CN105842941B - Display panel - Google Patents
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- CN105842941B CN105842941B CN201510015873.4A CN201510015873A CN105842941B CN 105842941 B CN105842941 B CN 105842941B CN 201510015873 A CN201510015873 A CN 201510015873A CN 105842941 B CN105842941 B CN 105842941B
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Abstract
The present invention discloses a kind of display panel, comprising: a substrate, substrate include non-display area, and wherein non-display area includes an at least thin film transistor (TFT), and wherein thin film transistor (TFT) includes: the first opening row and the second opening row, are adjacent to the two sides of the first metal layer respectively；Second metal layer, including first part and second part, it is adjacent to the two sides of the first metal layer respectively, the wherein corresponding first opening row of first part, the corresponding second opening row of second part, wherein the shortest distance at the edge of the first part of second metal layer to the edge of the first metal layer is first distance, and the shortest distance at edge to the edge of the first metal layer of the second part of second metal layer is second distance, and second distance is greater than first distance.
Description
Technical field
The present invention relates to thin film transistor (TFT) and its display panels, and more particularly to a kind of film crystal with metal layer
Pipe and its display panel.
Background technique
Liquid crystal display device has been widely applied in recent years on the display element of all kinds of products.Liquid crystal display dress
It sets using liquid crystal molecule under different ordered states, there is the characteristic of different polarization or refraction effect to control light light
The penetration of line, and then liquid crystal display device is enable to generate image.Traditional stable twisted nematic (Twisted Nematic, TN)
Liquid crystal display device has extraordinary through characteristic, but is influenced by liquid crystal molecule structure and optical characteristics, its opposite view
Angle is very narrow.
In order to solve this problem, recent dealer has developed the wide viewing angle liquid crystal display device of other kinds of forms, such as flat
Face electric field switches (In-Plane Switching, abbreviation IPS) liquid crystal display device and fringe field switches (Fringe-
Field Switching, abbreviation FFS) liquid crystal display device with wide viewing angle such as liquid crystal display device.However, above-mentioned display
Device still may have durability bad, the short problem of life of product.
Therefore, industry a kind of can need further promote the display device of durability and life of product.
Summary of the invention
To solve the above problems, the present invention provides a kind of display panel, comprising: substrate, including viewing area and adjacent display
The non-display area in area, wherein non-display area includes an at least thin film transistor (TFT), and wherein thin film transistor (TFT) includes: semiconductor layer, if
In on substrate；First insulating layer is set on semiconductor layer；The first metal layer is set on the first insulating layer；Second insulating layer, if
In on the first metal layer；First opening row (via hole series) and the second opening row, are respectively arranged on the two of the first metal layer
Side, the first opening row include multiple first openings, and the second opening row includes multiple second openings, and the first opening and second are opened
Mouth sequentially runs through second insulating layer, the first insulating layer and the surface for exposing semiconductor layer；Second metal layer is set to second insulating layer
On, wherein second metal layer includes first part and second part, is respectively arranged on the two sides of the first metal layer, wherein first part
Corresponding first opening is arranged, and inserts multiple first openings to be electrically connected to semiconductor layer, and corresponding second opening of second part is arranged,
And multiple second openings of filling to be to be electrically connected to semiconductor layer, the wherein edge of the first part of second metal layer to the first metal
Layer edge the shortest distance be first distance, the edge of the second part of second metal layer to the edge of the first metal layer most
Short distance is second distance, and second distance is greater than first distance.
The present invention also provides a kind of display panels, comprising: a colored filter substrate is oppositely arranged with substrate；Liquid crystal layer,
Between substrate and colored filter substrate.
For feature and advantage of the invention can be clearer and more comprehensible, preferred embodiment is cited below particularly out, and appended by cooperation
Attached drawing is described in detail below.
Detailed description of the invention
Fig. 1 is the top view of the thin film transistor base plate of the embodiment of the present invention；
Fig. 2A is the top view of the active component set on non-display area of one embodiment of the invention；
The cross-sectional view that Fig. 2 B is drawn for the line segment 2B-2B along Fig. 2A；
Fig. 3 is the top view of the active component set on non-display area of another embodiment of the present invention；
Fig. 4 A is the top view of the active component set on non-display area of another embodiment of the present invention；
The cross-sectional view that Fig. 4 B is drawn for the line segment 4B-4B along Fig. 4 A；
Fig. 5 is the cross-sectional view of the display panel of the embodiment of the present invention；
Fig. 6 is the cross-sectional view of the display device of the embodiment of the present invention.
Symbol description
10 thin film transistor base plates；
20 substrates；
30 viewing areas；
40 non-display areas；
50 sub-pixels；
50C sub-pixel column；
50R sub-pixel column；
60 gate driving circuits；
70 source electrode drive circuits；
80 routes；
90 routes；
100 active components；
100A active component；
100B active component；
200 active components；
202 substrates；
204 buffer layers；
206 semiconductor layers；
The surface 206S；
208 first insulating layers；
210 the first metal layers；
The edge 210E；
212 second insulating layers；
214 first openings；
The opening row of 214S first；
216 second openings；
The opening row of 216S second；
218 second metal layers；
218A first part；
The edge 218AE；
218B second part；
The edge 218BE；
300 active components；
306 semiconductor layers；
310 the first metal layers；
The first branch portion of 310A；
The second branch portion of 310B；
314 first openings；
The opening row of 314S first；
316 second openings；
The opening row of 316S second；
318 second metal layers；
318A first part；
318B second part；
400 active components；
402 substrates；
404 buffer layers；
406 semiconductor layers；
The surface 406S；
408 first insulating layers；
410 the first metal layers；
The first branch portion of 410A；
The edge 410AE；
The second branch portion of 410B；
The edge 410BE；
412 second insulating layers；
414 first openings；
The opening row of 414S first；
416 second openings；
The opening row of 416S second；
417 thirds opening；
417S third opening row；
418 second metal layers；
418A first part；
The edge 418AE；
418B second part；
The edge 418BE；
418C Part III；
The edge 418CE；
500 display panels；
502 thin film transistor base plates；
504 colored filter substrates；
506 liquid crystal layers；
600 display devices；
602 backlight modules；
The direction A1；
The direction A2；
E1 curved end；
E2 curved end；
E3 curved end；
D1 distance；
D2 distance；
D3 distance；
D4 distance；
D5 distance；
D6 distance；
D7 distance；
L2 length；
L3 length；
L4 length；
W1 width；
W2 width；
W3 width；
W4 width；
The channel CH2；
2B-2B line segment；
4B-4B line segment.
Specific embodiment
It elaborates below for thin film transistor (TFT) and its display panel of the invention.It is to be understood that below chat
It states and many different embodiments or example is provided, to implement different patterns of the invention.Specific element as described below and row
Column mode is that the present invention is briefly described to the greatest extent.Certainly, these are only to illustrate and the restriction of non-present invention.In addition, in different implementations
Duplicate label or mark may be used in example.These repeat not represent and discussed only for simply clearly narration is of the invention
Different embodiments and/or structure between have any relevance.Furthermore it is located at one second material when addressing a first material layer
On layer or on when, the situation that is directly contacted including first material layer with second material layer.Alternatively, may also between be separated with one or more
The situation of more other materials layers may be not directly contacted between first material layer and second material layer in this case.
It must be it is to be understood that can be deposited for the element for being particularly described or illustrating with various forms known to this skilled worker
?.In addition, when certain layer is in other layers or substrate "upper", it is possible to refer to that " direct " on other layers or substrate, or refers to certain layer
On other layers or substrate, or refer to the other layers of sandwiched between other layers or substrate.
In addition, the term of relativity, such as " lower " or " bottom " and " higher " or " top " may be used in embodiment,
To describe relativeness of the element for another element of diagram.It is appreciated that, if the device overturning of diagram made
It turns upside down, then the element described in " lower " side will be as the element in " higher " side.
Here, the term of " about ", " about " is generally represented within the 20% of a given value or range, preferably 10% it
It is interior, and be more preferably within 5%.Given quantity is quantity about herein, implies that in the case where no certain illustrated, still may be used
The meaning of implicit " about ", " about ".
The embodiment of the present invention is to be set as the distance of the source electrode of the thin film transistor (TFT) in non-display area to grid with drain electrode extremely
The distance of grid is different, to promote the durability and life of product of display device.
Firstly, the figure is the top view of the thin film transistor base plate 10 of the embodiment of the present invention referring to Fig. 1.As shown in Figure 1,
Thin film transistor base plate 10 includes a substrate 20.This substrate 20 can be transparent substrate, may be, for example, glass substrate, ceramic substrate,
Plastic substrate or other any suitable transparent substrates.And this substrate 20 includes the non-display of viewing area 30 and adjacent display areas 30
Area 40.Viewing area 30, which refers to, is equipped with the region that the pixel including transistor is shown in thin film transistor base plate 10, and this transistor
It may be, for example, thin film transistor (TFT).And non-display area 40 is other regions in thin film transistor base plate 10 in addition to viewing area 30.
In this embodiment, non-display area 40 surrounds viewing area 30.
As shown in Figure 1, being equipped with multiple sub-pixels 50 in this viewing area 30, and gate driving circuit is equipped in non-display area 40
60 and source electrode drive circuit 70.This gate driving circuit 60 is to provide the sub-pixel of scanning pulse signal to viewing area 30
50, and this source electrode drive circuit 70 is to provide the sub-pixel 50 of source signal to viewing area 30, and cooperates above-mentioned scanning pulse
Signal controls each sub-pixel 50 being set in viewing area 30 together to generate image.
Specifically, it can be equipped with an at least active component 100 in gate driving circuit 60 and source electrode drive circuit 70, such as
Active component 100A in the gate driving circuit 60 and active component 100B in source electrode drive circuit 70.This has
Source element 100 can be thin film transistor (TFT).When showing image, the active component 100A in gate driving circuit 60 passes through line
Road 80 provides scanning pulse signal to multiple sub-pixels 50 simultaneously, such as provides scanning pulse signal to a pixel column simultaneously
All sub-pixels 50 in 50R, and the active component 100B being set in source electrode drive circuit 70 provides source by route 90 simultaneously
Pole signal is to multiple sub-pixels 50, such as provides all sub-pixels 50 of the source signal into a pixel column 50C simultaneously.
A and Fig. 2 B referring to fig. 2, this two figure are painted the active component 200 of one embodiment of the invention.Fig. 2A active member thus
The top view of part 200, and the cross-sectional view that Fig. 2 B is drawn along the line segment 2B-2B of Fig. 2A.It is brilliant that this active component 200 is set to film
The non-display area of body pipe substrate.More specifically, this active component 200 can be set on the non-of the thin film transistor base plate 10 of Fig. 1
In the gate driving circuit 60 and/or source electrode drive circuit 70 of viewing area 40.In one embodiment, this active component 200 can be
Thin film transistor (TFT).
Above-mentioned active component 200 includes the buffer layer 204 on substrate 202, and half on this buffer layer 204
Conductor layer 206.This substrate 202 is substrate 20 shown in FIG. 1, can be transparent substrate, may be, for example, glass substrate, ceramic base
Plate, plastic substrate or other any suitable transparent substrates.Above-mentioned buffer layer 204 can promote the membrane quality of semiconductor layer 206.
The material of this buffer layer 204 may include silica, silicon nitride, silicon oxynitride or combinations of the above.Above-mentioned semiconductor layer 206 can
The elemental semiconductor of silicon or germanium including mono-crystalline structures, polycrystalline structure or non crystalline structure；Amorphous silicon (amorphous
Silicon), polysilicon (polycrystalline silicon), indium gallium zinc (Indium gallium zinc
Oxide), gallium nitride (GaN), silicon carbide (silicon carbide), GaAs (gallium arsenic), gallium phosphide
(gallium phosphide), indium phosphide (indium phosphide), indium arsenide (indium arsenide) or indium antimonide
Compound semiconductors such as (indium antimonide)；SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP or
The alloy semiconductors such as GaInAsP or other suitable material and/or said combination.
In addition, this active component 200 further includes the first insulating layer 208 on the semiconductor layer 206, is set to this first absolutely
The first metal layer 210 in edge layer 208 and the second insulating layer 212 on this first metal layer 210.
This first insulating layer 208 is used as gate dielectric, and material can be silica, silicon nitride, silicon oxynitride, Gao Jie electricity
Constant (high-k) dielectric material or other any suitable dielectric materials or combinations of the above.This high dielectric constant (high-
K) material of dielectric material can be metal oxide, metal nitride, metal silicide, transition metal oxide, transition metal
Nitride, transition metal silicide, the nitrogen oxides of metal, metal aluminate, zirconium silicate, zircoaluminate.For example, this Gao Jie
Electric constant (high-k) dielectric material can be LaO, AlO, ZrO, TiO, Ta2O5、Y2O3、SrTiO3(STO)、BaTiO3(BTO)、
BaZrO、HfO2、HfO3、HfZrO、HfLaO、HfSiO、HfSiON、LaSiO、AlSiO、HfTaO、HfTiO、HfTaTiO、
HfAlON、(Ba,Sr)TiO3(BST)、Al2O3, other suitable materials other high-k dielectric materials or said combination.
This gate dielectric can be formed by chemical vapour deposition technique (CVD) or method of spin coating, this chemical vapour deposition technique for example may be used
For Low Pressure Chemical Vapor Deposition (low pressure chemical vapor deposition, LPCVD), cryochemistry gas
Phase sedimentation (low temperature chemical vapor deposition, LTCVD), be rapidly heated chemical vapor deposition
Area method (rapid thermal chemical vapor deposition, RTCVD), plasma auxiliary chemical vapor deposition
Method (plasma enhanced chemical vapor deposition, PECVD), the original of atomic layer chemical vapor deposition method
Sublayer sedimentation (atomic layer deposition, ALD) or other common methods.
This first metal layer 210 is used as gate electrode, and material may include but be not limited to copper (copper), aluminium
(aluminum), molybdenum (molybdenum), tungsten (tungsten), titanium (titanium), tantalum (tantalum), platinum (platinum)
Or hafnium (hafnium).The material of this gate electrode can pass through chemical vapour deposition technique above-mentioned (CVD), sputtering method, resistance heating
Vapour deposition method, e-beam evaporation or other any suitable depositional modes are formed.
Above-mentioned second insulating layer 212 as the first metal layer 210 (gate electrode) and subsequent second metal layer 218 (as
Source electrode and/or drain electrode) between interlayer dielectric layer, material can be normal for silica, silicon nitride, silicon oxynitride, high dielectric
Number (high-k) dielectric material or other any suitable dielectric materials or combinations of the above.In a preferred embodiment, this
Second insulating layer 212 has flat upper surface.Afore mentioned chemical vapour deposition process (CVD) shape can be used in this second insulating layer 212
At.
With continued reference to Fig. 2A and Fig. 2 B, active component 200 further includes one first opening row (via hole series) 214S
And one second opening row 216S.This first opening opening row of row 214S and second 216S is adjacent to the first metal layer 210 respectively
Two sides (or set on this first metal layer the first branch portion 210 two sides), and first opening row 214S include multiple first
Opening 214, and the second opening row 216S includes multiple second openings 216.This first opening 214 and the second opening 216 are sequentially passed through
Second insulating layer 212, the first insulating layer 208 and the surface 206S for exposing semiconductor layer 206 are worn, as shown in Figure 2 B.This first is opened
Mouth 214 and the second opening 216 are with the table of the side wall of the first insulating layer 208, the side wall of second insulating layer 212 and semiconductor layer 206
Face 206S definition.And as shown in Figure 2 A, arrangement equally spaced from each other between multiple first openings 214, and between multiple second openings 216
Also arrangement equally spaced from each other.
With continued reference to Fig. 2A and Fig. 2 B, active component 200 further includes being set in second insulating layer 212 and inserting above-mentioned first
The second metal layer 218 of opening 214 and the second opening 216.Specifically, this second metal layer 218 includes first part 218A
And second part 218B.The two sides that this first part 218A and second part 218B is respectively arranged on the first metal layer 210 (or are set
In the two sides of the first branch portion 210 of this first metal layer), and can be respectively as source electrode and drain electrode.For example, one
In embodiment, first part 218A is as source electrode, and second part 218B is as drain electrode.However, in other implementations
In example, first part 218A is as drain electrode, and second part 218B is as source electrode at this time.In addition, being set to the second gold medal
Belong to the semiconductor layer 206 under layer 210 (as gate electrode) in the first part 218A and second part of second metal layer 218
There is a channel C H2, the length of this channel C H2 is length L2 between 218B (as source electrode and drain electrode).
With continued reference to Fig. 2A and Fig. 2 B, the corresponding first opening row 214S setting of the first part 218A of second metal layer 218,
And multiple first openings 214 of filling are to be electrically connected to semiconductor layer 206.And the second part 218B of second metal layer 218 is corresponding
Second opening row's 216S setting, and multiple second openings 216 are inserted to be electrically connected to semiconductor layer 206.Specifically, the second gold medal
Belong to the side wall of the side wall of the first insulating layer 208 in the first opening 214 of first part 218A covering of layer 218, second insulating layer 212
And the surface 206S of semiconductor layer 206, and second part 218B also cover the side wall of the first insulating layer 208 in the second opening 216,
The side wall of second insulating layer 212 and the surface 206S of semiconductor layer 206.And the first part 218A of this second metal layer 218 and
Second part 218B is not fully filled with the first opening 214 and the second opening 216.It is to be noted, however, that in other embodiments
In, the first part 218A and second part 218B of second metal layer 218 can also be fully filled with the first opening 214 and the second opening
216, the scope of the present invention is not limited with embodiment shown in Fig. 2A-Fig. 2 B.
With continued reference to Fig. 2A and Fig. 2 B, the edge 218AE of the first part 218A of second metal layer 218 to the first metal layer
The shortest distance of 210 edge 210E is distance D1, the edge 218BE to first of the second part 218B of second metal layer 218
The shortest distance of the edge 210E of metal layer 210 is distance D2, and distance D2 is greater than distance D1.As shown in Figure 2 B, distance D2 ratio away from
From D1 grow with a distance from for distance D3.In other words, distance D2 is that distance D1 adds distance D3 (D2=D1+D3).
It is noted that the width (that is, width W1 and width W3) of the part due to 218 corresponding opening of second metal layer
The width (that is, width W2 and width W4) of part between corresponding two openings have a width it is poor (that is, W2-W1 or
W4-W3), therefore distance D1, D2 of Fig. 2A and Fig. 2 B distance D1, D2 actually also have poor (that is, the W2-W1 or W4- of this width
W3).However, since this width difference is much smaller than distance D1 and distance D2, therefore it is assumed herein that distance D1, D2 and Fig. 2 B of Fig. 2A away from
It is on the whole equal from D1, D2, illustrate this pattern characteristics to facilitate.
With continued reference to Fig. 2A, the long axis extending direction in the figure as the first metal layer 210 of gate electrode is A1, and with
This direction A1 vertical direction is direction A2.And above-mentioned shortest distance D1 refers on the A2 of direction, edge 218AE to edge 210E
The shortest distance.Similarly, above-mentioned shortest distance D2 refers on the A2 of direction, the most short distance of edge 218BE to other edge 210E
From.More specifically, edge 218AE and edge 210E are projected to substrate 202, and this two are projected on the A2 of direction most
Short distance is above-mentioned distance D1.Similarly, edge 218BE and edge 210E are projected to substrate 202, and this two are projected on
The shortest distance on the A2 of direction is above-mentioned distance D2.
The present invention increases the resistance of device and reduces the magnitude of current, generate device by elongating mono- distance D3 of channel C H2
Temperature reduce, the durability and life of product of Lai Tisheng display device.In the practice stated on the implementation, second part is only elongated
A distance D3 between 218A and the first metal layer 210 and the distance between first part 218B and the first metal layer 210 are kept
It is constant, hot carrier's effect can be further decreased, has to the durability for promoting display device and on the service life comparable help.
Above-mentioned distance D2 ratio distance D1 is about 0.1 μm to 1.0 μm (that is, distance D3), such as is about 0.2 μm to 0.7 μm.
It is noted that being greater than 1.0 μm if this length difference (that is, distance D3) is too big, then can excessively improve the resistance of device, make
The overall performance of device declines.However, being, for example, less than 0.1 μm, then can not effectively drop if this length difference (that is, distance D3) is too small
The magnitude of current of low device.
With continued reference to Fig. 2A, the edge 218AE of the first part 218A of second metal layer 218 to the side of second part 218B
The shortest distance of edge 218BE is distance D4, and distance D4 is less than the length L3 of the first opening row 214S.Specifically, it is above-mentioned away from
Refer to from D4 on the A2 of direction, the edge 218AE of the first part 218A of second metal layer 218 to the edge of second part 218B
The shortest distance of 218BE.Or more specifically, edge 218AE and edge 218BE are projected to substrate 202, and this two
The shortest distance being projected on the A2 of direction is above-mentioned distance D4.And the length L3 of above-mentioned first opening row 214S refers in first
The long axis extending direction of metal layer 210 is to be separated by between the edge of farthest two first opening 214 in the first opening row 214S on A1
Maximum distance.Similarly, length L4 of the above-mentioned distance D4 again smaller than the second opening row 216S.The definition of length L4 and above-mentioned length
L3 is similar, therefore does not repeat again herein.
In addition, as shown in Figure 2 A, the first metal layer 210 has curved end E1, the first part of second metal layer 218
218A has curved end E2, and the second part 218B of second metal layer 218 also has curved end E3.This curved end can
It avoids electrostatic charges accumulated in metal tip, the probability that active component 200 be wound by electrostatic charge can be reduced.
In addition, the width W1 of the part of corresponding first opening 214 of the first part 218A of second metal layer 218 is right less than its
Answer the width W2 of the part between two first openings 214.Similarly, the second part 218B corresponding second of second metal layer 218
The width W3 of the part of opening 216 corresponds to the width W4 of the part between two second openings 216 again smaller than it.This change width
Further can averagely disperse the electric current in second metal layer 218, thus can further lifting device service life.
It should be noted that although the first metal layer in embodiment shown in above-mentioned Fig. 1-Fig. 2 B as gate electrode only has
There is single long strip type electrode, however this first metal layer can also have multiple long strip type electrodes, such as the embodiment institute of following figure 3
Show.Therefore embodiment shown in Fig. 1-Fig. 2 B is only purposes of discussion, the scope of the present invention is not limited thereto.After it should be noted that
The same or similar element or film layer will be indicated Wen Zhongyu above with the same or similar label, material, manufacturing method and function
Can all with it is described previously same or similar, so part will not be described in great detail below.
It is the top view of the active component 300 set on non-display area of another embodiment of the present invention referring to Fig. 3, Fig. 3.Fig. 3
Shown in embodiment and earlier figures 2A- Fig. 2 B embodiment the difference is that the first metal layer 310 includes the first branch portion 310A
And the second branch portion 310B.First part 318A of this first branch portion 310A adjacent to second metal layer 318, and the second branch portion
Second part 318B of the 310B adjacent to second metal layer 318.And the first branch portion 310A to the second metal of the first metal layer 310
The shortest distance of the first part 318A of layer 318 is above-mentioned distance D1, and the second branch portion 310B of the first metal layer 310 is extremely
The shortest distance of the second part 318B of second metal layer 318 is above-mentioned distance D2.In addition, the first of the first metal layer 310
Second metal layer 318 is not provided between branch portion 310A and the second branch portion 310B.Above-mentioned includes the first branch portion 310A and
The first metal layer 310 of two branch portion 310B can have more preferably control ability to the channel under it.
Although it should be noted that as source electrode and/or the second gold medal of drain electrode in above-mentioned Fig. 1-embodiment shown in Fig. 3
Belong to layer only have there are two part, however this second metal layer can also have there are three part, such as the embodiment institute of following figure 4 A- Fig. 4 B
Show.Therefore Fig. 1-embodiment shown in Fig. 3 is only purposes of discussion, the scope of the present invention is not limited thereto.
A- Fig. 4 B referring to fig. 4, Fig. 4 A are the upper view of the active component 400 set on non-display area of another embodiment of the present invention
Figure, and the cross-sectional view that Fig. 4 B is drawn for the line segment 4B-4B along Fig. 4 A.Embodiment shown in Fig. 4 A- Fig. 4 B and earlier figures 2A-
The embodiment of Fig. 3 the difference is that the second metal layer 418 of active component 400 include first part 418A, second part 418B
And Part III 418C, and there are three opening rows for this active component 400 tool.
Specifically, this active component 400 can on substrate 402 sequentially be equipped with buffer layer 404, semiconductor layer 406, first
Insulating layer 408, the first metal layer 410, second insulating layer 412.This first metal layer 410 includes the first branch portion 410A and second
Branch portion 410B, and the first branch portion 410A and the second branch portion 410B are electrically connected to each other, as shown in Figure 4 A.
In addition, active component 400 further includes the first opening row (via hole series) 414S, the second opening row 416S
And third opening row 417S.This first opening row 414S is adjacent on the outside of the first branch portion 410A of the first metal layer 410, this
Three opening row 417S are adjacent between the first branch portion 410A and the second branch portion 410B, and this second opening row 416S is adjacent to
On the outside of second branch portion 410B of the first metal layer 410, as shown in Figure 4 A.In addition, this first opening row 414S includes multiple the
One opening 414, the second opening row 416S include multiple second openings 416, and third opening row 417S includes multiple third openings
417, this 414, second opening 416 of the first opening and third opening 417 all sequentially run through second insulating layer 412, the first insulating layer
408 and expose the surface 406S of semiconductor layer 406.
With continued reference to Fig. 4 A- Fig. 4 B, active component 400 further includes being set in second insulating layer 412 and inserting the first opening
414, the second metal layer 418 of the second opening 416 and third opening 417.Specifically, this second metal layer 418 includes first
Part 418A, second part 418B and Part III 418C sequentially correspond to above-mentioned first opening row 414S, the second opening row 416S
And third opening row's 417S setting.And first part 418A, second part 418B and the Part III 418C of second metal layer 418
Sequentially the 414, second opening 416 of the first opening of filling and third are open in 417 to be electrically connected to semiconductor layer 406.
In this active component 400, gate electrode of the above-mentioned the first metal layer 410 as active component 400.Above-mentioned second
The first part 418A and second part 418B of metal layer 418 as active component 400 source electrode or drain electrode its
One of, and the Part III 418C of second metal layer 418 is as the another of source electrode or drain electrode.For example, real one
It applies in example, the source electrode of first part 418A and second part 418B as this active component 400, and Part III at this time
418C is then used as drain electrode.However, in other embodiments, first part 418A and second part 418B are as this active member
The drain electrode of part 400, and Part III 418C is then used as source electrode at this time.
As can be seen from figures 4a-b, the edge 418AE of the first part 418A of second metal layer 418 is to the first metal layer 410
The first branch portion 410A edge 410AE the shortest distance be distance D1, the side of the Part III 418C of second metal layer 418
Edge 418CE to the first metal layer 410 the first branch portion 410A edge 410AE the shortest distance be distance D5, this distance D5
Greater than distance D1.
Similarly, the edge 418CE of the Part III 418C of second metal layer 418 to the first metal layer 410 the second branch
The shortest distance of the edge 410BE of portion 410B is distance D6, the edge of the second part 418B of second metal layer 418 to the first gold medal
Belong to layer 410 the second branch portion 410B edge 410BE the shortest distance be distance D2, this distance D2 be greater than distance D6, and away from
It is greater than distance D6 from D5.Above-mentioned about 0.1 μm to 1.0 μm (that is, distance D7) of distance D5 ratio distance D1, for example, about 0.2 μm extremely
0.7μm。
It is noted that due between corresponding two openings of the width of the part of 418 corresponding opening of second metal layer
The width of part have a width poor, therefore distance D1, D2, D5 and D6 of Fig. 4 A and Fig. 4 B distance D1, D2, D5 and D6 reality
On also have this width it is poor.However, since this width difference is much smaller than distance D1, D2, D5 and D6, therefore the it is assumed herein that distance of Fig. 4 A
D1, D2, D5 and D6 and Fig. 4 B distance D1, D2, D5 and D6 are on the whole equal, illustrate this pattern characteristics to facilitate.
It is moreover observed that the specific definition of above-mentioned distance D1, distance D2 are at a distance from the embodiment of Fig. 2A-Fig. 2 B
D1 and distance D2 are similar, therefore herein and repeat no more.
The present invention increases the resistance of device and reduces the magnitude of current, generate device by elongating one, channel distance D7
Temperature reduces, the durability and life of product of Lai Tisheng display device.In the practice stated on the implementation, second metal layer is only elongated
A distance D7 between 418 Part III 418C and the first branch portion 410A of the first metal layer 410 and the first metal layer 410
First part 418A and the distance between the first branch portion 410A of the first metal layer remain unchanged, hot load can be further decreased
Sub- effect is flowed, has to the durability for promoting display device and on the service life comparable help.Likewise, only elongating second metal layer
A distance D7 between 418 second part 418B and the second component 410B of the first metal layer 410 and second metal layer
The distance between 418 Part III 418C and the second branch portion 410B of the first metal layer 410 are remained unchanged, and also can reach drop
The effect of low-heat carrier effect.
In addition, capacitor is equal preferably between drain-gate for capacitor between Source-Gate in active component 400.For example, one
In embodiment, the first part 418A and second part 418B of second metal layer 418 are as source electrode, and Part III 418C
As drain electrode.And gate electrode is used as including the first metal layer 410 of the first branch portion 410A and the second branch portion 410B.
Have the between this first part 418A (as source electrode) and the first branch portion 410A (as gate electrode)
Capacitor between one Source-Gate, and this second part 418B (as source electrode) and the second branch portion 410B are (as grid electricity
Pole) between have the second Source-Gate between capacitor.And the Part III 418C (as drain electrode) of second metal layer 418 with
Be respectively provided between first branch portion 410A and the second branch portion 410B (as gate electrode) between the first drain-gate capacitor with
Capacitor between second drain-gate.And the summation of capacitor is preferred between capacitor and the second Source-Gate between above-mentioned first Source-Gate
And first the summation of capacitor is equal between capacitor and the second drain-gate between drain-gate.
Make in active component 400 capacitor is equal between capacitor and drain-gate between Source-Gate can lifting device performance.In detail
For thin, since source electrode and drain electrode are only defined by interelectrode current direction, the first part of above-mentioned second metal layer 418
418A, second part 418B and Part III 418C can be used as source electrode or drain electrode.Therefore, make source in active component 400
Pole-grid interelectrode capacity is equal with capacitor between drain-gate to make above-mentioned first part 418A, second part 418B and third portion
418C is divided not cause error because of different capacitances when converting between the source and drain, and can lifting device performance.
In addition, the present invention also provide with include above-mentioned active component thin film transistor base plate display panel.Referring to figure
5, which is the cross-sectional view of the display panel 500 of the embodiment of the present invention.As shown in figure 5, display panel 500 includes thin film transistor (TFT)
Substrate 502, upper substrate 504 and the display dielectric layer 506 between this thin film transistor base plate 502 and upper substrate 504.
In embodiments of the present invention, display panel 500 is liquid crystal display panel, and upper substrate 504 is colored filter substrate, display medium
Layer 506 is liquid crystal layer.In an alternative embodiment of the invention, display panel 500 is organic light emitting display panel, and upper substrate 504 is
Transparent substrate, display dielectric layer 506 are organic luminous layer.In still another embodiment of the process, display panel 500 is organic light emission
Display panel, upper substrate 504 are colored filter substrate, and display dielectric layer 506 is organic luminous layer.
This thin film transistor base plate 502 can be in the active component in embodiment of the non-display area equipped with above-mentioned Fig. 2A and Fig. 2 B
200, the active component 400 in the embodiment of the active component 300 in the embodiment of Fig. 3 or Fig. 4 A- Fig. 4 B.And this colour filter
Mating plate substrate 504 may include a transparent substrate and the chromatic filter layer (not being painted) on this transparent substrate.This colour filter
Photosphere can be red filter layer, green color filter, blue color filter layer or other any suitable chromatic filter layers.This liquid crystal layer
506 can be nematic crystal (nematic), smectic liquid crystal (smectic), cholesterol liquid crystal (cholesteric), blue phase liquid
Brilliant (Blue phase) or other any suitable liquid crystal materials.
Since the active component 200,300 or 400 in thin film transistor base plate 502 can increase the resistance of device and reduce electricity
Flow, the temperature for generating device reduce, and reduce hot carrier's effect, so display panel 500 can have it is more preferably durable
Property and life of product.
In addition, the present invention also provides the display device manufactured with this display panel.Referring to Fig. 6, which is that the present invention is implemented
The cross-sectional view of the display device 600 of example.As shown in fig. 6, display device 600 is including backlight module 602 and is set to this backlight mould
Display panel 500 on block 602.This backlight module 602 can be light-emitting diode (LED) backlight module or other any suitable backlights
Module.It need to know, if display panel 500 is organic light emitting display panel, backlight module can also be saved.Due to display surface
Active component in plate 500 can increase the resistance of device and reduce the magnitude of current, and the temperature for generating device reduces, and reduces hot load
Sub- effect is flowed, therefore display device 600 can have more preferably durability and life of product.
In conclusion the embodiment of the present invention by the distance of the source electrode of the thin film transistor (TFT) in non-display area to grid be set as with
It drains to the distance difference of grid, therefore the resistance of device can be increased and reduce the magnitude of current, the temperature for generating device reduces, and drops
Low-heat carrier effect, therefore the durability and life of product of display device can be promoted.
Although the embodiment of the present invention and its advantage have been invented as above, it will be appreciated that any technical field
Middle tool usually intellectual, without departing from the spirit and scope of the present invention, when can change, substitute with retouching.In addition, this hair
Bright protection scope be not necessarily limited by manufacture craft in specification in the specific embodiment, machine, manufacture, material composition,
Device, method and step, any those of ordinary skill in the art can understand existing from disclosure of the present invention
Or following manufacture craft, machine, manufacture, material composition, device, method and the step developed, as long as can be in this place
State that implement more or less the same function in embodiment or obtain more or less the same result all can be used according to the invention.Therefore, of the invention
Protection scope includes above-mentioned manufacture craft, machine, manufacture, material composition, device, method and step.In addition, each claim
An other embodiment is constituted, and protection scope of the present invention also includes the combination of each claim and embodiment.
Claims (17)
1. a kind of display panel, comprising:
Substrate, the non-display area including viewing area and the adjacent viewing area；
Thin film transistor (TFT), on the non-display area of the substrate；
Wherein the thin film transistor (TFT) includes:
Semiconductor layer is located on the substrate；
First insulating layer is located on the semiconductor layer；
The first metal layer is located on first insulating layer, and wherein the first metal layer includes gate electrode；
Second insulating layer is located on first insulating layer；
First opening row and the second opening row, are adjacent to the two sides of the first metal layer respectively, and first opening row includes multiple
First opening, and second opening row includes multiple second openings, and multiple first opening and multiple second opening are with this
The surface of the side wall of first insulating layer, the side wall of the second insulating layer and the semiconductor layer defines；
Second metal layer is located in the second insulating layer, and wherein the second metal layer includes source electrode and drain electrode, wherein
The source electrode is open to be electrically connected to the semiconductor layer by multiple first, and the drain electrode is opened by multiple second
Mouthful to be electrically connected to the semiconductor layer,
Wherein the shortest distance at the edge of the source electrode a to edge of the first metal layer is a first distance, drain electrode electricity
The edge of pole to the first metal layer other edge the shortest distance be a second distance, the second distance be different from this first
Distance.
2. display panel as described in claim 1, wherein the second distance is bigger than the first distance between 0.1 μm to 1.0 μm.
3. display panel as described in claim 1, wherein the edge of the source electrode of the second metal layer is electric to the drain electrode
The shortest distance at the edge of pole is a third distance, and third distance is less than the length of first opening row.
4. display panel as described in claim 1, wherein the gate electrode has a curved end.
5. display panel as described in claim 1, wherein the second metal layer correspond to the part of first opening width it is small
The width of part between corresponding two first openings of the second metal layer.
6. display panel as described in claim 1, wherein the arrangement equally spaced from each other of multiple first opening, multiple second opening
Arrangement equally spaced from each other.
7. display panel as described in claim 1, wherein the gate electrode includes the first branch portion and the second branch portion, wherein
First branch portion is adjacent to the source electrode of the second metal layer, and second branch portion is adjacent to the leakage of the second metal layer
Pole electrode.
8. display panel as claimed in claim 7, wherein second branch portion of the gate electrode has a curved end.
9. display panel as claimed in claim 7, wherein first branch portion of the gate electrode and second branch portion that
This electrical connection.
10. display panel as claimed in claim 7, the wherein source electrode of first branch portion to the second metal layer
The shortest distance is the first distance, and second branch portion to the second metal layer the drain electrode the shortest distance be this
Two distances.
11. a kind of display panel, comprising:
Substrate, the non-display area including viewing area and the adjacent viewing area；
Thin film transistor (TFT), on the non-display area of the substrate；
Wherein the thin film transistor (TFT) includes:
Semiconductor layer is located on the substrate；
First insulating layer is located on the semiconductor layer；
The first metal layer is located on first insulating layer, including the first branch portion and the second branch portion；
Second insulating layer is located on first insulating layer；
First opening row, is adjacent to the side of first branch portion, and first opening row includes multiple first openings,
Second opening row, is adjacent to the side of second branch portion, and second opening row includes multiple second openings,
Third opening row, between first branch portion and second branch portion, and third opening row includes multiple thirds
Opening；
Second metal layer is located in the second insulating layer, and wherein the second metal layer includes first part, second part and third
Part, by multiple first opening to be electrically connected to the semiconductor layer, which passes through multiple for the first part
Two openings are to be electrically connected to the semiconductor layer, and the Part III is open by multiple third to be electrically connected to the semiconductor
Layer,
Wherein the shortest distance at the edge of the first part a to edge of first branch portion be a first distance, this second
Point edge a to edge of second branch portion the shortest distance be a second distance, the first distance be different from this second away from
From.
12. display panel as claimed in claim 11, the wherein edge of the Part III to the another side of first branch portion
The shortest distance of edge is a third distance, and the shortest distance of the other edge at the edge of the Part III to second branch portion is
One the 4th distance, wherein the third distance is than the 4th apart from big between 0.1 μm to 1.0 μm.
13. display panel as claimed in claim 12, wherein the second distance is greater than the 4th distance, and third distance is big
In the first distance.
14. display panel as claimed in claim 11, the wherein edge of the second part of the second metal layer to the third
The shortest distance at partial edge is one the 5th distance, and the 5th distance is less than the length of third opening row.
15. display panel as claimed in claim 11, wherein the second metal layer corresponds to the width of the part of third opening
Less than the width of the part between the corresponding two thirds opening of the second metal layer.
16. display panel as claimed in claim 11, further includes:
Colored filter substrate；
Liquid crystal layer, between the substrate and the colored filter substrate.
17. display panel as claimed in claim 11, further includes:
Upper substrate；
Organic luminous layer, between the substrate and the upper substrate.
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| CN201910500162.4A CN110262144B (en) | 2015-01-13 | 2015-01-13 | Display panel |
| CN201510015873.4A CN105842941B (en) | 2015-01-13 | 2015-01-13 | Display panel |
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| KR20050049841A (en) * | 2003-11-24 | 2005-05-27 | 삼성에스디아이 주식회사 | Light emitting display device |
| CN1869797A (en) * | 2005-05-27 | 2006-11-29 | 三星电子株式会社 | Wiring for display device and thin film transistor array panel including the same and method for manufacturing thereof |
| CN102916009A (en) * | 2011-08-05 | 2013-02-06 | 三星显示有限公司 | Display substrate, method of manufacturing a display substrate and liquid crystal display device having a display substrate |
| CN204536697U (en) * | 2015-01-13 | 2015-08-05 | 群创光电股份有限公司 | Display panel |
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| JP4662647B2 (en) * | 2001-03-30 | 2011-03-30 | シャープ株式会社 | Display device and manufacturing method thereof |
| JP3821067B2 (en) * | 2002-07-11 | 2006-09-13 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
| JP4245036B2 (en) * | 2006-10-31 | 2009-03-25 | エプソンイメージングデバイス株式会社 | Liquid crystal display |
| KR101363714B1 (en) * | 2006-12-11 | 2014-02-14 | 엘지디스플레이 주식회사 | Organic thin film transistor, manufacturing method thereof, electrostatic discharge device using the same, liquid crystal display device and manufacturing method thereof |
| CN102013437B (en) * | 2009-09-07 | 2014-11-05 | 苏州捷芯威半导体有限公司 | Semiconductor device and making method thereof |
| CN202758893U (en) * | 2012-08-03 | 2013-02-27 | 成都国微电子有限公司 | Transistor layout structure and chip layout structure |
| CN103199113B (en) * | 2013-03-20 | 2018-12-25 | 京东方科技集团股份有限公司 | Thin film transistor (TFT) and preparation method thereof, array substrate, display device |
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| KR20050049841A (en) * | 2003-11-24 | 2005-05-27 | 삼성에스디아이 주식회사 | Light emitting display device |
| CN1869797A (en) * | 2005-05-27 | 2006-11-29 | 三星电子株式会社 | Wiring for display device and thin film transistor array panel including the same and method for manufacturing thereof |
| CN102916009A (en) * | 2011-08-05 | 2013-02-06 | 三星显示有限公司 | Display substrate, method of manufacturing a display substrate and liquid crystal display device having a display substrate |
| CN204536697U (en) * | 2015-01-13 | 2015-08-05 | 群创光电股份有限公司 | Display panel |
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| CN110262144B (en) | 2022-07-19 |
| CN110262144A (en) | 2019-09-20 |
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