CN106527065A - Photoresist developing solution - Google Patents
Photoresist developing solution Download PDFInfo
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- CN106527065A CN106527065A CN201710062714.9A CN201710062714A CN106527065A CN 106527065 A CN106527065 A CN 106527065A CN 201710062714 A CN201710062714 A CN 201710062714A CN 106527065 A CN106527065 A CN 106527065A
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- Prior art keywords
- photoresist
- developer solution
- development
- developing
- photoresist developer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a photoresist developing solution, which comprises water, a nonionic surfactant and inorganic base, wherein the nonionic surfactant comprises castor oil polyoxyethylene ether and a chemical compound shown in a structural formula I in the description. The developing solution provided by the invention has an excellent process redundancy, can be used for process of various photoresist only by regulating exposure quantity and film thickness, and has a long developing aging and a wide application range of developing.
Description
Technical field
The present invention relates to make in manufacture semiconductor device, flat faced display, LED, flip chip package, tartar and sophisticated sensor
Photoresist developer field.
Background technology
Photoresist (also known as photoresist) is referred to by ultraviolet light, excimer laser, electron beam, ion beam, X-ray etc.
The irradiation or radiation of light source, the etch resistant thin-film material that its dissolubility changes.Development is exactly place to go exposure photo-etching glue
Technical process.In order to avoid photoresist changes its chemical constitution because of other possible side reactions, should be shown as early as possible after exposure
Shadow.Being frequently used developer solution carries out development treatment to photoresist.
Existing common developer solution component, the usually combination of surfactant, alkali compoundss and water, at its development
The purpose of reason is usually to obtain the figure without residue, development high precision.Such as
ZL2009100839491 is related to a kind of developing agent for flat-panel display, and the developer solution is by quaternary amine and non-ionic surface
Activating agent is constituted, and development effect is good, operation temperature width.ZL2010101390849 is related to a kind of low-tension developer for positive photoresist, by
Tetramethylammonium hydroxide, non-ionic surfactant polyoxyethylene ether composition, life-span length.ZL2012800148351 is related to one kind
The developer solution that do not collapse and the developer solution method for making pattern when forming fine pattern, the developer solution by butyl acetate and
Alcohols is constituted.ZL201210461049.8 is related to a kind of negative photo glue developing solution and extremely applies, and the developer solution is suitable for TFT-
LCD industries are prized the development of film negative photoresist.ZL2011102438981 is related to a kind of development of photoresist liquid and preparation side
Method, without residue, foam is few for the developer solution.
Also the developer solution having is that, in order to obtain wider range of operating temperature range, such as CN201110243898.1 discloses one
Plant photic etchant developer solution and preparation method and application.The developer solution includes that organic alkaline matter, non-ionic surface are lived
Property agent, Polyethylene Glycol per-fluoro octanoate and water shown in Formulas I, need not add defoamer, with developing performance is good, low foam, without residual
The features such as slag, operating temperature range width.CN200710180521.X has opened a kind of developing solution for heat-sensitive positive picture CTP plate.The development
Liquid contains：(A) diethanolamine of 10-40 weight portions, triethylamine, triethanolamine, alkali-metal hydroxide, alkali metal silicate
At least one alkali compoundss in salt, alkali metal phosphate.With permissible operating temperature range is wide, areas are density stabilized
Good, versatility is good, fatigue resistance is high etc. advantage for property.CN200910083949.1 discloses a kind of developing agent for flat-panel display,
The developer solution have developing performance it is good, without residue, operating temperature range width, it is low in the pollution of the environment the features such as.
Seldom there are document or periodical to be related to the issue of improvement of developer solution technique remaining.So-called technique remaining is just referred to
In one developing process processing procedure, production technology is various by changing different temperature, developing time and solution level etc.
Process conditions, developer solution are maintained to the stability of its performance.Prior art is carrying out priority development to different photoresists
After process, after a kind of photoresist developing of developer solution each pair is processed, its developing performance can become unstable, and development effect gradually becomes
Difference, it is necessary to which, to replacing the developer solution after use, the developer solution for more renewing can carry out the development treatment of new photoresist, and cannot
Only by adjusting light exposure and thickness come the process for various photoresists, the technique remaining of this kind of developer solution is poor, adaptation
Photoresist limitednumber.
The content of the invention
Present invention aim at providing a kind of photoresist developer, the photoresist developer has excellent technique remaining,
The process that can come for various photoresists only by adjustment light exposure and thickness, timeliness length of developing, the scope of application of development
Width, and the developer solution, when different various photoresists are tackled, its development effect is good, fixing efficiency and development high precision, show
Shadow good stability, and cream time can be shortened.
The present invention is achieved through the following technical solutions：
A kind of photoresist developer, including water, nonionic surfactant and inorganic base, nonionic surfactant includes
Compound shown in castor oil polyoxyethylene ether, Formulas I general structure,
The developer solution of the present invention in a developing process can be processed different photoresists, and maintain the steady of developer solution performance
It is fixed so that the development figure of each photoresist is clear, high precision of developing, in development process, can be only different by changing
Light exposure and film thickness, and obtain the high development precision of different photoresists, improve developer solution process allowance, expand which
The scope of application.
Inorganic base is KOH.Potassium hydroxide can make certain tribute to stablizing for developing performance in development process
Offer.
3-5% of the quality of inorganic base for photoresist developer gross mass, the quality of nonionic surfactant is photoetching
The 1-10% of glue developing solution gross mass, balance of water.Can be in the inorganic base and nonionic surfactant of this weight range
In developing process, improve the development precision of each different photoresist, reduce foam time so that low bubble can be in 30s
Inside it is wholly absent, in the range of this, develops moderate, development will not be crossed or develop too late, and developer solution is stored up in -5～40 DEG C of conditions
Deposit and without medicinal liquid lamination, up to 2 years, stability is high for most long effective Storage period using.
3.5-4.5% of the quality of inorganic base for photoresist developer gross mass.When inorganic base quality within this range
When, the live width and taper angles of figure can be maintained in a stable scope, and development effect is efficiently stablized.
6-10% of the quality of nonionic surfactant for photoresist developer solution gross mass.
N is the integer less than or equal to 10.
N=1 or 2.When the value of n is in the range of this, as the number of c is less, may cause sterically hindered relative
Diminish, and cause development effect more preferably.
Weight ratio between compound shown in castor oil polyoxyethylene ether, Formulas I general structure is 1-3:5.In this scope
The excursion value of the live width of interior photoresist is constant within 0.2 micron, illustrates that the development effect of photoresist is more preferable, development is missed
Difference is little.
The compound of Formula I in photoresist developer in the present invention is existing compound, is Tuliposide through ester water
Solution, resterification addition and obtain.
Weight ratio between compound shown in castor oil polyoxyethylene ether, Formulas I general structure is 3:5.
The present invention compared with prior art, has the following advantages and advantages：
1st, developer solution of the invention has excellent technique remaining, can only by adjustment light exposure and thickness come for
The process of various photoresists, timeliness length of developing, the scope of application width of development；
2nd, in the various photoresists of the different developing times of reply, its development effect is good, development for developer solution of the invention
Efficiency and development high precision, stable developing is good, and can shorten cream time.
Specific embodiment
For making the object, technical solutions and advantages of the present invention become more apparent, with reference to embodiment, to present invention work
Further detailed description, the exemplary embodiment of the present invention and its explanation are only used for explaining the present invention, are not intended as to originally
The restriction of invention.
Being changed with the proportioning of additive, preparing developer solution embodiment 1-10, wherein developer solution takes formula and 1 taken entirely for n in I.
In embodiment 11, developer solution takes formula and takes 2 for n in I.Each reagent in embodiment can be by commercially available acquisition.Oleum Ricini polyoxy second
Alkene ether can be serial for EL-10,12,20,30,40.
Embodiment 1
Negated 5 weight portion of ionic surface active agent of developer solution and 3 weight portion of inorganic base, water are 92 weight portions.Inorganic base is
Common alkali metal hydroxide, alkaline compound etc..Potassium hydroxide is chosen all as developer solution for convenience of comparing embodiment
Alkali compoundss.
Embodiment 2
Negated 8 weight portion of ionic surface active agent of developer solution and 5 weight portion of potassium hydroxide, water are 87 weight portions.
Embodiment 3
Negated 6 weight portion of ionic surface active agent of developer solution and 3.5 weight portion of potassium hydroxide, water are 90.5 weight portions.
Embodiment 4
Negated 10 weight portion of ionic surface active agent of developer solution and 4.5 weight portion of potassium hydroxide, water are 85.5 weight portions.
Embodiment 5
Negated 1 weight portion of ionic surface active agent of developer solution and 3 weight portion of potassium hydroxide, water are 96 weight portions.
Embodiment 6
Negated 6 weight portion of ionic surface active agent of developer solution and 4.4 weight portion of potassium hydroxide, water are 89.6 weight portions.
Embodiment 7
Negated 6 weight portion of ionic surface active agent of developer solution and 3.6 weight portion of potassium hydroxide, water are 89.4 weight portions.
Embodiment 8
Negated 6 weight portion of ionic surface active agent of developer solution and 4.5 weight portion of potassium hydroxide, water are 89.5 weight portions.
Embodiment 9
Negated 6 weight portion of ionic surface active agent of developer solution and 4.0 weight portion of potassium hydroxide, water are 90 weight portions.It is non-from
In sub- surfactant, the weight ratio between the compound shown in castor oil polyoxyethylene ether, Formulas I general structure is 1:5.
Embodiment 10
Negated 10 weight portion of ionic surface active agent of developer solution and 4.0 weight portion of potassium hydroxide, water are 86 weight portions.It is non-from
In sub- surfactant, the weight ratio between the compound shown in castor oil polyoxyethylene ether, Formulas I general structure is 3:5.
Embodiment 11
Negated 10 weight portion of ionic surface active agent of developer solution and 4.0 weight portion of potassium hydroxide, water are 86 weight portions.It is non-from
In sub- surfactant, the weight ratio between the compound shown in castor oil polyoxyethylene ether, Formulas I general structure is 3:5, n=
2。
The development capability of developer solution to illustrate the invention, inventor have done known experiment, experimental technique：Will
50ml developer solutions are put into beaker, shake 1min, measure foam height every 1min, until lather collapse, quiet after shaking one minute
Put.Have evaluated completely development when pattern situations, foam situation of change, with prior art 1：It is aobvious in CN200910083949.1
Shadow liquid；Prior art 2：Developer solution in ZL2010101881253 is contrasted, and be see the table below.
The development effect for drawing such as table 1.
1 development effect of table：Residue is retained, the clear whether hairiness defect of pattern edge
In order to further illustrate the technique remaining width of the present invention：
The photoresist that the normal development time is 80s is carried out the present invention adjustment in the positive and negative 20s of developing time, with same
Development effect is tested as a example by concentration range.By taking embodiment 2-5 as an example, live width is that 20 microns of figure carries out development treatment and tests which
Live width in the range of 40-80s.
2 live width of table is 20 microns of figure development effect
As can be seen from the above table, in the developing time of 60s-100s, the effect of photoresist can be maintained substantially, work
Skill operates surplus width, and developer solution has such performance, can be according to the different development timeliness of different photoresists and film thickness
Require, carry out the disposable development treatment of the same developer solution of different photoresists, improve the process scope of application.
For further illustrating beneficial effects of the present invention, comparative example 1 is set：Negated 10 weight of ionic surface active agent of developer solution
Amount 4.0 weight portion of part and potassium hydroxide, water are 86 weight portions.In nonionic surfactant, castor oil polyoxyethylene ether, Formulas I
Weight ratio between compound shown in general structure is 1:6.Comparative example 2：Negated 10 weight of ionic surface active agent of developer solution
Part and 4.0 weight portion of potassium hydroxide, water are 86 weight portions.In nonionic surfactant, castor oil polyoxyethylene ether, Formulas I knot
Weight ratio between compound shown in structure formula is 1:10.Comparative example 3：Only addition 6 weight portion of castor oil polyoxyethylene ether and
4.0 weight portion of potassium hydroxide, water be 86 weight portions, comparative example 4：Only add 4.0 weight of general structure I6 weight portions and potassium hydroxide
Amount part, water are 86 weight portions, and the adjustment in the positive and negative 20s that the photoresist that the normal development time is 80s carries out developing time is surveyed
Examination development effect is compared as follows shown in table with the development effect of embodiment 10,11.
Development effect between 3 comparative example of table and embodiment compares
As can be seen from the above table, the developer formula of non-invention scope, fluctuates within the normal development time certain
Time, figure line width variation are larger, and figure live width is unstable, also imply that the scope of application of developer solution is not wide, it is impossible to one
In secondary development treatment, the photoresist of different developing time sections is processed.
Above-described specific embodiment, has been carried out further to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail, the be should be understood that specific embodiment that the foregoing is only the present invention is not intended to limit the present invention
Protection domain, all any modification, equivalent substitution and improvements within the spirit and principles in the present invention, done etc. all should include
Within protection scope of the present invention.
Claims (9)
1. a kind of photoresist developer, it is characterised in that including water, nonionic surfactant and inorganic base, non-ionic surface
Activating agent includes the compound shown in castor oil polyoxyethylene ether, Formulas I general structure,
2. photoresist developer according to claim 1, it is characterised in that inorganic base is KOH.
3. photoresist developer according to claim 1, it is characterised in that the quality of inorganic base is that photoresist developer is total
The 3-5% of quality, the 1-10% of the quality of nonionic surfactant for photoresist developer solution gross mass, balance of water.
4. photoresist developer according to claim 3, it is characterised in that the quality of inorganic base is that photoresist developer is total
The 3.5-4.5% of quality.
5. photoresist developer according to claim 3, it is characterised in that the quality of nonionic surfactant is photoresist
The 6-10% of developer solution gross mass.
6. photoresist developer according to claim 1, it is characterised in that integers of the n less than or equal to 10.
7. photoresist developer according to claim 6, it is characterised in that n=1 or 2.
8. photoresist developer according to claim 1, it is characterised in that castor oil polyoxyethylene ether, Formulas I general structure
Weight ratio between shown compound is 1-3:5.
9. photoresist developer according to claim 8, it is characterised in that castor oil polyoxyethylene ether, Formulas I general structure
Weight ratio between shown compound is 3:5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710062714.9A CN106527065B (en) | 2017-01-25 | 2017-01-25 | A kind of photoresist developer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710062714.9A CN106527065B (en) | 2017-01-25 | 2017-01-25 | A kind of photoresist developer |
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| Publication Number | Publication Date |
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| CN106527065A true CN106527065A (en) | 2017-03-22 |
| CN106527065B CN106527065B (en) | 2019-06-28 |
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| CN201710062714.9A Active CN106527065B (en) | 2017-01-25 | 2017-01-25 | A kind of photoresist developer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108594606A (en) * | 2018-04-13 | 2018-09-28 | 深圳达诚清洗剂有限公司 | A kind of negative photo glue developing solution |
| CN116149147A (en) * | 2023-04-24 | 2023-05-23 | 甘肃华隆芯材料科技有限公司 | Photoresist developer and preparation method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012057617A2 (en) * | 2010-10-26 | 2012-05-03 | Universiteit Leiden | Method for the production of glycosides from bulbs and use of the glycosides thus produced |
| CN106227003A (en) * | 2016-09-29 | 2016-12-14 | 杭州格林达化学有限公司 | A kind of developer composition and preparation method thereof |
-
2017
- 2017-01-25 CN CN201710062714.9A patent/CN106527065B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012057617A2 (en) * | 2010-10-26 | 2012-05-03 | Universiteit Leiden | Method for the production of glycosides from bulbs and use of the glycosides thus produced |
| CN106227003A (en) * | 2016-09-29 | 2016-12-14 | 杭州格林达化学有限公司 | A kind of developer composition and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108594606A (en) * | 2018-04-13 | 2018-09-28 | 深圳达诚清洗剂有限公司 | A kind of negative photo glue developing solution |
| CN116149147A (en) * | 2023-04-24 | 2023-05-23 | 甘肃华隆芯材料科技有限公司 | Photoresist developer and preparation method and application thereof |
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| Publication number | Publication date |
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| CN106527065B (en) | 2019-06-28 |
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