CN106531745A - Thin film transistor array substrate and liquid crystal panel - Google Patents
Thin film transistor array substrate and liquid crystal panel Download PDFInfo
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- CN106531745A CN106531745A CN201611049222.8A CN201611049222A CN106531745A CN 106531745 A CN106531745 A CN 106531745A CN 201611049222 A CN201611049222 A CN 201611049222A CN 106531745 A CN106531745 A CN 106531745A
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- 239000010409 thin film Substances 0.000 title claims abstract description 149
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 title claims abstract description 5
- 239000010408 film Substances 0.000 claims description 23
- 238000004891 communication Methods 0.000 claims description 20
- 230000005611 electricity Effects 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
Abstract
The invention provides a thin film transistor array substrate which comprises sets of thin film transistors and a number of RGB pixel units. Each set of thin film transistor comprises three thin film transistors located in first, second and third rows. Three thin film transistors are corresponding to an R subpixel, a G subpixel and a B subpixel in a corresponding RGB pixel unit. The length-width ratio of conductive channels of all thin film transistors in each row is not exactly the same, but is within a preset ratio range, so that the total leakage current of the row is within a preset current range. The leakage current is only related to the width-length ratio of the conductive channel of the thin film transistor. The larger the width-length ratio W/L is, the larger the drain current is. The smaller the width-length ratio is, the smaller the drain current is. According to the invention, burrs in a control signal output by a driving chip are avoided; the display quality of a liquid crystal panel is improved; noise can be avoided; and the power consumption of a display module is reduced. The invention further provides the liquid crystal panel.
Description
Technical field
The present invention relates to a kind of display technology field, more particularly, to a kind of voltage output control circuit and liquid crystal display
Device.
Background technology
With the development that small-medium size electronical display industry is maked rapid progress, people are to small-medium size LCD liquid crystal display screen
The quality requirements such as resolution ratio also more come high.The integrality of the raising of display quality and the transfer rate of display data and signal has
The contact of interwoveness.For current small-medium size LCD display, within the time cycle that grid is opened, open simultaneously respectively
All of multiplexer is opened, to complete the charging of RGB sub-pixels.But while all of multiplexer is opened, can lead
Cause display module moment liquid crystal panel driving chip is formed one it is larger take out loads, so as to the control of driving chip output can be caused
There is burr in signal processed, can not only affect display quality, produces noise, and can increase the power consumption of display module.
The content of the invention
It is an object of the invention to provide a kind of thin-film transistor array base-plate, to improve display quality, it is to avoid generation is made an uproar
Sound, and reduce the power consumption of display module.
Another object of the present invention is to provide a kind of liquid crystal panel.
To achieve these goals, embodiment of the present invention provides following technical scheme：
The present invention provides a kind of thin-film transistor array base-plate, including multigroup thin film transistor (TFT) and multiple rgb pixel units,
One cluster film transistor, one rgb pixel unit of correspondence, each cluster film transistor are included respectively positioned at the first to the third line
Three thin film transistor (TFT)s, it is sub that three thin film transistor (TFT)s correspond to R sub-pixels in corresponding rgb pixel unit, G sub-pixel and B respectively
Pixel, in every a line, the length-width ratio of the conducting channel of all of thin film transistor (TFT) is incomplete same, and in preset ratio scope
It is interior, so that total leakage current of the row is in the range of predetermined current.
Wherein, in the first row thin film transistor (TFT), the length-width ratio of the conducting channel of two neighboring thin film transistor (TFT) is different.
Wherein, the first row thin film transistor (TFT) includes 2N thin film transistor (TFT), and N is natural number, 2N thin film transistor (TFT)
The length-width ratio of conductive communication is identical.
Wherein, the length-width ratio of the conductive communication of 2N-1 thin film transistor (TFT) is identical, and with 2N thin film transistor (TFT)
The length-width ratio of conductive communication is different.
Wherein, in the second row thin film transistor (TFT), the length-width ratio of the conducting channel of two neighboring thin film transistor (TFT) is different.
Wherein, the second row thin film transistor (TFT) includes 2N thin film transistor (TFT), and N is natural number, 2N thin film transistor (TFT)
The length-width ratio of conductive communication is identical.
Wherein, the length-width ratio of the conductive communication of 2N-1 thin film transistor (TFT) is identical.
Wherein, in the third line thin film transistor (TFT), the length-width ratio of the conducting channel of two neighboring thin film transistor (TFT) is different.
Wherein, the third line thin film transistor (TFT) includes 2N thin film transistor (TFT), and N is natural number, 2N thin film transistor (TFT)
The length-width ratio of conductive communication is identical.
Wherein, the length-width ratio of the conductive communication of 2N-1 thin film transistor (TFT) is identical.
The present invention also provides a kind of liquid crystal panel, including above-mentioned thin-film transistor array base-plate, liquid crystal and color membrane substrates.
The embodiment of the present invention has the advantage that or beneficial effect：
The thin-film transistor array base-plate of the present invention, including multigroup thin film transistor (TFT) and multiple rgb pixel units, one group thin
Film transistor one rgb pixel unit of correspondence, each cluster film transistor includes thin positioned at three of the first to the third line respectively
Film transistor, three thin film transistor (TFT)s correspond to R sub-pixels in corresponding rgb pixel unit, G sub-pixel and B sub-pixels respectively, often
In a line, the length-width ratio of the conducting channel of all of thin film transistor (TFT) is incomplete same, and in the range of preset ratio, so that
Total leakage current of the row is obtained in the range of predetermined current.Due to leakage current width length only with the conducting channel of the thin film transistor (TFT)
Than correlation, the more big then drain current of breadth length ratio W/L is bigger, and the more little then drain current of breadth length ratio is less.Therefore, the present embodiment passes through
Change the length-width ratio of the thin film transistor (TFT) of the corresponding line of correspondence R sub-pixels, G sub-pixel and B sub-pixels, the total of the row can be adjusted
Leakage current predetermined current scope (as reducing the size of total leakage current of the row, but also greater than one current threshold),
So on the premise of display effect is not affected driving chip can be made not re-form one and larger to take out load, it is to avoid drive core
There is burr in the control signal of piece output, so as to improve the display quality of liquid crystal panel, it is to avoid noise, and also reduces
The power consumption of display module.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is a kind of circuit diagram of thin-film transistor array base-plate that first aspect of the present invention embodiment is provided.
Fig. 2 is the cross sectional plan view of thin film transistor (TFT) in Fig. 1.
Fig. 3 is the section arrangement top view of thin film transistor (TFT) in Fig. 1.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment a part of embodiment only of the invention, rather than the embodiment of whole.Base
Embodiment in the present invention, it is all that those of ordinary skill in the art are obtained on the premise of creative work is not made
Other embodiments, belong to the scope of protection of the invention.
Additionally, the explanation of following embodiment is with reference to additional diagram, the spy for implementing is may be used to illustrate the present invention
Determine embodiment.The direction term being previously mentioned in the present invention, for example, " on ", D score, "front", "rear", "left", "right", " interior ",
" outward ", " side " etc., is only the direction with reference to annexed drawings, therefore, the direction term for using is to more preferably, more clearly say
It is bright and understand the present invention, rather than indicate or infer the device or element of indication and must have specific orientation, with specific side
Position construction and operation, therefore be not considered as limiting the invention.
In describing the invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Company ", " connection " should be interpreted broadly, for example, it may be being fixedly connected, or detachably connected, or integratedly connect
Connect；Can be mechanically connected；Can be joined directly together, it is also possible to be indirectly connected to by intermediary, can be in two elements
The connection in portion.For the ordinary skill in the art, above-mentioned term tool in the present invention can be understood with concrete condition
Body implication.
Additionally, in describing the invention, unless otherwise stated, " multiple " are meant that two or more.If this
Occur the term of " operation " in specification, which refers not only to independent operation, when clearly distinguishing with other operations, as long as
Can realize that the effect desired by the operation is then also included within this term.In addition, the numerical value model represented with "～" in this specification
Enclose the scope for referring to that the numerical value recorded before and after "～" is included as minimum of a value and maximum.In the accompanying drawings, structure
Similar or identical is indicated by the same numeral.
Fig. 1-Fig. 2 is referred to, first aspect of the present invention embodiment provides a kind of thin-film transistor array base-plate 100.It is described
Thin-film transistor array base-plate 100 includes multigroup thin film transistor (TFT) 10 and multiple rgb pixel units 20, a cluster film transistor 10
One rgb pixel unit 20 of correspondence, each cluster film transistor include three film crystals respectively positioned at the first to the third line
Pipe 11,12 and 13, three thin film transistor (TFT)s 11,12 and 13 correspond to R sub-pixels in corresponding rgb pixel unit, G sub-pixel respectively
And B sub-pixels, in every a line, length-width ratio W/L of the conducting channel of all of thin film transistor (TFT) is incomplete same, and default
In proportion, so that total leakage current of the row is in the range of predetermined current.
It should be noted that all of R sub-pixels of the correspondence of thin film transistor (TFT) 11 of the first row, the thin film transistor (TFT) of the second row
The all of G sub-pixel of 12 correspondences, all of R sub-pixels of the correspondence of thin film transistor (TFT) 13 of the third line.Wherein, the total leakage per a line
Electric current is the leakage current sum of each thin film transistor (TFT) in the row.The leakage current of each thin film transistor (TFT) is Id=0.5*
K*W/L* (Vgs-Vth) ^2 (wherein K, Vth are only related to the material of thin film transistor (TFT) constants) understands, when brilliant to film
Mono- timings of Vgs of body pipe, its drain current Id, breadth length ratio related to breadth length ratio W/L of the conducting channel of the thin film transistor (TFT)
W/L is more big, and then drain current Id is bigger, and more little then drain current Id is less for breadth length ratio W/L.Therefore, the present embodiment is right by changing
The length-width ratio of the thin film transistor (TFT) of the corresponding line of R sub-pixels, G sub-pixel and B sub-pixels is answered, total electric leakage of the row can be adjusted
Stream so may be used predetermined current scope (as reducing the size of total leakage current of the row, but also greater than one current threshold)
Larger load is taken out, to make driving chip not re-form one on the premise of display effect is not affected, it is to avoid driving chip is exported
Control signal there is burr, so as to improve the display quality of liquid crystal panel, it is to avoid noise, and also reduce display mould
The power consumption of group.
Fig. 3 is referred to, in the present embodiment, in the first row thin film transistor (TFT) 11, two neighboring thin film transistor (TFT) 11
Length-width ratio W/L of conducting channel is different.
Specifically, the first row thin film transistor (TFT) 11 includes 2N thin film transistor (TFT), and N is natural number, the 2N film crystal
Length-width ratio W/L of the conductive communication of pipe 11 is identical.
It should be noted that in the thin film transistor (TFT) 11 of the first row, the film on the even number positions such as second, four, six is brilliant
Length-width ratio W/L of the conducting channel of body pipe 11 is identical.
The length-width ratio of the conductive communication of the 2N-1 thin film transistor (TFT) 11 is identical, and leads with the 2N thin film transistor (TFT) 11
The length-width ratio that electricity is linked up is different.
It should be noted that in the thin film transistor (TFT) 11 of the first row, the film in the odd positions such as first and third, five is brilliant
Length-width ratio W/L of the conducting channel of body pipe 11 is identical, and with even number position on thin film transistor (TFT) 11 conducting channel length and width
Than difference.So, in the first row thin film transistor (TFT) 11, the length-width ratio of the conducting channel of thin film transistor (TFT) 11 present it is large and small,
The large and small arrangement situation for being repeated in above-mentioned state, or arrangement situation that is little, large and small, being repeated in greatly above-mentioned state is presented.
In the present embodiment, the length of the conductive communication of the 2N thin film transistor (TFT) 11 is wider than the 2N-1 thin film transistor (TFT) 11
The length-width ratio of conductive communication.
In the present embodiment, the thin film transistor (TFT) 12 of second row also with 11 structure of thin film transistor (TFT) of the first row and be in
Existing arrangement situation is identical.Specially：
In second row thin film transistor (TFT) 12, length-width ratio W/L of the conducting channel of two neighboring thin film transistor (TFT) 12 is not
Together.
Specifically, the second row thin film transistor (TFT) 12 includes 2N thin film transistor (TFT), and N is natural number, the 2N film crystal
Length-width ratio W/L of the conductive communication of pipe 12 is identical.
It should be noted that in the thin film transistor (TFT) 12 of the second row, the film on the even number positions such as second, four, six is brilliant
Length-width ratio W/L of the conducting channel of body pipe 12 is identical.
The length-width ratio of the conductive communication of the 2N-1 thin film transistor (TFT) 12 is identical, and leads with the 2N thin film transistor (TFT) 12
The length-width ratio that electricity is linked up is different.
It should be noted that in the thin film transistor (TFT) 12 of the second row, the film in the odd positions such as first and third, five is brilliant
Length-width ratio W/L of the conducting channel of body pipe 12 is identical, and with even number position on thin film transistor (TFT) 12 conducting channel length and width
Than difference.So, in the second row thin film transistor (TFT) 12, the length-width ratio of the conducting channel of thin film transistor (TFT) 12 present it is large and small,
The large and small arrangement situation for being repeated in above-mentioned state, or arrangement situation that is little, large and small, being repeated in greatly above-mentioned state is presented.
In the present embodiment, the structure and arrangement mode of the third line thin film transistor (TFT) 13 and described first and second row
Thin film transistor (TFT) 11 and 12 it is identical.Specially：
In the third line thin film transistor (TFT) 13, the length-width ratio of the conducting channel of two neighboring thin film transistor (TFT) 13 is different.
It should be noted that in the thin film transistor (TFT) 13 of the third line, the film on the even number positions such as second, four, six is brilliant
Length-width ratio W/L of the conducting channel of body pipe 13 is identical.
The length-width ratio of the conductive communication of the 2N-1 thin film transistor (TFT) 13 is identical, and leads with the 2N thin film transistor (TFT) 13
The length-width ratio that electricity is linked up is different.
It should be noted that in the thin film transistor (TFT) 13 of the third line, the film in the odd positions such as first and third, five is brilliant
Length-width ratio W/L of the conducting channel of body pipe 13 is identical, and with even number position on thin film transistor (TFT) 13 conducting channel length and width
Than difference.So, in the second row thin film transistor (TFT) 13, the length-width ratio of the conducting channel of thin film transistor (TFT) 13 present it is large and small,
The large and small arrangement situation for being repeated in above-mentioned state, or arrangement situation that is little, large and small, being repeated in greatly above-mentioned state is presented.
In other embodiments, as the thin film transistor (TFT) of every a line is all separate, described the first to the third line
Thin film transistor (TFT) 11-13 can be with different in structure and arrangement mode.As long as meeting, all of thin film transistor (TFT) in every a line
Length-width ratio W/L of conducting channel is incomplete same, and in the range of preset ratio, so that total leakage current of the row is pre-
If in current range.
Second aspect of the present invention embodiment provides a kind of liquid crystal panel 400.The liquid crystal panel 400 includes thin film transistor (TFT)
Array base palte, liquid crystal 410 and color membrane substrates 420.Wherein, the thin-film transistor array base-plate is above-mentioned first scheme embodiment
The thin-film transistor array base-plate 100 of middle offer.As thin-film transistor array base-plate 100 has been carried out in first scheme in detail
Carefully describe, therefore will not be described here.
In the present embodiment, the liquid crystal panel 400 includes the thin-film transistor array base-plate 100.The film is brilliant
Body pipe array base palte 100 includes multigroup thin film transistor (TFT) 10 and multiple rgb pixel units 20, the correspondence of a cluster film transistor 10 one
Individual rgb pixel unit 20, each cluster film transistor include three thin film transistor (TFT)s 11,12 respectively positioned at the first to the third line
And 13, three thin film transistor (TFT)s 11,12 and 13 correspond to R sub-pixels in corresponding rgb pixel unit, G sub-pixel and the sub- pictures of B respectively
Element, in every a line, length-width ratio W/L of the conducting channel of all of thin film transistor (TFT) is incomplete same, and in preset ratio scope
It is interior, so that total leakage current of the row is in the range of predetermined current.
It should be noted that all of R sub-pixels of the correspondence of thin film transistor (TFT) 11 of the first row, the thin film transistor (TFT) of the second row
The all of G sub-pixel of 12 correspondences, all of R sub-pixels of the correspondence of thin film transistor (TFT) 13 of the third line.Wherein, the total leakage per a line
Electric current is the leakage current sum of each thin film transistor (TFT) in the row.The leakage current of each thin film transistor (TFT) is Id=0.5*
K*W/L* (Vgs-Vth) ^2 (wherein K, Vth are only related to the material of thin film transistor (TFT) constants) understands, when brilliant to film
Mono- timings of Vgs of body pipe, its drain current Id, breadth length ratio related to breadth length ratio W/L of the conducting channel of the thin film transistor (TFT)
W/L is more big, and then drain current Id is bigger, and more little then drain current Id is less for breadth length ratio W/L.Therefore, the present embodiment is right by changing
The length-width ratio of the thin film transistor (TFT) of the corresponding line of R sub-pixels, G sub-pixel and B sub-pixels is answered, total electric leakage of the row can be reduced
The size of stream, but also greater than one current threshold, so can make driving chip no longer on the premise of display effect is not affected
What formation one was larger takes out load, it is to avoid burr occurs in the control signal of driving chip output, so as to improve the aobvious of liquid crystal panel
Show quality, it is to avoid noise, and also reduce the power consumption of display module.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the feature described with reference to the embodiment or example
It is contained at least one embodiment or example of the present invention.In this manual, the schematic representation of above-mentioned term is differed
Surely identical embodiment or example are referred to.And, the specific features of description, structure, material or feature can be any one
Combined in individual or multiple embodiments or example in an appropriate manner.
Embodiments described above, does not constitute the restriction to the technical scheme protection domain.It is any in above-mentioned enforcement
Modification, equivalent and improvement made within the spirit and principle of mode etc., should be included in the protection model of the technical scheme
Within enclosing.
Claims (11)
1. a kind of thin-film transistor array base-plate, it is characterised in that：The thin-film transistor array base-plate includes that many cluster films are brilliant
Body pipe and multiple rgb pixel units, a cluster film transistor one rgb pixel unit of correspondence, each cluster film transistor include
Respectively positioned at three thin film transistor (TFT)s of the first to the third line, three thin film transistor (TFT)s are corresponded in corresponding rgb pixel unit respectively
R sub-pixels, G sub-pixel and B sub-pixels, per a line in all of thin film transistor (TFT) conducting channel the incomplete phase of length-width ratio
Together, and in the range of preset ratio, so that total leakage current of the row is in the range of predetermined current.
2. thin-film transistor array base-plate as claimed in claim 1, it is characterised in that in the first row thin film transistor (TFT), phase
The length-width ratio of the conducting channel of adjacent two thin film transistor (TFT)s is different.
3. thin-film transistor array base-plate as claimed in claim 2, it is characterised in that the first row thin film transistor (TFT) includes 2N
Thin film transistor (TFT), N is natural number, and the length-width ratio of the conductive communication of 2N thin film transistor (TFT) is identical.
4. thin-film transistor array base-plate as claimed in claim 3, it is characterised in that the conduction of 2N-1 thin film transistor (TFT)
The length-width ratio of communication is identical, and different from the length-width ratio of the conductive communication of 2N thin film transistor (TFT).
5. thin-film transistor array base-plate as claimed in claim 1, it is characterised in that in the second row thin film transistor (TFT), phase
The length-width ratio of the conducting channel of adjacent two thin film transistor (TFT)s is different.
6. thin-film transistor array base-plate as claimed in claim 5, it is characterised in that the second row thin film transistor (TFT) includes 2N
Thin film transistor (TFT), N is natural number, and the length-width ratio of the conductive communication of 2N thin film transistor (TFT) is identical.
7. thin-film transistor array base-plate as claimed in claim 6, it is characterised in that the conduction of 2N-1 thin film transistor (TFT)
The length-width ratio of communication is identical.
8. thin-film transistor array base-plate as claimed in claim 1, it is characterised in that in the third line thin film transistor (TFT), phase
The length-width ratio of the conducting channel of adjacent two thin film transistor (TFT)s is different.
9. thin-film transistor array base-plate as claimed in claim 8, it is characterised in that the third line thin film transistor (TFT) includes 2N
Thin film transistor (TFT), N is natural number, and the length-width ratio of the conductive communication of 2N thin film transistor (TFT) is identical.
10. thin-film transistor array base-plate as claimed in claim 9, it is characterised in that 2N-1 thin film transistor (TFT) is led
The length-width ratio that electricity is linked up is identical.
11. a kind of liquid crystal panels, including the thin-film transistor array base-plate as described in any one of claim 1-10, liquid crystal and coloured silk
Ilm substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN109671407A (en) * | 2019-01-14 | 2019-04-23 | 惠科股份有限公司 | A kind of array substrate, display panel and display device |
| WO2020062871A1 (en) * | 2018-09-29 | 2020-04-02 | Boe Technology Group Co., Ltd. | Thin film transistor, gate driver circuit and display apparatus |
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| CN106531745B (en) | 2019-12-03 |
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