CN106508091B - A kind of preposition amplification method of complementary metal oxide semiconductors (CMOS) controllable gain and circuit - Google Patents
A kind of preposition amplification method of complementary metal oxide semiconductors (CMOS) controllable gain and circuitInfo
- Publication number
- CN106508091B CN106508091B CN200610056564.2A CN200610056564A CN106508091B CN 106508091 B CN106508091 B CN 106508091B CN 200610056564 A CN200610056564 A CN 200610056564A CN 106508091 B CN106508091 B CN 106508091B
- Authority
- CN
- China
- Prior art keywords
- operational amplifier
- resistance
- current source
- offset
- raceway groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Amplifiers (AREA)
Abstract
The present invention discloses a kind of preposition amplification method of complementary metal oxide semiconductors (CMOS) controllable gain and circuit of micro field sensor.Method is：On complementary metal oxide semiconductors (CMOS), feedback resistance is realized using the long channel MOSFET for being operated in linear zone, the input dynamic range controlled to expand current signal of gain by adjusting bias current, is realized, the two paths of differential signals after Current Voltage conversion is amplified.Circuit includes：Current conversion unit, voltage amplification unit.The signal read circuit of micro field sensor can be miniaturized using the present invention, and be encapsulated on same substrate with sensor, even single-chip integration is realized, significantly reduce the volume of whole sensing system, weight and power consumption, the reliability of sensing system is improved, the present invention has miniaturization, low-power consumption, low cost and high-performance, intelligentized advantage.
Description
Technical field
The invention belongs to micro field sensor technical field, it is related to complementary metal oxide semiconductor,
More particularly, to complementary metal oxide semiconductor.
Background technology
In recent years, the micro field sensor based on MEMS technology is received more and more attention,
Such as bibliography：
[1] Mark N.Horenstein, Patrick R.Stone, " A micro aperture
Electrostatic field mill based on MEMS technology, " Journal of
Electrostatics 51-52 (2001), pp.515-521.
[2] Harold Kirkham, " On the Measurement of Stationary
Electric Fields in Air, " IEEE 2002, pp.524-525.
[3] Patrick S.Riehl, Karen L.Scott, Richard S.Muller, Roger
T.Howe, and John A.Yasaitis, " Electrostatic Charge and Field
Sensors Based on Micromechanical Resonators, " Journal of
Mieroelectromechanical Systems, SS12,5, (2003), pp.577-589.
[4] Patrick Stanley Riehl, Microsystems for Electrostatic
Sensing.Ph.D.Dissertation, UC Berkeley Department of EECS 2002.
[5] Chunrong Peng, Xianxiang Chen, Qiang Bai, Lei Luo, Shanhong
Xia, A Novel High Performance Micromechanical Resonant
Electrostatic Field Sensor Used In Atmospheric Electric Field
Detection, technical digest of 19thIEEE international conference
on micro electro mechanical systems 2006.pp.698-701.
Micro field sensor based on MEMS technology, it is lightweight, be more beneficial for high-altitude or
The outer space is measured；Volume is small, can be used for the details for measuring Electric Field Distribution；In addition if necessary
By micro field sensor and other sensors such as temperature sensor, pressure sensor, humidity sensor
Device etc. integrates also relatively easy.It can be produced in batches additionally due to MEMS technology is intrinsic
Advantage, reduces its cost.The transducer sensitivity reported at present has reached 200V/m, volume
2.5mm × 2.5mm × 0.4mm, but the measuring circuit of the sensor still uses discrete device, adopts
The circuit anti-interference poor performance made with discrete device, and circuit volume is big, as limiting sensor
The bottleneck that system is integrally miniaturized.
In signal read circuit design, the design of pre-amplification circuit is most important, directly determines
Measurement accuracy.Traditional measuring method is to use the operational amplifier with feedback resistance to realize electricity
Flow voltage conversion, due to MEMS electric-field sensors output signal and its faint, amplitude in pA magnitudes,
This resistance is generally very big, and in M Ω magnitude even more highs, this resistance is usual in conventional measurement
Make outside chip, so do and not only occupy pin, bring noise, and it is poor to be unfavorable for two-way
The elimination of sub-signal common mode interference signal.If but so big resistance uses nothing in integrated circuits
Source device, which is realized, can take sizable area, so that it is considered that can not realize.
The content of the invention
Generally make to solve above-mentioned prior art feedback resistance outside chip, so do and do not only take up
Pin, brings noise, and be unfavorable for the elimination of two paths of differential signals common mode interference signal；
If but so big resistance is realized with passive device can take sizable face in integrated circuits
Long-pending defect, it is an object of the invention to provide a kind of complementary metal oxygen for micro field sensor
The preposition amplification method of compound semiconductor controllable gain and circuit.
In order to realize purpose of the present invention, first aspect present invention is to provide a kind of micro electric
The preposition amplification method of complementary metal oxide semiconductor controllable gain of field sensor, its method is as follows：
On complementary metal oxide semiconductor, realized using the long channel MOSFET for being operated in linear zone anti-
Feed resistance, by adjusting bias current, realizes that input of the control of gain to expand current signal is moved
State scope, the two-pass DINSAR voltage signal after being changed to electric current is amplified.
In order to realize purpose of the present invention, second aspect present invention is to provide a kind of micro electric
The complementary metal oxide semiconductor controllable gain pre-amplification circuit of field sensor, including electric current turn
Unit, voltage amplification unit are changed, the two-pass DINSAR current signal of sensor output is the first differential electrical
Stream signal and the second differential current signal feed current conversion unit, for the first difference current to be believed
Number and the second differential current signal be converted into voltage signal, current conversion unit output voltage signal is given
Enter voltage amplification unit, for current conversion unit output voltage to be amplified.
Embodiments in accordance with the present invention, the current conversion unit includes the first operational amplifier, the
Two operational amplifiers, the first long raceway groove feedback pipe, the second long raceway groove feedback pipe, the first offset, the
Two offsets, the first mirror current source, the second mirror current source, the 3rd mirror current source；Wherein：
The source electrode and drain electrode of first long raceway groove feedback pipe and the second long raceway groove feedback pipe are connected across fortune respectively
Put the inverting input and output end of the first operational amplifier and the second operational amplifier；
First offset and the respective grid of the second offset and drain electrode be connected and respectively with the first long ditch
The grid connection of road feedback pipe and the second long raceway groove feedback pipe, for for the first long raceway groove feedback pipe and
Second long raceway groove feedback pipe provides bias voltage, and ensures the first long raceway groove feedback pipe, the second long ditch
Road feedback pipe work is in linear zone；
The source electrode of first offset and the second offset respectively with the first operational amplifier and the second computing
The output of amplifier and the input of the 3rd operational amplifier and four-operational amplifier connect；
The source electrode of first mirror current source, the second mirror current source and the 3rd mirror current source is connected simultaneously
Ground connection；
The grid of first mirror current source, the second mirror current source and the 3rd mirror current source is connected simultaneously
The drain electrode of the 3rd mirror current source is connected to, the drain electrode connects current source input；
The drain electrode of first mirror current source is connected with the grid of the second offset and drain electrode, the second mirror image
The drain electrode of current source and the grid of the first offset and draining is connected, for for the first offset and the
Two offsets provide bias current.
Embodiments in accordance with the present invention, the voltage amplification unit includes the 3rd operational amplifier, the
Four-operational amplifier first resistor, second resistance, 3rd resistor, the 4th resistance；
Two output signal ends of current conversion unit respectively with the 3rd operational amplifier and the 4th computing
The input connection of amplifier, the differential amplification for realizing voltage signal；3rd operation amplifier
The one end of the output end of device respectively with first resistor and 3rd resistor is connected；The other end of first resistor
It is connected with one end of second resistance with another input of the 3rd operational amplifier；Second resistance it is another
One end is grounded；One end of the other end of 3rd resistor and the 4th resistance and the one of four-operational amplifier
Input is connected；The other end of 4th resistance is connected with the output end of four-operational amplifier.
Embodiments in accordance with the present invention, the second resistance and the 4th resistance, if second resistance
R2=mR1, the 4th resistance R4=mR3 first order be the 3rd operational amplifier be with phase operational amplifier,
Its output voltage U01For：
The output voltage that the i.e. four-operational amplifier in the second level is sought with principle of stacking is：
VOUT=(1+m) Ui2-mUo1=(1+m) (Ui2-Ui1), m is positive number in formula.
Beneficial effects of the present invention：The method of the present invention uses long channel MOSFET as feedback resistance,
The problem of chip internal does not allow big resistance easy of integration is solved, relatively common operational amplifier adds instead
The scheme of resistance is fed, technical scheme saves the area of chip, is conducive to two-pass DINSAR
The elimination of signal common mode interference signal, eliminates noise.Miniature electric field can be sensed using the present invention
The signal read circuit miniaturization of device, and be encapsulated in sensor on same substrate, or even realize monolithic
It is integrated, the volume of whole sensing system, weight and power consumption are significantly reduced, sensor is improved
The reliability of system, thus provide it is a kind of have miniaturization, low-power consumption, low cost and high-performance,
Put before the complementary metal oxide semiconductor controllable gain of the micro field sensor of intelligent advantage
Big circuit.
Brief description of the drawings
Fig. 1 is complementary metal oxide semiconductor controllable gain pre-amplification circuit block diagram of the present invention
Fig. 2 is complementary metal oxide semiconductor controllable gain pre-amplification circuit structure chart of the present invention
Fig. 3 is of the invention under different bias currents, and output voltage amplitude is with input current amplitude
Variation relation curve map
Fig. 4 is the relative deviation curve map of present invention simulated point and match point under different bias currents
Embodiment
The present invention is described in detail below in conjunction with accompanying drawing, it is noted that described reality
Apply example and be intended merely to facilitate the understanding of the present invention, and do not play any restriction effect to it.
The method according to the invention, it is linear using being operated on complementary metal oxide semiconductor
The long channel MOSFET in area realizes feedback resistance, by adjusting bias current, realizes the control of gain
To expand the input dynamic range of current signal, the two paths of differential signals voltage after being changed to electric current enters
Row amplification.
Embodiment：
Fig. 1 is that the method for the present invention can be by electric current shown in the pre-amplification circuit block diagram of the present invention
Change-over circuit 1 and voltage amplifier circuit 2 are realized.
According to the present invention, before Fig. 2 is the complementary metal oxide semiconductor controllable gain of the present invention
Big circuit structure diagram is put, figure includes：
Current conversion unit 1, voltage amplification unit 2, the two-pass DINSAR current signal of sensor output
It is that the first differential current signal i1 and the second differential current signal i2 feed current conversion unit 1,
For the first differential current signal i1 and the second differential current signal i2 to be converted into voltage signal,
The output voltage signal of current conversion unit 1 feeds voltage amplification unit 2, single for electric current to be changed
First output voltage is amplified.
The current conversion unit 1 includes：First operational amplifier OPA1, the second operational amplifier
OPA2, the first long raceway groove feedback pipe M1, the second long raceway groove feedback pipe M2, the first offset M3, the
Two offset M4, the first mirror current source M5, the second mirror current source M6, the 3rd mirror current source
M7；Wherein：
The first long raceway groove feedback pipe M2 of long raceway groove feedback pipe M1 and second source electrode and drain electrode respectively across
Be connected on amplifier the first operational amplifier OPA1 and the second operational amplifier OPA2 inverting input and
Output end；
First offset M3 and the second respective grids of offset M4 and drain electrode are connected and respectively with the
The one long long raceway groove feedback pipe M2 of raceway groove feedback pipe M1 and second grid connection, for being grown for first
Raceway groove feedback pipe M1 and second long raceway groove feedback pipe M2 provide bias voltage, and ensures the first long ditch
Road feedback pipe M1, the second long raceway groove feedback pipe M2 is operated in linear zone；
First offset M3 and the second offset M4 source electrode respectively with the first operational amplifier OPA1
Output and the 3rd operational amplifier OPA3 and the 4th operation amplifier with the second operational amplifier OPA2
Device OPA4 inputs connect；
First mirror current source M5, the second mirror current source M6 and the 3rd mirror current source M7 source
Extremely it is connected and is grounded；
First mirror current source M5, the second mirror current source M6 and the 3rd mirror current source M7 grid
Extremely it is connected and is connected to the 3rd mirror current source M7 drain electrode, the drain electrode connects current source input；
First mirror current source M5 drain electrode is connected with the second offset M4 grid and drain electrode, the
Two mirror current source M6 drain electrode and the first offset M3 grid and draining is connected, for for the
One offset M3 and the second offset M4 provides bias current.
The voltage amplification unit 2 includes：3rd operational amplifier OPA3, four-operational amplifier
OPA4, first resistor R1, second resistance R2, 3rd resistor R3, the 4th resistance R4；
Two output signal ends of current conversion unit 1 respectively with the 3rd operational amplifier OPA3 and
Four-operational amplifier OPA4 input connection, the differential amplification for realizing voltage signal；The
Three operational amplifier OPA3 output end respectively with first resistor R1With 3rd resistor R3One end connect
Connect；First resistor R1The other end and second resistance R2One end and the 3rd operational amplifier OPA3
Another input connection；Second resistance R2The other end ground connection；3rd resistor R3The other end and
4th resistance R4One end be connected with a four-operational amplifier OPA4 input；4th resistance
R4The other end be connected with four-operational amplifier OPA4 output end.
The second resistance R2With the 4th resistance R4If, second resistance R2=mR1, the 4th resistance is
The R4=mR3 first order is that the 3rd operational amplifier OPA3 is with phase operational amplifier, its output voltage
For：
The output voltage that the i.e. four-operational amplifier OPA4 in the second level is sought with principle of stacking is：
UOUT=(1+m) Ui2-mUo1=(1+m) (Ui2-Ui1), m is positive number in formula.
When taking m=100 in embodiment, then UOUT=101 (Ui2-Ui1), i.e., the difference of output is believed
Number it is exaggerated 101 times.
Electric current i1, electric current i2 are the two-pass DINSAR current signals of sensor output.
First operational amplifier OPA1, the second operational amplifier OPA2, the 3rd operational amplifier OPA3
With four-operational amplifier OPA4 using double-width grinding, the operational amplifier of Single-end output.
First long raceway groove feedback pipe M1 in figure, the second long raceway groove feedback pipe M2 is used work
In the long channel MOSFET of linear zone, size is 1 μm/250 μm.
First offset M3, the second offset M4 provides biasing and causes the first long raceway groove feedback pipe M1,
Second long raceway groove feedback pipe M2 gate voltage is controllable.
IBIAS is bias current inputs, thus it is possible to vary the first offset M3, the second offset M4
Grid voltage to control the equivalent resistance of the long channel MOSFET to realize that variable gain is controlled.
Second level voltage amplifier circuit uses the differential amplifier circuit of high input impedance, takes here
R2=R4=100R1=100R3. the first offset M3, the second offset M4 sizes are identical, are 1
μm/250μm.First mirror current source M5, the second mirror current source M6, the 3rd mirror current source
M7 sizes are identical, are 5 μm/2 μm
Fig. 3 is of the invention under different bias currents, and output voltage amplitude is with input current amplitude
Variation relation curve map, gives under different bias currents, the first operational amplifier OPA1
Output voltage amplitude with the change of input current amplitude relation, wherein defeated under each bias current
Enter current amplitude and emulate from 1pA to 100pA to obtain 100 points, straight line is by this 100 point minimums
Two, which multiply fitting, obtains.
Fig. 4 is the relative deviation curve of present invention simulated point and match point under different bias currents
The relative deviation of figure, simulated point and match point is provided by Fig. 4, except being 0.1nA in bias current
Under 1nA situations, simulated point (＜ 15pA) deviation when input range is relatively low is larger outer, other each
The relative deviation of simulated point is almost 0.Table 1 gives the equivalent resistance under different bias currents.
The equivalent resistance of long channel MOSFET under the different bias currents of table 1.
| Bias current size (A) | 1u | 100n | 10n | 1n | 0.1n |
| Equivalent resistance (Ω) | 7.25M | 14.5M | 52.2M | 151M | 212M |
Bias current and the first long raceway groove feedback pipe M1, the second long raceway groove feedback pipe M2 size can
Needed to carry out proportional regulation according to practical application, to obtain required equivalent resistance.
Above description is to be used to realize the present invention and embodiment, and therefore, the scope of the present invention is not
It should be limited by this description.It should be appreciated by those skilled in the art do not departing from the model of the present invention
Any modification or partial replacement enclosed, the scope for belonging to the claims in the present invention to limit.
Claims (5)
1. a kind of preposition amplification method of complementary metal oxide semiconductor controllable gain, its feature is as follows：
On complementary metal oxide semiconductor, realized using the long channel MOSFET for being operated in linear zone anti-
Feed resistance, by adjusting bias current, realizes the control of gain to expand the input dynamic of current signal
Scope, the two-pass DINSAR voltage signal after being changed to electric current amplifies.
2. a kind of complementary metal oxide semiconductor controllable gain pre-amplification circuit, it is characterised in that：
Current conversion unit (1), voltage amplification unit (2), the two-pass DINSAR electric current letter of sensor output
Number feeding electric current for the first differential current signal (i1) and the second differential current signal (i2) changes
Unit (1), for by the first differential current signal (i1) and the second differential current signal (i2)
Voltage signal is converted into, current conversion unit (1) output voltage signal feeds voltage amplification unit (2),
For current conversion unit output voltage to be amplified.
3. controllable gain pre-amplification circuit as claimed in claim 2, it is characterised in that：The electricity
Stream-converting unit (1) include the first operational amplifier (OPA1), the second operational amplifier (OPA2),
First long raceway groove feedback pipe (M1), the second long raceway groove feedback pipe (M2), the first offset (M3),
Second offset (M4), the first mirror current source (M5), the second mirror current source (M6), the 3rd
Mirror current source (M7)；Wherein：
The source electrode and drain electrode of first long raceway groove feedback pipe (M1) and the second long raceway groove feedback pipe (M2) are distinguished
It is connected across the anti-phase of the operational amplifier of amplifier first (OPA1) and the second operational amplifier (OPA2)
Input and output end；
First offset (M3) is connected and divided with drain electrode with the second offset (M4) respective grid
Grid not with the first long raceway groove feedback pipe (M1) and the second long raceway groove feedback pipe (M2) is connected, and is used
In being the first long raceway groove feedback pipe (M1) and second long raceway groove feedback pipe (M2) offer bias voltage, and
Ensure the first long raceway groove feedback pipe (M1), the second long raceway groove feedback pipe (M2) is operated in linear zone；
The source electrode of first offset (M3) and the second offset (M4) respectively with the first operation amplifier
The output of device (OPA1) and the second operational amplifier (OPA2) and the 3rd operational amplifier (OPA3) and
Four-operational amplifier (OPA4) input connects；
First mirror current source (M5), the second mirror current source (M6) and the 3rd mirror current source (M7)
Source electrode be connected and be grounded；
First mirror current source (M5), the second mirror current source (M6) and the 3rd mirror current source (M7)
Grid be connected and be connected to the drain electrode of the 3rd mirror current source (M7), the drain electrode connects current source input；
The drain electrode of first mirror current source (M5) connects with the grid of the second offset (M4) and drain electrode
Connect, the drain electrode of the second mirror current source (M6) connects with the grid of the first offset (M3) and drain electrode
Connect, for being that the first offset (M3) and the second offset (M4) provide bias current.
4. controllable gain pre-amplification circuit as claimed in claim 2, it is characterised in that：The electricity
Pressing big unit (2) includes the 3rd operational amplifier (OPA3), four-operational amplifier (OPA4)
First resistor (R1), second resistance (R2), 3rd resistor (R3), the 4th resistance (R4)；
Two output signal ends of current conversion unit (1) respectively with the 3rd operational amplifier (OPA3)
Connected with an input of four-operational amplifier (OPA4), the difference for realizing voltage signal is put
Greatly；The output end of 3rd operational amplifier (OPA3) respectively with first resistor (R1) and 3rd resistor
(R3) one end connection；First resistor (R1) the other end and second resistance (R2) one end with
Another input connection of 3rd operational amplifier (OPA3)；Second resistance (R2) the other end
Ground connection；3rd resistor (R3) the other end and the 4th resistance (R4) one end put with the 4th computing
Another input connection of big device (OPA4)；4th resistance (R4) the other end and the 4th computing
The output end connection of amplifier (OPA4).
5. controllable gain pre-amplification circuit as claimed in claim 2, it is characterised in that：Described
Two resistance (R2) and the 4th resistance (R4), if second resistance (R2) it is R2=mR1, the 4th resistance
(R4) be the R4=mR3 first order be the 3rd operational amplifier (OPA3) be with phase operational amplifier,
Its output voltage is：
The output voltage that the i.e. four-operational amplifier (OPA4) in the second level is sought with principle of stacking is：
VOUT=(1+m) Ui2-mU01=(1+m) (Ui2-Ui1), m is positive number in formula.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610056564.2A CN106508091B (en) | 2006-08-11 | 2006-08-11 | A kind of preposition amplification method of complementary metal oxide semiconductors (CMOS) controllable gain and circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610056564.2A CN106508091B (en) | 2006-08-11 | 2006-08-11 | A kind of preposition amplification method of complementary metal oxide semiconductors (CMOS) controllable gain and circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106508091B true CN106508091B (en) | 2011-06-01 |
Family
ID=58264214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610056564.2A Active CN106508091B (en) | 2006-08-11 | 2006-08-11 | A kind of preposition amplification method of complementary metal oxide semiconductors (CMOS) controllable gain and circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106508091B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107210716A (en) * | 2015-01-12 | 2017-09-26 | 高通股份有限公司 | For calibrating the method and apparatus that mutual conductance or gain change with technique or condition in difference channel |
| CN108494376A (en) * | 2018-03-27 | 2018-09-04 | 商丘职业技术学院 | Blending teaching and learning model control system based on computer network |
| CN112888952A (en) * | 2018-10-18 | 2021-06-01 | 株式会社半导体能源研究所 | Semiconductor device, semiconductor wafer, and electronic apparatus |
-
2006
- 2006-08-11 CN CN200610056564.2A patent/CN106508091B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107210716A (en) * | 2015-01-12 | 2017-09-26 | 高通股份有限公司 | For calibrating the method and apparatus that mutual conductance or gain change with technique or condition in difference channel |
| CN108494376A (en) * | 2018-03-27 | 2018-09-04 | 商丘职业技术学院 | Blending teaching and learning model control system based on computer network |
| CN112888952A (en) * | 2018-10-18 | 2021-06-01 | 株式会社半导体能源研究所 | Semiconductor device, semiconductor wafer, and electronic apparatus |
| US11935961B2 (en) | 2018-10-18 | 2024-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, and electronic device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207817038U (en) | A kind of current measurement circuit and multimeter | |
| CN106508091B (en) | A kind of preposition amplification method of complementary metal oxide semiconductors (CMOS) controllable gain and circuit | |
| CN111464136B (en) | High-precision operational amplification circuit integrating chopping and automatic zeroing | |
| CN104836542A (en) | Pre-amplifier for measuring wind-tunnel balance signal and calibration measurement method | |
| Saukoski et al. | Fully integrated charge sensitive amplifier for readout of micromechanical capacitive sensors | |
| CN104604128A (en) | Amplifier circuit and amplifier-circuit chip | |
| CN209590068U (en) | Constant current source power supply system | |
| Utrobicic et al. | A floating multi-channel picoammeter for micropattern gaseous detector current monitoring | |
| CN205509991U (en) | Amplifier circuit and sensor signal processing apparatus | |
| WO2013085111A1 (en) | Current detection device for a multiple sensor array | |
| CN112886934A (en) | Programmable gain amplifier with adjustable input and output voltage | |
| CN109444792A (en) | A kind of circuit reducing current sensor sampling error | |
| CN202948026U (en) | Differential capacitance voltage conversion circuit and acceleration sensor detection system | |
| CN100379155C (en) | Level shift circuit | |
| CN209132332U (en) | A kind of high-precision Larger Dynamic pulse power measurement device | |
| CN102981021A (en) | Differential capacitance-voltage conversion circuit and acceleration sensor detection system | |
| Kong et al. | A Pseudo-Differential Capacitive MEMS Accelerometer Analog Front-End Design | |
| Li et al. | Study of a closed-loop high-precision front-end circuit for tunneling magneto-resistance sensors | |
| CN109341730A (en) | A kind of linear hall sensor circuit of adjustable track to track output of sensitivity | |
| CN201173760Y (en) | Differential transformer location signal amplification transmission equipment | |
| KR20030053492A (en) | Universal instrumentation amplifier | |
| CN209821627U (en) | Multichannel strain signal synchronous acquisition system | |
| CN105680810B (en) | Amplifying circuit, method for amplifying signal and transducing signal processing unit | |
| Kamarainen et al. | A micropower front end for three-axis capacitive microaccelerometers | |
| Xu et al. | A 95 dB SFDR, 30 mW Digital Interface Circuit for a TMR Sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR03 | Grant of secret patent right | ||
| DC01 | Secret patent status has been lifted | ||
| DCSP | Declassification of secret patent |