CN106505834B - Intelligent power module - Google Patents

Abstract

The present invention provides an intelligent power module, comprising: the base of the IGBT of the upper bridge arm of the third phase is connected to the first end of the upper bridge arm, and the second end of the upper bridge arm is connected to the positive drive end of the upper bridge arm of the third phase; The base of the three-phase lower bridge arm IGBT is connected to the first end of the lower bridge arm, and the second end of the lower bridge arm is connected to the positive drive end of the third phase lower bridge arm. Through the technical solution of the invention, the thermal characteristics of the IGBT in the linear region can be accurately detected, and then flexible thermal analysis of the IGBT can be realized.

Description

Intelligent Power Module

technical field

The present invention relates to the technical field of intelligent power modules, in particular to an intelligent power module.

Background technique

Intelligent Power Module, or IPM (Intelligent Power Module), is a power drive device (Deriver Integrated Circuit, or Driver IC) that combines power electronics and integrated circuit technology. Due to the advantages of high integration and high reliability, intelligent power modules are winning more and more markets, especially suitable for frequency converters and various inverter power supplies for driving motors, and are ideal for frequency control, metallurgical machinery, electric traction, servo Power electronic devices commonly used in driving and frequency conversion household appliances.

The circuit structure of an existing intelligent power module 100 is shown in FIG. 1 :

The VCC terminal of the HVIC (High Voltage integrated circuit, high-voltage integrated control circuit) tube 101 serves as the positive terminal VCC(H) of the power supply in the low-voltage area of the above-mentioned intelligent power module 100, and VCC(H) is generally 15V;

The VCC terminal of the LVIC (Low Voltage integrated circuit, low voltage integrated control circuit) tube 102 is used as the positive terminal VCC(L) of the power supply in the low-voltage area of the above-mentioned intelligent power module 100, and VCC(L) is generally 15V;

The IN (UH) terminal of the above-mentioned HVIC tube 101 serves as the input terminal UHIN of the U-phase upper bridge arm of the above-mentioned intelligent power module 100;

The IN (VH) terminal of the above-mentioned HVIC tube 101 is used as the input terminal VHIN of the V-phase upper bridge arm of the above-mentioned intelligent power module 100;

The IN(WH) terminal of the above-mentioned HVIC tube 101 serves as the W-phase upper bridge arm input terminal WHIN of the above-mentioned intelligent power module 100;

The IN (UL) terminal of the above-mentioned LVIC tube 102 is used as the input terminal ULIN of the U-phase lower bridge arm of the above-mentioned intelligent power module 100;

The IN (VL) terminal of the above-mentioned LVIC tube 102 is used as the input terminal VLIN of the V-phase lower bridge arm of the above-mentioned intelligent power module 100;

The IN (WL) terminal of the above-mentioned LVIC tube 102 serves as the W-phase lower bridge arm input terminal WLIN of the above-mentioned intelligent power module 100;

Here, the six inputs of the U, V, and W three-phases of the above-mentioned intelligent power module 100 receive input signals of 0-5V;

The COM end of the HVIC tube 101 is connected to the COM end of the LVIC tube 102;

The COM terminal of the above-mentioned LVIC tube 102 is used as the negative terminal COM of the power supply in the low-voltage area of the above-mentioned intelligent power module 100;

The UVB end of the above-mentioned HVIC tube 101 is used as the positive terminal VB(U) of the power supply in the U-phase high-voltage area of the above-mentioned intelligent power module 100;

The OUT (UH) end of the HVIC tube 101 is connected to the gate of the U-phase upper bridge arm IGBT tube 121;

The UVS end of the above-mentioned HVIC tube 101 is connected to the emitter of the above-mentioned IGBT tube 121, the anode of the FRD tube 111, the collector of the U-phase lower bridge arm IGBT tube 124, and the cathode of the FRD tube 114, and serves as the U of the above-mentioned intelligent power module 100. The negative terminal U of the power supply in the phase high voltage area;

The VVB terminal of the above-mentioned HVIC tube 101 is used as the positive terminal VB(V) of the power supply in the U-phase high-voltage area of the above-mentioned intelligent power module 100;

The OUT (VH) end of the HVIC tube 101 is connected to the gate of the V-phase upper bridge arm IGBT tube 123;

The VVS end of the above-mentioned HVIC tube 101 is connected to the emitter of the above-mentioned IGBT tube 122, the anode of the FRD tube 112, the collector of the V-phase lower bridge arm IGBT tube 125, and the cathode of the FRD tube 115, and serves as the W of the above-mentioned intelligent power module 100. The negative terminal V of the power supply in the phase high voltage area;

The WVB terminal of the above-mentioned HVIC tube 101 serves as the positive terminal VB(W) of the power supply in the W-phase high-voltage area of the above-mentioned intelligent power module 100;

The OUT (WH) end of the HVIC tube 101 is connected to the gate of the W-phase upper bridge arm IGBT tube 123;

The WVS end of the above-mentioned HVIC tube 101 is connected to the emitter of the above-mentioned IGBT tube 123, the anode of the FRD tube 113, the collector of the W-phase lower bridge arm IGBT tube 126, and the cathode of the FRD tube 116, and serves as the W of the above-mentioned intelligent power module 100. The negative terminal W of the power supply in the phase high voltage area;

The OUT (UL) end of the above-mentioned LVIC tube 102 is connected to the gate of the above-mentioned IGBT tube 124;

The OUT (VL) end of the above-mentioned LVIC tube 102 is connected to the gate of the above-mentioned IGBT tube 125;

The OUT (WL) end of the above-mentioned LVIC tube 102 is connected to the gate of the above-mentioned IGBT tube 126;

The emitter of the above-mentioned IGBT tube 124 is connected to the anode of the above-mentioned FRD tube 114, and serves as the U-phase low-voltage reference terminal NU of the above-mentioned intelligent power module 100;

The emitter of the above-mentioned IGBT tube 125 is connected to the anode of the above-mentioned FRD tube 115, and serves as the V-phase low voltage reference terminal NV of the above-mentioned intelligent power module 100;

The emitter of the above-mentioned IGBT tube 126 is connected to the anode of the above-mentioned FRD tube 116, and serves as the W-phase low-voltage reference terminal NW of the above-mentioned intelligent power module 100;

The collector of the above-mentioned IGBT tube 121, the cathode of the above-mentioned FRD tube 111, the collector of the above-mentioned IGBT tube 122, the cathode of the above-mentioned FRD tube 112, the collector of the above-mentioned IGBT tube 123, and the cathode of the above-mentioned FRD tube 113 are connected, and serve as the above-mentioned intelligent The high voltage input terminals P and P of the power module 100 are generally connected to 300V.

The function of the above-mentioned HVIC tube 101 is:

Transmit the 0~5V logic signals of the input terminals IN(UH), IN(VH), IN(WH) to the output terminals OUT(UH), OUT(VH), OUT(WH), OUT(UH), OUT respectively (VH) and OUT(WH) are logic signals from VS to VS+15V.

The effect of above-mentioned LVIC tube 101 is:

Transmit the 0~5V logic signals of the input terminals IN(UL), IN(VL), IN(WL) to the output terminals OUT(UL), OUT(VL), OUT(WL), OUT(UL), OUT( VL), OUT(WL) are logic signals of 0-15V.

FIG. 2 shows the structure of an existing intelligent power module 100 .

The above-mentioned intelligent power module 100 has the following structure, which includes: a circuit substrate 206; the above-mentioned circuit wiring 208 formed on the insulating layer 207 on the surface of the above-mentioned circuit substrate 206; the above-mentioned IGBT tubes 121~ 126. Components such as the above-mentioned FRD tubes 111-116, the above-mentioned HVIC tube 101; metal wires 205 connecting the components and the above-mentioned circuit wiring 208; pins 201 connected to the above-mentioned circuit wiring 208; at least one side of the above-mentioned circuit substrate 206 is sealed The resin 202 seals the entire circuit board 206 in order to improve sealing performance, and seals with the back surface of the aluminum substrate 206 exposed to the outside in order to improve heat dissipation.

The thermal analysis process of the intelligent power module in the prior art will be described below with reference to FIG. 3 to FIG. 5 .

As shown in FIG. 3 , the above-mentioned IGBT is a device under test, and the collector of the IGBT is connected to the anode of the test current Im for measuring the temperature of the IGBT under test, and is connected to the anode of the heating current Ih through a switch S. The negative poles of Ih and Im are connected to the IGBT emitter and grounded. The above circuit is the gate electrode drive circuit (ie Gate Driver) of the IGBT. During the test, the voltmeter is used to measure the entire IGBT voltage drop.

As shown in FIG. 4 , the above-mentioned circuits are replaced by the above-mentioned HVIC101 or LVIC102 in the intelligent power module 100 . According to the input and output properties of the above-mentioned HVIC or the above-mentioned LVIC, the voltage Vge between the gate voltage of the above-mentioned IGBT and the emitter can be obtained as shown in FIG. 5 .

It can be seen from FIG. 5 that the six IGBT tubes of the existing intelligent power module are uniformly controlled by the HVIC tube or the LVIC tube. Moreover, the HVIC tube or the LVIC tube has a single control capability for the gate voltage. The working voltage of the HVIC tube or LVIC tube is 10-20V, and the recommended working voltage is 15V. When the working voltage is lower than 10V, the HVIC tube or LVIC tube does not work, the Vge output is 0, and the above-mentioned IGBT is turned off. When the working voltage is 10-20V, the HVIC tube or LVIC tube outputs the power supply input voltage, and the above-mentioned IGBT is in the saturation region. Therefore, the above-mentioned IGBT can only be in a judging or saturated state under the control of the HVIC or LVIC.

In addition, the resistance value of the above-mentioned IGBT in the saturation region is different from that in the linear region. Since the resistance value is directly related to the heat conduction properties of silicon, the above-mentioned intelligent power module 100 can only study the heat conduction properties of the above-mentioned IGBT in the saturation region, but not Measuring the properties of the above-mentioned IGBT in the linear region cannot have a comprehensive thermal characteristic study for the above-mentioned IGBT.

In addition, the power cycle test is an important method for testing the life of an intelligent power module, and it is also a research method for analyzing thermal failure. The above-mentioned IGBT is in the saturation region, and the fatigue of the metal wire welding point is easily characterized in the power cycle test; when the above-mentioned IGBT is in the linear region, the fatigue characteristics of the power chip and the materials below it are easy to be manifested in the power cycle test. Therefore, the above-mentioned power cycle characterization of the smart power module 100 mostly reflects the life of the metal solder joints, but cannot fully reflect the thermal reliability of the module.

Based on the above considerations, in the above-mentioned intelligent power module 100, the driving circuit for the above-mentioned IGBT composed of HVIC tubes or LVIC tubes lacks flexibility in characterization of thermal characteristics, and cannot evaluate the reliability of the above-mentioned intelligent power module 100 from a thermal point of view. sex.

Contents of the invention

The present invention aims to solve at least one of the technical problems existing in the prior art or related art.

Therefore, an object of the present invention is to provide an intelligent power module.

In order to achieve the above object, according to an embodiment of the first aspect of the present invention, an intelligent power module is proposed, including: the base of the upper bridge arm IGBT of the third phase is connected to the first end of the upper bridge arm, and the second end of the upper bridge arm The terminal is connected to the positive driving terminal of the upper bridge arm of the third phase; the base of the IGBT of the lower bridge arm of the third phase is connected to the first terminal of the lower bridge arm, and the second terminal of the lower bridge arm is connected to the positive driving terminal of the lower bridge arm of the third phase .

According to the intelligent power module of the embodiment of the present invention, the intelligent power module includes: a high voltage input terminal, a signal output terminal of the upper bridge arm of the first phase, a signal output terminal of the upper bridge arm of the second phase, and a signal output terminal of the upper bridge arm of the third phase end, the signal output end of the lower bridge arm of the first phase, the signal output end of the lower bridge arm of the second phase and the signal output end of the lower bridge arm of the third phase, the first end of the upper bridge arm and the second end of the upper bridge arm electrically connected, and The first end of the lower bridge arm and the second end of the lower bridge arm are electrically connected; the integrated control circuit of the upper bridge arm is provided with the positive drive terminal of the upper bridge arm of the first phase, the positive drive end of the upper bridge arm of the second phase and the upper bridge arm of the third phase. The positive drive end of the bridge arm, and the negative drive end of the upper bridge arm of the first phase, the negative drive end of the upper bridge arm of the second phase, and the negative drive end of the upper bridge arm of the third phase; the upper bridge arm IGBT of the first phase, the first phase The base of the upper bridge arm IGBT of one phase is connected to the positive drive terminal of the upper bridge arm of the first phase, the collector of the upper bridge arm IGBT of the first phase is connected to the high voltage input end, and the upper bridge arm of the first phase The emitter of the arm IGBT is simultaneously connected to the negative drive terminal of the upper bridge arm of the first phase and the signal output end of the upper bridge arm of the first phase; the upper bridge arm IGBT of the second phase, and the upper bridge arm IGBT of the second phase The base is connected to the positive drive terminal of the upper bridge arm of the second phase, the collector of the upper bridge arm IGBT of the second phase is connected to the high voltage input end, and the emitter of the upper bridge arm IGBT of the second phase is simultaneously connected to To the negative drive end of the upper bridge arm of the second phase and the signal output end of the upper bridge arm of the second phase; the upper bridge arm IGBT of the third phase, the collector of the upper bridge arm IGBT of the third phase is connected to the high voltage The input end, the emitter of the upper bridge arm IGBT of the third phase is simultaneously connected to the negative drive end of the upper bridge arm of the third phase and the signal output end of the upper bridge arm of the third phase; the integrated control circuit of the lower bridge arm is set. There are positive driving end of the lower bridge arm of the first phase, positive driving end of the lower bridge arm of the second phase and positive driving end of the lower bridge arm of the third phase, and a negative driving end of the lower bridge arm of the first phase, a lower bridge arm of the second phase The negative drive terminal and the negative drive terminal of the lower bridge arm of the third phase; the lower bridge arm IGBT of the first phase is symmetrically arranged on the first phase upper bridge arm IGBT, and the base of the first phase lower bridge arm IGBT is connected to the The positive drive end of the lower bridge arm of the first phase, the collector of the lower bridge arm IGBT of the first phase is connected to the high voltage input end, and the emitter of the lower bridge arm IGBT of the first phase is connected to the first phase The negative drive end of the lower bridge arm and the signal output end of the lower bridge arm of the first phase; the lower bridge arm IGBT of the second phase symmetrically arranged with the upper bridge arm IGBT of the second phase, and the lower bridge arm IGBT of the second phase The base is connected to the positive drive end of the lower bridge arm of the second phase, the collector of the lower bridge arm IGBT of the second phase is connected to the high-voltage input end, and the emitter of the lower bridge arm IGBT of the second phase is simultaneously connected to To the negative drive end of the lower bridge arm of the second phase and the signal output end of the lower bridge arm of the second phase; the lower bridge arm IGBT of the third phase symmetrically arranged with the upper bridge arm IGBT of the third phase, the third phase The collector of the phase lower bridge arm IGBT is connected to the high-voltage input terminal, and the emitter of the third phase lower bridge arm IGBT is simultaneously connected to the negative drive terminal of the third phase lower bridge arm and the third phase lower bridge arm arm signal output.

By setting the base of the upper bridge arm IGBT of the third phase to be connected to the first end of the upper bridge arm, and the second end of the upper bridge arm to be connected to the positive drive end of the upper bridge arm of the third phase, the first end of the upper bridge arm is connected to the upper bridge arm of the first phase. The positive driving terminal of the bridge arm is electrically connected, therefore, the base of the upper bridge arm IGBT of the third phase is indirectly connected to the positive driving terminal of the upper bridge arm of the first phase, and similarly, the base of the lower bridge arm IGBT of the third phase The pole is connected to the first end of the lower bridge arm, and the second end of the lower bridge arm is connected to the positive driving end of the lower bridge arm of the third phase, that is, the base of the IGBT of the lower bridge arm of the third phase is indirectly connected to the lower bridge arm of the first phase. The positive drive terminal of the bridge arm can control the third phase upper arm IGBT and the third phase lower arm IGBT to be in the linear region or the saturation region, so that the junction-to-case thermal resistance and power cycle of the IGBT can be more comprehensively characterized.

Among them, combined with the intelligent power module of the prior art, the third-phase upper bridge arm IGBT is a W-phase upper bridge arm IGBT, which is located in the middle area of the intelligent power module, and the third-phase lower bridge arm IGBT is a W-phase lower bridge arm IGBT , is located in the edge area of the intelligent power module, therefore, by detecting the thermal characteristics of the third phase upper bridge arm IGBT and the third phase lower bridge arm IGBT, the thermal distribution of the intelligent power module can be reflected more accurately.

In addition, the upper bridge arm IGBT and the lower bridge arm IGBT of any corresponding group are not turned on at the same time. The upper bridge arm IGBT and the lower bridge arm IGBT of the intelligent power module of the present application adopt a symmetrical design, so it is convenient to control the upper bridge arm IGBT and the lower bridge arm IGBT. The on-off state of the lower bridge arm IGBT.

The intelligent power module according to the above-mentioned embodiments of the present invention may also have the following technical features:

Preferably, the integrated control circuit of the upper bridge arm and the integrated control circuit of the lower bridge arm alternately output driving signals to respectively drive the upper bridge arm IGBT of the first phase, the upper bridge arm IGBT of the second phase and the upper bridge arm IGBT of the third phase to conduct, Or drive the lower bridge arm IGBT of the first phase, the lower bridge arm IGBT of the second phase and the lower bridge arm IGBT of the third phase to conduct.

Preferably, it also includes: a first upper bridge arm fast recovery diode, the anode of the first upper bridge arm fast recovery diode is connected to the emitter of the first phase upper bridge arm IGBT, and the cathode of the first upper bridge arm fast recovery diode is connected to The collector of the upper arm IGBT of the first phase.

Preferably, it also includes: a second upper bridge arm fast recovery diode, the anode of the second upper bridge arm fast recovery diode is connected to the emitter of the second phase upper bridge arm IGBT, and the cathode of the second upper bridge arm fast recovery diode is connected to The collector of the upper arm IGBT of the second phase.

Preferably, it also includes: a third upper bridge arm fast recovery diode, the anode of the third upper bridge arm fast recovery diode is connected to the emitter of the third phase upper bridge arm IGBT, and the cathode of the third upper bridge arm fast recovery diode is connected to The collector of the upper arm IGBT of the third phase.

Preferably, it also includes: a fast recovery diode of the first lower bridge arm, the anode of the fast recovery diode of the first lower bridge arm is connected to the emitter of the first phase lower bridge arm IGBT, and the cathode of the fast recovery diode of the first lower bridge arm is connected to The collector of the lower arm IGBT of the first phase.

Preferably, it also includes: a second lower bridge arm fast recovery diode, the anode of the second lower bridge arm fast recovery diode is connected to the emitter of the second phase lower bridge arm IGBT, and the cathode of the second lower bridge arm fast recovery diode is connected to The collector of the lower arm IGBT of the second phase.

Preferably, it also includes: a fast recovery diode of the third lower bridge arm, the anode of the fast recovery diode of the third lower bridge arm is connected to the emitter of the IGBT of the lower bridge arm of the third phase, and the cathode of the fast recovery diode of the third lower bridge arm is connected to The collector of the lower arm IGBT of the third phase.

According to an embodiment of the second aspect of the present invention, a power electronic device is provided, including an intelligent power module according to the technical solution of the first aspect above.

Preferably, the power electronic device is an air conditioner.

Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.

Description of drawings

The above and/or additional aspects and advantages of the present invention will become apparent and comprehensible from the description of the embodiments in conjunction with the following drawings, wherein:

FIG. 1 shows a schematic diagram of an intelligent power module in the prior art;

Fig. 2 shows a schematic diagram of a hardware circuit of the intelligent power module shown in Fig. 1;

Fig. 3 shows the test schematic diagram of thermal analysis on smart power in the prior art;

Fig. 4 shows a simplified schematic diagram of performing thermal analysis on smart power in the prior art;

Fig. 5 shows the test result diagram of thermal analysis on smart power in the prior art;

Fig. 6 shows a schematic diagram of an intelligent power module according to an embodiment of the present invention;

FIG. 7 shows a schematic diagram of a hardware circuit of an intelligent power module according to an embodiment of the present invention;

FIG. 8 shows a schematic diagram of a peripheral circuit for thermal analysis of an intelligent power module according to an embodiment of the present invention.

Detailed ways

In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.

In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

Fig. 6 shows a schematic diagram of an intelligent power module according to an embodiment of the present invention.

Fig. 7 shows a schematic diagram of a hardware circuit of an intelligent power module according to an embodiment of the present invention.

FIG. 8 shows a schematic diagram of a peripheral circuit for thermal analysis of an intelligent power module according to an embodiment of the present invention.

As shown in FIGS. 6 to 8 , the intelligent power module 300 according to the embodiment of the present invention includes: the base of the third-phase upper bridge arm IGBT323 is connected to the first end WHG of the upper bridge arm, and the second end WHT of the upper bridge arm Connected to the positive drive end of the upper bridge arm of the third phase; the base of the IGBT326 of the lower bridge arm of the third phase is connected to the first end WLG of the lower bridge arm, and the second end WLT of the lower bridge arm is connected to the positive drive terminal of the lower bridge arm of the third phase end.

According to the intelligent power module 300 of the embodiment of the present invention, the intelligent power module 300 includes: a high voltage input terminal P, a signal output terminal U of the upper bridge arm of the first phase, an output terminal V of the upper bridge arm signal of the second phase, and a third phase The signal output terminal W of the upper bridge arm, the signal output terminal Nu of the lower bridge arm of the first phase, the signal output terminal Nv of the lower bridge arm of the second phase and the signal output terminal Nw of the lower bridge arm of the third phase, and the first terminal of the upper bridge arm electrically connected WHG and the second terminal WHT of the upper bridge arm, and the first terminal WLG of the lower bridge arm electrically connected with the second terminal WLT of the lower bridge arm; the integrated control circuit 301 of the upper bridge arm is provided with the positive drive terminal OUT of the upper bridge arm of the first phase (UH), the positive drive terminal OUT(VH) of the upper bridge arm of the second phase and the positive drive terminal OUT(WH) of the upper bridge arm of the third phase, and the negative drive terminal UVS of the upper bridge arm of the first phase, the upper bridge arm of the second phase The bridge arm negative drive terminal VVS and the third phase upper bridge arm negative drive terminal WVS; the first phase upper bridge arm IGBT321, the base of the first phase upper bridge arm IGBT321 is connected to the first phase upper bridge arm positive drive Terminal OUT (UH), the collector of the first phase upper bridge arm IGBT321 is connected to the high voltage input terminal P, and the emitter of the first phase upper bridge arm IGBT321 is simultaneously connected to the first phase upper bridge arm The negative drive terminal UVS and the first phase upper bridge arm signal output terminal U; the second phase upper bridge arm IGBT322, the base of the second phase upper bridge arm IGBT322 is connected to the second phase upper bridge arm positive drive terminal OUT (VH), the collector of the second phase upper bridge arm IGBT322 is connected to the high voltage input terminal P, and the emitter of the second phase upper bridge arm IGBT322 is simultaneously connected to the second phase upper bridge arm The negative drive terminal VVS and the signal output terminal V of the upper bridge arm of the second phase; the upper bridge arm IGBT323 of the third phase, the collector of the upper bridge arm IGBT323 of the third phase is connected to the high voltage input terminal P, the first The emitter of the three-phase upper bridge arm IGBT323 is simultaneously connected to the negative drive terminal WVS of the upper bridge arm of the third phase and the signal output end W of the upper bridge arm of the third phase; the integrated control circuit 302 of the lower bridge arm is provided with a first The positive drive terminal OUT(UL) of the lower bridge arm of the phase, the positive drive terminal OUT(VL) of the lower bridge arm of the second phase, the positive drive terminal OUT(WL) of the lower bridge arm of the third phase, and the negative pole of the lower bridge arm of the first phase driving end, the negative driving end of the lower bridge arm of the second phase, and the negative driving end of the lower bridge arm of the third phase; The base of the arm IGBT324 is connected to the positive drive terminal OUT (UL) of the lower bridge arm of the first phase, and the collector of the lower bridge arm IGBT324 of the first phase is connected to the high voltage input terminal P. The emitter of the bridge arm IGBT324 is simultaneously connected to the negative drive terminal of the lower bridge arm of the first phase and the signal output terminal Nu of the lower bridge arm of the first phase; the second phase symmetrically arranged with the upper bridge arm IGBT322 of the second phase The lower bridge arm IGBT325, the base of the second phase lower bridge arm IGBT325 is connected to the positive drive terminal OUT (VL) of the second phase lower bridge arm IGBT325, the collector of the second phase lower bridge arm IGBT325 is connected to the The high-voltage input terminal P, the emitter of the second phase lower bridge arm IGBT325 is simultaneously connected to the second phase lower bridge arm negative drive terminal and the second phase lower bridge arm signal output terminal Nv; and the second phase lower bridge arm signal output terminal Nv; The three-phase upper bridge arm IGBT323 is symmetrically arranged with the third phase lower bridge arm IGBT326, the collector of the third phase lower bridge arm IGBT326 is connected to the high voltage input terminal P, and the emitter of the third phase lower bridge arm IGBT326 It is simultaneously connected to the negative drive terminal of the lower bridge arm of the third phase and the signal output terminal Nw of the lower bridge arm of the third phase.

By setting the base of the upper bridge arm IGBT323 of the third phase to be connected to the first terminal WHG of the upper bridge arm, and the second terminal WHT of the upper bridge arm to be connected to the positive drive terminal OUT(WH) of the upper bridge arm of the third phase, the first terminal of the upper bridge arm The terminal WHG is electrically connected to the positive drive terminal OUT (UH) of the upper bridge arm of the first phase. Therefore, the base of the upper bridge arm IGBT323 of the third phase is indirectly connected to the positive drive terminal OUT (UH) of the upper bridge arm of the first phase. ), similarly, the base of the lower bridge arm IGBT326 of the third phase is connected to the first terminal WLG of the lower bridge arm, and the second terminal WLT of the lower bridge arm is connected to the positive drive terminal OUT(WL) of the lower bridge arm of the third phase, That is, the base of the lower bridge arm IGBT326 of the third phase is indirectly connected to the positive drive terminal OUT (UL) of the lower bridge arm of the first phase, which can control the upper bridge arm IGBT323 of the third phase and the lower bridge arm IGBT326 of the third phase to be in a linear state. region or saturation region, so that the junction-to-case thermal resistance and power cycle of the IGBT can be more comprehensively characterized.

Wherein, combined with the intelligent power module 300 of the prior art, the third-phase upper bridge arm IGBT323 is a W-phase upper bridge arm IGBT located in the middle area of the intelligent power module 300, and the third-phase lower bridge arm IGBT326 is a W-phase lower bridge arm The arm IGBT is located in the edge area of the intelligent power module 300. Therefore, by detecting the thermal characteristics of the third phase upper arm IGBT323 and the third phase lower arm IGBT326, the thermal distribution of the intelligent power module 300 can be accurately reflected. .

In addition, the upper bridge arm IGBT and the lower bridge arm IGBT of any corresponding group are not turned on at the same time, the upper bridge arm IGBT and the lower bridge arm IGBT of the intelligent power module 300 of the present application adopt a symmetrical design, therefore, it is convenient to control the upper bridge arm IGBT And the on-off state of the lower bridge arm IGBT.

The intelligent power module 300 according to the above-mentioned embodiments of the present invention may also have the following technical features:

Preferably, the integrated control circuit 301 of the upper bridge arm and the integrated control circuit 302 of the lower bridge arm alternately output driving signals to respectively drive the upper bridge arm IGBT321 of the first phase, the upper bridge arm IGBT322 of the second phase and the upper bridge arm IGBT323 of the third phase. turn on, or drive the first phase lower bridge arm IGBT324, the second phase lower bridge arm IGBT325 and the third phase lower bridge arm IGBT326 to conduct.

Preferably, it also includes: a first upper bridge arm fast recovery diode 311, the anode of the first upper bridge arm fast recovery diode 311 is connected to the emitter of the first phase upper bridge arm IGBT321, the first upper bridge arm fast recovery diode 311 The cathode is connected to the collector of the upper bridge arm IGBT321 of the first phase.

Preferably, it also includes: a second upper bridge arm fast recovery diode 312, the anode of the second upper bridge arm fast recovery diode 312 is connected to the emitter of the second phase upper bridge arm IGBT322, the second upper bridge arm fast recovery diode 312 The cathode is connected to the collector of the second phase upper arm IGBT322.

Preferably, it also includes: a third upper bridge arm fast recovery diode 313, the anode of the third upper bridge arm fast recovery diode 313 is connected to the emitter of the third phase upper bridge arm IGBT323, the third upper bridge arm fast recovery diode 313 The cathode is connected to the collector of the third phase upper arm IGBT323.

Preferably, it also includes: a first lower bridge arm fast recovery diode 314, the anode of the first lower bridge arm fast recovery diode 314 is connected to the emitter of the first phase lower bridge arm IGBT324, the first lower bridge arm fast recovery diode 314 The cathode is connected to the collector of the lower bridge arm IGBT324 of the first phase.

Preferably, it also includes: a second lower bridge arm fast recovery diode 315, the anode of the second lower bridge arm fast recovery diode 315 is connected to the emitter of the second phase lower bridge arm IGBT325, the second lower bridge arm fast recovery diode 315 The cathode is connected to the collector of the second phase lower bridge arm IGBT325.

Preferably, it also includes: the third lower bridge arm fast recovery diode 315, the anode of the third lower bridge arm fast recovery diode 315 is connected to the emitter of the third phase lower bridge arm IGBT326, the third lower bridge arm fast recovery diode 315 The cathode is connected to the collector of the third phase lower bridge arm IGBT326.

The functions of pins not mentioned in Figure 6 to Figure 8 are the same as those in Figure 1 to Figure 5. In addition, in the peripheral test circuit shown in Figure 6, the second terminal WHT of the upper bridge arm is connected to the signal of the upper bridge arm of the third phase Between the output terminals W, between the second terminal WLT of the lower bridge arm and the signal output terminal Nw of the lower bridge arm of the third phase, the second voltage stabilizing component D2 is connected, and the first voltage stabilizing component D1 and the second voltage stabilizing component D1 are additionally arranged. Component D2 is connected in series to improve circuit reliability.

The technical solution of the present invention has been described in detail above in conjunction with the accompanying drawings. Considering how to improve the reliability and accuracy of thermal analysis of intelligent power modules proposed in related technologies, the present invention proposes an intelligent power module. By setting the third phase The base of the upper bridge arm IGBT is connected to the first end of the upper bridge arm, and the second end of the upper bridge arm is connected to the positive drive terminal OUT(WH) of the upper bridge arm of the third phase, and the first end of the upper bridge arm is connected to the upper bridge arm of the first phase. The arm positive drive terminal OUT (UH) is electrically connected, therefore, the base of the upper bridge arm IGBT of the third phase is indirectly connected to the positive drive terminal OUT (UH) of the upper bridge arm of the first phase, similarly, through the third phase The base of the lower bridge arm IGBT of the phase is connected to the first end of the lower bridge arm, and the second end of the lower bridge arm is connected to the positive drive terminal OUT (WL) of the lower bridge arm of the third phase, that is, the lower bridge arm IGBT of the third phase The base is indirectly connected to the positive drive terminal OUT (UL) of the lower bridge arm of the first phase, which can control the upper bridge arm IGBT of the third phase and the lower bridge arm IGBT of the third phase to be in the linear region or the saturation region, so that the IGBT can be controlled Junction-to-case thermal resistance and power cycling are more comprehensively characterized.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims (10)

1. An intelligent power module, the intelligent power module comprising: High voltage input terminal, first phase upper bridge arm signal output terminal, second phase upper bridge arm signal output terminal and third phase upper bridge arm signal output terminal, first phase lower bridge arm signal output terminal, second phase lower bridge arm signal output terminal The signal output terminal and the signal output terminal of the lower bridge arm of the third phase, the first end of the upper bridge arm electrically connected to the second end of the upper bridge arm, and the first end of the lower bridge arm electrically connected to the second end of the lower bridge arm; The integrated control circuit of the upper bridge arm is provided with the positive driving end of the upper bridge arm of the first phase, the positive driving end of the upper bridge arm of the second phase and the positive driving end of the upper bridge arm of the third phase, and the negative driving end of the upper bridge arm of the first phase terminal, the negative driving terminal of the upper bridge arm of the second phase and the negative driving terminal of the upper bridge arm of the third phase; The first phase upper bridge arm IGBT, the base of the first phase upper bridge arm IGBT is connected to the positive drive end of the first phase upper bridge arm IGBT, the collector of the first phase upper bridge arm IGBT is connected to the a high-voltage input terminal, the emitter of the first phase upper bridge arm IGBT is simultaneously connected to the first phase upper bridge arm negative drive terminal and the first phase upper bridge arm signal output terminal; The upper bridge arm IGBT of the second phase, the base of the upper bridge arm IGBT of the second phase is connected to the positive drive terminal of the upper bridge arm of the second phase, and the collector of the upper bridge arm IGBT of the second phase is connected to the a high-voltage input terminal, the emitter of the second phase upper bridge arm IGBT is simultaneously connected to the second phase upper bridge arm negative drive terminal and the second phase upper bridge arm signal output terminal; The upper bridge arm IGBT of the third phase, the collector of the upper bridge arm IGBT of the third phase is connected to the high voltage input terminal, and the emitter of the upper bridge arm IGBT of the third phase is connected to the upper bridge arm of the third phase at the same time arm negative drive end and the signal output end of the third phase upper bridge arm; The lower bridge arm integrated control circuit is provided with the first phase lower bridge arm positive drive end, the second phase lower bridge arm positive drive end and the third phase lower bridge arm positive drive end, and the first phase lower bridge arm negative drive end terminal, the negative driving terminal of the lower bridge arm of the second phase and the negative driving terminal of the lower bridge arm of the third phase; The first phase lower bridge arm IGBT arranged symmetrically with the first phase upper bridge arm IGBT, the base of the first phase lower bridge arm IGBT is connected to the positive drive terminal of the first phase lower bridge arm, the first phase The collector of the lower bridge arm IGBT of one phase is connected to the high-voltage input terminal, and the emitter of the lower bridge arm IGBT of the first phase is simultaneously connected to the negative drive terminal of the lower bridge arm of the first phase and the lower bridge arm of the first phase. Bridge arm signal output terminal; A second phase lower bridge arm IGBT arranged symmetrically to the second phase upper bridge arm IGBT, the base of the second phase lower bridge arm IGBT is connected to the positive drive end of the second phase lower bridge arm IGBT, the first phase The collector of the two-phase lower bridge arm IGBT is connected to the high-voltage input terminal, and the emitter of the second-phase lower bridge arm IGBT is simultaneously connected to the negative drive terminal of the second-phase lower bridge arm and the second-phase lower bridge arm negative drive terminal. Bridge arm signal output terminal; a third phase lower bridge arm IGBT arranged symmetrically with the third phase upper bridge arm IGBT, the collector of the third phase lower bridge arm IGBT is connected to the high voltage input terminal, and the third phase lower bridge arm IGBT The emitter of the lower bridge arm of the third phase is simultaneously connected to the negative drive end of the lower bridge arm of the third phase and the signal output end of the lower bridge arm of the third phase, It is characterized in that the intelligent power module also includes: The base of the upper bridge arm IGBT of the third phase is connected to the first end of the upper bridge arm, and the second end of the upper bridge arm is connected to the positive drive end of the third phase upper bridge arm; The base of the third phase lower bridge arm IGBT is connected to the first end of the lower bridge arm, and the second end of the lower bridge arm is connected to the positive drive end of the third phase lower bridge arm. 2. The intelligent power module according to claim 1, characterized in that, The integrated control circuit of the upper bridge arm and the integrated control circuit of the lower bridge arm alternately output driving signals to respectively drive the upper bridge arm IGBT of the first phase, the upper bridge arm IGBT of the second phase and the third phase The upper bridge arm IGBT is turned on, or the first phase lower bridge arm IGBT, the second phase lower bridge arm IGBT and the third phase lower bridge arm IGBT are driven to be turned on. 3. The intelligent power module according to claim 1 or 2, further comprising: The first upper bridge arm fast recovery diode, the anode of the first upper bridge arm fast recovery diode is connected to the emitter of the first phase upper bridge arm IGBT, and the cathode of the first upper bridge arm fast recovery diode is connected to The collector of the upper bridge arm IGBT of the first phase. 4. The intelligent power module according to claim 1 or 2, further comprising: The second upper bridge arm fast recovery diode, the anode of the second upper bridge arm fast recovery diode is connected to the emitter of the second phase upper bridge arm IGBT, and the cathode of the second upper bridge arm fast recovery diode is connected to The collector of the upper bridge arm IGBT of the second phase. 5. The intelligent power module according to claim 1 or 2, further comprising: The third upper bridge arm fast recovery diode, the anode of the third upper bridge arm fast recovery diode is connected to the emitter of the third phase upper bridge arm IGBT, and the cathode of the third upper bridge arm fast recovery diode is connected to The collector of the upper bridge arm IGBT of the third phase. 6. The intelligent power module according to claim 1 or 2, further comprising: The fast recovery diode of the first lower bridge arm, the anode of the fast recovery diode of the first lower bridge arm is connected to the emitter of the first phase lower bridge arm IGBT, and the cathode of the fast recovery diode of the first lower bridge arm is connected to The collector of the lower bridge arm IGBT of the first phase. 7. The intelligent power module according to claim 1 or 2, further comprising: The second lower bridge arm fast recovery diode, the anode of the second lower bridge arm fast recovery diode is connected to the emitter of the second phase lower bridge arm IGBT, and the cathode of the second lower bridge arm fast recovery diode is connected to The collector of the lower bridge arm IGBT of the second phase. 8. The intelligent power module according to claim 1 or 2, further comprising: The third lower bridge arm fast recovery diode, the anode of the third lower bridge arm fast recovery diode is connected to the emitter of the third phase lower bridge arm IGBT, and the cathode of the third lower bridge arm fast recovery diode is connected to The collector of the lower bridge arm IGBT of the third phase. 9. A power electronic device, comprising the intelligent power module according to any one of claims 1-8. 10. The power electronic device according to claim 9, characterized in that, The power electronic device is an air conditioner.

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