CN106487209A - A kind of method that multi-power domain is selected in Power Management Design - Google Patents
A kind of method that multi-power domain is selected in Power Management Design Download PDFInfo
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- CN106487209A CN106487209A CN201510534324.8A CN201510534324A CN106487209A CN 106487209 A CN106487209 A CN 106487209A CN 201510534324 A CN201510534324 A CN 201510534324A CN 106487209 A CN106487209 A CN 106487209A
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- power
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- power domain
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- management design
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Abstract
The present invention is the method selected with regard to multi-power domain in a kind of Power Management Design, and methods described is mainly included the following steps that：According to power supply selecting module, the high voltage in VDD_1 and VDD_2 is automatically selected.It is connected on the substrate (Bulk) of power domain _ 2.Ensure that parasitism Diode is in reverse blocking state forever.The present invention can effectively avoid multiple power supplys from not working good on startup, then the possibility that can there is short circuit electric leakage, so as to ensure that using safely for electrical equipment.
Description
Technical field
The present invention relates to a kind of power domain selects field, the method that multi-power domain is selected in more particularly to a kind of Power Management Design.
Background technology
In power supply chip design, often there are multiple power domain.In having the power supply chip of multi-power domain, there is signal between different electrical power domain and connect (as Fig. 1), the in figure, it is signally attached to the Source end of the PMOS of power domain -2.The setup time of VDD_1 and VDD_2 is variant, if VDD_2 set up later, it is likely that signal S1 voltage be higher than VDD_2, then power domain _ 2 parasitic diode (Diode) conducting so that between Source and Bulk exist electric leakage may.If multiple power supplys are not worked good on startup, can there is the possibility of short circuit.This patent is provided with a kind of method to avoid the possibility of short circuit electric leakage.
Content of the invention
The invention provides a kind of method that multi-power domain is selected in Power Management Design, is avoided that multiple power supplys are not worked good on startup, then the possibility that can there is short circuit electric leakage.Described below：
A kind of method that multi-power domain is selected in Power Management Design, the method comprising the steps of：
1) according to power supply selecting module, the high voltage in VDD_1 and VDD_2 is automatically selected.
2) it is connected on the substrate (Bulk) of power domain _ 2.
3) ensure that parasitism Diode is in reverse blocking state forever.
The beneficial effect of technical scheme that the present invention is provided is：The present invention can be prevented effectively from the danger that multiple power supplys are not worked good on startup and produce short circuit electric leakage, it is ensured that the safe handling of electrical equipment.
By being incorporated in the present specification and becoming part thereof of accompanying drawing and detailed description below, the above-mentioned characteristic of the present invention and advantage will be able to more detailed description, and the drawings and specific embodiments are used for being illustrated by way of example the principle of the present invention together.
Description of the drawings
Fig. 1 is the signal connection between different electrical power domain；
Fig. 2 is for automatically selecting high potential；
Fig. 3 is power supply selecting module.
Specific embodiment
For making the object, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described in further detail below in conjunction with accompanying drawing.
Referring to Fig. 1：In having the power supply chip of multi-power domain, there is signal between different electrical power domain and connect, the in figure, it is signally attached to the Source end of the PMOS of power domain -2.The setup time of VDD_1 and VDD_2 is variant, if VDD_2 set up later, it is likely that signal S1 voltage be higher than VDD_2, then power domain _ 2 parasitic diode (Diode) conducting so that between Source and Bulk exist electric leakage may.
Referring to Fig. 2：By a power supply selecting module, the high potential in VDD_1 and VDD_2 is elected automatically, and be connected on the substrate (Bulk) of power domain _ 2.So as to ensure parasitic Diode forever in reverse blocking state.
Referring to Fig. 3：VDD_1 and VDD_2 are two different electrical power, if VDD_2 is opened higher than VDD_1, M2 pipe, this VDD_2 is connected on the substrate (Bulk) of power domain _ 2 automatically.If same VDD_1 is opened higher than VDD_2, M1 pipe, this VDD_1 is connected on the substrate (Bulk) of power domain _ 2 automatically.
Claims (3)
1. a kind of method that multi-power domain is selected in Power Management Design, it is characterised in that methods described includes the following steps：
1) according to power supply selecting module, the high voltage in VDD_1 and VDD_2 is automatically selected.
2) it is connected on the substrate (Bulk) of power domain _ 2.
3) ensure that parasitism Diode is in reverse blocking state forever.
2. the method that multi-power domain is selected in a kind of Power Management Design according to claim 1, it is characterised in that：In many power supplys
In the PowerIC of domain work, automatically select maximum potential and be connected in the substrate residing for PMOS (Bulk) so that be parasitic
Diode is in by state, it is to avoid electric leakage.
3. the method that multi-power domain is selected in a kind of Power Management Design according to claim 1, it is characterised in that：This circuit nothing
Palpus control signal, automatically selects high power domain voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510534324.8A CN106487209A (en) | 2015-08-27 | 2015-08-27 | A kind of method that multi-power domain is selected in Power Management Design |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510534324.8A CN106487209A (en) | 2015-08-27 | 2015-08-27 | A kind of method that multi-power domain is selected in Power Management Design |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106487209A true CN106487209A (en) | 2017-03-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510534324.8A Pending CN106487209A (en) | 2015-08-27 | 2015-08-27 | A kind of method that multi-power domain is selected in Power Management Design |
Country Status (1)
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| CN (1) | CN106487209A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117240277A (en) * | 2023-11-15 | 2023-12-15 | 浙江地芯引力科技有限公司 | Substrate selection circuit and electronic equipment |
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| CN1842957A (en) * | 2004-07-20 | 2006-10-04 | 株式会社理光 | Switching regulator, power supply circuit and secondary cell charging circuit including the same |
| CN101340084A (en) * | 2008-08-12 | 2009-01-07 | 北京中星微电子有限公司 | Driving circuit for discharge over-current protection and recovery, battery protection circuit and system |
| CN101840908A (en) * | 2010-02-09 | 2010-09-22 | 上海山景集成电路技术有限公司 | Wide-input voltage range zero-leakage current input pull-up circuit |
| CN203086436U (en) * | 2012-12-05 | 2013-07-24 | 艾尔瓦特集成电路科技（天津）有限公司 | Integrated circuit |
| CN103856204A (en) * | 2012-12-05 | 2014-06-11 | 艾尔瓦特集成电路科技（天津）有限公司 | Integrated circuit, integrated circuit starting method and voltage selection circuit |
-
2015
- 2015-08-27 CN CN201510534324.8A patent/CN106487209A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1842957A (en) * | 2004-07-20 | 2006-10-04 | 株式会社理光 | Switching regulator, power supply circuit and secondary cell charging circuit including the same |
| CN101340084A (en) * | 2008-08-12 | 2009-01-07 | 北京中星微电子有限公司 | Driving circuit for discharge over-current protection and recovery, battery protection circuit and system |
| CN101840908A (en) * | 2010-02-09 | 2010-09-22 | 上海山景集成电路技术有限公司 | Wide-input voltage range zero-leakage current input pull-up circuit |
| CN203086436U (en) * | 2012-12-05 | 2013-07-24 | 艾尔瓦特集成电路科技（天津）有限公司 | Integrated circuit |
| CN103856204A (en) * | 2012-12-05 | 2014-06-11 | 艾尔瓦特集成电路科技（天津）有限公司 | Integrated circuit, integrated circuit starting method and voltage selection circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117240277A (en) * | 2023-11-15 | 2023-12-15 | 浙江地芯引力科技有限公司 | Substrate selection circuit and electronic equipment |
| CN117240277B (en) * | 2023-11-15 | 2024-02-09 | 浙江地芯引力科技有限公司 | Substrate selection circuit and electronic equipment |
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| PB01 | Publication | ||
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Application publication date: 20170308 |