CN106483383B - The method for measurement of the dielectric coefficient of material - Google Patents
The method for measurement of the dielectric coefficient of material Download PDFInfo
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- CN106483383B CN106483383B CN201510523374.6A CN201510523374A CN106483383B CN 106483383 B CN106483383 B CN 106483383B CN 201510523374 A CN201510523374 A CN 201510523374A CN 106483383 B CN106483383 B CN 106483383B
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Abstract
A kind of method for measurement of the dielectric coefficient of material, it comprises the steps of and a probe of a material position sensor is inserted into a tub, so that a part setting of the probe is located at the one of the tub and is not filled by area, and another part of the probe is set in a fill area of the tub;The material position sensor carries out the material level measurement of a material to obtain a First Eigenvalue;The material position sensor is vertically moved into a vertical range, so that the probe of the material position sensor does not leave the fill area of the tub fully;The material position sensor carries out the material level measurement of the material to obtain a Second Eigenvalue;The First Eigenvalue is subtracted the Second Eigenvalue to obtain a characteristic value variable quantity by the material position sensor;The material position sensor calculates this feature value variable quantity to obtain the dielectric coefficient of the material.
Description
Technical field
The present invention relates to a kind of method for measurement of dielectric coefficient, in particular to a kind of measurement side of the dielectric coefficient of material
Method.
Background technique
Currently, material position sensor, such as Time Domain Reflectometry radar sensor, it is widely deployed in material level measurement;Therefore, expect
Position sensing device is important in the extreme.
However, the accuracy for thering are several factors to will affect material position sensor, such as the dielectric coefficient of material.This is because object
The dielectric coefficient of material will affect the two-way time of the measurement signal in material, so that the accuracy of material position sensor is affected.
However, at present in material position sensor, such as Time Domain Reflectometry radar sensor, after installing, the dielectric system of material
Number is there is no accurately and easily being measured, so that the accuracy of material position sensor reduces.
Summary of the invention
The shortcomings that improve the above-mentioned prior art, the purpose of the present invention is to provide a kind of measurements of the dielectric coefficient of material
Method.
To reach above-mentioned purpose of the invention, the method for measurement of the dielectric coefficient of material of the invention is applied to a material position sense
Device, a tub and a material are surveyed, which includes a material position sensing circuit and a probe, which from top to bottom has
One is not filled by area and the fill area full of the material, and the method for measurement of the dielectric coefficient of the material includes: by the material position sense
Survey device the probe be inserted into the tub so that the probe of the material position sensor a part setting be located at the tub this not
In fill area, and another part of the probe of the material position sensor is set in the fill area of the tub, and the material position sense
It surveys device and is located at a first position;After the material position sensor is located at the first position, which carries out the material
Material level measurement is to obtain a First Eigenvalue;After obtaining the First Eigenvalue, which is vertically moved one and is hung down
Straight distance, so that the probe of the material position sensor does not leave the fill area of the tub, and the material position sensor system fully
Positioned at a second position;After the material position sensor is located at the second position, which carries out the material position of the material
It measures to obtain a Second Eigenvalue;The First Eigenvalue is subtracted the Second Eigenvalue to obtain a spy by the material position sensing circuit
Value indicative variable quantity;And the dielectric coefficient that the material position sensing circuit calculates this feature value variable quantity to obtain the material.
Furthermore in a specific embodiment, the method for measurement of the dielectric coefficient of material as described above, wherein the material position is sensed
Device can be for example but the present invention is not limited to a Time Domain Reflectometry radar sensor.
Furthermore in a specific embodiment, the method for measurement of the dielectric coefficient of material as described above, the wherein fisrt feature
Value is one first travel-time difference value.
Furthermore in a specific embodiment, the method for measurement of the dielectric coefficient of material as described above, the wherein second feature
Value is one second travel-time difference value.
Furthermore in a specific embodiment, the method for measurement of the dielectric coefficient of material as described above, wherein when the material position sense
Device is surveyed when being located at the first position, a part setting of the probe of the material position sensor is not filled by area positioned at this of the tub
Length be one first length, and another part of the probe of the material position sensor is set in the fill area of the tub
Length is one second length.
Furthermore in a specific embodiment, the method for measurement of the dielectric coefficient of material as described above, wherein this is first when walking
Difference is equal to a first time plus one second time;This is equal to twice first length divided by an air wave at the first time
Speed;Second time, second length equal to twice was divided by a material velocity of wave.
Furthermore in a specific embodiment, the method for measurement of the dielectric coefficient of material as described above, wherein a third length
The vertical range is added equal to first length;One the 4th length is equal to second length and cuts the vertical range.
Furthermore in a specific embodiment, the method for measurement of the dielectric coefficient of material as described above, wherein this is second when walking
Difference is equal to the third time plus one the 4th time;The third time, the third length equal to twice was divided by the air wave
Speed;4th time, the 4th length equal to twice was divided by the material velocity of wave.
Furthermore in a specific embodiment, the method for measurement of the dielectric coefficient of material as described above, the wherein atmospheric celerity
System is a constant;The square root of the dielectric coefficient is a square root;The material velocity of wave is equal to the constant divided by the square root.
Furthermore in a specific embodiment, the method for measurement of the dielectric coefficient of material as described above, wherein the material position is sensed
Circuit when device further includes an expansion;When the expansion circuit by this feature value variable quantity multiplied by a yield value so that this feature value variable quantity
Unit be amplified to millisecond from microsecond.
Effect of the invention is to measure and calculate the dielectric coefficient of material to improve the accuracy of material position sensor.
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail, but not as a limitation of the invention.
Detailed description of the invention
Fig. 1 is the method for measurement flow chart of the dielectric coefficient of material of the invention;
Fig. 2 a is the schematic diagram that the material position sensor is located at the first position;
Fig. 2 b is the schematic diagram that the material position sensor is located at the second position;
Fig. 3 is the first travel-time difference value and a specific embodiment waveform diagram of the second travel-time difference value;
Fig. 4 a is a part of schematic diagram of the method for measurement of the depth of material;
Fig. 4 b is another part schematic diagram of the method for measurement of the depth of material.
Wherein, appended drawing reference
Material position sensor 10
Material position sensing circuit 12
Probe 14
Tub 20
It is not filled by area 22
Fill area 24
Material 30
Constant c
Third length d3
4th length d4
First length dair
Second length dm
Vertical range Hair
Vertical range Hm
Probe length Lt
Depth Lm
Step S02
Step S04
Step S06
Step S08
Step S10
Step S12
First time t01
Second time t0 2
Third time t0 3
4th time t0 4
First travel-time difference value t1
Second travel-time difference value t2
Third travel-time difference value t3
4th travel-time difference value t4
Atmospheric celerity Vair
Material velocity of wave Vm
Dielectric coefficient ε
Square root √ ε
Specific embodiment
Detailed description for the present invention and technology contents please refer to detailed description and accompanying drawings below and are described as follows, and
Attached drawing and detailed description as illustrative purposes only, are not intended to limit the present invention.
Referring to FIG. 1, its method for measurement flow chart for the dielectric coefficient of material of the invention;And it please also refer to figure
2a is located at the schematic diagram of the first position for the material position sensor;And please also refer to Fig. 2 b, it is the material position sensor position
Schematic diagram in the second position.
The method for measurement system of the dielectric coefficient of material of the invention is applied to a material position sensor 10, a tub 20 and an object
Material 30;The material position sensor 10 includes a material position sensing circuit 12 and a probe 14;The tub 20 from top to bottom has one not fill out
Fill area 22 and the fill area 24 full of the material 30;The material position sensor 10 can be for example but the present invention is not limited to for the moment
Radar sensor is reflected in domain.The method for measurement of the dielectric coefficient ε of the material 30 comprises the steps of.
Firstly, please referring to Fig. 1 and Fig. 2 a.
Step S02: the probe 14 of the material position sensor 10 is inserted into the tub 20, so that the material position sensor 10
A part setting of the probe 14 be located at the tub 20 this be not filled by area 22, and the probe 14 of the material position sensor 10
Another part is set in the fill area 24 of the tub 20, and the material position sensor 10 is located at a first position (i.e. such as Fig. 2 a
It is shown).
Step S04: after the material position sensor 10 is located at the first position, which carries out the material 30
Material level measurement to obtain a First Eigenvalue (being detailed later).
Then, Fig. 1 and Fig. 2 b is please referred to.
Step S06: after obtaining the First Eigenvalue, which is vertically moved into a vertical range Hair
(or a vertical range Hm), so that the probe 14 of the material position sensor 10 does not leave the fill area of the tub 20 fully
24, and the material position sensor 10 is located at a second position (i.e. as shown in Figure 2 b).Wherein, vertical range Hair hangs down equal to this
Directly distance Hm.
Step S08: after the material position sensor 10 is located at the second position, which carries out the material 30
Material level measurement to obtain a Second Eigenvalue (being detailed later).
Step S10: the First Eigenvalue is subtracted the Second Eigenvalue to obtain a characteristic value by the material position sensing circuit 12
Variable quantity (is detailed later).
Step S12: the material position sensing circuit 12 calculates this feature value variable quantity to obtain the dielectric coefficient ε of the material 30
(being detailed later).
The following contents will be described in detail above-mentioned step S02 and step S04;Referring again to Fig. 1 and Fig. 2 a.
When the material position sensor 10 is located at the first position (i.e. as shown in Figure 2 a), the probe of the material position sensor 10
14 a part setting be located at the tub 20 this be not filled by the length in area 22 be one first length dair, and the material position sense
It is one second length dm that another part of the probe 14 of device 10, which is set to the length in the fill area 24 of the tub 20,.
The First Eigenvalue is one first travel-time difference value t1;The first travel-time difference value t1 is equal to a first time t01 and adds
One second time t0 2;The the first length dair of first time t01 equal to twice is divided by an atmospheric celerity Vair;This second
The the second length dm of time t0 2 equal to twice is divided by a material velocity of wave Vm.
Above content can be expressed with following equation:
T1=t01+t02=(2*dair/Vair)+(2*dm/Vm)
The following contents will be described in detail above-mentioned step S06 and step S08;Referring again to Fig. 1 and Fig. 2 b.One third is long
It spends d3 and is equal to the first length dair plus vertical range Hair;One the 4th length d4 cuts this equal to second length dm and hangs down
Directly distance Hm (also that is, the second length dm, which is equal to the 4th length d4, adds the vertical range Hm).
The Second Eigenvalue is one second travel-time difference value t2;The second travel-time difference value t2 is equal to a third time t0 3 and adds
One the 4th time t0 4;The third length d3 of the third time t0 3 equal to twice is divided by atmospheric celerity Vair;When the 4th
Between t04 equal to twice of the 4th length d4 divided by material velocity of wave Vm.
Above content can be expressed with following equation:
T2=t03+t04=(2*d3/Vair)+(2*d4/Vm)=[2* (dair+Hair)/Vair]+[2* (dm-Hm)/
Vm]
Wherein, vertical range Hair is equal to vertical range Hm.
The following contents will be described in detail above-mentioned step S10;The First Eigenvalue (i.e. first travel-time difference value t1) subtracts
The Second Eigenvalue (i.e. second travel-time difference value t2) is equal to this feature value variable quantity;According to those above-mentioned formula, this feature value
Variable quantity is equal to twice negative of vertical range Hair divided by atmospheric celerity Vair, along with twice of vertical range Hm
Divided by material velocity of wave Vm.
Above content can be expressed with following equation:
This feature value variable quantity=t1-t2=(- 2*Hair/Vair)+(2*Hm/Vm)
Referring to FIG. 3, it is the first travel-time difference value and a specific embodiment waveform diagram of the second travel-time difference value;And it asks
Fig. 2 a and Fig. 2 b are referred to when figure.As shown in figure 3, in a specific embodiment, because atmospheric celerity Vair can be greater than the material wave
Fast Vm, so the second travel-time difference value t2 will be shorter than the first travel-time difference value t1;Also that is, the first travel-time difference value t1 is longer than this
Second travel-time difference value t2.
The following contents will be described in detail above-mentioned step S12;This feature value variable quantity is calculated to obtain Jie of the material 30
Electrostrictive coefficient ε.Wherein, atmospheric celerity Vair system is a constant c;The square root of dielectric coefficient ε is a square root √ ε;It should
Material velocity of wave Vm is equal to constant c divided by square root √ ε.
Above content can be expressed with following equation:
Vm=c/ √ ε
Therefore, this feature value variable quantity=t1-t2=(- 2*Hair/Vair)+(2*Hm/Vm)=(- 2*Hair/c)+[2*
Hm/ (c/ √ ε)]=(- 2*Hair/c)+(√ ε * 2*Hm/c)=(- 2*Hair/c)+(√ ε * 2*Hair/c)=2*Hair* (√
ε–1)/c
Therefore, this feature value variable quantity * c/ (2*Hair)=√ ε -1
[this feature value variable quantity * c/ (2*Hair)]+1=√ ε
{ [this feature value variable quantity * c/ (2*Hair)]+1 } 2=ε
As previously mentioned, the First Eigenvalue (i.e. first travel-time difference value t1) subtracts the Second Eigenvalue, (i.e. this second is walked
Time difference value t2) it is equal to this feature value variable quantity, and the first travel-time difference value t1 and the second travel-time difference value t2 can be by the material position senses
It surveys device 10 to learn, therefore it can be seen that this feature value variable quantity.Constant c and vertical range Hair is known;Therefore, by upper
Dielectric coefficient ε can be obtained by stating formula.
After obtaining dielectric coefficient ε by the method for measurement of the dielectric coefficient ε of the material 30 of the invention, Ji Keli
The depth of the material 30 is obtained with dielectric coefficient ε;Hereby details are as follows.
Fig. 4 a is please referred to, is a part of schematic diagram of the method for measurement of the depth of material;And please also refer to Fig. 4 b,
For another part schematic diagram of the method for measurement of the depth of material.Lm indicates the depth of the material 30;Lt indicates the probe 14
Probe length (also that is, depth of the tub 20);T3 indicates third travel-time difference value;T4 indicates the 4th travel-time difference value;Therefore, it can obtain
To following equation.
T3=[2* (Lt-Lm)/Vair]+(2*Lm/Vm)
T4=2*Lt/Vair
Vair=c
Vm=c/ √ ε
T3-t4=(- 2*Lm/c)+[2*Lm/ (c/ √ ε)]=(- 2*Lm/c)+(2*Lm* √ ε/c)=2*Lm* (√ ε-
1)/c
Since third travel-time difference value t3, the 4th travel-time difference value t4, dielectric coefficient ε and constant c are known;Cause
This, the depth Lm of the material 30 can be obtained by above-mentioned formula.
Furthermore to increase the availability of the material position sensor 10, circuit (is not shown when which further includes an expansion
It is shown in Fig. 2 a, Fig. 2 b, Fig. 4 a and Fig. 4 b, and is set within the material position sensing circuit 12);Circuit is by the above-mentioned spy when expansion
Value indicative variable quantity (that is, t1-t2 or t3-t4) is multiplied by a yield value, so that the unit of this feature value variable quantity is amplified from microsecond
To millisecond;Whereby, increase the availability of the material position sensor 10.
Effect of the invention is to measure and calculate the dielectric coefficient ε of the material 30 to improve the essence of the material position sensor 10
Exactness.
Certainly, the present invention can also have other various embodiments, without deviating from the spirit and substance of the present invention, ripe
It knows those skilled in the art and makes various corresponding changes and modifications, but these corresponding changes and change in accordance with the present invention
Shape all should fall within the scope of protection of the appended claims of the present invention.
Claims (10)
1. a kind of method for measurement of the dielectric coefficient of material is applied to a material position sensor, a tub and a material, the material position sense
Survey device include a material position sensing circuit and a probe, the tub from top to bottom have one be not filled by area and full of the material one
Fill area, which is characterized in that the method for measurement of the dielectric coefficient of the material includes:
A. the probe of the material position sensor is inserted into the tub, so that a part setting of the probe of the material position sensor
This positioned at the tub is not filled by area, and another part of the probe of the material position sensor is set to the filling of the tub
In area, and the material position sensor is located at a first position;
B. after the material position sensor is located at the first position, which carries out the material level measurement of the material to obtain
One the First Eigenvalue;
C. after obtaining the First Eigenvalue, which is vertically moved into a vertical range, so that the material position senses
The probe of device does not leave the fill area of the tub fully, and the material position sensor is located at a second position;
D. after the material position sensor is located at the second position, which carries out the material level measurement of the material to obtain
One Second Eigenvalue;
E. the First Eigenvalue is subtracted the Second Eigenvalue to obtain a characteristic value variable quantity by the material position sensing circuit;And
F. the dielectric coefficient that the material position sensing circuit calculates this feature value variable quantity to obtain the material,
The wherein calculation formula of the dielectric coefficient of the material are as follows:
The dielectric coefficient of the material={ [mono- atmospheric celerity of this feature value variable quantity */(the 2* vertical range)]+1 }2。
2. the method for measurement of the dielectric coefficient of material according to claim 1, which is characterized in that the material position sensor is one
Time Domain Reflectometry radar sensor.
3. the method for measurement of the dielectric coefficient of material according to claim 2, which is characterized in that the First Eigenvalue is one
First travel-time difference value.
4. the method for measurement of the dielectric coefficient of material according to claim 3, which is characterized in that the Second Eigenvalue is one
Second travel-time difference value.
5. the method for measurement of the dielectric coefficient of material according to claim 4, which is characterized in that when the material position sensor position
When the first position, the probe of the material position sensor a part setting be located at the tub this be not filled by the length in area
For one first length, and the length that another part of the probe of the material position sensor is set in the fill area of the tub is
One second length.
6. the method for measurement of the dielectric coefficient of material according to claim 5, which is characterized in that the first travel-time difference value etc.
Added for one second time in a first time;This is equal to twice first length divided by the atmospheric celerity at the first time;This
Two times, second length equal to twice was divided by a material velocity of wave.
7. the method for measurement of the dielectric coefficient of material according to claim 6, which is characterized in that a third length is equal to should
First length adds the vertical range;One the 4th length is equal to second length and cuts the vertical range.
8. the method for measurement of the dielectric coefficient of material according to claim 7, which is characterized in that the second travel-time difference value etc.
Added for one the 4th time in the third time;The third time, the third length equal to twice was divided by the atmospheric celerity;This
Four times, the 4th length equal to twice was divided by the material velocity of wave.
9. the method for measurement of the dielectric coefficient of material according to claim 8, which is characterized in that the atmospheric celerity is one normal
Number;The square root of the dielectric coefficient is a square root;The material velocity of wave is equal to the constant divided by the square root.
10. the method for measurement of the dielectric coefficient of material according to claim 9, which is characterized in that the material position sensor is more
Circuit when expanding comprising one;When the expansion circuit by this feature value variable quantity multiplied by a yield value so that the list of this feature value variable quantity
Position is amplified to millisecond from microsecond.
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CN101957404A (en) * | 2009-07-20 | 2011-01-26 | 中国科学院遥感应用研究所 | Microwave measurement method of dielectric constant of grain pile |
CN104375009A (en) * | 2014-11-24 | 2015-02-25 | 国家电网公司 | Portable seasonal factor tester |
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US5898308A (en) * | 1997-09-26 | 1999-04-27 | Teleflex Incorporated | Time-based method and device for determining the dielectric constant of a fluid |
CN101896797A (en) * | 2007-12-18 | 2010-11-24 | 恩德莱斯和豪瑟尔两合公司 | Method for filling level measurement |
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