CN103526297B - One prepares topological insulator Bi 2se 3the method of film - Google Patents

One prepares topological insulator Bi 2se 3the method of film Download PDF

Info

Publication number
CN103526297B
CN103526297B CN201310487902.8A CN201310487902A CN103526297B CN 103526297 B CN103526297 B CN 103526297B CN 201310487902 A CN201310487902 A CN 201310487902A CN 103526297 B CN103526297 B CN 103526297B
Authority
CN
China
Prior art keywords
film
powder
topological insulator
purity
tube furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310487902.8A
Other languages
Chinese (zh)
Other versions
CN103526297A (en
Inventor
张敏
赵勇
吕莉
魏占涛
羊新胜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Southwest Jiaotong University
Original Assignee
Southwest Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southwest Jiaotong University filed Critical Southwest Jiaotong University
Priority to CN201310487902.8A priority Critical patent/CN103526297B/en
Publication of CN103526297A publication Critical patent/CN103526297A/en
Application granted granted Critical
Publication of CN103526297B publication Critical patent/CN103526297B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

One prepares topological insulator Bi 2se 3the method of film, the steps include: that a, high-purity bismuth meal (Bi) and high-purity selenium powder (Se) are by the mol ratio of 2:3.2, weigh in argon gas glove box, grinding, compressing tablet; Enclose again in vitreosil pipe, be placed in tube furnace carry out argon atmosphere under sintering, then quench, namely obtain Bi 2se 3monocrystalline bulk; B, the Bi that a is walked 2se 3monocrystalline bulk is reentered into grind into powder in argon gas glove box; C, powder obtained for b step is put into evaporation coating machine, powder is evenly evaporated on substrate, takes out after forming film; D, c walked gained film and again enclose air pressure and be less than 1 × 10 -2in the vitreosil pipe of Pa, be placed in tube furnace carry out argon atmosphere under after annealing process, then quench, namely on substrate, obtain Bi 2se 3film.The smooth densification of film prepared by the method, texture is good, has typical laminate structure.

Description

One prepares topological insulator Bi 2se 3the method of film
Technical field
The invention belongs to topological insulator material preparing technical field, especially belong to topological insulator Bi 2se 3the preparing technical field of film.
Background technology
Topological insulator is a kind of brand-new physical form found in recent years, has caused huge research boom.Topological insulator is the same with common insulators has energy gap, but topological property is different, under SO coupling effect, its surface or with the interface of common insulators on there will be without energy gap, Spin Splitting and there is the surface state of linear dispersion relation.The surface state of topological insulator is determined by the topological property of physical efficiency band; different from the surface state caused by surface dangling bonds or surface potential found in the past; and by the constant symmetric protection of time reversal, be not easy the impact being subject to the external environments such as defect, impurity, surface oxidation and pollution.Topological insulator also with study hotspot in recent years as the fields such as quantum hall effect, Quantum Spin Hall effect are closely connected, its essential characteristic is all utilize the topological property of electron energy band in material to realize the physical properties of various novelty.The such as interaction of topological insulator surface state and magneticsubstance; likely will cause the phenomenons such as quantization extraordinary Hall effect, topological magnetoelectric effect, mirror image magnetic monopole, the interface of topological insulator and superconducting material likely occurs that (Majorana) quantum state is drawn in Maastricht Treaty.Utilize the topological order in topological insulator material, superconduction sequence and ferromagnetic order, the mankind are expected to produce novel quantum device, and are finally applied to the field such as quantum calculation and spintronics.The three-dimensional topology insulating material of current most study is V 2vI 3family's material: Bi 2se 3, Bi 2te 3and Sb 2te 3.Because the advantage of this class material relatively large (the wherein Bi that is physical efficiency gap 2se 3energy gap is 0.3eV), simple surface energy band structure (single dirac cone Dirac), and easily prepare.
The thickness of three-dimensional topology insulating material is reduced to a certain degree, two-dimensional topology insulation can be transformed into.This means if by Bi 2se 3family's three-dimensional topology insulating material makes film, and accurately can control its thickness, just likely obtains two-dimensional topology insulating material.All basic change can be there is in it with, spin structure and topological property.Meanwhile, existing large quantity research proves the close relation between the electronics of the topological insulator of film morphology and spin structure and thickness, surface, interface.Therefore, regulate and control electronics and the spin structure of topological insulator by controlling these parameters, this to the investigation and application of topological insulator all tool have very important significance.In addition, present semi-conductor industry is based thin film technique mainly, grows and more easily combine with traditional semiconductor technology technique at suprabasil topological insulator film, be processed into device, drops into practical application.
In early days, people have started to prepare Bi by various method 2se 3, Bi 2te 3film is as galvanic deposit, chemical thought, metal-organic chemical vapor deposition equipment, the absorption reaction of continuous ionic layer, thermal evaporation, reactive evaporation, compound evaporation etc.But these are all more coarse polycrystal films for the film that thermoelectric applications is prepared, in order to the investigation and application of topological property, we need high-quality Bi 2se 3, Bi 2te 3single crystal material and thin-film material.
Molecular beam epitaxial growth technology (MBE) can obtain the uniform large area film of thickness.In recent years, Bi 2se 3, Bi 2te 3the MBE increment study of monocrystal thin films worldwide obtains extensive attention.Some groups have attempted growing Bi on different substrates 2se 3, Bi 2te 3the surface electronic state observational study of monocrystal thin films and original position.[the NaturePhys.2010 such as the Ma Xucun of its female grade of Tsing-Hua University Xue, Inst. of Physics, CAS, 6:584] and the Chang Gu Chuan Xiusi group [Phys.Rev.B.2010,81:165432] of Tokyo Univ Japan utilize MBE method to grow Bi on a si substrate respectively 2se 3film, the phenomenon utilizing angle resolved photoelectron spectroscope (ARPES) to observe surface state band gap to open with change in film thickness.Xue Qikun etc. are also at silicon carbide/graphene substrate and Al 2o 3substrate is prepared respectively the Bi of high-flatness 2se 3[Phys.Rev.Lett.2009,103:266803] and Bi 2te 3[Appl.Phys.Lett.2010,97:143118] film, and utilize the ARPES of original position and scanning tunnel microscope (STM) to observe surperficial morphogenetic standing wave, the surface state electronics Landau quantization etc. in high-intensity magnetic field, confirm the existence of Dirac type electronic state.The people such as A.Richardella obtain monocrystalline Bi in GaAs substrate 2se 3film ［ Appl.Phys.Lett.2010,97:262104 ］.The Wang Jian agriculture group of Hong Kong University of Science and Thchnology using ZnSe as buffer layer, extension Bi in GaAs substrate 2te 3film, have studied the impact ［ Phys.Rev.Lett.2011,106:166805 ］ of surface impurity on the Electric transport properties of film.But this kind of molecular beam epitaxial growth technology prepares Bi 2se 3the method of film, vacuum condition is 10 -8pa, apparatus expensive, energy expenditure are large, and cost is high.Therefore, the method for developing low-cost, with the excellent topological insulator material of processability, has important scientific meaning and construction value.
Summary of the invention
The object of this invention is to provide one and prepare topological insulator Bi 2se 3the method of film.The method can go out good Bi at substrate Epitaxial growth 2se 3film, and its cost of manufacture is low, simple to operate.
It is that one prepares topological insulator Bi that the present invention realizes the technical scheme that its goal of the invention adopts 2se 3the method of film, the steps include:
The preparation of a, monocrystalline bulk: high-purity bismuth meal (Bi) and high-purity selenium powder (Se), by the mol ratio of 2:3.2, weigh in argon gas glove box, grinding, compressing tablet; Enclose air pressure again and be less than 1 × 10 -2in the vitreosil pipe of Pa, be placed in tube furnace carry out argon atmosphere under sintering, then quench, namely obtain Bi 2se 3monocrystalline bulk;
Prepared by b, Precursor Powder: the Bi walked by a 2se 3monocrystalline bulk is reentered into grind into powder in argon gas glove box;
The evaporation of c, film: powder obtained for b step is put into evaporation coating machine, powder is evenly evaporated on substrate, take out after forming film;
D, after annealing process: c is walked gained film and again enclose air pressure and be less than 1 × 10 -2in the vitreosil pipe of Pa, be placed in tube furnace carry out argon atmosphere under after annealing process, then quench, namely on substrate, obtain Bi 2se 3film.
Compared with prior art, the invention has the beneficial effects as follows:
One, the powder ground to form with the monocrystalline be prepared into as front axle shell bismuth meal, the selenium powder plated film better than direct proportioning, the more smooth densification of the film obtained.
Two, in front axle shell raw material, bismuth meal (Bi) and selenium powder (Se) carry out proportioning by the mol ratio of 2:3.2, and selenium powder (Se) is suitably excessive, can be Bi 2se 3the growth of film provides the growing environment of rich Se, effectively can reduce Bi 2se 3the Se vacancy concentration of film, thus reduce electron adulterated concentration.
Three, the required vacuum tightness of preparation process is only 10 -3the Pa order of magnitude, is far smaller than 10 required by MBE -8pa, reduces greatly to the requirement of equipment, significantly decreases consumption and the preparation cost of energy.
The temperature and time sintered in the tube furnace of above-mentioned a step is: heats up 5 little of 850 DEG C, insulation 12 hours at 850 DEG C, then through 50 hours uniform decrease in temperature to 620 DEG C, then be incubated 5 hours.
Such sintering process is conducive to preparing excellent Bi 2se 3monocrystalline bulk.
In above-mentioned d step, the temperature and time of after annealing process is: rise to 300 DEG C-450 DEG C with 2 DEG C/min, then be incubated 2-5 hour.
Such after annealing process is conducive to Bi 2se 3the growth of film becomes phase with last.
The concrete operations of the quenching in above-mentioned a and c step are all pushed in cold water by vitreosil pipe.
Push energy fast cooling in cold water, the better Bi keeping being formed when sintering and after annealing process 2se 3phase.
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is the Bi of embodiment one 2se 3the X ray diffracting spectrum of film.
Fig. 2 is the Bi of embodiment one 2se 35000 times of scanning electronic microscope (SEM) photos of film.
Fig. 3 is the Bi of embodiment two 2se 3the X ray diffracting spectrum of film.
Fig. 4 is the Bi of embodiment two 2se 35000 times of scanning electronic microscope (SEM) photos of film.
Fig. 5 is the Bi of embodiment three 2se 3the X ray diffracting spectrum of film.
Fig. 6 is the Bi of embodiment three 2se 35000 times of scanning electronic microscope (SEM) cross-section photographs of film.
Fig. 1, the ordinate zou of 3,5 is diffracted intensity (Intensity), arbitrary unit (a.u.); X-coordinate is diffraction angle 2 θ, and unit is degree (deg).
Embodiment
Embodiment one
One prepares topological insulator Bi 2se 3the method of film, the steps include:
The preparation of a, monocrystalline bulk: purity be 99.999% bismuth meal (Bi) and purity be the selenium powder (Se) of 99.999% by the mol ratio of 2:3.2, weigh in argon gas glove box, grinding, compressing tablet; Enclose air pressure again and be less than 1 × 10 -2in the vitreosil pipe of Pa, be placed in tube furnace carry out argon atmosphere under sintering, then vitreosil pipe is pushed cold quenching-in water, namely obtains Bi 2se 3monocrystalline bulk;
The temperature and time sintered in tube furnace is: heat up 5 little of 850 DEG C, at 850 DEG C, be incubated 12 hours, then through 50 hours uniform decrease in temperature to 620 DEG C, then be incubated 5 hours;
Prepared by b, Precursor Powder: the Bi walked by a 2se 3monocrystalline bulk is reentered into grind into powder in argon gas glove box;
The evaporation of c, film: powder obtained for b step is put into evaporation coating machine, powder is evenly evaporated on Si (100) monocrystal chip, take out after forming film;
D, after annealing process: c is walked gained film and again enclose air pressure and be less than 1 × 10 -2in the vitreosil pipe of Pa, be placed in tube furnace carry out argon atmosphere under after annealing process, then vitreosil pipe is pushed cold quenching-in water, namely on substrate, obtains Bi 2se 3film.
The temperature and time of after annealing process is: rise to 300 DEG C with 2 DEG C/min, then is incubated 2 hours.
Fig. 1 is the Bi of the embodiment of the present invention one 2se 3the X ray diffracting spectrum of film.As can be seen from the figure all characteristic peaks are (00L) diffraction peak, and without other assorted peaks, show at Si(100) Bi that single crystal substrates grows 2se 3there is very strong C axle orientation.
Fig. 2 is the Bi of the embodiment of the present invention one 2se 350000 times of scanning electronic microscope (SEM) photos of film.As known in the figure: film sample surfacing, densification, without hole.It can thus be appreciated that this embodiment one has prepared texture well, there is typical layered structure, the Bi that surface compact is smooth 2se 3film.
Embodiment two
One prepares topological insulator Bi 2se 3the method of film, the steps include:
The preparation of a, monocrystalline bulk: purity be 99.999% bismuth meal (Bi) and purity be the selenium powder (Se) of 99.999% by the mol ratio of 2:3.2, weigh in argon gas glove box, grinding, compressing tablet; Enclose air pressure again and be less than 1 × 10 -2in the vitreosil pipe of Pa, be placed in tube furnace carry out argon atmosphere under sintering, then vitreosil pipe is pushed cold quenching-in water, namely obtains Bi 2se 3monocrystalline bulk;
The temperature and time sintered in tube furnace is: heat up 5 little of 850 DEG C, at 850 DEG C, be incubated 12 hours, then through 50 hours uniform decrease in temperature to 620 DEG C, then be incubated 5 hours;
Prepared by b, Precursor Powder: the Bi walked by a 2se 3monocrystalline bulk is reentered into grind into powder in argon gas glove box;
The evaporation of c, film: powder obtained for b step is put into evaporation coating machine, powder is evenly evaporated on Si (111) monocrystal chip, take out after forming film;
D, after annealing process: c is walked gained film and again enclose air pressure and be less than 1 × 10 -2in the vitreosil pipe of Pa, be placed in tube furnace carry out argon atmosphere under after annealing process, then vitreosil pipe is pushed cold quenching-in water, namely on substrate, obtains Bi 2se 3film.
The temperature and time of after annealing process is: rise to 450 DEG C with 2 DEG C/min, then is incubated 5 hours.
Fig. 3 is the Bi of the embodiment of the present invention two 2se 3the X ray diffracting spectrum of film.As can be seen from the figure all characteristic peaks are (00L) diffraction peak, and without other assorted peaks, show at Si(111) Bi that single crystal substrates grows 2se 3there is very strong C axle orientation.
Fig. 4 is 50000 times of scanning electronic microscope (SEM) photos of the LSMO film of the embodiment of the present invention two.As known in the figure: film sample surfacing, densification, without hole.It can thus be appreciated that this embodiment two has prepared texture well, there is typical layered structure, the Bi that surface compact is smooth 2se 3film.
Embodiment three
One prepares topological insulator Bi 2se 3the method of film, the steps include:
The preparation of a, monocrystalline bulk: purity be 99.999% bismuth meal (Bi) and purity be the selenium powder (Se) of 99.999% by the mol ratio of 2:3.2, weigh in argon gas glove box, grinding, compressing tablet; Enclose air pressure again and be less than 1 × 10 -2in the vitreosil pipe of Pa, be placed in tube furnace carry out argon atmosphere under sintering, then vitreosil pipe is pushed cold quenching-in water, namely obtains Bi 2se 3monocrystalline bulk;
The temperature and time sintered in tube furnace is: heat up 5 little of 850 DEG C, at 850 DEG C, be incubated 12 hours, then through 50 hours uniform decrease in temperature to 620 DEG C, then be incubated 5 hours;
Prepared by b, Precursor Powder: the Bi walked by a 2se 3monocrystalline bulk is reentered into grind into powder in argon gas glove box;
The evaporation of c, film: powder obtained for b step is put into evaporation coating machine, powder is evenly evaporated on quartz substrate, take out after forming film;
D, after annealing process: c is walked gained film and again enclose air pressure and be less than 1 × 10 -2in the vitreosil pipe of Pa, be placed in tube furnace carry out argon atmosphere under after annealing process, then vitreosil pipe is pushed cold quenching-in water, namely on substrate, obtains Bi 2se 3film.
The temperature and time of after annealing process is: rise to 350 DEG C with 2 DEG C/min, then is incubated 4 hours.
Fig. 5 is the Bi of the embodiment of the present invention three 2se 3the X ray diffracting spectrum of film.As can be seen from the figure all characteristic peaks are (00L) diffraction peak, and without other assorted peaks, show that the Bi2Se3 grown on a quartz substrate has very strong C axle orientation.
Fig. 6 is the Bi of the embodiment of the present invention three 2se 38000 times of scanning electronic microscope (SEM) cross-section photographs of film.As known in the figure: film sample surfacing, densification, without hole, section is neat, substrate and film interface clear.It can thus be appreciated that this embodiment three has prepared texture well, there is typical layered structure, the Bi that surface compact is smooth 2se 3film.

Claims (5)

1. prepare topological insulator Bi for one kind 2se 3the method of film, the steps include:
The preparation of a, monocrystalline bulk: high-purity bismuth meal (Bi) and high-purity selenium powder (Se), by the mol ratio of 2:3.2, weigh in argon gas glove box, grinding, compressing tablet; Enclose air pressure again and be less than 1 × 10 -2in the vitreosil pipe of Pa, be placed in tube furnace carry out argon atmosphere under sintering, then quench, namely obtain Bi 2se 3monocrystalline bulk;
Prepared by b, Precursor Powder: the Bi walked by a 2se 3monocrystalline bulk is reentered into grind into powder in argon gas glove box;
The evaporation of c, film: powder obtained for b step is put into evaporation coating machine, powder is evenly evaporated on substrate, take out after forming film;
D, after annealing process: c is walked gained film and again enclose air pressure and be less than 1 × 10 -2in the vitreosil pipe of Pa, be placed in tube furnace carry out argon atmosphere under after annealing process, then quench, namely on substrate, obtain Bi 2se 3film.
2. preparation topological insulator Bi as claimed in claim 1 2se 3the method of film, is characterized in that: described high-purity bismuth meal (Bi) of a step and the purity of high-purity selenium powder (Se) are 99.999%.
3. preparation topological insulator Bi as claimed in claim 1 2se 3the method of film, is characterized in that, the temperature and time sintered in the tube furnace of described a step is: heats up 5 little of 850 DEG C, insulation 12 hours at 850 DEG C, then through 50 hours uniform decrease in temperature to 620 DEG C, then be incubated 5 hours.
4. preparation topological insulator Bi as claimed in claim 1 2se 3the method of film, is characterized in that, in described d step, the temperature and time of after annealing process is: rise to 300 DEG C-450 DEG C with 2 DEG C/min, then be incubated 2-5 hour.
5. preparation topological insulator Bi as claimed in claim 1 2se 3the method of film, is characterized in that, the concrete operations of the quenching in described a and d step are all pushed in cold water by vitreosil pipe.
CN201310487902.8A 2013-10-17 2013-10-17 One prepares topological insulator Bi 2se 3the method of film Expired - Fee Related CN103526297B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310487902.8A CN103526297B (en) 2013-10-17 2013-10-17 One prepares topological insulator Bi 2se 3the method of film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310487902.8A CN103526297B (en) 2013-10-17 2013-10-17 One prepares topological insulator Bi 2se 3the method of film

Publications (2)

Publication Number Publication Date
CN103526297A CN103526297A (en) 2014-01-22
CN103526297B true CN103526297B (en) 2016-04-20

Family

ID=49928626

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310487902.8A Expired - Fee Related CN103526297B (en) 2013-10-17 2013-10-17 One prepares topological insulator Bi 2se 3the method of film

Country Status (1)

Country Link
CN (1) CN103526297B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104275490A (en) * 2014-09-18 2015-01-14 株洲科能新材料有限责任公司 Preparing method of ultra-fine bismuth powder
CN104466647B (en) * 2014-12-19 2018-04-24 深圳大学 Topological insulator saturable absorbing mirror and preparation method thereof
CN106206249B (en) * 2015-06-01 2019-12-06 中国科学院金属研究所 Topological insulator thin film with photovoltaic characteristic and preparation method thereof
CN106521619B (en) * 2015-09-10 2019-04-16 南京理工大学 It is a kind of with the topological insulator laminated film of high spin-polarization electron channel and its preparation
CN107620034B (en) * 2017-07-20 2019-12-27 西南交通大学 Preparation of transparent Bi2Se3Method for making thin film
CN108461382B (en) * 2018-02-06 2020-06-19 天津理工大学 Preparation method for realizing Cu doping of bismuth selenide nano material of topological insulator
CN112689609A (en) * 2018-10-23 2021-04-20 南方科技大学 Black phosphorus phase ultrathin bismuth nanosheet modified composite film and preparation method thereof
CN109706525B (en) * 2018-12-27 2020-07-28 西安交通大学 Bismuth-based topological insulator material and preparation method thereof
CN110699754A (en) * 2019-09-06 2020-01-17 电子科技大学 Magnetic topological insulator heterojunction single crystal material and synthetic method thereof
CN110512285A (en) * 2019-09-26 2019-11-29 吉林师范大学 A kind of preparation method of high quality bismuth selenide monocrystal
CN111501086A (en) * 2020-06-18 2020-08-07 南京大学 High-quality topological semi-metal InBi growth method
CN112160026A (en) * 2020-08-25 2021-01-01 江苏大学 Chromium telluride thin film embedded into multiple nano-sheets, and preparation method and application thereof
CN112687809B (en) * 2020-12-29 2022-04-15 电子科技大学 Antimony telluride photoelectric detector and preparation method thereof
CN113502534A (en) * 2021-06-22 2021-10-15 中国工程物理研究院材料研究所 Preparation method of Ce-doped topological insulator bismuth telluride single crystal film
CN114438599A (en) * 2022-02-10 2022-05-06 扬州大学 Bi2Se3Base topology new material Ti0.1Bi2Se3Single crystal and method for producing the same
CN114808102A (en) * 2022-04-22 2022-07-29 福建师范大学 Method for exciting superconducting performance of Ge-doped FeSeTe single crystal material
CN115341272B (en) * 2022-08-02 2023-09-15 中山大学 Preparation method of millimeter-level two-dimensional topological material bismuth selenide monocrystal

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Conduction Band Parameters of Bi2Se3 from Shubnikov-de Haas Investigations;H. KOHLER;《phys. stat. sol. (b)》;19731231;第58卷;第91-100页 *
Effect of sintering parameter on the microstructure and electrical properties for Bi2Se3 topological insulator crystals;Li Lv 等;《Advanced Materials Research》;20130627;第709卷;第172-175页 *
Raman Scattering in the Bi2(Te0.9Se0.1)3 Solid Solution Films;N. A. Abdullaev 等;《Semiconductors》;20121231;第46卷(第9期);第1140-1144页 *

Also Published As

Publication number Publication date
CN103526297A (en) 2014-01-22

Similar Documents

Publication Publication Date Title
CN103526297B (en) One prepares topological insulator Bi 2se 3the method of film
CN106011783B (en) A kind of high mobility stratiform selenium bismuth oxide semiconductive thin film and preparation method thereof
CN108039403B (en) Batch preparation method of high-quality wafer-level bismuth selenide semiconductor single-crystal film
Yousefi et al. Growth and characterization of ZnO nanowires grown on the Si (1 1 1) and Si (1 0 0) substrates: Optical properties and biaxial stress of nanowires
Wu et al. The densification, microstructure, and electrical properties of aluminum-doped zinc oxide sputtering target for transparent conductive oxide film
CN104988579A (en) Gallium oxide film based on sapphire substrate and growing method of gallium oxide film
CN112359421B (en) Method for preparing layered bismuth-oxygen-selenium semiconductor film by reverse airflow method
CN101826549B (en) Semiconductor heterostructure, preparation method thereof and semiconductor device
CN101339906A (en) Preparation process of novel environmental semi-conductor photoelectronic material beta-FeSi2 film
Zhang et al. Effect of sulfurization temperature of solution-processed Cu2SnS3 absorber for low cost photovoltaic cells
Fix et al. Preparation of β-CuGaO2 thin films by ion-exchange of β-NaGaO2 film fabricated by a solgel method
CN105112868A (en) Preparation method of topology insulator/ferromagnet heterostructure film
CN102270737B (en) ZnO-based diluted magnetic semiconductor film with intrinsic ferromagnetism and preparation method thereof
CN110344025B (en) Two-dimensional Zn-doped Ca2Si nano film and chemical vapor deposition method thereof
CN110724922B (en) Epitaxial AZO film with controllable crystal orientation and polarity on flexible substrate and preparation method thereof
US11136692B2 (en) Plastic semiconductor material and preparation method thereof
Yuan et al. Influence of N2 flow ratio on the properties of hafnium nitride thin films prepared by DC magnetron sputtering
CN100386884C (en) Low temperature process of preparing RE magnetic semiconductor of Mg-doped nanometer zine oxide line
CN113270533B (en) Preparation method of cuprous selenide film
CN107988629A (en) A kind of preparation method of low resistivity p-type cuprous oxide epitaxial film
Zhang et al. Boosted thermoelectric properties of molybdenum oxide thin films deposited on Si substrates
Meng et al. Optical and electrical properties of H and V co-doped ZnO films sputtered at room temperature
Hernández-Hernández et al. Synthesis of visible light emitting self assembled Ge nanocrystals embedded within a SiO2 matrix
CN112864300A (en) Bismuth telluride-based alloy thin film-perovskite type oxide heterojunction composite thermoelectric material and preparation and application thereof
CN102676994B (en) ZnO base diluted magnetic semiconductor film with intrinsic ferromagnetism and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160420

Termination date: 20181017