910.Embodiment shown in Figure 19 A- Figure 19 B and the embodiment of earlier figures 12A- Figure 12 B
The difference is that electrode 19A1 and electrode 19A2 are respectively arranged on the lower surface 1932S2 and upper surface 1932S1 of luminescence unit 1932A.
Electrode 19B1 and electrode 19B2 is respectively arranged on the lower surface 1932S2 and upper surface 1932S1 of luminescence unit 1932B.Electrode 19C1
And electrode 19C2 is respectively arranged on the lower surface 1932S2 and upper surface 1932S1 of luminescence unit 1932C.
Figure 20 A is the light-emitting diode chip for backlight unit 2010 of another embodiment of the present invention and the side view of substrate SB.Figure 20 B is this
The lower view of light-emitting diode chip for backlight unit 2010.Embodiment shown in Figure 20 A- Figure 20 B and the embodiment of earlier figures 13A- Figure 13 B
The difference is that common electrode 20E is set to the upper surface of luminescence unit 2032A, luminescence unit 2032B and luminescence unit 2032C
On 2032S1, and electrode 20A1, electrode 20B1 and electrode 20C1 are respectively arranged on luminescence unit 2032A, luminescence unit 2032B and hair
On the lower surface 2032S2 of light unit 2032C.
Figure 21 A is the light-emitting diode chip for backlight unit 2110 of another embodiment of the present invention and the side view of substrate SB.Figure 21 B is this
The lower view of light-emitting diode chip for backlight unit 2110.Embodiment shown in Figure 21 A- Figure 21 B and the embodiment of earlier figures 16A- Figure 16 B
The difference is that common electrode 21E is set on the upper surface 2132S1 of luminescence unit 2132A and luminescence unit 2132B, and electrode
21A1 and electrode 21B1 is respectively arranged on the lower surface 2132S2 of luminescence unit 2132A and luminescence unit 2132B.
Figure 22 is the side view of the light-emitting diode chip for backlight unit 2210 of another embodiment of the present invention.Embodiment shown in Figure 22 with
The embodiment of earlier figures 15A- Figure 15 B the difference is that common electrode 22E be set to luminescence unit 2232A, luminescence unit 2232B,
Luminescence unit 2232C, luminescence unit 2232D upper surface 2232S1 on, and electrode 22A1, electrode 22B1, electrode 22C1 and electricity
Pole 22D1 is respectively arranged on the lower surface of luminescence unit 2232A, luminescence unit 2232B, luminescence unit 2232C, luminescence unit 2232D
On 2232S2.
Figure 23 is the side view of the light-emitting diode chip for backlight unit 2310 of another embodiment of the present invention.Embodiment shown in Figure 23 with
The embodiment of earlier figures 15A- Figure 15 B the difference is that electrode 23A2, electrode 23B2, electrode 23C2 and electrode 23D2 are respectively arranged on
Luminescence unit 2332A, luminescence unit 2332B, luminescence unit 2332C, luminescence unit 2332D upper surface 2332S1 on, and it is electric
Pole 23A1, electrode 23B1, electrode 23C1 and electrode 23D1 are respectively arranged on luminescence unit 2332A, luminescence unit 2332B, luminous list
First 2332C, luminescence unit 2332D lower surface 2332S2 on.
Figure 24 A is the top view of the light-emitting diode chip for backlight unit 2410A of another embodiment of the present invention.As shown in fig. 24 a, according to
Some embodiments of the invention, light-emitting diode chip for backlight unit 2410A are rectangle, and each luminescence unit 2432A, luminescence unit
On the whole 2432B and luminescence unit 2432C are square.
Figure 24 B is the top view of the light-emitting diode chip for backlight unit 2410B of another embodiment of the present invention.As shown in fig. 24b, according to
Some embodiments of the invention, light-emitting diode chip for backlight unit 2410B are rectangle, and each luminescence unit 2432A, luminescence unit
On the whole 2432B and luminescence unit 2432C is also rectangle.
Figure 24 C is the top view of the light-emitting diode chip for backlight unit 2410C of another embodiment of the present invention.As shown in Figure 24 C, according to
Some embodiments of the invention, light-emitting diode chip for backlight unit 2410C is triangle, and light-emitting diode chip for backlight unit 2410C includes three hairs
Light unit, respectively luminescence unit 2432A, luminescence unit 2432B and luminescence unit 2432C.
Figure 24 D is the top view of the light-emitting diode chip for backlight unit 2410D of another embodiment of the present invention.As shown in Figure 24 D, according to
Some embodiments of the invention, light-emitting diode chip for backlight unit 2410D is triangle, and light-emitting diode chip for backlight unit 2410D includes two hairs
Light unit, respectively luminescence unit 2432A and luminescence unit 2432B.
Figure 25 A is the top view of the light-emitting diode chip for backlight unit 2510A of another embodiment of the present invention.As shown in fig. 25 a, according to
Some embodiments of the invention, light-emitting diode chip for backlight unit 2510A is circle, and light-emitting diode chip for backlight unit 2510A includes two and shines
Unit, respectively luminescence unit 2532A and luminescence unit 2532B.
Figure 25 B is the top view of the light-emitting diode chip for backlight unit 2510B of another embodiment of the present invention.As shown in Figure 25 B, according to
Some embodiments of the invention, light-emitting diode chip for backlight unit 2510B is circle, and light-emitting diode chip for backlight unit 2510B includes three and shines
Unit, respectively luminescence unit 2532A, luminescence unit 2532B and luminescence unit 2532C.
Display device of the invention is not limited in the illustrated state of Figure 1A-Figure 25 B.The present invention can only include figure
One or more any features of one or more any embodiments of 1A- Figure 25 B.In other words, and the feature of not all diagram must
It is implemented in display device of the invention simultaneously.
In embodiments of the present invention, common electrode preferably includes being total to for row common electrode, column common electrode or whole face
Same electrode, but be not limited thereto.
In embodiments of the present invention, luminescence unit preferably includes p type semiconductor layer, n type semiconductor layer and is connected to
The first electrode of p type semiconductor layer and the second electrode for being connected to n type semiconductor layer, but be not limited thereto.
In embodiments of the present invention, a light-emitting diode chip for backlight unit includes multiple luminescence units, preferably refers to one luminous two
Pole pipe chip is formed as combined by multiple groups p type semiconductor layer independent of each other, n type semiconductor layer, first electrode, second electrode
Flat light emission, but be not limited thereto.
In conclusion the embodiment of the present invention makes corresponding at least two crystal of a light-emitting diode chip for backlight unit in display device
Pipe setting, to reduce the quantity of light-emitting diode chip for backlight unit used in display device.Therefore can reduce will hair in manufacture craft
Luminous diode chip is bonded to the number of array substrate, therefore can reduce manufacture craft time and manufacture craft cost, and promoted good
Rate.The light-emitting diode chip for backlight unit that some embodiments of the invention will issue different colours (such as red, blue, green) is set to array
On substrate.However, due to the variation in production process, even there are still have frequency between the light-emitting diode chip for backlight unit of same color
The difference of spectrum.And before light-emitting diode chip for backlight unit is engaged in array substrate, luminous two with appropriate luminous frequency spectrum need to be selected
Pole pipe chip, and the light-emitting diode chip for backlight unit of different colours need to be engaged respectively when engagement, therefore the production time is caused to increase.Therefore,
Some embodiments of the invention and cooperate chromatic filter layer and/or photic hair by using the light-emitting diode chip for backlight unit of solid color
Photosphere, to reach true color and the production time can be greatly reduced.
Although disclosed above the embodiment of the present invention and its advantage, it will be appreciated that any technical field
Middle skilled person can change, substitute and retouching without departing from the spirit and scope of the present invention.In addition, of the invention
Protection scope be not necessarily limited by manufacture craft in specification in the specific embodiment, machine, manufacture, material composition, device,
Method and step, skilled person can understand the existing or following institute from disclosure of the present invention in any technical field
Manufacture craft, machine, manufacture, material composition, device, method and the step developed, as long as can the embodiment here
It is middle implement more or less the same function or obtain more or less the same result all can be used according to the invention.Therefore, protection scope of the present invention
Including above-mentioned manufacture craft, machine, manufacture, material composition, device, method and step.In addition, each claim is constituted individually
Embodiment, and protection scope of the present invention also includes the combination of each claim and embodiment.
Claims (20)
1. a kind of display device, comprising:
First substrate；
The first transistor and second transistor are set on the first substrate；
Common electrode is set on the first substrate；And
Light-emitting diode chip for backlight unit, the corresponding the first transistor and the second transistor are set on the first substrate, this luminous two
Pole pipe chip includes the first luminescence unit and the second luminescence unit；
Wherein, which is respectively electrically connected to the first transistor and the common electrode, and second luminescence unit
It is respectively electrically connected to the second transistor and the common electrode；
Wherein, which is located at below the light-emitting diode chip for backlight unit.
2. display device as described in claim 1, wherein the light-emitting diode chip for backlight unit correspond to 2N transistor be set to this
On one substrate, wherein N be 1 or more positive integer.
3. display device as described in claim 1, also comprising the third transistor being set on the first substrate, and this shines
Diode chip for backlight unit also corresponds to the third transistor and is set on the first substrate, which includes that third is luminous single
Member, wherein the third luminescence unit is respectively electrically connected to the third transistor and the common electrode.
4. display device as claimed in claim 3, wherein the light-emitting diode chip for backlight unit correspond to 3N transistor be set to this
On one substrate, wherein N be 1 or more positive integer.
5. display device as described in claim 1, also includes:
Fluorescence coating is set to the light-emitting surface of the light-emitting diode chip for backlight unit.
6. display device as claimed in claim 5, also includes:
The second substrate is arranged relative to the first substrate；And
Chromatic filter layer is set between the first substrate and the second substrate, wherein the chromatic filter layer includes the first coloured silk
Color filter unit and the second colored light-filtering units, wherein first colored light-filtering units are located at the light out of first luminescence unit
On path, which is located on the light path out of second luminescence unit.
7. display device as described in claim 1, also includes:
The second substrate is arranged relative to the first substrate；And
Quantum dot film is set between the first substrate and the second substrate, wherein the quantum dot film includes the first amount
Son point film and the second quantum dot film, wherein first quantum dot film is located on the light path out of first luminescence unit,
Second quantum dot film is located on the light path out of second luminescence unit.
8. display device as described in claim 1, also includes:
First scan line is set on the first substrate, is extended along a first direction；
Second scan line is set on the first substrate, is extended along the first direction；And
Data line is set on the first substrate, is extended along a second direction, the first direction is on the whole perpendicular to the second party
To；
Wherein, which is electrically connected first scan line and the data line, which is electrically connected
Second scan line and the data line.
9. display device as described in claim 1, also includes:
Scan line is set on the first substrate, is extended along a first direction；
First data line is set on the first substrate, is extended along a second direction；And
Second data line is set on the first substrate, along the second direction extend, the first direction on the whole perpendicular to this second
Direction；
Wherein, which is electrically connected first data line and the scan line, which is electrically connected
Second data line and the scan line.
10. display device as described in claim 1, also includes:
Third transistor and the 4th transistor, are set on the first substrate；
Wherein, which also corresponds to the third transistor and the 4th transistor is set on the first substrate,
The light-emitting diode chip for backlight unit also includes third luminescence unit and the 4th luminescence unit, and the common electrode includes interlaced with each other the
Community electrode and the second common electrode；
Wherein, which is respectively electrically connected to the third transistor and the common electrode, and the 4th luminescence unit
It is respectively electrically connected to the 4th transistor and the common electrode.
11. display device as described in claim 1, also includes:
Scan line is set on the first substrate；
First data line is set on the first substrate；
Second data line is set on the first substrate；
Third data line is set on the first substrate；
4th data line is set on the first substrate；
Third transistor and one the 4th transistor, are set on the first substrate；
Wherein, the more corresponding third transistor of the light-emitting diode chip for backlight unit and the 4th transistor are set on the first substrate,
The light-emitting diode chip for backlight unit also includes a third luminescence unit and one the 4th luminescence unit, wherein third luminescence unit difference
It is electrically connected to the third transistor and the common electrode, and the 4th luminescence unit is respectively electrically connected to the 4th transistor and is somebody's turn to do
Common electrode；
Wherein, which is electrically connected first data line and the scan line, which is electrically connected
Second data line and the scan line, the third transistor are electrically connected the third data line and the scan line, and the 4th
Transistor is electrically connected the 4th data line and the scan line.
12. display device as described in claim 1, wherein normal direction of the light-emitting diode chip for backlight unit in the first substrate
Upper covering the first transistor and the second transistor.
13. display device as described in claim 1, wherein normal direction of the light-emitting diode chip for backlight unit in the first substrate
Upper part covers the first transistor and the second transistor.
14. display device as described in claim 1, also includes:
The second substrate is arranged relative to the first substrate；And
Separation material is set between the first substrate and the second substrate.
15. display device as claimed in claim 14, wherein the separation material is located at a non-display area of the display device.
16. display device as claimed in claim 14, wherein the separation material is located at a viewing area of the display device.
17. display device as described in claim 1, wherein
First luminescence unit includes one to be electrically connected to the first electrode of the first transistor and one be electrically connected to the common electricity
The second electrode of pole.
18. display device as claimed in claim 17, wherein the first transistor is a thin film transistor (TFT), the film crystal
Pipe includes gate electrode, source electrode and drain electrode.
19. display device as claimed in claim 18, wherein the thin film transistor (TFT) also includes connection electrode, is electrically connected respectively
Connect the drain electrode and the first electrode.
20. display device as described in claim 1, wherein first luminescence unit is separately included with second luminescence unit
Inorganic light-emitting diode.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510568431 | 2015-09-09 | ||
| CN2015105684312 | 2015-09-09 | ||
| CN201610081439 | 2016-02-05 | ||
| CN2016100814390 | 2016-02-05 |
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| CN106531759A CN106531759A (en) | 2017-03-22 |
| CN106531759B true CN106531759B (en) | 2019-07-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610390544.2A Active CN106531759B (en) | 2015-09-09 | 2016-06-03 | Display device |
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| CN110676280A (en) * | 2018-05-30 | 2020-01-10 | 鸿富锦精密工业（深圳）有限公司 | Display panel and manufacturing method thereof |
| TW202119652A (en) * | 2019-10-31 | 2021-05-16 | 隆達電子股份有限公司 | Display device and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044552A (en) * | 2009-10-16 | 2011-05-04 | 乐金显示有限公司 | Display device using quantum dot |
| CN102810296A (en) * | 2012-08-14 | 2012-12-05 | 深圳市华星光电技术有限公司 | Organic display device and display with same |
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| JP4702136B2 (en) * | 2006-03-28 | 2011-06-15 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
| WO2008100043A1 (en) * | 2007-02-16 | 2008-08-21 | Samsung Electronics Co., Ltd. | Active reflective polarizer and magnetic display panel comprising the same |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044552A (en) * | 2009-10-16 | 2011-05-04 | 乐金显示有限公司 | Display device using quantum dot |
| CN102810296A (en) * | 2012-08-14 | 2012-12-05 | 深圳市华星光电技术有限公司 | Organic display device and display with same |
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