CN106527065B - A kind of photoresist developer - Google Patents
A kind of photoresist developer Download PDFInfo
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- CN106527065B CN106527065B CN201710062714.9A CN201710062714A CN106527065B CN 106527065 B CN106527065 B CN 106527065B CN 201710062714 A CN201710062714 A CN 201710062714A CN 106527065 B CN106527065 B CN 106527065B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a kind of photoresist developer, including water, nonionic surfactant and inorganic base, nonionic surfactant includes castor oil polyoxyethylene ether, Formulas I general structure compound represented,
Description
Technical field
The present invention relates to make in manufacture semiconductor device, flat-panel monitor, LED, flip chip package, tartar and sophisticated sensor
Photoresist developer field.
Background technique
Photoresist (also known as photoresist) refers to through ultraviolet light, excimer laser, electron beam, ion beam, X-ray etc.
The irradiation or radiation of light source, the changed etch resistant thin-film material of solubility.Development is exactly place to go exposure photo-etching glue
Technical process.In order to avoid photoresist changes its chemical structure because of other possible side reactions, should be shown as early as possible after exposure
Shadow.Development treatment usually is carried out to photoresist using developer solution.
Existing common developer solution component, the usually combination of surfactant, alkali compounds and water, at development
The purpose of reason is usually to obtain no residue, development figure with high accuracy.Such as
ZL2009100839491 is related to a kind of developing agent for flat-panel display, and the developer solution is by quaternary amine and non-ionic surface
Activating agent composition, development effect is good, and operation temperature is wide.ZL2010101390849 is related to a kind of low-tension developer for positive photoresist, by
Tetramethylammonium hydroxide, non-ionic surfactant polyoxyethylene ether composition, service life are long.ZL2012800148351 is related to one kind
The developer solution and the developer solution method for making pattern that do not collapse when forming fine pattern, the developer solution by butyl acetate and
Alcohols composition.ZL201210461049.8 is related to a kind of negative photo glue developing solution and extremely applies, which is suitable for TFT-
LCD industry is prized the development of film negative photoresist.ZL2011102438981 is related to a kind of development of photoresist liquid and preparation side
Method, for the developer solution without residue, foam is few.
Also the developer solution having is in order to obtain wider range of operating temperature range, as CN201110243898.1 discloses one
Photic etchant developer solution of kind and the preparation method and application thereof.The developer solution includes organic alkaline matter, non-ionic surface work
Property agent, polyethylene glycol per-fluoro octanoate and water shown in Formulas I there is good developing performance, low foam, without residual without adding defoaming agent
The features such as slag, wide operating temperature range.CN200710180521.X has opened a kind of developing solution for heat-sensitive positive picture CTP plate.The development
Liquid contains: diethanol amine, triethylamine, triethanolamine, the hydroxide of alkali metal, alkali metal silicate of (A) 10-40 parts by weight
At least one of salt, alkali metal phosphate alkali compounds.It is wide with permissible operating temperature range, areas is density stabilized
Property is good, versatility is good, fatigue resistance is high etc. advantage.CN200910083949.1 discloses a kind of developing agent for flat-panel display,
The developer solution has the characteristics that developing performance is good, wide, low in the pollution of the environment without residue, operating temperature range.
Few documents or periodical are related to the issue of improvement of developer solution technique remaining.So-called technique remaining just refers to
In one developing process treatment process, production technology is various by changing different temperature, developing time and solution level etc.
The stability of its performance can still be maintained in process conditions, developer solution.The prior art is successively developed to different photoresists
After processing, after a kind of each pair of photoresist developing processing of developer solution, developing performance can become unstable, and development effect gradually becomes
Difference, it is necessary to which, to the developer solution after use is replaced, the developer solution more renewed can carry out the development treatment of new photoresist, and can not
Only carry out the processing for a variety of photoresists by adjusting light exposure and film thickness, the technique remaining of such developer solution is poor, adaptation
Photoresist type is limited.
Summary of the invention
It is an object of that present invention to provide a kind of photoresist developer, which has excellent technique remaining,
It can come the processing for a variety of photoresists, development timeliness length, the scope of application of development only by adjustment light exposure and film thickness
Width, and the developer solution, when coping with different various photoresists, development effect is good, and fixing efficiency and development precision are high, show
Shadow stability is good, and can shorten cream time.
The present invention is achieved through the following technical solutions:
A kind of photoresist developer, including water, nonionic surfactant and inorganic base, nonionic surfactant include
Castor oil polyoxyethylene ether, Formulas I general structure compound represented,
Developer solution of the invention can once shown
During shadow, different photoresists is handled, and maintains the stabilization of developer solution performance, so that the development figure of each photoresist is clear
Clear, development precision is high, in development process, can obtain different only by changing different light exposure and film thickness
The high development precision of photoresist, improves developer solution process allowance, expands its scope of application.
Inorganic base is KOH.Potassium hydroxide can make certain tribute in development process to the stabilization of developing performance
It offers.
The quality of inorganic base is the 3-5% of photoresist developer gross mass, and the quality of nonionic surfactant is photoetching
The 1-10% of glue developing solution gross mass, surplus are water.The inorganic base and nonionic surfactant of this weight range can be
In developing process, improves the development precision of each different photoresist, reduces foam time, enable low bubble in 30s
It inside completely disappears, development is moderate within the scope of this, will not cross development or development is too late, and developer solution is stored up in -5~40 DEG C of conditions
It deposits and using without medical fluid lamination, for the effective Storage period of longest up to 2 years, stability was high.
The quality of inorganic base is the 3.5-4.5% of photoresist developer gross mass.When inorganic base quality within this range
When, the line width and taper angle of figure are able to maintain in a stable range, and development effect is efficiently stablized.
The quality of nonionic surfactant is the 6-10% of photoresist developer solution gross mass.
N is the integer less than or equal to 10.
N=1 or 2.When the value of n within this range when, since the number of c is smaller, steric hindrance may be made opposite
Become smaller, and makes development effect more preferably.
Weight ratio between castor oil polyoxyethylene ether, Formulas I general structure compound represented is 1-3:5.In this range
The variation range value of the line width of interior photoresist is constant within 0.2 micron, illustrates that the development effect of photoresist is more preferable, develops and miss
Difference is small.
The compound of Formula I in photoresist developer in the present invention is existing compound, passes through ester water for Tuliposide
Solution, resterification addition and obtain.
Weight ratio between castor oil polyoxyethylene ether, Formulas I general structure compound represented is 3:5.
Compared with prior art, the present invention having the following advantages and benefits:
1, developer solution of the invention has excellent technique remaining, can be used for only by adjustment light exposure and film thickness
The processing of a variety of photoresists, development timeliness is long, the scope of application of development is wide；
2, for developer solution of the invention when coping with the various photoresists of different developing times, development effect is good, development
Efficiency and development precision are high, and stable developing is good, and can shorten cream time.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below with reference to embodiment, the present invention is made
Further to be described in detail, exemplary embodiment of the invention and its explanation for explaining only the invention, are not intended as to this
The restriction of invention.
Changed with the proportion of additive, prepare developer solution embodiment 1-10, it is that n takes 1 entirely in I that wherein developer solution, which takes general formula,.
It is that n takes 2 in I that developer solution, which takes general formula, in embodiment 11.Each reagent in embodiment can pass through commercially available acquisition.Castor oil polyoxy second
Alkene ether can be the series of EL-10,12,20,30,40.
Embodiment 1
Negated 5 parts by weight of ionic surface active agent of developer solution and 3 parts by weight of inorganic base, water are 92 parts by weight.Inorganic base is
Common alkali metal hydroxide, alkaline compound etc..Potassium hydroxide is all chosen for convenience of comparing embodiment as developer solution
Alkali compounds.
Embodiment 2
Negated 8 parts by weight of ionic surface active agent of developer solution and 5 parts by weight of potassium hydroxide, water are 87 parts by weight.
Embodiment 3
Negated 6 parts by weight of ionic surface active agent of developer solution and 3.5 parts by weight of potassium hydroxide, water are 90.5 parts by weight.
Embodiment 4
Negated 10 parts by weight of ionic surface active agent of developer solution and 4.5 parts by weight of potassium hydroxide, water are 85.5 parts by weight.
Embodiment 5
Negated 1 parts by weight of ionic surface active agent of developer solution and 3 parts by weight of potassium hydroxide, water are 96 parts by weight.
Embodiment 6
Negated 6 parts by weight of ionic surface active agent of developer solution and 4.4 parts by weight of potassium hydroxide, water are 89.6 parts by weight.
Embodiment 7
Negated 6 parts by weight of ionic surface active agent of developer solution and 3.6 parts by weight of potassium hydroxide, water are 89.4 parts by weight.
Embodiment 8
Negated 6 parts by weight of ionic surface active agent of developer solution and 4.5 parts by weight of potassium hydroxide, water are 89.5 parts by weight.
Embodiment 9
Negated 6 parts by weight of ionic surface active agent of developer solution and 4.0 parts by weight of potassium hydroxide, water are 90 parts by weight.It is non-from
In sub- surfactant, the weight ratio between castor oil polyoxyethylene ether, Formulas I general structure compound represented is 1:5.
Embodiment 10
Negated 10 parts by weight of ionic surface active agent of developer solution and 4.0 parts by weight of potassium hydroxide, water are 86 parts by weight.It is non-from
In sub- surfactant, the weight ratio between castor oil polyoxyethylene ether, Formulas I general structure compound represented is 3:5.
Embodiment 11
Negated 10 parts by weight of ionic surface active agent of developer solution and 4.0 parts by weight of potassium hydroxide, water are 86 parts by weight.It is non-from
In sub- surfactant, the weight ratio between castor oil polyoxyethylene ether, Formulas I general structure compound represented is 3:5, n=
2。
The development capability of developer solution to illustrate the invention, inventor have done well known experiment, experimental method: will
50ml developer solution is put into beaker, shakes 1min, measures foam height every 1min, until lather collapse, quiet after concussion one minute
It sets.Have evaluated pattern situations when complete development, showing in foam situation of change, with prior art 1:CN200910083949.1
Shadow liquid；Developer solution in prior art 2:ZL2010101881253 compares, and see the table below.
The development effect obtained such as table 1.
1 development effect of table: residue retain, graphic edge clearly whether hairiness defect
Technique remaining in order to further illustrate the present invention is wide:
The photoresist that the normal development time is 80s is carried out the adjustment in the positive and negative 20s of developing time by the present invention, with same
Development effect is tested for concentration range.By taking embodiment 2-5 as an example, the figure that line width is 20 microns carries out development treatment and tests it
Line width within the scope of 40-80s.
The figure development effect that 2 line width of table is 20 microns
As can be seen from the above table, in the developing time of 60s-100s, the effect of photoresist can be maintained substantially, work
Skill operates that surplus is wide, and developer solution has such performance, can be according to the different development timeliness of different photoresists and film thickness
It is required that carrying out the disposable development treatment of the same developer solution of different photoresists, the processing scope of application is improved.
To further illustrate beneficial effects of the present invention, comparative example 1: negated 10 weight of ionic surface active agent of developer solution is set
Part and 4.0 parts by weight of potassium hydroxide are measured, water is 86 parts by weight.In nonionic surfactant, castor oil polyoxyethylene ether, Formulas I
Weight ratio between general structure compound represented is 1:6.Comparative example 2: negated 10 weight of ionic surface active agent of developer solution
Part and 4.0 parts by weight of potassium hydroxide, water are 86 parts by weight.In nonionic surfactant, castor oil polyoxyethylene ether, Formulas I knot
Weight ratio between structure general formula compound represented is 1:10.Comparative example 3: only addition 6 parts by weight of castor oil polyoxyethylene ether and
4.0 parts by weight of potassium hydroxide, water are 86 parts by weight, comparative example 4: only addition general structure I6 parts by weight and 4.0 weight of potassium hydroxide
Part is measured, water is 86 parts by weight, and the adjustment in the positive and negative 20s that the photoresist that the normal development time is 80s carries out developing time is surveyed
Examination development effect is compared as follows shown in table with the development effect of embodiment 10,11.
Development effect between 3 comparative example of table and embodiment compares
As can be seen from the above table, the developer formula of non-present invention range floats up and down certain within the normal development time
Time, figure line width variation is larger, and figure line width is unstable, also means that the scope of application of developer solution is not wide, can not be one
In secondary development treatment, the photoresist of different developing time sections is handled.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (8)
1. a kind of photoresist developer, which is characterized in that including water, nonionic surfactant and inorganic base, non-ionic surface
Activating agent includes castor oil polyoxyethylene ether, Formulas I general structure compound represented,
,
N in formula I is the integer less than or equal to 10.
2. photoresist developer according to claim 1, which is characterized in that inorganic base KOH.
3. photoresist developer according to claim 1, which is characterized in that the quality of inorganic base is that photoresist developer is total
The 3-5% of quality, the quality of nonionic surfactant are the 1-10% of photoresist developer gross mass, and surplus is water.
4. photoresist developer according to claim 3, which is characterized in that the quality of inorganic base is that photoresist developer is total
The 3.5-4.5% of quality.
5. photoresist developer according to claim 3, which is characterized in that the quality of nonionic surfactant is photoetching
The 6-10% of glue developing solution gross mass.
6. photoresist developer according to claim 1, which is characterized in that n=1 or 2.
7. photoresist developer according to claim 1, which is characterized in that castor oil polyoxyethylene ether, Formulas I general structure
Weight ratio between compound represented is 1-3:5.
8. photoresist developer according to claim 7, which is characterized in that castor oil polyoxyethylene ether, Formulas I general structure
Weight ratio between compound represented is 3:5.
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| CN201710062714.9A CN106527065B (en) | 2017-01-25 | 2017-01-25 | A kind of photoresist developer |
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| CN201710062714.9A CN106527065B (en) | 2017-01-25 | 2017-01-25 | A kind of photoresist developer |
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| CN106527065B true CN106527065B (en) | 2019-06-28 |
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| CN108594606A (en) * | 2018-04-13 | 2018-09-28 | 深圳达诚清洗剂有限公司 | A kind of negative photo glue developing solution |
| CN116149147B (en) * | 2023-04-24 | 2023-07-14 | 甘肃华隆芯材料科技有限公司 | Photoresist developer and preparation method and application thereof |
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| CN106227003A (en) * | 2016-09-29 | 2016-12-14 | 杭州格林达化学有限公司 | A kind of developer composition and preparation method thereof |
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