CN106504979B - A kind of deposition method of silicon nitride film - Google Patents
A kind of deposition method of silicon nitride film Download PDFInfo
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- CN106504979B CN106504979B CN201610933466.6A CN201610933466A CN106504979B CN 106504979 B CN106504979 B CN 106504979B CN 201610933466 A CN201610933466 A CN 201610933466A CN 106504979 B CN106504979 B CN 106504979B
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 75
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 238000000151 deposition Methods 0.000 title claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 146
- 239000010703 silicon Substances 0.000 claims abstract description 146
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 143
- 238000000034 method Methods 0.000 claims abstract description 123
- 230000008569 process Effects 0.000 claims abstract description 98
- 230000008021 deposition Effects 0.000 claims abstract description 19
- 238000001816 cooling Methods 0.000 claims abstract description 13
- 238000007599 discharging Methods 0.000 claims abstract description 11
- 238000010792 warming Methods 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 8
- 238000005137 deposition process Methods 0.000 claims abstract description 3
- 230000002708 enhancing effect Effects 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims description 67
- 238000010438 heat treatment Methods 0.000 claims description 61
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 29
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000428 dust Substances 0.000 claims description 8
- 239000004744 fabric Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 34
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 32
- 239000001257 hydrogen Substances 0.000 abstract description 32
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 32
- 230000000694 effects Effects 0.000 abstract description 23
- 238000005516 engineering process Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 90
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 230000003068 static effect Effects 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 210000004027 cell Anatomy 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- 241000580063 Ipomopsis rubra Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a kind of deposition methods of silicon nitride film, method using plasma enhancing chemical vapor depsotition equipment of the invention carries out the deposition of silicon nitride film, in deposition process, silicon wafer successively passes through feed cavity, preheating cavity, process cavity, cooling chamber and discharging chamber, the temperature of feed cavity, preheating cavity and process cavity increases at any time respectively, remembers that the minimum temperature of feed cavity, the maximum temperature of feed cavity, the minimum temperature of preheating cavity, the maximum temperature of preheating cavity, the minimum temperature of process cavity, the maximum temperature of process cavity are respectively T1、T1’、T2、T2’、T3And T3', and 200 DEG C≤T1'≤250 DEG C, T2=T1', the temperature that silicon wafer leaves preheating cavity is identical as the temperature that silicon wafer enters process cavity, and silicon wafer enter process cavity after process cavity be warming up to T3'.Method of the invention reduces the crack probability of power output and silicon wafer, improves hydrogen passivation effect, the EFF of obtained solar battery compared with the existing technology in product improve on 0.08%, Uoc and Isc and also have promotion.
Description
Technical field
The invention belongs to solar battery manufacturing field, it is related to a kind of deposition method of silicon nitride film, more particularly to can
To improve the deposition method of the silicon nitride film of hydrogen passivation effect.
Background technique
Conventional fossil fuel is increasingly depleted, and in existing sustainable energy, solar energy is undoubtedly a kind of most clear
Clean, most universal and most potential alternative energy source.Device of solar generating is also known as solar battery or photovoltaic cell, can incite somebody to action
Solar energy is directly changed into electric energy, and electricity generating principle is the photovoltaic effect based on semiconductor PN.Device of solar generating
Core be cell piece, at present the overwhelming majority be all made of silicon wafer.
In photovoltaic cell production process, need to plate one layer of anti-reflection on the semi-finished product battery i.e. surface of silicon wafer of photovoltaic cell
Penetrate film.Currently, using plasma enhances chemical vapor deposition method (PECVD, Plasma Enhanced Chemical
Vapor Deposition), make gas occur to chemically react on silicon cell surface and forms coating, i.e. antireflective coating.
Gas in PECVD board is in ionization process, need to also be in the environment of certain high temperature other than will be by means of the energy of microwave
Under, just silane and ammonia can be made to ionize completely, occur to form one layer of navy blue SiNx:H film after chemical reaction, it is therein
SiNx (i.e. silicon nitride) plays antireflective, and H (i.e. hydrogen) can play the role of hydrogen passivation.In existing PECVD board,
Temperature locating for silicon wafer changes over time curve referring to Fig. 1, specific process flow are as follows: silicon wafer is fixed on stone in process flow
On black frame, successively pass through preheating cavity, process cavity, cooling chamber and discharging chamber, the main function of usual preheating cavity is: being carried out to silicon wafer
Preheating, to make silicon wafer before deposited silicon nitride, silicon wafer has certain temperature, still, the silicon nitride film of the prior art
The hydrogen passivation effect that the method for deposition is realized is undesirable, further also causes the transformation efficiency of cell piece lower, needs further
It improves to meet the needs of practical application.
Summary of the invention
For the above-mentioned problems in the prior art, the purpose of the present invention is to provide a kind of depositions of silicon nitride film
Method, method of the invention not only reduce power output, reduce power consumption, and also reduce silicon wafer crack probability,
Improve hydrogen passivation effect, the efficiency EFF in the present invention compared with the existing technology in method improve 0.08%, open-circuit voltage
Also there is promotion on Uoc and short circuit current Isc.
In order to achieve the above objectives, the present invention adopts the following technical scheme:
A kind of deposition method of silicon nitride film, the method using plasma enhance chemical vapor depsotition equipment in silicon
Piece surface cvd nitride silicon thin film, in the deposition process of silicon nitride film, including silicon wafer successively passes through plasma enhanced chemical
Feed cavity, the process of preheating cavity and process cavity of vapor deposition apparatus, the temperature for controlling feed cavity and preheating cavity are distinguished at any time
Between extend and increase, remember the minimum temperature of feed cavity, the maximum temperature of feed cavity, the minimum temperature of preheating cavity, preheating cavity most
The maximum temperature of high-temperature, the minimum temperature of process cavity and process cavity is respectively T1、T1’、T2、T2’、T3And T3', wherein 200 DEG C
≤T1'≤250 DEG C, T2=T1', the temperature that silicon wafer leaves preheating cavity is identical as the temperature that silicon wafer enters process cavity, and silicon wafer enters
Process cavity is warming up to T after process cavity3’。
Preferably, the silicon wafer is fixed on graphite frame.
Preferably, the plasma enhanced chemical vapor deposition equipment is board-like PECVD system.
Preferably, the minimum temperature T of feed cavity1Meet: 20 DEG C≤T1'≤50 DEG C, for example, 20 DEG C, 23 DEG C, 26 DEG C, 30
DEG C, 35 DEG C, 40 DEG C, 42 DEG C, 45 DEG C or 50 DEG C, preferably 30 DEG C.
In the present invention, the maximum temperature T of feed cavity1' meet: 200 DEG C≤T1'≤250 DEG C, for example, 200 DEG C, 210 DEG C,
215 DEG C, 225 DEG C, 230 DEG C, 235 DEG C, 240 DEG C, 245 DEG C or 250 DEG C etc., preferably 220 DEG C.
Preferably, time of the silicon wafer Jing Guo feed cavity is 25s~30s, for example, 25s, 26s, 28s, 29s or 30s etc.,
Preferably 28s.
Preferably, the heating rate of feed cavity be 7 DEG C/s~15 DEG C/s, for example, 7 DEG C/s, 8 DEG C/s, 9 DEG C/s, 10 DEG C/
S, 11 DEG C/s, 12 DEG C/s, 13 DEG C/s, 14 DEG C/s or 15 DEG C/s etc., preferably 10 DEG C/s~15 DEG C/s.In the present invention, feed cavity
Heating rate control in this 7 DEG C/s~15 DEG C of range/s (heating rate can change over time within this range), make to rise
Temperature avoids temperature from occurring skyrocketing or drop suddenly, to advantageously reduce crack situation than more gentle.
Preferably, in feed cavity temperature-rise period, silicon wafer is stationary.
The present invention is improved on the basis of the process flow of the prior art, 1. joined before preheating cavity one into
Expect chamber, feeds, heats in feed cavity in the present invention, continue to heat followed by preheating cavity is transferred to, and feed cavity and preheating cavity
Temperature is in the trend slowly risen always, and this heating in advance in feed cavity, which is heated and moved into preheating cavity, to continue slowly to rise
The mode of temperature heating compared with the existing technology in heating method be more advantageous to and improve subsequent silicon nitride film deposition and hydrogen
Passivation effect.2. in the present invention, the cooperation of the time of the temperature and heating of feed cavity heating directly affects the effect of plated film,
If the maximum temperature of feed cavity is lower than 200 DEG C, the compactness that will lead to the silicon nitride film of deposition is poor；On the contrary, if into
Expect that the maximum temperature of chamber is higher than 250 DEG C, the spilling of H ion when will lead to deposited silicon nitride is unfavorable for the deposition of H ion, makes hydrogen
Passivation weakens, and therefore, heating temperature needs to control in suitable range.Silicon wafer exists in the time range of feed cavity heating
It is static in feed cavity, and as the maximum temperature T for being warming up to feed cavity1' when, silicon wafer leaves feed cavity, if when the heating of feed cavity
Between shorter than 25s, then it is insufficient to the preheating of silicon wafer；Conversely, will lead to silicon chip surface temperature mistake if this heating-up time is longer than 30s
Height, therefore, heating time need in suitable range.
Preferably, the silicon chip surface filling with inert gas in the temperature-rise period of feed cavity, into feed cavity.
Preferably, the inert gas be nitrogen, helium, neon, argon gas, Krypton or xenon in any a kind or at least
2 kinds of combination, preferably nitrogen.
Preferably, the flow of filling with inert gas be 500sccm~1200sccm, for example, 500sccm, 600sccm,
700sccm, 750sccm, 800sccm, 850sccm, 950sccm, 1000sccm, 1100sccm or 1200sccm etc., preferably
800sccm。
The present invention has carried out filling on the basis of existing technology inert gas (such as the N of desired flow to silicon chip surface2)
Improvement, thus by silicon chip surface adhere to particulate matter rinse well, improve the surface cleanness of silicon wafer, further reduce
The surface recombination that these particulate matters introduce improves the effect of sequent surface hydrogen passivation.
Preferably, the minimum temperature T of preheating cavity2Meet: 210 DEG C≤T2≤ 280 DEG C, for example, 210 DEG C, 220 DEG C, 225
DEG C, 230 DEG C, 240 DEG C, 250 DEG C, 255 DEG C, 260 DEG C, 265 DEG C, 270 DEG C, 275 DEG C or 280 DEG C etc., preferably 270 DEG C.
Preferably, the maximum temperature T of preheating cavity2' meet: 280 DEG C≤T2'≤320 DEG C, for example, 280 DEG C, 285 DEG C,
290 DEG C, 292 DEG C, 295 DEG C, 300 DEG C, 305 DEG C, 310 DEG C, 315 DEG C or 320 DEG C etc., preferably 300 DEG C.
In the present invention, on the basis of feed cavity heats silicon wafer, preheating cavity continues to preheat to silicon wafer, plays linking charging
The effect of chamber and process cavity.The present invention is also by adjusting the relationship phase of the minimum temperature of preheating cavity and the maximum temperature of feed cavity
Deng the relationship of minimum temperature of maximum temperature and process cavity of preheating cavity is equal, the mistake for keeping the heating trend of silicon chip surface gentle
It crosses to process cavity, reaches more preferably silicon nitride film deposition effect and hydrogen passivation effect.
In the present invention, gas is not passed through in preheating cavity.
Preferably, the silicon wafer by preheating cavity time be 5s~10s, such as 5s, 6s, 7s, 8s, 9s or 10s etc.,
Preferably 8s.
Preferably, the silicon wafer is equal with the heating-up time of preheating cavity by the time of preheating cavity.
Preferably, the heating rate of preheating cavity be 5 DEG C/s~10 DEG C/s, for example, 5 DEG C/s, 6 DEG C/s, 6.5 DEG C/s, 7 DEG C/
S, 8 DEG C/s, 8.5 DEG C/s, 9 DEG C/s or 10 DEG C/s etc., preferably 8 DEG C/s~10 DEG C/s.The preheating cavity temperature rise period, heating rate is not
It is fixed on some heating rate, heating rate can the variation in this 5 DEG C/s~10 DEG C of range/s.
In the present invention, it is connected with ammonia and silane in process cavity, nitride deposition is obtained after reaction to the surface of silicon wafer.Silicon wafer
Since the deposited silicon nitride entering process cavity, until the deposition of silicon nitride can be continued until out process cavity, PECVD board is just
It is uninterrupted in process cavity to be passed through ammonia and silane gas in normal operational process, after being ionized by microwave-excitation, in silicon wafer
Surface reaction generates silicon nitride film, it will usually it is different according to the requirements of different film layer refractive index, set ammonia and silane it
Between ratio, both general ratio control range is ammonia: silane=4:1~10:1, ammonia setting range is 1000~
2000sccm, silane setting range are 100~500sccm, and pressure set range is 0.2mbar~0.3mbar.
Preferably, the minimum temperature T of process cavity3Meet: 280 DEG C≤T3≤ 320 DEG C, for example, 280 DEG C, 290 DEG C, 300
DEG C, 303 DEG C, 305 DEG C, 310 DEG C, 313 DEG C, 316 DEG C or 320 DEG C etc., preferably 320 DEG C.
Preferably, the maximum temperature T of the process cavity3' meet: 320 DEG C≤T3'≤350 DEG C, for example, 320 DEG C, 325
DEG C, 328 DEG C, 330 DEG C, 333 DEG C, 335 DEG C, 340 DEG C, 345 DEG C or 350 DEG C etc., preferably 330 DEG C.
Preferably, time of the silicon wafer Jing Guo process cavity be 50s~80s, such as 50s, 55s, 60s, 62s, 65s,
70s, 73s, 76s, 78s or 80s etc., preferably 60s.
Preferably, time of the silicon wafer Jing Guo process cavity is equal with the heating-up time of process cavity.
Preferably, the heating rate of process cavity is 5 DEG C/s~10 DEG C/s, such as 5 DEG C/s, 5.5 DEG C/s, 6 DEG C/s, 6.5
DEG C/s, 7 DEG C/s, 8 DEG C/s, 8.5 DEG C/s, 9 DEG C/s, 9.5 DEG C/s or 10 DEG C/s etc., preferably 8 DEG C/s~10 DEG C/s.Process cavity
Temperature rise period, heating rate are not fixed on some heating rate, and heating rate can be in this 5 DEG C/s~10 DEG C of range/s
Interior variation.
In the present invention, the setting of the temperature of process cavity is the most key, but to make passivation effect more preferably, also be unable to do without feed cavity and
The setting of each parameter of preheating cavity.In the present invention, each parameter coordination cooperation in these three chambers, keeps final silicon nitride film fine and close
Property, reflectivity and passivation effect are all very good.
Preferably, when feed cavity is warming up to T1' when, silicon wafer leaves feed cavity and enters preheating cavity；When preheating cavity is warming up to
T2' when, silicon wafer leaves preheating cavity and enters process cavity.
Heretofore described T1' and T2' maximum temperature of feed cavity and the maximum temperature of preheating cavity are respectively referred to, the two temperature
Spend it is different from set temperature when practical operation, be illustrated by taking feed cavity as an example: set temperature to T, when temperature reach T (T <
T1') when stop heating, the temperature of feed cavity that waste heat can make continue increase reaches maximum temperature T1'.The present invention needs to guarantee: when
Feed cavity temperature reaches T1' when so that silicon wafer is left feed cavity and is entered preheating cavity.
In the present invention, from silicon wafer, stationary state heating is accomplished to and leaves feed cavity and enter preheating cavity in feed cavity, though
So experience regular hour, this period is interior, and there is no the declines of temperature, although warm because reaching setting in this period
It is no longer heat up after degree, but waste heat is rising the temperature of feed cavity still, and controls temperature when silicon wafer leaves feed cavity
It is just the maximum temperature T of feed cavity1’。
It in the present invention, is separated between preheating cavity and process cavity without door, escape to from preheating cavity into process cavity and also do not deposit
The case where temperature reduces.
In the present invention, the silicon wafer successively passes through the whole process of feed cavity, preheating cavity and process cavity, temperature locating for silicon wafer
It is gentle to spend versus time curve, without the phenomenon that skyrocketing or dropping suddenly.
Preferably, method of the invention further includes sequentially entering cooling chamber and discharging chamber after silicon wafer leaves process cavity
Step.
Preferably, the cleannes requirement of the feed cavity are as follows: before using feed cavity, the heating plate in feed cavity is torn open
It removes, it is clean to dip in alcohol thorough cleaning with non-dust cloth.Since when feed cavity heats up, silicon wafer is static, and heat up time compared with
A length of 25s~30s, thus the cleannes of feed cavity are required it is also higher than preheating cavity and process cavity, it is preferred by the way of are as follows:
Before feed cavity use, such as when each board PM (maintenance), the heating plate in feed cavity is removed, dips in alcohol with non-dust cloth
Thorough cleaning is clean, thus ensure that silicon wafer in the cleanliness of the front surface of deposited silicon nitride, reduces the compound of silicon chip surface,
Increase silicon nitride film deposition effect and hydrogen passivation effect.
The optimal technical scheme of deposition method as silicon nitride film of the present invention, the method is using board-like
PECVD system tears the heating plate in feed cavity open before silicon nitride film deposition in silicon chip surface cvd nitride silicon thin film
It removes, it is clean to dip in alcohol thorough cleaning with non-dust cloth；Silicon wafer is fixed on graphite frame；Silicon wafer enters in feed cavity, quiet in silicon wafer
Feed cavity is set to heat up in the case where only with 10 DEG C/s~15 DEG C/s heating rate, and herein during heating to silicon wafer
Surface inflated with nitrogen, the nitrogen flow being filled be 800sccm；When preheating cavity temperature reaches maximum temperature T1' when silicon wafer is moved into
In preheating cavity, the temperature of preheating cavity is the minimum temperature T of preheating cavity when immigration2=T1', make preheating cavity with 5 DEG C/s~10 DEG C/s
Heating rate heats up, when preheating cavity temperature reaches maximum temperature T2' when by silicon wafer move into process cavity in, silicon wafer leaves preheating
The temperature that the temperature of chamber and silicon wafer enter process cavity is identical, and silicon wafer enter process cavity after make process cavity with 5 DEG C/s~10 DEG C/s
Heating rate heat up, silicon wafer remove process cavity after enter cooling chamber cooled down, then from discharging chamber discharge, realize pair
Wafers silicon nitride film deposition and hydrogen passivation.
In this optimal technical scheme, by the basis of existing technology, one being added before original preheating cavity
Feed cavity, and the design of original thermal field is improved, the temperature of preheating cavity is reduced, and adjust feed cavity, preheating cavity and work
The temperature of skill chamber is connected matching relationship, passes through silicon wafer successively during the entire process of feed cavity, preheating cavity and process cavity, silicon wafer institute
The temperature versus time curve at place gently rises, and without the phenomenon that skyrocketing or dropping suddenly, is conducive to improve silicon nitride film deposition
Effect and hydrogen passivation effect are also greatly reduced the crack probability of silicon wafer.Moreover, on the one hand by quiet in silicon wafer in the present invention
To silicon wafer inflated with nitrogen when only and feed cavity heats up, the cleannes requirement of feed cavity is on the other hand improved, so that silicon chip surface is clean
Degree improves, and reduces the compound of silicon chip surface and compound with impurity particle, is conducive to obtain good hydrogen passivation effect, mention
Efficiency, the method for the deposition method of silicon nitride film of the invention compared with the existing technology are risen, efficiency EFF has 0.08% to mention
It rises, also has promotion on open-circuit voltage Uoc and short circuit current Isc.
Compared with the prior art, the invention has the following beneficial effects:
1. the present invention joined feed cavity before existing preheating cavity, and redesign thermal field curve, pre- by reducing
The temperature of hot chamber, and design the temperature variation curve of feed cavity, during the entire process of feed cavity to preheating cavity, on temperature is slow
It rises, to reduce temperature when silicon chip surface has just started deposited silicon nitride, the heavy of H ion is more advantageous under this cryogenic conditions
Product, reduces the spilling of H ion, has been finally reached the effect for promoting H passivation and improving silicon nitride film deposition effect；And
And the temperature for reducing feed cavity and preheating cavity can also reduce power output, reduce power consumption.
2. requiring in the present invention the cleannes in feed cavity to have re-started definition, feed cavity is proposed and compares preheating cavity
With the higher cleannes requirement of process cavity, the proposition that this cleannes requires is the static heating of middle silicon wafer according to the present invention, and is added
The parameters such as hot temperature and time and propose, ensure that silicon chip surface before deposited silicon nitride, the cleanliness of silicon chip surface, reduce
Silicon chip surface it is compound, increase silicon nitride film deposition effect and hydrogen passivation effect.
3. being improved in the present invention to environment in feed cavity, silicon wafer fills N in static heating, to silicon chip surface2, right
Silicon chip surface is cleaned, and the cleanliness of silicon chip surface is further improved, and improves surface passivation effect.
4. method operation of the invention and control are simple, temperature condition of the invention only need to be set in board, fitted
In popularization.
5. in the present invention, being sequentially connected altogether by feed cavity temperature curve, preheating cavity temperature curve and process cavity temperature curve
Gently rise from low to high with the thermal field curve constituted, avoids steep temperature excursion in the temperature curve of prior art Central Plains and drop suddenly
And the big problem of silicon wafer crack probability caused.
Detailed description of the invention
When Fig. 1 is that comparative example 1 carries out hydrogen passivation to solar battery using board-like PECVD board, temperature locating for silicon wafer
Versus time curve；
When Fig. 2 is that embodiment 1 carries out hydrogen passivation to solar battery using board-like PECVD board, temperature locating for silicon wafer
Versus time curve；
Wherein, a, b, c and d are respectively indicated: a, feed cavity temperature curve；B, preheating cavity temperature curve；C, process cavity temperature
Curve；D, cooling chamber temperature curve.
Specific embodiment
To further illustrate the technical scheme of the present invention below with reference to the accompanying drawings and specific embodiments.
Embodiment 1
A kind of deposition method of silicon nitride film, the method enhance chemical vapor depsotition equipment using plate plasma
Carry out hydrogen passivation.Before hydrogen passivation, the heating plate in feed cavity is removed, alcohol is dipped in non-dust cloth and thoroughly cleans up；It will
Silicon wafer is fixed on graphite frame；Silicon wafer enters in feed cavity, makes feed cavity from 20 DEG C with 10 DEG C/s in the case where silicon wafer is static
The heating rate of~15 DEG C/s DEG C/s heats up, it is static in this silicon wafer and during heat up to the surface inflated with nitrogen of silicon wafer, be filled with
Nitrogen flow be 800sccm, silicon wafer is moved into preheating cavity when reaching 250 DEG C of feed cavity maximum temperature, when immigration preheats
The temperature of chamber is 250 DEG C, is heated up with 8 DEG C/s~10 DEG C/s DEG C/s heating rate to preheating cavity, and silicon wafer moves in preheating cavity
It leaves preheating cavity after 10s and enters process cavity, the temperature of process cavity is 320 DEG C when entrance, with 5 DEG C/s~7 DEG C/s heating rate
The maximum temperature of process cavity is warming up to process cavity, then temperature is declined slightly, and silicon wafer leaves after mobile 80s in process cavity
Process cavity and enter cooling chamber, then enter back into discharging chamber, complete to be passivated the silicon nitride film deposition and hydrogen of silicon wafer.
In the present embodiment, temperature versus time curve locating for silicon wafer is as shown in Fig. 2, more specifically include feed cavity
Temperature curve a, preheating cavity temperature curve b, process cavity temperature curve c and cooling chamber temperature curve d, it is as seen from the figure, entire to heat up
Curve ratio is more gentle, without skyrocket steep drop the phenomenon that.
Performance detection is carried out to the solar battery for the hydrogen passivation that the present embodiment obtains, the results are shown in Table 1.
Embodiment 2
A kind of deposition method of silicon nitride film, the method enhance chemical vapor depsotition equipment using plate plasma
Carry out hydrogen passivation.Before hydrogen passivation, the heating plate in feed cavity is removed, alcohol is dipped in non-dust cloth and thoroughly cleans up；It will
Silicon wafer is fixed on graphite frame；Silicon wafer enters in feed cavity, makes feed cavity from 20 DEG C with 10 DEG C/s in the case where silicon wafer is static
The heating rate of~15 DEG C/s heats up, it is static in this silicon wafer and during heat up to the surface inflated with nitrogen of silicon wafer, the nitrogen being filled with
Throughput is 1000sccm, moves into silicon wafer in preheating cavity when reaching 250 DEG C of feed cavity maximum temperature, preheating cavity when immigration
Temperature is 250 DEG C, is heated up with the heating rate of 5~10 DEG C/s to preheating cavity, and silicon wafer leaves preheating after mobile 8s in preheating cavity
Chamber and enter process cavity, the temperature of process cavity is 320 DEG C when entrance, heated up with the heating rate of 5~10 DEG C/s to process cavity, silicon
Piece leaves process cavity after mobile 50s in process cavity and enters cooling chamber, then enters back into discharging chamber, completes the nitridation to silicon wafer
Silicon deposited film and hydrogen passivation.
In the present embodiment, temperature versus time curve locating for silicon wafer is similar to Fig. 2, and entire heating curve is relatively more flat
It is slow, without the phenomenon that skyrocketing or dropping suddenly.
Performance detection is carried out to the solar battery for the hydrogen passivation that the present embodiment obtains, the results are shown in Table 1.
Embodiment 3
A kind of deposition method of silicon nitride film, the method enhance chemical vapor depsotition equipment using plate plasma
Carry out hydrogen passivation.Before hydrogen passivation, the heating plate in feed cavity is removed, alcohol is dipped in non-dust cloth and thoroughly cleans up；It will
Silicon wafer is fixed on graphite frame；Silicon wafer enters in feed cavity, make feed cavity from 50 DEG C with 8 DEG C/s in the case where silicon wafer is static
The heating rate of~10 DEG C/s heats up, it is static in this silicon wafer and during heat up to the surface inflated with nitrogen of silicon wafer, the nitrogen being filled with
Throughput is 700sccm, moves into silicon wafer in preheating cavity when reaching strong 250 DEG C of maximum temperature of charging, preheating cavity when immigration
Temperature is 250 DEG C, is heated up with the heating rate of 5~10 DEG C/s to preheating cavity, and silicon wafer leaves preheating after mobile 8s in preheating cavity
Chamber and enter process cavity, the temperature of process cavity is 310 DEG C when entrance, heated up with the heating rate of 5~10 DEG C/s to process cavity, silicon
Piece mobile 60s in process cavity leaves process cavity and enters cooling chamber, then enters back into discharging chamber, completes the silicon nitride to silicon wafer
Film deposition and hydrogen passivation.
In the present embodiment, temperature versus time curve locating for silicon wafer is similar to Fig. 2, and entire heating curve is relatively more flat
It is slow, without the phenomenon that skyrocketing or dropping suddenly.
Performance detection is carried out to the solar battery for the hydrogen passivation that the present embodiment obtains, the results are shown in Table 1.
Comparative example 1
A kind of deposition method of silicon nitride film, the method using plasma, which enhances chemical vapor depsotition equipment, to carry out
Hydrogen passivation, during the hydrogen passivation, silicon wafer successively passes through preheating cavity, process cavity, cooling chamber and discharging chamber；Silicon wafer is fixed
On graphite frame, initially enter preheating cavity, preheating cavity temperature change is as follows: silicon wafer starts from 15 DEG C or so with 18~22 DEG C/s
Heating rate starts to warm up, and after maximum temperature rises to 465 DEG C or more, graphite frame is transmitted to process cavity, during transmitting, silicon
The temperature on piece surface can drop sharply to 150 DEG C or so, after graphite frame is transmitted to process cavity, be warming up to 300 DEG C or more again
Afterwards, start deposited silicon nitride, after deposited silicon nitride, graphite frame is transmitted at blanking bench using cooling chamber and discharging chamber.
Performance detection is carried out to the solar battery for the hydrogen passivation that this comparative example obtains, the results are shown in Table 1.
Table 1
Comparing result: accurate correlation data shows, improved technique, has 0.07~0.10% to mention compared with original process EFF
It rises, also has promotion on Uoc and Isc.
The Applicant declares that the present invention is explained by the above embodiments method detailed of the invention, but the present invention not office
Be limited to above-mentioned method detailed, that is, do not mean that the invention must rely on the above detailed methods to implement.Technical field
Technical staff it will be clearly understood that any improvement in the present invention, equivalence replacement and auxiliary element to each raw material of product of the present invention
Addition, selection of concrete mode etc., all of which fall within the scope of protection and disclosure of the present invention.
Claims (34)
1. a kind of deposition method of silicon nitride film, which is characterized in that the method using plasma enhances chemical vapor deposition
Product equipment is in silicon chip surface cvd nitride silicon thin film, the deposition process of the silicon nitride film, including the silicon wafer successively passes through
Cross the feed cavity of plasma enhanced chemical vapor deposition equipment, the process of preheating cavity and process cavity, control the feed cavity and
The temperature of preheating cavity extends at any time respectively and increases, and remembers the minimum temperature of feed cavity, the maximum temperature of feed cavity, preheating cavity
Minimum temperature, the maximum temperature of preheating cavity, the maximum temperature of the minimum temperature of process cavity and process cavity be respectively T1、T1’、T2、
T2’、T3And T3', wherein 200 DEG C≤T1'≤250 DEG C, T2=T1', silicon wafer leaves the temperature of preheating cavity and silicon wafer enters process cavity
Temperature it is identical, and silicon wafer enter process cavity after process cavity be warming up to T3'；
Silicon wafer is equal with the heating-up time of preheating cavity by the time of preheating cavity；
Time of the silicon wafer Jing Guo process cavity is equal with the heating-up time of process cavity.
2. the deposition method of silicon nitride film according to claim 1, which is characterized in that the minimum temperature of the feed cavity
T1Meet: 20 DEG C≤T1≤50℃。
3. the deposition method of silicon nitride film according to claim 2, which is characterized in that the minimum temperature of the feed cavity
T1Meet: T1=30 DEG C.
4. the deposition method of silicon nitride film according to claim 1, which is characterized in that the maximum temperature of the feed cavity
T1' it is 220 DEG C.
5. the deposition method of silicon nitride film according to claim 1, which is characterized in that the silicon wafer is by feed cavity
Time is 25s~30s.
6. the deposition method of silicon nitride film according to claim 5, which is characterized in that the silicon wafer is by feed cavity
Time is 28s.
7. the deposition method of silicon nitride film according to claim 1, which is characterized in that the heating rate of the feed cavity
For 7 DEG C/s~15 DEG C/s.
8. the deposition method of silicon nitride film according to claim 7, which is characterized in that the heating rate of the feed cavity
For 10 DEG C/s~15 DEG C/s.
9. the deposition method of silicon nitride film according to claim 1, which is characterized in that the process of the feed cavity heating
In, the silicon wafer is stationary.
10. the deposition method of silicon nitride film according to claim 1, which is characterized in that the mistake of the feed cavity heating
The surface filling with inert gas of Cheng Zhong, Xiang Suoshu silicon wafer.
11. the deposition method of silicon nitride film according to claim 10, which is characterized in that the inert gas is nitrogen
Any a kind or at least two kinds of of combination in gas, helium, neon, argon gas, Krypton or xenon.
12. the deposition method of silicon nitride film according to claim 11, which is characterized in that the inert gas is nitrogen
Gas.
13. the deposition method of silicon nitride film according to claim 10, which is characterized in that the flow of filling with inert gas is
500sccm~1200sccm.
14. the deposition method of silicon nitride film according to claim 13, which is characterized in that the flow of filling with inert gas is
800sccm。
15. the deposition method of silicon nitride film according to claim 1, which is characterized in that the lowest temperature of the preheating cavity
Spend T2Meet: 210 DEG C≤T2≤280℃。
16. the deposition method of silicon nitride film according to claim 14, which is characterized in that the lowest temperature of the preheating cavity
Spend T2Meet: T2=270 DEG C.
17. the deposition method of silicon nitride film according to claim 1, which is characterized in that the highest temperature of the preheating cavity
Spend T2' meet: 280 DEG C≤T2’≤320℃。
18. the deposition method of silicon nitride film according to claim 17, which is characterized in that the highest temperature of the preheating cavity
Spend T2' meet: T2'=300 DEG C.
19. the deposition method of silicon nitride film according to claim 1, which is characterized in that the silicon wafer passes through preheating cavity
Time be 5s~10.
20. the deposition method of silicon nitride film according to claim 19, which is characterized in that the silicon wafer passes through preheating cavity
Time be 8s.
21. the deposition method of silicon nitride film according to claim 1, which is characterized in that the heating rate of preheating cavity is 5
DEG C/s~10 DEG C/s.
22. the deposition method of silicon nitride film according to claim 21, which is characterized in that the heating rate of preheating cavity is
8 DEG C/s~10 DEG C/s.
23. the deposition method of silicon nitride film according to claim 1, which is characterized in that the lowest temperature of the process cavity
Spend T3Meet: 280 DEG C≤T3≤320℃。
24. the deposition method of silicon nitride film according to claim 23, which is characterized in that the lowest temperature of the process cavity
Spend T3Meet: T3=320 DEG C.
25. the deposition method of silicon nitride film according to claim 1, which is characterized in that the highest temperature of the process cavity
Spend T3' meet: 320 DEG C≤T3’≤350℃。
26. the deposition method of silicon nitride film according to claim 25, which is characterized in that the highest temperature of the process cavity
Spend T3' meet: T3'=330 DEG C.
27. the deposition method of silicon nitride film according to claim 1, which is characterized in that the silicon wafer passes through process cavity
Time be 50s~80s.
28. the deposition method of silicon nitride film according to claim 27, which is characterized in that the silicon wafer passes through process cavity
Time be 60s.
29. the deposition method of silicon nitride film according to claim 1, which is characterized in that the heating rate of process cavity is 5
DEG C/s~10 DEG C/s.
30. the deposition method of silicon nitride film according to claim 29, which is characterized in that the heating rate of process cavity is
5 DEG C/s~7 DEG C/s.
31. the deposition method of silicon nitride film according to claim 1, which is characterized in that when feed cavity is warming up to T1' when,
Silicon wafer leaves feed cavity and enters preheating cavity；When preheating cavity is warming up to T2' when, silicon wafer leaves preheating cavity and enters process cavity.
32. the deposition method of silicon nitride film according to claim 1, which is characterized in that the method also includes in silicon
Piece leaves the step of process cavity sequentially enters cooling chamber and discharging chamber later.
33. the deposition method of silicon nitride film according to claim 1, which is characterized in that the cleannes of the feed cavity
It is required that are as follows: before using feed cavity, the heating plate in feed cavity is removed, it is clean to dip in alcohol thorough cleaning with non-dust cloth.
34. the deposition method of -33 described in any item silicon nitride films according to claim 1, which is characterized in that the method packet
It includes: using plate plasma enhancing chemical gas-phase deposition system in silicon chip surface cvd nitride silicon thin film, in silicon nitride film
Before deposition, the heating plate in feed cavity is removed, it is clean to dip in alcohol thorough cleaning with non-dust cloth；Silicon wafer is fixed to graphite frame
On；Silicon wafer enters in feed cavity, makes feed cavity with 10 DEG C/s~15 DEG C/s heating rate in the case where silicon wafer is stationary
It heats up, and herein during heating to the surface inflated with nitrogen of silicon wafer, the flow of inflated with nitrogen is 800sccm；Work as preheating cavity
Temperature reaches maximum temperature T1' when silicon wafer is moved into preheating cavity, the temperature of preheating cavity is the minimum temperature T of preheating cavity when immigration2
=T1', so that preheating cavity is heated up with 5 DEG C/s~10 DEG C/s heating rate, when preheating cavity temperature reaches maximum temperature T2' when
Silicon wafer is moved into process cavity, the temperature of process cavity is the minimum temperature T of process cavity when immigration3=T2', make process cavity with 5 DEG C/s
The heating rate of~10 DEG C/s heats up, and silicon wafer is cooled down after removing process cavity into cooling chamber, then goes out from discharging chamber
Material.
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| CN102593260A (en) * | 2012-03-13 | 2012-07-18 | 常州比太科技有限公司 | Method for forming silicon nitride film by using excitation of plasma |
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| US8293592B2 (en) * | 2008-04-16 | 2012-10-23 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device and substrate processing apparatus |
| CN201386135Y (en) * | 2009-04-03 | 2010-01-20 | 中国科学院沈阳科学仪器研制中心有限公司 | Full-automatic large flat PECVD silicon nitride membrane preparation system |
| CN102593260A (en) * | 2012-03-13 | 2012-07-18 | 常州比太科技有限公司 | Method for forming silicon nitride film by using excitation of plasma |
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