CN106524080A

CN106524080A - LED lighting integrated heat transferring and heat exchanging device

Info

Publication number: CN106524080A
Application number: CN201610982403.XA
Authority: CN
Inventors: 吴鸿平
Original assignee: Individual
Current assignee: Individual
Priority date: 2016-11-09
Filing date: 2016-11-09
Publication date: 2017-03-22

Abstract

The invention discloses an LED lighting chip and a junction temperature heat treating device thereof. Especially, LED wafer particles are integrated into an integrated heat transferring chip without heat sink, the heat transferring chip is welded to a pipeline of a fluid heat exchanger, heat sink is replaced by heat transferring, the junction temperature treating problem is solved thoroughly, and the integration degree of the integrated heat transferring chip is increased by 60% or above compared with the integration degree of a heat sink chip. Light reflection rasters are arranged between integrated heat transferring chips. A point light source is extended to be an area light source, and the working heat of nodes in particles forming an integrated wafer is subjected to phase changing, absorbed and circulated immediately by a working medium in the pipeline and is transferred out immediately. The LED lighting integrated heat transferring and exchanging device with heat being dissipated immediately achieves the level that power ranges from 150 W to 500 W, the luminous flux ranges from 16,000 lumen to 55,000 lumen and the junction temperature in the chip ranges from 94 DEG C to 100 DEG C at the high-temperature environment where the temperature is 40 DEG C. The reliability is greatly improved, the chip and a lamp holder are provided with lenses, the secondary optical effect is utilized, the light shape is good, the cost is low, and the LED lighting chip and the junction temperature heat treating device thereof can be widely applied to shop window spotlights, headlights, street lamps, square tower lamps and other high-luminance lighting.

Description

The integrated heat of LED illumination moves heat-exchanger rig

Art

The present invention relates to a kind of LED illumination chip and its junction temperature heat-treating apparatus, especially will be LED wafer particle integrated It is that the integrated heat without heat sink process moves chip, according to needed for highlight illumination, integrated level and power are welded on the pipe of fluid heat exchanger Lu Shang, integrated heat are moved, and are constituted in integrated wafer particle Node work calorieses are absorbed by the instant phase transformation of working medium in pipeline, unidirectionally move to immediately condenser, immediately the LED illumination collection of radiating Heat-exchanger rig is moved into heat.

Background technology

At present, the integrated technique of the illumination chip of LED is affected by universal semiconductor intergration model deeply, by LED wafer grain Sub- abbreviation grain aspect arrangement, die bond form die matrix, are positioned at the copper or aluminum that thickness is 1.0mm-3.0mm by eutectic weldering On the integrated face of substrate made by good conductor or electronic ceramics, the density of die matrix distribution represents power integrated level, and intercrystalline leads to Cross ultrasonic wire bonding and constitute circuit power, glue dispensing and packaging makes LED illumination integrated chip, and the another side of chip substrate is thermal conductive surface It is arranged on base plate of radiator by thermal grease conduction plane adhesion, the integrated chip is easy to Standard capacity metaplasia and produces and use, and which is brilliant The heat that the work of intragranular node is produced spreads heat flow density by conduction in substrate first, and junction temperature abbreviation junction temperature is deposited to To heat-transfer surface, this process is carried out whole substrate in a substrate, therefore substrate is referred to as heat sink substrate, then by heat transfer To the base plate of radiator, spread heat flow density again by conduction, heat is deposited to whole spreader surface by heat sink base plate Radiated, integral heat sinks chip is referred to as with operating characteristic with integrated chip pattern, be bonded on base plate of radiator and formed Equipment be referred to as integral heat sinks heat abstractor, abbreviation heat sink device, power that the device can actually reach, brightness, can By property, depending on the ability that the radiator secondary-conduction of connection is heat sink, in practice it has proved that, it is low that the device is only applicable to integrated level, work( Rate 5.0W-20.0W, room lighting of photoelectricity effect abbreviation light efficiency in 70 lumens/below W, and light efficiency is more than 100 lumens/W's Illumination, for example：The outdoor lightings such as show window shot-light, headlight, street lamp, square tower lamp, then need to reach certain integrated level and work( Rate, when integrated level is more than 4.0W/cm², power is more than 40.0W, and heat sink device then has drawback：The speed that node work calorieses are produced Spend for electric speed, and the speed of heat conduction is behaved appreciable second meter Su Du, both millions of times of differences, even if heat sink substrate Thickness is only 3.0mm, under good radiating condition, after node work calorieses conduct diffusion precipitin in a substrate, junction temperature and base 45 DEG C of plate heat-transfer surface temperature difference Δ T ＞, the thermal resistance of 15 DEG C/mm of average delta T ＞, the thermal resistance pressed close in the 1mm distances of node ΔT_t1-t018 DEG C/mm of ＞, for LED illumination is integrated, matrix integrated level is higher, and power is bigger, and luminous flux is higher, and efficiency is got over Height, material are more saved, and also bigger with regard to the work calorieses of the integrated middle node generation of corresponding matrix, for example：The LED heat of specified 200W Core sag piece, forms 20 by 1.0W200 LEDs crystal grain permutation and combination on the integrated face of 82.0mm × 62.0mm copper heat sink substrates The matrix of 10 row of row, matrix integrated level=200/8.2 × 6.2=3.9W/cm², nominal light flux up to 20,000 lumens, installed in rule On the base plate of lattice 210mm × 420mm aluminium radiators, current thermal conductivity highest integral heat sinks device is formed, in 40 DEG C of environment Lower test, there is provided 100W-120W power can be in reliably working state, the only up to 50-60% of rated power, actual integrated level Less than 2.4W/cm², luminous flux is only that 10,000 residual currents are bright, as current high-end level, but with Same Efficieney up to 20,000 lumens sodium vapor lamp Compare, its luminous flux not yet reaches the requirement of standard of illumination, if being applied to specified 200W power by force, even if in 25 DEG C of environment Under, in the short time, luminous flux can reach 20,000 lumens, but after half an hour, heat sink chip thermal conductive surface temperature just reaches more than 75 DEG C, In crystal grain, junction temperature is just in more than 125 DEG C, that is, be close to node attenuation points, if reaching 30,000 actually required lumen levels, only will The combination of 1.0W300 LEDs chip array forms the matrix of the row of 20 row 15 on the integrated face of the copper substrates of 82.0mm × 62.0mm, Rated power 300W is formed, matrix integrated level is 5.9W/cm², light efficiency be 100 lumens/W side can, but, the LED of this specification Illumination integral heat sinks chip is arranged on the radiator with huge area of dissipation of most good conductor manufacture, even if in 25 DEG C of room temperature Under environment, as solid material conduction velocity is slow, after work half an hour, LED heat core sag plate base heat-transfer surface temperature can surpass More than 70 DEG C are crossed, if in 35 DEG C of environment above, more than ten minutes will be more than 85 DEG C, now, and crystal grain interior knot temperature reaches 130 DEG C, preferably LED grain node resistance to extreme temperature is 150 DEG C at present, and commercialization level is 125 DEG C or so, faces directly burning at any time The consequence ruined, when this first LED illumination chip interior knot lights to highest effect, only less than 20% is converted into light in electric energy Can, and more than 80% electric energy is converted into the powerful heat of high heat flux with electric speed and quickly cannot conduct, and is formed The result of thermal resistance, its two be heat sink substrate raising of the temperature with ambient temperature, be not the ratio temperature rise in 1: 1, but exceed 1.5-3 times of environment temperature rise, in hypergeometric temperature rise, over 20 years, does not break away from the constraint of thermal resistance and hypergeometric temperature rise, all the time if still adopting Integral heat sinks radiating mode is used, matrix integrated level is only reduced, could be reduced thermal resistance, but bring therewith is reduction light of having to Effect, or a great power LED crystal grain is integrated in the heat sink pedestal of six millimeter of diameter, it is hot that glue dispensing and packaging constitutes 3W-6W Heavy lamp bead, meanwhile, base plate of radiator area is increased to 400mm × more than 600mm, on radiator, EDS maps fin has enough dissipating Heat energy power, also makes have enough spacing on base plate of radiator between lamp bead, by heat sink, disperses heat flow density, and it is so-called to be formed Big dot matrix, integrated level is only 1.2W/cm², light efficiency drops to 60 lumens/W, and lamp holder weight is partly led up to 20 kilograms extremely wasting Under conditions of body material and aluminium resource, though realize that the high-power reliably workings of 300W, cost are significantly carried under 40 DEG C of environment Height, and light efficiency is well below sodium vapor lamp, so far, has reflected on oneself in the industry substrate and base plate of radiator due to the drawbacks of heat sink generation, In substrate with pipeline is penetrated in base plate of radiator, improved by the fast characteristic of fluid working substance heat transfer rate in pipeline, so And test result is unsatisfactory, above-mentioned specified 200W heat sink chip reliability can be brought up to 150W, reason is that this improvement is ignored The heat transfer process of more than 2.0mm distances is still suffered from substrate and base plate, heat sink substrate and heat sink base plate is still fallen within, fail from It is all exist during conduction has thermal resistance and the lesson of hypergeometric temperature rise thoroughly come to oneself, to sum up, in existing integral heat sinks device " heat sink " is to cause LED illumination brightness not enough, the not strong main cause of reliability.

The content of the invention

The present invention overturns the existing manufacturing mode heat sink using conduction, based on to existing process basis reform, carries Go out manufacturing mode of the LED illumination integrated chip without heat sink process, and move integrated heat is referred to as without heat sink LED illumination integrated chip Chip, and being directly welded on the fluid heat exchanger pipeline for matching, it is so-called without it is heat sink be exactly the LED grain interior knot on substrate The work calorieses of generation are not to lead solid conduction diffusion and carry out infall process by good first, but work calorieses vertically pass through base Plate and tube wall make fluid working substance undergo phase transition circulation, potential when being gaseous state by liquid phase-change using working medium, then by heat active Property absorb, and continuously with liquid refrigerant boiling speed be transferred out of nodal regions, be directionally moved to immediately condenser, i.e., When be dispersed in air, during decalescence substrate do not occur heat diffusion with sedimentation process, Jing test, fluid working substance phase Become the fast hundreds times of the heat sink speed of the most good heat-conductive solid of speed ratio of circle transmission heat, can farthest reduce heat sink causing Thermal resistance difference, and change less property is improved with ambient temperature using fluid working substance boiling point, can steadily live the upper of junction temperature Lifting speed, contains hypergeometric temperature rise, is allowed to possess the ability for adapting to hot environment, and realization still has enough leeway in 40 DEG C of environment Reliably working, thoroughly solves the problems, such as chip brightness and reliability, can be rated as and moves past the heat sink process of journey replacement by heat, increases substantially Integrated level, makes point source be extended to area source, while increasing the structure of secondary optics effect, starts out the integrated heat of LED illumination and moves Chip heat integrated with the New Manufacturing Mode LED illumination of fluid heat exchanger assembly moves heat-exchanger rig, while meeting standardization The technological requirement of large-scale production, cost possess competitiveness, reach extensively using forth generation cold light source high-brightness LED illumination dress The purpose put.

The technical solution adopted for the present invention to solve the technical problems is：It is a kind of to move core without the heat sink integrated heat of LED illumination Piece, is welded on the integrated heat of the LED illumination constituted on the pipeline of fluid heat exchanger and moves heat-exchanger rig, and its feature one is LED illumination core In piece, crystal grain is integrated on the substrate of metallization aluminium nitride or aluminium oxide, and the substrate thickness is 0.3mm or so, simultaneously for integrated Face, metallization form integrated circuit patterns, and another side is brazing surface, and metallization forms soldering grid pattern, in order to be suitable to and pipeline Welding, is flat board rectangle strip without heat sink substrate, and pipeline weld strikes out the plane of respective area, and crystal grain is using paster weldering Formula and upside-down mounting gold thread welding type are connect, by 0.3mm × 0.7mm to 3.4mm × 3.6mm, which is corresponding for the dimensions of every crystal grain Power by 0.5W/ to 6.0W/, integrated level is 10.0W/cm²-20.0W/cm², improve than highest integral heat sinks pattern More than 60%, make point source be extended to area source, after die bond, welded crystal particle welding on the integrated, by fluorescence by eutectic Glue encapsulates to form the integrated heat shifting chip of LED illumination, increases sealing chip lens on its light-emitting area, and two is that the integrated heat of LED illumination is moved Chip is rushed in fluid heat exchanger evaporation pipeline along the symmetrical soldering of brazing surface long side direction central axis by the soldering lattice that metallize On the centrage in pressing face, the wall thickness of pipeline cannot be greater than 1.0mm, according to space, brightness, plane of illumination demand, calculate Power factor needed for area source, according to S_{Heat moves light source area}=power factor × power/chip integration, calculates fluid heat exchanger evaporation Area needed for pipe and its distribution, i.e., the hot area value for moving light source, and the thus interior diameter for determining pipeline of area, what pipeline was arranged Quantity, the spacing between pipeline, that is, determine strip it is integrated heat move chip while while between spacing and pattern, rectangular patterns Spacing between 3.0mm to 6.0mm, scallop spacing between 2.0mm to 9.0mm, in the spacing and heat move light source Integrated heat, across reflective grid, is moved chip by ultrasonic wire bonding and constitutes string simultaneously by the reflective grid of area periphery 60 ° of -90 ° of cambered surfaces of installation Connection circuit and general power, general power are matched with required working medium upper dosage limit, and working medium dosage lower limit is matched with heat exchanger heat exchange area, And by the heat of weldering moves light source area and reflective grid lamp holder lens shroud sealing admittedly, secondary optics effect is played, thus structure Absorbed by the instant phase transformation of working medium in pipeline into the node work calorieses that integrated heat is moved in chip, unidirectionally move to immediately condenser, i.e., When the integrated heat of the LED illumination that radiates move heat-exchanger rig.

The invention has the beneficial effects as follows：The drawbacks of overcoming existing LED illumination heat sink, is pipetted for heat sink by heat, first The thermal resistance in LED illumination chip can be greatly lowered, test proves that junction temperature area is poor through the liquid temperature area in welding tube wall therewith Value Δ T_{Maximum thermal resistance}=t_{Junction temperature}-t_{Liquid temperature}12 DEG C of ＜, and with the raising of ambient temperature, circulation rate also can be improved therewith, the containment of working medium boiling point Hypergeometric temperature rise, forms benign cycle, in 40 DEG C of environment, without any active auxiliary heat dissipation, lamp holder gross weight only 2 to 7 Under conditions of kilogram, output power 150W--500W, light efficiency are 110 lumens/W, when sending 1.6 ten thousand -5.5 ten thousand lumen luminous flux, 82 DEG C -88 DEG C of junction temperature area Temperature of Working is surveyed out, virtual junction temperature is calculated less than 94 DEG C -100 DEG C, is still had Δ T_Reliability=t_{Commercial junction temperature}- t_{Virtual junction temperature}The reliably working temperature difference of 31 DEG C -25 DEG C of ＞, is prevented effectively from light decay, reaches more than 8 years physical life, while starting LED photographs Bright chip increases the structure of secondary optics effect, and light shape is good, makes integrated heat move heat-exchanger rig and is widely used in show window shot-light, car In the highlight illuminations such as headlight, street lamp, square tower lamp, the effect of energy-conservation is really achieved.

Description of the drawings

The present invention is further described with reference to the accompanying drawings and examples：

Fig. 1 is that the integrated heat of one adopting surface mounted LED of embodiment of the present invention illumination moves chip.

Fig. 2 is that the integrated heat of LED illumination of the present invention moves chip solder side embodiment.

Fig. 3 is that the integrated heat of two flip-over type LED illumination of the embodiment of the present invention moves chip.

Fig. 4 is that the integrated heat of three LED illumination of the embodiment of the present invention moves heat-exchanger rig.

In figure：1. 2. substrate of crystal grain, 3. integrated circuit, 4. soldering lattice, 5. gap, 6. fluorescent glue, 7. chip lens 8. 11. punching press plane of wire bonding 9. fluid heat exchanger, 10. pipeline, 12. 13. reflective grid of spacing, 14. lamp holder lens, 15. working medium

Fig. 1 is that first embodiment of the invention stripping is illustrated, and adopting surface mounted LED illumination crystal grain 1 is integrated in metallization aluminium nitride On substrate 2, the substrate thickness is 0.3mm or so, is simultaneously integrated face, and metallization forms 3 pattern of integrated circuit, and another side is weldering Junction, formed soldering grid pattern, in order to be suitable to and pipeline welding, without heat sink substrate be flat board rectangle strip, a length of 20.0mm To 72.0mm, a width of 3.0mm to 6.0mm, crystal grain adopt paster welding type, and the dimensions of every crystal grain is by 0.3mm × 0.7mm To 1.0mm × 2.1mm, by 0.5W/ to 2.0W/, power integrated level is 10.0W/cm to its corresponding power²-20.0W/ cm², after die bond, being welded crystal particle welding on the integrated by eutectic, integrated circuit is covered by liquid fluorescent glue 6, according to aobvious Colour index determines point bondline thickness, and colour temperature needed for being formed after hot setting exposes circuit both positive and negative polarity, and transparent semicircular arc chip is saturating Mirror 7 is covered in substrate surrounding, increases light efficiency, and thus encapsulation forms the integrated heat of adopting surface mounted LED illumination and moves chip.

Fig. 2 is that the integrated heat of LED illumination of the present invention moves chip solder side embodiment, as the integrated heat of barcode LED moves chip base 2 size of plate：A length of 20.0mm to 72.0mm, a width of 3.0mm to 6.0mm, form sphere of movements for the elephants metallization on itself and pipeline solder side 4 pattern of soldering lattice, 5 non-metal part of sphere of movements for the elephants gap are, at aerofluxuss and flash, to reduce during solder solidification when cored solder is melted Internal stress.

Fig. 3 is that second embodiment of the invention stripping is illustrated, and flip-over type LED illumination crystal grain 1 is integrated in metallization aluminium oxide On substrate 2, the substrate thickness is 0.3mm or so, is simultaneously integrated face, and metallization forms 3 pattern of integrated circuit, and another side is weldering Junction, forms soldering grid pattern, and in order to be suitable to weld with pipeline, substrate is flat board rectangle strip, and a length of 20.0mm is extremely 72.0mm, a width of 3.0mm to 6.0mm, crystal grain face outwardly i.e. face-down bonding on circuit using light-transparent substrate is luminous, every crystal grain Dimensions by 1.0mm × 2.1mm to 3.4mm × 3.6mm, its corresponding power by 2.0W/ -6.0W/, power collection Cheng Du is 10.0W/cm²-20.0W/cm², after die bond, welded crystal particle welding on the integrated, by ultrasonic wire bonding by eutectic 8 form series connection integrated circuit, are covered by liquid fluorescent glue 6 in grain surface, colour temperature needed for being formed after hot setting, according to colour developing Index determines point bondline thickness, exposes circuit both positive and negative polarity, and the transparent hemispherical that is connected chip lens 7 are covered each by every crystal grain simultaneously Substrate surrounding is sealed in, increases light efficiency, thus encapsulation forms the integrated heat of flip-over type LED illumination and moves chip.

Fig. 4 is that signal is cutd open at the integrated heat shifting heat-exchanger rig core position of third embodiment of the invention LED illumination, respectively Plant the integrated heat shifting chip of seriation LED illumination to steam in fluid heat exchanger 9 along the symmetrical soldering of brazing surface long side direction central axis Send out on the centrage of pipeline 10 punching press plane 11, the wall thickness of pipeline cannot be greater than 1.0mm, according to space, brightness, plane of illumination Demand, COMPREHENSIVE CALCULATING are appeared light source power factor, according to S_{Heat moves light source area}=power factor × power/chip integration formula, calculates Area needed for fluid heat exchanger evaporation tube and its distribution, i.e., the hot area value for moving light source, and pipeline is thus determined in area Diameter, pipeline arrangement quantity, the spacing between pipeline, that is, determine strip it is integrated heat move chip while while between spacing 12 And pattern, rectangular patterns spacing between 3.0mm to 6.0mm, scallop spacing between 2.0mm to 9.0mm, at this Away from the reflective grid 13 of upper and hot shifting light source area periphery 60 ° of -90 ° of cambered surfaces of installation, across reflective grid, will by ultrasonic wire bonding 8 Integrated heat is moved chip and forms series-parallel circuit and general power, and general power is matched with required working medium upper dosage limit, working medium dosage lower limit Match with heat exchanger heat exchange area, and by the heat of weldering moves light source area and reflective grid lamp holder lens 14 shroud sealing admittedly, By secondary optical design, increase light efficiency, without hot spot, and cause illumination range, luminosity curve to meet the demand of highlight illumination, When heat moves chip energization work, the work calorieses that its interior knot is produced evaporate working medium 15 in pipeline, undergo phase transition, by fluid Design of heat exchanger direction circulation after, using working medium by liquid phase-change be gaseous state when potential, then by heat initiative absorb, and Nodal regions are transferred out of with liquid refrigerant boiling speed continuously, condenser are directionally moved to immediately, are dispersed into immediately In air, during this decalescence, it is horizontal that on the substrate speed vertically absorbed by heat is far longer than metallization circuit To the speed of conduction, chip interior knot heat almost all vertically passes through chip substrate and tube wall, has little time heat diffusion Property sedimentation process, instead of by heat shifting heat sink, constitute and move heat-exchanger rig without the integrated heat of heat sink LED illumination.

Claims

1. it is a kind of to move chip without the heat sink integrated heat of LED illumination, it is welded on the LED illumination collection constituted on the pipeline of fluid heat exchanger Heat-exchanger rig is moved into heat, its feature one is that crystal grain is integrated on the substrate of metallization aluminium nitride or aluminium oxide in LED illumination chip, The substrate thickness is 0.3mm or so, is simultaneously integrated face, and metallization forms integrated circuit patterns, and another side is brazing surface, metal Change form soldering grid pattern, in order to be suitable to and pipeline welding, without heat sink substrate be flat board rectangle strip, pipeline weld punching press Into the plane of respective area, using paster welding type and upside-down mounting gold thread welding type, the dimensions of every crystal grain is by 0.3mm for crystal grain × 0.7mm to 3.4mm × 3.6mm, by 0.5W/ to 6.0W/, power integrated level is 10.0W/cm to its corresponding power²- 20.0W/cm², more than 60% is improved than highest integral heat sinks pattern, make point source be extended to area source, after die bond, by eutectic Crystal particle welding on the integrated, is encapsulated by fluorescent glue and forms the integrated heat shifting chip of LED illumination, increased on its light-emitting area by weldering Sealing chip lens, two is that the integrated heat of LED illumination moves chip by the soldering lattice that metallize, along brazing surface long side direction central axis On the centrage that fluid heat exchanger evaporates pipeline punching press plane, the wall thickness of pipeline cannot be greater than 1.0mm for symmetrical soldering, according to Space, brightness, the demand of plane of illumination, the power factor that COMPREHENSIVE CALCULATING goes out needed for area source, according to S_{Heat moves light source area}=power factor × work( Rate/chip integration, the area needed for calculating fluid heat exchanger evaporation tube and its being distributed, i.e., the hot area value for moving light source, and by The diameter of pipeline is determined in this area, the quantity of pipeline arrangement, the spacing between pipeline determine that the integrated heat of strip moves chip While while between spacing and pattern, rectangular patterns spacing between 3.0mm to 6.0mm, scallop spacing in 2.0mm extremely Between 9.0mm, in the spacing and heat is moved light source periphery and installs the reflective grid of 60 ° of -90 ° of cambered surfaces, across reflective grid, by ultrasound Integrated heat is moved chip and constitutes series-parallel circuit and general power by swash weldering, and general power is matched with required working medium upper dosage limit, working medium Dosage lower limit is matched with heat exchanger heat exchange area, and by the heat of weldering moves light source area and reflective grid lamp holder lens shroud admittedly Sealing, plays secondary optics effect, thus constitutes the node work calorieses in integrated heat shifting chip by working medium in pipeline i.e. phase Become and absorb, unidirectionally move to immediately condenser, the integrated heat of the LED illumination of radiating moves heat-exchanger rig immediately.

2. the integrated hot moving device of LED illumination according to claim 1, is characterized in that：Adopting surface mounted LED illumination crystal grain (1) collection Into on the substrate (2) in metallization aluminium nitride, the substrate thickness is 0.3mm or so, is simultaneously integrated face, and metallization forms integrated Circuit (3) pattern, another side is solder side, forms soldering grid pattern, in order to be suitable to weld with pipeline, is flat board without heat sink substrate Rectangle strip, a length of 20.0mm to 72.0mm, a width of 3.0mm to 6.0mm, crystal grain adopt paster welding type, every crystal grain Dimensions by 0.3mm × 0.7mm to 1.0mm × 2.1mm, its corresponding power by 0.5W/ to 2.0W/, power collection Cheng Du is 10.0W/cm²-20.0W/cm², after die bond, being welded crystal particle welding on the integrated by eutectic, integrated circuit is by liquid State fluorescent glue (6) is covered, and determines point bondline thickness according to color rendering index, and colour temperature needed for being formed after hot setting is just exposing circuit Negative pole, transparent semicircular arc chip lens (7) are covered in substrate surrounding, increase light efficiency, and thus encapsulation forms adopting surface mounted LED illumination Integrated heat moves chip.

3. the integrated hot moving device of LED illumination according to claim 1, is characterized in that：The integrated heat of barcode LED moves chip substrate (2) size：A length of 20.0mm to 72.0mm, a width of 3.0mm to 6.0mm, form sphere of movements for the elephants metallization on itself and pipeline solder side Soldering lattice (4) pattern, sphere of movements for the elephants gap (5) non-metal part are at aerofluxuss and flash when cored solder is melted.

4. the integrated hot moving device of LED illumination according to claim 1, is characterized in that：Flip-over type LED illumination crystal grain (1) collects Into on the substrate (2) in metallization aluminium oxide, the substrate thickness is 0.3mm or so, is simultaneously integrated face, and metallization forms integrated Circuit (3) pattern, another side is solder side, forms soldering grid pattern, and in order to be suitable to weld with pipeline, substrate is flat board rectangle Strip, a length of 20.0mm to 72.0mm, a width of 3.0mm to 6.0mm, crystal grain face outwardly i.e. face-down bonding using transparent substrates are luminous On circuit, by 1.0mm × 2.1mm to 3.4mm × 3.6mm, its corresponding power is by 2.0W/ for the dimensions of every crystal grain To 6.0W/, power integrated level is 10.0W/cm²-20.0W/cm², after die bond, welded crystal particle welding integrated by eutectic On circuit, series connection integrated circuit is formed by ultrasonic wire bonding (8), is covered by liquid fluorescent glue (6) in grain surface, hot setting Colour temperature needed for being formed afterwards, determines point bondline thickness according to color rendering index, exposes circuit both positive and negative polarity, the transparent hemispherical that is connected chip is saturating Mirror (7) is covered each by every crystal grain and is sealed in substrate surrounding, increases light efficiency, and thus encapsulation forms flip-over type LED illumination collection Chip is moved into heat.

5. the integrated hot moving device of LED illumination according to claim 1, is characterized in that：Various series LEDs illuminate integrated heat Move chip and evaporate pipeline (10) punching press plane in fluid heat exchanger (9) along the symmetrical soldering of brazing surface long side direction central axis (11), on centrage, the wall thickness of pipeline cannot be greater than 1.0mm, according to space, brightness, plane of illumination demand, COMPREHENSIVE CALCULATING Appear light source power factor, according to S_{Heat moves light source area}=power factor × power/chip integration formula, calculates fluid heat exchanger steaming Area needed for sending out pipe and its being distributed, i.e., the hot area value for moving light source, and the diameter of pipeline, pipeline arrangement are determined in this area Quantity, the spacing between pipeline, that is, determine strip it is integrated heat move chip while while between spacing (12) and pattern, square , between 3.0mm to 6.0mm, scallop spacing is between 2.0mm to 9.0mm, in the spacing and hot for shape pattern-pitch Move light source area periphery and the reflective grid (13) of 60 ° of -90 ° of cambered surfaces are installed, across reflective grid, by ultrasonic wire bonding (8) by integrated heat Move chip and form series-parallel circuit and general power, general power match with required working medium upper dosage limit, working medium dosage lower limit with exchange heat Device heat exchange area is matched, and by the heat of weldering moves light source area and reflective grid lamp holder lens (14) shroud sealing admittedly, is passed through Secondary optical design, increases light efficiency, without hot spot, and causes illumination range, luminosity curve to meet the demand of highlight illumination, works as heat When moving chip energization work, the work calorieses that its interior knot is produced evaporate working medium in pipeline (15), undergo phase transition, change by fluid After the direction circulation of hot device design, potential when being gaseous state by liquid phase-change using working medium, then heat initiative is absorbed, and source Source is constantly transferred out of nodal regions with liquid refrigerant boiling speed, is directionally moved to immediately condenser, is dispersed into immediately sky In gas, during this decalescence, it is horizontal that the speed vertically absorbed by the heat on substrate is far longer than metallization circuit To the speed of conduction, chip interior knot heat almost all vertically passes through chip substrate and tube wall, has little time heat diffusion Property sedimentation process, instead of by heat shifting heat sink, constitute and move heat-exchanger rig without the integrated heat of heat sink LED illumination.