CN106471821B - 用于保护微-电子-机械系统的设备和方法 - Google Patents

用于保护微-电子-机械系统的设备和方法 Download PDF

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CN106471821B
CN106471821B CN201580036170.8A CN201580036170A CN106471821B CN 106471821 B CN106471821 B CN 106471821B CN 201580036170 A CN201580036170 A CN 201580036170A CN 106471821 B CN106471821 B CN 106471821B
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A·J·霍利达
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/08—Mouthpieces; Microphones; Attachments therefor
    • H04R1/083—Special constructions of mouthpieces
    • H04R1/086—Protective screens, e.g. all weather or wind screens
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/023—Screens for loudspeakers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

一种用于微‑电子‑机械系统的保护盖，所述系统具有低质量/面积比，优选<3gsm，更优选<1gsm。

Description

用于保护微-电子-机械系统的设备和方法
发明背景
通过微制造技术将机械元件、传感器，致动器等与电子器件集成在常见的硅基板上称为微-电子-机械系统(“MEMS”)。MEMS传感器可以用于麦克风、用户压力传感器、轮胎压力监测系统、气体流量传感器、加速度计和陀螺仪。
已知的硅电容式麦克风MEMS组件包括声学换能器和声学端口。声学端口还包括环境屏障，如聚四氟乙烯(PTFE)或烧结金属，以保护换能器免受环境因素，例如阳光，湿气，油，污垢和/或灰尘的影响。声学换能器包括扬声器和麦克风。
膨胀型聚四氟乙烯(ePTFE)膜已用于保护声学换能器多年。最近，出现了用于保护超声换能器的若干应用。两个示例是：(1)用于手势识别的短超声脉冲的发射器，也可能是接收器(或者，可以使用标准声学麦克风来接收信号)和/或接近感测。这些脉冲的飞行时间用于确定手/手指的3D位置和/或到对象的距离；(2)MEMS数字扬声器。后者是用产生超声波脉冲的超声波发射器阵列产生的，其以数字方式再现可听信号。
对于任何保护盖，声学(可听)和超声波应用之间的预期频率传输的差异需要不同的膜特性。当传输频率接近或低于反应性保护盖的共振频率时，ePTFE膜的刚度/顺度即为与声学传输相关的材料性质。典型的非－膨胀型聚四氟乙烯(non-ePTFE)的替代物包括用于这些应用的硅氧烷和氨基甲酸酯膜。高于反应性保护盖的共振频率时，申请人已经发现，膜的质量/面积是驱动传输的关键属性。因此，需要低质量的膨胀型四氟乙烯。
还存在对MEMS组件所需求的薄形状因数的环境保护和压力均衡能力的需求。
发明概述
根据本公开,通过在超声换能器附近设置质量/面积比为约3g/m2或更小的膨胀型PTFE膜，来提供保护具有超声换能器的微-电子-机械系统的方法。在优选的实施方式中，质量/面积比为约1g/m2或更小，膨胀型PTFE膜捕获直径大于约0.25微米的颗粒，膨胀型PTFE膜在约50KHz到约92.5KHz的频率下提供的传输损失小于约3分贝，膨胀型PTFE膜还能提供声波传输，颗粒捕获和压力排放。
另一方面，本公开提供了一种微-电子-机械系统，其包括超声换能器和设置在超声换能器附近的质量/面积比约为3g/m2或更小的膨胀型PTFE保护盖。
另一方面，通过设置邻近超声换能器的多孔聚合物材料提供保护具有超声换能器的微-电子-机械系统的方法，所述多孔聚合物材料满足以下关系：
Figure BDA0001199716460000021
Z空气＝空气的比声阻抗(瑞利)＝413；
Figure BDA0001199716460000024
f＝频率(赫兹),
f>20KHz。
在替代实施方式中，等式为：
Figure BDA0001199716460000022
在其它替代实施方式中:
Figure BDA0001199716460000023
附图简要说明
图1是用于测试本发明实施方式的测试方法的示意图。
图2是本发明的其它示例实施方式的质量/面积相对于声学性能(放大率)的图。
图3是本发明示例实施方式的扫描电子显微照片。
发明详述
在一个实施方式中,本公开提供了一种用于微-电子-机械系统的保护盖，其具有低质量/面积，优选<3gsm，最优选<1gsm。在另一个实施方式中,本公开提供了一种保护具有超声换能器的微-电子-机械系统的方法，所述方法包括邻近所述超声换能器设置质量/面积比为约3g/m2或更小的膨胀型PTFE膜的步骤。在另一个实施方式中，本公开提供一种微-电子-机械系统，所述系统包括超声换能器和邻近所述超声换能器设置的质量/面积比约为3g/m2或更小的膨胀型PTFE保护盖。
本公开涉及保护盖用于微-电子-机械系统的用途，其质量/面积小于3g/m2，最优选小于1g/sm。这种保护盖令人惊讶地起到了保持大于约0.25微米的颗粒物质在被保护装置以外的作用，并且允许在约50-92.5KHz的频率范围内具有损失小于约3分贝的声波传输。保护盖必须足够耐用以经受住包装过程、表面贴装技术应用以及通过其预期的用途。
保护盖优选ePTFE的多孔膜，尽管在替代方案中使用非多孔膜。根据美国专利3,953,566和7,306,729的教导，制备了优选实施方式中的合适的多孔膜，以具有以下性质：质量/面积约小于3g/sm，最优选小于1g/sm；机器方向基体拉伸强度大于约25kpsi；横向基体拉伸强度大于约30kpsi；泡点大于约30；对0.25微米颗粒的过滤效率为至少约99.9％；格力值约1到2。
膜的质量/面积是通过使用标尺测量样品明确限定面积的质量来计算的。使用模具或任何精确切割仪器将样品切割至限定面积。格利(Gurley)空气流量测试测量在12.4厘米水压下100厘米3空气流通过6.45cm2样品的时间(以秒计)。样品在格力密度计型号4340自动密度计(Gurley Densometer Model 4340Automatic Densometer)中测量。
如上所述构建多孔膜的样品。所述多孔膜具有1.2g/m2的质量/面积，1.1秒的格力值，以及在50-92.5KHz的频率下1.8分贝的声损耗。这个测试方法结合图1在下面描述。
参考图1，天朗超高音声波扬声器(Tannoy Super Tweeter ultrasonic speaker)10垂直安装在隔音室内。具有1.5英寸直径的PVC管11密封到扬声器10的前部。PVC管11的另一端连结到木制挡板12上，所述挡板匹配有1.5英寸直径的孔13。B&K4939麦克风14安装在距离木制挡板12的表面大约2英寸处。扬声器10通过B&K2716C放大器放大,麦克风由B&KNEXUS调节放大器供电。在校准并安装麦克风14之后，扬声器10在第12倍频步长处产生从92.5kHz全音程(tone)到20kHz全音程的阶跃扫描。扫描在900mV的恒定励磁电压下进行。麦克风14记录每个步骤的声压水平,创建记录为“打开条件”的曲线。使用内径为1英寸和3/4英寸的双面压敏粘合剂环将膜15安装到木制挡板12上。然后重复该频率扫描，每个频率的声压也将再次被记录下来。从打开条件中减去该曲线以创建衰减曲线。对50kHz-92.5kHz的衰减取平均以概括超声衰减。
选择以60KHz为中心的第三倍频带，对于宽范围的ePTFE膜在该倍频带内的平均放大率参见表1。
表1
质量(g/m<sup>2</sup>) 放大(分贝)
0.14 -1.21875
0.3 -0.01875
1 -2.3
1.5 -2.49375
1.6 -3.31
2.7 -4.97125
3.1 -7.1125
3.5 -7.13
3.7 -7.9875
4.1 -7.19
6 -12.60375
根据本公开，通过在超声换能器附近设置多孔聚合材料提供了一种保护具有超声换能器的微-电子-机械系统的方法，所述多孔聚合材料满足以下关系：
Figure BDA0001199716460000041
Z空气＝空气的比声阻抗(瑞利)＝413；
Figure BDA0001199716460000053
f＝频率(Hz)
f>20KHz
在替代实施方式中，等式为：
Figure BDA0001199716460000051
在其它的替代方式中:
Figure BDA0001199716460000052
第一个方程式包括声损耗b/w 0-12分贝，第二方程式:0–6分贝,第三个方程式0–3分贝。
图2是本发明额外的示例性实施方式的质量/面积比与声学性能(放大或声损失)的关系图。
图3是显示本公开示例性实施方式的显微结构的扫描电子显微照片。

Claims (6)

1.一种保护具有超声换能器的微-电子-机械系统的方法,所述方法包括邻近所述超声换能器设置质量/面积比大于或等于0.3g/m2且小于1g/m2的膨胀型聚四氟乙烯膜的步骤，所述膨胀型聚四氟乙烯膜在50KHz至92.5KHz的频率下提供小于3分贝的传输损耗。
2.如权利要求1所述的方法，其特征在于，所述膨胀型聚四氟乙烯膜捕获直径大于0.25微米的微粒。
3.如权利要求1所述的方法，其特征在于，所述膨胀型聚四氟乙烯膜提供声波传输、颗粒捕获和压力排放。
4.一种微-电子-机械系统，所述微-电子-机械系统包括超声换能器和邻近所述超声换能器设置的质量/面积比大于或等于0.3g/m2且小于1g/m2的膨胀型聚四氟乙烯保护盖，所述膨胀型聚四氟乙烯保护盖在50KHz至92.5KHz的频率下提供小于3分贝的传输损耗。
5.如权利要求4所述的系统，其特征在于，所述膨胀型聚四氟乙烯保护盖捕获直径大于0.25微米的颗粒。
6.如权利要求4所述的系统，其特征在于，所述膨胀型聚四氟乙烯保护盖提供声波传输、颗粒捕获和压力排放。
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US20160376144A1 (en) 2016-12-29
EP3167623B1 (en) 2023-08-30
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CN106471821A (zh) 2017-03-01
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