CN106486449B - Ball bonding gold dispersion copper wire - Google Patents
Ball bonding gold dispersion copper wire Download PDFInfo
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- CN106486449B CN106486449B CN201610550457.9A CN201610550457A CN106486449B CN 106486449 B CN106486449 B CN 106486449B CN 201610550457 A CN201610550457 A CN 201610550457A CN 106486449 B CN106486449 B CN 106486449B
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C9/00—Alloys based on copper
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Abstract
The present invention provides a kind of ball bonding golden (Au) dispersion copper wire, can form stable melting soldered ball, to solve the problems, such as that the FAB of volume production closing line causes the formation of melting soldered ball unstable.The ball bonding of the present invention disperses copper wire with golden (Au), it is characterized in that：It is palladium (Pd) coating and gold (Au) epidermis are formed on the core material that is made of the copper alloy of 99.9 mass % or more of purity of copper (Cu), ball bonding palladium (Pd) coating copper wire that line footpath is 10 25 μm, the theoretical film thickness obtained with the chemical analysis of the gold (Au) is 0.1 nanometer (nm) or more 10 nanometers (nm) hereinafter, the distribution with the micro- surface analysis for visiting instrument (EPMA) of electronics obtained golden (Au) is：Gold (Au) particulate dotted is distributed on palladium (Pd) coating with countless.
Description
Technical field
The present invention is to be related to a kind of ball bonding golden (Au) dispersion copper wire, and it is suitable for the IC cores used in semiconductor device
The connection of the substrates such as plate electrode and outside lead；Even more particularly to 15 μm of superfine wires below of one kind, also can be obtained steady
Surely the coating copper wire of soldered ball is melted.
Background technology
In general, engaged with the first of electrode for coating copper closing line, the mode engaged using referred to as soldered ball, and needle
Coating copper closing line is engaged with second of the wiring on semiconductor circuit wiring substrate, the side engaged using referred to as wedge type
Formula.In first engagement, by the mode for the balling (electronic frame off, EFO) that discharges, to coating copper closing line
Front end bestow electric arc heated, after so that the front end is melted, so that fusant is solidified using surface tension, and before closing line
End, which is formed, is known as soldered ball (FAB；Free air ball) positive sphere.Then, on one side that this is first in the range of 150-300 DEG C
Phase soldered ball and the heated by electrodes, apply ultrasonic on one side, to be crimped, the aluminium pad (referring to Fig.1) that is engaged on chip.
Herein, it is formed in the first engagement of melting soldered ball, in order to inhibit the oxidation of copper, usually uses following soldered ball sides
Formula：The gas based on nitrogen or the nitrogen containing 5% hydrogen are blown for closing line on one side, the front end of closing line is made to carry out fire on one side
Flower electric discharge forms melting soldered ball.Which or be formed by this way melting soldered ball be known as FAB.
Palladium (Pd) coating copper wire that the IC chip electrode of semiconductor device was connect with outside lead in the past is opened in fact Japanese
In clear 60-160554 bulletins (aftermentioned patent document 1), i.e., it has been proposed that a kind of semiconductor, which is used, engages filament, it is characterized in that "
The coating of Pd or Pd alloys is directly arranged in the core wire periphery of Cu Cu alloys across middle layer ".Later, practical
Palladium (Pd) coating copper wire, in Japanese Unexamined Patent Publication 2004-014884 bulletins (aftermentioned patent document 2), it is thus proposed that a kind of engagement
Line is the closing line for the coating for having core material and being formed on core material, it is characterized in that " core material is hard with dimensional microstructure formula
The material spent other than 80Hv gold below is constituted, and the coating be by fusing point be higher than core material 300 DEG C of fusing point or more and
Inoxidizability is constituted better than the metal of copper ", in addition, the SEI Technical Review magazines the 160th of in March, 2002 distribution
In number, introduce " exploitation of closing line ".Also there is the patent application case (Japanese Unexamined Patent Publication at the interface for parsing the core material and coating
2010-272884 bulletins etc.).
However, palladium (Pd) coating copper wire of the exposed this free from admixture of palladium (Pd), because of bracing wire mold (wire drawing
Dies abrasion) are serious, and the unwinding of wire rod is also bad, therefore are not the materials for being suitble to mass production.In addition, even if volume production
Palladium (Pd) coating copper wire of free from admixture has the shortcomings that melting soldered ball is unstable if being formed continuously FAB.That is, the palladium of free from admixture
(Pd) coating copper wire has the shortcomings that being easy to happen soldered ball easily becomes long spear problem when forming melting soldered ball.
Therefore, a kind of invention of closing line is proposed in Japanese Unexamined Patent Publication 2005-167020 bulletins (aftermentioned patent document 3),
It is characterized in that：So that the fusing point of golden (Au) most surface is less than palladium (Pd) coating, and makes the thickness of golden (Au) coating than palladium (Pd)
Coating is thin, and is 0.002 times or less (with the claim 8 of bulletin) of line footpath.Then, general FAB is to use following sides
Formula：Engagement line front end and the front end arc torch (arc torch) are formed by angle, be within 60 degree of wire rod long side direction,
And arc discharge is formed between the arc torch and wire rod front end, to form soldered ball portion, then the soldered ball portion is connected on electrode.
If using the above-mentioned coating wire rod of gold (Au) most surface, golden (Au) is reached with the shortest distance by the tip of arc discharge, is protected
Demonstrate,prove the dimensionally stable of FAB (with reference to Japanese Unexamined Patent Publication 2011-146754 bulletins).
In this way, being coated with palladium (Pd) the coating copper wire of golden (Au), have " with the wetability of FAB is good, melting soldered ball is easy
Attach to the wire rod that root does not melt " tendency.Therefore, develop thereafter " continuous bracing wire to final film thickness reach 1-9nm be
Gold (Au) coating wire rod (Japanese Unexamined Patent Publication 2012-036490 bulletins (aftermentioned patent document 4)) only ".If however, being drawn with diamond
Line mould carries out continuous bracing wire to closing line, then because the abrasion of mold cause line footpath to increase so that gold (Au) quilt of nano-scale
Coating becomes uneven.Therefore, if being intended to the film thickness monitoring by gold (Au) coating of most surface in several nanometers of (nm) units, most
It is difficult to maintain and manage mold eventually, and the formality of more mold exchange etc. is complicated.
On the other hand, someone develops a kind of technology of the gold of most surface (Au) film, and utilization " makes the palladium of middle layer invade
Enter golden thin layer, and so that fine metallographic and palladium phase 3 is tieed up and grow up " Stranski-Krastanov growth (Japanese Unexamined Patent Publication 2013-
No. 131654 bulletins (aftermentioned patent document 5)).It is close using the atomic radius of Au and the atomic radius of Pd, and make palladium (Pd) film
Grown up with chevron from golden (Au) film.In the technology, golden (Au) film and the thickness relationship of palladium (Pd) layer are particularly important.
If however, because mold abrasion cause golden (Au) film uneven, which can not be according to thickness
Relationship causes palladium (Pd) film not grown up, or golden (Au) film can diffuse in palladium (Pd) layer.In addition, finally with diamond
In the case of bracing wire mould is handled, the trace of the mold is transferred to wire rod, and remains striated groove, so at this there are
Thicker gold (Au) coating.Therefore, if still there are melting soldered ball is formed with FAB, soldered ball is melted along striated groove
Gold (Au) coating not melted climb, and then attach to wire rod, cause to melt the unstable problem of soldered ball.
Existing technical literature：
1 Japanese Unexamined Patent Publication 60-160554 bulletins of patent document；
2 Japanese Unexamined Patent Publication 2004-014884 bulletins of patent document；
3 Japanese Unexamined Patent Publication 2005-167020 bulletins of patent document；
4 Japanese Unexamined Patent Publication 2012-036490 bulletins of patent document；
5 Japanese Unexamined Patent Publication 2013-131654 bulletins of patent document.
Invention content
The purpose of the present invention is to solve the EFO of the closing line of volume production, to cause melting soldered ball to climb along wire rod above-mentioned
Problem, and a kind of ball bonding golden (Au) dispersion copper wire is provided, no matter it is that completely new diamond bracing wire mould institute is used after volume production starts
Wire rod manufactured by mold after more than 10 myriadmeter of wire rod or bracing wire of manufacture, before replacement, can all be put by identical
Electric condition, which is formed, stablizes melting soldered ball.
If it was found by the inventors of the present invention that the film thickness of gold (Au) epidermis of most surface is made to be as thin as some degree, then passing through
Final Tempering and Quenching appropriate, then can have " makes the gold (Au) of most surface with particle shape dispersion, is arranged in palladium (Pd) coating
It is upper and with countless dotted presence " metastable range.The metastable range can be considered as and " be drawn in the epidermis of very thin gold (Au)
The mutual machinery bond of gold (Au) atom for stretching is mitigated because of heat " bond of the gold (Au) between metal.In addition, Jie is steady
Region is mainly determined by the surface texture of the line footpath of wire rod and coating palladium (Pd).It is suitble to the metastable range
The amplitude of temperature range is smaller.For example, only rising+50 DEG C from the start temperature of metastable range, then the metastable range disappears, and most
The gold (Au) on surface is then embedded in palladium (Pd) coating.In addition, being suitble to the temperature range of metastable range, according to palladium (Pd) coating
Be with " dry type plating is formed " or " being formed by the wet type plating of cyaniding bath or non-cyaniding bath ", and it is different.This hair
Bright inventor completes the present invention according to such discovery.
To solve the problems, such as that the ball bonding of the present invention disperses copper wire with golden (Au), it is characterized in that：It is in copper (Cu) purity
The coating of palladium (Pd) and the epidermis and line of gold (Au) are formed on the core material being made of the copper alloy of 99.9 mass % or more
The ball bonding of 10-25 μm of diameter palladium (Pd) coating copper wire carries out chemical analysis institute for the gold (Au) in the epidermis of the gold (Au)
Obtained theoretical film thickness more than 0.1 nanometer (nm) 10 nanometers (nm) hereinafter, and carrying out surface point with the micro- spy instrument (EPMA) of electronics
Analysing the distribution of obtained golden (Au) is：Gold (Au) particulate is with countless spot distributions on palladium (Pd) coating.
The better embodiment of the present invention is as described below.
The copper alloy preferably contains 3 mass ppm or more, 500 mass ppm phosphorus below (P).Preferably, the copper alloy,
Preferably contain 50 mass ppm or more, 500 mass ppm golden (Au) below.Preferably, the copper alloy preferably contains 0.2 matter
Measure the metallic element other than 100 mass ppm phosphorus below (P) of ppm or more and golden (Au).Preferably, the copper alloy, preferably contains
There are 3 mass ppm or more, 500 mass ppm phosphorus below (P), 50 mass ppm or more, 500 mass ppm golden (Au) below, 0.2 matter
100 mass ppm of ppm or more other metallic elements below are measured, and the total amount of these elements is less than 1,000ppm.Preferably, should
Theoretical film thickness preferably 2 nanometers (nm) below.
In the present invention, foregoing " theoretical film thickness ", because the film thickness of gold (Au) epidermis of most surface can not be practical
It measures and the concept stretched of spreading out.That is, acquiring golden (Au) institute among closing line entirety by gravimetry and chemical analysis
The ratio accounted for.Then, the value acquired from this, it is assumed that the section of closing line is positive round, and assumes that the most surface of its line footpath is golden
(Au) uniformly coating, to calculate film thickness.It is concave-convex in having on the surface of actual closing line due to the grade of nano-scale, therefore
Atomic radius of the film thickness value of the theory likely to be less than golden (Au).
In addition, " chemical analysis " is following analysis methods：Dissolving golden (Au) dispersion copper wire is whole, then passes through high-frequency induction
The micro- spy instrument (EPMA) of coupled plasma (ICP) ICP Atomic Emission Spectrophotometer method-electronics acquires gold (Au) concentration in the solution.In addition, most
The gold (Au) " coating " on surface and the statement of " layer " in " epidermis " are convenient to indicate that golden (Au) particulate is deposited with " layer "
Range.
In addition, by micro- spy instrument (EPMA) surface analysis of electronics, the distribution by gold (Au) particulate is with countless dotted
Distribution is used as feature, be because gold (Au) particulate if greatly to some degree if can with visual confirmation, but also with too small and
Can not be with visual confirmation the case where.In addition it can be seen that, among micro- spy instrument (EPMA) surface analysis of electronics, size is greatly to some journey
Gold (Au) particulate of degree will not be examined in the distribution of the obtained Pd of same analysis in the position of gold (Au) particulate
Measure Pd (with reference to Fig. 2 and Fig. 3).
The ball bonding of the present invention is disperseed with golden (Au) in copper wire, is existed with the obtained theoretical film thickness of the chemical analysis of the gold (Au)
10 nanometers (nm) more than 0.1 nanometer (nm) below.Make the upper limit at 10 nanometers (nm) hereinafter, being because the gold (Au) of most surface is coating
The film thickness of layer not by so-called with " layer " of thickness in the form of exist, but with " gold (Au) particulate dotted is distributed in countless
On palladium (Pd) coating " it is used as constitutive requirements.Because the electric conductivity of golden (Au) is better than palladium (Pd), therefore spark discharge reaches the gold
(Au) particulate can make FAB stablize.In addition, be the state of golden (Au) particulate by the modification of gold (Au) layer that will be through extension,
The chemism of golden (Au) particulate can also stablized.
The film thickness of golden (Au) coating if more than 10 nanometers (nm), if because of film thickness inhomogeneities, lead to spark discharge
It is uneven to reach place, and then keeps FAB unstable.If carrying out the heat of palladium (Pd) film by being heat-treated with homogeneous etc. and growing up, as a result
Cause the film thickness of golden (Au) coating more uneven.Make lower limit more than 0.1 nanometer (nm), is to make golden (Au) particulate
It dotted is distributed on palladium (Pd) coating with countless.If being less than lower limit, golden (Au) particulate can not be with countless spot distributions.
If with golden (Au) particulate not with spot distribution in the region on palladium (Pd) coating, spark discharge reaches
Place is uneven, causes FAB unstable.Herein, golden (Au) particulate refers to even if as mold with " countless dotted presence "
On the striated groove of trace, it is also dispersed with the state of golden (Au) particulate.It is coating by the final heat treatment of proper temperature
In most surface the atomic plane gold (Au) formula assemble, and form particulate.If being higher than the proper temperature, golden (Au) atom point
It dissipates in palladium (Pd) coating, and generates so-called diffusion phenomena, golden (Au) particulate is caused to disappear.
Based on following reason, keep theoretical film thickness preferable below at 2 nanometers (nm).
In general, the film thickness of golden if (Au) is thickeied to hundreds of nanometers, and can be with Ou Jie spectroscopy apparatus in depth
The analysis in direction is surveyed, then so-called phenomenon of crawling can be observed, the phenomenon of crawling, and is that melting soldered ball infiltration is located at melting
Gold (Au) film of the wire surface of soldered ball root, and because of the surface tension of melting soldered ball, cause it in the wire rod table not melted
It climbs in face.On the other hand, if golden (Au) film thickness measured value at 50 nanometers (nm) hereinafter, if become the region of theoretical film thickness,
Without observing such phenomenon of crawling.
However, even if in 50 nanometers of (nm) ranges below, as long as the region that the theoretical film thickness of golden (Au) is thicker, gold
(Au) particulate can be disappeared with countless dotted existing phenomenons because of final Tempering and Quenching, and be difficult to control golden (Au)
Film thickness.Therefore, in order in the case where carrying out bracing wire for a long time with 1 final diamond bracing wire mould, also can steadily make golden (Au) micro-
Particle will get over Bao Yuehao with countless dotted presence, the film thickness of golden (Au).Therefore, theoretical film thickness 2 nanometers (nm) below.
In addition, the ball bonding of the present invention is disperseed with golden (Au) in copper wire, the noble metal that golden (Au) and palladium (Pd) are constituted is coating
Layer, it is however generally that at 1 micron (μm) hereinafter, its 10-25 μm of line footpath relative to closing line, the thickness that can almost ignore.
Therefore, it even if forming melting soldered ball by FAB, will not also be influenced by the film thickness of coating.However, because there are the antioxygens
Palladium (Pd) coating for the property changed, therefore the copper wire of core material will not be aoxidized because of the oxygen in air.Therefore, with existing copper (Cu)
The core material composition that is constituted of copper alloy of the purity more than 99.9 mass % it is identical, ball bonding of the invention disperses copper with golden (Au)
Line, melting soldered ball becomes positive spherical, and can be bonded to aluminium pad.
In addition, even if in bracing wire to final line footpath and then coating palladium (Pd) and the lining material of the noble metal of golden (Au),
Also it can not reach the purpose of the present invention.This is because final coating can not fill irregular lengthwise open groove, and can not
Form the epidermis of the gold (Au) of the theoretical film thickness of the present invention.The present invention very thin epidermis formation, though also with core material and by
The combination variety for covering material is related, but in general, the diameter of wire rod must 1/10 or more undergauge in bracing wire step.
In addition, because the epidermis for forming " gold (Au) particulate of the invention is with countless dotted existing aspects " is very thin,
Therefore epidermis once being formed, then epidermis will not be destroyed because of general pull wire speed and diameter reducing rate.Therefore, if appropriate adjust
The temperature and time of whole Tempering and Quenching can then be easily formed gold (Au) particulate of set theoretic throat with countless dotted presence
Aspect.
The copper alloy of core material, if including expected addition element, for the copper (Cu) of 99.9 mass % of general purity or more
The copper alloy constituted.In the case of the copper alloy that the copper (Cu) of 99.9 mass % of purity or more is constituted, phosphorus (P) or gold are selected
(Au) in the case of, the alloy of the prior art is can refer to, suitably determines other remaining metal components.Copper alloy base material it is pure
Degree, the copper alloy that preferably copper (Cu) of 99.99 mass % of purity or more is constituted, particularly good is 99.999 mass % of purity or more
The copper alloy that is constituted of copper (Cu).Then, also can be according to required semiconductor species and purposes, and determine to be properly added element
Type, also can be according to as thermal property, the engineering properties needed for closing line, the appropriate combination and addition for determining addition element
Amount.
If stable FAB can be formed there are phosphorus (P) in the copper (Cu) of core material, this known (Japanese Unexamined Patent Publication
2010-225722 bulletins and International Publication WO2011/129256 bulletins).Therefore, the case where which includes phosphorus (P)
In, preferably contain 3 mass ppm or more, 500 mass ppm or less.
If there is golden (Au) in the copper (Cu) of core material, with it is countless it is dotted there are the gold of most surface (Au) particulate be easy it is mixed
Enter to melt the inside of soldered ball, gold (Au) particulate of most surface is preferentially scattered in compared to being scattered in palladium (Pd) coating
In the copper (Cu) of core material.As a result, there is golden (Au) among the copper (Cu) of core material, compared to not existing, there is the gold for interfering AuCu
Compound is formed in the effect opposite in this way with the joint interface of aluminium pad between category.On the other hand, because golden (Au) is high-valency metal,
Therefore it can not largely add.Therefore, preferably include 50 mass ppm or more, 500 mass in the case which includes golden (Au)
Ppm or less.
The very thin superficial layer and coating of wire surface in the present invention all disappear in the FAB engagements of the first engagement, separately
Outside, it in the ultrasonic engagement of the second engagement, also disappears in joint.
Ball bonding according to the present invention disperses copper wire with golden (Au), because between arc torch and the front end of closing line, with nothing
Gold (Au) particulate of the dotted most surface for being present in closing line of number forms such as general arc discharge of lightning rod, therefore is connect first
Arc discharge when conjunction is stablized.In addition, since the most surface is very thin, therefore will not there is the melting soldered ball to be formed infiltration root not melt
The wire rod that melts and the problem of cause soldered ball to deviate.As a result, compared to current size, it can be by ball bonding golden (Au) dispersion copper wire more
Refinement macro.
In addition, the ball bonding of the present invention golden (Au) dispersion copper wire, which can reduce aluminium, pads area, and the smaller soldered ball of diameter can
Disperse copper wire to configure golden (Au) to high-density.In addition, gold (Au) according to the present invention disperses copper wire, palladium (Pd) coating and gold
(Au) epidermis can block the oxygen invaded from wire surface, therefore the effect that the copper alloy that core material can be obtained will not aoxidize.The present invention
Ball bonding disperse copper wire with golden (Au) because coating is very thin, therefore unrelated with the material of lining material, stable positive ball can be obtained
Shape soldered ball can also form circuit etc. well.
Further, ball bonding of the invention disperses copper wire with golden (Au), because golden (Au) particulate is with countless dotted presence
Wire rod most surface, therefore even if wire rod is multilaminate coiled each other, wire rod will not also stick each other.As a result, the unwinding of wire rod becomes
Well.As additional effect, wire surface improves relative to the flatness of capillary.Ball bonding according to the present invention is disperseed with golden (Au)
Gold (Au) particulate of copper wire, wire rod most surface will not be removed from the coating of palladium (Pd).Therefore, even if repeating to engage repeatedly,
The oxide of copper (Cu) will not also be attached to capillary, therefore will not pollute capillary.
Description of the drawings
Fig. 1 is the schematic diagram for the arc discharge for showing closing line.
Fig. 2 is the distribution image of the gold (Au) in the closing line surface of the present invention.
Fig. 3 is the distribution image of the palladium (Pd) in the closing line surface of the present invention.
Specific implementation mode
【Embodiment】
Core material is used in the material of the phosphorus (P) of 100 mass ppm of addition in the copper (Cu) of 99.999 mass % of purity or more
Material or un-added material, carry out it continuously casting, and rolled after intermediate heat-treatment (600 DEG C × 1 hour), it
After carry out bracing wire, and obtain with coated material it is coating before thick line (diameter 1.0mm).
Table 1
Herein, epidermis shown in table 1 gold value, be with the wire rod of 17 μm of the line footpath of 1 myriadmeter of aqua regia dissolution or so,
And it is molten with high-frequency induction coupled plasma ICP Atomic Emission Spectrophotometer method (ICPS-8100 of limited liability company of Shimadzu Seisakusho Ltd.) to acquire this
The concentration of gold (Au) and palladium (Pd) in liquid, then calculate its homogeneous film thickness in the line footpath of closing line from the concentration.That is, it is
With the obtained scaled value of the chemical analysis of ICP.
Then, prepare the coating of palladium (Pd) and the epidermis of gold (Au) shown in table 1, and be coated on the thick line
Periphery.The purity of the gold (Au) of epidermis is 99.9 mass % or more, and the purity of palladium (Pd) is 99 mass % or more.Later,
Continuous bracing wire is carried out with damp process by diamond bracing wire mould, then carries out 480 DEG C × 1 second Tempering and Quenching, finally obtains diameter
17 μm of ball bonding disperses copper wire with golden (Au).Using these examples as embodiment 1-20.Preferably, average diameter reducing rate is 6-
20%, final linear speed is 100-1000m/ points.Preferably, the copper (Cu) of core material it is coating it is preceding with 200-600 DEG C carry out 1 time
Heat treatment in 0.01-120 minutes.
(FAB stability tests)
FAB stability tests are carried out with following methods.
That is, as shown in 1 right column of table, for the wire rod of embodiment 1- embodiments 20, pass through K＆S corporation automatic wire bonding machines
IConnProCu, on the lead frame (QFP-200) of plating Ag, by 30 μm of melting soldered ball, so that crimping diameter becomes 40 μm, electricity
Flow valuve is 45mA, and the arc discharge time is 347 microseconds, and the first ball bonding is carried out with FAB to 1,000 wire rod.The result is shown in
1 right column of table.Herein, zero mark is to indicate that × mark then indicates " 1 or more " not because arc discharge causes soldered ball to deviate mandrel "
Wire rod there is a situation where soldered ball deviate mandrel ".From the test result, it can be seen that, ball bonding of the invention disperses copper with golden (Au)
Line will not occur to melt the uneven of soldered ball because of arc discharge.
(FAB deflection tests)
FAB deflection tests, it is identical as above-mentioned FAB stability tests, by automatic wire bonding machine IConnProCu, make electricity
Flow valuve is 45mA, and it is 347 microseconds to make the arc discharge time, and the first ball bonding is carried out with FAB to 1,000 wire rod.The result is shown
In 1 right column of table.Herein, zero mark is × mark the case where not causing soldered ball to deviate mandrel because melting climbing for soldered ball completely
Indicate that there is a situation where soldered balls of crawling for the wire rod of one or more.From the test result, it can be seen that, ball bonding of the invention is used golden (Au)
Dispersion copper wire will not crawl soldered ball.
Therefore it can be seen that, the wire rod of the embodiment of the present invention 1- embodiments 20, the shape for melting soldered ball is extremely stablized, and
The area of aluminium pad can be reduced.In addition it can be seen that, ball bonding of the invention disperses copper wire (embodiment 1- embodiments 20) with golden (Au), i.e.,
Make to engage repeatedly more than 1 myriadmeter, the case where all blocking without capillary, the flatness of capillary is good.In addition, also not observing weldering
The abrasion of needle inner face.Any ball bonding of the present invention disperses copper wire (embodiment 1- embodiments 20) with golden (Au), in the unwinding of wire rod
It is all good in experiment.
【Conventional example】
The closing line of palladium (Pd) coating 200 nanometers (nm) will only be formed as conventional example 1；Palladium (Pd) coating will be formed
The closing line of the epidermis 200 nanometers (nm) of 500 nanometers (nm), golden (Au) is as conventional example 2.With side identical with embodiment
The wire rod of these conventional examples 1 and 2 is carried out FAB stability tests and FAB deflection tests, obtains the result of 1 right column of table by formula.From
The result can clearly learn that the wire rod of conventional example 1 is performed poor in FAB stability tests, and the wire rod of conventional example 2 cannot be satisfied
FAB deflection tests.
【Comparative example】
It is 10 nanometers (nm) and 0.1 nanometer that palladium (Pd) coating 100 nanometers (nm), which will be formed, form golden (Au) theoretical film thickness
(nm) closing line is as comparative example 1 and 2.In a manner of identical with embodiment, FAB is carried out to the wire rod of these comparative examples 1 and 2
Stability test and FAB deflection tests, obtain the result of 1 right column of table.It can clearly be learnt from the result, the wire rod of comparative example 1, with
Conventional example 2 is identical, performs poor in FAB stability tests, and the wire rod of comparative example 2 is identical as conventional example 1, cannot be satisfied FAB
Deflection test.
(HAST experiments)
In addition, when carrying out HAST experiments (130 DEG C × 85RH (relative humidity)) experiment, though omit measurement result, phase
Compared with conventional example 1,2 and Comparative Examples 1 and 2, the service life of embodiment 1- embodiments 20 is all longer, and reliability is high.
【Industrial availability】
The ball bonding of the present invention disperses copper wire with golden (Au), replaces previous billon wire rod, in addition to general purpose I C, discrete type collection
Other than circuit (discrete IC), memory IC, it also can be used for the purposes of high temperature and humidity and require the IC of the LED of low cost
The semiconductor applications of encapsulation, vehicle-mounted semiconductor IC package etc..
Claims (6)
1. a kind of ball bonding gold dispersion copper wire, it is characterized in that：It is copper purity for 99.9 mass % or more copper alloy institute
The coating copper wire of ball bonding palladium that formation palladium coating and golden watch cortex and line footpath are 10-25 μm on the core material of composition, wherein described
The theoretical film thickness that gold passes through chemical analysis is 0.1 nanometer or more 10 nanometers or less；As obtained by the micro- surface analysis for visiting instrument of electronics
To gold distribution be：The gold particulate dotted is distributed on the palladium coating with countless.
2. ball bonding as described in claim 1 gold dispersion copper wire, wherein the copper alloy contains 3 mass ppm or more, 500 matter
Measure ppm phosphorus below.
3. ball bonding as described in claim 1 gold dispersion copper wire, wherein the copper alloy contains 50 mass ppm or more, 500 matter
Measure ppm gold below.
4. ball bonding as described in claim 1 gold dispersion copper wire, wherein the copper alloy contains 0.2 mass ppm or more, 100
Metallic element other than quality ppm phosphorus below and gold.
5. ball bonding as described in claim 1 gold dispersion copper wire, wherein contain 3 mass ppm or more 500 in the copper alloy
Quality ppm phosphorus below, 50 mass ppm or more, 500 mass ppm gold below, 0.2 mass ppm or more, 100 mass ppm or less
Other metallic elements, and the total amount of these elements be less than 1,000ppm.
6. ball bonding as described in claim 1 gold dispersion copper wire, wherein the theory film thickness is 2 nanometers or less.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015168593A JP6002299B1 (en) | 2015-08-28 | 2015-08-28 | Gold (Au) dispersed copper wire for ball bonding |
| JP2015-168593 | 2015-08-28 |
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| Publication Number | Publication Date |
|---|---|
| CN106486449A CN106486449A (en) | 2017-03-08 |
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| CN201610550457.9A Expired - Fee Related CN106486449B (en) | 2015-08-28 | 2016-07-13 | Ball bonding gold dispersion copper wire |
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|---|---|
| JP (1) | JP6002299B1 (en) |
| CN (1) | CN106486449B (en) |
| PH (1) | PH12016000302A1 (en) |
| SG (1) | SG10201606694PA (en) |
| TW (1) | TWI602934B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011013527A1 (en) * | 2009-07-30 | 2011-02-03 | 新日鉄マテリアルズ株式会社 | Bonding wire for semiconductor |
| JP4919364B2 (en) * | 2010-08-11 | 2012-04-18 | 田中電子工業株式会社 | Gold-coated copper wire for ball bonding |
| CN103339719A (en) * | 2011-12-21 | 2013-10-02 | 田中电子工业株式会社 | Pd-coated copper ball bonding wire |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4637256B1 (en) * | 2009-09-30 | 2011-02-23 | 新日鉄マテリアルズ株式会社 | Bonding wire for semiconductor |
-
2015
- 2015-08-28 JP JP2015168593A patent/JP6002299B1/en not_active Expired - Fee Related
-
2016
- 2016-06-01 TW TW105117168A patent/TWI602934B/en not_active IP Right Cessation
- 2016-07-13 CN CN201610550457.9A patent/CN106486449B/en not_active Expired - Fee Related
- 2016-08-12 SG SG10201606694PA patent/SG10201606694PA/en unknown
- 2016-08-26 PH PH12016000302A patent/PH12016000302A1/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011013527A1 (en) * | 2009-07-30 | 2011-02-03 | 新日鉄マテリアルズ株式会社 | Bonding wire for semiconductor |
| JP4919364B2 (en) * | 2010-08-11 | 2012-04-18 | 田中電子工業株式会社 | Gold-coated copper wire for ball bonding |
| CN103339719A (en) * | 2011-12-21 | 2013-10-02 | 田中电子工业株式会社 | Pd-coated copper ball bonding wire |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106486449A (en) | 2017-03-08 |
| JP6002299B1 (en) | 2016-10-05 |
| SG10201606694PA (en) | 2017-03-30 |
| TWI602934B (en) | 2017-10-21 |
| PH12016000302B1 (en) | 2018-03-05 |
| PH12016000302A1 (en) | 2018-03-05 |
| JP2017045914A (en) | 2017-03-02 |
| TW201708551A (en) | 2017-03-01 |
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