CN106477514B - MEMS and forming method thereof - Google Patents

MEMS and forming method thereof Download PDF

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CN106477514B
CN106477514B CN201510540807.9A CN201510540807A CN106477514B CN 106477514 B CN106477514 B CN 106477514B CN 201510540807 A CN201510540807 A CN 201510540807A CN 106477514 B CN106477514 B CN 106477514B
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substrate
opening
front surface
depth
size
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CN106477514A (en
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郑超
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Semiconductor Manufacturing International Shanghai Corp
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Semiconductor Manufacturing International Shanghai Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0083—Optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045

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Abstract

The forming method of a kind of MEMS and forming method thereof, wherein MEMS includes：First substrate is provided；Along the first substrate of the first substrate front surface rearwardly etched open mouth region, the first opening is formed in the substrate of external zones first, the 3rd opening is formed in the substrate of center first, and the first opening is more than the 3rd opening positioned at the first intrabasement depth and is located at the first intrabasement depth；Photosensitive layer is formed in the first open bottom and sidewall surfaces, the 3rd open bottom and sidewall surfaces；First substrate front surface is bonded with the second substrate；The patterned mask layer for exposing the backside of substrate of open region first is formed in the first backside of substrate；Using patterned mask layer as mask, the first substrate is etched using dry etch process, forms bottom to the recessed groove in the first substrate front surface direction, and the groove exposes the photosensitive layer on the first open bottom surface and the 3rd open bottom surface.The present invention improves the performance for the MEMS to be formed.

Description

MEMS and forming method thereof
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of MEMS and forming method thereof.
Background technology
MEMS (Micro-Electro Mechanical System, abbreviation MEMS) mainly include micro mechanism, Several parts such as microsensor, micro actuator and corresponding process circuit, it is to merge a variety of Micrometer-Nanometer Processing Technologies, and should With the high-tech front subject to grow up on the basis of the newest fruits of modern information technologies.
The development of MEMS technology opens a brand-new technical field and industry, the micro sensing made using MEMS technology Device, microactrator, micro partses, Micromechanical Optics device, vacuum microelectronic device, power electronic devices etc. Aeronautics and Astronautics, Suffered from automobile, biomedicine, environmental monitoring, military affairs and all spectra that almost people are touched it is very wide should Use prospect.
In the prior art, the processing step applied to the MEMS of optical field includes：A substrate is provided, along substrate just Performed etching towards the back side, some openings are formed in the substrate, the opening depth is less than the thickness of substrate；Opened described Mouth bottom and sidewall surfaces form photosensitive layer；Support plate is provided, the substrate front surface is bonded with support plate so that opening is inscribed Nearly vacuum environment；Then backside of substrate is performed etching to form groove, the groove exposes the photosensitive layer on open bottom surface.
However, the MEMS formed in the prior art has much room for improvement to extraneous light sensing ability so that formation The poor-performing of MEMS.
The content of the invention
The present invention solves the problems, such as to be to provide a kind of MEMS and forming method thereof, improves MEMS and sense ambient light The ability of line, so as to improve the performance of the MEMS of formation.
To solve the above problems, the present invention provides a kind of forming method of MEMS, including：Offer includes open region First substrate, first substrate include front and the back side relative with the front, wherein, the open region includes center And the external zones around the center；The first substrate of the open region is rearwardly etched along first substrate front surface, Some first openings are formed in the first substrate of the external zones, some three are formed in the first substrate of the center Opening, and the first opening is open more than the 3rd positioned at the first intrabasement depth and is located at the first intrabasement depth, described first The depth of opening, the depth of the 3rd opening are less than the thickness of the first substrate；In first open bottom and sidewall surfaces and 3rd open bottom and sidewall surfaces form photosensitive layer；Second substrate is provided；After the photosensitive layer is formed, by described first Substrate front surface is bonded with second substrate；The first backside of substrate after bonding forms patterned mask layer, described Patterned mask layer exposes the first backside of substrate of open region；Using the patterned mask layer as mask, using dry method Etching technics etches first substrate along the first backside of substrate to front, and it is recessed to the first substrate front surface direction to form bottom Groove, and the groove exposes the photosensitive layer on the first open bottom surface and the photosensitive layer on the 3rd open bottom surface.
Optionally, size of first opening with the 3rd opening on parallel to the first substrate front surface direction is identical；Or Person, the size of first opening on parallel to the first substrate front surface direction be more than the 3rd opening parallel to the first substrate just Size on the direction of face.
Optionally, the open region also includes the transition region between center and external zones, wherein, the transition region Around the center, the external zones is around the transition region；Some second are also formed in the first substrate of transition region to open Mouthful.
Optionally, the depth that second opening is located in the first substrate is equal to or more than the 3rd opening and is located at the first substrate In depth.
Optionally, second opening is located at the depth in the first substrate and is more than the depth that the 3rd opening is located in the first substrate When spending, on the direction for pointing to center along the external zones, the second different openings of transition region are located in the first substrate Depth is identical or less and less.
Optionally, first opening, the chi of the second opening and the 3rd opening on parallel to the first substrate front surface direction It is very little identical.
Optionally, the depth of second opening is equal to the depth of the 3rd opening, forms first opening, the second opening And the 3rd opening processing step include：The first graph layer with some grooves is formed in first substrate front surface, and The groove above groove, transition region above external zones and the groove above center are parallel to the first substrate front surface side Upward size is identical；The first substrate using first graph layer as mask etching segment thickness, in the first base of external zones First is formed in bottom to be open in advance, and the second opening is formed in the first substrate of transition region, is formed in the first substrate of center 3rd opening；Remove first graph layer；Second graph is formed in the second opening, the 3rd opening and the first substrate front surface Layer；Using the second graph layer as mask, etching removes the first substrate of the segment thickness positioned at the first pre- opening lower section, is formed First opening.
Optionally, when the depth of second opening is more than the depth of the 3rd opening, formation first opening, second open Mouth and the processing step of the 3rd opening include：The first graph layer with some grooves is formed in first substrate front surface, And the groove above external zones, the groove above transition region and the groove above center are parallel to the first substrate front surface Size on direction is identical；The first substrate using first graph layer as mask etching segment thickness, the first of external zones First is formed in substrate to be open in advance, the second pre- opening is formed in the first substrate of transition region, in the first substrate of center Form the 3rd opening；Remove first graph layer；Second graph layer is formed in the 3rd opening and the first substrate front surface；With institute It is mask to state second graph layer, and etching removes the first substrate of the segment thickness positioned at the first pre- opening lower section, and etching removes position In the first substrate of the segment thickness of the second pre- opening lower section, second opening is formed；Remove the second graph layer； Second opening, the 3rd opening and the first substrate front surface form the 3rd graph layer；Using the 3rd graph layer as mask, etching is gone Except the first substrate of the segment thickness positioned at the first pre- opening lower section, first opening is formed.
Optionally, size of first opening on parallel to the first substrate front surface direction is more than the described 3rd opening and existed Parallel to the size on the first substrate front surface direction.
Optionally, size of second opening on parallel to the first substrate front surface direction is equal to or more than the 3rd opening Size on parallel to the first substrate front surface direction.
Optionally, it is described second opening parallel to the first substrate front surface direction size be more than the 3rd opening parallel to During size on the first substrate front surface direction, on the direction that peripherally area points to center, different second of transition region open Mouth is equal sized or less and less on parallel to the first substrate front surface direction.
Optionally, size of first opening on parallel to the first substrate front surface direction is 50 microns to 80 microns； Size of 3rd opening on parallel to the first substrate front surface direction is 30 microns to 50 microns.
Optionally, forming the processing step of first opening, the second opening and the 3rd opening includes：Described first Substrate front surface forms the graph layer with some grooves, and the groove above external zones is on parallel to the first substrate front surface direction Size be more than size of the groove on parallel to the first substrate front surface direction above center；Using the graph layer to cover Film, along the first substrate of the recess etch segment thickness, form first opening, the second opening and the 3rd opening；Remove The graph layer.
Optionally, size of the groove above the transition region on parallel to the first substrate front surface direction is more than or equal to Size of the groove on parallel to the first substrate front surface direction above center.
Optionally, the material of the photosensitive layer is silica.
Optionally, the bonding is carried out using vacuum bonding technique.
The present invention also provides a kind of MEMS, including：The first substrate including open region, first substrate are included just Face and the back side relative with the front, wherein, the open region includes center and the external zones around the center；Position Some first openings in the first substrate of external zones, some 3rd openings in the first substrate of center, and the One opening is more than the 3rd opening positioned at the first intrabasement depth and be located at intrabasement depth, the described first depth being open, the The depth of three openings is less than the thickness of the first substrate；Positioned at first open bottom and sidewall surfaces and the 3rd open bottom Portion and sidewall surfaces form photosensitive layer；The second substrate being mutually bonded with the front of first substrate；Positioned at first base The groove at the back side in bottom opening area, the channel bottom is recessed to the first substrate front surface direction, and the groove exposes first The photosensitive layer on open bottom surface and the photosensitive layer on the 3rd open bottom surface.
Optionally, size of first opening with the 3rd opening on parallel to the first substrate front surface direction is identical；Or Person, the size of first opening on parallel to the first substrate front surface direction be more than the 3rd opening parallel to the first substrate just Size on the direction of face.
Optionally, the open region also includes the transition region between center and external zones, wherein, the transition region Around the center, the external zones is in the transition region, the first substrate of the transition region formed with some second Opening, and second opening is located at the depth in the first substrate and is equal to or more than the depth that the 3rd opening is located in the first substrate Degree.
Optionally, the material of the photosensitive layer is silica.
Compared with prior art, technical scheme has advantages below：
In the technical scheme of the forming method of MEMS provided by the invention, due to being etched by dry etch process The influence of load effect problem so that the trench bottom surfaces that the first backside of substrate of etching is formed are recessed to the first substrate front surface, Therefore the depth of the groove central area is more than the depth of trenched side-wall near zone.And in the present invention, the of external zones The first opening is formed in one substrate, the 3rd opening is formed in the first substrate of center, and the first opening is located at the first substrate Interior depth is more than the 3rd opening and is located at the first intrabasement depth, and the first opening is located at trenched side-wall near zone so that bottom Portion surface can either be exposed the photosensitive layer on the 3rd open bottom surface to the groove that the first substrate front surface is recessed, and also can It is exposed the photosensitive layer on the first open bottom surface.Therefore, the present invention can overcome etching load effect caused by not Good influence so that the photosensitive layer on the first opening and the 3rd open bottom surface can be exposed so that MEMS pair The sensing capability of ambient is strong, so as to improve the performance of the MEMS of formation, improves the yield of the MEMS of formation.
Further, the opening also includes the transition region between center and external zones, also first in transition region Some second openings are formed in substrate, and the depth that the second opening is located in the first substrate is equal to or more than the 3rd opening positioned at the Depth in one substrate.Due to second opening depth be not less than the 3rd opening depth, therefore formed groove also can will The photosensitive layer on the second open bottom surface is exposed.
Further, size of first opening on parallel to the first substrate front surface direction is more than the 3rd opening in the present invention Size on parallel to the first substrate front surface direction so that forming the processing step of the first opening and the 3rd opening includes： First substrate front surface forms the graph layer with some grooves, and the groove above external zones parallel to the first substrate just Size on the direction of face is more than size of the groove on parallel to the first substrate front surface direction above center；With the figure Layer is mask, and along the first substrate of recess etch segment thickness, the first opening is formed in the substrate of external zones first, while in The 3rd opening is formed in the substrate of heart district first.Technique and one of etching work in the present invention only by forming graph layer together Skill, you can form the first opening and the 3rd opening for meeting different depth requirement, so as to save production cost, reduce technique Difficulty, and avoid and repeatedly form the alignment error problem that graph layer is likely to occur, so as to improve the MEMS to be formed Reliability.
The present invention also provides a kind of structural behaviour superior MEMS, including：The first substrate including open region, it is described First substrate includes front and the back side relative with the front, wherein, the open region include center and it is circular it is described in The external zones of heart district；If some first openings in the first substrate of external zones, in the first substrate of center Dry 3rd opening, and the first opening is more than the 3rd opening positioned at the first intrabasement depth and is located at intrabasement depth, described the The depth of one opening, the depth of the 3rd opening are less than the thickness of the first substrate；Positioned at first open bottom and sidewall surfaces, And the 3rd open bottom and sidewall surfaces form photosensitive layer；The second substrate being mutually bonded with the front of first substrate； Groove positioned at the back side of the first substrate open region, the channel bottom are recessed and described to the first substrate front surface direction Groove exposes the photosensitive layer on the first open bottom surface and the photosensitive layer on the 3rd open bottom surface.First opening in the present invention The photosensitive layer of lower surface and the photosensitive layer on the 3rd open bottom surface are exposed so that photosensitive layer senses ambient light The ability of line is improved, therefore MEMS provided by the invention has superior performance.
Brief description of the drawings
Fig. 1 is the cross-sectional view for the MEMS that prior art provides；
Fig. 2 to Figure 13 is the structural representation for the MEMS forming process that one embodiment of the invention provides；
Figure 14 to Figure 20 is the cross-sectional view for the MEMS forming process that another embodiment of the present invention provides.
Embodiment
From background technology, the performance for the MEMS that prior art is formed has much room for improvement.
With reference to figure 1, the formation process of MEMS comprises the following steps：
The first substrate 100 is provided, first substrate 100 has front and the back side relative with the front；Along first Graphical first substrate 100 in the positive rearwardly direction of substrate 100, some openings are formed in first substrate 100 101, the depth that different openings 101 are located in the first substrate 100 is consistent；Sense is formed in 101 bottoms of the opening and sidewall surfaces Photosphere 102；The front of first substrate 100 is bonded with the surface of the second substrate 103；After bonding, in the first substrate 100 back sides form patterned mask layer (not shown)；Using the patterned mask layer as the first substrate described in mask etching 100, groove 104 is formed in first substrate 100, and institute's groove 104 exposes the photosensitive layer of 101 lower surfaces of opening 102。
Research finds that the lower surface of groove 104 formed using the above method is led to the positive recessed of the first substrate 100 The groove 104 for causing to be formed fails the photosensitive layer 102 of all lower surfaces of opening 101 being exposed.
Further study show that because the technique for forming groove 104 is dry etch process, dry etch process can be by The influence of load effect (Etch Loading) is etched, and the bigger etching load effect of width dimensions of groove 104 is more obvious, makes The lower surface of groove 104 that must be formed is positive recessed to the first substrate 100, therefore when the lower surface of groove 104 is recessed most deep When photosensitive layer 102 near region 120 is exposed, the lower surface of opening 101 near the sidewall surfaces of groove 104 it is photosensitive Layer 102 is not exposed yet.One of the reason for producing etching load effect is：Due to being not by the material below mask layer The material being etched is needed, during dry etching forms groove 104, the depth of groove 104 gradually deepens, and etches gas The collide centre position of backward groove 104 of body and the sidewall surfaces of groove 104 is spread, and causes the centre position of groove 104 Etching gas flow is maximum so that the lower surface of groove 104 ultimately formed is recessed to the positive direction of the first substrate 100, therefore The position that the lower surface of groove 104 is in the first substrate 100 is different, in turn results in groove 104 and fails all openings 101 The photosensitive layer 102 of lower surface is exposed.
To solve the above problems, the present invention provides a kind of the first substrate for providing and including open region, the first substrate bag Front and the back side relative with the front are included, wherein, the open region includes center and around the outer of the center Enclose area；Along the first substrate of the first substrate front surface rearwardly etched open mouth region, some are formed in the first substrate of external zones One opening, some 3rd openings are formed in the first substrate of center, and the first opening is big positioned at the first intrabasement depth It is located at the first intrabasement depth in the 3rd opening；In first open bottom and sidewall surfaces and the second open bottom Photosensitive layer is formed with sidewall surfaces；First substrate front surface is bonded with the second substrate；The first substrate after bonding Surface forms patterned mask layer, and the patterned mask layer exposes the first backside of substrate of open region；With the figure The mask layer of shape is mask, etches first substrate along the first backside of substrate to front using dry etch process, is formed Bottom to the recessed groove in the first substrate front surface direction, and the groove expose the first open bottom surface photosensitive layer and The photosensitive layer on the 3rd open bottom surface.
Because the etching load effect problem by dry etch process is influenceed so that the first backside of substrate of etching is formed Trench bottom surfaces be recessed to the first substrate front surface, therefore the depth of the groove central area be more than trenched side-wall nearby area The depth in domain；And in the present invention, the first opening is formed in the first substrate of external zones, is formed in the first substrate of center 3rd opening, and the first opening is open more than the 3rd positioned at the first intrabasement depth and is located at the first intrabasement depth, first Opening is located at trenched side-wall near zone, therefore the lower surface can either make the 3rd to the groove that the first substrate front surface is recessed The photosensitive layer on open bottom surface is exposed, and the photosensitive layer on the first open bottom surface can also be exposed.Therefore, The present invention can overcome harmful effect caused by etching load effect so that the first opening is photosensitive with the 3rd open bottom surface Layer can be exposed, so as to improve the performance of the MEMS of formation.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention Specific embodiment be described in detail.
Fig. 2 to Figure 13 is the structural representation for the MEMS forming process that one embodiment of the invention provides.
It is schematic top plan view with reference to figure 2 and Fig. 3, Fig. 2, Fig. 3 is cross-sectional views of the Fig. 2 along line of cut AA1, there is provided The first substrate 201 including open region 210, first substrate 201 include front and the back side relative with the front, its In, the open region 210 includes center 211, around the transition region 212 of the center 211 and around the transition region 212 external zones 213.
The material of first substrate 201 is silicon, germanium, SiGe, carborundum or GaAs, and first substrate 201 is also Can be silicon substrate, the germanium substrate on insulator or the silicon-Germanium substrate on insulator on insulator.
In the present embodiment, the material of first substrate 201 is silicon.Can also be formed with device in first substrate 201 Part, such as nmos pass transistor, PMOS transistor, CMOS transistor, resistor, capacitor, inductor or interconnection structure.
Extended meeting forms some discrete openings in the open region 210 of the first substrate 201 afterwards, and the first substrate 201 of etching is carried on the back Face is to form groove.Wherein, the opening in the first substrate 201 of external zones 213 is open for first, the first base of transition region 212 Opening in bottom 201 is open for second, and the opening in the first substrate 201 of center 211 is the 3rd opening, and the first opening is located at Depth in first substrate 201 is most deep, and the first opening and the distance between trenched side-wall are nearest, the 3rd opening and trenched side-wall The distance between it is farthest.
The shape of the external zones 213 can be annular, oval ring, polygonal annular or irregular closed ring. The transition region 212 is shaped as annular, oval ring, polygonal annular or irregular closed ring；The center 211 Be shaped as annular, oval ring, polygonal annular or irregular closed ring, wherein, the quantity on the side of polygonal annular is big In equal to 3.In the present embodiment, the open region 210, external zones 213, the central axis of transition region 212 and center 211 Overlap, so that the central axis and the central axis weight of center 211 of the groove that etching the first substrate 201 back side is formed Close.
The present embodiment with the first substrate 201 be shaped as circular, external zones 213 be shaped as annular, transition region 212 It is shaped as annular, the presenting a demonstration property explanation exemplified by being shaped as annular of center 211.
With reference to figure 4 to Fig. 5, wherein, Fig. 4 is the overlooking the structure diagram of open region 210, and Fig. 5 is the structure on the basis of Fig. 3 Schematic diagram, the first graph layer 203 with some grooves 202 is formed in the front of the first substrate 201.
The top of external zones 213, the top of transition region 212 and the top of center 211 are each formed with groove 202, and institute The groove 202 for stating the groove 202 of the top of external zones 213, the groove 202 of the top of transition region 212 and the top of center 211 exists It is identical parallel to the size on the positive direction of the first substrate 201, so that the first opening being subsequently formed, the second opening and the 3rd The size being open on parallel to the positive direction of the first substrate 201 is identical.
The position of the groove 202 of the top of the external zones 213 and quantity, the top of transition region 212 groove 202 position and The position of the groove 202 of quantity and the top of center 211 and quantity can according to actual process it needs to be determined that.The groove 202 section shape can be circular, ellipse or polygon.The section shape of the present embodiment using groove 202 is as hexagon Example illustrates.
The material of first graph layer 203 is hard mask material or Other substrate materials.In the present embodiment, first figure The material of shape layer 203 is Other substrate materials, forms the processing step of first graph layer 203 and includes：In first substrate 201 front surface coated photoresist films；Technique and developing process are exposed to the photoresist film, in first substrate 201 Surface forms the first graph layer 203 with some grooves 202.
Unless otherwise instructed, the structural representation that the present embodiment subsequently provides is the structural representation on the basis of Fig. 5.
It is mask with first graph layer 203 with reference to figure 6, described in the front of the first substrate 201 rearwardly etching First substrate 201 of the segment thickness of open area 210, in the first substrate 201 of external zones 211 form some first opens in advance Mouth 221, some second openings 222, the first substrate 201 in center 213 are formed in the first substrate 201 of transition region 212 It is middle to form some 3rd openings 223.
Using the first substrate 201 of dry etch process etched portions thickness, the depth of the first pre- opening 221 of formation, The depth of second opening 222 is identical with the depth of the 3rd opening 223.Therefore, in the present embodiment, second opening 222 is the Depth in one substrate 201 is equal to the depth that the 3rd opening 223 is located in the first substrate 201.
The section shape of second opening 222 is identical with the section shape of the groove 202 of the top of transition region 212, described The section shape of 3rd opening 223 is identical with the section shape of the groove 202 of the top of center 213, the described first pre- opening 221 The top of section shape and external zones 211 groove 202 section shape it is identical.
With reference to figure 7, remove first graph layer 203 (with reference to figure 6)；It is open 222 (with reference to figures 6), the described second Three 223 (with reference to figures 6) of opening and the front of the first substrate 201 form second graph layer 204, and the second graph layer 204 exposes Go out the first pre- opening 221.
First graph layer 203 is removed using cineration technics or wet method degumming process.The material of the second graph layer 204 Expect for hard mask material or Other substrate materials, in the present embodiment, the material of the second graph layer 204 is Other substrate materials.
The second graph layer 204 is the first substrate 201 of segment thickness of the subsequent etching first in advance below opening 221 Mask, so that the first opening is formed in the first substrate 201 of external zones 211, and the first opening is located at the first substrate 201 In depth ratio the 3rd opening 223 be located at the first substrate 201 in depth it is deeper.
With reference to figure 8, with the second graph layer 204 (with reference to figure 7) for mask, etching is removed positioned at the first pre- opening 221 First substrate 201 of the segment thickness below (with reference to figure 7), in the first substrate 201 of external zones 213 forming some first opens Mouth 231.
In the present embodiment, depth of first opening 231 in the first substrate 201 is more than the 3rd opening 223 and is located at Depth in first substrate 201, and the depth that the second opening 222 is located in the first substrate 201 is located at first with the 3rd opening 223 Depth in substrate 201 is identical.First opening, 231, second opening 222 and the 3rd opening 223 are parallel to the first substrate Size on 201 positive directions is identical.
After first opening 231 is formed, the second graph layer 204 is removed.
In other embodiments, as shown in figure 9, depth of second opening 222 in the first substrate 201 can also be more than Depth of 3rd opening 223 in the first substrate 201, and depth of second opening 222 in the first substrate 201 can be big In, depth equal to or less than the first opening 231 in the first substrate 201, ensure that the second opening 222 is located at the first substrate Depth of the depth not less than the 3rd opening 223 in the first substrate 201 in 201, center is pointed in peripherally area 213 On the direction of area 211, the depth that the second different openings 222 of the top of transition region 212 are located in the first substrate 201 is identical.
Or with reference to figure 10, the depth that second opening 222 is located in the first substrate 201 is more than the 3rd opening 223 During depth in the first substrate 201, on the direction for pointing to center 213 along the external zones 211, the top of transition region 212 The depth that are located in the first substrate 201 of different second openings 222 it is more and more shallow.
Specifically, in a specific embodiment, when the depth of second opening is more than the depth of the 3rd opening, formed The processing step of first opening, the second opening and the 3rd opening includes：If being formed in first substrate front surface has First graph layer of dry groove, and the groove above external zones, the groove above transition region and the groove above center exist It is identical parallel to the size on the first substrate front surface direction；The first base using first graph layer as mask etching segment thickness Bottom, the first pre- opening is formed in the first substrate of external zones, the second pre- opening is formed in the first substrate of transition region, in The 3rd opening is formed in first substrate of heart district；Remove first graph layer；In the 3rd opening and the first substrate front surface shape Into second graph layer；Using the second graph layer as mask, etching removes the of the segment thickness positioned at the first pre- opening lower section One substrate, etching remove the first substrate of the segment thickness positioned at the second pre- opening lower section, form second opening；Remove institute State second graph layer；The 3rd graph layer is formed in the second opening, the 3rd opening and the first substrate front surface；With the 3rd figure Shape layer is mask, and etching removes the first substrate of the segment thickness positioned at the first pre- opening lower section, forms first opening.Shape Into first opening be located at the first substrate in depth it is most deep, second opening be located at the first substrate in depth take second place, the 3rd opens The depth that mouth is located in the first substrate is most shallow.
In another embodiment, the second opening is equal to the first opening in the first substrate positioned at the first intrabasement depth Depth, then in the first substrate of center formed the 3rd opening while, form first in the first substrate of external zones Pre- opening, the second pre- opening is formed in the first substrate of center；Then etching is removed positioned at the portion of the first pre- opening lower section Divide the first substrate of thickness, etching off removes the first substrate of the segment thickness below the second pre- opening in the same time, in external zones The first substrate in formed first opening, in the first substrate of transition region formed second opening.
With reference to figure 11, the described first 231 bottoms of opening and sidewall surfaces, the second 222 bottoms of opening and sidewall surfaces, with And the 3rd opening 223 bottoms and sidewall surfaces formed photosensitive layer 205.
In the present embodiment, the material of the photosensitive layer 205 is silica.The photosensitive layer 205 is also formed into the first substrate 201 fronts, and the photosensitive layer 205 is not filled by full first opening the 231, second opening 222 and the 3rd opening 223.
The photosensitive layer 205 is formed using chemical vapor deposition, ald or physical gas-phase deposition.This implementation In example, the formation process of the photosensitive layer 205 is thermal oxidation technology, and the thickness of the photosensitive layer 205 is 10 angstroms to 100 angstroms.
With reference to figure 12, there is provided the second substrate 240；The front of first substrate 201 is bonded with the second substrate 240.
Second substrate 240 is played a supporting role to the first substrate 201, can also be formed in second substrate 204 There are device, such as PMOS transistor, nmos pass transistor, CMOS transistor, resistor, inductor, capacitor or interconnection structure.
The material of second substrate 240 is silicon, germanium, SiGe, carborundum or GaAs；Second substrate 240 is also Can be silicon base, the germanium substrate on insulator or the SiGe substrate on insulator on insulator.Second substrate 240 can also be glass substrate or PCB substrate.
In the present embodiment, second substrate 240 is silicon substrate.
The bonding is carried out using vacuum bonding technique so that after the first substrate 201 is bonded with the second substrate 240, the Environment in one opening 231, in the second opening 222 and in the 3rd opening 223 are close to vacuum.
With reference to figure 13, the back side of the first substrate 201 after bonding forms patterned mask layer 206；With described graphical Mask layer 206 be mask, performed etching using dry etch process along the back side of the first substrate 201 to front, formed bottom to The recessed groove 207 of the positive direction of first substrate 201.
The patterned mask layer 206 exposes the back side of the first substrate 201 of the top of open region 210.In the present embodiment, The material of the patterned mask layer 206 is photoresist.
In the present embodiment, after the groove 207 is formed, photosensitive layer 205 positioned at the first 231 lower surfaces of opening, Second opening 222 lower surfaces photosensitive layer 205 and positioned at the 3rd opening 223 lower surfaces photosensitive layer 205 be exposed Out, and the central axis of the groove 207 overlaps with the central axis of open region 210.
Influenceed by the etching load effect problem of dry etch process so that the lower surface of the groove 207 of formation It is recessed to the positive direction of the first substrate 201 so that the most recess of the lower surface of groove 207 is located in center 213, and ditch The adjacent external zones 211 of side wall of groove 207；And the central axis due to groove 207 overlaps with the central axis of open region 210, makes The lower surface of groove 207 and its center axis intersection point be the lower surface of groove 207 most concave point, it is described during most concave point is located at The top of heart district 211.
Because in the present embodiment, the depth that the first opening 231 is located in the first substrate 201 is located at more than the 3rd opening 223 Depth in first substrate 201, i.e., the depth of the first opening 231 of the described adjacent sidewalls of groove 207 are deeper, then, even if ditch The lower surface of groove 207 is to the recessed surface of the positive direction of the first substrate 201, the photosensitive layer 205 of the first 231 lower surfaces of opening Also can be exposed.And due to and second opening 222 be located at the first substrate 201 in depth be equal to or more than the 3rd opening 223 are located at the depth in the first substrate 201, therefore the lower surface of groove 207 also can be by the sense of the second 222 lower surfaces of opening Photosphere 205 is exposed.
Due to first opening 231 lower surfaces photosensitive layer 205, second be open 222 lower surfaces photosensitive layer 205 and The photosensitive layer 205 of 3rd 223 lower surfaces of opening is exposed so that perception increase of the MEMS to light, So that the electric property of MEMS is improved.In other embodiments, the open region of the substrate can also only wrap Center and the external zones around the center are included, some first is formed in the first substrate of external zones accordingly and opens Mouthful, some three openings are formed in the first substrate of center, and the first opening is more than the positioned at the first intrabasement depth Three openings are located at the first intrabasement depth, wherein, first opening and the 3rd opening are parallel to the first substrate front surface side Upward size is identical.
After the groove 207 is formed, the patterned mask layer is removed using ashing or wet method degumming process 206。
Accordingly, the present embodiment also provides a kind of MEMS, with reference to figure 13, including：
The first substrate 201 including open region 210, first substrate 201 include positive and relative with the front The back side, wherein, the open region 210 includes center 211, around the transition region 212 of the center and around it is described gradually Become the external zones 213 in area；
Some first openings 231, the first substrate positioned at center 212 in the first substrate 201 of external zones 213 Some 3rd openings 223 in 201, some second openings 222 in the first substrate 201 of transition region 212, and first opens Depth of the mouth 231 in the first substrate 201 is more than depth of the 3rd opening 223 in the first substrate 201, and described first opens The depth of the depth of mouth 231, the depth of the second opening 222 and the 3rd opening 223 is less than the depth of the first substrate 201；
Positioned at the described first 231 bottoms of opening and sidewall surfaces, the second 222 bottoms of opening and sidewall surfaces and the 3rd The photosensitive layer 205 for 223 bottoms and the sidewall surfaces of being open；
The second substrate 240 being mutually bonded with the front of first substrate 201；
Groove 207 positioned at the back side of the open region 210 of the first substrate 201, the bottom of groove 207 is to the first substrate 201 positive directions are recessed, and the groove 207 exposes the opening of volume photosensitive layer 205, second of the lower surface of the first opening 231 The photosensitive layer 205 of 223 lower surfaces of opening of photosensitive layer 205 and the 3rd of 222 lower surfaces.
MEMS will be described in detail below.
The material of first substrate 201 is silicon, germanium, SiGe, carborundum or GaAs, and first substrate 201 is also Can be silicon substrate, the germanium substrate on insulator or the silicon-Germanium substrate on insulator on insulator.It is described in the present embodiment The material of first substrate 201 is silicon.Can also be formed with device, such as nmos pass transistor, PMOS crystal in first substrate 201 Pipe, CMOS transistor, resistor, capacitor, inductor or interconnection structure.
The shape of the external zones 213 can be annular, oval ring, polygonal annular or irregular closed ring. The transition region 212 is shaped as annular, oval ring, polygonal annular or irregular closed ring；The center 211 Be shaped as annular, oval ring, polygonal annular or irregular closed ring, wherein, the quantity on the side of polygonal annular is big In equal to 4.In the present embodiment, the open region 210, external zones 213, the central axis of transition region 212 and center 211 Overlap, so that the central axis and the central axis weight of center 211 of the groove that etching the first substrate 201 back side is formed Close.
In the present embodiment, the first opening 231, second opening 222 and the 3rd opening 223 are parallel to the first substrate Size on 201 positive directions is identical.
Depth of second opening 222 in the first substrate 201 is more than or equal to the 3rd opening 223 and is located at the first base Depth in bottom 201；Depth of second opening 222 in the first substrate 201 can be opened greater than, equal to or less than first Depth of the mouth 231 in the first substrate 201.
In the present embodiment, the second different openings 222 positioned at transition region 212 are located at the depth phase in the first substrate 201 Together.In other embodiments, pointed in peripherally area on the direction of center, the second different openings of transition region are located at the first base Depth in bottom is more and more shallow.
Second substrate 240 is played a supporting role to the first substrate 201, can also be formed in second substrate 204 There are device, such as PMOS transistor, nmos pass transistor, CMOS transistor, resistor, inductor, capacitor or interconnection structure.
The material of second substrate 240 is silicon, germanium, SiGe, carborundum or GaAs；Second substrate 240 is also Can be silicon base, the germanium substrate on insulator or the SiGe substrate on insulator on insulator.Second substrate 240 can also be glass substrate or PCB substrate.
The material of the photosensitive layer 205 is silica.In the present embodiment, the central axis of the groove 207 and center 211 central axis overlaps so that the most concave point of the lower surface of groove 207 is located in center 211.
The photosensitive layer 205 exposed is used to sense ambient, due to the first 231 bottom tables of opening in the present embodiment The photosensitive layer of 223 lower surfaces of opening of photosensitive layer 205 and the 3rd of 222 lower surfaces of opening of photosensitive layer 205, second in face 205 are exposed, thus MEMS sensing ambient ability it is stronger, therefore provide MEMS have it is superior Performance.
Figure 14 to Figure 20 is the structural representation for the MEMS forming process that another embodiment of the present invention provides.
The present embodiment is more than the 3rd opening parallel with size of first opening on parallel to the first substrate front surface direction It is described in detail exemplified by the size in the first substrate front surface.
With reference to figure 14, there is provided the first substrate 301 including open region 310, first substrate 301 include front and with institute The relative back side in front is stated, wherein, the open region 310 includes center 311, around the transition region of the center 311 312 and around the transition region 312 external zones 313.
Description about the first substrate 301 refers to previous embodiment, will not be repeated here.
Subsequently the 3rd opening, the first substrate 301 in transition region 312 are formed in the first substrate 301 of center 311 It is interior to form the second opening, the first opening is formed in the first substrate 301 in external zones 313, wherein, first opening, the The size of two openings and the 3rd opening on parallel to the positive direction of the first substrate 301 is identical, and the first opening is located at first Depth in substrate 301 is more than depth of the 3rd opening in the first substrate 301, and the second opening is in the first substrate 301 Depth be more than or equal to depth of the 3rd opening in the first substrate 301.
With reference to figure 15, the graph layer 303 with some grooves 302 is formed in the front of the first substrate 301.
In the present embodiment, the groove 302 of the top of external zones 313 is on parallel to the positive direction of the first substrate 301 Size is more than size of the groove 302 of the top of center 311 on parallel to the positive direction of the first substrate 301.It is advantageous in that：
Because the size of the groove 302 of the top of external zones 313 is more than the size of the groove 302 of the top of center 311, rear It is continuous along groove 302 etch the first substrate 301 when, the size of groove 302 is bigger, thus with the first base of the lower section of groove 302 The amount for the etching gas that bottom 301 contacts is more, therefore the etch rate of the first substrate 301 below the groove 302 is bigger, So that depth ratio threeth opening depth positioned at first substrate 301 in of the first opening formed in the first substrate 301 Spend deeper.Also, the present embodiment only needs the processing step of one of formation graph layer, you can makes the first depth being open to be formed More than the depth of the 3rd opening, process costs are saved, have reduced technology difficulty, and avoided repeatedly formation graph layer to go out Existing position deviation problem.
Size of the groove 302 on parallel to the positive direction of the first substrate 301 above transition region 312 is more than or waited Size of the groove 302 on parallel to the positive direction of the first substrate 301 above center 311, so as to ensure to be subsequently formed Second opening depth be more than or equal to the 3rd opening depth.Groove 302 above transition region 312 is parallel to Size on the positive direction of one substrate 301 can greater than, equal to or less than the top of external zones 313 groove 202 parallel to the Size on the positive direction of one substrate 301.
In the present embodiment, the different grooves 302 of the top of transition region 312 are on parallel to the positive direction of the first substrate 301 Size is identical, and the size of the groove 302 of the top of transition region 312 is more than the size of the groove 302 of the top of center 311 and is less than The size of the groove 302 of the top of external zones 213.In other embodiments, on the direction that peripherally area points to center, gradual change Size of the different grooves on parallel to the first substrate front surface direction above area is less and less.
The position of the groove 302 of the top of the external zones 313 and quantity, the top of transition region 312 groove 302 position and The position of the groove 302 of quantity and the top of center 311 and quantity can according to actual process it needs to be determined that.The groove 302 section shape can be circular, ellipse or polygon.The section shape of the present embodiment using groove 302 is as hexagon Example illustrates, and such as Figure 16, Figure 16 is the overlooking the structure diagram of open region, in figure 16 open region, external zones, transition region, Center does not indicate.
The material of the graph layer 303 is hard mask material or Other substrate materials.In the present embodiment, the material of graph layer 303 Expect for Other substrate materials.
Such as scheme to illustrate, the structural representation that the present embodiment subsequently provides is the structural representation on the basis of Figure 15 Figure.
With reference to figure 17, with the graph layer 303 (with reference to figure 15) for mask, etched along the groove 302 (with reference to figure 15) First substrate 301 of segment thickness, the first opening 321 is formed in the first substrate 301 of the external zones 313, in transition region The second opening 322 is formed in 312 the first substrate 301, the 3rd opening 323 is formed in the first substrate 301 of center 311.
First opening, 321 size on parallel to the positive direction of the first substrate 301 is more than the 3rd opening 323 flat Row is in the size on the positive direction of the first substrate 301.Second opening 322 is on parallel to the positive direction of the first substrate 301 Size be more than or equal to the 3rd opening 323 parallel to the first substrate 301 on parallel to the positive direction of the first substrate 301 Size.In the present embodiment, the second 322 size on parallel to the positive direction of the first substrate 301 of opening is more than the 3rd opening 323 Size on parallel to the positive direction of the first substrate 301, the opening 322 of difference second is parallel to the front side of the first substrate 301 Upward size is identical.In other embodiments, size of second opening on parallel to the first substrate front surface direction is big When the 3rd opening is in the size on parallel to the first substrate front surface direction, on the direction that peripherally area points to center, gradually It is less and less to become size of the second different openings in area on parallel to the first substrate front surface direction.
In a specific embodiment, first opening, 321 size on parallel to the positive direction of the first substrate 301 For 50 microns to 80 microns；It is described 3rd opening 323 size on parallel to the positive direction of the first substrate 301 be 30 microns extremely 50 microns.
First substrate 301 is etched using dry etch process.When groove 302 is parallel to the front of the first substrate 301 When size on direction is bigger, the amount for the etching gas that the first substrate 301 positioned at the lower section of groove 302 touches is more, therefore The speed that first substrate 301 of the bigger lower section of groove 302 of size is etched is faster.Due to the groove 302 of the top of external zones 313 Size be more than the top of center 311 groove 302 size, therefore the first opening 321 being correspondingly formed is located at the first substrate Depth in 301 is more than depth of the 3rd opening 323 in the first substrate 301.Second opening 322 is located at the first substrate Depth in 301 is more than or equal to depth of the 3rd opening 323 in the first substrate 301；Second opening 322 is positioned at the Depth in one substrate 301 can be located at the depth in the first substrate 301 greater than, equal to or less than the first opening 321.
In the present embodiment, depth of second opening 322 in the first substrate 301 is more than the 3rd opening 323 and is located at Depth in first substrate 301, and depth phase of the second different openings 322 of transition region 312 in the first substrate 301 Together.In other embodiments, on the direction that peripherally area points to center, the second different openings of transition region are located at first Intrabasement depth is more and more shallow.
In the present embodiment, by setting the size of the groove 302 in graph layer 303, the first opening to be formed is enabled to 321 depth in the first substrate 301 is more than depth of the 3rd opening 323 in the first substrate 301, therefore the present embodiment In only pass through the technique and one of etching technics for forming graph layer together, you can form the first opening 321, for meeting to require Two openings 322 and the 3rd opening 323, so as to simplify processing step, reduce technology difficulty, avoid and repeatedly form figure The alignment error problem that layer occurs, prevents part photosensitive layer 305 not to be exposed.
After first opening the 321, second opening 322 and the 3rd opening 323 is formed, the graph layer 303 is removed.
With reference to figure 18, the described first 321 bottoms of opening and sidewall surfaces, the second 322 bottoms of opening and sidewall surfaces, with And the 3rd opening 323 bottoms and sidewall surfaces formed photosensitive layer 305.
In the present embodiment, the material of the photosensitive layer 305 is silica.The photosensitive layer 305 is also formed into the first substrate 301 fronts, and the photosensitive layer 305 is not filled by full first opening the 321, second opening 322 and the 3rd opening 323.
The photosensitive layer 305 is formed using chemical vapor deposition, ald or physical gas-phase deposition.This implementation In example, the formation process of the photosensitive layer 305 is thermal oxidation technology, and the thickness of the photosensitive layer 305 is 10 angstroms to 100 angstroms.
With reference to figure 19, the front of the first substrate 301 is bonded with the second substrate 340；The first base after bonding The back side of bottom 301 forms patterned mask layer 306.
Description about the second substrate 340 refers to the explanation of previous embodiment, will not be repeated here.In the present embodiment, The bonding is carried out using vacuum bonding technique.
The patterned mask layer 306 exposes the back side of the first substrate 301 of the top of open region 310.In the present embodiment, The material of the patterned mask layer 206 is Other substrate materials.
With reference to figure 20, with the patterned mask layer 306 (with reference to figure 19) for mask, using dry etch process along The back side of one substrate 301 performs etching to front, forms bottom to the recessed groove 307 of the positive direction of the first substrate 301.
In the present embodiment, the central axis of the groove 307 overlaps with the central axis of center 311.Described in formation After groove 307, the photosensitive layer 305 for 322 lower surfaces that are open positioned at the photosensitive layer 305, second of the first 321 lower surfaces of opening And it is exposed positioned at the photosensitive layer 305 of the 3rd 323 lower surfaces of opening.
Influenceed by the etching load effect problem of dry etch process, the lower surface of groove 307 of formation is to first The positive direction of substrate 301 is recessed so that the most recess of the lower surface of groove 307 is located in center 311, and groove 307 The adjacent external zones 313 of side wall；The central axis of groove 307 overlaps with the central axis of center 311 so that the bottom of groove 307 The most concave point on portion surface is located in center 311.It should be noted that because groove 307 is parallel to the front of the first substrate 301 Size on direction is more than the size of the size of the first opening 321, the size of the second opening 322 and the 3rd opening 323, therefore Etching load effect has a great influence to the pattern of the lower surface of groove 307 so that the lower surface of groove 308 is to the first substrate The degree of 301 positive directions depression is larger, and etches load effect to first opening the 321, second opening 322 and the 3rd opening 323 influence can be ignored.
Because in the present embodiment, depth of first opening 321 in the first substrate 301 is more than the 3rd opening 323 and is located at Depth in first substrate 301, then even if the lower surface of groove 307 is to the recessed surface of the positive direction of the first substrate 301, Because the depth of the first opening 321 of the adjacent sidewalls of groove 307 is deeper so that the photosensitive layer 305 of the first 321 lower surfaces of opening It can be exposed.And because the depth that the second opening 322 is located in the first substrate 301 is more than or equal to the 3rd opening 223 Depth in the first substrate 301, so as to can also ensure that the photosensitive layer 305 of the lower surface of the second opening 322 is exposed Come.
Due to first opening 321 lower surfaces photosensitive layer 305, second be open 322 lower surfaces photosensitive layer 305 and The photosensitive layer 305 of 3rd 323 lower surfaces of opening is exposed so that and MEMS increases optical perception, So that the electric property of MEMS is improved.
Simultaneously as the first 321 size on parallel to the positive direction of the first substrate 301 of opening is more than the 3rd opening 323 size on parallel to the positive direction of the first substrate 301 so that the photosensitive layer that the first 321 lower surfaces of opening expose 305 area is more than the area of photosensitive layer 305 that the 3rd 322 lower surfaces of opening expose, thus with the 3rd opening and first The size identical situation being open on parallel to the first substrate front surface direction is compared, in the present embodiment, MEMS sensing light Ability be further enhanced, can significantly improve the electric property of MEMS.
Also include step：Using ashing or wet method degumming process, the patterned mask layer 306 is removed.
Accordingly, the present invention also provides a kind of MEMS, with reference to figure 20, including
The first substrate 301 including open region 310, first substrate 301 include positive and relative with the front The back side, wherein, the open region 310 includes center 311, around the transition region 312 of the center 311 and around institute State the external zones 313 of transition region 312；
Some first openings 321, the first substrate positioned at transition region 312 in the first substrate 301 of external zones 313 Some second openings 322 in 301, some 3rd openings 323 in the first substrate 301 of center 311, and first opens Depth of the mouth 321 in the first substrate 301 is more than depth of the 3rd opening 323 in the first substrate 301, and described first opens The depth of the depth of mouth 321, the depth of the second opening 322 and the 3rd opening 323 is less than the thickness of the first substrate 301；
Positioned at the described first 321 bottoms of opening and sidewall surfaces, the second 322 bottoms of opening and sidewall surfaces and the 3rd The photosensitive layer 305 for 323 bottoms and the sidewall surfaces of being open；
The second substrate 340 being mutually bonded with the front of first substrate 301；
Groove 307 positioned at the back side of the open region 310 of the first substrate 301, the groove 307 are positive to the first substrate 301 Direction is recessed, and the groove 307 exposes the 322 bottom tables of opening of photosensitive layer 305, second of the lower surface of the first opening 321 The photosensitive layer 305 of 323 lower surfaces of opening of photosensitive layer 305 and the 3rd in face.
MEMS will be described in detail below.
In the present embodiment, first opening, 321 size on parallel to the positive direction of the first substrate 301 is more than the 3rd Be open 323 size on parallel to the positive direction of the first substrate 301.
Second opening, 322 size on parallel to the positive direction of the first substrate 301 is more than the 3rd opening 323 flat For row in the size on the positive direction of the first substrate 301, depth of second opening 322 in the first substrate 301 are more than the Depth of three openings 323 in the first substrate 301.Or second opening 322 is parallel to the front of the first substrate 301 Size on direction is equal to the 3rd 323 size on parallel to the positive direction of the first substrate 301 of opening, second opening 322 depth in the first substrate 301 is equal to depth of the 3rd opening 323 in the first substrate 301.
It is described second opening 322 size on parallel to the positive direction of the first substrate 301 can greater than, equal to or be less than First 321 size on parallel to the positive direction of the first substrate 301 of opening.In the present embodiment, second opening 322 is flat Row is more than the 3rd opening 323 on parallel to the positive direction of the first substrate 301 in the size on the positive direction of the first substrate 301 Size and 321 size on parallel to the positive direction of the first substrate 301 that is open less than first, and the opening of difference second 322 Size is identical and depth is identical.
In other embodiments, on the direction that peripherally area points to center, the opening of difference second is parallel to first Size on substrate front surface direction is less and less, and accordingly, the opening of difference second is less and less positioned at the first intrabasement depth.
In the present embodiment, first opening, 321 size on parallel to the positive direction of the first substrate 301 is 50 microns To 80 microns；3rd opening, 323 size on parallel to the positive direction of the first substrate 301 is 30 microns to 50 microns.
The material of the photosensitive layer 205 is silica.In the present embodiment, the central axis of the groove 207 and center 211 central axis overlaps so that the most concave point of the lower surface of groove 207 is located in center 211.
The photosensitive layer 205 exposed is used to sense ambient, due to the first 231 bottom tables of opening in the present embodiment The photosensitive layer of 223 lower surfaces of opening of photosensitive layer 205 and the 3rd of 222 lower surfaces of opening of photosensitive layer 205, second in face 205 are exposed, thus MEMS sensing ambient ability it is stronger, therefore provide MEMS have it is superior Performance.
Simultaneously as the first 321 size on parallel to the positive direction of the first substrate 301 of opening is more than the 3rd opening 323 size on parallel to the positive direction of the first substrate 301 so that the photosensitive layer that the first 321 lower surfaces of opening expose 305 area is more than the area of photosensitive layer 305 that the 3rd 322 lower surfaces of opening expose, thus with the 3rd opening and first The size identical situation being open on parallel to the first substrate front surface direction is compared, in the present embodiment, MEMS sensing light Ability enhancing, can significantly improve the electric property of MEMS.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute The scope of restriction is defined.

Claims (20)

  1. A kind of 1. forming method of MEMS, it is characterised in that including：
    There is provided includes the first substrate of open region, and first substrate includes front and the back side relative with the front, wherein, The open region includes center and the external zones around the center；
    The first substrate of the open region is rearwardly etched along first substrate front surface, in the first substrate of the external zones Some first openings are formed, some 3rd openings are formed in the first substrate of the center, and the first opening is located at first Intrabasement depth is more than the 3rd opening and is located at the first intrabasement depth, depth, the depth of the 3rd opening of first opening Thickness of the degree less than the first substrate；
    Photosensitive layer is formed in first open bottom and sidewall surfaces and the 3rd open bottom and sidewall surfaces；
    Second substrate is provided；
    After the photosensitive layer is formed, first substrate front surface is bonded with second substrate；
    The first backside of substrate after bonding forms patterned mask layer, and the patterned mask layer exposes open region First backside of substrate；
    Using the patterned mask layer as mask, using dry etch process along the first backside of substrate to front etching described the One substrate, bottom is formed to the recessed groove in the first substrate front surface direction, and the groove exposes the first open bottom surface Photosensitive layer and the 3rd open bottom surface photosensitive layer.
  2. 2. the forming method of MEMS as claimed in claim 1, it is characterised in that first opening and the 3rd opening exist It is identical parallel to the size on the first substrate front surface direction；Or first opening is parallel to the first substrate front surface direction On size be more than the 3rd size of the opening on parallel to the first substrate front surface direction.
  3. 3. the forming method of MEMS as claimed in claim 1, it is characterised in that the open region also includes being located at center Transition region between area and external zones, wherein, the transition region is around the center, and the external zones is around the gradual change Area；Some second openings are also formed in the first substrate of transition region.
  4. 4. the forming method of MEMS as claimed in claim 3, it is characterised in that second opening is located at the first substrate In depth be equal to or more than the 3rd opening be located at the first substrate in depth.
  5. 5. the forming method of MEMS as claimed in claim 4, it is characterised in that second opening is located at the first substrate In depth be more than the 3rd opening be located at the first substrate in depth when, along the external zones point to center direction on, The depth that the second different openings of transition region are located in the first substrate is identical or less and less.
  6. 6. the forming method of MEMS as claimed in claim 5, it is characterised in that it is described first opening, second opening and Size of 3rd opening on parallel to the first substrate front surface direction is identical.
  7. 7. the forming method of MEMS as claimed in claim 4, it is characterised in that the depth of second opening is equal to the The depth of three openings, forming the processing step of first opening, the second opening and the 3rd opening includes：In first base Bottom front forms the first graph layer with some grooves, and the groove above external zones, the groove above transition region, Yi Jizhong Size of the groove on parallel to the first substrate front surface direction above heart district is identical；Using first graph layer as mask etching First substrate of segment thickness, the first pre- opening, the shape in the first substrate of transition region are formed in the first substrate of external zones Into the second opening, the 3rd opening is formed in the first substrate of center；Remove first graph layer；In the second opening, the Three openings and the first substrate front surface form second graph layer；Using the second graph layer as mask, etching, which removes, is located at first First substrate of the segment thickness of pre- opening lower section, form first opening.
  8. 8. the forming method of MEMS as claimed in claim 6, it is characterised in that the depth of second opening is more than the During the depth of three openings, forming the processing step of first opening, the second opening and the 3rd opening includes：Described first Substrate front surface formed with some grooves the first graph layer, and the groove above external zones, the groove above transition region and Size of the groove on parallel to the first substrate front surface direction above center is identical；Carved by mask of first graph layer The first substrate of segment thickness is lost, first is formed in the first substrate of external zones and is open in advance, in the first substrate of transition region Form second to be open in advance, the 3rd opening is formed in the first substrate of center；Remove first graph layer；In the 3rd opening And first substrate front surface formed second graph layer；Using the second graph layer as mask, etching is removed positioned at the first pre- opening First substrate of the segment thickness of lower section, etching remove the first substrate of the segment thickness positioned at the second pre- opening lower section, formed Second opening；
    Remove the second graph layer；The 3rd graph layer is formed in the second opening, the 3rd opening and the first substrate front surface；With institute It is mask to state the 3rd graph layer, and etching removes the first substrate of the segment thickness positioned at the first pre- opening lower section, forms described the One opening.
  9. 9. the forming method of MEMS as claimed in claim 3, it is characterised in that first opening is parallel to first Size on substrate front surface direction is more than size of the described 3rd opening on parallel to the first substrate front surface direction.
  10. 10. the forming method of MEMS as claimed in claim 9, it is characterised in that second opening is parallel to the Size on one substrate front surface direction is equal to or more than size of the 3rd opening on parallel to the first substrate front surface direction.
  11. 11. the forming method of MEMS as claimed in claim 10, it is characterised in that second opening is parallel to the The size in one substrate front surface direction is more than the 3rd opening in the size on parallel to the first substrate front surface direction, in peripherally area On the direction for pointing to center, the second different openings of transition region are equal sized on parallel to the first substrate front surface direction It is or less and less.
  12. 12. the forming method of MEMS as claimed in claim 9, it is characterised in that first opening is parallel to the Size on one substrate front surface direction is 50 microns to 80 microns；3rd opening is on parallel to the first substrate front surface direction Size be 30 microns to 50 microns.
  13. 13. the forming method of MEMS as claimed in claim 9, it is characterised in that formation first opening, second open Mouth and the processing step of the 3rd opening include：The graph layer with some grooves is formed in first substrate front surface, and outside Groove that size of the groove on parallel to the first substrate front surface direction above area be more than above center is enclosed parallel to the Size on one substrate front surface direction；Using the graph layer as mask, along the first substrate of the recess etch segment thickness, shape Into the described first opening, the second opening and the 3rd opening；Remove the graph layer.
  14. 14. the forming method of MEMS as claimed in claim 13, it is characterised in that the groove above the transition region exists Parallel to the size on the first substrate front surface direction more than or equal to the groove above center parallel to the first substrate front surface Size on direction.
  15. 15. the forming method of MEMS as claimed in claim 1, it is characterised in that the material of the photosensitive layer is oxidation Silicon.
  16. 16. the forming method of MEMS as claimed in claim 1, it is characterised in that institute is carried out using vacuum bonding technique State bonding.
  17. A kind of 17. MEMS, it is characterised in that including：
    The first substrate including open region, first substrate include front and the back side relative with the front, wherein, it is described Open region includes center and the external zones around the center；
    Some first in the first substrate of external zones are open, some three in the first substrate of center open Mouthful, and the first opening is more than the 3rd opening positioned at the first intrabasement depth and is located at intrabasement depth, first opening Depth, the depth of the 3rd opening are less than the thickness of the first substrate；
    Photosensitive layer is formed positioned at first open bottom and sidewall surfaces and the 3rd open bottom and sidewall surfaces；
    The second substrate being mutually bonded with the front of first substrate；
    Groove positioned at the back side of the first substrate open region, the channel bottom is recessed to the first substrate front surface direction, and The groove exposes the photosensitive layer on the first open bottom surface and the photosensitive layer on the 3rd open bottom surface.
  18. 18. MEMS as claimed in claim 17, it is characterised in that first opening and the 3rd opening are parallel to first Size on substrate front surface direction is identical；Or size of first opening on parallel to the first substrate front surface direction is big In size of the 3rd opening on parallel to the first substrate front surface direction.
  19. 19. MEMS as claimed in claim 17, it is characterised in that the open region also includes being located at center and periphery Transition region between area, wherein, the transition region around the center, the external zones around the transition region, it is described gradually Become formed with some second openings in first substrate in area, and the depth that second opening is located in the first substrate is equal to or greatly The depth being located in the 3rd opening in the first substrate.
  20. 20. MEMS as claimed in claim 17, it is characterised in that the material of the photosensitive layer is silica.
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