CN106498359B - Magnetic control co-sputtering prepares the method that magnetization Haas strangles alloy firm in face - Google Patents
Magnetic control co-sputtering prepares the method that magnetization Haas strangles alloy firm in face Download PDFInfo
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- CN106498359B CN106498359B CN201611147545.0A CN201611147545A CN106498359B CN 106498359 B CN106498359 B CN 106498359B CN 201611147545 A CN201611147545 A CN 201611147545A CN 106498359 B CN106498359 B CN 106498359B
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 49
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 38
- 239000000956 alloy Substances 0.000 title claims abstract description 38
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000005415 magnetization Effects 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 22
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 12
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 239000007769 metal material Substances 0.000 claims description 39
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 17
- 239000004615 ingredient Substances 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 235000019441 ethanol Nutrition 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- 230000008859 change Effects 0.000 abstract description 2
- 229910001291 heusler alloy Inorganic materials 0.000 description 6
- 230000006870 function Effects 0.000 description 3
- 229910019974 CrSi Inorganic materials 0.000 description 2
- 229910016583 MnAl Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910000734 martensite Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910001285 shape-memory alloy Inorganic materials 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Magnetic control co-sputtering prepares the method that magnetization Haas strangles alloy firm in face, sequentially includes the following steps: (1) using SiO2The sample stage being sent into after ultrasonic cleaning is handled as substrate material in magnetron sputtering vacuum chamber；(2) required target is put on the target position of magnetron sputtering vacuum chamber；(3) it vacuumizes；(4) Haas is prepared in substrate material surface by magnetron sputtering and strangles alloy firm, or Cr film first is made in substrate material surface, then prepare Haas in substrate material surface and strangle alloy firm.The present invention uses magnetic control co-sputtering method, and the high purity films of preparation are parallel to magnetic anisotropy, and roughness and coercivity change significantly, and preparation time is short, and purity is high, equipment is simple, easy to operate, at low cost.
Description
Technical field
The invention belongs to field of magnetic material, in particular to for magnetic memory device and a kind of magnetic control of various kinds of sensors
Cosputtering prepares the method that magnetization Haas strangles alloy firm in face.
Background technique
In traditional microelectronics, traditional electronics device is usually the charge characteristic for utilizing electronics, is not consider
The spin states of electronics.But with the rapid development of computer science, the requirement of the volume of computer chip is constantly
Reduce, and the requirement of memory capacity is also constantly expanding, the conventional electronics of the charge characteristic based on electronics oneself be not able to satisfy
The requirement of scientific development and the mankind.Under the promotion of science and demand, the spin properties of electronics are closed by scientist and researchers
It infuses and is used to further improve the speed of information processing and storage density.In this context, new
One spintronics of section is born.Spin electric device is greatly increased since the spin properties to electronics are utilized
The service performance of electronic device, this kind of device has that non-volatile, data processing speed is fast, low energy consumption and that integrated level is high is high-quality
Characteristic.Although spin electric device has so many high-performance, there is higher requirement on actual materials demand,
It requires material to have high spinning polarizability, i.e., the downward electron number that spins up and spin is respectively provided near fermi level
Mesh is uneven, and more uneven more have.
Heusler(Haas strangle) alloy be a kind of high-sequential the intermetallic compound with body-centered cubic structure, one
As be divided into two kinds of alloys of Full-Heusler and Half-Heusler, chemical general formula is respectively X2YZ and XYZ, wherein X
Different transiting group metal elements are represented with Y, Z represents sp (the III, the IV, V main group) element.
At present the result of study of Heusler alloy show the complicated band structure that Heusler alloy has be by
There is the transition element of the d electron orbit of local to there is the major element of the sp electron orbit of non-local to be composed again.Together
When, and since the Occupation of Heusler alloy and its physical characteristic are closely related, make the alloy of same sample ingredient by different
Preparation method and heat treatment process influence whether the degree of order of crystal structure and atom, and then regulate and control its electronic structure, magnetic
Property, phase transformation etc..These factors make Heusler alloy generate many new function materials, such as ferromagnetic shape memory alloy with
Elastic material, giant magnetic resistor material, superconductor, magnetic field driven martensitic transformation material, semi-metallic, thermoelectric material with
And many new function materials such as topological insulator.Just because of so many performance is contained in Heusler alloy, make its
Possess huge application value and prospect in the exploitation of new material, and becomes one of the key areas for exploring new function material；
Simultaneously because the high ordered structure of Heusler alloy, can study its electronic structure with the calculating of first principle system for us
It is greatly convenient to provide.
Summary of the invention
The present invention is to provide a kind of magnetic control in order to solve the above-mentioned shortcoming that above-mentioned Haas strangles alloy preparation method and splash altogether
The method that magnetization Haas strangles alloy firm in the preparation face of penetrating, using three target co-sputtering of Co target, Mn target and Al target, by adjusting three targets
Sputtering power adjust the thickness and ingredient of growing film well, so that the superconductivity of film is controlled, in being in
The ferrimagnet of temperature and absolutely spin polarizability answers it in Spin Valve and magnetic tunnel-junction as ferromagnetic layer
Used time improves the magneto-resistance effect of device, realizes the magnetic storage density of superelevation,
One of method of the invention the following steps are included:
1, using SiO2As substrate material, by substrate material after ultrasonic cleaning is handled, passed by passing specimen holder
It is sent on the sample stage in magnetron sputtering vacuum chamber；
2, required target is put on the target position of magnetron sputtering vacuum chamber；The target material be respectively purity >=
99.999% metal material X、Y and Z；The metal material X is Cu, Ni or Co；The metal material Y be Fe, Cr or
Mn, the metal material Z are Al, Si, Ge or B；
3, vacuum degree≤2 × 10 of magnetron sputtering chamber are evacuated to-5Pa；
4, by magnetic control co-sputtering substrate material surface prepare Haas strangle alloy firm, working gas be purity >=
99.999% high-purity argon gas, 0.01 ~ 0.4Pa of sputtering pressure, deposition rate be 5 ~ 10nm/min, target to substrate material away from
Haas is made in substrate material surface and strangles alloy firm from for 20 ~ 30cm, sputtering time 5 ~ 10 min of setting.
Method of the invention two the following steps are included:
1, using SiO2As substrate material, by substrate material after ultrasonic cleaning is handled, passed by passing specimen holder
It is sent on the sample stage in magnetron sputtering vacuum chamber；
2, required target is put on the target position of magnetron sputtering vacuum chamber；The target material be respectively purity >=
99.999% metal material Cr, X, Y and Z；The metal material X is Cu, Ni or Co；The metal material Y is Fe, Cr
Or Mn, the metal material Z are Al, Si, Ge or B；
3, vacuum degree≤2 × 10 of magnetron sputtering chamber are evacuated to-5Pa；
4, by magnetron sputtering substrate material surface prepare Haas strangle alloy firm, working gas be purity >=
99.999% high-purity argon gas, 0.01 ~ 0.4Pa of sputtering pressure, deposition rate be 5 ~ 10nm/min, target to substrate material away from
From for 20 ~ 30cm, 1 ~ 2 min of sputtering time, Cr film is made in substrate material surface；
5, by magnetic control co-sputtering substrate material surface prepare Haas strangle alloy firm, working gas be purity >=
99.999% high-purity argon gas, 0.01 ~ 0.4Pa of sputtering pressure, deposition rate be 5 ~ 10nm/min, target to substrate material away from
From for 20 ~ 30cm, 5 ~ 10 min of sputtering time, Haas is made in substrate material surface and strangles alloy firm.
The step of above-mentioned ultrasonic cleaning processing are as follows: substrate material is successively respectively placed in order acetone, ethyl alcohol and
In deionized water, and with ultrasonic cleaning, it is 15 ~ 20min that the time is cleaned by ultrasonic in every kind of liquid, then with being dried with nitrogen,
It is heat-treated 8 ~ 10min under the conditions of 200 ± 10 DEG C, makes substrate material surface removing residues.
In above two method, the ingredient that Haas strangles alloy firm is X2YZ, with a thickness of 48 ~ 56nm.
In the two of above-mentioned method, Cr film with a thickness of 9 ~ 12nm.
Above-mentioned SiO2Purity >=99.9%.
The invention has the benefit that being passed through high-purity argon gas in preparation process using magnetic control co-sputtering method, effect is Ar
Target is bombarded, the high purity films of preparation are parallel to magnetic anisotropy, and roughness and coercivity change significantly, when preparation
Between it is short, purity is high, equipment is simple, easy to operate, at low cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that Haas prepared by the embodiment of the present invention 1 strangles alloy firm；
Fig. 2 is the X-ray polycrystalline diffraction pattern that Haas prepared by the embodiment of the present invention 1 strangles alloy firm；
Fig. 3 is the structural schematic diagram that Haas prepared by the embodiment of the present invention 2 strangles alloy firm；
Fig. 4 is the X-ray polycrystalline diffraction pattern that Haas prepared by the embodiment of the present invention 2 strangles alloy firm；
Fig. 5 is different substrate temperature and the magnetization curve figure whether there is or not Cr film in the embodiment of the present invention；
Fig. 6 is different substrate temperature and the surface roughness curve figure whether there is or not Cr film in the embodiment of the present invention.
Specific embodiment
The metal material (Cr, X, Y and Z) of purity >=99.999% used in the embodiment of the present invention is commercial products.
The X-ray polycrystalline diffraction device model ULTIMA IV(Japan used in the embodiment of the present invention).
The equipment that test magnetization curve uses in the embodiment of the present invention is vibrating specimen magnetometer, model Lake Shore
7410 VSM。
Test surfaces roughness uses atomic force microscope, model FM-Nanoview 6600 in the embodiment of the present invention.
The SiO of substrate material purity >=99.9% used in the embodiment of the present invention2For commercial products.
When carrying out magnetron sputtering in the embodiment of the present invention, the flow 30SCCM of high-purity argon gas, sample stage rotational velocity is
40rpm, 20 ~ 40W of sputtering power.
The substrate material specification used in the embodiment of the present invention is 1cm × 1cm.
The step of ultrasonic cleaning is handled in the embodiment of the present invention are as follows: substrate material is successively respectively placed in third in order
In ketone, ethyl alcohol and deionized water, and with ultrasonic cleaning, it is 15 ~ 20min that the time is cleaned by ultrasonic in every kind of liquid, is then used
It is dried with nitrogen, 8 ~ 10min is heat-treated under the conditions of 200 ± 10 DEG C, makes substrate material surface removing residues.
Embodiment 1
Using SiO2As substrate material, by substrate material after ultrasonic cleaning is handled, by passing specimen holder transmission
Enter on the sample stage in magnetron sputtering vacuum chamber；
Required target is put on the target position of magnetron sputtering vacuum chamber；The target material be respectively purity >=
99.999% metal material X、Y and Z；The metal material X is Co；The metal material Y is Mn, the metal material
Material Z is Al；
It is evacuated to vacuum degree≤2 × 10 of magnetron sputtering chamber-5Pa；
By magnetic control co-sputtering substrate material surface prepare Haas strangle alloy firm, working gas be purity >=
The distance of 99.999% high-purity argon gas, sputtering pressure 0.01Pa, deposition rate 5nm/min, target to substrate material is
20cm, sputtering time set 10 min, and Haas is made in substrate material surface and strangles alloy firm, ingredient Co2MnAl, with a thickness of
50nm, structure as shown in Figure 1, X-ray polycrystalline diffraction patterns as shown in Fig. 2, magnetization curve as shown in figure 5, rough surface is write music
Line is as shown in Figure 6.
Embodiment 2
Using SiO2As substrate material, by substrate material after ultrasonic cleaning is handled, by passing specimen holder transmission
Enter on the sample stage in magnetron sputtering vacuum chamber；
Required target is put on the target position of magnetron sputtering vacuum chamber；The target material be respectively purity >=
99.999% metal material Cr, X, Y and Z；The metal material X is Co；The metal material Y is Mn, the metal
Material Z is Al；
It is evacuated to vacuum degree≤2 × 10 of magnetron sputtering chamber-5Pa；
Haas is prepared in substrate material surface by magnetron sputtering and strangles alloy firm, and working gas is purity >=99.999%
High-purity argon gas, sputtering pressure 0.01Pa, deposition rate 5nm/min, the distance of target to substrate material is 20cm, when sputtering
Between 2 min, Cr film is made in substrate material surface, with a thickness of 10nm；
By magnetic control co-sputtering substrate material surface prepare Haas strangle alloy firm, working gas be purity >=
The distance of 99.999% high-purity argon gas, sputtering pressure 0.01Pa, deposition rate 5nm/min, target to substrate material is
20cm, 10 min of sputtering time are made Haas in substrate material surface and strangle alloy firm, ingredient Co2MnAl, with a thickness of
50nm, structure as shown in figure 3, X-ray polycrystalline diffraction patterns as shown in figure 4, magnetization curve as shown in figure 5, rough surface is write music
Line is as shown in Figure 6.
Embodiment 3
With embodiment 1, difference is method:
(1) metal material X is Ni；The metal material Y is Cr, and the metal material Z is Si；
(2) sputtering pressure 0.1Pa, deposition rate 6nm/min, the distance of target to substrate material are 24cm, when sputtering
Between set 8 min, substrate material surface be made Haas strangle alloy firm, ingredient Ni2CrSi, with a thickness of 48nm.
Embodiment 4
With embodiment 1, difference is method:
(1) metal material X is Cu；The metal material Y is Fe, and the metal material Z is Ge；
(2) sputtering pressure 0.2Pa, deposition rate 8nm/min, the distance of target to substrate material are 28cm, when sputtering
Between set 7min, substrate material surface be made Haas strangle alloy firm, ingredient Cu2FeGe, with a thickness of 56nm.
Embodiment 5
With embodiment 2, difference is method:
(1) metal material X is Ni；The metal material Y is Cr, and the metal material Z is Si；
(2) sputtering pressure 0.1Pa, deposition rate 6nm/min, the distance of target to substrate material are 24cm, when sputtering
Between 1.5 min, Cr film is made in substrate material surface, with a thickness of 9nm；
(3) sputtering pressure 0.1Pa, deposition rate 6nm/min, the distance of target to substrate material are 24cm, when sputtering
Between 8min, substrate material surface be made Haas strangle alloy firm, ingredient Ni2CrSi, with a thickness of 48nm.
Embodiment 6
With embodiment 2, difference is method:
(1) metal material X is Cu；The metal material Y is Fe, and the metal material Z is Ge；
(2) sputtering pressure 0.2Pa, deposition rate 8nm/min, the distance of target to substrate material are 28cm, when sputtering
Between 1.5 min, Cr film is made in substrate material surface, with a thickness of 12nm；
(3) sputtering pressure 0.2Pa, deposition rate 8nm/min, the distance of target to substrate material are 28cm, when sputtering
Between 7 min, substrate material surface be made Haas strangle alloy firm, ingredient Cu2FeGe, with a thickness of 56nm.
Embodiment 7
With embodiment 1, difference is method:
(1) metal material X is Cu；The metal material Y is Mn, and the metal material Z is B；
(2) sputtering pressure 0.4Pa, deposition rate 10nm/min, the distance of target to substrate material are 30cm, when sputtering
Between set 5 min, substrate material surface be made Haas strangle alloy firm, ingredient Cu2MnB, with a thickness of 50nm.
Embodiment 8
With embodiment 2, difference is method:
(1) metal material X is Cu；The metal material Y is Fe, and the metal material Z is B；
(2) sputtering pressure 0.4Pa, deposition rate 10nm/min, the distance of target to substrate material are 30cm, when sputtering
Between 1 min, Cr film is made in substrate material surface, with a thickness of 10nm；
(3) sputtering pressure 0.4Pa, deposition rate 10nm/min, the distance of target to substrate material are 30cm, when sputtering
Between 5min, substrate material surface be made Haas strangle alloy firm, ingredient Cu2FeB, with a thickness of 50nm.
Claims (2)
1. the method for magnetization Haas Le alloy firm in a kind of magnetic control co-sputtering preparation face, it is characterised in that according to the following steps into
Row:
(1) SiO is used2As substrate material, by substrate material after ultrasonic cleaning is handled, by pass specimen holder transmit into
On sample stage in magnetron sputtering vacuum chamber；
(2) required target is put on the target position of magnetron sputtering vacuum chamber；The target material be respectively purity >=
99.999% metal material Cr, X, Y and Z；The metal material X is Ni；The metal material Y is Fe or Cr, described
Metal material Z is B；
(3) vacuum degree≤2 × 10 of magnetron sputtering chamber are evacuated to-5Pa；
(4) Haas is prepared in substrate material surface by magnetron sputtering and strangles alloy firm, working gas is purity >=99.999%
High-purity argon gas, 0.01 ~ 0.4Pa of sputtering pressure, deposition rate are 5 ~ 10nm/min, the distance of target to substrate material for 20 ~
Cr film is made in substrate material surface in 30cm, 1 ~ 2 min of sputtering time；The Cr film with a thickness of 9 ~ 12nm；
(5) Haas is prepared in substrate material surface by magnetic control co-sputtering and strangles alloy firm, working gas is purity >=99.999%
High-purity argon gas, 0.01 ~ 0.4Pa of sputtering pressure, deposition rate is 5 ~ 10nm/min, the distance of target to substrate material for 20 ~
30cm, 5 ~ 10 min of sputtering time are made Haas in substrate material surface and strangle alloy firm；The Haas strangles alloy firm
Ingredient is X2YZ, with a thickness of 48 ~ 56nm.
2. the method that magnetization Haas strangles alloy firm in magnetic control co-sputtering preparation according to claim 1 face, feature exist
In the step of ultrasonic cleaning is handled are as follows: substrate material is successively respectively placed in acetone, ethyl alcohol and deionized water in order
In, and with ultrasonic cleaning, it is 15 ~ 20min that the time is cleaned by ultrasonic in every kind of liquid, then with being dried with nitrogen, 200 ± 10
It is heat-treated 8 ~ 10min under the conditions of DEG C, makes substrate material surface removing residues.
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| CN108411272A (en) * | 2018-05-30 | 2018-08-17 | 上海电机学院 | A kind of preparation method of bearing AlCrCuFeNi systems high-entropy alloy coating |
| CN109913816B (en) * | 2019-04-29 | 2021-03-02 | 天津城建大学 | Temperature gradient magnetocaloric material and preparation method thereof |
| CN110484802B (en) * | 2019-08-30 | 2020-11-24 | 广州大学 | Ferromagnetic shape memory alloy with nano eutectic lamellar structure |
| CN111549317B (en) * | 2020-05-13 | 2022-08-16 | 中国科学院空天信息创新研究院 | Cobalt-based Heusler alloy structure and preparation method for improving ordering of cobalt-based Heusler alloy structure |
| CN112962075A (en) * | 2021-02-04 | 2021-06-15 | 西南交通大学 | Method for preparing second-generation high-temperature superconducting tape by three-target co-sputtering |
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| JP4541861B2 (en) * | 2004-12-09 | 2010-09-08 | 株式会社アルバック | Method for forming Heusler alloy film |
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