CN106531745B - A kind of thin-film transistor array base-plate and liquid crystal display panel - Google Patents
A kind of thin-film transistor array base-plate and liquid crystal display panel Download PDFInfo
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- CN106531745B CN106531745B CN201611049222.8A CN201611049222A CN106531745B CN 106531745 B CN106531745 B CN 106531745B CN 201611049222 A CN201611049222 A CN 201611049222A CN 106531745 B CN106531745 B CN 106531745B
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- 239000010409 thin film Substances 0.000 title claims abstract description 142
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 27
- 238000004891 communication Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
Abstract
A kind of thin-film transistor array base-plate, including multiple groups thin film transistor (TFT) and multiple rgb pixel units, one cluster film transistor corresponds to a rgb pixel unit, each cluster film transistor include be located at first to the third line three thin film transistor (TFT)s, three thin film transistor (TFT)s respectively correspond R sub-pixel, G sub-pixel and B sub-pixel in corresponding rgb pixel unit, the length-width ratio of the conducting channel of all thin film transistor (TFT)s is not exactly the same in every a line, and within the scope of preset ratio, so that total leakage current of the row is within the scope of predetermined current.Since leakage current is only related to the breadth length ratio of the conducting channel of the thin film transistor (TFT), the breadth length ratio W/L the big, and then drain current is bigger, and the smaller then drain current of breadth length ratio is smaller.Therefore, there is burr in the control signal that the present invention avoids driving chip from exporting, improves the display quality of liquid crystal display panel, avoids noise, and also reduces the power consumption of display module.The present invention also provides a kind of liquid crystal display panels.
Description
Technical field
The present invention relates to a kind of field of display technology, more particularly, to a kind of voltage output control circuit and liquid crystal display
Device.
Background technique
With the development that small-medium size electronical display industry is maked rapid progress, people are to small-medium size LCD liquid crystal display screen
The the quality requirements such as resolution ratio also the next high.The raising of display quality and the transmission rate of display data and the integrality of signal have
Inseparable connection.Current small-medium size LCD display is opened simultaneously respectively within the time cycle that grid is opened
All multiplexers are opened, to complete the charging of RGB sub-pixel.But it while all multiplexers are opened, can lead
It causes display module moment to form a biggish pumping to liquid crystal display panel driving chip to carry, to will lead to the control of driving chip output
There is burr in signal processed, not only will affect display quality, generates noise, and will increase the power consumption of display module.
Summary of the invention
The purpose of the present invention is to provide a kind of thin-film transistor array base-plates, to mention high display quality, avoid generating and make an uproar
Sound, and reduce the power consumption of display module.
Another object of the present invention is to provide a kind of liquid crystal display panels.
To achieve the goals above, embodiment of the present invention provides the following technical solutions:
The present invention provides a kind of thin-film transistor array base-plate, including multiple groups thin film transistor (TFT) and multiple rgb pixel units,
One cluster film transistor corresponds to a rgb pixel unit, and each cluster film transistor includes being located at first to the third line
Three thin film transistor (TFT)s, three thin film transistor (TFT)s respectively correspond R sub-pixel, G sub-pixel and B in corresponding rgb pixel unit
Pixel, the length-width ratio of the conducting channel of all thin film transistor (TFT)s is not exactly the same in every a line, and in preset ratio range
It is interior, so that total leakage current of the row is within the scope of predetermined current.
Wherein, in the first row thin film transistor (TFT), the length-width ratio of the conducting channel of two neighboring thin film transistor (TFT) is different.
Wherein, the first row thin film transistor (TFT) includes 2N thin film transistor (TFT), and N is natural number, the 2N thin film transistor (TFT)
The length-width ratio of conductive communication is identical.
Wherein, the length-width ratio of the conductive communication of the 2N-1 thin film transistor (TFT) is identical, and with the 2N thin film transistor (TFT)
The length-width ratio of conductive communication is different.
Wherein, in the second row thin film transistor (TFT), the length-width ratio of the conducting channel of two neighboring thin film transistor (TFT) is different.
Wherein, the second row thin film transistor (TFT) includes 2N thin film transistor (TFT), and N is natural number, the 2N thin film transistor (TFT)
The length-width ratio of conductive communication is identical.
Wherein, the length-width ratio of the conductive communication of the 2N-1 thin film transistor (TFT) is identical.
Wherein, in the third line thin film transistor (TFT), the length-width ratio of the conducting channel of two neighboring thin film transistor (TFT) is different.
Wherein, the third line thin film transistor (TFT) includes 2N thin film transistor (TFT), and N is natural number, the 2N thin film transistor (TFT)
The length-width ratio of conductive communication is identical.
Wherein, the length-width ratio of the conductive communication of the 2N-1 thin film transistor (TFT) is identical.
The present invention also provides a kind of liquid crystal display panels, including above-mentioned thin-film transistor array base-plate, liquid crystal and color membrane substrates.
The embodiment of the present invention have the following advantages that or the utility model has the advantages that
Thin-film transistor array base-plate of the invention, including multiple groups thin film transistor (TFT) and multiple rgb pixel units are one group thin
Film transistor corresponds to a rgb pixel unit, and each cluster film transistor includes that be located at first three thin to the third line
Film transistor, three thin film transistor (TFT)s respectively correspond R sub-pixel, G sub-pixel and B sub-pixel in corresponding rgb pixel unit, often
The length-width ratio of the conducting channel of all thin film transistor (TFT)s is not exactly the same in a line, and within the scope of preset ratio, so that
Total leakage current of the row is obtained within the scope of predetermined current.Since leakage current is only long with the width of the conducting channel of the thin film transistor (TFT)
Than correlation, the breadth length ratio W/L the big, and then drain current is bigger, and the smaller then drain current of breadth length ratio is smaller.Therefore, the present embodiment passes through
Change the length-width ratio of the thin film transistor (TFT) of the corresponding line of corresponding R sub-pixel, G sub-pixel and B sub-pixel, the adjustable row it is total
Leakage current predetermined current range (as reducing the size of total leakage current of the row, but an also greater than current threshold),
In this way driving chip can be made not re-form a biggish pumping and carried, driving core is avoided under the premise of not influencing display effect
There is burr in the control signal of piece output, to improve the display quality of liquid crystal display panel, avoids noise, and also reduce
The power consumption of display module.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of circuit diagram for thin-film transistor array base-plate that first aspect of the present invention embodiment provides.
Fig. 2 is the cross sectional plan view of thin film transistor (TFT) in Fig. 1.
Fig. 3 is the section arrangement top view of thin film transistor (TFT) in Fig. 1.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, those of ordinary skill in the art are obtained all without making creative work
Other embodiments shall fall within the protection scope of the present invention.
In addition, the explanation of following embodiment is referred to the additional illustration, the spy that can be used to implement to illustrate the present invention
Determine embodiment.Direction terms mentioned in the present invention, for example, "upper", "lower", "front", "rear", "left", "right", "inner",
"outside", " side " etc. are only the directions with reference to annexed drawings, and therefore, the direction term used is to more preferably, more clearly say
The bright and understanding present invention, rather than indicate or imply signified device or element and must have a particular orientation, with specific square
Position construction and operation, therefore be not considered as limiting the invention.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be fixedly connected, is also possible to detachably connected, or integrally connects
It connects；It can be mechanical connection；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The connection in portion.For the ordinary skill in the art, the tool of above-mentioned term in the present invention can be understood with concrete condition
Body meaning.
In addition, in the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two or more.If this
Occur the term of " process " in specification, refers not only to independent process, when can not clearly be distinguished with other process, as long as
Effect desired by the process is able to achieve then to be also included in this term.In addition, the numerical value model indicated in this specification with "~"
Enclose the range for referring to that the numerical value for recording "~" front and back is included as minimum value and maximum value.In the accompanying drawings, structure
Similar or identical is indicated by the same numeral.
Fig. 1-Fig. 2 is please referred to, first aspect of the present invention embodiment provides a kind of thin-film transistor array base-plate 100.It is described
Thin-film transistor array base-plate 100 includes multiple groups thin film transistor (TFT) 10 and multiple rgb pixel units 20, a cluster film transistor 10
A corresponding rgb pixel unit 20, each cluster film transistor include be located at first to the third line three film crystals
Pipe 11,12 and 13, three thin film transistor (TFT)s 11,12 and 13 respectively correspond R sub-pixel, G sub-pixel in corresponding rgb pixel unit
And B sub-pixel, the length-width ratio W/L of the conducting channel of all thin film transistor (TFT)s is not exactly the same in every a line, and default
In proportional region, so that total leakage current of the row is within the scope of predetermined current.
It should be noted that the corresponding all R sub-pixels of the thin film transistor (TFT) 11 of the first row, the thin film transistor (TFT) of the second row
12 corresponding all G sub-pixels, the corresponding all R sub-pixels of the thin film transistor (TFT) 13 of the third line.Wherein, total leakage of every a line
Electric current is the sum of each of row leakage current of thin film transistor (TFT).The leakage current of each thin film transistor (TFT) is Id=0.5*
K*W/L* (Vgs-Vth) ^2 (wherein K, Vth are a constants relevant to the material of thin film transistor (TFT)) is it is found that when giving film crystalline substance
Mono- timing of Vgs of body pipe, Id, breadth length ratios related to the breadth length ratio W/L of the conducting channel of the thin film transistor (TFT) of drain current
The W/L the big, and then drain current Id is bigger, and the smaller then drain current Id of breadth length ratio W/L is smaller.Therefore, the present embodiment passes through change pair
Answer the length-width ratio of the thin film transistor (TFT) of the corresponding line of R sub-pixel, G sub-pixel and B sub-pixel, total electric leakage of the adjustable row
Stream in this way may be used predetermined current range (as reducing the size of total leakage current of the row, but an also greater than current threshold)
It is carried under the premise of not influencing display effect, making driving chip not re-form a biggish pumping, driving chip is avoided to export
Control signal there is burr, to improve the display quality of liquid crystal display panel, avoid noise, and also reduce display mould
The power consumption of group.
Referring to Fig. 3, in the present embodiment, in the first row thin film transistor (TFT) 11, two neighboring thin film transistor (TFT) 11
The length-width ratio W/L of conducting channel is different.
Specifically, the first row thin film transistor (TFT) 11 includes 2N thin film transistor (TFT), and N is natural number, the 2N film crystal
The length-width ratio W/L of the conductive communication of pipe 11 is identical.
It should be noted that the film on the even numbers positions such as second, four, six is brilliant in the thin film transistor (TFT) 11 of the first row
The length-width ratio W/L of the conducting channel of body pipe 11 is identical.
The length-width ratio of the conductive communication of the 2N-1 thin film transistor (TFT) 11 is identical, and leads with the 2N thin film transistor (TFT) 11
The length-width ratio that electricity is linked up is different.
It should be noted that the film in the odd positions such as first and third, five is brilliant in the thin film transistor (TFT) 11 of the first row
The length-width ratio W/L of the conducting channel of body pipe 11 is identical, and the length and width with the conducting channel of the thin film transistor (TFT) 11 on even number position
Than difference.In this way, in the first row thin film transistor (TFT) 11, the length-width ratio of the conducting channel of thin film transistor (TFT) 11 present it is large and small,
The large and small arrangement situation for being repeated in above-mentioned state, or arrangement situation that is small, large and small, being repeated in above-mentioned state greatly is presented.
In the present embodiment, the length of the conductive communication of the 2N thin film transistor (TFT) 11 is wider than the 2N-1 thin film transistor (TFT) 11
The length-width ratio of conductive communication.
In the present embodiment, the thin film transistor (TFT) 12 of second row also with 11 structure of the thin film transistor (TFT) of the first row and be in
Existing arrangement situation is identical.Specifically:
In second row thin film transistor (TFT) 12, the length-width ratio W/L of the conducting channel of two neighboring thin film transistor (TFT) 12 is not
Together.
Specifically, the second row thin film transistor (TFT) 12 includes 2N thin film transistor (TFT), and N is natural number, the 2N film crystal
The length-width ratio W/L of the conductive communication of pipe 12 is identical.
It should be noted that the film on the even numbers positions such as second, four, six is brilliant in the thin film transistor (TFT) 12 of the second row
The length-width ratio W/L of the conducting channel of body pipe 12 is identical.
The length-width ratio of the conductive communication of the 2N-1 thin film transistor (TFT) 12 is identical, and leads with the 2N thin film transistor (TFT) 12
The length-width ratio that electricity is linked up is different.
It should be noted that the film in the odd positions such as first and third, five is brilliant in the thin film transistor (TFT) 12 of the second row
The length-width ratio W/L of the conducting channel of body pipe 12 is identical, and the length and width with the conducting channel of the thin film transistor (TFT) 12 on even number position
Than difference.In this way, in the second row thin film transistor (TFT) 12, the length-width ratio of the conducting channel of thin film transistor (TFT) 12 present it is large and small,
The large and small arrangement situation for being repeated in above-mentioned state, or arrangement situation that is small, large and small, being repeated in above-mentioned state greatly is presented.
In the present embodiment, the structure of the third line thin film transistor (TFT) 13 and arrangement mode and first and second described row
Thin film transistor (TFT) 11 and 12 it is identical.Specifically:
In the third line thin film transistor (TFT) 13, the length-width ratio of the conducting channel of two neighboring thin film transistor (TFT) 13 is different.
It should be noted that the film on the even numbers positions such as second, four, six is brilliant in the thin film transistor (TFT) 13 of the third line
The length-width ratio W/L of the conducting channel of body pipe 13 is identical.
The length-width ratio of the conductive communication of the 2N-1 thin film transistor (TFT) 13 is identical, and leads with the 2N thin film transistor (TFT) 13
The length-width ratio that electricity is linked up is different.
It should be noted that the film in the odd positions such as first and third, five is brilliant in the thin film transistor (TFT) 13 of the third line
The length-width ratio W/L of the conducting channel of body pipe 13 is identical, and the length and width with the conducting channel of the thin film transistor (TFT) 13 on even number position
Than difference.In this way, in the second row thin film transistor (TFT) 13, the length-width ratio of the conducting channel of thin film transistor (TFT) 13 present it is large and small,
The large and small arrangement situation for being repeated in above-mentioned state, or arrangement situation that is small, large and small, being repeated in above-mentioned state greatly is presented.
In other embodiments, since the thin film transistor (TFT) of every a line is all independent from each other, described first to the third line
Thin film transistor (TFT) 11-13 can be with different in structure and arrangement mode.As long as meeting, all thin film transistor (TFT)s in every a line
The length-width ratio W/L of conducting channel is not exactly the same, and within the scope of preset ratio, so that total leakage current of the row is pre-
If in current range.
Second aspect of the present invention embodiment provides a kind of liquid crystal display panel 400.The liquid crystal display panel 400 includes thin film transistor (TFT)
Array substrate, liquid crystal 410 and color membrane substrates 420.Wherein, the thin-film transistor array base-plate is above-mentioned first scheme embodiment
The thin-film transistor array base-plate 100 of middle offer.Since thin-film transistor array base-plate 100 has carried out in first scheme in detail
It carefully describes, therefore details are not described herein.
In the present embodiment, the liquid crystal display panel 400 includes the thin-film transistor array base-plate 100.The film is brilliant
Body pipe array substrate 100 includes multiple groups thin film transistor (TFT) 10 and multiple rgb pixel units 20, a cluster film transistor 10 corresponding one
A rgb pixel unit 20, each cluster film transistor include be located at first to the third line three thin film transistor (TFT)s 11,12
And 13, three thin film transistor (TFT)s 11,12 and 13 respectively correspond R sub-pixel, G sub-pixel and B picture in corresponding rgb pixel unit
Element, the length-width ratio W/L of the conducting channel of all thin film transistor (TFT)s is not exactly the same in every a line, and in preset ratio range
It is interior, so that total leakage current of the row is within the scope of predetermined current.
It should be noted that the corresponding all R sub-pixels of the thin film transistor (TFT) 11 of the first row, the thin film transistor (TFT) of the second row
12 corresponding all G sub-pixels, the corresponding all R sub-pixels of the thin film transistor (TFT) 13 of the third line.Wherein, total leakage of every a line
Electric current is the sum of each of row leakage current of thin film transistor (TFT).The leakage current of each thin film transistor (TFT) is Id=0.5*
K*W/L* (Vgs-Vth) ^2 (wherein K, Vth are a constants relevant to the material of thin film transistor (TFT)) is it is found that when giving film crystalline substance
Mono- timing of Vgs of body pipe, Id, breadth length ratios related to the breadth length ratio W/L of the conducting channel of the thin film transistor (TFT) of drain current
The W/L the big, and then drain current Id is bigger, and the smaller then drain current Id of breadth length ratio W/L is smaller.Therefore, the present embodiment passes through change pair
The length-width ratio for answering the thin film transistor (TFT) of the corresponding line of R sub-pixel, G sub-pixel and B sub-pixel can reduce total electric leakage of the row
The size of stream, but an also greater than current threshold, can make driving chip no longer under the premise of not influencing display effect in this way
It forms a biggish pumping to carry, burr occurs in the control signal for avoiding driving chip from exporting, to improve the aobvious of liquid crystal display panel
Show quality, avoid noise, and also reduces the power consumption of display module.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means particular features, structures, materials, or characteristics described in conjunction with this embodiment or example
It is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are different
Surely identical embodiment or example is referred to.Moreover, the particular features, structures, materials, or characteristics of description can be any one
It can be combined in any suitable manner in a or multiple embodiment or examples.
Embodiments described above does not constitute the restriction to the technical solution protection scope.It is any in above-mentioned implementation
Made modifications, equivalent substitutions and improvements etc., should be included in the protection model of the technical solution within the spirit and principle of mode
Within enclosing.
Claims (8)
1. a kind of thin-film transistor array base-plate, it is characterised in that: the thin-film transistor array base-plate includes that multiple groups film is brilliant
Body pipe and multiple rgb pixel units, the corresponding rgb pixel unit of a cluster film transistor, each cluster film transistor include
Be located at first to the third line three thin film transistor (TFT)s, three thin film transistor (TFT)s respectively correspond in corresponding rgb pixel unit
R sub-pixel, G sub-pixel and B sub-pixel, the incomplete phase of length-width ratio of the conducting channel of all thin film transistor (TFT)s in every a line
Together, and within the scope of preset ratio, so that total leakage current of the row is within the scope of predetermined current, the first row film crystal
Pipe includes 2N thin film transistor (TFT), and N is natural number, and the length-width ratio of the conducting channel of the thin film transistor (TFT) on even number position is identical,
The length-width ratio of the conducting channel of thin film transistor (TFT) in odd positions is identical, and the conduction with the thin film transistor (TFT) on even number position
The length-width ratio of channel is different.
2. thin-film transistor array base-plate as described in claim 1, which is characterized in that in the second row thin film transistor (TFT), phase
The length-width ratio of the conducting channel of adjacent two thin film transistor (TFT)s is different.
3. thin-film transistor array base-plate as claimed in claim 2, which is characterized in that the second row thin film transistor (TFT) includes 2N
Thin film transistor (TFT), N are natural number, and the length-width ratio of the conductive communication of the thin film transistor (TFT) on even number position is identical.
4. thin-film transistor array base-plate as claimed in claim 3, which is characterized in that thin film transistor (TFT) in odd positions
The length-width ratio of conductive communication is identical.
5. thin-film transistor array base-plate as described in claim 1, which is characterized in that in the third line thin film transistor (TFT), phase
The length-width ratio of the conducting channel of adjacent two thin film transistor (TFT)s is different.
6. thin-film transistor array base-plate as claimed in claim 5, which is characterized in that the third line thin film transistor (TFT) includes 2N
Thin film transistor (TFT), N are natural number, and the length-width ratio of the conductive communication of the thin film transistor (TFT) on even number position is identical.
7. thin-film transistor array base-plate as claimed in claim 6, which is characterized in that thin film transistor (TFT) in odd positions
The length-width ratio of conductive communication is identical.
8. a kind of liquid crystal display panel, including such as the described in any item thin-film transistor array base-plates of claim 1-7, liquid crystal and color film
Substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN109309100B (en) | 2018-09-29 | 2020-12-29 | 京东方科技集团股份有限公司 | Thin film transistor, gate drive circuit and display panel |
| CN109671407B (en) * | 2019-01-14 | 2020-12-29 | 惠科股份有限公司 | Array substrate, display panel and display device |
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| KR101142785B1 (en) * | 2005-06-28 | 2012-05-08 | 엘지디스플레이 주식회사 | Liquid crystal display device including thin film transistor |
| CN103969875B (en) * | 2014-05-04 | 2016-06-29 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, mask plate, mask plate group |
| CN104465669A (en) * | 2014-12-04 | 2015-03-25 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method of array substrate and display device |
| CN104656334B (en) * | 2015-03-20 | 2017-08-01 | 京东方科技集团股份有限公司 | A kind of array base palte and display device |
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