CN106487264A - Semiconductor device and electronic device - Google Patents
Semiconductor device and electronic device Download PDFInfo
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- CN106487264A CN106487264A CN201610670696.8A CN201610670696A CN106487264A CN 106487264 A CN106487264 A CN 106487264A CN 201610670696 A CN201610670696 A CN 201610670696A CN 106487264 A CN106487264 A CN 106487264A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L15/00—Methods, circuits, or devices for controlling the traction-motor speed of electrically-propelled vehicles
- B60L15/02—Methods, circuits, or devices for controlling the traction-motor speed of electrically-propelled vehicles characterised by the form of the current used in the control circuit
- B60L15/08—Methods, circuits, or devices for controlling the traction-motor speed of electrically-propelled vehicles characterised by the form of the current used in the control circuit using pulses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L3/00—Electric devices on electrically-propelled vehicles for safety purposes; Monitoring operating variables, e.g. speed, deceleration or energy consumption
- B60L3/0023—Detecting, eliminating, remedying or compensating for drive train abnormalities, e.g. failures within the drive train
- B60L3/0061—Detecting, eliminating, remedying or compensating for drive train abnormalities, e.g. failures within the drive train relating to electrical machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L3/00—Electric devices on electrically-propelled vehicles for safety purposes; Monitoring operating variables, e.g. speed, deceleration or energy consumption
- B60L3/12—Recording operating variables ; Monitoring of operating variables
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L50/00—Electric propulsion with power supplied within the vehicle
- B60L50/50—Electric propulsion with power supplied within the vehicle using propulsion power supplied by batteries or fuel cells
- B60L50/51—Electric propulsion with power supplied within the vehicle using propulsion power supplied by batteries or fuel cells characterised by AC-motors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L7/00—Electrodynamic brake systems for vehicles in general
- B60L7/10—Dynamic electric regenerative braking
- B60L7/14—Dynamic electric regenerative braking for vehicles propelled by ac motors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
- H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
- H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
- H02P27/08—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
- H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
- H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
- H02P27/08—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation
- H02P27/085—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation wherein the PWM mode is adapted on the running conditions of the motor, e.g. the switching frequency
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P29/00—Arrangements for regulating or controlling electric motors, appropriate for both AC and DC motors
- H02P29/02—Providing protection against overload without automatic interruption of supply
- H02P29/032—Preventing damage to the motor, e.g. setting individual current limits for different drive conditions
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L2210/00—Converter types
- B60L2210/40—DC to AC converters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L2240/00—Control parameters of input or output; Target parameters
- B60L2240/40—Drive Train control parameters
- B60L2240/42—Drive Train control parameters related to electric machines
- B60L2240/427—Voltage
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L2240/00—Control parameters of input or output; Target parameters
- B60L2240/40—Drive Train control parameters
- B60L2240/42—Drive Train control parameters related to electric machines
- B60L2240/429—Current
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
- G01R19/16538—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies
- G01R19/16547—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies voltage or current in AC supplies
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/40—Testing power supplies
- G01R31/42—AC power supplies
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/64—Electric machine technologies in electromobility
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/70—Energy storage systems for electromobility, e.g. batteries
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/72—Electric energy management in electromobility
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Transportation (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
The adjustment of drive control detected based on transformer voltage needs circulation time, and is therefore difficult to the high speed processing of the adjustment.Semiconductor device includes the driving force control circuit of the driving force of the drive circuit of driving power semiconductor devices and control drive circuit.Drive circuit stops driving power semiconductor devices based on the abnormal current detected from the sensing electric current of power semiconductor.Driving force control circuit controls the driving force of drive circuit based on the normal current detected from the sensing electric current of power semiconductor.
Description
Cross-reference to related applications
Japanese patent application No.2015-172625 of the application based on the submission on the 2nd of September in 2015, in its entire disclosure
Hold, including specification, accompanying drawing and summary, be incorporated herein by reference.
Technical field
It relates to semiconductor device, and the semiconductor suitable for driving power semiconductor devices is integrated
Circuit devcie, such as insulated gate bipolar transistor (IGBT).
Background technology
Power supply of the motor (motor) as such as hybrid vehicle (HEV) or electric automobile (EV), in hybrid power
In automobile, motor is combined together with internal combustion engine (gasoline engine).When the motor is driven, the power for DC being converted into AC turns
Changing device (phase inverter) is used to obtain predetermined moment of torsion and predetermined power provides frequency.In the phase inverter
In, drive signal is controlled and the driving current of motor is monitored (for example, with reference to unexamined Japan Patent Shen by current detector
No.2011-97812 please be disclose).
For example when the current detector using the A/D converter in such as transformer and control circuit is come from each phase
When detecting normal current in motor drive current and the normal current being used for motor drive control, it is difficult to realize at a high speed
Reason, the A/ because current detecting needs circulation time, within the circulation time, in the output voltage experience control circuit of transformer
D is changed and is adjusted drive control based on the result.
By the following description to specification and drawings, other problems and novel feature will be apparent from.
Content of the invention
A kind of general introduction of typical case of the disclosure is described briefly below.
Semiconductor device, including：Driving force control circuit, which is based on the sensing from power semiconductor
The normal current detected in electric current is controlling the driving force of drive circuit.
According to above-mentioned semiconductor device, it is possible to achieve high speed processing.
Description of the drawings
Fig. 1 is the block diagram for explanation according to the electric motor system of comparative example.
Fig. 2 be for illustrate IGBT sensing electric current diagram.
Fig. 3 is the block diagram for explanation according to the electric motor system of the first example.
Fig. 4 is the block diagram of the electronic device of a part for the electric motor system for being shown as Fig. 3.
Fig. 5 be for the block diagram of the driver IC in Fig. 4 is described.
Fig. 6 be for the circuit diagram of the current mirroring circuit in Fig. 5 is described.
Fig. 7 be for the block diagram of the configuration of the driving force control circuit in Fig. 5 is described.
Fig. 8 be for the sequential chart of the control of the control driving force control circuit in Fig. 5 is described.
Fig. 9 be for explanation according to the IGBT of the second example and the block diagram of driver IC.
Figure 10 be for the diagram of the IGBT in Fig. 9 is described.
Figure 11 be for explanation according to the driver IC of the 3rd example and the block diagram of control circuit.
Figure 12 be for the block diagram of the driving force control circuit in Figure 11 is described.
Figure 13 be for the block diagram of the driving force control circuit in Figure 11 is described.
Figure 14 is the block diagram for explanation according to the semiconductor device of embodiment.
Specific embodiment
The example of embodiment, example and modification below with reference to Description of Drawings.In the following description, with same reference
Symbol represents same part and may eliminate the description of redundancy.
First, the prior art (referred to below as comparative example) before the disclosure that inventor studied is described.
Fig. 1 shows the block diagram of the electric motor system according to comparative example.Fig. 2 be for the sensing electric current of IGBT is described
Diagram.Electric motor system 1R includes three-phase motor 10, negater circuit 20, driver IC 30R and control circuit 40R.Three-phase
Motor 10 includes three transformers (coil) 11.Transformer can be two, because if the electric current of two-phase can be detected, just
The calculating of the electric current for each phase can be carried out.Inverter circuit 20 has the three-phase by six power semiconductors 21
Bridge is configured.As shown in Fig. 2 power semiconductor 21 includes IGBT 22, the IGBT 22 is switching transistor.IGBT 22 is wrapped
Include gate terminal G, the emitter terminal E of collector terminal C, it is allowed to driving current flowing and allow the sense of sensing electric current flowing
Survey terminal SE.Driver IC 30R driving power semiconductor devices 21, and control circuit 40R control driver IC 30R.
For drive motor, in the inverter circuit using IGBT 22, while monitoring driving electric current, it is necessary to
Control drives the drive signal (pwm signal) of IGBT 22.With regard to the monitoring of electric current, 2 points are performed below：
(1) motor drive current of each phase is for example changed by the A/D using such as transformer 11 and control circuit 40R
The mode of device is come and monitored, and the motor drive current of each phase is used for detecting the normal current of control drive motor.
(2) sensing electric current is for example by using the A/D converter in such as voltage comparator circuit and driver IC 30R
Mode and monitored, and described sensing electric current be primarily used to detect overload current with when there is abnormal current to occur cut-out drive
Dynamic signal.
The driving current of IGBT 22 is emitter current (Ie), and senses electric current and be referred to as mirror currents (I γ),
Because the sensing electric current is the electric current of the current mirroring circuit in IGBT 22.Emitter current (Ie) and mirror currents (I γ)
Ratio (Ie/I γ) is referred to as current mirror ratio.Current mirror ratio is selected as about 1000 to about 10000.Assume the normal of motor
Driving current is about 400A, and rated current is about 1600A.Therefore, determined more than rated current using sensing electric current
In the case of the exception of value, the current detection voltage (Vab) in abnormal current detection is as follows, it is assumed that current mirror ratio for 4000 and
Resistance (Rab) for current detecting is 5 Ω.
Vab=(1600A/4000) 5 Ω of x=2V
Meanwhile, the current detection voltage (Vn) in normal operating is as follows：
Vn=(400/4000) 5 Ω of x=0.5V
Further, in the low-speed range of motor, dynamic range very little, because driving current is little.
When the rotation of motor starts or in the low-speed range of motor, it is desirable to not only increase the PWM as drive signal
Signal, also it is desirable to increase the electric current of drive signal to improve driving force.However, in current detecting described in (1), becoming
The output voltage of depressor can experience the A/D conversion in control circuit 40R, and drive control is adjusted based on A/D transformation result
Whole, so as to need circulation time and therefore high speed processing be difficult.Further, with by sense described in (2)
Electric current is surveyed come in the case of executing control, due to employing the loop of suitable abnormal current detection, it is difficult to obtain enough gains.
<Embodiment>
Figure 14 is the block diagram for explanation according to the semiconductor device of embodiment.Semiconductor device
30 include drive circuit 31 and driving force control circuit 34,31 driving power semiconductor devices 21 of drive circuit, driving force
Control circuit 34 controls the driving force of drive circuit 31.Drive circuit 31 is based on the sensing electric current from power semiconductor 21
In the abnormal current that detects stopping driving power semiconductor devices 21.Driving force control circuit 34 is based on and partly leads from power
In the sensing electric current of body device 21, the normal current that detects is controlling the driving force of drive circuit 31.
The driving force of power semiconductor is enhanced so that for example drive the motor with high torque to be possibly realized.
First example
(electric motor system)
Fig. 3 shows the block diagram of the electric motor system according to the first example.The electrical motor systems 1 of Fig. 3 include three-phase
Motor 10,20, six driver ICs 30 of inverter circuit using six power semiconductors, control circuit 40 and DC electricity
Source 50.By negater circuit 20, the part that six driver ICs 30 and control circuit 40 constitute is referred to as electronic device 2.Work as driving
During automobile or the like, inverter circuit 20 controls the break-make of the switching transistor 22 in inverter circuit 20 to allow the electric current can
Each phase of three-phase motor 10 is flowed to the voltage from D/C power (DC) 50, passes through the switch so as to the speed of automobile or the like
Frequency and be changed.When braking to automobile or the like, inverter circuit 20 is synchronized with each phase of three-phase motor 10
Produced voltage carrys out the break-make of controlling switch transistor 22, to execute the so-called rectifying operation for obtaining D/C voltage, so as to again
Life is performed.
Three-phase motor 10 includes the permanent magnet as rotor and the coil as armature.Threephase armature winding (U-phase, V- phase
And W-phase) 120 degree are spaced apart in triangle connection.Electric current flows through three windings of U-phase, V- phase and W-phase all the time.Three-phase
Motor 10 includes the current detector 11 of such as transformer and angular speed and position detector 12.
Inverter circuit 20 defines the bridge circuit of U-phase, V- phase and W-phase by power semiconductor.U-phase bridge electricity
Three-phase motor 10 is coupled at the Coupling point between power semiconductor 21U and power semiconductor 21X in road.V- phase bridge
Circuit is coupled to three-phase motor 10 at the Coupling point between power semiconductor 21V and power semiconductor 21Y.W-phase
Bridge circuit is coupled to three-phase motor 10 at the Coupling point between power semiconductor 21W and power semiconductor 21Z.Cause
Identical in configuration with 21Z for power semiconductor 21U, 21V, 21W, 21X, 21Y, they may be collectively referred to as power and partly lead
Body device 21.Power semiconductor 21 is by the switching semiconductor (hereinafter referred IGBT) 22 for including to configure by IGBT and temperature
The semiconductor chip of detection diode D1 and the semiconductor chip including flywheel diode D2 are formed, and diode D2 is parallel for the flywheel
It is coupled between the emitter and collector of IGBT22.Flywheel diode D2 be coupled as alloing electric current with flow through IGBT's
The contrary direction flowing of the sense of current.Preferably, semiconductor core IGBT22 and temperature detection diode D1 being formed thereon
Piece is sealed in same encapsulation with the semiconductor chip that flywheel diode D2 is formed thereon.Flywheel diode D2 can be formed in
On IGBT22 and temperature detection diode D1 identical semiconductor chip.
Driver IC 30 includes generation drive as the first semiconductor device in a Semiconductor substrate
The drive circuit (driver) 31, current detection circuit (current detecting) 32 of the signal of the grid of dynamic IGBT 22, protection detection electricity
Road (protection detection) 33 and driving force control circuit (driving force controller) 34.Control circuit 40 is used as the second semiconductor
IC-components, include CPU 41, pwm circuit (PWM) 42 and I/O interface (I/O IF) 43 in a Semiconductor substrate
And formed by such as micro computer unit (MCU).CPU 41 is transported according to the program being stored in nonvolatile memory
OK, the nonvolatile memory of such as flash memory (not shown) be erasable except and rewrite.
(driver IC, control circuit)
Fig. 4 is the block diagram of the electronic device of a part for the electric motor system being shown as in Fig. 3.Driver IC 30
Including drive circuit 31, current detection circuit 32, protection detection circuit 33, isolator 34 and driving force control circuit 35.Electricity
Current detection circuit 32 includes that current amplification circuit (electric current AMP) 32-1 for detecting abnormal current and the electric current of detection normal current are put
Big circuit (electric current AMP) 32-2.Current amplification circuit (electric current AMP) 32-1 is converted into voltage (V1) by electric current is sensed, and protects
Shield detection circuit 33 detects abnormal current based on the voltage.Testing result is sent to drive circuit 31 to cut off IGBT 22
Drive signal.Equally, testing result is sent to CPU 41 by the I/O interface 44 of isolator 34 and control circuit 40.Electricity
Normal current is converted into voltage (V2) by current amplifier (electric current AMP) 32-2.The voltage is sent to driving force control electricity
Road 35, controls the driving force of drive circuit 31 so as to driving force control circuit 35.Isolator 34 is transmitted by magnetic coupling
Need the signal transmitted between driver IC 30 and control circuit 40.Isolator 34 passes through with the formation of interlayer film opposing connection line
The mode of on-chip transformer insulation is forming.
Fig. 5 be for illustrating the block diagram of the driver IC in Fig. 4.Current detection circuit 32 is by current mirroring circuit (current mirror)
321 form, and resistor 322 and 323 is respectively coupled to terminal T1 and T2.Electric current (I γ) is divided into different by current mirroring circuit 321
Normal electric current (I γ 1) and normal current (I γ 2), the electric current (I γ) are flowed from current-sense terminal NE of IGBT 22 via terminal T3
To current mirroring circuit 32.Current mirror ratio and the detection resistance for being suitable to normal current detection and abnormal current detection is set.Assume to use
It is RS1 in the resistance value of the resistor 322 of detection abnormal current, the resistance value for detecting the resistor 323 of normal current is
RS2, the voltage for detecting abnormal current are V1, and the voltage for detecting normal current is V2, then：
V1=I γ 1x RS1
V2=I γ 2x RS2
Protection detection circuit 33 includes comparator 331, generating circuit from reference voltage 332 and wave filter 333.Comparator 331
The abnormal current detection voltage (V1) of its reversed input terminal will be input to via wave filter (wave filter) 333 with to be input to which non-
The reference voltage (VREF1) of the generating circuit from reference voltage 332 of reversed input terminal is compared, also, when V1 is more than VREF1
When, detect abnormal current and output abnormality current signal (ABN).
Drive circuit 31 includes driver 311 and door 312 and state retaining circuit 313.State retaining circuit 313 keeps
The abnormal current signal (ABN) detected by monitoring for protection circuit 33.When abnormal current signal (ABN) shows to occur abnormal,
312 output is set to low to cut off the drive signal (DRV) from terminal T4 input by state retaining circuit 313.Abnormal electric
Stream signal (ABN) show without exception occur in the case of, state retaining circuit 313 is allowed drive signal (DRV) warp with door 312
By its transmission.Voltage control or current control based on driving force control circuit 35, driver 311 will be driven via terminal T5
Signal (DRV) issues the gate terminal G of IGBT 22.Abnormal current signal (ABN) is sent to control circuit via terminal T6
40.
Fig. 6 be for the circuit diagram of the current mirroring circuit in Fig. 5 is described.Current mirroring circuit 321 includes operational amplifier
324, filter capacitor 325, transistor Q1, Q2 and Q3, and resistor 322,323,326,327,328,329 and 32A.When passing through
When the input operational amplifier 324 that the mirror currents (I γ) of transistor Q1 and IGBT22 are flowed to is to configure reception buffer circuit,
By the reference voltage identical control source with transistor Q1 to other transistor Q2 and Q3, also, separately design transistor
Current amplifier in Q2 and Q3 is obtaining desired value, for example, it is possible to the electric current of transistor Q2 is set to I γ x 1 and by crystal
The electric current of pipe Q3 is set to I γ x 10.
Fig. 7 be for the block diagram of the configuration of the driving force control circuit in Fig. 5 is described.Driving force control circuit 35 is wrapped
Include amplifying circuit 351, generating circuit from reference voltage 355, switching circuit 356 and voltage or current control circuit (V/I controller)
357.Amplifying circuit 351 is the anti-phase differential amplifier circuit formed by operational amplifier 352 and resistor 353 and 354, and right
Voltage (V3) is amplified, and voltage (V3) passes through the reference voltage (VREF2) of generating circuit from reference voltage 355 and normal current
The difference of detection voltage (V2) is multiplied by the resistance value (R2) of resistor 352 and the ratio of the resistance value (R1) of resistor 351 comes
Arrive.
V3=(VREF2-V2) x R2/R1
When V2 hour, V3 is just big.When V2 is big, V3 is just little.
Based on the driving force control signal (DRBC) being input into via terminal T7 from control circuit 40, switching circuit 356 exists
Switch between basic setup voltage (VB) and voltage (V3) to provide voltage to voltage or current control circuit 357.
Voltage or current control circuit 357 control the voltage of driver 311 or electric current to control the output electricity of driver 311
Pressure or output current.Voltage (V3) is higher than basic setup voltage (VB), and when basic setup voltage (VB) is switched to voltage
(V3), when, the output voltage of driver 311 or output current increase.
Fig. 8 be for the sequential chart of the control of the control driving force control circuit in Fig. 5 is described.Low speed in motor
In the range of (high torque), a power cycle is arranged to longer and pwm signal duty (duty) and is arranged to than medium/high
Bigger in fast scope.Also, in low-speed range, cause to voltage from the driving force control signal (DRBC) of terminal T7 input
(V3) switching, to arrange get Geng Gao by the driving force of driver 311.In medium/high speed scope, driving force control letter
Number (DRBC) causes the switching to basic setup voltage (VB).
According to the example, in order to improve driving force, when revolution starts or, during slowly running, to serve not only as
The pwm signal of drive signal can be increased, and the electric current of drive signal can also be increased.Additionally, being carried out with sensing electric current
Current detecting, and do not adopt transformer.Therefore, there is no need to circulation time, within the circulation time, by experience control circuit 40
A/D conversion transformer output voltage and drive control is adjusted based on A/D transformation result.So, easily realize at a high speed
Reason.Additionally, while employing the winding for being suitable to abnormal current detection and the winding for being suitable to normal current detection.Thus it is possible to obtain
Enough to gain.
Second example
Fig. 9 is the block diagram for explanation according to the electronic device of the second example.According to the electronic device of the second example one
Individual IGBT includes two current mirrors, but eliminates the current mirroring circuit in driver IC according to the first example.Other configurations
With identical in the first example.
IGBT 22 in first example is formed with the unit (cell) for similarly configuring to tens thousand of by thousands of.These lists
A part for unit is used as the unit for detecting sensing electric current (abnormal current), and the unit for being sensed by sensing electric current is formed
Region be referred to as " abnormal current detection zone ", and the region formed by other units be referred to as " main region ".Will be in main region
Interior number of unit (Nm：Integer) with the number of unit (Ns in the abnormal current detection zone：Integer) ratio (Nm/Ns) set
It is set to thousands of.IGBT 22A in second example further includes the unit for detecting sensing electric current (normal current), and
The region formed by those units is referred to as normal current detection zone.Assume that the number of unit in the normal current detection zone is
Nns (integer), for example, can be set to 10 by Nns/Ns.
As shown in Figure 10, the collector terminal of IGBT 22A is to main region, abnormal current detection zone and and normal current
Detection zone be public, but emitter terminal be divided into majority emitter terminal E (hereinafter referred to as main terminal), for normal current detect
Emitter terminal SE (hereinafter referred to as sensing terminals) and (hereinafter referred to as normal feel for the emitter terminal NSE of normal current detection
Survey terminal).Gate terminal G for driving each region is public.
From sensing terminals SE mirror currents (I γ 1) by resistance 322 produce abnormal current detection voltage (V1) with
The abnormal current of T1 terminal is coupled in detection.The current mirroring circuit of IGBT 22A and 322 shape of resistance for detecting abnormal current
Abnormal current detection circuit is become.Mirror currents (I γ 2) from normal sensing terminals NSE are produced normally by resistance 323
Current detection voltage (V2) is coupled to the normal current of T2 terminal to detect.The current mirroring circuit of IGBT 22A and for detection just
Often the resistance 323 of electric current defines normal current detection circuit.
According to this example, as without the need for current mirroring circuit in driver IC, driver IC can have with respect to first
The simpler configuration of example, so as to reduce chip area.
3rd example
Figure 11 is the block diagram for explanation according to the electronic device of the 3rd example.Electronic device according to the 3rd example is also wrapped
Include the A/D converter in the driver IC of the first example and the feedback of driving force control circuit can be gone to.Other are joined
Put identical with the first example.
Driver IC 30B includes A/C converter (ADC) 36, and the converter will (electric current be put used as current detection circuit 32
Big circuit 32-1 and 32-2) the normal current detection voltage (Vn) of output and abnormal current detection voltage (Va) inform that control is electric
Road 40B.The output of A/D converter 36 is sent to control circuit 40B via isolator 34B and terminal T9.
Figure 12 be for the block diagram of the driving force control circuit in Figure 11 is described.Driving force control in 3rd example
The controlled function of resistance value of the circuit with the loop resitance device made in amplifying circuit, also, other configurations and the first example
In identical.Control circuit 40B produces control signal (AGC) based on the voltage (Vn) obtained by A/D converter 36.Driving energy
The resistor 354B of the amplifying circuit 351B of power control circuit 35B is variable resistance, and the resistance value of the variable resistance is permissible
Can adjust based on the control signal (AGC) being input into from terminal T8.The anti-of normal current detection voltage (Vn) is made due to providing
The adjustable function of feedforward gain (makes the adjustable function of loop resitance 354B device of amplifying circuit 351B), by according to for detection just
Adjusting the gain, being become with high accuracy control driving force can for the often change of the resistance value (RS2) of 323 device of resistance of electric current
Energy.
<The example of modification>
Figure 13 be for the block diagram of the driving force control circuit in Figure 11 is described.Driving force control electricity in this example
Road has a controlled function of reference voltage (VREF2) of allowing in the first example, and in other configurations and the first example
Identical.Control circuit 40B produces control signal (RVC) based on the voltage (Vn) obtained by A/D converter 36.Driving energy
The reference voltage (VREF2) of the generating circuit from reference voltage 355C of power control circuit 35C be variable, and can be based on from end
The control signal (RVC) of sub- T8 input and be adjusted.Make the feedback oscillator of normal current detection voltage (Vn) can due to providing
The function (making the adjustable function of reference voltage (VREF2) of generating circuit from reference voltage 335C) of tune, by according to for detecting
Adjusting the gain, being become with high accuracy control driving force can for the change of the resistance value (RS2) of the resistance 323 of normal current
Energy.
Based on the example of embodiment, example and modification, the present invention made by inventor has been specifically described above.
It is noted, however, that the invention is not restricted to this, but can be changed in every way.
Claims (18)
1. a kind of semiconductor device, including：
Drive circuit, its driving power semiconductor devices；And
Driving force control circuit, the driving force of its control drive circuit,
Wherein described drive circuit is stopped based on the abnormal current detected from the sensing electric current of the power semiconductor
The power semiconductor is only driven, and
Wherein described driving force control circuit is based on detecting from the sensing electric current of the power semiconductor
Normal current is controlling the driving force of the drive circuit.
2. semiconductor device according to claim 1, also includes：
First current detection circuit, its described sensing electric current based on the power semiconductor is come output abnormality current detecting
Voltage, and
Second current detection circuit, its based on the power semiconductor the sensing electric current come export normal current detection
Voltage.
3. semiconductor device according to claim 2,
Wherein described first current detection circuit and second current detection circuit are formed by current mirroring circuit respectively, and
The first terminal and Second terminal is provided with, the first terminal will be used for detecting the institute of the power semiconductor
The resistor for stating abnormal current is coupled to outside, the Second terminal by for detect the power semiconductor described just
Often the resistor of electric current is coupled to the outside.
4. semiconductor device according to claim 2,
Wherein described driving force control circuit includes：
The circuit of voltage is produced based on the normal current detection voltage, and
Control circuit, its control the voltage of the drive circuit or electric current based on produced voltage.
5. semiconductor device according to claim 4,
Wherein described circuit includes amplifying circuit, and the amplifying circuit has operational amplifier and loop resitance device, and produces
The circuit of reference voltage, and
The resistance value of wherein described loop resitance device or the reference voltage can be changed based on control signal.
6. semiconductor device according to claim 5, also includes：
Change the A/D change-over circuit of the normal current detection voltage；
Export the terminal of the output of the A/D change-over circuit；And
The terminal of the control signal that input has the output based on the A/D change-over circuit and produces.
7. semiconductor device according to claim 1, also includes：
The first terminal, its will be coupled to the terminal of the output sensing electric current, the exception of the power semiconductor
Electric current is detected from the sensing electric current, and
Second terminal, its will be coupled to the terminal of the output sensing electric current, and the normal current is from the sensing electric current
It is detected.
8. semiconductor device according to claim 7,
Resistor wherein for detecting the abnormal current of the power semiconductor is coupled to outside, so that institute
State the first terminal to be configured to receive abnormal current detection voltage, and
Resistor wherein for detecting the normal current of the power semiconductor is coupled to the outside, so that
Obtain the Second terminal to be configured to receive normal current detection voltage.
9. semiconductor device according to claim 8,
Wherein described driving force control circuit includes：
The circuit of voltage is produced based on the normal current detection voltage；And
Control circuit, its control the voltage of the drive circuit or electric current based on produced voltage.
10. a kind of electronic device, including：
Power semiconductor；
First semiconductor device；And
Second semiconductor device,
Wherein described first semiconductor device includes：
Drive circuit, its drive the power semiconductor；
Driving force control circuit, the driving force of its control drive circuit；
Wherein described drive circuit is stopped based on the abnormal current detected from the sensing electric current of the power semiconductor
The power semiconductor is only driven, and
Wherein described driving force control circuit is based on detecting from the sensing electric current of the power semiconductor
Normal current is controlling the driving force of the drive circuit.
11. electronic devices according to claim 10,
Wherein described power semiconductor includes：
The first terminal, its provide electric current for driving load, and
Second terminal, its provide electric current for monitoring driving electric current；And
Wherein described first semiconductor integrated circuit includes：
First current detection circuit, its based on the electric current from the Second terminal come output abnormality current detection voltage,
And
Second current detection circuit, its export normal current detection voltage based on the electric current from the Second terminal.
12. electronic devices according to claim 11,
Wherein described first semiconductor device includes：
Forth terminal, its will be coupled to outside for the resistor for detecting the abnormal current of the power semiconductor,
And
5th terminal, its will be coupled to described outer for the resistor for detecting the normal current of the power semiconductor
Portion；
Wherein described first current detection circuit and second current detection circuit are formed by current mirroring circuit respectively, and
Wherein described current mirroring circuit is respectively coupled to the forth terminal and the 5th terminal.
13. electronic devices according to claim 11,
The driving force control circuit of wherein described first semiconductor device includes：
The circuit of voltage is produced based on the normal current detection voltage；And
Control circuit, its control the voltage of the drive circuit or electric current based on produced voltage.
14. electronic devices according to claim 13,
Wherein described circuit includes amplifying circuit, and the amplifying circuit has operational amplifier and loop resitance device, and produces
The circuit of reference voltage, and
The resistance value of wherein described loop resitance device or the reference voltage can be changed based on control signal.
15. electronic devices according to claim 14,
Wherein described first semiconductor integrated circuit also includes the A/D change-over circuit for changing the normal current detection voltage, and
And
Wherein described second semiconductor device includes output based on the A/D change-over circuit to produce the control
The CPU of signal.
16. electronic devices according to claim 10,
Wherein described power semiconductor includes：
The first terminal, provides electric current for driving load, and
Second terminal, provides electric current for monitoring driving electric current, and
Third terminal, provides electric current for the monitoring driving current, and
Wherein described first semiconductor device includes：
Forth terminal, will be coupled to the Second terminal, and
5th terminal, will be coupled to the third terminal.
17. electronic devices according to claim 16, also include：
Be coupled to the third terminal, for detecting the resistor of the abnormal current of the power semiconductor；And
Be coupled to the forth terminal, for detecting the resistor of the normal current of the power semiconductor；
Wherein described third terminal is configured to receive the abnormal current detection voltage, and
Wherein described forth terminal is configured to receive the normal current detection voltage.
18. electronic devices according to claim 17,
Wherein described driving force control circuit includes：
The circuit of voltage is produced based on the normal current detection voltage, and
Control circuit, its control the voltage of the drive circuit or electric current based on produced voltage.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-172625 | 2015-09-02 | ||
| JP2015172625A JP6549451B2 (en) | 2015-09-02 | 2015-09-02 | Semiconductor integrated circuit device and electronic device |
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| CN106487264B CN106487264B (en) | 2020-08-28 |
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| US (2) | US9835658B2 (en) |
| JP (1) | JP6549451B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111653852A (en) * | 2020-05-19 | 2020-09-11 | 南京理工大学 | On-chip transformer-based transmission zero-point adjustable filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2018093684A (en) * | 2016-12-07 | 2018-06-14 | ルネサスエレクトロニクス株式会社 | Semiconductor device and power conversion device |
| WO2019049698A1 (en) * | 2017-09-08 | 2019-03-14 | パナソニックＩｐマネジメント株式会社 | Power conversion circuit and power conversion device |
| DE102019119973B3 (en) * | 2019-07-24 | 2021-01-21 | Infineon Technologies Ag | INTELLIGENT ELECTRONIC SWITCH |
| KR20210015261A (en) * | 2019-08-01 | 2021-02-10 | 현대자동차주식회사 | Overcurrent detection reference compensation system of switching element for inverter and overcurrent detection system using the same |
| DE102020123149A1 (en) | 2020-09-04 | 2022-03-10 | Infineon Technologies Ag | CONTROL CIRCUIT FOR ELECTRONIC SWITCH |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6395728A (en) * | 1986-10-13 | 1988-04-26 | Fuji Electric Co Ltd | Overcurrent protection circuit for igbt |
| US5710508A (en) * | 1995-05-16 | 1998-01-20 | Fuji Electric Co., Ltd. | Semiconductor apparatus |
| US20010026429A1 (en) * | 2000-03-31 | 2001-10-04 | Yutaka Fukuda | Semiconductor switching element driving circuit |
| CN104852714A (en) * | 2014-02-19 | 2015-08-19 | 株式会社电装 | Gate driver |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5061863A (en) * | 1989-05-16 | 1991-10-29 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Transistor provided with a current detecting function |
| JP2800277B2 (en) * | 1989-06-26 | 1998-09-21 | 株式会社豊田自動織機製作所 | Semiconductor element drive circuit |
| JP2000323974A (en) * | 1999-05-12 | 2000-11-24 | Fuji Electric Co Ltd | Short-circuit protecting circuit for semiconductor element |
| JP2006187101A (en) * | 2004-12-27 | 2006-07-13 | Nissan Motor Co Ltd | Method of driving voltage driver element |
| JP4619812B2 (en) * | 2005-02-16 | 2011-01-26 | 株式会社東芝 | Gate drive circuit |
| EP1755221B1 (en) * | 2005-08-17 | 2009-12-09 | Infineon Technologies AG | Method and driver circuit for controlling a power MOS transistor |
| JP2007228447A (en) * | 2006-02-27 | 2007-09-06 | Hitachi Ltd | Gate drive circuit for switching element |
| JP5443946B2 (en) | 2009-11-02 | 2014-03-19 | 株式会社東芝 | Inverter device |
| JP5678498B2 (en) * | 2010-07-15 | 2015-03-04 | 富士電機株式会社 | Gate drive circuit for power semiconductor device |
| US8633755B2 (en) * | 2010-11-22 | 2014-01-21 | Denso Corporation | Load driver with constant current variable structure |
| JP5783121B2 (en) * | 2012-04-09 | 2015-09-24 | 株式会社デンソー | Driving device for driven switching element |
| CN104170255B (en) * | 2012-06-22 | 2017-09-19 | 富士电机株式会社 | Overcurrent detecting device and use its SPM |
| US8703091B2 (en) * | 2012-07-31 | 2014-04-22 | Uht Unitech Co., Ltd. | High modulus graphite fiber and manufacturing method thereof |
| KR101723358B1 (en) * | 2012-12-21 | 2017-04-05 | 미쓰비시덴키 가부시키가이샤 | Switching element drive circuit, power module, and automobile |
| JP6065597B2 (en) * | 2013-01-16 | 2017-01-25 | 富士電機株式会社 | Power converter |
-
2015
- 2015-09-02 JP JP2015172625A patent/JP6549451B2/en active Active
-
2016
- 2016-07-22 US US15/216,859 patent/US9835658B2/en active Active
- 2016-08-15 CN CN201610670696.8A patent/CN106487264B/en active Active
-
2017
- 2017-10-30 US US15/797,757 patent/US10324114B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6395728A (en) * | 1986-10-13 | 1988-04-26 | Fuji Electric Co Ltd | Overcurrent protection circuit for igbt |
| US5710508A (en) * | 1995-05-16 | 1998-01-20 | Fuji Electric Co., Ltd. | Semiconductor apparatus |
| US20010026429A1 (en) * | 2000-03-31 | 2001-10-04 | Yutaka Fukuda | Semiconductor switching element driving circuit |
| CN104852714A (en) * | 2014-02-19 | 2015-08-19 | 株式会社电装 | Gate driver |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111653852A (en) * | 2020-05-19 | 2020-09-11 | 南京理工大学 | On-chip transformer-based transmission zero-point adjustable filter |
Also Published As
| Publication number | Publication date |
|---|---|
| US9835658B2 (en) | 2017-12-05 |
| JP2017050984A (en) | 2017-03-09 |
| JP6549451B2 (en) | 2019-07-24 |
| CN106487264B (en) | 2020-08-28 |
| US20170063367A1 (en) | 2017-03-02 |
| US10324114B2 (en) | 2019-06-18 |
| US20180067150A1 (en) | 2018-03-08 |
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