CN106505834B - Intelligent power module - Google Patents

Intelligent power module Download PDF

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Publication number
CN106505834B
CN106505834B CN201611132339.2A CN201611132339A CN106505834B CN 106505834 B CN106505834 B CN 106505834B CN 201611132339 A CN201611132339 A CN 201611132339A CN 106505834 B CN106505834 B CN 106505834B
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bridge arm
phase
upper bridge
igbt
lower bridge
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CN106505834A (en
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梁海星
冯宇翔
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GD Midea Air Conditioning Equipment Co Ltd
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GD Midea Air Conditioning Equipment Co Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention provides an intelligent power module. The intelligent power module is characterized in that a base electrode of a third-phase upper bridge arm IGBT is connected to a first end of an upper bridge arm, and a second end of the upper bridge arm is connected to a positive electrode driving end of the third-phase upper bridge arm; and a base electrode of a third-phase lower bridge arm IGBT is connected to a first end of a lower bridge arm, and a second end of the lower bridge arm is connected to a positive electrode driving end of the third-phase lower bridge arm. Through the technical scheme of the invention, the thermal characteristics of the IGBTs in a linear region can be accurately detected, and thus flexible thermal analysis of the IGBTs can be realized.

Description

Intelligent power module
Technical Field
The invention relates to the technical field of intelligent power modules, in particular to an intelligent power module.
Background
An Intelligent Power Module (IPM) is a Power Driver IC (Driver IC) that combines Power electronics and Integrated Circuit technology. The intelligent power module gains a bigger and bigger market due to the advantages of high integration level, high reliability and the like, is particularly suitable for frequency converters of driving motors and various inverter power supplies, and is a common power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable-frequency household appliances.
The circuit structure of the conventional smart power module 100 is shown in fig. 1:
an HVIC (High Voltage integrated circuit, high-Voltage integrated control circuit) tube 101 serves as a positive terminal VCC (H) of the low-Voltage power supply of the intelligent power module 100, where VCC (H) is generally 15V;
a VCC terminal of a LVIC (Low Voltage integrated circuit) tube 102 is used as a positive terminal VCC (L) of a Low Voltage power supply of the smart power module 100, where VCC (L) is generally 15V;
an IN (UH) end of the HVIC tube 101 serves as an input end UHIN of a U-phase upper bridge arm of the intelligent power module 100;
the IN (VH) end of the HVIC tube 101 is used as the intelligence an input end VHIN of a V-phase upper bridge arm of the power module 100;
an IN (WH) end of the HVIC tube 101 serves as a W-phase upper arm input end WHIN of the intelligent power module 100;
the IN (UL) end of the LVIC tube 102 serves as the U-phase lower bridge arm input end ULIN of the intelligent power module 100;
the IN (VL) end of the LVIC tube 102 serves as the V-phase lower bridge arm input terminal VLIN of the intelligent power module 100;
the IN (WL) end of the LVIC tube 102 serves as the W-phase lower arm input end WLIN of the intelligent power module 100;
here, the U, V, W three-phase six-way input of the smart power module 100 receives input signals of 0 to 5V;
the COM end of the HVIC pipe 101 is connected with the COM end of the LVIC pipe 102;
the COM end of the LVIC tube 102 is used as the negative end COM of the low voltage power supply of the intelligent power module 100;
the UVB terminal of the HVIC tube 101 is used as the U-phase high-voltage region power supply positive terminal VB (U) of the intelligent power module 100;
the OUT (UH) end of the HVIC tube 101 is connected with the grid electrode of the U-phase upper bridge arm IGBT tube 121;
the UVS end of the HVIC tube 101 is connected to the emitter of the IGBT tube 121, the anode of the FRD tube 111, the collector of the U-phase lower arm IGBT tube 124, and the cathode of the FRD tube 114, and serves as the negative end U of the U-phase high voltage area power supply of the intelligent power module 100;
VVB terminal of the HVIC tube 101 is used as the intelligent power a U-phase high-voltage region power supply positive terminal VB (V) of the module 100;
the OUT (VH) end of the HVIC transistor 101 is connected to the gate of the V-phase upper arm IGBT transistor 123;
the VVS end of the HVIC tube 101 is connected to the emitter of the IGBT tube 122, the anode of the FRD tube 112, the collector of the V-phase lower arm IGBT tube 125, and the cathode of the FRD tube 115, and serves as the negative end V of the W-phase high voltage area power supply of the intelligent power module 100;
the WVB terminal of the HVIC tube 101 serves as the positive terminal VB (W) of the W-phase high-voltage power supply of the intelligent power module 100;
the OUT (WH) end of the HVIC transistor 101 is connected to the gate of the W-phase upper arm IGBT transistor 123;
the WVS end of the HVIC tube 101 is connected to the emitter of the IGBT tube 123, the anode of the FRD tube 113, the collector of the W-phase lower bridge arm IGBT tube 126, and the cathode of the FRD tube 116, and serves as the negative end W of the W-phase high voltage area power supply of the intelligent power module 100;
the OUT (UL) terminal of the LVIC transistor 102 is connected to the gate of the IGBT transistor 124;
the OUT (VL) terminal of the LVIC transistor 102 is connected to the gate of the IGBT transistor 125;
the OUT (WL) terminal of the LVIC transistor 102 is connected to the gate of the IGBT transistor 126;
an emitter of the IGBT tube 124 is connected to an anode of the FRD tube 114, and serves as a U-phase low-voltage reference terminal NU of the intelligent power module 100;
an emitter of the IGBT tube 125 is connected to an anode of the FRD tube 115, and serves as a V-phase low-voltage reference terminal NV of the intelligent power module 100;
an emitter of the IGBT tube 126 is connected to an anode of the FRD tube 116, and serves as a W-phase low-voltage reference terminal NW of the intelligent power module 100;
the collector of the IGBT tube 121, the cathode of the FRD tube 111, the collector of the IGBT tube 122, the cathode of the FRD tube 112, the collector of the IGBT tube 123, and the cathode of the FRD tube 113 are connected to each other, and serve as a high voltage input terminal P of the smart power module 100, where P is generally connected to 300V.
The HVIC tube 101 described above functions as:
the logic signals of 0-5V of input ends IN (UH), IN (VH) and IN (WH) are respectively transmitted to output ends OUT (UH), OUT (VH) and OUT (WH), wherein OUT (UH), OUT (VH) and OUT (WH) are the logic signals of VS-VS + 15V.
The LVIC tube 101 described above functions as:
the logic signals of 0-5V at the input ends IN (UL), IN (VL) and IN (WL) are transmitted to the output ends OUT (UL), OUT (VL) and OUT (WL), and the logical signals of 0-15V are transmitted to the output ends OUT (UL), OUT (VL) and OUT (WL).
Fig. 2 shows the structure of a conventional smart power module 100.
The above-described smart power module 100 has a structure, it includes: a circuit substrate 206; the circuit wiring 208 formed on the insulating layer 207 provided on the surface of the circuit board 206; components such as the IGBT tubes 121 to 126, the FRD tubes 111 to 116, and the HVIC tube 101 fixed to the circuit wiring 208; a metal line 205 connecting a component and the circuit wiring 208; a pin 201 connected to the circuit wiring 208; at least one surface of the circuit board 206 is sealed with a sealing resin 202, and the circuit board 206 is entirely sealed to improve sealing performance, and the rear surface of the aluminum substrate 206 is sealed in a state exposed to the outside to improve heat dissipation.
The thermal analysis process of the smart power module of the related art will be described with reference to fig. 3 to 5.
As shown in fig. 3, the IGBT is a device under test, the IGBT collector is connected to the positive electrode of a test current Im for measuring the temperature of the IGBT under test, and is connected to the positive pole of the heating current Ih via a switch S. Ih. And the negative electrode of Im is connected with the IGBT emitter and grounded. The circuit is a Gate Driver circuit (i.e., gate Driver) of the IGBT. In the test process, the voltmeter is used for measuring the whole IGBT voltage drop.
As shown in fig. 4, the above circuit is replaced by the HVIC101 or LVIC102 in the smart power module 100. Fig. 5 shows the gate voltage and emitter voltage Vge of the IGBT according to the input/output properties of the HVIC or LVIC.
As can be seen from fig. 5, the 6 IGBT transistors of the conventional intelligent power module are controlled by the HVIC transistor or the LVIC transistor. And, HVIC pipe or LVIC pipe is single to the controllability of gate voltage. The operating voltage of the HVIC tube or the LVIC tube is 10-20V, and the recommended operating voltage is 15V. When the working voltage is lower than 10V, the HVIC tube or the LVIC tube does not work, the Vge output is 0, the IGBT is turned off, when the working voltage is 10-20V, the HVIC tube or the LVIC tube outputs power supply input voltage, and the IGBT is in a saturation region. Therefore, the IGBT can only be in a judgment or saturation state under the control of the HVIC tube or the LVIC tube.
In addition, the resistance value of the IGBT in the saturation region is different from that in the linear region, and since the resistance value is directly related to the heat conduction property of silicon, therefore, the smart power module 100 can only study the thermal conductivity of the IGBT in the saturation region, but cannot measure the properties of the IGBT in the linear region, and there is not a comprehensive thermal characteristic study for the IGBT.
In addition, the power cycle test is an important method for testing the service life of the intelligent power module, and is also a research method for analyzing thermal failure. The IGBT is in a saturation region, and the fatigue of a metal wire welding point is easy to characterize in a power cycle test; when the IGBT is in the linear region, the fatigue characteristics of the power chip and the materials below the power chip are easily exhibited in the power cycle test. Therefore, the power cycle characterization of the smart power module 100 described above reflects in large part the life of the metal solder joints and does not fully reflect the thermal reliability of the module.
Based on the above considerations, in the above-described smart power module 100, the IGBT driving circuit is composed of HVIC tubes or LVIC tubes, lack of flexibility in thermal characterization does not provide a good thermal assessment of the reliability of the smart power module 100.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art or the related art.
To this end, it is an object of the invention to propose an intelligent power module.
To achieve the above object, according to an embodiment of a first aspect of the present invention, there is provided a smart power module, including: the base electrode of the third phase upper bridge arm IGBT is connected to the first end of the upper bridge arm, and the second end of the upper bridge arm is connected to the positive electrode driving end of the third phase upper bridge arm; the base of the third-phase lower bridge arm IGBT is connected to the first end of the lower bridge arm, and the second end of the lower bridge arm is connected to the positive driving end of the third-phase lower bridge arm.
According to an embodiment of the invention, a smart power module comprises: the high-voltage power supply comprises a high-voltage input end, a first-phase upper bridge arm signal output end, a second-phase upper bridge arm signal output end, a third-phase upper bridge arm signal output end, a first-phase lower bridge arm signal output end, a second-phase lower bridge arm signal output end, a third-phase lower bridge arm signal output end, an upper bridge arm first end, an upper bridge arm second end and a lower bridge arm first end and a lower bridge arm second end, wherein the upper bridge arm first end and the lower bridge arm second end are electrically connected; the upper bridge arm integrated control circuit is provided with a first-phase upper bridge arm positive electrode driving end, a second-phase upper bridge arm positive electrode driving end, a third-phase upper bridge arm positive electrode driving end, a first-phase upper bridge arm negative electrode driving end, a second-phase upper bridge arm negative electrode driving end and a third-phase upper bridge arm negative electrode driving end; a base electrode of the first-phase upper bridge arm IGBT is connected to the first-phase upper bridge arm positive electrode driving end, a collector electrode of the first-phase upper bridge arm IGBT is connected to the high-voltage input end, and an emitter electrode of the first-phase upper bridge arm IGBT is simultaneously connected to the first-phase upper bridge arm negative electrode driving end and the first-phase upper bridge arm signal output end; a base electrode of the second phase upper bridge arm IGBT is connected to the positive electrode driving end of the second phase upper bridge arm, a collector electrode of the second phase upper bridge arm IGBT is connected to the high-voltage input end, and an emitter electrode of the second phase upper bridge arm IGBT is simultaneously connected to the negative electrode driving end of the second phase upper bridge arm and the signal output end of the second phase upper bridge arm; a collector of the third upper bridge arm IGBT is connected to the high-voltage input end, and an emitter of the third upper bridge arm IGBT is simultaneously connected to the negative electrode driving end of the third upper bridge arm and the signal output end of the third upper bridge arm; the lower bridge arm integrated control circuit is provided with a first-phase lower bridge arm positive electrode driving end, a second-phase lower bridge arm positive electrode driving end, a third-phase lower bridge arm positive electrode driving end, a first-phase lower bridge arm negative electrode driving end, a second-phase lower bridge arm negative electrode driving end and a third-phase lower bridge arm negative electrode driving end; the first-phase upper bridge arm IGBT is symmetrically arranged on the first-phase lower bridge arm IGBT, a base electrode of the first-phase lower bridge arm IGBT is connected to a positive electrode driving end of the first-phase lower bridge arm, a collector electrode of the first-phase lower bridge arm IGBT is connected to the high-voltage input end, and an emitter electrode of the first-phase lower bridge arm IGBT is simultaneously connected to a negative electrode driving end of the first-phase lower bridge arm and a signal output end of the first-phase lower bridge arm; the base electrode of the second-phase lower bridge arm IGBT is connected to the positive electrode driving end of the second-phase lower bridge arm, the collector electrode of the second-phase lower bridge arm IGBT is connected to the high-voltage input end, and the emitter electrode of the second-phase lower bridge arm IGBT is simultaneously connected to the negative electrode driving end of the second-phase lower bridge arm and the signal output end of the second-phase lower bridge arm; and the third-phase lower bridge arm IGBT is symmetrically arranged with the third-phase upper bridge arm IGBT, a collector of the third-phase lower bridge arm IGBT is connected to the high-voltage input end, and an emitter of the third-phase lower bridge arm IGBT is simultaneously connected to the negative electrode driving end of the third-phase lower bridge arm and the signal output end of the third-phase lower bridge arm.
The base of the third-phase upper bridge arm IGBT is connected to the first end of the upper bridge arm, the second end of the upper bridge arm is connected to the positive driving end of the third-phase upper bridge arm, and the first end of the upper bridge arm is electrically connected with the positive driving end of the first-phase upper bridge arm, so that the base of the third-phase upper bridge arm IGBT is indirectly connected to the positive driving end of the first-phase upper bridge arm.
In combination with the intelligent power module in the prior art, the third-phase upper bridge arm IGBT is a W-phase upper bridge arm IGBT and is located in the middle area of the intelligent power module, and the third-phase lower bridge arm IGBT is a W-phase lower bridge arm IGBT and is located in the edge area of the intelligent power module.
In addition, the upper bridge arm IGBT and the lower bridge arm IGBT of any one corresponding group are not started at the same time, and the upper bridge arm IGBT and the lower bridge arm IGBT of the intelligent power module are symmetrically designed, so that the on-off state of the upper bridge arm IGBT and the lower bridge arm IGBT can be conveniently controlled.
The intelligent power module according to the above embodiment of the present invention may further have the following technical features:
preferably, the upper bridge arm integrated control circuit and the lower bridge arm integrated control circuit alternately output driving signals to respectively drive the first-phase upper bridge arm IGBT, the second-phase upper bridge arm IGBT and the third-phase upper bridge arm IGBT to be conducted, or drive the first-phase lower bridge arm IGBT, the second-phase lower bridge arm IGBT and the third-phase lower bridge arm IGBT to be conducted.
Preferably, the method further comprises the following steps: and the anode of the first upper bridge arm fast recovery diode is connected to the emitter of the first phase upper bridge arm IGBT, and the cathode of the first upper bridge arm fast recovery diode is connected to the collector of the first phase upper bridge arm IGBT.
Preferably, the method further comprises the following steps: and the anode of the second upper bridge arm fast recovery diode is connected to the emitter of the second phase upper bridge arm IGBT, and the cathode of the second upper bridge arm fast recovery diode is connected to the collector of the second phase upper bridge arm IGBT.
Preferably, the method further comprises the following steps: and the anode of the third upper bridge arm fast recovery diode is connected to the emitter of the third phase upper bridge arm IGBT, and the cathode of the third upper bridge arm fast recovery diode is connected to the collector of the third phase upper bridge arm IGBT.
Preferably, the method further comprises the following steps: and the anode of the first lower bridge arm fast recovery diode is connected to the emitter of the first phase lower bridge arm IGBT, and the cathode of the first lower bridge arm fast recovery diode is connected to the collector of the first phase lower bridge arm IGBT.
Preferably, the method further comprises the following steps: and the anode of the second lower bridge arm fast recovery diode is connected to the emitter of the second phase lower bridge arm IGBT, and the cathode of the second lower bridge arm fast recovery diode is connected to the collector of the second phase lower bridge arm IGBT.
Preferably, the method further comprises the following steps: and the anode of the third lower bridge arm fast recovery diode is connected to the emitter of the third phase lower bridge arm IGBT, and the cathode of the third lower bridge arm fast recovery diode is connected to the collector of the third phase lower bridge arm IGBT.
According to an embodiment of the second aspect of the present invention, a power electronic device is provided, which includes the intelligent power module according to the above-mentioned first aspect.
Preferably, the power electronics is an air conditioner.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 shows a schematic diagram of a prior art smart power module;
FIG. 2 illustrates a hardware circuit schematic of the smart power module shown in FIG. 1;
FIG. 3 illustrates a prior art test schematic for thermal analysis of smart power;
FIG. 4 shows a simplified schematic diagram of prior art thermal analysis of smart power;
FIG. 5 is a graph illustrating test results of thermal analysis of smart power in the prior art;
FIG. 6 shows a schematic diagram of a smart power module, according to an embodiment of the invention;
FIG. 7 illustrates a hardware circuit schematic of a smart power module according to an embodiment of the invention;
FIG. 8 illustrates a schematic diagram of a peripheral circuit for thermal analysis of a smart power module according to an embodiment of the present invention.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
Fig. 6 shows a schematic diagram of a smart power module according to an embodiment of the invention.
Fig. 7 shows a hardware circuit schematic of a smart power module according to an embodiment of the invention.
FIG. 8 illustrates a schematic diagram of a peripheral circuit for thermal analysis of a smart power module according to an embodiment of the present invention.
As shown in fig. 6 to 8, the smart power module 300 according to an embodiment of the present invention includes: the base electrode of the third phase upper bridge arm IGBT323 is connected to the first end WHG of the upper bridge arm, and the second end WHT of the upper bridge arm is connected to the positive electrode driving end of the third phase upper bridge arm; the base of the third phase lower leg IGBT326 is connected to the lower leg first end WLG, and the lower leg second end WLT is connected to the third phase lower leg positive drive end.
According to the smart power module 300 of an embodiment of the present invention, the smart power module 300 includes: the high-voltage bridge comprises a high-voltage input end P, a first-phase upper bridge arm signal output end U, a second-phase upper bridge arm signal output end V, a third-phase upper bridge arm signal output end W, a first-phase lower bridge arm signal output end Nu, a second-phase lower bridge arm signal output end Nv, a third-phase lower bridge arm signal output end Nw, an electrically connected upper bridge arm first end WHG, an electrically connected upper bridge arm second end WHT, and an electrically connected lower bridge arm first end WLG and an electrically connected lower bridge arm second end WLT; the upper bridge arm integrated control circuit 301 is provided with a first-phase upper bridge arm positive drive end OUT (UH), a second-phase upper bridge arm positive drive end OUT (VH) and a third-phase upper bridge arm positive drive end OUT (WH), and is also provided with a first-phase upper bridge arm negative drive end UVS, a second-phase upper bridge arm negative drive end VVS and a third-phase upper bridge arm negative drive end WVS; a first phase upper bridge arm IGBT321, a base of the first phase upper bridge arm IGBT321 is connected to the first phase upper bridge arm positive drive end OUT (UH), a collector of the first phase upper bridge arm IGBT321 is connected to the high voltage input end P, and an emitter of the first phase upper bridge arm IGBT321 is simultaneously connected to the first phase upper bridge arm negative drive end UVS and the first phase upper bridge arm signal output end U; a base of the second phase upper bridge arm IGBT322 is connected to the second phase upper bridge arm positive drive end OUT (VH), a collector of the second phase upper bridge arm IGBT322 is connected to the high-voltage input end P, and an emitter of the second phase upper bridge arm IGBT322 is simultaneously connected to the second phase upper bridge arm negative drive end VVS and the second phase upper bridge arm signal output end V; a collector of the third upper bridge arm IGBT323 is connected to the high-voltage input terminal P, and an emitter of the third upper bridge arm IGBT323 is connected to the third upper bridge arm negative drive terminal WVS and the third upper bridge arm signal output terminal W at the same time; the lower bridge arm integrated control circuit 302 is provided with a first-phase lower bridge arm positive electrode driving end OUT (UL), a second-phase lower bridge arm positive electrode driving end OUT (VL) and a third-phase lower bridge arm positive electrode driving end OUT (WL), and is provided with a first-phase lower bridge arm negative electrode driving end, a second-phase lower bridge arm negative electrode driving end and a third-phase lower bridge arm negative electrode driving end; the first-phase upper bridge arm IGBTs 321 are symmetrically arranged on the first-phase lower bridge arm IGBT324, a base of the first-phase lower bridge arm IGBT324 is connected to the first-phase lower bridge arm positive drive end OUT (UL), a collector of the first-phase lower bridge arm IGBT324 is connected to the high-voltage input end P, and an emitter of the first-phase lower bridge arm IGBT324 is simultaneously connected to the first-phase lower bridge arm negative drive end and the first-phase lower bridge arm signal output end Nu; the second-phase lower bridge arm IGBT325 is symmetrically arranged with the second-phase upper bridge arm IGBT322, the base electrode of the second-phase lower bridge arm IGBT325 is connected to the second-phase lower bridge arm positive electrode driving end OUT (VL), the collector electrode of the second-phase lower bridge arm IGBT325 is connected to the high-voltage input end P, and the emitter electrode of the second-phase lower bridge arm IGBT325 is simultaneously connected to the second-phase lower bridge arm negative electrode driving end and the second-phase lower bridge arm signal output end Nv; and the third-phase lower bridge arm IGBT326 is symmetrically arranged with the third-phase upper bridge arm IGBT323, a collector electrode of the third-phase lower bridge arm IGBT326 is connected to the high-voltage input end P, and an emitter electrode of the third-phase lower bridge arm IGBT326 is simultaneously connected to the negative electrode driving end of the third-phase lower bridge arm and the signal output end Nw of the third-phase lower bridge arm.
The base of the third-phase upper bridge arm IGBT323 is connected to the first end WHG of the upper bridge arm, the second end WHT of the upper bridge arm is connected to the positive driving end OUT (WH) of the third-phase upper bridge arm, the first end WHG of the upper bridge arm is electrically connected with the positive driving end OUT (UH) of the first-phase upper bridge arm, therefore, the base of the third-phase upper bridge arm IGBT323 is indirectly connected to the positive driving end OUT (UH) of the first-phase upper bridge arm, similarly, the base of the third-phase lower bridge arm IGBT326 is connected to the first end WLG of the lower bridge arm, the second end WLT of the lower bridge arm is connected to the positive driving end OUT (WL) of the third-phase lower bridge arm, namely the base of the third-phase lower bridge arm IGBT326 is indirectly connected to the positive driving end OUT (UL) of the first-phase lower bridge arm, the third-phase upper bridge arm IGBT323 and the third-phase lower bridge arm IGBT326 can be controlled to be in a linear region or a saturation region, and therefore shell-joint thermal resistance and power cycle of the IGBT can be represented comprehensively.
In combination with the intelligent power module 300 in the prior art, the third upper leg IGBT323 is a W-phase upper leg IGBT and is located in the middle region of the intelligent power module 300, and the third lower leg IGBT326 is a W-phase lower leg IGBT and is located in the edge region of the intelligent power module 300, so that the thermal distribution condition of the intelligent power module 300 can be reflected more accurately by detecting the thermal characteristic representation of the third upper leg IGBT323 and the third lower leg IGBT 326.
In addition, the upper arm IGBT and the lower arm IGBT of any one corresponding group are not turned on at the same time, and the upper arm IGBT and the lower arm IGBT of the intelligent power module 300 of the present application are designed symmetrically, so that it is convenient to control the on-off states of the upper arm IGBT and the lower arm IGBT.
The smart power module 300 according to the above embodiment of the present invention may further have the following technical features:
preferably, the upper arm integrated control circuit 301 and the lower arm integrated control circuit 302 alternately output driving signals to respectively drive the first phase upper arm IGBT321, the second phase upper arm IGBT322 and the third phase upper arm IGBT323 to be conducted, or drive the first phase lower arm IGBT324, the second phase lower arm IGBT325 and the third phase lower arm IGBT326 to be conducted.
Preferably, the method further comprises the following steps: and a first upper bridge arm fast recovery diode 311, wherein an anode of the first upper bridge arm fast recovery diode 311 is connected to an emitter of the first phase upper bridge arm IGBT321, and a cathode of the first upper bridge arm fast recovery diode 311 is connected to a collector of the first phase upper bridge arm IGBT 321.
Preferably, the method further comprises the following steps: and a second upper bridge arm fast recovery diode 312, an anode of the second upper bridge arm fast recovery diode 312 is connected to an emitter of the second phase upper bridge arm IGBT322, and a cathode of the second upper bridge arm fast recovery diode 312 is connected to a collector of the second phase upper bridge arm IGBT 322.
Preferably, the method further comprises the following steps: and an anode of the third upper arm fast recovery diode 313 is connected to an emitter of the third upper arm IGBT323, and a cathode of the third upper arm fast recovery diode 313 is connected to a collector of the third upper arm IGBT 323.
Preferably, the method further comprises the following steps: and a first lower bridge arm fast recovery diode 314, wherein an anode of the first lower bridge arm fast recovery diode 314 is connected to an emitter of the first phase lower bridge arm IGBT324, and a cathode of the first lower bridge arm fast recovery diode 314 is connected to a collector of the first phase lower bridge arm IGBT 324.
Preferably, the method further comprises the following steps: and an anode of the second lower leg fast recovery diode 315 is connected to an emitter of the second phase lower leg IGBT325, and a cathode of the second lower leg fast recovery diode 315 is connected to a collector of the second phase lower leg IGBT 325.
Preferably, the method further comprises the following steps: and an anode of the third lower leg fast recovery diode 315 is connected to an emitter of the third phase lower leg IGBT326, and a cathode of the third lower leg fast recovery diode 315 is connected to a collector of the third phase lower leg IGBT 326.
The function of the pins not mentioned in fig. 6 to 8 is the same as that in fig. 1 to 5, and in addition, in the peripheral test circuit shown in fig. 6, a second voltage stabilizing component D2 is connected between the second end WHT of the upper bridge arm and the signal output end W of the third upper bridge arm, and between the second end WLT of the lower bridge arm and the signal output end Nw of the third lower bridge arm, and a first voltage stabilizing component D1 and a second voltage stabilizing component D2 are additionally arranged to be connected in series, so as to improve the reliability of the circuit.
The technical scheme of the invention is described in detail above with reference to the accompanying drawings, and in consideration of how to improve the reliability and accuracy of thermal analysis of an intelligent power module proposed in the related art, the invention proposes an intelligent power module, by arranging that the base of the third phase upper bridge arm IGBT is connected to the first end of the upper bridge arm, and the second end of the upper bridge arm is connected to the positive driving end OUT (WH) of the third phase upper bridge arm, the first end of the upper bridge arm is electrically connected to the positive driving end OUT (UH) of the first phase upper bridge arm, therefore, the base of the third-phase upper bridge arm IGBT is indirectly connected to the positive driving end OUT (UH) of the first-phase upper bridge arm, similarly, the base of the third-phase lower bridge arm IGBT is connected to the first end of the lower bridge arm, the second end of the lower bridge arm is connected to the positive driving end OUT (WL) of the third-phase lower bridge arm, namely the base of the third-phase lower bridge arm IGBT is indirectly connected to the positive driving end OUT (UL) of the first-phase lower bridge arm, and the third-phase upper bridge arm IGBT and the third-phase lower bridge arm IGBT can be controlled to be in a linear region or a saturation region, so that the junction thermal resistance and the power cycle of the IGBT can be comprehensively characterized.
The foregoing is illustrative of the preferred embodiments of the present invention, and is not to be construed as limiting thereof, various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A smart power module, the smart power module comprising:
the high-voltage power supply comprises a high-voltage input end, a first-phase upper bridge arm signal output end, a second-phase upper bridge arm signal output end, a third-phase upper bridge arm signal output end, a first-phase lower bridge arm signal output end, a second-phase lower bridge arm signal output end, a third-phase lower bridge arm signal output end, an upper bridge arm first end, an upper bridge arm second end and a lower bridge arm first end and a lower bridge arm second end, wherein the upper bridge arm first end and the lower bridge arm second end are electrically connected;
the upper bridge arm integrated control circuit is provided with a first-phase upper bridge arm positive electrode driving end, a second-phase upper bridge arm positive electrode driving end, a third-phase upper bridge arm positive electrode driving end, a first-phase upper bridge arm negative electrode driving end, a second-phase upper bridge arm negative electrode driving end and a third-phase upper bridge arm negative electrode driving end;
a base electrode of the first-phase upper bridge arm IGBT is connected to the first-phase upper bridge arm positive electrode driving end, a collector electrode of the first-phase upper bridge arm IGBT is connected to the high-voltage input end, and an emitter electrode of the first-phase upper bridge arm IGBT is simultaneously connected to the first-phase upper bridge arm negative electrode driving end and the first-phase upper bridge arm signal output end;
a base electrode of the second phase upper bridge arm IGBT is connected to the positive electrode driving end of the second phase upper bridge arm, a collector electrode of the second phase upper bridge arm IGBT is connected to the high-voltage input end, and an emitter electrode of the second phase upper bridge arm IGBT is simultaneously connected to the negative electrode driving end of the second phase upper bridge arm and the signal output end of the second phase upper bridge arm;
a third phase upper bridge arm IGBT, the collector of which is connected to the high voltage input terminal, the emitter of the third-phase upper bridge arm IGBT is connected to the negative electrode driving end of the third-phase upper bridge arm and the signal output end of the third-phase upper bridge arm at the same time;
the lower bridge arm integrated control circuit is provided with a first-phase lower bridge arm positive electrode driving end, a second-phase lower bridge arm positive electrode driving end and a third-phase lower bridge arm positive electrode driving end, the negative electrode driving end of the first-phase lower bridge arm, the negative electrode driving end of the second-phase lower bridge arm and the negative electrode driving end of the third-phase lower bridge arm are arranged;
the first-phase lower bridge arm IGBT is symmetrically arranged with the first-phase upper bridge arm IGBT, a base electrode of the first-phase lower bridge arm IGBT is connected to the first-phase lower bridge arm positive electrode driving end, a collector electrode of the first-phase lower bridge arm IGBT is connected to the high-voltage input end, and an emitter electrode of the first-phase lower bridge arm IGBT is simultaneously connected to the first-phase lower bridge arm negative electrode driving end and the first-phase lower bridge arm signal output end;
the base electrode of the second-phase lower bridge arm IGBT is connected to the positive electrode driving end of the second-phase lower bridge arm, the collector electrode of the second-phase lower bridge arm IGBT is connected to the high-voltage input end, and the emitter electrode of the second-phase lower bridge arm IGBT is simultaneously connected to the negative electrode driving end of the second-phase lower bridge arm and the signal output end of the second-phase lower bridge arm;
a third-phase lower bridge arm IGBT symmetrically arranged with the third-phase upper bridge arm IGBT, wherein a collector of the third-phase lower bridge arm IGBT is connected to the high-voltage input end, an emitter of the third-phase lower bridge arm IGBT is simultaneously connected to the negative electrode driving end of the third-phase lower bridge arm and the signal output end of the third-phase lower bridge arm,
characterized in that, the intelligent power module still includes:
the base electrode of the third phase upper bridge arm IGBT is connected to the first end of the upper bridge arm, and the second end of the upper bridge arm is connected to the positive electrode driving end of the third phase upper bridge arm;
the base electrode of the third-phase lower bridge arm IGBT is connected to the first end of the lower bridge arm, and the second end of the lower bridge arm is connected to the positive driving end of the third-phase lower bridge arm.
2. The smart power module of claim 1,
the upper bridge arm integrated control circuit and the lower bridge arm integrated control circuit alternately output driving signals to respectively drive the first phase upper bridge arm IGBT, the second phase upper bridge arm IGBT and the third phase upper bridge arm IGBT to be conducted, or drive the first phase lower bridge arm IGBT, the second phase lower bridge arm IGBT and the third phase lower bridge arm IGBT to be conducted.
3. The smart power module of claim 1 or 2, further comprising:
and the anode of the first upper bridge arm fast recovery diode is connected to the emitter of the first phase upper bridge arm IGBT, and the cathode of the first upper bridge arm fast recovery diode is connected to the collector of the first phase upper bridge arm IGBT.
4. The smart power module of claim 1 or 2, further comprising:
and the anode of the second upper bridge arm fast recovery diode is connected to the emitter of the second phase upper bridge arm IGBT, and the cathode of the second upper bridge arm fast recovery diode is connected to the collector of the second phase upper bridge arm IGBT.
5. The smart power module of claim 1 or 2, further comprising:
and the anode of the third upper bridge arm fast recovery diode is connected to the emitter of the third phase upper bridge arm IGBT, and the cathode of the third upper bridge arm fast recovery diode is connected to the collector of the third phase upper bridge arm IGBT.
6. The smart power module of claim 1 or 2, further comprising:
and the anode of the first lower bridge arm fast recovery diode is connected to the emitter of the first phase lower bridge arm IGBT, and the cathode of the first lower bridge arm fast recovery diode is connected to the collector of the first phase lower bridge arm IGBT.
7. The smart power module of claim 1 or 2, further comprising:
and the anode of the second lower bridge arm fast recovery diode is connected to the emitter of the second phase lower bridge arm IGBT, and the cathode of the second lower bridge arm fast recovery diode is connected to the collector of the second phase lower bridge arm IGBT.
8. The smart power module of claim 1 or 2, further comprising:
a third lower leg fast recovery diode having an anode connected to an emitter of the third phase lower leg IGBT, and the cathode of the third lower bridge arm fast recovery diode is connected to the collector of the third phase lower bridge arm IGBT.
9. A power electronic device comprising the smart power module of any one of claims 1 to 8.
10. Power electronic device according to claim 9,
the power electronic equipment is an air conditioner.
CN201611132339.2A 2016-12-09 2016-12-09 Intelligent power module Active CN106505834B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014036455A (en) * 2012-08-07 2014-02-24 Fuji Electric Co Ltd Power conversion apparatus and output phase interruption detection method thereof
CN105207512A (en) * 2015-09-29 2015-12-30 广东美的制冷设备有限公司 Intelligent power module and air-conditioner
CN105245125A (en) * 2015-09-29 2016-01-13 广东美的制冷设备有限公司 Intelligent power module and air conditioner

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014036455A (en) * 2012-08-07 2014-02-24 Fuji Electric Co Ltd Power conversion apparatus and output phase interruption detection method thereof
CN105207512A (en) * 2015-09-29 2015-12-30 广东美的制冷设备有限公司 Intelligent power module and air-conditioner
CN105245125A (en) * 2015-09-29 2016-01-13 广东美的制冷设备有限公司 Intelligent power module and air conditioner

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