CN106521615A - 一种基于VGF法的InP晶体生长炉 - Google Patents
一种基于VGF法的InP晶体生长炉 Download PDFInfo
- Publication number
- CN106521615A CN106521615A CN201611122124.2A CN201611122124A CN106521615A CN 106521615 A CN106521615 A CN 106521615A CN 201611122124 A CN201611122124 A CN 201611122124A CN 106521615 A CN106521615 A CN 106521615A
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- Prior art keywords
- heating element
- heater
- furnace
- inp crystal
- element heater
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201611122124.2A CN106521615B (zh) | 2016-12-08 | 2016-12-08 | 一种基于VGF法的InP晶体生长炉 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201611122124.2A CN106521615B (zh) | 2016-12-08 | 2016-12-08 | 一种基于VGF法的InP晶体生长炉 |
Publications (2)
Publication Number | Publication Date |
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CN106521615A true CN106521615A (zh) | 2017-03-22 |
CN106521615B CN106521615B (zh) | 2022-12-27 |
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CN201611122124.2A Active CN106521615B (zh) | 2016-12-08 | 2016-12-08 | 一种基于VGF法的InP晶体生长炉 |
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CN (1) | CN106521615B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112458536A (zh) * | 2020-11-24 | 2021-03-09 | 西北工业大学 | 一种液封熔体法生长锑化铝晶体的方法 |
CN114040522A (zh) * | 2021-11-05 | 2022-02-11 | 中国电子科技集团公司第四十八研究所 | 一种半导体设备加热装置 |
TWI833617B (zh) * | 2023-03-24 | 2024-02-21 | 國立勤益科技大學 | 晶體生長裝置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200517531A (en) * | 2003-10-10 | 2005-06-01 | Showa Denko Kk | Compound semiconductor single crystal and production process thereof |
CN102758248A (zh) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | 单晶炉用均热式加热系统 |
CN104313680A (zh) * | 2014-09-28 | 2015-01-28 | 中国工程物理研究院化工材料研究所 | 一种用于晶体生长的垂直管式炉设备及其使用方法 |
CN105420809A (zh) * | 2015-12-15 | 2016-03-23 | 河南西格马晶体科技有限公司 | 温场竖直方向梯度移动法制备片状单晶的方法及装置 |
-
2016
- 2016-12-08 CN CN201611122124.2A patent/CN106521615B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200517531A (en) * | 2003-10-10 | 2005-06-01 | Showa Denko Kk | Compound semiconductor single crystal and production process thereof |
CN102758248A (zh) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | 单晶炉用均热式加热系统 |
CN104313680A (zh) * | 2014-09-28 | 2015-01-28 | 中国工程物理研究院化工材料研究所 | 一种用于晶体生长的垂直管式炉设备及其使用方法 |
CN105420809A (zh) * | 2015-12-15 | 2016-03-23 | 河南西格马晶体科技有限公司 | 温场竖直方向梯度移动法制备片状单晶的方法及装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112458536A (zh) * | 2020-11-24 | 2021-03-09 | 西北工业大学 | 一种液封熔体法生长锑化铝晶体的方法 |
CN114040522A (zh) * | 2021-11-05 | 2022-02-11 | 中国电子科技集团公司第四十八研究所 | 一种半导体设备加热装置 |
TWI833617B (zh) * | 2023-03-24 | 2024-02-21 | 國立勤益科技大學 | 晶體生長裝置 |
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Publication number | Publication date |
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CN106521615B (zh) | 2022-12-27 |
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Effective date of registration: 20170407 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant after: ZHUHAI DINGTAI XINYUAN CRYSTAL CO.,LTD. Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant before: BEIJING DINGTAI XINYUAN TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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