CN106531759A - Display device - Google Patents
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- Publication number
- CN106531759A CN106531759A CN201610390544.2A CN201610390544A CN106531759A CN 106531759 A CN106531759 A CN 106531759A CN 201610390544 A CN201610390544 A CN 201610390544A CN 106531759 A CN106531759 A CN 106531759A
- Authority
- CN
- China
- Prior art keywords
- light
- transistor
- substrate
- emitting diode
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
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- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
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- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a display device, which comprises a plurality of transistors and a light-emitting diode chip, wherein the light-emitting diode chip is arranged corresponding to at least two transistors.
Description
Technical field
The present invention relates to display device, and more particularly to a kind of display device with light-emitting diode chip for backlight unit.
Background technology
With the development of digital technology, display device has been widely used in the every aspect of daily life, for example
Which is widely used to the modernization information equipment such as TV, notebook, computer, mobile phone, Smartphone, and this shows dress
Put and constantly develop towards light, thin, short and small and fashion-orientation direction.And this display device includes light emitting display device.
Light emitting diode (LEDs) be using the electron-hole pair in p-n junction in conjunction with (recombination) come
Produce electromagnetic radiation (such as light).In the direct band gap material (direct band gap material) of such as GaAs or GaN
In the P-N junctions of the forward bias voltage drop of formation, inject exhaustion region in electron-hole pair in conjunction with produce electromagnetic radiation.It is above-mentioned
Electromagnetic radiation can be located at visible region or non-visible light area, and the material with different band gap can form luminous the two of different colours
Pole pipe.
In the case where light emitting display device industry now is all strided forward towards the trend of a large amount of productions, any luminous two
The reduction of the production cost of pole pipe display device can all bring huge economic benefit.However, current display device is not each
Aspect is all satisfactory.
Therefore, industry still must a kind of display device that can further reduce manufacturing cost.
The content of the invention
The present invention provides a kind of display device to be included：Multiple transistors；And light-emitting diode chip for backlight unit, correspondence at least two
Transistor is arranged.
Be allow the present invention feature and advantage can become apparent, it is cited below particularly go out preferred embodiment, and coordinate appended by it is attached
Figure, is described in detail below.
Description of the drawings
Figure 1A is the top view of the display device of the embodiment of the present invention；
Figure 1B is the enlarged drawing of the region 1B of the display device of Figure 1A；
Fig. 1 C are the sectional views drawn of line segment 1C-1C along Figure 1B；
Fig. 1 D are the sectional views of the display device of another embodiment of the present invention；
Fig. 1 E are the sectional views of the display device of another embodiment of the present invention；
Fig. 1 F are the sectional views of the display device of another embodiment of the present invention；
Fig. 1 G are the sectional views of the display device of another embodiment of the present invention；
Fig. 1 H are the sectional views of the display device of another embodiment of the present invention；
Fig. 1 I are the sectional views of the display device of another embodiment of the present invention；
Fig. 1 J are the sectional views of the display device of another embodiment of the present invention；
Fig. 2A is the top view of the display device of another embodiment of the present invention；
Fig. 2 B are the sectional views drawn of line segment 2B-2B along Fig. 2A；
Fig. 3 is the present invention to the aobvious of three kinds of possible aspects of the corresponding number of transistors of the light-emitting diode chip for backlight unit enumerated
The top view of showing device；
Fig. 4 A are the top views of the display device of another embodiment of the present invention；
Fig. 4 B are the top views of the display device of another embodiment of the present invention；
Fig. 5 A are the top views of the display device of another embodiment of the present invention；
Fig. 5 B are the top views of the display device of another embodiment of the present invention；
Fig. 6 A are the local top views of the display device of another embodiment of the present invention；
Fig. 6 B are the local top views of the display device of another embodiment of the present invention；
Fig. 6 C are the local top views of the display device of another embodiment of the present invention；
Fig. 6 D are the local top views of the display device of another embodiment of the present invention；
Fig. 6 E are the sectional views drawn of line segment 6E-6E along Fig. 6 D；
Fig. 6 F are the light-emitting diode chip for backlight unit and the exploded view of first substrate of the embodiment along Fig. 6 D；
Fig. 7 A are the local top views of the display device of another embodiment of the present invention；
Fig. 7 B are the local top views of the display device of another embodiment of the present invention；
Fig. 7 C are the local top views of the display device of another embodiment of the present invention；
Fig. 7 D are the local top views of the display device of another embodiment of the present invention；
Fig. 8 A are the local top views of the display device of another embodiment of the present invention；
Fig. 8 B are the local top views of the display device of another embodiment of the present invention；
Fig. 8 C are the local top views of the display device of another embodiment of the present invention；
Fig. 8 D are the local top views of the display device of another embodiment of the present invention；
Fig. 9 A are the local top views of the display device of another embodiment of the present invention；
Fig. 9 B are the local top views of the display device of another embodiment of the present invention；
Fig. 9 C are the local top views of the display device of another embodiment of the present invention；
Fig. 9 D are the local top views of the display device of another embodiment of the present invention；
Figure 10 A are the local top views of the display device of another embodiment of the present invention；
Figure 10 B are the local top views of the display device of another embodiment of the present invention；
Figure 10 C are the local top views of the display device of another embodiment of the present invention；
Figure 10 D are the local top views of the display device of another embodiment of the present invention；
Figure 11 A are the local top views of the display device of another embodiment of the present invention；
Figure 11 B are the local top views of the display device of another embodiment of the present invention；
Figure 11 C are the local top views of the display device of another embodiment of the present invention；
Figure 11 D are the local top views of the display device of another embodiment of the present invention；
Figure 11 E are the local top views of the display device of another embodiment of the present invention；
Figure 12 A are the sectional views of the light-emitting diode chip for backlight unit and substrate of another embodiment of the present invention；
Figure 12 B are the lower views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 13 A are the sectional views of the light-emitting diode chip for backlight unit and substrate of another embodiment of the present invention；
Figure 13 B are the lower views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 14 A are the sectional views of the light-emitting diode chip for backlight unit and substrate of another embodiment of the present invention；
Figure 14 B are the lower views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 15 A are the sectional views of the light-emitting diode chip for backlight unit and substrate of another embodiment of the present invention；
Figure 15 B are the lower views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 16 A are the sectional views of the light-emitting diode chip for backlight unit and substrate of another embodiment of the present invention；
Figure 16 B are the lower views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 17 A are the sectional views of the light-emitting diode chip for backlight unit and substrate of another embodiment of the present invention；
Figure 17 B are the lower views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 18 A are the sectional views of the light-emitting diode chip for backlight unit and substrate of another embodiment of the present invention；
Figure 18 B are the lower views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 19 A are the sectional views of the light-emitting diode chip for backlight unit and substrate of another embodiment of the present invention；
Figure 19 B are the lower views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 20 A are the sectional views of the light-emitting diode chip for backlight unit and substrate of another embodiment of the present invention；
Figure 20 B are the lower views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 21 A are the sectional views of the light-emitting diode chip for backlight unit and substrate of another embodiment of the present invention；
Figure 21 B are the lower views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 22 is the side view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 23 is the side view of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 24 A are the top views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 24 B are the top views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 24 C are the top views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 24 D are the top views of the light-emitting diode chip for backlight unit of another embodiment of the present invention.
Figure 25 A are the top views of the light-emitting diode chip for backlight unit of another embodiment of the present invention；
Figure 25 B are the top views of the light-emitting diode chip for backlight unit of another embodiment of the present invention.
Symbol description
100 display devices；
102 viewing areas；
104 non-display areas；
106 external pins bonding pads；
110 light-emitting diode chip for backlight unit；
112 electrodes；
114 first substrates；
116 transistors；
116A transistors；
116B transistors；
116C transistors；
118 gate electrodes；
120 gate dielectrics；
122 semiconductor layers；
124 source electrodes；
126 drain electrodes；
128 connection electrodes；
130 second substrates；
On front side of 130S1；
130S2 dorsal parts；
132 luminescence units；
132A luminescence units；
132B luminescence units；
132C luminescence units；
132D luminescence units；
132E luminescence units；
132F luminescence units；
134 first electrodes；
136 chromatic filter layers；
136A blue color filter layers；
136B red filter layers；
136C green color filters；
138 fluorescence coatings；
146 quantum dot films；
The first quantum dot films of 146A；
The second quantum dot films of 146B；
The 3rd quantum dot films of 146C；
148 photoluminescent layers；
The first photoluminescent layers of 148A；
The second photoluminescent layers of 148B；
The 3rd photoluminescent layers of 148C；
200 display devices；
210 light-emitting diode chip for backlight unit；
212 the 3rd electrodes；
216 transistors；
216A, 216B, 216C, 216D, 216E, 216F transistor；
228 connection electrodes；
232 luminescence units；
234 first electrodes；
238 second electrodes；
310 light-emitting diode chip for backlight unit；
310A light-emitting diode chip for backlight unit；
310B light-emitting diode chip for backlight unit；
310C light-emitting diode chip for backlight unit；
316 transistors；
400A display devices；
410A light-emitting diode chip for backlight unit；
412 row common electrodes；
416 transistors；
432 luminescence units；
440A the first transistors are arranged；
440B transistor secondses are arranged；
442A the first transistor rows；
442B transistor seconds rows；
The first data wires of 444A；
The second data wires of 444B；
446A first grid polar curves；
446B second gate lines；
448 row common electrodes；
500A display devices；
500B display devices；
516 transistors；
510A light-emitting diode chip for backlight unit；
510B light-emitting diode chip for backlight unit；
540A the first transistors are arranged；
540B transistor secondses are arranged；
600A display devices；
610A light-emitting diode chip for backlight unit；
610B light-emitting diode chip for backlight unit；
614 first substrates；
616A transistors；
616B transistors；
628A connection electrodes；
628B connection electrodes；
632A luminescence units；
632B luminescence units；
632C luminescence units；
632D luminescence units；
634A first electrodes；
634B first electrodes；
636 chromatic filter layers；
638 second electrodes；
646 gate lines；
648A data wires；
648B data wires；
650 row common electrodes；
652A light shield layers；
652B light shield layers；
700A display devices；
710A light-emitting diode chip for backlight unit；
710B light-emitting diode chip for backlight unit；
716A transistors；
716B transistors；
716C transistors；
716D transistors；
726A connection electrodes；
726B connection electrodes；
726C connection electrodes；
726D connection electrodes；
732A luminescence units；
732B luminescence units；
732C luminescence units；
732D luminescence units；
746A gate lines；
746B gate lines；
748A data wires；
748B data wires；
750 row common electrodes；
800A display devices；
810A light-emitting diode chip for backlight unit；
810B light-emitting diode chip for backlight unit；
816A transistors；
816B transistors；
826A connection electrodes；
826B connection electrodes；
832A luminescence units；
832B luminescence units；
846A gate lines；
846B gate lines；
848 data wires；
854 row common electrodes；
900A display devices；
910A light-emitting diode chip for backlight unit；
910B light-emitting diode chip for backlight unit；
916A transistors；
916B transistors；
916C transistors；
916D transistors；
926A connection electrodes；
926B connection electrodes；
926C connection electrodes；
926D connection electrodes；
932A luminescence units；
932B luminescence units；
932C luminescence units；
932D luminescence units；
946A gate lines；
946B gate lines；
948A data wires；
948B data wires；
954 row common electrodes；
1000A display devices；
1010A light-emitting diode chip for backlight unit；
1010B light-emitting diode chip for backlight unit；
1016A transistors；
1016B transistors；
1016C transistors；
1016D transistors；
1026A connection electrodes；
1026B connection electrodes；
1026C connection electrodes；
1026D connection electrodes；
1032A luminescence units；
1032B luminescence units；
1032C luminescence units；
1032D luminescence units；
1046A gate lines；
1046B gate lines；
1048A data wires；
1048B data wires；
1050 row common electrodes；
1054 row common electrodes；
1100A display devices；
1110A light-emitting diode chip for backlight unit；
1110B light-emitting diode chip for backlight unit；
1116A transistors；
1116B transistors；
1116C transistors；
1116D transistors；
1126B connection electrodes；
1126C connection electrodes；
1146 gate lines；
1148A data wires；
1148B data wires；
1148C data wires；
1148D data wires；
1150 row common electrodes；
The first sides of S1；
The second sides of S2；
The first sides of S3；
The second sides of S4；
The first sides of S5；
The second sides of S6；
The 3rd sides of S7；
The 4th sides of S8；
1B regions；
1C-1C line segments；
2B-2B line segments；
6E-6E line segments；
A1 directions；
A2 directions；
1210 light-emitting diode chip for backlight unit；
1232A luminescence units；
1232B luminescence units；
1232C luminescence units；
1232S1 upper surfaces；
1232S2 lower surfaces；
12A1 electrodes；
12A2 electrodes；
12B1 electrodes；
12B2 electrodes；
12C1 electrodes；
12C2 electrodes；
SB substrates；
1310 light-emitting diode chip for backlight unit；
1332A luminescence units；
1332B luminescence units；
1332C luminescence units
13A1 electrodes；
13B1 electrodes；
13C1 electrodes；
13E electrodes；
1410 light-emitting diode chip for backlight unit；
1432A luminescence units；
1432B luminescence units；
1432C luminescence units；
1432D luminescence units；
1432S2 lower surfaces；
14A1 electrodes；
14A2 electrodes；
14B1 electrodes；
14B2 electrodes；
14C1 electrodes；
14C2 electrodes；14D1 electrodes；
14D2 electrodes；
1510 light-emitting diode chip for backlight unit；
1532A luminescence units；
1532B luminescence units；
1532C luminescence units；
1532D luminescence units；
1532S1 upper surfaces；
1532S2 lower surfaces；
15A1 electrodes；
15B1 electrodes；
15C1 electrodes；
15D1 electrodes；
15E electrodes；
1610 light-emitting diode chip for backlight unit；
1632A luminescence units；
1632B luminescence units；
16A1 electrodes；
16B1 electrodes；
16E electrodes；
1710 light-emitting diode chip for backlight unit；
1732A luminescence units；
1732B luminescence units；
1732C luminescence units；
1732S1 upper surfaces；
1738 wavelength conversion material layers；
17A1 electrodes；
17B1 electrodes；
17C1 electrodes；
17E electrodes；1810 light-emitting diode chip for backlight unit；
1832A luminescence units；
1832B luminescence units；
1832C luminescence units；
1838B wavelength conversion material layers；
1838C wavelength conversion material layers；
18A1 electrodes；
18B1 electrodes；
18C1 electrodes；
18E electrodes；
1910 light-emitting diode chip for backlight unit；
1932A luminescence units；
1932B luminescence units；
1932C luminescence units；
1932S1 upper surfaces；
1932S2 lower surfaces；
19A1 electrodes；
19A2 electrodes；
19B1 electrodes；
19B2 electrodes；
19C1 electrodes；
19C2 electrodes；
2010 light-emitting diode chip for backlight unit；
2032A luminescence units；
2032B luminescence units；
2032C luminescence units；
2032S1 upper surfaces；
2032S2 lower surfaces；
20A1 electrodes；
20B1 electrodes；
20C1 electrodes；
20E electrodes；
2110 light-emitting diode chip for backlight unit；
2132A luminescence units；
2132B luminescence units；
2132S1 upper surfaces；
2132S2 lower surfaces；
21A1 electrodes；
21B1 electrodes；
21E electrodes；
2210 light-emitting diode chip for backlight unit；
2232A luminescence units；
2232B luminescence units；
2232C luminescence units；
2232D luminescence units；
2232S1 upper surfaces；
2232S2 lower surfaces；
22A1 electrodes；
22B1 electrodes；
22C1 electrodes；
22D1 electrodes；
22E electrodes；
2310 light-emitting diode chip for backlight unit；
2332A luminescence units；
2332B luminescence units；
2332C luminescence units；
2332D luminescence units；
2332S1 upper surfaces；
2332S2 lower surfaces；
23A1 electrodes；
23A2 electrodes；
23B1 electrodes；
23B2 electrodes；
23C1 electrodes；
23C2 electrodes；
23D1 electrodes；
23D2 electrodes；
2410A light-emitting diode chip for backlight unit；
2410B light-emitting diode chip for backlight unit；
2410C light-emitting diode chip for backlight unit；
2410D light-emitting diode chip for backlight unit；
2432A luminescence units；
2432B luminescence units；
2432C luminescence units；
2510A light-emitting diode chip for backlight unit；
2510B light-emitting diode chip for backlight unit；
2532A luminescence units；
2532B luminescence units；
2532C luminescence units.
Specific embodiment
Elaborate below for the display device of the present invention.It is to be understood that following narration provides many differences
Embodiment or example, to implement the present invention different patterns.The specific element of described below and arrangement mode are only simple
Clearly describe the present invention.Certainly, these are only to illustrate and the restriction of non-invention.Additionally, may make in different embodiments
With the label or sign that repeat.These repeat only for simply clearly describing the present invention, do not represent discussed different enforcements
There is between example and/or structure any association.Furthermore, when address a first material layer in the second material layer or on
When, including first material layer and the situation of second material layer directly contact.Or, it is also possible to it is separated with one or more other materials
The situation of layer, in this case, may be not directly contacted between first material layer and second material layer.
It will be appreciated that the element or device of accompanying drawing can be present with the various forms known to this skilled worker.Additionally,
When certain layer other layers or substrate " on " when, it is possible to refer to " direct " on other layers or substrate, or refer to certain layer in other layers
Or on substrate, or refer to other layers of sandwiched between other layers or substrate.
Additionally, in embodiment may using the term of relativity, such as " relatively low " or " bottom " and " higher " or " top ",
To describe an element of accompanying drawing for the relativeness of another element.It is appreciated that, if the device upset of accompanying drawing is made
Which turns upside down, then the described element in " relatively low " side will become the element in " higher " side.
Here, " about ", " about ", the term of " on the whole " are generally represented within the 20% of a set-point or scope, preferably
It is within 10%, and is more preferably within 5%, or within 3%, or within 2%, or within 1%, or within 0.5%.Here gives
The quantity quantity that is of about, that is, in the case of no certain illustrated " about ", " about ", " on the whole ", can still imply "
About ", " about ", the implication of " on the whole ".
It is appreciated that, although here can describe various elements, group using term " first ", " second ", " the 3rd " etc.
Into composition, region, layer and/or part, these elements, constituent, region, layer and/or part should not be limited by these terms
It is fixed, and these terms are intended merely to the different elements of difference, constituent, region, layer and/or part.Therefore, following discussion
One first element, constituent, region, layer and/or part can be referred to as one in the case of without departing from teachings of the present invention
Second element, constituent, region, layer and/or part.
Unless otherwise defined, whole terms (including technology and scientific words) as used herein discloses affiliated with this piece
The identical connotation that is generally understood that of general technology person.Be appreciated that these terms, such as it is fixed in the dictionary being usually used
The term of justice, should be interpreted to a meaning consistent with the background or context of correlation technique and the present invention, and should not be with
One idealization or excessively formal mode are understood, unless here is especially defined.
The embodiment of the present invention can coordinate accompanying drawing to understand in the lump, and the accompanying drawing of the present invention is also regarded as disclosing a part for explanation.
It is to be understood that the accompanying drawing of the present invention is not with actual device and the scale of element.Embodiment may be exaggerated in the accompanying drawings
Shape and thickness clearly to show the feature of the present invention.Additionally, the structure and device in accompanying drawing is painted in a schematic manner
Show, clearly to show the feature of the present invention.
In the present invention, the term of relativity such as D score, " on ", " level ", " vertical ", " under ", " on ", " top
Portion ", " bottom " etc. should be understood depicted orientation in this section and relevant drawings.The term of this relativity merely to
Facilitate purposes of discussion, which does not represent its device for being described and need to be manufactured or be operated with particular orientation.And with regard to engagement, connection
Term for example " connect ", " interconnection " etc., unless defined, can otherwise refer to two structure directly contacts, or can also refer to two
Individual structure non-direct contact, wherein have other structures to be located between this two structures.And this is with regard to engagement, the term of connection
May include that two structures all may move, or the situation that two structures are all fixed.
It should be noted that " substrate " word may include on semiconductor wafer established element and be covered in crystalline substance below
Various film layers on piece, thereon side can be formed it is any needed for semiconductor element, but here for simplify accompanying drawing, only with
Smooth substrate represents it.Additionally, " substrate surface " includes the top and exposed film layer, such as a silicon table on semiconductor wafer
Face, an insulating barrier and/or metal wire.
The embodiment of the present invention makes the light-emitting diode chip for backlight unit correspondence at least two transistors setting in display device, to reduce
The quantity of the light-emitting diode chip for backlight unit used in display device.Therefore light-emitting diode chip for backlight unit of fitting during manufacture craft can be reduced
Number of times, therefore manufacture craft time and manufacture craft cost can be reduced, and lift yield.
Referring to Figure 1A-Figure 1B, Figure 1A is the top view of the display device 100 of the embodiment of the present invention, and Figure 1B is Figure 1A
The enlarged drawing of the region 1B of display device 100.As shown in Figure 1A, display device 100 includes viewing area 102 and adjacent display areas
102 non-display area 104.In this embodiment, non-display area 104 surrounds viewing area 102.This viewing area 102 refers to display device
The viewing area of transistor is provided with 100.More broadly says, viewing area 102 refers to display device 100 and deducts non-display area
Part, and this transistor can for example be thin film transistor (TFT).Additionally, this non-display area 104 may include an external pins bonding pad
(Out Lead Bonding, OLB) 106.
Referring to Figure 1A-Figure 1B, display device 100 can be a light emitting display device.This display device 100 includes many
The light-emitting diode chip for backlight unit 110 that individual transistor 116 and correspondence at least two transistor 116 are arranged, in the embodiment of the present invention be
The light-emitting diode chip for backlight unit 110 that three transistors (such as 116A, 116B or 116C) of correspondence are arranged.Display device 100 also includes
Community electrode 112.
The embodiment of the present invention makes the three transistors settings of a light-emitting diode chip for backlight unit correspondence in display device, to reduce
The quantity of the light-emitting diode chip for backlight unit used in display device, and in manufacture craft then light-emitting diode chip for backlight unit time
Number, therefore manufacture craft cost and manufacture craft time can be reduced, and lift yield.
Fig. 1 C are the sectional views drawn of line segment 1C-1C along Figure 1B.Referring to Fig. 1 C, display device 100 includes first
Substrate 114, this first substrate 114 can be a transistor base.This can be transparent for one as the first substrate 114 of transistor base
Substrate, its material can for example be glass substrate, ceramic substrate, plastic substrate or other any suitable transparency carriers.Additionally, the
It is provided with to control the luminous transistor 116 of light-emitting diode chip for backlight unit 110, such as thin film transistor (TFT) on one substrate 114.
The form of transistor 116 can be lower grid or upper grid.Specifically, referring to Fig. 1 C, the crystal of lower gate form
Pipe 116 may include gate electrode 118, gate dielectric 120, semiconductor layer 122, source electrode 124 and drain electrode 126.This
Gate electrode 118 is on first substrate 114, and this gate dielectric 120 is covered in this gate electrode 118 and first substrate
On 114, this semiconductor layer 122 on this gate dielectric 120, and to should gate electrode 118 arrange.This source electrode
124 is on semiconductor layer 122 and overlap with part of semiconductor layer 122.This drain electrode 126 is also located at semiconductor layer 122
On, and it is overlap with another part semiconductor layer 122.It is ripe for those skilled in the art as the transistor 116 of upper gate form
Know, therefore repeat no more its structure.
The material of gate electrode 118 may include copper, aluminium, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, above-mentioned alloy, on
The good metal material of the combination stated or other electric conductivity.In other embodiments, the material of above-mentioned gate electrode 118 can be non-for one
Metal material, if using material there is electric conductivity.Gate electrode 118 may be electrically connected to gate line.
Gate dielectric 120 can be silica, silicon nitride, silicon oxynitride, silicomethane, high-k (high-k) dielectric
Material or other any suitable dielectric materials or combinations of the above.The material of this high-k (high-k) dielectric material
Can be metal oxide, metal nitride, metal silicide, transition metal oxide, transition metal nitride, transition metal silicon
Compound, the nitrogen oxides of metal, metal aluminate, zirconium silicate, zircoaluminate.For example, this high-k (high-k) is situated between
Electric material can be LaO, AlO, ZrO, TiO, Ta2O5、Y2O3、SrTiO3(STO)、BaTiO3(BTO)、BaZrO、HfO2、HfO3、
HfZrO、HfLaO、HfSiO、HfSiON、LaSiO、AlSiO、HfTaO、HfTiO、HfTaTiO、HfAlON、(Ba,Sr)TiO3
(BST)、Al2O3, other suitable materials other high-k dielectric materials or combinations thereof.This dielectric materials layer can pass through
Chemical vapour deposition technique (CVD) or method of spin coating are formed, and this chemical vapour deposition technique can for example be low-pressure chemical vapor deposition
Method (lowpressure chemical vapor deposition, LPCVD), low temperature chemical vapor deposition method
(lowtemperature chemical vapor deposition, LTCVD), be rapidly heated chemical vapour deposition technique (rapid
Thermal chemical vapor deposition, RTCVD), plasma auxiliary chemical vapor deposition method (plasma
Enhanced chemical vapor deposition, PECVD), the atomic layer deposition method of atomic layer chemical vapor deposition method
(atomic layer deposition, ALD) or other conventional methods.
Semiconductor layer 122 may include to be elemental semiconductor, including non-crystalline silicon (amorphous-Si), polysilicon (poly-
Si), germanium (germanium)；Compound semiconductor, including gallium nitride (gallium nitride, GaN), carborundum (silicon
Carbide), GaAs (gallium arsenide), gallium phosphide (gallium phosphide), indium phosphide (indium
Phosphide), indium arsenide (indium arsenide) and/or indium antimonide (indium antimonide)；Alloy semiconductor,
Including sige alloy (SiGe), phosphorus arsenic gallium alloy (GaAsP), arsenic aluminium indium alloy (AlInAs), arsenic aluminum gallium alloy (AlGaAs), arsenic
Indium gallium alloy (GaInAs), phosphorus indium gallium alloy (GaInP) and/or phosphorus arsenic indium gallium alloy (GaInAsP)；Metal oxide, including
Indium gallium zinc (IGZO), indium zinc oxide (IZO), indium gallium tin zinc (IGZTO)；Organic semiconductor, including polycyclic aromatic
Compound, or the combination of above-mentioned material.
The material of source electrode 124 and drain electrode 126 may include copper, aluminium, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, on
The good metal material of alloy, combinations of the above or other electric conductivity for stating.In other embodiments, 124 He of above-mentioned source electrode
The material of drain electrode 126 can be nonmetallic materials, as long as using material there is electric conductivity.Source electrode 124 can
It is electrically connected to a data wire.
Transistor 116 can also include the connection electrode 128 on first substrate 114, and this connection electrode 128 is electrically connected to
Drain electrode 126.Additionally, drain electrode 126 also can be used directly as connection electrode 128, making in addition can be so not required to
Connection electrode 128.
This connection electrode 128 includes any conductive material, for example, copper, aluminium, tungsten, gold, chromium, nickel, platinum, titanium, iridium,
Rhodium, above-mentioned alloy, or indium tin oxide (ITO) tin oxide (TO), indium zinc oxide (IZO), indium gallium zinc (IGZO), oxidation
Indium tin zinc (ITZO), antimony tin (ATO), antimony oxide zinc (AZO), combinations of the above or other any suitable electrically conducting transparent oxygen
Compound material.
Display device 100 also includes the second substrate 130 being oppositely arranged with this first substrate 114.This second substrate 130 can
Including glass substrate, ceramic substrate, plastic substrate or other any suitable transparency carriers.Additionally, light-emitting diode chip for backlight unit 110
There is between second substrate 130 gap, this gap is by the sept that is arranged in viewing area 102, or is arranged at non-aobvious
Show caused by the sept in area 104, this sept can prevent light-emitting diode chip for backlight unit 110 from connecing when display device 100 is pressed
Tactile second substrate 130 and damage.Here is disclosed in embodiment, and the material of the sept is photosensitive organic material.
Additionally, the light-emitting diode chip for backlight unit 110 of this display device 100 is located at above-mentioned first substrate 114 and second substrate 130
Between.This light-emitting diode chip for backlight unit 110 includes multiple luminescence units 132.Luminescence unit 132 may include ultraviolet light-emitting diodes
Luminescence unit, blue light-emitting diode luminescence unit, green light LED luminescence unit, red light-emitting diode luminescence unit
Or other any suitable LED units.
In the embodiment shown in Figure 1B-Fig. 1 C, light-emitting diode chip for backlight unit 110 includes three luminescence units 132A, 132B
And 132C, it is electrically connected three transistors 116A, 116B and 116C.Luminescence unit 132A is electrically connected by a first electrode 134
Connection electrode 128 is connected to, and common electrode 112 is electrically connected to by a second electrode.This common electrode 112 includes any leading
The material of electricity, for example, copper, aluminium, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, above-mentioned alloy, or indium tin oxide (ITO) oxidation
Tin (TO), indium zinc oxide (IZO), indium gallium zinc (IGZO), indium tin zinc oxide (ITZO), antimony tin (ATO), antimony oxide zinc
(AZO), combinations of the above or other any suitable transparent conductive oxide materials.
Additionally, electric current flows into luminescence unit 132A via transistor 116A and first electrode 134, and flowed out by second electrode
Luminescence unit 132A, thus allows luminescence unit 132A to light.In embodiments of the present invention, the material of luminescence unit can for it is any
Know or electroluminescent material possible in theory, such as inorganic light-emitting diode or Organic Light Emitting Diode.
Additionally, in the embodiment shown in Figure 1B-Fig. 1 C, the correspondence of light-emitting diode chip for backlight unit 110 is set to multiple transistors 116
Put, and this light-emitting diode chip for backlight unit 110 includes two luminescence units for sending different colours respectively, in the present invention, light single
The color that unit can send is not restricted to red green blue tricolor, and other can be produced by electroluminescent cell in theory or actually
Color all may be used.For example, in certain embodiments, the electrically connected luminescence unit 132A of transistor 116A send blue light, transistor
The luminescence unit 132B electrically connected by 116B sends ruddiness, and the luminescence unit 132C electrically connected by transistor 116C sends green glow.
In other embodiments, three luminescence units 132A, 132B and 132C can have different from putting in order shown in Fig. 1 C.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 1 C, in the present invention, the multiple transistors of correspondence are arranged
Light-emitting diode chip for backlight unit may also comprise and send a kind of luminescence unit of color, as shown in the embodiment of Fig. 1 D- Fig. 1 E.The present invention's
Scope is not limited with the embodiment shown in Fig. 1 C.It should be noted that hereinafter with same or analogous element or film layer above
To be represented with same or analogous label, its material, manufacture method and function are all same or similar with described previously, so part
Will not be described in great detail below.
Fig. 1 D are the sectional views of the display device of another embodiment of the present invention.Referring to Fig. 1 D, a light-emitting diode chip for backlight unit
110 corresponding multiple transistors 116 are arranged, and this light-emitting diode chip for backlight unit 110 includes sending a kind of luminescence unit of color.Yi Yan
It, the light-emitting diode chip for backlight unit 110 of Fig. 1 D correspondence three transistors 116A, 116B and 116C are arranged, and be electrically connected this three
Luminescence unit 132D, 132E, 132F of individual transistor 116A, 116B and 116C all sends the light of same color, for example ruddiness, green
Light, blue light, white light, but be not limited thereto.
Additionally, in this embodiment, light-emitting diode chip for backlight unit 110 includes the luminescence unit for sending white light, display device 100
Also include the chromatic filter layer 136 on second substrate 130.In one embodiment, this chromatic filter layer 136 may include blueness
Filter layer 136A, red filter layer 136B, green color filter 136C, correspond to luminescence unit 132D, 132E, 132F respectively.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 1 D, the chromatic filter layer of the present invention is also replaceable for which
His film layer, as shown in the embodiment of Fig. 1 E.The scope of the present invention is not limited with the embodiment shown in Fig. 1 D.
Fig. 1 E are the sectional views of the display device of another embodiment of the present invention.In this embodiment, display device 100 is also wrapped
Include the quantum dot film 146 on second substrate 130, this quantum dot film 146 include the first quantum dot film 146A, second
Quantum dot film 146B and the 3rd quantum dot film 146C, corresponds to luminescence unit 132D, 132E, 132F, and luminescence unit respectively
132D, 132E, 132F all send the light of same color, and such as wavelength is the blue light of 380～500nm.
The material of this quantum dot film 146 may include the organic layer or inorganic layer of blending quantum dot (quantum dot), this
Quantum dot is the nanometer three-dimensional structure that a composition includes zinc, cadmium, selenium, sulphur or its combination.The particle diameter of this quantum dot is about 1nm-
10nm.By adjusting the particle diameter of quantum dot, quantum dot film 146 can be changed by light source (for example：Wavelength is the indigo plant of 380～500nm
Light) excite after produced by light frequency spectrum.For example, blending has the first quantum dot film 146A of the quantum dot of the first particle diameter blue
Light can produce the first color of light after exciting, the second quantum dot film 146B that blending has the quantum dot of the second particle diameter is stimulated by blue light
After can produce the second color of light, the 3rd quantum dot film 146C that blending has the quantum dot of the 3rd particle diameter can be produced after being stimulated by blue light
Raw 3rd color of light, wherein, the first color of light, the second color of light have different frequency spectrums respectively from the 3rd color of light.
Fig. 1 F are the sectional views of the display device for disclosing another embodiment.In this embodiment, this quantum dot film 146 is wrapped
The second quantum dot film 146B and the 3rd quantum dot film 146C is included, luminescence unit 132E, 132F is corresponded to respectively.This quantum dot is thin
Film 146 can be by saving the first quantum dot film 146A of correspondence luminescence unit 132D come material-saving cost, and luminescence unit
132D, 132E, 132F all send the light of same color, and such as wavelength is the blue light of 380～500nm.
Fig. 1 G are the sectional views of the display device of another embodiment of the present invention.In this embodiment, luminescence unit 132D,
132E, 132F all send the light of same color, such as light of blue light, ultraviolet light or any other suitable color.Display device
100 include the chromatic filter layer 136 on second substrate 130.In one embodiment, this chromatic filter layer 136 may include indigo plant
Color filtering optical layer 136A, red filter layer 136B, green color filter 136C, correspond to luminescence unit 132D, 132E, 132F respectively.Send out
Photoluminescent layers 138 can be formed with luminous diode chip 110.And the light that luminescence unit 132D, 132E, 132F send is passed through
White light is produced after photoluminescent layers 138, and white light can produce the light of different colours again through chromatic filter layer 136.This photic
Photosphere 138 may include fluorescence coating, phosphorescent layer, aforementioned quantum dot film or other any suitable embedded photoluminescent materials.It is above-mentioned glimmering
The material of photosphere can be aluminate (Aluminate), silicate (Silicate), nitride (Nitride), nitrogen oxides
(Oxynitride), sulfide, halide, combinations of the above or other any suitable fluorescent materials.
Additionally, second substrate 130 has the front side 130S1 and dorsal part 130S2 of opposition side each other.It should be noted that, although
Front side 130S1 of the chromatic filter layer 136 of Fig. 1 G located at second substrate 130, but this chromatic filter layer 136 can also be located at second
The dorsal part 130S2 of substrate 130.Or, in other embodiments, this chromatic filter layer 136 can be located at light-emitting diode chip for backlight unit 110
To any suitable position between the dorsal part 130S2 of second substrate 130, and now second substrate 130 is display device 100 in going out
Outermost carrier on light direction.
Fig. 1 H are the sectional views of the display device for disclosing another embodiment.In this embodiment, this chromatic filter layer 136 is wrapped
Red filter layer 136B and green color filter 136C is included, luminescence unit 132E, 132F is corresponded to respectively.This chromatic filter layer 136 can
By saving the first chromatic filter layer 136A of correspondence luminescence unit 132D come material-saving cost.This photoluminescent layers 138
Can be by saving the part of correspondence luminescence unit 132D come further material-saving cost.And luminescence unit 132D, 132E, 132F
The light of same color, such as light of blue light or any other suitable color are sent all.
Fig. 1 I are the sectional views of the display device of another embodiment of the present invention.In this embodiment, display device 100 includes
Photoluminescent layers 148 on light-emitting diode chip for backlight unit 110, this photoluminescent layers 148 include the first photoluminescent layers 148A,
Second photoluminescent layers 148B and the 3rd photoluminescent layers 148C, corresponds to luminescence unit 132D, 132E, 132F respectively, and luminous
Unit 132D, 132E, 132F all send the light of same color, such as blue light, ultraviolet light or any other suitable color
Light.
This photoluminescent layers 148 may include fluorescence coating, phosphorescent layer, aforementioned quantum dot film or other any suitable light
Electroluminescent material, and luminescence unit 132D, 132E, 132F are by (that is, the first photoluminescent layers of this three photoluminescent layers 148
148A, the second photoluminescent layers 148B and the 3rd photoluminescent layers 148C) produce three kinds of colors light (such as blue light, ruddiness and
Green glow).
It should be noted that, although the photoluminescent layers 148 of Fig. 1 I are on light-emitting diode chip for backlight unit 110, but this is photic
Luminescent layer 148 also can be in light-emitting diode chip for backlight unit 110.Or, in other embodiments, can be by the light of this photoluminescent layers
Electroluminescent material is mixed in array base palte (including elements such as first substrate 114, transistor 116 and light-emitting diode chip for backlight unit 110)
In glue material when fitting with second substrate 130.Or, in other embodiments, before second substrate 130 has opposition side each other
Side 130S1 and dorsal part 130S2, and this photoluminescent layers 148 can be located at the front side 130S1 or dorsal part 130S2 of second substrate 130.
Or, in other embodiments, this chromatic filter layer 136 can be located at the dorsal part of light-emitting diode chip for backlight unit 110 to second substrate 130
Any suitable position between 130S2, and now second substrate 130 is the outermost load on light direction of display device 100
Body.
Fig. 1 J are the sectional views of the display device for disclosing another embodiment.In this embodiment, this photoluminescent layers 148 is wrapped
The second photoluminescent layers 148B and the 3rd photoluminescent layers 148C is included, luminescence unit 132E, 132F is corresponded to respectively.This luminescence generated by light
Layer 148 can be by saving the first photoluminescent layers 148A of correspondence luminescence unit 132D come material-saving cost, and luminescence unit
132D, 132E, 132F all send the light of same color, such as light of blue light or any other suitable color.
Some embodiments of the invention are to send the light-emitting diode chip for backlight unit of different colours (such as red, blue, green)
On array base palte.However, due to the variation in production process, even between the light-emitting diode chip for backlight unit of same color still
There are the difference of frequency spectrum.And before light-emitting diode chip for backlight unit is engaged in array base palte, need to select that there is suitably luminous frequency spectrum
Light-emitting diode chip for backlight unit, and the light-emitting diode chip for backlight unit of different colours when engaging, need to be engaged respectively, therefore cause the production time to increase
Plus.Therefore, light-emitting diode chip for backlight unit of some embodiments of the invention by using solid color, and coordinate chromatic filter layer and/
Or photoluminescent layers, to reach true color and the production time can be greatly reduced.
Additionally, as illustrated in figs, light-emitting diode chip for backlight unit 110 is completely covered viewing area.Additionally, this light-emitting diodes
The 3N transistor 116 of correspondence of die 110 is arranged, and wherein N is more than 1 positive integer.As white is by three primary colors (red, indigo plant
Color and green) constituted, therefore the number of 110 corresponding transistor 116 of light-emitting diode chip for backlight unit is set as into 3N, in theory
The usage quantity of light-emitting diode chip for backlight unit 110 can be optimized, for example in fig. ib, this correspondence of light-emitting diode chip for backlight unit 110 three
Transistor 116A, 116B, 116C are arranged.
Fig. 2A is the top view of the display device 200 of another embodiment of the present invention.As shown in Figure 2 A, light-emitting diode chip for backlight unit
210 correspondence 6 transistors 216A, 216B, 216C, 216D, 216E, 216F are arranged.
Additionally, referring to Fig. 2 B, the figure is the sectional views drawn of line segment 2B-2B along Fig. 2A.Luminescence unit 232 passes through
One first electrode 234 is electrically connected to connection electrode 228 and transistor 216, and is electrically connected to jointly by another second electrode 238
Electrode 212.Additionally, electric current flows into luminescence unit 232 via transistor 216 and first electrode 234, and flowed by second electrode 238
Go out luminescence unit 232, and thus allow luminescence unit 232 to light.
It should be noted that in addition to the embodiment shown in above-mentioned Figure 1A-Fig. 2 B, the light-emitting diode chip for backlight unit of the present invention also may be used
The transistor of corresponding other quantity is arranged, as illustrated in the exemplary embodiment of figure 3.The scope of the present invention is not with shown in Figure 1A-Fig. 2 B
Embodiment is limited.
Fig. 3 is the present invention to the aobvious of three kinds of possible aspects of the corresponding number of transistors of the light-emitting diode chip for backlight unit enumerated
The top view of showing device, the corresponding number of transistors of light-emitting diode chip for backlight unit can change according to demand, not with above-mentioned three kinds
It is limited.Wherein 2N transistor 316 of the correspondence of light-emitting diode chip for backlight unit 310 is arranged, and wherein N is more than 1 positive integer.For example, send out
Luminous diode chip 310A 16 transistors 316 of correspondence are arranged；Light-emitting diode chip for backlight unit 310B 4 transistors 316 of correspondence are arranged；
Light-emitting diode chip for backlight unit 310C 4 transistors 316 of correspondence are arranged.Light-emitting diode chip for backlight unit 310B and light-emitting diode chip for backlight unit 310C
The quantity of corresponding transistor 316 is although identical, but light-emitting diode chip for backlight unit 310B includes sending a kind of the luminous of color of light
Unit, light-emitting diode chip for backlight unit 310C then include the two or more luminescence units that can send different colours light respectively.
It should be noted that in addition to the embodiment shown in above-mentioned Figure 1A-Fig. 3, the present invention is located at the transistor of different lines
A common electrode can be shared, as shown in the embodiment of Fig. 4 A- Fig. 4 B.The scope of the present invention is not with the reality shown in Figure 1A-Fig. 3
Apply example to be limited.
Fig. 4 A are the top views of display device 400A of another embodiment of the present invention.Display device 400A includes first crystal
Pipe row 440A and transistor seconds row 440B, and the first transistor row 440A and transistor seconds row 440B includes multiple crystalline substances respectively
Body pipe 416.The first transistor row 440A electrically connects a first grid polar curve 446A.Transistor seconds row 440B electrically connects a second gate
Polar curve 446B.
Display device 400A also includes the row common electrode between first grid polar curve 446A and second gate line 446B
412, and light-emitting diode chip for backlight unit 410A correspondence the first transistor row 440A and transistor seconds row 440B settings.And light-emitting diodes
Die 410A includes multiple luminescence units 432.And this multiple luminescence unit 432 all electrically connects row common electrode 412.In detail and
Speech, the second electrode of this multiple luminescence unit 432 all electrically connect the row common electrode 412 on first substrate 114.And this multiple
The first electrode of light unit 432 is then respectively electrically connected to the drain electrode of corresponding transistor 416.
For example, in one embodiment, as shown in Figure 4 A, this light-emitting diode chip for backlight unit 410A correspondences the first transistor row 440A
And wherein four transistors 416 in transistor seconds row 440B are arranged.And four luminous lists of light-emitting diode chip for backlight unit 410A
Unit 432 is electrically connected this four transistors 416, and all electrically connects row common electrode 412.Specifically, this four luminous lists
The second electrode of unit 432 all electrically connects the row common electrode 412 on first substrate 114.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 4 A, the transistor AND gate light-emitting diode chip for backlight unit of the present invention
Can also there is other configurations mode, as shown in the embodiment of Fig. 4 B.The scope of the present invention is not limited with the embodiment shown in Fig. 4 A.
Fig. 4 B are the top views of display device 400A of another embodiment of the present invention.Display device 400A includes first crystal
Pipe row 442A and transistor seconds row 442B, and the first transistor row 442A and transistor seconds row 442B includes multiple crystalline substances respectively
Body pipe 416.The first transistor row 442A electrically connects one first data wire 444A, and transistor seconds row 442B electrical connections one second are counted
According to line 444B.
Display device 400A also includes the row common electrode between the first data wire 444A and the second data wire 444B
448, in this embodiment, as shown in Figure 4 B, this light-emitting diode chip for backlight unit 410A correspondence the first transistor row 442A and second brilliant
Wherein four transistors 416 in body pipe row 442B are arranged.And four luminescence units 432 of light-emitting diode chip for backlight unit 410A are distinguished
Electrically connect this four transistors 416 to arrange, and all electrically connect row common electrode 448.Specifically, this four luminescence units 432
Second electrode all electrically connect the row common electrode 448 on first substrate 114.
In the present invention, the direction for " arranging " indication is the direction parallel with the gate line of display device, and " OK " indication
Direction is the direction vertical with the gate line of display device.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 4 A- Fig. 4 B, the light-emitting diode chip for backlight unit of the present invention also may be used
There is other configurations mode, as shown in the embodiment of figure 5 a.The scope of the present invention with the embodiment shown in Fig. 4 A- Fig. 4 B is not
Limit.It should be noted that hereinafter will be represented with same or analogous label with same or analogous element above or film layer, its material
Material, manufacture method and function are all same or similar with described previously, so part will not be described in great detail below.
Fig. 5 A are the top views of display device 500A of another embodiment of the present invention.Embodiment and earlier figures shown in Fig. 5 A
The something in common of the embodiment of 4A- Fig. 4 B is that light-emitting diode chip for backlight unit 510A four transistors 516 of correspondence are arranged, extremely
It is that light-emitting diode chip for backlight unit 510A parts cover viewing area 102 in difference.
In the present invention, light-emitting diode chip for backlight unit 510A parts cover viewing area 102, and light-emitting diode chip for backlight unit 510A covers
The ratio of lid viewing area 102, can be tried to achieve using following computational methods：Light-emitting diode chip for backlight unit 510A in viewing area throws
Shadow to first substrate 114 has chip projected area A, and viewing area 102 projects to first substrate 114 and shows perspective plane with one
Product B, and the ratio is chip projected area A and shows the ratio A/B of projected area B.
Wherein, chip projected area A be single light-emitting diode chip for backlight unit project to the area of first substrate 114 be multiplied by send out
A number of luminous diode chip.As for the area for showing projected area B as viewing area well-known to those skilled in the art 102
(not deducting the area accounted for by the black matrix" in viewing area 102).
In the present invention, chip projected area A and show the ratio A/B of projected area B between 0～1.
Fig. 5 B are the top views of display device 500B of another embodiment of the present invention.Embodiment and earlier figures shown in Fig. 5 B
The difference of the embodiment of 5A is light-emitting diode chip for backlight unit 510B correspondence the second crystal of permutation the first transistor row 540A and permutation
Pipe row 540B is arranged.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 4 A- Fig. 4 B, the transistor AND gate light emitting diode of the present invention
Chip can also have other configurations mode, as shown in the embodiment of Fig. 6 A- Figure 11 E.The scope of the present invention is not with Fig. 4 A- Fig. 4 B institutes
The embodiment shown is limited.It should be noted that hereinafter will be with same or analogous with same or analogous element above or film layer
Label represents that its material, manufacture method and function are all same or similar with described previously, so part no longer will be gone to live in the household of one's in-laws on getting married below
State.
Fig. 6 A are the local top views of display device 600A of another embodiment of the present invention.As shown in Figure 6A, display device
Multiple transistors of 600A include the first transistor 616A and transistor seconds 616B.
Additionally, display device 600A includes gate line 646 and two data line 648A and 648B, and thus gate line
646 and two data line 648A and 648B control the first transistor 616A and transistor seconds 616B.This gate line 646 along
Direction A1 extends, and two data line 648A, 648B extend along direction A2.Additionally, display device 600A includes one positioned at two
Row common electrode 650 between data line 648A, 648B, equally extends along direction A2.
Light-emitting diode chip for backlight unit 610A correspondence the first transistor 616A and transistor seconds 616B are arranged, and light emitting diode
Chip 610A includes the first luminescence unit 632A and the second luminescence unit 632B, and this first luminescence unit 632A and second is luminous single
First 632B is respectively electrically connected to the first transistor 616A and transistor seconds 616B, and the first luminescence unit 632A and second is luminous
Unit 632B is all electrically connected to row common electrode 650.
Additionally, in the embodiment shown in Fig. 6 A, although light-emitting diode chip for backlight unit 610A parts cover viewing area 102, but
Light-emitting diode chip for backlight unit 610A is completely covered transistor 616A, 616B corresponding to which.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 6 A, the transistor of the present invention can also have other configurations side
Formula, as shown in the embodiment of Fig. 6 B- Fig. 6 C.The scope of the present invention is not limited with the embodiment shown in Fig. 6 A.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 6 A- Fig. 6 C, the light-emitting diode chip for backlight unit of the present invention also may be used
There is other configurations mode, as shown in the embodiment of Fig. 6 D, light-emitting diode chip for backlight unit 610B parts covering viewing area 102, luminous two
Pole pipe chip 610B also partly covers transistor 616A, the 616B corresponding to which.For more detailed, light-emitting diode chip for backlight unit
Connection electrode 628A, 628B of 610B covering transistor 616A, 616B.But there is no the reality of connection electrode 628A, 628B at other
Apply in example, the drain electrode of light-emitting diode chip for backlight unit 610B covering transistor 616A, 616B.
Fig. 6 E are the sectional views drawn of line segment 6E-6E along Fig. 6 D.As shown in the embodiment of Fig. 6 E, not by luminous two
Transistor 616A, the 616B for the part that pole pipe chip 610B is covered is blocked layer 652A and 652B and covers.This light shield layer 652A
And 652B is on chromatic filter layer 636.Additionally, the luminescence unit 632C and 632D of this light-emitting diode chip for backlight unit 610B all pass through
Same second electrode 638 is electrically connected to row common electrode 650.But in other embodiments, luminescence unit 632C and 632D also may be used
There is respective second electrode 638.
The material of this light shield layer 652A and 652B can for black photoresist, black printed ink, black resin or its
Its any suitable light screening material and color.
Fig. 6 F are the light-emitting diode chip for backlight unit and the exploded view of first substrate of the embodiment of Fig. 6 D of the present invention.Fig. 6 F are illustrated and are sent out
First electrode 634A, 634B of luminous diode chip 610B and second electrode 638.Fig. 6 F also illustrate the crystalline substance on first substrate 614
Body pipe 616A and 616B, connection electrode 628A and 628B, row common electrode 650, gate line 646 and two data line 648A and
648B。
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 6 A- Fig. 6 F, the light-emitting diode chip for backlight unit of the present invention also may be used
There is other configurations mode, as shown in the embodiment of Fig. 7 A- Fig. 7 D.The scope of the present invention is not with the enforcement shown in Fig. 6 A- Fig. 6 F
Example is limited.Fig. 7 A are the local top views of display device 700A of the embodiment of the present invention.As shown in Figure 7 A, display device 700A bag
Include the first transistor 716A, transistor seconds 716B, third transistor 716C and the 4th transistor 716D.
Additionally, display device 700A includes two gate lines 746A, 746B and two data line 748A, 748B, and by
This two gate lines 746A, 746B and two data line 748A, 748B control the first transistor 716A, transistor seconds
716B, third transistor 716C and the 4th transistor 716D.
Additionally, display device 700A includes row common electrode 750, this journey common electrode 750 has the of opposition side each other
Side S1 and the second side S2.The first transistor 716A and transistor seconds 716B is located at the first side S1 of row common electrode 750, the
Second side S2s of the three transistor 716C and the 4th transistor 716D located at row common electrode 750.
Light-emitting diode chip for backlight unit 710A correspondence the first transistor 716A, transistor seconds 716B, third transistor 716C and
4th transistor 716D arrange, and light-emitting diode chip for backlight unit 710A include the first luminescence unit 732A, the second luminescence unit 732B,
3rd luminescence unit 732C and the 4th luminescence unit 732D, be electrically connected the first transistor 716A, transistor seconds 716B,
Three transistor 716C and the 4th transistor 716D.This first luminescence unit 732A, the second luminescence unit 732B, the 3rd luminescence unit
732C and the 4th luminescence unit 732D are all electrically connected to row common electrode 750.
Additionally, in the embodiment shown in Fig. 7 A, although light-emitting diode chip for backlight unit 710A parts cover viewing area 102, but
Light-emitting diode chip for backlight unit 710A is completely covered transistor 716A, 716B, 716C, 716D corresponding to which.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 7 A, the transistor of the present invention can also have other configurations side
Formula, as shown in the embodiment of Fig. 7 B- Fig. 7 C.The scope of the present invention is not limited with the embodiment shown in Fig. 7 A.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 7 A- Fig. 7 C, the light-emitting diode chip for backlight unit of the present invention also may be used
There is other configurations mode, as shown in the embodiment of Fig. 7 D.The scope of the present invention with the embodiment shown in Fig. 7 A- Fig. 7 C is not
Limit.
Embodiment shown in Fig. 7 D is light-emitting diode chip for backlight unit 710B portions with the difference of the embodiment of earlier figures 7A- Fig. 7 C
Point cover viewing area 102, light-emitting diode chip for backlight unit 710B also partly cover transistor 716A corresponding to which, 716B, 716C,
716D.For more detailed, the connection electrode of light-emitting diode chip for backlight unit 710B covering transistor 716A, 716B, 716C, 716D
726A、726B、726C、726D.But in other do not have the embodiment of connection electrode 726A, 726B, 726C, 726D, luminous two
The drain electrode of pole pipe chip 610B covering transistor 716A, 716B, 716C, 716D.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 6 A- Fig. 7 D, the common electrode of the present invention can also have other
Configuration mode, as shown in the embodiment of Fig. 8 A- Fig. 8 D.The scope of the present invention is not limited with the embodiment shown in Fig. 6 A- Fig. 7 D.
It should be noted that hereinafter will be represented with same or analogous label with same or analogous element above or film layer, its material,
Manufacture method is same or similar all with described previously with function, so part will not be described in great detail below.
Fig. 8 A are the local top views of display device 800A of the embodiment of the present invention.As shown in Figure 8 A, display device 800A
Multiple transistors include the first transistor 816A and transistor seconds 816B.
Additionally, display device 800A includes two gate lines 846A, 846B and data wire 848, and thus two grids
Line 846A, 846B and the control the first transistor 816A and transistor seconds 816B of data wire 848.
Additionally, display device 800A includes row common electrode 854, and the first transistor 816A and transistor seconds 816B point
Not Wei Yu row common electrode 854 opposite side.And light-emitting diode chip for backlight unit 810A correspondence the first transistor 816A and the second crystal
Pipe 816B is arranged, and light-emitting diode chip for backlight unit 810A includes the first luminescence unit 832A and the second luminescence unit 832B, and this first
Luminescence unit 832A and the second luminescence unit 832B are electrically connected the first transistor 816A and transistor seconds 816B, and first
Luminescence unit 832A and the second luminescence unit 832B are all electrically connected to row common electrode 854.
Additionally, in the embodiment shown in Fig. 8 A, although light-emitting diode chip for backlight unit 810A parts cover viewing area 102, but
Light-emitting diode chip for backlight unit 810A is completely covered transistor 816A, 816B corresponding to which.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 8 A, the transistor of the transistor of the present invention can also have which
Its configuration mode, as shown in the embodiment of Fig. 8 B- Fig. 8 C.The scope of the present invention is not limited with the embodiment shown in Fig. 8 A.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 8 A- Fig. 8 C, the light-emitting diode chip for backlight unit of the present invention also may be used
There is other configurations mode, as shown in the embodiment of Fig. 8 D.The scope of the present invention with the embodiment shown in Fig. 6 A- Fig. 8 C is not
Limit.
Embodiment shown in Fig. 8 D is light-emitting diode chip for backlight unit 810B portions with the difference of the embodiment of earlier figures 8A- Fig. 8 C
Divide and cover viewing area 102, light-emitting diode chip for backlight unit 810B also partly covers transistor 816A, the 816B corresponding to which.In more detail
For, connection electrode 826A, 826B of light-emitting diode chip for backlight unit 810B covering transistor 816A, 816B.But do not have at other
In the embodiment of connection electrode 826A, 826B, the drain electrode of light-emitting diode chip for backlight unit 810B covering transistor 816A, 816B.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 8 A- Fig. 8 D, the light-emitting diode chip for backlight unit of the present invention also may be used
There is other configurations mode, as shown in the embodiment of Fig. 9 A- Fig. 9 D.The scope of the present invention is not with the enforcement shown in Fig. 8 A- Fig. 8 D
Example is limited.
Fig. 9 A are the local top views of display device 900A of the embodiment of the present invention.As shown in Figure 9 A, display device 900A
Multiple transistors include the first transistor 916A, transistor seconds 916B, third transistor 916C and the 4th transistor 916D.
Additionally, display device 900A includes two gate lines 946A, 946B and two data line 948A, 948B, and by
This two gate lines 946A, 946B and two data line 948A, 948B control the first transistor 916A, transistor seconds
916B, third transistor 916C and the 4th transistor 916D.
Additionally, display device 900A includes row common electrode 954, this row common electrode 954 has the of opposition side each other
Side S3 and the second side S4.The first transistor 916A and transistor seconds 916B is located at the first side S3 of row common electrode 954, the
Three transistor 916C and the 4th transistor 916D are located at the second side S4 of row common electrode 954.
Light-emitting diode chip for backlight unit 910A correspondence the first transistor 916A, transistor seconds 916B, third transistor 916C and
4th transistor 916D arrange, and light-emitting diode chip for backlight unit 910A include the first luminescence unit 932A, the second luminescence unit 932B,
3rd luminescence unit 932C and the 4th luminescence unit 932D, be electrically connected the first transistor 916A, transistor seconds 916B,
Three transistor 916C and the 4th transistor 916D.This first luminescence unit 932A, the second luminescence unit 932B, the 3rd luminescence unit
932C and the 4th luminescence unit 932D are all electrically connected to row common electrode 954.
Additionally, in the embodiment shown in Fig. 9 A, although light-emitting diode chip for backlight unit 910A parts cover viewing area 102, but
Light-emitting diode chip for backlight unit 910A is completely covered transistor 916A, 916B, 916C, 916D corresponding to which.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 9 A, the transistor of the transistor of the present invention can also have which
Its configuration mode, as shown in the embodiment of Fig. 9 B- Fig. 9 C.The scope of the present invention is not limited with the embodiment shown in Fig. 9 A.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 9 A- Fig. 9 C, the light-emitting diode chip for backlight unit of the present invention also may be used
There is other configurations mode, as shown in the embodiment of Fig. 9 D.The scope of the present invention with the embodiment shown in Fig. 9 A- Fig. 9 C is not
Limit.
Embodiment shown in Fig. 9 D is light-emitting diode chip for backlight unit 910B portions with the difference of the embodiment of earlier figures 9A- Fig. 9 C
Point cover viewing area 102, light-emitting diode chip for backlight unit 910B also partly cover transistor 916A corresponding to which, 916B, 916C,
916D.Particularly, the connection electrode of light-emitting diode chip for backlight unit 910B covering transistors 916A, 916B, 916C, 916D
926A、926B、926C、926D.But in other do not have the embodiment of connection electrode 926A, 926B, 926C, 926D, luminous two
The drain electrode of pole pipe chip 910B covering transistor 916A, 916B, 916C, 916D.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 9 A- Fig. 9 D, the light-emitting diode chip for backlight unit of the present invention also may be used
There is other configurations mode, as shown in the embodiment of Figure 10 A- Figure 10 D.The scope of the present invention is not with the reality shown in Fig. 9 A- Fig. 9 D
Apply example to be limited.
Figure 10 A are the local top views of display device 1000A of the embodiment of the present invention.As shown in Figure 10 A, display device
Multiple transistors of 1000A include that the first transistor 1016A, transistor seconds 1016B, third transistor 1016C and the 4th are brilliant
Body pipe 1016D.
Additionally, display device 1000A includes two gate lines 1046A, 1046B and two data line 1048A, 1048B,
And thus two gate lines 1046A, 1046B and two data line 1048A, 1048B control the first transistor 1016A, second
Transistor 1016B, third transistor 1016C and the 4th transistor 1016D.
Additionally, display device 1000A includes row common electrode 1050 and row common electrode 1054, this journey common electrode 1050
The first side S5 with opposition side each other and the second side S6, this row common electrode 1054 have each other the 3rd side S7 of opposition side and
4th side S8, and intersect with row common electrode 1050, if row common electrode 1054 can with 1054 equal potentials of row common electrode
It is electrically connected to each other, without electrical connection if with different current potential.The first transistor 1016A and transistor seconds 1016B is located at row
First side S5 of common electrode 1050, third transistor 1016C and the 4th transistor 1016D are located at the of row common electrode 1050
Two side S6.Additionally, the first transistor 716A and third transistor 716C are located at the 3rd side S7 of row common electrode 1054, second is brilliant
Body pipe 716B and the 4th transistor 716D is located at the 4th side S8 of row common electrode 1054.
Light-emitting diode chip for backlight unit 1010A correspondence the first transistor 1016A, transistor seconds 1016B, third transistor
1016C and the 4th transistor 1016D are arranged, and light-emitting diode chip for backlight unit 1010A include the first luminescence unit 1032A, second
Light unit 1032B, the 3rd luminescence unit 1032C and the 4th luminescence unit 1032D, be electrically connected the first transistor 1016A,
Two-transistor 1016B, third transistor 1016C and the 4th transistor 1016D.This first luminescence unit 1032A, the second luminous list
First 1032B, the 3rd luminescence unit 1032C and the 4th luminescence unit 1032D are all electrically connected to row common electrode 1050 and row are common
Electrode 1054.
The electric fields uniform degree in device can be increased simultaneously using row common electrode 1050 and row common electrode 1054, therefore can be carried
Rise display quality.
Additionally, in the embodiment shown in Figure 10 A, although light-emitting diode chip for backlight unit 1010A parts cover viewing area 102,
But light-emitting diode chip for backlight unit 1010A is completely covered transistor 1016A, 1016B, 1016C, 1016D corresponding to which.
It should be noted that in addition to the embodiment shown in above-mentioned Figure 10 A, the transistor of the transistor of the present invention can also have which
Its configuration mode, as shown in the embodiment of Figure 10 B- Figure 10 C.The scope of the present invention is not limited with the embodiment shown in Figure 10 A.
It should be noted that in addition to the embodiment shown in above-mentioned Figure 10 A- Figure 10 C, the light-emitting diode chip for backlight unit of the present invention
There can be other configurations mode, as shown in the embodiment of Figure 10 D.The scope of the present invention is not with the enforcement shown in Figure 10 A- Figure 10 C
Example is limited.
Embodiment shown in Figure 10 D is light-emitting diode chip for backlight unit with the difference of the embodiment of earlier figures 10A- Figure 10 C
1010B parts cover viewing area, light-emitting diode chip for backlight unit 1010B also partly cover transistor 1016A corresponding to which, 1016B,
1016C、1016D.For more detailed, light-emitting diode chip for backlight unit 1010B covering transistor 1016A, 1016B, 1016C, 1016D
Connection electrode 1026A, 1026B, 1026C, 1026D.But there is no connection electrode 1026A, 1026B, 1026C, 1026D at other
Embodiment in, the drain electrode of light-emitting diode chip for backlight unit 1010B covering transistor 1016A, 1016B, 1016C, 1016D.
It should be noted that in addition to the embodiment shown in above-mentioned Fig. 6 A- Figure 10 D, gate line and the data wire of the present invention
There can be other configurations mode, as shown in the embodiment of Figure 11 A- Figure 11 E.The scope of the present invention is not with shown in Fig. 6 A- Figure 10 D
Embodiment is limited.
Figure 11 A are the local top views of display device 1100A of the embodiment of the present invention.As shown in Figure 11 A, display device
Multiple transistors of 1100A include that the first transistor 1116A, transistor seconds 1116B, third transistor 1116C and the 4th are brilliant
Body pipe 1116D.
This display device 1100A includes a gate line 1146 and four data line 1148A, 1148B, 1148C, 1148D,
And thus one article of gate line 1146 and four data line 1148A, 1148B, 1148C, 1148D control the first transistor 1116A, the
Two-transistor 1116B, third transistor 1116C and the 4th transistor 1116D.
Four transistors are controlled with a gate line 1146 and four data line 1148A, 1148B, 1148C, 1148D, can
Increase the scan frequency of device, or increase sweep time each time, and can thus lift display quality.
It should be noted that in addition to the embodiment shown in above-mentioned Figure 11 A, the transistor of the transistor of the present invention can also have which
Its configuration mode, as shown in the embodiment of Figure 11 B- Figure 11 D.The scope of the present invention is not limited with the embodiment shown in Figure 11 A.
It should be noted that in addition to the embodiment shown in above-mentioned Figure 11 A- Figure 11 D, the light-emitting diode chip for backlight unit of the present invention
There can be other configurations mode, as shown in the embodiment of Figure 11 E.The scope of the present invention is not with the enforcement shown in Figure 11 A- Figure 11 D
Example is limited.
Embodiment shown in Figure 11 E is light-emitting diode chip for backlight unit with the difference of the embodiment of earlier figures 11A- Figure 11 D
1110B parts cover viewing area 102, light-emitting diode chip for backlight unit 1110B also partly cover transistor 1116A corresponding to which,
1116B、1116C、1116D.For more detailed, the connection of light-emitting diode chip for backlight unit 1110B covering transistor 1116B, 1116C
Electrode 1126B, 1126C.But in other embodiments for not having connection electrode 1126B, 1126C, light-emitting diode chip for backlight unit 1110B
The drain electrode of covering transistor 1116B, 1116C.
Figure 12 A are the side views of the light-emitting diode chip for backlight unit 1210 and substrate SB of another embodiment of the present invention.Figure 12 B are these
The lower view of light-emitting diode chip for backlight unit 1210.As shown in Figure 12 A- Figure 12 B, according to some embodiments of the invention, set on substrate SB
There is a light-emitting diode chip for backlight unit 1210.In some embodiments of the invention, substrate SB can be a transistor base.
Light-emitting diode chip for backlight unit 1210 includes three luminescence units 1232A, 1232B and 1232C, this luminescence unit 1232A,
1232B and 1232C are alternatively referred to as luminous zone.In this embodiment, luminescence unit 1232A, 1232B and 1232C is located at same
In light-emitting diode chip for backlight unit 1210.Also it is sayed, this luminescence unit 1232A, 1232B and 1232C are respectively same light-emitting diodes
The different piece of die 1210.
In some embodiments of the invention, luminescence unit 1232A, 1232B of this light-emitting diode chip for backlight unit 1210 and
1232C can be obtained by same chip, and this light-emitting diode chip for backlight unit 1210 is by luminescence unit 1232A, 1232B and 1232C mono-
Body shapes (formed in one piece).
In some embodiments of the invention, luminescence unit 1232A sends blue light, and luminescence unit 1232B sends green glow, sends out
Light unit 1232C sends ruddiness.And light-emitting diode chip for backlight unit 1210 can by control this luminescence unit 1232A, 1232B and
1232C and send the light of white light or other any colors.
In the present invention, the color that luminescence unit can send is not restricted to red green blue tricolor, other in theory or
The color that actually can be produced by electroluminescent cell all may be used.
With continued reference to shown in Figure 12 A- Figure 12 B, some embodiments of the invention, light-emitting diode chip for backlight unit 1210 are sent out
Light unit includes upper surface 1232S1 and lower surface 1232S2, and this light-emitting diode chip for backlight unit 1210 is may include located at luminescence unit
Lower surface 1232S2 multiple electrodes.Specifically, light-emitting diode chip for backlight unit 1210 is included under luminescence unit 1232A
The electrode 12A1 and electrode 12A2 of surface 1232S2, this electrode 12A1 and electrode 12A2 are electrically connected to luminescence unit 1232A.This electricity
Pole 12A1 and electrode 12A2 can be respectively P-type electrode and N-type electrode, and luminescence unit 1232A can pass through this electrode 12A1 and electricity
Pole 12A2 is bonded to substrate SB, and is electrically connected to substrate SB.
Additionally, light-emitting diode chip for backlight unit 1210 also includes the electrode of the lower surface 1232S2 located at luminescence unit 1232B
12B1 and electrode 12B2, this electrode 12B1 and electrode 12B2 are electrically connected to luminescence unit 1232B.This electrode 12B1 and electrode 12B2
P-type electrode and N-type electrode can be respectively, and luminescence unit 1232B can be bonded to substrate by this electrode 12B1 and electrode 12B2
SB, and it is electrically connected to substrate SB.
Additionally, light-emitting diode chip for backlight unit 1210 also includes the electrode of the lower surface 1232S2 located at luminescence unit 1232C
12C1 and electrode 12C2, this electrode 12C1 and electrode 12C2 are electrically connected to luminescence unit 1232C.This electrode 12C1 and electrode 12C2
P-type electrode and N-type electrode can be respectively, and luminescence unit 1232C can be bonded to substrate by this electrode 12C1 and electrode 12C2
SB, and it is electrically connected to substrate SB.
With continued reference to shown in Figure 12 A, some embodiments of the invention, electrode 12A1, electrode 12A2, electrode 12B1,
Electrode 12B2, electrode 12C1 and electrode 12C2 are all located at the lower surface 1232S2 of the luminescence unit of light-emitting diode chip for backlight unit 1210
On.In other words, electrode 12A1, electrode 12A2, electrode 12B1, electrode 12B2, electrode 12C1 and electrode 12C2 are all located at luminous two
On the same side of pole pipe chip 1210, and this light-emitting diode chip for backlight unit 1210 is bonded to by way of upside-down mounting (flip chip)
On substrate SB.
In embodiments of the present invention, as light-emitting diode chip for backlight unit includes multiple luminescence units simultaneously, and individually can send
The light of white light or other any colors, therefore fill compared to the display using the light-emitting diode chip for backlight unit for being only capable of sending single kind of color
Put, the embodiment of the present invention can reduce the quantity of the light-emitting diode chip for backlight unit used in display device.Therefore making work can be reduced
Light-emitting diode chip for backlight unit is bonded in skill the number of times of transistor base, thus can reduce manufacture craft time and manufacture craft into
This, and lift yield.
Further, since only need using a light-emitting diode chip for backlight unit to express the color of a pixel, and non-usage three
Light-emitting diode chip for backlight unit is expressing the color of a pixel, therefore the embodiment of the present invention can improve resolution ratio.Furthermore, due to being not required to make
With material for transformation of wave length with the color of the sent light of conversion light emitting diode chip, therefore the embodiment of the present invention can reduce device
Thickness.
Figure 13 A are the side views of the light-emitting diode chip for backlight unit 1310 and substrate SB of another embodiment of the present invention.Figure 13 B are these
The lower view of light-emitting diode chip for backlight unit 1310.Embodiment shown in Figure 13 A- Figure 13 B and the embodiment of earlier figures 12A- Figure 12 B
Difference is that luminescence unit 1332A, 1332B and 1332C are electrically connected to community electrode 13E.Specifically, luminescence unit
1332A is electrically connected to electrode 13A1 and common electrode 13E, and luminescence unit 1332B is electrically connected to electrode 13B1 and common electrode
13E, and luminescence unit 1332C is electrically connected to electrode 13C1 and common electrode 13E.
Figure 14 A are the side views of the light-emitting diode chip for backlight unit 1410 and substrate SB of another embodiment of the present invention.Figure 14 B are these
The lower view of light-emitting diode chip for backlight unit 1410.Embodiment shown in Figure 14 A- Figure 14 B and the embodiment of earlier figures 12A- Figure 12 B
Difference is that light-emitting diode chip for backlight unit 1410 includes four luminescence units 1432A, 1432B, 1432C and 1432D.
In some embodiments of the invention, luminescence unit 1432A sends blue light, and luminescence unit 1432B sends green glow, sends out
Light unit 1432C sends ruddiness, and luminescence unit 1432D sends gold-tinted.And light-emitting diode chip for backlight unit 1410 can be extra by this
Luminescence unit 1432D is increasing its luminosity.
With continued reference to shown in Figure 14 A- Figure 14 B, some embodiments of the invention, light-emitting diode chip for backlight unit 1410 can be wrapped
Include the multiple electrodes of the lower surface 1432S2 located at luminescence unit.Specifically, light-emitting diode chip for backlight unit 1410 includes being located at and sends out
The electrode 14A1 and electrode 14A2 of the lower surface 1432S2 of light unit 1432A, this electrode 14A1 and electrode 14A2 are electrically connected to and send out
Light unit 1432A.This electrode 14A1 and electrode 14A2 can be respectively P-type electrode and N-type electrode, and luminescence unit 1432A can lead to
Cross this electrode 14A1 and electrode 14A2 and be bonded to substrate SB, and be electrically connected to substrate SB.
Additionally, light-emitting diode chip for backlight unit 1410 also includes the electrode of the lower surface 1432S2 located at luminescence unit 1432B
14B1 and electrode 14B2, this electrode 14B1 and electrode 14B2 are electrically connected to luminescence unit 1432B.This electrode 14B1 and electrode 14B2
P-type electrode and N-type electrode can be respectively, and luminescence unit 1432B can be bonded to substrate by this electrode 14B1 and electrode 14B2
SB, and it is electrically connected to substrate SB.
Additionally, light-emitting diode chip for backlight unit 1410 also includes the electrode of the lower surface 1432S2 located at luminescence unit 1432C
14C1 and electrode 14C2, this electrode 14C1 and electrode 14C2 are electrically connected to luminescence unit 1432C.This electrode 14C1 and electrode 14C2
P-type electrode and N-type electrode can be respectively, and luminescence unit 1432C can be bonded to substrate by this electrode 14C1 and electrode 14C2
SB, and it is electrically connected to substrate SB.
Additionally, light-emitting diode chip for backlight unit 1410 also includes the electrode of the lower surface 1432S2 located at luminescence unit 1432D
14D1 and electrode 14D2, this electrode 14D1 and electrode 14D2 are electrically connected to luminescence unit 1432D.This electrode 14D1 and electrode 14D2
P-type electrode and N-type electrode can be respectively, and luminescence unit 1432D can be bonded to substrate by this electrode 14D1 and electrode 14D2
SB, and it is electrically connected to substrate SB.
Figure 15 A are the side views of the light-emitting diode chip for backlight unit 1510 and substrate SB of another embodiment of the present invention.Figure 15 B are these
The lower view of light-emitting diode chip for backlight unit 1510.Embodiment shown in Figure 15 A- Figure 15 B and the embodiment of earlier figures 12A- Figure 12 B
Difference is that luminescence unit 1532A, 1532B, 1532C and 1532D are electrically connected to community electrode 15E.Specifically, light single
First 1532A is electrically connected to electrode 15A1 and common electrode 15E, and luminescence unit 1532B is electrically connected to electrode 15B1 and common electrode
15E, luminescence unit 1532C are electrically connected to electrode 15C1 and common electrode 15E, and luminescence unit 1532D is electrically connected to electrode
15D1 and common electrode 15E.
Figure 16 A are the side views of the light-emitting diode chip for backlight unit 1610 and substrate SB of another embodiment of the present invention.Figure 16 B are these
The lower view of light-emitting diode chip for backlight unit 1610.Embodiment shown in 16A-16B figures and the embodiment of earlier figures 12A- Figure 12 B
Difference is that light-emitting diode chip for backlight unit 1610 includes two luminescence units 1632A and 1632B.Luminescence unit 1632A and 1632B are electric
It is connected to community electrode 16E.Specifically, luminescence unit 1632A is electrically connected to electrode 16A1 and common electrode 16E, lights
Unit 1632B is electrically connected to electrode 16B1 and common electrode 16E.
Additionally, luminescence unit 1632A sends blue light, luminescence unit 1632B sends gold-tinted.Light-emitting diode chip for backlight unit 1610 can
The light of white light or other any colors is sent by controlling this luminescence unit 1632A and 1632B.
Figure 17 A are the side views of the light-emitting diode chip for backlight unit 1710 and substrate SB of another embodiment of the present invention.Figure 17 B are these
The lower view of light-emitting diode chip for backlight unit 1710.Embodiment shown in Figure 17 A- Figure 17 B and the embodiment of earlier figures 12A- Figure 12 B
Difference is that display device also includes a wavelength conversion material layer 1738 (or claiming photoluminescent layers 1738), is arranged at light-emitting diodes
On the upper surface 1732S1 of die 1710.
In some embodiments of the invention, luminescence unit 1732A, 1732B and 1732C can send blue light, and this wavelength
This blue light can be converted to white light by transition material layer 1738.
Additionally, luminescence unit 1732A is electrically connected to electrode 17A1 and common electrode 17E, luminescence unit 1732B is electrically connected to
Electrode 17B1 and common electrode 17E, luminescence unit 1732C are electrically connected to electrode 17C1 and common electrode 17E.
Figure 18 A are the side views of the light-emitting diode chip for backlight unit 1810 and substrate SB of another embodiment of the present invention.Figure 18 B are these
The lower view of light-emitting diode chip for backlight unit 1810.Embodiment shown in Figure 18 A- Figure 18 B and the embodiment of earlier figures 17A- Figure 17 B
Difference is to be not provided with wavelength conversion material layer on the luminescence unit 1832A of light-emitting diode chip for backlight unit 1810, and luminescence unit
1832B is provided with wavelength conversion material layer 1838B, and luminescence unit 1832C is provided with wavelength conversion material layer 1838C.
In some embodiments of the invention, luminescence unit 1832A, 1832B and 1832C can send blue light, and this wavelength
The blue light that luminescence unit 1832B sends can be converted to green glow by transition material layer 1838B, and wavelength conversion material layer 1838C can be by
The blue light that luminescence unit 1832C sends is converted to ruddiness.The blue light that this ruddiness, green glow and luminescence unit 1832A send can mix
For white light or the light of other any colors.
Additionally, luminescence unit 1832A is electrically connected to electrode 18A1 and common electrode 18E, luminescence unit 1832B is electrically connected to
Electrode 18B1 and common electrode 18E, luminescence unit 1832C are electrically connected to electrode 18C1 and common electrode 18E.
Figure 19 A are the side views of the light-emitting diode chip for backlight unit 1910 and substrate SB of another embodiment of the present invention.Figure 19 B are these
The lower view of light-emitting diode chip for backlight unit 1910.Embodiment shown in Figure 19 A- Figure 19 B and the embodiment of earlier figures 12A- Figure 12 B
Difference is the lower surface 1932S2 and upper surface 1932S1 that electrode 19A1 and electrode 19A2 is respectively arranged on luminescence unit 1932A.
Electrode 19B1 and electrode 19B2 are respectively arranged on the lower surface 1932S2 and upper surface 1932S1 of luminescence unit 1932B.Electrode 19C1
And electrode 19C2 is respectively arranged on the lower surface 1932S2 and upper surface 1932S1 of luminescence unit 1932C.
Figure 20 A are the side views of the light-emitting diode chip for backlight unit 2010 and substrate SB of another embodiment of the present invention.Figure 20 B are these
The lower view of light-emitting diode chip for backlight unit 2010.Embodiment shown in Figure 20 A- Figure 20 B and the embodiment of earlier figures 13A- Figure 13 B
Difference is common electrode 20E located at the upper surface of luminescence unit 2032A, luminescence unit 2032B and luminescence unit 2032C
On 2032S1, and electrode 20A1, electrode 20B1 and electrode 20C1 are respectively arranged on luminescence unit 2032A, luminescence unit 2032B and send out
On the lower surface 2032S2 of light unit 2032C.
Figure 21 A are the side views of the light-emitting diode chip for backlight unit 2110 and substrate SB of another embodiment of the present invention.Figure 21 B are these
The lower view of light-emitting diode chip for backlight unit 2110.Embodiment shown in Figure 21 A- Figure 21 B and the embodiment of earlier figures 16A- Figure 16 B
Difference is that common electrode 21E is located on the upper surface 2132S1 of luminescence unit 2132A and luminescence unit 2132B, and electrode
21A1 and electrode 21B1 are respectively arranged on the lower surface 2132S2 of luminescence unit 2132A and luminescence unit 2132B.
Figure 22 is the side view of the light-emitting diode chip for backlight unit 2210 of another embodiment of the present invention.Embodiment shown in Figure 22 with
The difference of the embodiment of earlier figures 15A- Figure 15 B be common electrode 22E located at luminescence unit 2232A, luminescence unit 2232B,
On luminescence unit 2232C, the upper surface 2232S1 of luminescence unit 2232D, and electrode 22A1, electrode 22B1, electrode 22C1 and electricity
Pole 22D1 is respectively arranged on luminescence unit 2232A, luminescence unit 2232B, luminescence unit 2232C, the lower surface of luminescence unit 2232D
On 2232S2.
Figure 23 is the side view of the light-emitting diode chip for backlight unit 2310 of another embodiment of the present invention.Embodiment shown in Figure 23 with
The difference of the embodiment of earlier figures 15A- Figure 15 B is that electrode 23A2, electrode 23B2, electrode 23C2 and electrode 23D2 are respectively arranged on
On luminescence unit 2332A, luminescence unit 2332B, luminescence unit 2332C, the upper surface 2332S1 of luminescence unit 2332D, and it is electric
Pole 23A1, electrode 23B1, electrode 23C1 and electrode 23D1 are respectively arranged on luminescence unit 2332A, luminescence unit 2332B, luminous list
On first 2332C, the lower surface 2332S2 of luminescence unit 2332D.
Figure 24 A are the top views of the light-emitting diode chip for backlight unit 2410A of another embodiment of the present invention.As shown in fig. 24 a, according to
Some embodiments of the invention, light-emitting diode chip for backlight unit 2410A is rectangle, and each luminescence unit 2432A, luminescence unit
On the whole 2432B and luminescence unit 2432C are square.
Figure 24 B are the top views of the light-emitting diode chip for backlight unit 2410B of another embodiment of the present invention.As shown in fig. 24b, according to
Some embodiments of the invention, light-emitting diode chip for backlight unit 2410B is rectangle, and each luminescence unit 2432A, luminescence unit
On the whole 2432B and luminescence unit 2432C are also rectangle.
Figure 24 C are the top views of the light-emitting diode chip for backlight unit 2410C of another embodiment of the present invention.As shown in Figure 24 C, according to
Some embodiments of the invention, light-emitting diode chip for backlight unit 2410C are triangle, and light-emitting diode chip for backlight unit 2410C includes that three are sent out
Light unit, respectively luminescence unit 2432A, luminescence unit 2432B and luminescence unit 2432C.
Figure 24 D are the top views of the light-emitting diode chip for backlight unit 2410D of another embodiment of the present invention.As shown in Figure 24 D, according to
Some embodiments of the invention, light-emitting diode chip for backlight unit 2410D are triangle, and light-emitting diode chip for backlight unit 2410D includes that two are sent out
Light unit, respectively luminescence unit 2432A and luminescence unit 2432B.
Figure 25 A are the top views of the light-emitting diode chip for backlight unit 2510A of another embodiment of the present invention.As shown in fig. 25 a, according to
Some embodiments of the invention, light-emitting diode chip for backlight unit 2510A are circle, and light-emitting diode chip for backlight unit 2510A includes that two light
Unit, respectively luminescence unit 2532A and luminescence unit 2532B.
Figure 25 B are the top views of the light-emitting diode chip for backlight unit 2510B of another embodiment of the present invention.As shown in Figure 25 B, according to
Some embodiments of the invention, light-emitting diode chip for backlight unit 2510B are circle, and light-emitting diode chip for backlight unit 2510B includes that three light
Unit, respectively luminescence unit 2532A, luminescence unit 2532B and luminescence unit 2532C.
The display device of the present invention is not limited in the state illustrated in Figure 1A-Figure 25 B.The present invention can only include figure
Any one or more features of any one or more embodiments of 1A- Figure 25 B.In other words, and not all diagram feature must
It is implemented in the display device of the present invention simultaneously.
In embodiments of the present invention, common electrode preferably includes being total to for row common electrode, row common electrode or whole face property
Same electrode, but be not limited thereto.
In embodiments of the present invention, luminescence unit preferably includes p type semiconductor layer, n type semiconductor layer and is connected to
The first electrode of p type semiconductor layer and the second electrode for being connected to n type semiconductor layer, but be not limited thereto.
In embodiments of the present invention, a light-emitting diode chip for backlight unit includes multiple luminescence units, preferably refers to one luminous two
Pole pipe chip is formed by combined by multigroup p type semiconductor layer independent of each other, n type semiconductor layer, first electrode, second electrode
Flat light emission, but be not limited thereto.
In sum, the embodiment of the present invention makes light-emitting diode chip for backlight unit at least two crystal of correspondence in display device
Pipe is arranged, to reduce the quantity of the light-emitting diode chip for backlight unit used in display device.Therefore will send out during manufacture craft can be reduced
Luminous diode chip is bonded to the number of times of array base palte, therefore can reduce manufacture craft time and manufacture craft cost, and is lifted good
Rate.Some embodiments of the invention will send the light-emitting diode chip for backlight unit of different colours (such as red, blue, green) and be located at array
On substrate.However, due to the variation in production process, even having still suffered from frequency between the light-emitting diode chip for backlight unit of same color
The difference of spectrum.And before light-emitting diode chip for backlight unit is engaged in array base palte, need to select to have and suitably send out spectral luminous two
Pole pipe chip, and the light-emitting diode chip for backlight unit of different colours when engaging, need to be engaged respectively, therefore cause the production time to increase.Therefore,
Light-emitting diode chip for backlight unit of some embodiments of the invention by using solid color, and coordinate chromatic filter layer and/or photic
Photosphere, to reach true color and the production time can be greatly reduced.
Although disclosed above embodiments of the invention and its advantage, it will be appreciated that any art
Middle skilled person, without departing from the spirit and scope of the present invention, can change, substitute and retouching.Additionally, the present invention
Protection domain be not necessarily limited by the manufacture craft in specification in the specific embodiment, machine, manufacture, material composition, device,
Method and step, in any art, skilled person can understand existing or following institute from disclosure of the present invention
Manufacture craft, machine, manufacture, material composition, device, method and the step for developing, as long as can be in embodiment described herein
It is middle implement more or less the same function or obtain more or less the same result all can be used according to the invention.Therefore, protection scope of the present invention
Including above-mentioned manufacture craft, machine, manufacture, material composition, device, method and step.In addition, each claim is constituted individually
Embodiment, and protection scope of the present invention also includes the combination of each claim and embodiment.
Claims (20)
1. a kind of display device, including：
First substrate；
The first transistor and transistor seconds, are arranged on the first substrate；
Common electrode, is arranged on the first substrate；And
Light-emitting diode chip for backlight unit, to should the first transistor and the transistor seconds be arranged on the first substrate, this luminous two
Pole pipe chip includes the first luminescence unit and the second luminescence unit；
Wherein, first luminescence unit is respectively electrically connected to the first transistor and the common electrode, and second luminescence unit
It is respectively electrically connected to the transistor seconds and the common electrode.
2. display device as claimed in claim 1, wherein light-emitting diode chip for backlight unit 2N transistor of correspondence be arranged at this
On one substrate, wherein N is more than 1 positive integer.
3. display device as claimed in claim 1, also comprising the third transistor being arranged on the first substrate, and this is luminous
Diode chip for backlight unit also to should third transistor be arranged on the first substrate, the light-emitting diode chip for backlight unit is luminous single comprising the 3rd
Unit, wherein, the 3rd luminescence unit is respectively electrically connected to the third transistor and the common electrode.
4. display device as claimed in claim 3, wherein light-emitting diode chip for backlight unit 3N transistor of correspondence be arranged at this
On one substrate, wherein N is more than 1 positive integer.
5. display device as claimed in claim 1, also includes：
Fluorescence coating, is arranged at the exiting surface of the light-emitting diode chip for backlight unit.
6. display device as claimed in claim 5, also includes：
Second substrate, is arranged relative to the first substrate；And
Chromatic filter layer, is arranged between the first substrate and the second substrate, wherein, and it is color that the chromatic filter layer includes first
Color filter unit and the second colored light-filtering units, wherein, first colored light-filtering units go out light positioned at first luminescence unit
On path, second colored light-filtering units go out on light path positioned at second luminescence unit.
7. display device as claimed in claim 1, also includes：
Second substrate, is arranged relative to the first substrate；And
Quantum dot film, is arranged between the first substrate and the second substrate, wherein, and the quantum dot film includes the first amount
Son point film and the second quantum dot film, wherein, first quantum dot film goes out on light path positioned at first luminescence unit,
Second quantum dot film goes out on light path positioned at second luminescence unit.
8. display device as claimed in claim 1, also includes：
First scan line, is arranged on the first substrate, extends along a first direction；
Second scan line, is arranged on the first substrate, extends along the first direction；And
Data wire, is arranged on the first substrate, extends along a second direction, and the first direction is on the whole perpendicular to the second party
To；
Wherein, the first transistor is electrically connected first scan line and the data wire, and the transistor seconds is electrically connected
Second scan line and the data wire.
9. display device as claimed in claim 1, also includes：
Scan line, is arranged on the first substrate, extends along a first direction；
First data wire, is arranged on the first substrate, extends along a second direction；And
Second data wire, is arranged on the first substrate, extends along the second direction, the first direction on the whole perpendicular to this second
Direction；
Wherein, the first transistor is electrically connected first data wire and the scan line, and the transistor seconds is electrically connected
Second data wire and the scan line.
10. display device as claimed in claim 1, also includes：
Third transistor and the 4th transistor, are arranged on the first substrate；
Wherein, the light-emitting diode chip for backlight unit also to should third transistor and the 4th transistor be arranged on the first substrate,
The light-emitting diode chip for backlight unit is also comprising the 3rd luminescence unit and the 4th luminescence unit, and the common electrode includes interlaced with each other the
Community electrode and the second common electrode；
Wherein, the 3rd luminescence unit is respectively electrically connected to the third transistor and the common electrode, and the 4th luminescence unit
It is respectively electrically connected to the 4th transistor AND gate common electrode.
11. display devices as claimed in claim 1, also include：
Scan line, is arranged on the first substrate；
First data wire, is arranged on the first substrate；
Second data wire, is arranged on the first substrate；
3rd data wire, is arranged on the first substrate；
4th data wire, is arranged on the first substrate；
Third transistor and one the 4th transistor, are arranged on the first substrate；
Wherein, the light-emitting diode chip for backlight unit more to should third transistor and the 4th transistor be arranged on the first substrate,
The light-emitting diode chip for backlight unit also includes one the 3rd luminescence unit and one the 4th luminescence unit, wherein, the 3rd luminescence unit difference
The third transistor and the common electrode is electrically connected to, and the 4th luminescence unit is respectively electrically connected to the 4th transistor AND gate and is somebody's turn to do
Common electrode；
Wherein, the first transistor is electrically connected first data wire and the scan line, and the transistor seconds is electrically connected
Second data wire and the scan line, the third transistor are electrically connected the 3rd data wire and the scan line, and the 4th
Transistor is electrically connected the 4th data wire and the scan line.
12. display devices as claimed in claim 1, wherein, normal direction of the light-emitting diode chip for backlight unit in the first substrate
Upper covering the first transistor and the transistor seconds.
13. display devices as claimed in claim 1, wherein, normal direction of the light-emitting diode chip for backlight unit in the first substrate
Upper part covers the first transistor and the transistor seconds.
14. display devices as claimed in claim 1, also include：
Second substrate, is arranged relative to the first substrate；And
Separation material, is arranged between the first substrate and the second substrate.
15. display devices as claimed in claim 14, wherein, the separation material is located at a non-display area of the display device.
16. display devices as claimed in claim 14, wherein, the separation material is located at a viewing area of the display device.
17. display devices as claimed in claim 1, wherein,
First luminescence unit includes a first electrode for being electrically connected to the first transistor, and one is electrically connected to the common electricity
The second electrode of pole.
18. display devices as claimed in claim 17, wherein, the first transistor be a thin film transistor (TFT), the film crystal
Pipe includes gate electrode, source electrode and drain electrode.
19. display devices as claimed in claim 18, wherein, the thin film transistor (TFT) also includes connection electrode, is electrically connected respectively
Connect the drain electrode and the first electrode.
20. display devices as claimed in claim 1, wherein, first luminescence unit is included respectively with second luminescence unit
Inorganic light-emitting diode.
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| CN201510568431 | 2015-09-09 | ||
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| CN2016100814390 | 2016-02-05 |
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| CN106531759B (en) | 2019-07-09 |
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