CN106502468B - Touch substrate, touch display device and manufacturing method - Google Patents
Touch substrate, touch display device and manufacturing method Download PDFInfo
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- CN106502468B CN106502468B CN201611039077.5A CN201611039077A CN106502468B CN 106502468 B CN106502468 B CN 106502468B CN 201611039077 A CN201611039077 A CN 201611039077A CN 106502468 B CN106502468 B CN 106502468B
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- 125000004430 oxygen atom Chemical group O* 0.000 claims description 23
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- 229910044991 metal oxide Inorganic materials 0.000 claims description 12
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- 238000000034 method Methods 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 11
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
Abstract
The invention provides a touch substrate, a touch display device and a manufacturing method, wherein the touch substrate comprises the following components: the touch control device comprises a substrate and a touch control layer arranged on the substrate, wherein the touch control layer is a complete film layer in a touch control area of the touch control substrate, and the touch control layer comprises a pattern of a touch control electrode and an insulation pattern. In the invention, the touch layer comprising the pattern of the touch electrode is a complete film layer in the touch area of the touch substrate, so that the pattern of the touch electrode has no gradient angle and can not reflect external light, and the display effect of the touch display device with the touch substrate is improved.
Description
Technical Field
The present invention relates to the field of touch technologies, and in particular, to a touch substrate, a touch display device and a manufacturing method thereof.
Background
With the rapid development of tablet smartphones and tablet computers, the technology of touch screens has been rapidly developed. The existing touch screen technology mainly comprises a resistive type touch screen technology, a capacitive type touch screen technology and an infrared optical type touch screen technology. The resistance type makes the two layers of electrodes conducted through pressing to determine a touch point; the capacitive type determines a touch point through the capacitance change after human body touches; infrared optics is the determination of the touch point by a finger blocking infrared light reception. Capacitive touch screens are widely used in mobile applications due to their sensitivity.
Capacitive touch screens, which are the mainstream in the market, are divided into: OGS (One Glass Solution) On-Cell Touch and In-Cell Touch. The OGS is to paste a piece of glass with a touch function on the surface of a liquid crystal panel; on-Cell Touch is to make Touch function On the surface of color film substrate (CF); in-Cell Touch is the fabrication of Touch functions inside a Cell. Considering the light weight and cost factors, on-Cell Touch and In-Cell Touch are the directions of development of Touch technology In the future.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an On-Cell Touch screen in the prior art. The touch screen comprises an array substrate 11 and a color film substrate 31, wherein the array substrate 11 and the color film substrate 31 are connected in a butt joint way through a frame sealing adhesive 21, a pattern 4a of a touch electrode is arranged on the color film substrate 31, and the pattern 4a of the touch electrode is usually formed by an ITO film layer through a composition process (comprising processes of exposure, development, etching and the like). Because the graph 4a of the touch electrode has a certain gradient angle, the part of the gradient angle can reflect external light, obvious reflection light stripes can be formed, and the display effect is affected.
Disclosure of Invention
In view of this, the invention provides a Touch substrate, a Touch display device and a manufacturing method thereof, which are used for solving the problems that the patterns of the Touch electrodes in the existing On-Cell Touch screen have gradient angles, can reflect external light rays, can form obvious reflected light stripes and influence the display effect.
In order to solve the above technical problems, the present invention provides a touch substrate, including: the touch control device comprises a substrate and a touch control layer arranged on the substrate, wherein the touch control layer is a complete film layer in a touch control area of the touch control substrate, and the touch control layer comprises a pattern of a touch control electrode and an insulation pattern.
Preferably, the pattern of the touch electrode and the insulation pattern are formed of the same transparent semiconductor thin film layer, the pattern of the touch electrode is formed of a portion of the transparent semiconductor thin film layer through a conductive process, and the insulation pattern is formed of a portion of the transparent semiconductor thin film layer through an insulation process.
Preferably, the transparent semiconductor thin film layer is formed of a transparent metal oxide semiconductor material.
Preferably, the transparent metal oxide semiconductor material is InGaZnO, inGaO, ITZO or AlZnO.
Preferably, the content of oxygen atoms in the conductive material formed by the conductive treatment of the transparent semiconductor thin film layer is 15% to 30%, and the content of oxygen atoms in the insulating material formed by the insulating treatment of the transparent semiconductor thin film layer is 70% to 85%.
Preferably, the electrical conductivity of the pattern of the touch electrode is more than 10 3 (Ωcm) -1 The conductivity of the insulating pattern is less than 10 -10 (Ωcm) -1 。
Preferably, the touch substrate is a color film substrate, and the substrate is a substrate of the color film substrate.
Preferably, the pattern of the touch electrode and the insulating image are disposed on the light emitting side of the substrate.
Preferably, the touch layer further includes a semiconductor pattern.
The invention also provides a touch display device which comprises the touch substrate.
The invention also provides a manufacturing method of the touch substrate, which comprises the following steps:
and forming a touch layer on a substrate, wherein the touch layer is a complete film layer in a touch area of the touch substrate, and the touch layer comprises a pattern of a touch electrode and an insulation pattern.
Preferably, the step of forming the touch layer on a substrate includes:
forming a transparent semiconductor film layer on the substrate base plate;
and conducting a part of the transparent semiconductor film layer to form a pattern of the touch electrode, and conducting an insulating treatment to form the insulating pattern.
Preferably, the transparent semiconductor thin film layer is formed of a transparent metal oxide semiconductor material.
Preferably, the step of conducting the portion of the transparent semiconductor thin film layer, conducting the insulating portion of the transparent semiconductor thin film layer, and forming the pattern of the touch electrode and the insulating pattern includes:
forming a first photoresist layer on the transparent semiconductor film layer;
exposing and developing the first photoresist layer by using a mask plate to form a first photoresist pattern, wherein the first photoresist pattern corresponds to the pattern of the touch electrode or the insulating pattern;
performing insulation or conductor treatment on the transparent semiconductor film layer covered with the first photoresist pattern to form the insulation pattern or the pattern of the touch electrode;
stripping the first photoresist pattern;
forming a second photoresist layer on the transparent semiconductor film layer;
exposing and developing the second photoresist layer by using a mask plate to form a second photoresist pattern, wherein the second photoresist pattern corresponds to the insulating pattern or the pattern of the touch electrode;
conducting or insulating treatment is carried out on the transparent semiconductor film layer covered with the second photoresist pattern, so as to form a pattern or an insulating pattern of the touch electrode;
and stripping the second photoresist pattern.
Preferably, the step of insulating the transparent semiconductor thin film layer includes:
and processing the transparent semiconductor film layer covered with the first photoresist pattern or the second photoresist pattern in an oxidizing atmosphere at 100-300 ℃ for 30-120 min.
Preferably, the step of conducting the transparent semiconductor thin film layer includes:
and processing the transparent semiconductor film layer covered with the first photoresist pattern or the second photoresist pattern in a reducing atmosphere at 100-300 ℃ for 30-120 min.
Preferably, the touch layer further includes a semiconductor pattern.
The technical scheme of the invention has the following beneficial effects:
the touch layer comprising the pattern of the touch electrode is a complete film layer in the touch area of the touch substrate, so that the pattern of the touch electrode has no gradient angle, no reflection is formed on external light, and the display effect of the touch display device with the touch substrate is improved.
Drawings
FIG. 1 is a schematic view of an On-Cell Touch screen in the prior art;
FIG. 2 is a cross-sectional view of a touch substrate according to an embodiment of the invention;
FIG. 3A is a top view of a touch substrate according to an embodiment of the invention;
FIG. 3B is a top view of a touch substrate according to another embodiment of the invention;
fig. 4 is a schematic structural diagram of a touch display device according to an embodiment of the invention;
fig. 5A to 5H are schematic views illustrating a manufacturing method of a touch substrate according to an embodiment of the invention;
fig. 6A to fig. 6H are schematic views illustrating a manufacturing method of a touch substrate according to another embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which are obtained by a person skilled in the art based on the described embodiments of the invention, fall within the scope of protection of the invention.
In order to solve the problems that the pattern of a Touch electrode in the conventional On-Cell Touch screen has a gradient angle, can reflect external light, can form obvious reflection light stripes and influence the display effect, the embodiment of the invention provides a Touch substrate, which comprises: the touch control device comprises a substrate and a touch control layer arranged on the substrate, wherein the touch control layer is a complete film layer in a touch control area of the touch control substrate, and the touch control layer comprises a pattern of a touch control electrode and an insulation pattern.
Because the touch layer comprising the pattern of the touch electrode is a complete film layer in the touch area of the touch substrate, the pattern of the touch electrode has no gradient angle, and can not reflect external light, thereby improving the display effect of the touch display device with the touch substrate.
In some embodiments of the present invention, the touch layer includes only the pattern of the touch electrode and the insulating pattern, i.e., the conductive pattern and the insulating pattern, and of course, in other embodiments of the present invention, the touch layer may also include other patterns, such as a semiconductor pattern, for example, between the pattern of the touch electrode and the insulating pattern.
Referring to fig. 2, fig. 2 is a cross-sectional view of a touch substrate according to an embodiment of the invention, where the touch substrate includes: the touch control layer is a complete film layer in the touch control area of the touch control substrate, and the touch control layer only comprises a pattern 41 of a touch control electrode and an insulation pattern 42.
In the embodiment of the invention, the pattern 41 and the insulating pattern 42 of the touch electrode are positioned on the same layer, and a complete film layer is formed in the touch area of the touch substrate, namely, the patterns between the patterns are connected without gaps, so that the pattern 41 of the touch electrode does not generate a gradient angle, does not reflect external light, and improves the display effect of the touch display device with the touch substrate.
Referring to fig. 3A, fig. 3 is a top view of a touch substrate according to an embodiment of the invention, in the embodiment shown in fig. 3A, the touch substrate is a mutual capacitive touch substrate, the touch layer only includes a pattern of touch electrodes and an insulating pattern, the pattern of touch electrodes includes a pattern 411 of touch driving electrodes and a pattern 412 of touch sensing electrodes, as can be seen in fig. 3A, the pattern 411 of touch driving electrodes, the pattern 412 of touch sensing electrodes and the insulating pattern 42 are located on the same layer, and the three forms a complete film layer in a touch area of the touch substrate.
Of course, in other embodiments of the present invention, the touch substrate may be a self-capacitance touch substrate.
Preferably, in the embodiment of the present invention, the pattern 41 and the insulating pattern 42 of the touch electrode are formed by the same transparent semiconductor thin film layer, the pattern 41 of the touch electrode is formed by a portion of the transparent semiconductor thin film layer through a conductive process, and the insulating pattern 42 is formed by a portion of the transparent semiconductor thin film layer through an insulating process.
When the pattern of the touch layer includes only the pattern of the touch electrode and the insulating pattern, a part of the transparent semiconductor thin film layer becomes the pattern of the touch electrode and another part becomes the insulating pattern.
That is, when forming the pattern 41 of the touch electrode, it is only necessary to form a whole transparent semiconductor thin film layer without performing patterning processes such as exposure, development and etching, and then to convert the portion of the transparent semiconductor thin film layer where the pattern of the touch electrode is to be formed into a conductive material, and to convert the other portion of the transparent semiconductor thin film layer into an insulating material. The pattern 41 and the insulating pattern 42 of the formed touch electrode are combined together to form a complete film structure.
When the pattern of the touch layer includes the pattern of the touch electrode, the insulating pattern and the semiconductor pattern, a part of the transparent semiconductor thin film layer becomes the pattern of the touch electrode, a part becomes the insulating pattern, and a part remains unchanged as the semiconductor pattern.
Preferably, the transparent semiconductor thin film layer is formed of a transparent metal oxide semiconductor material. The transparent metal oxide semiconductor material may be InGaZnO, inGaO, ITZO or AlZnO or the like.
Preferably, the content of oxygen atoms in the conductive material formed by the conductive treatment of the transparent semiconductor thin film layer is 15% to 30%, and the content of oxygen atoms in the insulating material formed by the insulating treatment of the transparent semiconductor thin film layer is 70% to 85%.
The higher the content of oxygen atoms, the lower the conductivity, and the lower the content of oxygen atoms, the higher the conductivity.
Preferably, the electrical conductivity of the pattern 41 of the touch electrode is greater than 10 3 (Ωcm) -1 . The conductivity of the insulating pattern is less than 10 -10 (Ωcm) -1 。
Referring to fig. 3B, fig. 3B is a top view of a touch substrate according to another embodiment of the invention, in the embodiment shown in fig. 3B, the touch substrate is a mutual capacitive touch substrate, the touch layer includes a pattern of touch electrodes, an insulating pattern 42 and a semiconductor pattern 43, the pattern of touch electrodes includes a pattern 411 of touch driving electrodes and a pattern 412 of touch sensing electrodes, as can be seen in fig. 3B, the pattern 411 of touch driving electrodes, the pattern 412 of touch sensing electrodes, the insulating pattern 42 and the semiconductor pattern 43 are located on the same layer, and the four patterns form a complete film layer in a touch region of the touch substrate.
In the embodiment of the invention, the semiconductor pattern 43 is located between the pattern of the touch electrode and the insulating pattern 42, and the pattern of the touch electrode is not in direct contact with the insulating pattern 42, and the oxygen atom content of the semiconductor material forming the pattern of the semiconductor pattern 43 is located between the oxygen atom content of the conductor material forming the pattern of the touch electrode and the oxygen atom content of the insulating material forming the insulating pattern 42, so that the migration of oxygen atoms between the conductor material and the insulating material can be prevented, and the stability of the touch layer is improved.
Of course, in other embodiments of the present invention, the pattern 41 and the insulating pattern 42 of the touch electrode may be formed separately, for example, in the area where the pattern 41 of the touch electrode needs to be formed, the pattern 41 of the touch electrode is formed by a patterning process, the insulating pattern 42 is formed by a patterning process in the other touch area where the pattern 41 of the touch electrode and the other layer are formed, and the formed pattern 41 of the touch electrode and the insulating pattern 42 are combined together to form a complete film structure.
In the embodiment of the invention, the touch substrate may be an independent substrate, and is attached to the light emitting side of the color film substrate.
Alternatively, the touch substrate is a color film substrate, that is, the substrate 311 is a substrate of a color film substrate, and the pattern 41 and the insulating pattern 42 of the touch electrode are disposed on the color film substrate. Preferably, the pattern 41 and the insulating pattern 42 of the touch electrode are disposed on the light emitting side of the substrate of the color film substrate, i.e. the touch substrate in the embodiment of the invention is an on-cell type touch substrate.
The embodiment of the invention also provides a touch display device, which comprises the touch substrate in any embodiment.
Referring to fig. 4, in an embodiment of the invention, the touch display device is a liquid crystal display device, and includes an array substrate 11 and a color film substrate 31, and a pattern 41 and an insulating pattern 42 of a touch electrode are disposed on a light emitting side of a substrate of the color film substrate 31.
The embodiment of the invention also provides a manufacturing method of the touch substrate, which comprises the following steps: and forming a touch layer on a substrate, wherein the touch layer is a complete film layer in a touch area of the touch substrate, and the touch layer comprises a pattern of a touch electrode and an insulation pattern.
In some embodiments of the present invention, the touch layer may further include a semiconductor pattern.
Preferably, the step of forming the touch layer on a substrate includes:
forming a transparent semiconductor film layer on the substrate base plate;
and conducting a part of the transparent semiconductor film layer to form a pattern of the touch electrode, and conducting an insulating treatment to form the insulating pattern.
When the touch control layer further comprises a semiconductor pattern, a part of the transparent semiconductor film layer is not processed to form the semiconductor pattern.
In the embodiment of the invention, the sequence of the conducting treatment and the insulating treatment is not limited, and a part of the transparent semiconductor film layer can be conducted to form the pattern of the touch electrode first, and then the insulating treatment is conducted to a part of the transparent semiconductor film layer to form the insulating pattern. The insulating pattern may be formed by performing an insulating treatment on a part of the transparent semiconductor thin film layer, and then performing a conductive treatment on a part of the transparent semiconductor thin film layer, thereby forming the pattern of the touch electrode.
Preferably, the transparent semiconductor thin film layer is formed of a transparent metal oxide semiconductor material. The transparent metal oxide semiconductor material may be InGaZnO, inGaO, ITZO or AlZnO or the like.
Preferably, the content of oxygen atoms in the conductive material formed by the conductive treatment of the transparent semiconductor thin film layer is 15% to 30%, and the content of oxygen atoms in the insulating material formed by the insulating treatment of the transparent semiconductor thin film layer is 70% to 85%.
The higher the content of oxygen atoms, the lower the conductivity, and the lower the content of oxygen atoms, the higher the conductivity.
Preferably, the electrical conductivity of the pattern 41 of the touch electrode is greater than 10 3 (Ωcm) -1 . The conductivity of the insulating pattern is less than 10 -10 (Ωcm) -1 。
In an embodiment of the present invention, referring to fig. 5A to 5H, the steps of conducting a portion of the transparent semiconductor thin film layer, conducting an insulation process to another portion of the transparent semiconductor thin film layer, and forming the pattern of the touch electrode and the insulation pattern include:
step 51: referring to fig. 5A, a first photoresist layer 51 is formed on the transparent semiconductor thin film layer 40;
step 52: referring to fig. 5B, a mask is used to expose and develop the first photoresist layer 51 to form a first photoresist pattern 51a, where the first photoresist pattern 51a corresponds to the pattern of the touch electrode;
step 53: referring to fig. 5C, the transparent semiconductor thin film layer 40 covered with the first photoresist pattern 51a is subjected to an insulation treatment to form an insulation pattern 42;
preferably, the step of insulating the transparent semiconductor thin film layer includes: and treating the transparent semiconductor film layer covered with the first photoresist pattern in an oxidizing atmosphere at 100-300 ℃ for 30-120 min.
The oxidizing atmosphere comprises: oxygen or oxygen-containing plasma, and the like.
The transparent semiconductor is very sensitive to oxygen, and is formed byThe oxygen atom content is increased from 45 to 60 percent to 70 to 85 percent after the insulating treatment, the electric conduction characteristic is rapidly reduced, and the metal oxide insulator with the electric conductivity less than 10 is formed -10 (Ωcm) -1 。
Step 54: referring to fig. 5D, the first photoresist pattern 51a is stripped;
step 55: referring to fig. 5E, a second photoresist layer 52 is formed on the transparent semiconductor thin film layer 40;
step 56: referring to fig. 5F, a mask is used to expose and develop the second photoresist layer 52 to form a second photoresist pattern 52a, where the second photoresist pattern 52a corresponds to the insulating pattern 42;
step 57: referring to fig. 5G, the transparent semiconductor thin film layer 40 covered with the second photoresist pattern 52a is subjected to a conductive treatment to form a pattern 41 of the touch electrode;
preferably, the step of conducting the transparent semiconductor thin film layer 40 includes: and treating the transparent semiconductor film layer covered with the second photoresist pattern 52a in a reducing atmosphere at 100-300 ℃ for 30-120 min.
The reducing atmosphere comprises: hydrogen gas, hydrogen-containing plasma, or the like.
The transparent semiconductor film layer is reduced by oxygen atoms after conducting treatment, the oxygen atom content is reduced from 45-60% to 15-30%, and the transparent semiconductor film layer is formed into a metal conductive material with the conductivity of more than 10 3 (Ωcm) -1 。
Step 58: referring to fig. 5H, the second photoresist pattern 52a is stripped.
In another embodiment of the present invention, referring to fig. 6, the step of conducting a portion of the transparent semiconductor thin film layer, conducting an insulation process to another portion of the transparent semiconductor thin film layer, and forming the pattern of the touch electrode and the insulation pattern includes:
step 61: referring to fig. 6A, a first photoresist layer 61 is formed on the transparent semiconductor thin film layer 40;
step 62: referring to fig. 6B, a mask is used to expose and develop the first photoresist layer 61 to form a first photoresist pattern 61a, where the first photoresist pattern 61a corresponds to the insulation pattern;
step 63: referring to fig. 6C, conducting the transparent semiconductor thin film layer 40 covered with the first photoresist pattern 61a to form the pattern 41 of the touch electrode;
preferably, the step of conducting the transparent semiconductor thin film layer includes: and treating the transparent semiconductor film layer covered with the second photoresist pattern in a reducing atmosphere at 100-300 ℃ for 30-120 min.
The reducing atmosphere comprises: hydrogen gas, hydrogen-containing plasma, or the like.
The transparent semiconductor film layer is reduced by oxygen atoms after conducting treatment, the oxygen atom content is reduced from 45-60% to 15-30%, and the transparent semiconductor film layer is formed into a metal conductive material with the conductivity of more than 10 3 (Ωcm) -1 。
Step 64: referring to fig. 6D, the first photoresist pattern 61a is stripped;
step 65: referring to fig. 6E, a second photoresist layer 62 is formed on the transparent semiconductor thin film layer 40;
step 66: referring to fig. 6F, a mask is used to expose and develop the second photoresist layer 62 to form a second photoresist pattern 62a, where the second photoresist pattern 62a corresponds to the pattern of the touch electrode;
step 67: referring to fig. 6G, the insulating pattern 42 is insulated from the transparent semiconductor thin film layer covered with the second photoresist pattern 62 a;
preferably, the insulating treatment of the transparent semiconductor thin film layer 40 includes: and treating the transparent semiconductor film layer covered with the first photoresist pattern in an oxidizing atmosphere at 100-300 ℃ for 30-120 min.
The oxidizing atmosphere comprises: oxygen or oxygen-containing plasma, and the like.
The transparent semiconductor is very sensitive to oxygen, and has oxygen atoms after insulation treatmentThe content is increased, the oxygen atom content is increased from 45 to 60 percent to 70 to 85 percent, the electric conduction characteristic is sharply reduced, and the metal oxide insulator with the electric conductivity less than 10 is formed -10 (Ωcm) -1 。
Step 68: referring to fig. 6H, the second photoresist pattern 62a is stripped.
The two embodiments are different in that the first embodiment forms the pattern of the touch electrode first and then forms the insulating pattern, and the second embodiment forms the insulating pattern first and then forms the pattern of the touch electrode.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
Claims (10)
1. A touch substrate, comprising: the touch control device comprises a substrate base plate and a touch control layer arranged on the substrate base plate, wherein the touch control layer is a complete film layer in a touch control area of the touch control base plate, and the touch control layer comprises a pattern of a touch control electrode and an insulation pattern;
the pattern and the insulation pattern of the touch electrode are formed by the same transparent semiconductor film layer, the pattern of the touch electrode is formed by a part of the transparent semiconductor film layer through the conductive treatment, the insulation pattern is formed by a part of the transparent semiconductor film layer through the insulation treatment, the transparent semiconductor film layer is formed by a transparent metal oxide semiconductor material, the transparent metal oxide semiconductor material is InGaZnO, inGaO, ITZO or AlZnO, the content of oxygen atoms in the conductor material formed by the transparent semiconductor film layer through the conductive treatment is 15% -30%, and the content of oxygen atoms in the insulation material formed by the transparent semiconductor film layer through the insulation treatment is 70% -85%.
2. The touch substrate of claim 1, wherein the pattern of touch electrodesConductivity of more than 10 3 (Ωcm) -1 The conductivity of the insulating pattern is less than 10 -10 (Ωcm) -1 。
3. The touch substrate of claim 1, wherein the touch substrate is a color film substrate and the substrate is a substrate of the color film substrate.
4. The touch substrate of claim 3, wherein the pattern of touch electrodes and the insulating pattern are disposed on a light emitting side of the substrate.
5. The touch substrate of any one of claims 1-4, wherein the touch layer further comprises a semiconductor pattern.
6. A touch display device comprising the touch substrate according to any one of claims 1-5.
7. The manufacturing method of the touch substrate is characterized by comprising the following steps of:
forming a touch layer on a substrate, wherein the touch layer is a complete film layer in a touch area of the touch substrate, and the touch layer comprises a pattern of a touch electrode and an insulation pattern;
the step of forming a touch layer on a substrate includes:
forming a transparent semiconductor film layer on the substrate base plate;
conducting a part of the transparent semiconductor film layer to form a pattern of the touch electrode, conducting an insulating treatment to a part of the transparent semiconductor film layer to form the insulating pattern, wherein the transparent semiconductor film layer is formed by a transparent metal oxide semiconductor material;
the step of conducting the portion of the transparent semiconductor thin film layer, conducting the insulating portion of the transparent semiconductor thin film layer, and forming the pattern of the touch electrode and the insulating pattern includes:
forming a first photoresist layer on the transparent semiconductor film layer;
exposing and developing the first photoresist layer by using a mask plate to form a first photoresist pattern, wherein the first photoresist pattern corresponds to the pattern of the touch electrode or the insulating pattern;
performing insulation or conductor treatment on the transparent semiconductor film layer covered with the first photoresist pattern to form the insulation pattern or the pattern of the touch electrode;
stripping the first photoresist pattern;
forming a second photoresist layer on the transparent semiconductor film layer;
exposing and developing the second photoresist layer by using a mask plate to form a second photoresist pattern, wherein the second photoresist pattern corresponds to the insulating pattern or the pattern of the touch electrode;
conducting or insulating treatment is carried out on the transparent semiconductor film layer covered with the second photoresist pattern, so as to form a pattern or an insulating pattern of the touch electrode;
and stripping the second photoresist pattern.
8. The method of manufacturing a touch substrate according to claim 7, wherein the insulating the transparent semiconductor thin film layer comprises:
and processing the transparent semiconductor film layer covered with the first photoresist pattern or the second photoresist pattern in an oxidizing atmosphere at 100-300 ℃ for 30-120 min.
9. The method of manufacturing a touch substrate according to claim 7, wherein the step of conducting the transparent semiconductor thin film layer comprises:
and processing the transparent semiconductor film layer covered with the first photoresist pattern or the second photoresist pattern in a reducing atmosphere at 100-300 ℃ for 30-120 min.
10. The method of claim 7, wherein the touch layer further comprises a semiconductor pattern.
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| CN108227989B (en) * | 2018-01-02 | 2021-03-05 | 京东方科技集团股份有限公司 | Touch substrate and preparation method thereof, metal mask plate and display device |
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