CN106477508B - Fine Machinery device - Google Patents
Fine Machinery device Download PDFInfo
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- CN106477508B CN106477508B CN201610707781.7A CN201610707781A CN106477508B CN 106477508 B CN106477508 B CN 106477508B CN 201610707781 A CN201610707781 A CN 201610707781A CN 106477508 B CN106477508 B CN 106477508B
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- electrode
- antistatic backing
- machinery device
- substrate
- movable part
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/0008—Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0022—Protection against electrostatic discharge
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
Abstract
The present invention accomplishes more easily prevent the adhesion in Fine Machinery device using under circumstances, using high-insulativity base material.The Fine Machinery device of the present invention includes the non-forming portion of electrode (107a) and the non-forming portion of electrode (107b), the non-forming portion of electrode (107a) and the non-forming portion of electrode (107b) are arranged at the surface of relative substrate in the region formed with convex portion (104) (101) and the side of movable part (103) two, it is formed without electrode, also, the Fine Machinery device of the present invention is in the non-forming portion of electrode (107a) equipped with antistatic backing (108).Antistatic backing (108) is connected with the electrode (105) formed with antistatic backing (108) that side.In addition, antistatic backing (108) is made up of sheet resistance for the material of antistatic level.
Description
Technical field
The present invention relates to a kind of Fine Machinery device for being equipped with fine movable part.
Background technology
In recent years, in switch or sensor, the Fine Machinery device of function is played using by rote
MEMS (Micro Electro Mechanical System (microelectromechanical systems)) is taken seriously.MEMS is used as pressure
Sensor or acceleration transducer and used, strength member is increasingly becoming together with LSI.MEMS has stereochemical structure, institute
State stereochemical structure possess by using the microfabrication of film formation technology, photoetching technique and various etching techniques it is fine can
Dynamic structure.
For example, in capacitance-type pressure sensor, will be due to pressure using support 503 as shown in Fig. 5 A, Fig. 5 B
And the relatively thin diaphragm 501 being subjected to displacement is supported and configured on substrate 502 in a spaced manner.In substrate 502 and diaphragm 501
Between space be present, towards space each position relative configuration electrode (not shown), formed electric capacity.The pressure of measured medium
Apply to the opposite side side of the formation electric capacity side of diaphragm 501, under pressure application, diaphragm 501 corresponds to sky
The part of gap deforms.Above-mentioned interelectrode distance corresponds to the change and changed, and interelectrode electric capacity corresponds to should
Change and change, turn into sensor output.If space is vacuum, the measurable absolute pressure of the pressure sensor.
In this Fine Machinery device, the problem of referred to as adhesive phenomenon as follows be present.Generally, when as electrostatic electricity
Capacity sensor like that across it is a certain apart from parallel 2 relative electrodes apply voltage when, square with distance can be produced
The gravitation being inversely proportional.Therefore, the diaphragm 501 after being deformed because being pressurized is close to substrate 502 to very close distance
When, due to apart from extremely short, therefore the gravitation triggered by voltage is applied in, so diaphragm 501 is strongly attracted and bottomed out (adhesive).
Herein, upon bottoming out, short circuit just occurs between electrode, therefore the gravitation triggered by voltage disappears so that diaphragm 501 is de-
From substrate 502.But, just depart from after be just applied in again by voltage trigger gravitation, therefore diaphragm 501 strongly attracted and
Bottom out again.These depart from can repeated in the case of minimum with bottoming out interelectrode.
In the case of capacitance-type pressure sensor, in order to measure electric capacity, it is necessary to apply voltage, so as to by therewith
And the influence of the gravitation come and produce adhesive phenomenon, as a result, cause sensor to be output into repeated and above-mentioned bottom out and depart from
State, and the pressure that is subject to diaphragm from measured medium of such sensor output independently becomes unstable.The adhesive
The more smooth MEMS sensor in contact site surface of the phenomenon on small-sized and interelectrode in small distance and then base material or electrode
In it is more obvious.
In addition, there is following situation in above-mentioned Fine Machinery device：Because of the above-mentioned part for the movable part such as bottoming out and substrate
Contact and cause them to engage, and movable part not as caused by elastic force bounce-back under restore (referenced patent document 1,2,
3、4、5).The phenomenon is referred to as adhesion or adhesion etc., is a problem in Fine Machinery device.
For example, for the pressure sensor of the pressure smaller than atmospheric pressure is measured just as above-mentioned diaphragm gauge, due to
When transporting, installing or the when of maintenance, can expose in an atmosphere, therefore can frequently be applied in excessive pressure more than measurement range
The situation of power.When being so applied in excessive pressure, the diaphragm 501 of compression can exceed actual use scope as shown in Fig. 5 C
And largely bend, cause a part for diaphragm 501 to touch substrate 502 (bottoming out).
Because the thickness of diaphragm 501 and the size of deformed region also have the difference of the design parameters such as the material of diaphragm 501, on
State that the state bottomed out is different, but especially in the case where the crushed element of diaphragm is relatively thin, bottom out the generation that can cause adhesion.
Especially in the case where being set to be formed without the composition of electrode in contact site to suppress previously described adhesive phenomenon,
Can substantially it stick together.Think the reason is that be formed without in the region of electrode in order to prevent adhesive phenomenon, bottoming out
When, the material for forming diaphragm 501 and substrate 502 is in direct contact with one another.
In the case of pressure sensor, when sticking together, even if removing pressure, diaphragm will not also restore and provide still
Output as being applied with pressure, so as to cause the mistake of measure.It is being especially 0.1~number nm by surface roughness (Rz)
The Fine Machinery device that makes of extremely flat base material in, be a big problem.
In order to prevent above-mentioned adhesion, industry has to be formed the fine structures such as projection and reduces contact surface at least one side bottomed out
Accumulate to suppress contact force.Specifically, using the manufacturing technology of well known semiconductor device, the silicon of Fine Machinery device is being formed
Deng forming small projection on the base materials such as semiconductor or quartz.For example, by using known photoetching technique and etching technique
Patterning, form the jut of several μm of sizes.In addition, as other technologies, also being formed carrys out the surface coating of surface-stable
The method of gravitation caused by reduction, make by sandblasting etc. surface become coarse to form the method for projection.
【Prior art literature】
【Patent document】
【Patent document 1】The flat 10-512675 publications of Japanese Patent Laid
【Patent document 2】Japanese Patent Laid-Open 11-340477 publications
【Patent document 3】Japanese Patent Laid-Open 2000-040830 publications
【Patent document 4】Japanese Patent Laid-Open 2000-196106 publications
【Patent document 5】Japanese Patent Laid-Open 2002-299640 publications
The content of the invention
【Problems to be solved by the invention】
The adhesion countermeasure of contact area is reduced above by projection to a certain extent more effectively, still, especially
In the case of pressure sensor, due to larger stress, therefore less projection meeting can be applied when being applied in excessive pressure
Destroy diaphragm or substrate.On the other hand, if increasing projection to prevent from destroying, contact area can be increased and cannot get countermeasure
Effect in itself.In this way, the size of the contact surface using the part of the necessary strict control projection of adhesion Prevent countermeasures of projection, control
Make complex.
In addition, compared with situations such as silicon or glass, for make device reply use environment and with corrosion resistance, resistance to pressure,
The material that the crystalline materials such as the sapphire of heat resistance or aluminium oxide ceramics etc. have high-insulativity is easier to stick together.Especially
When being changed into the relatively thin structure of diaphragm, the not effective countermeasure of thrust of several μm or so of size.
Therefore, it is necessary to the minute asperities of less than sub- μm of size are formed, but the material such as sapphire or aluminium oxide ceramics is having
Have the another aspect of high mechanical properties, high corrosion-resistant, chemical proofing, it is more difficult than materials such as silicon or glass to process, and sub- μm with
Under size microfabrication it is extremely difficult.
Although in addition, also have using the surface coating of surface-stable is made to prevent the technology of adhesion, in this case, table
Face overlay film uses organic material mostly, in high temperature environments in the case of use, or by the space between diaphragm and substrate
It is set in the composition of vacuum, organic material can not use.
As described above, there are the following problems in the past：Prevent it is using under circumstances, use the high-insulativities such as sapphire
Adhesion this content in the Fine Machinery device of base material can not be realized easily.
The present invention is formed to eliminate as above problem, and its object is to accomplish more easily to prevent under circumstances
Adhesion in Fine Machinery device using, using high-insulativity base material.
【The technological means solved the problems, such as】
The Fine Machinery device of the present invention includes：Substrate, it is made up of insulator；Movable part, it is supported by support
On substrate, configuration is separated with substrate in movable area, and can be described movable in movable area towards orientation substrate displacement
Portion is made up of insulator；Convex portion, it is formed at the surface of the wherein side in substrate and movable part relative in movable area；
Electrode, it is formed at relative substrate in movable area and the respective surface of movable part；The non-forming portion of electrode, it is arranged at
The surface of at least one party in region formed with convex portion in relative substrate and movable part, is formed without electrode；It is and anti-quiet
Electric layer, at least one in its non-forming portion of electrode being formed on the surface at least one party being arranged in substrate and movable part
Side, is connected with the electrode formed with that side of antistatic backing, material structure of the antistatic backing by sheet resistance for antistatic level
Into.
In above-mentioned Fine Machinery device, the sheet resistance of antistatic backing is set to 109~1014Ω/.
In above-mentioned Fine Machinery device, the sheet resistance of antistatic backing is preferably set as following state：Antistatic backing is relative
When obtained by the electric capacity formed between the electrode that the resistance that the electrode connected is formed is multiplied by antistatic backing and is connected
Between constant be following scope, i.e. than action when apply to the relative respective surface of substrate and movable part in movable area
On vibration period of the alternating voltages of 2 electrodes for being formed it is big.
In above-mentioned Fine Machinery device, antistatic backing is made up of semiconductor.In addition, antistatic backing also can be by aoxidizing
At least one kind of composition in titanium, indium oxide, zinc oxide, tin oxide, ruthenium-oxide, zirconium oxide.In addition, antistatic backing also can by AlN,
Any of TiN, TiC, SiN are formed.In addition, antistatic backing also can import metal in the region of configuration antistatic backing carrys out shape
Into.In this case, metal is at least one kind of in titanium, niobium, tantalum, nickel, iron, chromium, manganese.In addition, antistatic backing also can be by original
The metal oxide layer of the other thickness of child level is formed.Metal oxide layer is by least one kind of structure in the oxide of molybdenum, the oxide of tungsten
Into.
In above-mentioned Fine Machinery device, insulator is any of sapphire, aluminium oxide ceramics.
【The effect of invention】
By content discussed above, according to the present invention, following excellent effect is obtained：Can more easily it prevent various
Adhesion in Fine Machinery device being used under environment, using high-insulativity base material.
Brief description of the drawings
Figure 1A is the sectional view for the configuration example for representing the Fine Machinery device in embodiments of the present invention.
Figure 1B is the sectional view for the local configuration example for representing the Fine Machinery device in embodiments of the present invention.
Fig. 2 is the sectional view for the local configuration example for representing another Fine Machinery device in embodiments of the present invention.
Fig. 3 is the sectional view for the local configuration example for representing another Fine Machinery device in embodiments of the present invention.
Fig. 4 is to illustrate the explanation figure of the operating state of the Fine Machinery device in embodiments of the present invention.
Fig. 5 A are the cross-sectional perspective view locally formed for representing pressure sensor.
Fig. 5 B are the cross-sectional perspective view locally formed for representing pressure sensor.
Fig. 5 C are the cross-sectional perspective view locally formed for representing pressure sensor.
Embodiment
Below, with reference to figure 1A, Figure 1B, embodiments of the present invention are illustrated.Figure 1A is the implementation for representing the present invention
The sectional view of the configuration example of Fine Machinery device in mode.In addition, Figure 1B is to represent fine in embodiments of the present invention
The sectional view of the local configuration example of mechanical device.Figure 1B is to be amplified expression to a Figure 1A part.
The Fine Machinery device includes：Substrate 101, it is made up of insulator；And movable part 103, it passes through support
102 supportings on the substrate 101, configuration are separated in movable area 121 with substrate 101, and can be in the Nei Chaoji of movable area 121
The direction displacement of plate 101, the movable part 103 are made up of insulator.Movable part 103 by the fixed part around movable area 121 and
It is fixed on support 102.For example, support 102 is integrally formed on substrate 101.Furthermore also can movable part 103 that
Side is formed with support 102 with movable part 103.
In addition, the Fine Machinery device includes convex portion 104, the convex portion 104 is formed at relative in movable area 121
The side side 101a of substrate 101 of substrate 101 and movable part 103.Convex portion 104 is, for example, to be set to overlook circular pillar, diameter
It is set to 1~tens of μm.In addition, the example includes multiple convex portions 104, the interval of adjacent projection 104 is for example set to 0.5mm or so.
Furthermore also can be in the side side of movable part 103 of substrate 101 and movable part 103 relative in movable area 121
103a is formed with convex portion.In addition, in relative 103 respective surface of substrate 101 and movable part in movable area 121 formed with
Electrode 105, electrode 106.
The Fine Machinery device is, for example, the pressure sensor that movable part 103 is diaphragm.For example, substrate 101 and movable part
103 are made up of sapphire.The movable part 103 of compression is towards the direction displacement of substrate 101, thus, the electrode 105 in movable area 121
Change with the interval occurred of electrode 106, so that electric capacity changes.The institute of movable part 103 is determined by the capacitance variations
The pressure being subject to.If electrode forming region is set into vacuum, it can be used as determining the pressure sensor of absolute pressure.
In addition, the Fine Machinery is installed on substrate 101 and movable part 103 relative in the region formed with convex portion 104
The surface of two sides is equipped with the non-forming portion 107a of electrode and the non-forming portion 107b of electrode for being formed without electrode.The non-forming portion of electrode
It is circle of the same area, the non-forming portion 107a of electrode and electrode that the 107a and non-forming portion 107b of electrode, which is for example set to when overlooking,
Non- forming portion 107b is set to same position in center when overlooking.
In addition, the Fine Machinery device substrate 101 the non-forming portion 107a of electrode equipped with antistatic backing 108.It is anti-quiet
Electric layer 108 is connected with the electrode 105 formed with that side of antistatic backing 108.In addition, antistatic backing 108 is anti-by sheet resistance
The material of static level is formed.For example, the sheet resistance of antistatic backing 108 is set to 109~1014Ω/.As this material
Material, there is the semiconductors such as silicon or carborundum.In addition, antistatic backing 108 also can be by titanium oxide, indium oxide, zinc oxide, tin oxide, oxygen
Change the metal oxides such as ruthenium, zirconium oxide to form.
In addition, antistatic backing 108 can be also made up of the carbide such as AlN, TiN, TiC, SiN, nitride.In addition, antistatic
Layer 108 also can import metal to be formed in the region of configuration antistatic backing 108.By importing metal area is added to form metal
Domain, antistatic level can be made.As this metal, there are titanium, niobium, tantalum, nickel, iron, chromium, manganese etc..For example, by deposited metal and add
Heat makes metal thermal diffusion, and afterwards, remaining metal etch is removed.In addition, also by ion implanting by these from
The method that son is directed into substrate.
Antistatic backing 108 can be also made up of the metal oxide layer of the other thickness of atomic level.For example, aoxidized using by molybdenum
Thing, the metal oxide layer of the other thickness of atomic level of composition such as oxide of tungsten form antistatic backing 108.Molybdenum oxide
Or tungsten oxide vapour pressure compared with sapphire etc. is relatively low.As long as by together with the substrate 101 that forms the material with by sapphire
900 DEG C or so are heated in same stove to make above-mentioned oxidized metal evaporation (distillation), just can form original on the surface of substrate 101
The above-mentioned metal oxide layer of the other thickness of child level.
According to above-mentioned embodiment, when the movable part 103 of compression exceedes actual use scope and when largely bending,
A part of face 103a of movable part 103 is bottomed out in the upper surface of the convex portion 104 of substrate 101.In this condition, due to touching
Position formed with antistatic backing 108 without powered, therefore will not stick together.In addition, in the portion touched because bottoming out
Position, electrode 105 will not be connected with electrode 106, therefore the phenomenon bottomed out with departing from will not also be repeated certainly.
Herein, the details for reaching the present invention are illustrated.First, as it was noted above, in relative in movable area 121
The face 101a of substrate 101 and the face 103a of movable part 103, if formed with electrode in respective whole region, touching
During bottom, these electrodes can be in contact and turn into problem.In order to eliminate the problem, it is set to not configure the shape of electrode in contact site
State.However, at the position for being formed without electrode, the face 101a of substrate 101 can be contacted directly with the face 103a of movable part 103.
In this way, when repeated the larger contact with movable part 103 of substrate 101 of insulaion resistance, it may occur that contact band
Electricity and cause surface produce electrostatic.The insulaion resistance of substrate 101 and movable part 103 is larger, and contact environment is also in vacuum,
Cause place of these electrostatic without dissipation, therefore whenever contacting repeatedly, electrostatic can be accumulated by.This is vacuum in contact environment
Absolute manometer in occur more frequently.As a result, it is believed that produce electrostatic attraction between substrate 101 and movable part 103 and send out
Raw adhesion.
In order to suppress the powered generation of this contact, it is more effective countermeasure in itself to reduce contact area.Therefore, formed
Convex portion 104, contact area when being bottomed out so as to reduce.However, in sapphire insulation material, it is known that can be easily
Be formed as the convex portion 104 of several μm or so of pattern, but the microfabrication of nm ranks is extremely difficult.Thus, can easily it realize
The size of convex portion 104 is several μm of units.
But, the convex portion 104 of several μm or so of size not effective countermeasure for the above-mentioned adhesion as caused by electrostatic.
On the other hand, the position being in contact when bottoming out sets the antistatic backing 108 being made up of the less material of resistance value.By
What is contacted when bottoming out is antistatic backing 108, therefore electric charge is neutralized on antistatic backing 108 so that electrostatic attraction is not yet
Work, so as to prevent adhesion.
In addition, though the material such as metal is also the less material of resistance value, but in this case, with the shape formed with electrode
State is identical, that the connection between electrode 105 and electrode 106 occurs be present, can turn into problem.In contrast, in above-mentioned reality
Apply in mode, be to form antistatic backing 108 using sheet resistance for the material of antistatic level, and be connected to electrode 105 and
Form.In addition, by by antistatic backing 108 be arranged on as be in contact when bottoming out it is region, be configured with convex portion 104
In region, the state that antistatic backing 108 is contacted when bottoming out is realized.
For example, it is set to apply to exchanging between electrode 105 and electrode 106 compared to when making Fine Machinery device action
The time constant of antistatic backing 108 is sufficiently large for the cycle of voltage.By forming in such a manner, antistatic backing 108
The electrode 105 that the electric charge on surface can be connected by antistatic backing 108 dissipates to outside, therefore can prevent adhesion.
In addition, also antistatic backing 108a can be set in the electrode non-forming portion 107a of substrate 101 as shown in FIG. 2, and
In the electrode of movable part 103 non-forming portion 107b, antistatic backing 108b is set.Antistatic backing 108b is connected configuration with electrode 106.
In this case, when bottoming out, antistatic backing 108a is in contact with antistatic backing 108b.
In addition, also the non-forming portion of electrode can be not provided with that side of movable part 103 as shown in FIG. 3 and face 103a's
Formed with electrode 106 in towards the region in the region of convex portion 104.In this case, when bottoming out, electrode 106 and antistatic backing 108
It is in contact.
As it was noted above, the sheet resistance of antistatic backing 108 is preferably set to following state：Antistatic backing 108 is relative to connecting
It is normal that the electrode 105 that connects and the resistance R that is formed are multiplied by the time obtained by the electric capacity C formed between antistatic backing 108 and electrode 105
Number RC is following scope, i.e. than applying in action between electrode 105 and electrode 106 relative in movable area 121
The vibration period T of alternating voltage is big (RC ＞ ＞ T).
Using Fig. 4, more specific description is carried out to the time constant of above-mentioned antistatic backing 108.Fig. 4 is that expression is set to use
The movable part 103 of the Fine Machinery device of Fig. 3 composition sectional view of the bottom in a part for the state of substrate 101.Herein, it is micro-
Thin mechanical device is the pressure sensor that movable part 103 is diaphragm, and measurement voltage during action is exchange.
As shown in figure 4, the current potential that the current potential for the electrode 106 for bottoming out moment is set to 0, electrode 105 is set to V0sin(2π
ft).It is also 0 certainly to touch the current potential of the antistatic backing 108 on the convex portion 104 of electrode 106, still, if with identical faces
Electrode 105 between resistance it is too small, then antistatic backing 108 can also rapidly become V0Sin (2 π ft), causes the electricity with current potential 0
Potential difference is produced between pole 106, therefore the electrostatic attraction as caused by voltage can be produced, so as to cause previously described measurement voltage
In abnormal generation.
If in contrast, by the resistance of antistatic backing 108 and electrode 105 be set to R, by antistatic backing 108 and electrode 105 it
Between electric capacity be set to C, then antistatic backing 108 and be applied with the electrode 105 of exchange and can be only deemed as No. 1 wave filter (RC electricity
Road).Thus, if relative to the cut-off frequency 1/ of application to defined RC circuits for the vibration frequency f of the exchange of electrode 105
(2 π RC) is sufficiently small, then the current potential on the surface of antistatic backing 108 will not follow the electrode 105 on periphery and remain 0 so that with electrode
Potential difference will not be produced between 106.As a result, electrostatic attraction will not be produced, so as to prevent in previously described measurement voltage
It is abnormal.
On the other hand, due to because of contact and caused by powered caused by electrostatic be diffused as direct current, therefore, if by initial stage
Institute is electrically charged to be set to Q0, then the electric charge can be with Q0Exp (- t/RC) mode decays.If time constant RC passes with above-mentioned pressure
The response speed of sensor will not then cause powered adhesion compared to sufficiently small, and generally, if antistatic backing 108
Sheet resistance is 109~1014Ω/, then be not easy powered, and electrostatic will be removed rapidly.In this way, in order to avoid by adhesion and measurement
It is abnormal caused by voltage, with regard on antistatic backing 108 with for the resistance of the electrode 105 in its identical faces, for cut-off frequency
And limit lower limit, limit the upper limit for antistatic.
The order of the effect above uses figure for the composition ＞ illustrated using the composition ＞ that Fig. 3 illustrated using Fig. 2
1A, Figure 1B and the composition illustrated.When bottoming out in the composition illustrated using Fig. 3 of antistatic backing and contact electrode,
Due to being easiest to dissipate by contacting powered caused electric charge, therefore the effect highest as caused by antistatic backing obtained.Relatively
It is unilateral in the composition illustrated using Figure 1A, Figure 1B of insulator when bottoming out in this, the effect as caused by antistatic backing
It is relatively low.
Furthermore the non-forming portion of electrode may be disposed at relative substrate in the region formed with convex portion and the side's of movable part two
Surface, it may also be arranged on either one.In the case where the non-forming portion of electrode is arranged on two sides, antistatic backing can be formed at substrate and
The non-forming portion each side of electrode set by the surface of the side of movable part two, may also be arranged on either one.In addition, in the non-forming portion of electrode
In the case of being arranged at either one in substrate and movable part relative in the region formed with convex portion, antistatic backing is formed at
The non-forming portion of electrode of either one.
As mentioned above, according to the present invention, due to it is being in contact in substrate with the movable part after displacement, formed with convex portion
Position be provided with antistatic backing, therefore can more easily prevent it is using under circumstances, use high-insulativity base material
Adhesion in Fine Machinery device.
Furthermore the present invention is not limited to the implementation described above, it is clear that can be usual by having in the field
The personnel of knowledge implement a large amount of deformations and combination in the technological thought of the present invention.
Symbol description
101 ... substrates, 101a ... faces, 102 ... supports, 103 ... movable parts, 103a ... faces, 104 ... convex portions, 105 ... electricity
Pole, 106 ... electrodes, the non-forming portion of 107a, 107b ... electrode, 108 ... antistatic backings, 121 ... movable areas.
Claims (12)
- A kind of 1. Fine Machinery device, it is characterised in that including：Substrate, it is made up of insulator；Movable part, it is supported on the substrate by support, and configuration is separated with the substrate in movable area, and can It is made up of in the movable area towards the orientation substrate displacement, the movable part insulator；Convex portion, it is formed at the relative substrate and the table of the wherein side in the movable part in the movable area Face；Electrode, it is formed at the relative substrate in the movable area and the respective surface of the movable part；The non-forming portion of electrode, it is arranged in the region formed with the convex portion in the relative substrate and the movable part At least one party surface, be formed without the electrode；AndAntistatic backing, it is formed at the electrode being arranged on the surface of the substrate and at least one party in the movable part At least one party in non-forming portion, it is connected with the electrode formed with that side of antistatic backing,The antistatic backing is made up of sheet resistance for the material of antistatic level.
- 2. Fine Machinery device according to claim 1, it is characterised in thatThe sheet resistance of the antistatic backing is set to 109~1014Ω/□。
- 3. Fine Machinery device according to claim 1, it is characterised in thatThe sheet resistance of the antistatic backing is set as following state：The antistatic backing is formed relative to the electrode connected The resistance electric capacity that is multiplied by antistatic backing and is formed between the electrode that is connected obtained by time constant be, than acting When apply to described in 2 formed on the relative substrate in the movable area and the respective surface of the movable part Vibration period of the alternating voltage of electrode big scope.
- 4. Fine Machinery device according to claim 2, it is characterised in thatThe sheet resistance of the antistatic backing is set as following state：The antistatic backing is formed relative to the electrode connected The resistance electric capacity that is multiplied by antistatic backing and is formed between the electrode that is connected obtained by time constant be, than acting When apply to described in 2 formed on the relative substrate in the movable area and the respective surface of the movable part Vibration period of the alternating voltage of electrode big scope.
- 5. according to Fine Machinery device according to any one of claims 1 to 4, it is characterised in thatThe antistatic backing is made up of semiconductor.
- 6. according to Fine Machinery device according to any one of claims 1 to 4, it is characterised in thatThe antistatic backing is made up of at least one kind of in titanium oxide, indium oxide, zinc oxide, tin oxide, ruthenium-oxide, zirconium oxide.
- 7. according to Fine Machinery device according to any one of claims 1 to 4, it is characterised in thatThe antistatic backing is made up of any of AlN, TiN, TiC, SiN.
- 8. according to Fine Machinery device according to any one of claims 1 to 4, it is characterised in thatThe antistatic backing is to import metal in the region for configuring the antistatic backing and formed.
- 9. Fine Machinery device according to claim 8, it is characterised in thatThe metal is at least one kind of in titanium, niobium, tantalum, nickel, iron, chromium, manganese.
- 10. according to Fine Machinery device according to any one of claims 1 to 4, it is characterised in thatThe antistatic backing is made up of the metal oxide layer of the other thickness of atomic level.
- 11. Fine Machinery device according to claim 10, it is characterised in thatThe metal oxide layer is made up of at least one kind of in the oxide of molybdenum, the oxide of tungsten.
- 12. Fine Machinery device according to claim 1, it is characterised in thatThe insulator is any of sapphire, aluminium oxide ceramics.
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| JP2015171858A JP6581849B2 (en) | 2015-09-01 | 2015-09-01 | Micro mechanical equipment |
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| CN106477508B true CN106477508B (en) | 2018-03-16 |
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| JP (1) | JP6581849B2 (en) |
| KR (1) | KR101876046B1 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP6581849B2 (en) | 2019-09-25 |
| TWI617505B (en) | 2018-03-11 |
| CN106477508A (en) | 2017-03-08 |
| TW201718389A (en) | 2017-06-01 |
| KR20170027279A (en) | 2017-03-09 |
| JP2017047496A (en) | 2017-03-09 |
| KR101876046B1 (en) | 2018-07-06 |
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