CN106521619B - It is a kind of with the topological insulator laminated film of high spin-polarization electron channel and its preparation - Google Patents
It is a kind of with the topological insulator laminated film of high spin-polarization electron channel and its preparation Download PDFInfo
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Abstract
The invention discloses a kind of topological insulator Heterogeneous Composite films with high spin-polarization electron transport channel, by 6H-SiC (0001) or SrTiO3Substrate, and the topological insulator 6QL Bi successively grown in ultra-high vacuum system in substrate above with molecular beam epitaxy technique2Se3With general semiconductor 3QL Sb2S3Composition.By in topological insulator Bi2Se3Surface covers Sb2S3, make the electric property of laminated film compared to simple Bi2Se3The performance of film, which has, to be obviously improved；Dirac point by becoming lower than top of valence band 0.1eV higher than top of valence band 0.09eV, Fermi velocity byIt has been promoted, spin polarizability is also by 0.65 raising to 0.91；Meanwhile spin-polarized electron transport channel width is improved by 1nm or so to 3nm, and can be as desired by increase Sb2S3The thickness of coating is further widened；Sb2S3Coating can also reduce surface contamination, such as oxidation, the influence to spinning polarized electron stream transfer passages.
Description
Technical field
The invention belongs to Condensed Matter Physics fields, are related to a kind of topological insulator laminated film for spin electric device
And its preparation.
Background technique
The spin electric device to be worked using the spin properties of electronics is relative to the micro- electricity of tradition for relying on charge characteristic work
Sub- device has the advantages that running speed is high, low energy consumption.Topological insulator (the Topological of discovery in 2006
insulator)(Bernevig B.A.et al.,Quantum spin Hall effect and topological phase
Transition in HgTe quantum wells.Science 2006,314:1757-1761.) it is production spinning electron device
The ideal material of part.This kind of material has the polarized topological surface state of altitude spin protected by Topological Symmetry, this surface
State can be used as the transfer passages of spinning polarized electron stream, thus can be used to realize the function (Pesin of spin electric device
D.et al.,Spintronics and pseudospintronics in graphene and topological
insulators.Nat.Mater.2012,11:409-416.)。Bi2Se3Serial topological insulator is opening up for current most study
Flutter insulating material.Its film usually utilize molecular beam epitaxy technique in ultravacuum system by electron beam heating evaporation Bi,
The raw materials such as Se are in 6H-SiC (0001), SrTiO3It is prepared on equal substrates.(Chen Y.L.et al.Experimental
realization of a three-dimensional topological insulator,Bi2Te3.Science 2009,
325:178-181.) however, single topological insulator film surface spinning polarized electron channel has the disadvantage that (1) mesh
Preceding common second generation topological insulator, such as Bi2Se3、Bi2Te3Deng, although surface energy band structure is simple, its dirac point
Under top of valence band.Such as Bi2Se3Dirac point below top of valence band at 0.1eV, cause operating point that Di's drawing cannot be set
Near gram point, otherwise non-spin polarization conductive channel can be also turned in vivo, therefore the spin polarizability for transmitting electronics can drop
It is low, so as to cause resistance and thermal losses.Furthermore near dirac point, energy dispersion is simultaneously nonideal linear, this can reduce load
Flow sub- Fermi velocity.It (2), again can be due to waiting energy if using the electronic state far from dirac point as spin current transfer passages
The distortion in face leads to backscattering and influences device performance.(Alpichshev Z.et al.,STM imaging of
electronic waves on the surface of Bi2Te3:Topologically protected surface
states and hexagonal warping effects.Phys.Rev.Lett.2010,104:16401-16404.)(3)
Pure topological insulator film, since its spin current transfer passages is confined to outermost 1QL, (quintuple layer, five is former
Sublayer) in the range of, therefore the micropollution on surface will cause significant impact to spin current transfer passages, to make device
Electric property is degenerated.(Kong D.et al.,Rapid surface oxidation as a source of surface
degradation factor for Bi2Se3.ACS Nano 2011,5:4698-4703.) (4) due to single topological insulator
The spin circulation road on surface is confined to very narrow superficial layer, and charge transport ability is also very limited.
Summary of the invention
Topological insulator Heterogeneous Composite membrane structure proposed by the present invention efficiently solves single topology listed earlier
Many drawbacks existing for insulator film can effectively promote the working performance of device.
The principle of the present invention is: topological insulator Heterogeneous Composite film proposed by the present invention with 6H-SiC (0001) or
SrTiO3For substrate, 6QL Bi is successively grown on substrate in ultra-high vacuum system using molecular beam epitaxy technique2Se3And 3QL
Sb2S3And laminated film is made.Due to Sb2S3For topological mediocre insulator, Bi2Se3And Sb2S3Interface certainly exist and open up
Flutter the interfacial state of non-mediocrity.At the same time, Bi2Se3And Sb2S3Conduction band, the dislocation between valence band it is smaller, the confinement to electronics
Act on it is weak, so the polarized Bi of altitude spin2Se3Topological state can extend to entire Sb2S3Coating makes Sb2S3As ideal
Spinning polarized electron stream transfer passages, so that the film of this structure can be applied in spin electric device.
The technical scheme is that
A kind of topological insulator laminated film with high spin-polarization electron stream transfer passages, the laminated film by according to
6H-SiC (0001) substrate, the Bi of secondary connection2Se3Film and Sb2S3Film composition, Bi2Se3Film and Sb2S3The thickness of film point
It Wei not 6QL and 3QL.
The preparation method of laminated film of the present invention, includes the following steps:
(1) high-purity Bi, Se, Sb, S raw material is loaded onto respectively in the electron gun furnace of molecular beam epitaxy system, by 6H-SiC
(0001) substrate is fixed on specimen holder；
(2) system is evacuated to ultrahigh vacuum, and degassing processing is carried out to 6H-SiC substrate and raw material；
(3) direct current is passed to 6H-SiC substrate, is heated to 1300 DEG C, evaporates surface silicon atoms, thus at it
Surface forms graphene film to carry out Bi2Se3Epitaxial growth；
(4) keep 6H-SiC substrate at 220 DEG C, the Bi that first deposition thickness is 6QL on it2Se3Film, Bi2Se3Film
The temperature of Bi, Se evaporation source is respectively 550 DEG C and 230 DEG C in deposition process；6H-SiC substrate temperature is down to 100 DEG C again, then
In Bi2Se3The Sb of epitaxial growth 3QL on film2S3Film, Sb2S3In film deposition process, the temperature of Sb, S evaporation source is respectively
500 DEG C and 150 DEG C.
In step (2), the ultrahigh vacuum is (2-3) × 10-10Torr。
Compared with prior art, the invention has the benefit that (1) can be adjusted dirac point position from lower than top of valence band
To band gap, in Bi2Se3Dirac point can be adjusted to from lower than top of valence band 0.1eV higher than top of valence band 0.09eV in system,
Central area in forbidden band, so as to inhibit non-spinning polarized electron to participate in heat dissipation caused by conduction.(2) it can mention
The dispersion linearity of energy, pure Bi near high dirac point2Se3The Fermi velocity of valence band is near film dirac pointAnd surface cladding thickness is the Sb of 3QL2S3Fermi velocity is promoted to later Improve 40%.(3)
Electron-spin polarization rate has also been promoted to 0.91 from 0.65, improves 40%.It (4) can be by spinning polarized electron stream transfer passages
Width increases to 3QL from original 1QL, to improve spin current transport capability.(5) due to Sb2S3Presence, can effectively subtract
Influence of the factors such as small surface contamination to spin-polarized electron transport channel transport capability, thus improve device stability and can
By degree.
Detailed description of the invention
Fig. 1 is 3QL Sb2S3The 6QL Bi of covering2Se3Complex thin film structure schematic diagram.
Fig. 2 is 3QL Sb2S3The 6QL Bi of covering2Se3Laminated film energy band diagram.
Fig. 3 is 3QL Sb2S3Cover 6QL Bi2Se3The spinning resolving charge density figure of valence band near Dirac point.
Fig. 4 is 3QL Sb2S3The 3QL Bi of covering2Se3Laminated film energy band diagram.
Fig. 5 is 9QL Bi2Se3The energy band diagram (a) and spinning resolving charge density figure (b) of film.
Fig. 6 is 3QL As2S3Cover 6QL Bi2Se3The spinning resolving charge density figure of film.
Specific embodiment
Below in conjunction with the accompanying drawings and the specific embodiments to Compound Topology insulation film structure provided by the invention and its advantage
It is described in further detail.
Of the invention provides a kind of topological insulator complex thin film structure, as shown in Figure 1 comprising by 6H-SiC
(0001) or SrTiO3The substrate of composition is used to support the topological insulator laminated film of growth on it, on substrate successively
The 6QL Bi of epitaxial growth2Se3Topological insulator film and 3QL Sb2S3General semiconductor film.The selection of substrate material is not
It is very harsh, with can epitaxial growth Bi on it2Se3Subject to film.Bi2Se3Serial topological insulator, including Bi2Se3、
Bi2Te3、Sb2Te3, basic in this way by five atomic layers one by one (quintuple layer, QL) all with the structure of stratiform
Unit is accumulated.In each five atomic layer, by 2 metallic atoms, such as Bi or Sb and 3 chalcogen, such as Se, Te, according to
Secondary alternating is combined into.Outermost atom is chalcogen in each five layers.In five layers of layer metallic element Bi, Sb with
Chalcogen Se, Te are then combined by the weaker Van der Waals force of active force between adjacent five layers by chemical bonds.By
It in the lamellar character of this kind of material, is usually prepared in ultra-high vacuum system using molecular beam epitaxy technique, and can be with
Prepare the monocrystal thin films sample of high quality.
Topological insulator has apparent difference, the topological order of their physical efficiency bands relative to common semiconductor or insulator
Parameter is different, and thus derives a series of completely different electronic properties.The inside of topological insulator is insulation,
With limited forbidden bandwidth, this point is similar to common insulator or semiconductor.But on the surface of topological insulator
(interface of topological insulator and vacuum), since vacuum can be considered the very big common insulators of forbidden bandwidth, topology insulation
Mutation at the surface of body due to topological order parameter causes the forbidden band of internal limited size is inevitable to be closed at surface, so as to cause
There is the metallic state without energy gap on surface, as shown in Fig. 5 (b).As can be seen that the charge density of topological surface state is substantially distributed in
Among outermost 1QL.Meanwhile surface state spin up and spin downward charge density be it is unequal, this result in height
Electron-spin polarization, this point is very important spin electric device.One feature of spin electric device is exactly
The electronics of a certain spin orientation can selectively be transmitted.On the other hand, as shown in Fig. 5 (a), simple Bi2Se3Di of film
For clarke point under top of valence band, dispersion relation is also and nonideal linear, and these problems we can be by it
Surface deposits certain thickness general semiconductor and realizes.Since general semiconductor has different topological orders from topological insulator,
Can have topological state in their interface can be such that topological state extends to whole when we select suitable semiconductor material
The coating that a general semiconductor is constituted, forms ideal spinning electron channel.It will be in Bi2Se3Surface epitaxial semiconductor is thin
Then this semiconductor must be with Bi for film2Se3With similar structure, just not will lead in this way cannot since lattice adaptation is excessive
Form the epitaxial film of atomically flating；Secondly, also needing the atom of lesser Quantum geometrical phase coefficient namely constitution element
Ordinal number wants smaller, in this way, its energy band will not just invert, it can be just general semiconductor.By repeated screening, we are obtained
Optimal combination, i.e. Bi2Se3-Sb2S3Laminated film.The band structure of this compound system is shown in Fig. 2, the spin of topological state
It differentiates charge density distribution and is shown in Fig. 3.Obviously, this system have it is desirable that characteristic, dirac point is located among forbidden band,
Topological state is almost without being damply distributed in Sb2S3In layer, the dispersion nearby of dirac point has the very high linearity.
Lower mask body introduction extension on 6H-SiC (0001) substrate prepares 3QL Sb2S3/6QL Bi2Se3Laminated film
Step.
Embodiment 1
(1) it is former that high-purity Bi, Se, Sb, S are loaded onto respectively in the aluminum oxide crucible of molecular beam epitaxy system electron gun furnace
Material, the purity of these raw materials are at least 99.999%；6H-SiC (0001) is cut into the strip substrate of 5mm × 10mm or so,
And be successively cleaned by ultrasonic using deionized water and alcohol, it is complete rear with being dried with nitrogen, it is fixed on sample carrier, and install together
In on the specimen holder of system；
(2) system is evacuated to ultrahigh vacuum, and degassing processing is carried out to 6H-SiC substrate and evaporation source.6H-SiC substrate
Outgassing temperature is 600 DEG C, and the outgassing temperature of evaporation source Bi, Se, Sb, S are respectively 600 DEG C, 280 DEG C, 550 DEG C and 200 DEG C, to remove
Go the gas molecule or oxide of their adsorptions to obtain clean evaporation source；
(3) DC current is passed to 6H-SiC substrate, its own is heated to 1300 DEG C simultaneously using the heat that resistance generates
It maintains 30 seconds, evaporates surface silicon atoms, to be formed on its surface the graphene film of high quality to carry out Bi2Se3It is outer
Prolong growth；
(4) keep 6H-SiC substrate at 220 DEG C, the Bi that first deposition thickness is 6QL on it2Se3Film, Bi2Se3Film
The temperature of Bi, Se evaporation source is respectively 550 DEG C and 230 DEG C in deposition process, then 6H-SiC substrate temperature is down to 100 DEG C, then
In Bi2Se3The Sb of epitaxial growth 3QL on film2S3Film, Sb2S3In film deposition process, the temperature of Sb, S evaporation source is respectively
500 DEG C and 150 DEG C.In the growth course of surface, quartz crystal oscillator calibrator shows that the growth rate of film is 0.3QL/min left
It is right.
Comparative example 1
Substrate is 3QL Bi2Se3, then epitaxial growth 3QL Sb on it2S3The laminated film of formation.
The topological insulator film topological state opposite there are spin orientation due to both side surface, when the thickness very little of film
When, such as Bi2Se3The critical thickness of film is 6QL, and due to quantum tunneling effect, upper and lower surface state can interact, and cause
Dirac point generates energy gap, while spin polarizability can also reduce accordingly.As with 3QL Sb2S3Cover 6QL Bi2Se3It is thin
The control of film we can prepare substrate be 3QL Bi2Se3Laminated film sample.Preparation process is similar to embodiment, uniquely not
Same is exactly in deposition Bi2Se3When need to shorten sedimentation time, its thickness can be accurately controlled by quartz crystal oscillator calibrator.It is imitative
As shown in figure 4, since thickness is too small, the interaction of upper and lower surface state causes to produce in dirac point the result really simulated
The energy gap of 0.006eV, spin polarizability also will be 0.90 by 0.91.Variation is not to protrude very much, mainly should be surface
Sb2S3The presence of coating makes the majority charge Density Distribution of topological state be transferred to Sb2S3In layer, therefore upper and lower surface state
Real space interval be greater than 3QL, so, interact caused by influence it is weaker.Thus we are it can also be seen that Bi2Se3's
Substrate cannot be too thin, has comprehensively considered its performance reasonable thickness compared with 6QL after the needs of device miniaturization is.When
So, much thicker can also be with, promotion only for performance and to no effect.
Comparative example 2
Substrate is 6QL Bi2Se3, then epitaxial growth 3QL Bi on it2Se3, it is equivalent to 9QL Bi2Se3Namely it is single
Bi2Se3Film.
In order to which display surface covers Sb2S3Film for improving performance importance, we provide two comparative examples, one
A is this example, i.e., in Bi2Se3On cover Bi again2Se3, substantially single Bi2Se3Film；With next comparative example.The sample of this example
Product preparation process is as embodiment, only difference is that Bi2Se3The thickness of film increases to 9QL by 6QL, this needs to increase
The sedimentation time of Bi, Se, exact thickness can pass through crystal oscillator calibrator real-time monitoring.By the 3QL on surface by Sb2S3It is changed to
Bi2Se3When, shown in energy band such as Fig. 5 (a), spinning resolving charge density is shown in Fig. 5 (b).It can be seen that single Bi2Se3Film
When dirac point be located under top of valence band, dirac point nearby energy band the dispersion linearity it is also bad, there is bending.
Comparative example 3
Substrate is 6QL Bi2Se3, then epitaxial growth 3QL As on it2S3The laminated film of formation.
Sb and S is replaced with Quantum geometrical phase effect stronger Bi and Se by we respectively in a upper comparative example,
We are then replaced with the As element lighter than Sb in this instance.After Sb is replaced with As, As2S3Band gap will compare Sb2S3More
Greatly.Bi2Se3Topological state and As2S3Conduction band, the dislocation between valence band become larger, so that the restriction effect to electronics increases so that
Electronics all concentrates on Bi2Se3-As2S3Interface, this point can most clearly find out from Fig. 6；Still further aspect, As2S3Than
The Bi of substrate2Se3Lattice constant it is much smaller, be unfavorable for carry out high quality epitaxial film growth.And Sb2S3With Bi2Se3Between
Lattice mismatch very little is conducive to carry out extension, so selecting Bi2Se3-Sb2S3Constituting laminated film is optimal combination.
In conjunction with above-described embodiment and comparative example, it is known that:
Work as Bi2Se3When substrate thickness reduces to 3QL by 6QL, since the interaction of upper and lower surface state can be produced in dirac point
The band gap of raw 0.006eV, while spin polarizability also slightly reduces, and becomes 0.90 from 0.91.
When surface coating material is as base material, i.e., in 6QL Bi2Se3Regrowth 3QL Bi in substrate2Se3, institute
Obtaining is 9QL Bi2Se3When, dirac point is located under top of valence band at 0.1eV, if fermi level is adjusted at dirac point, body
Energy band will also participate in conducting process, it will cause resistance and thermal losses.The Fermi velocity of valence band is near dirac point simultaneouslyElectron-spin polarization rate is 0.65, this is relative to covering 3QL Sb2S3When laminated film performance parameter be all deteriorated
?.
As 6QL Bi2Se3Surface covers 3QL As2S3When, dirac point is only above top of valence band 0.04eV；Charge density master
Concentrate on Bi2Se3/As2S3Interface, with the increase charge density exponential damping with a distance from interface, thus cannot be abundant
Utilize entire As2S3Coating carries out transporting for spinning polarized electron, it is difficult to the occasion applied to the transmission of big signal.Secondly As member
Element is unfavorable for practical application to human health.
Claims (3)
1. a kind of topological insulator laminated film with high spin-polarization electron stream transfer passages, which is characterized in that described multiple
Film is closed by sequentially connected 6H-SiC (0001) substrate, Bi2Se3Film and Sb2S3Film composition, in molecular beam epitaxy system
Electron gun furnace in load onto high-purity Bi, Se, Sb, S raw material respectively, 6H-SiC (0001) substrate is fixed on specimen holder；It is described
Film is made by the steps:
(1) high-purity Bi, Se, Sb, S raw material is loaded onto respectively in the electron gun furnace of molecular beam epitaxy system, by 6H-SiC (0001)
Substrate is fixed on specimen holder；
(2) system is evacuated to ultrahigh vacuum, and degassing processing is carried out to 6H-SiC substrate and raw material；
(3) direct current is passed to 6H-SiC substrate, is heated to 1300 DEG C, evaporates surface silicon atoms, thus on its surface
Graphene film is formed to carry out Bi2Se3Epitaxial growth；
(4) keep 6H-SiC substrate at 220 DEG C, the Bi that first deposition thickness is 6QL on it2Se3Film, Bi2Se3Film deposited
The temperature of Bi, Se evaporation source is respectively 550 DEG C and 230 DEG C in journey；6H-SiC substrate temperature is down to 100 DEG C again, then in Bi2Se3
On film epitaxial growth with a thickness of 3QL Sb2S3Film, Sb2S3In film deposition process, the temperature of Sb, S evaporation source is respectively
500 DEG C and 150 DEG C.
2. the preparation method of laminated film as described in claim 1, which comprises the steps of:
(1) high-purity Bi, Se, Sb, S raw material is loaded onto respectively in the electron gun furnace of molecular beam epitaxy system, by 6H-SiC (0001)
Substrate is fixed on specimen holder；
(2) system is evacuated to ultrahigh vacuum, and degassing processing is carried out to 6H-SiC substrate and raw material；
(3) direct current is passed to 6H-SiC substrate, is heated to 1300 DEG C, evaporates surface silicon atoms, thus on its surface
Graphene film is formed to carry out Bi2Se3Epitaxial growth；
(4) keep 6H-SiC substrate at 220 DEG C, the Bi that first deposition thickness is 6QL on it2Se3Film, Bi2Se3Film deposited
The temperature of Bi, Se evaporation source is respectively 550 DEG C and 230 DEG C in journey；6H-SiC substrate temperature is down to 100 DEG C again, then in Bi2Se3
The Sb of epitaxial growth 3QL on film2S3Film, Sb2S3In film deposition process, the temperature of Sb, S evaporation source be respectively 500 DEG C and
150℃。
3. the preparation method of laminated film as claimed in claim 2, which is characterized in that in step (2), the ultrahigh vacuum
For (2-3) × 10-10Torr。
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| CN108428789B (en) * | 2018-02-05 | 2020-05-22 | 清华大学 | Multichannel topological insulator structure, preparation method and electrical device |
| CN109444331B (en) * | 2018-09-30 | 2020-08-28 | 中国科学技术大学 | Ultrahigh vacuum heating device and heating method thereof |
| CN109411534B (en) * | 2018-10-29 | 2022-04-01 | 苏州大学 | Two-dimensional topological insulator and preparation method and application thereof |
| CN110224035B (en) * | 2019-05-23 | 2021-02-26 | 华中科技大学 | Heterojunction, preparation method and application thereof |
| CN110512282B (en) * | 2019-09-29 | 2021-01-01 | 中国人民解放军军事科学院国防科技创新研究院 | Implementation method of novel terahertz radiation source |
| CN112285822B (en) * | 2020-10-23 | 2022-06-17 | 常州工业职业技术学院 | Topological structure of two-dimensional photonic crystal under non-Hermite modulation |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000803A (en) * | 2012-12-21 | 2013-03-27 | 清华大学 | Electrical device |
| CN102995117A (en) * | 2012-12-21 | 2013-03-27 | 清华大学 | Preparation method of topological insulator structure |
| CN103022344A (en) * | 2012-12-21 | 2013-04-03 | 清华大学 | Topological insulator structure |
| CN103247862A (en) * | 2013-05-16 | 2013-08-14 | 大连理工大学 | Multilayer symmetric metamaterial based on phase-change material or topological insulating material |
| CN103526297A (en) * | 2013-10-17 | 2014-01-22 | 西南交通大学 | Method for preparing topological insulator Bi2Se3 film |
| CN104681707A (en) * | 2013-12-02 | 2015-06-03 | 新奥科技发展有限公司 | Thermoelectric Structures And Devices Based On Topological Insulators |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8629427B2 (en) * | 2011-04-29 | 2014-01-14 | Texas A&M University | Topological insulator-based field-effect transistor |
| JP6161147B2 (en) * | 2013-01-25 | 2017-07-12 | 国立研究開発法人物質・材料研究機構 | Electric field tunable topological insulator using perovskite structure |
-
2015
- 2015-09-10 CN CN201510573826.1A patent/CN106521619B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000803A (en) * | 2012-12-21 | 2013-03-27 | 清华大学 | Electrical device |
| CN102995117A (en) * | 2012-12-21 | 2013-03-27 | 清华大学 | Preparation method of topological insulator structure |
| CN103022344A (en) * | 2012-12-21 | 2013-04-03 | 清华大学 | Topological insulator structure |
| CN103247862A (en) * | 2013-05-16 | 2013-08-14 | 大连理工大学 | Multilayer symmetric metamaterial based on phase-change material or topological insulating material |
| CN103526297A (en) * | 2013-10-17 | 2014-01-22 | 西南交通大学 | Method for preparing topological insulator Bi2Se3 film |
| CN104681707A (en) * | 2013-12-02 | 2015-06-03 | 新奥科技发展有限公司 | Thermoelectric Structures And Devices Based On Topological Insulators |
Non-Patent Citations (3)
| Title |
|---|
| "First-Principles Study of Topological Insulators A2B3 (A=Bi and Sb, and B=O, S, Se and Te)";Takehiro Kato et al.;《Proc. Computational Science Workshop 2014》;20141231;第5卷;011022-1到011022-7页 |
| "Spiral Growth without Dislocations: Molecular Beam Epitaxy of the Topological Insulator Bi2Se3 on Epitaxial Graphene/SiC(0001)";Y. Liu et al.;《PHYSICAL REVIEW LETTERS》;20120314;第108卷;115501-1到115501-5 |
| Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface;Haijun Zhang et al.;《NATURE PHYSICS》;20090510;第5卷;438-442页 |
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