CN106468755A - Stacking MIM capacitor detection structure and its detection method - Google Patents
Stacking MIM capacitor detection structure and its detection method Download PDFInfo
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- CN106468755A CN106468755A CN201510492691.6A CN201510492691A CN106468755A CN 106468755 A CN106468755 A CN 106468755A CN 201510492691 A CN201510492691 A CN 201510492691A CN 106468755 A CN106468755 A CN 106468755A
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Abstract
The present invention provides a kind of stacking MIM capacitor detection structure, and described stacking MIM capacitor detection structure includes first electrode and second electrode, and described stacking MIM capacitor detection structure includes：First MIM capacitor unit, the second MIM capacitor unit and diode；In both described first MIM capacitor unit and described 2nd MIM unit, to form cascaded structure, another one and described tandem construction parallel are to form parallel-connection structure for any one and described Diode series；Described parallel-connection structure is connected between described first electrode and described second electrode.By described diode of connecting on described first MIM capacitor unit or described second MIM capacitor unit, can quickly and easily detect the MIM capacitor unit of inefficacy, greatly save detection time, and then improve detection efficiency.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of stacking MIM capacitor detection structure and its detection method.
Background technology
MIM (metal-insulator-metal) electric capacity is made up of the bottom crown stacking gradually from the bottom to top, insulating barrier and top crown,
MIM capacitor mainly has planar MIM capacitor and stacking MIM capacitor two types.Because stacking MIM capacitor is compared to tradition
MIM capacitor (i.e. planar MIM capacitor) can save a lot of chip spaces, and it is widely used.
In order to detect the performance of described planar MIM capacitor and described stacking MIM capacitor, need setting corresponding detection structure pair
It is detected.The detection structure of described planar MIM capacitor and described stacking MIM capacitor is respectively as shown in Figures 1 and 2.
As shown in Figure 1, the detection structure of existing planar MIM capacitor includes the first MIM capacitor unit 11 and the second MIM capacitor
Unit 12, described first MIM capacitor unit 11 and described second MIM capacitor unit 12 all include stacking gradually from the bottom to top
Bottom crown 111, insulating barrier 112 and top crown 113；Described first MIM capacitor unit 11 and described second MIM capacitor
The bottom crown 111 of unit 12 is made up of same layer metal level, and described first MIM capacitor unit 11 and described 2nd MIM are electric
The bottom crown 111 of appearance unit 12 is connected to first electrode (not shown) after being connected with another metal level 14 by metal plug 13,
The top crown 113 of described first MIM capacitor unit 11 and described second MIM capacitor unit 12 pass through metal plug 13 with
Another metal level 14 is connected to second electrode (not shown) after being connected.As shown in Figure 2, existing stacking MIM capacitor
Detection structure includes the first MIM capacitor unit 11 and the second MIM capacitor unit 12, described first MIM capacitor unit 11
And described second MIM capacitor unit 12 all includes the bottom crown 111, insulating barrier 112 and the top crown that stack gradually from the bottom to top
113；The bottom crown 111 of described first MIM capacitor unit 11 and described second MIM capacitor unit 12 is by different metals
Layer is constituted, the bottom crown 111 of described second MIM capacitor unit 12 and Top electrode 113 pass through respectively metal plug 13 with another
Metal level 14 is connected to first electrode (not shown) and second electrode (not shown) after being connected；Described first MIM capacitor
The Top electrode 113 of unit 11 is connected by metal plug 13 with the bottom electrode 111 of described second MIM capacitor unit 12,
The bottom crown 113 of described first MIM capacitor unit 11 is connected to after being connected with another metal level 14 by metal plug 13
Second electrode (not shown).The circuit diagram of described planar MIM capacitor and described stacking MIM capacitor is all as shown in figure 3, institute
State the first MIM capacitor unit in parallel with described second MIM capacitor unit after be connected to described first electrode 15 and described second
Between electrode 16.
When detecting for above two detection structure, if finding detection structural failure, by two methods judgement can be
The MIM element failure of which or which layer：One by detecting, by On line inspection, all technique records that structure is completed, with true
Surely it is to go wrong in any procedure；Two is to carry out failure analysis one by one or successively, to eventually find the MIM unit of inefficacy.So
And, in above two method, whole detection process is comparatively laborious, takes longer, inherently causes the waste of manpower financial capacity.
Therefore, it is necessary to provide a kind of stacking MIM capacitor detection structure and its detection method, to change drawbacks described above.
Content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of stacking MIM capacitor detection structure and its
Detection method, detects the inspection in detection which or which layer MIM element failure for the structure for solving MIM of the prior art
Survey process is comparatively laborious, time-consuming longer problem.
For achieving the above object and other related purposes, the present invention provides a kind of stacking MIM capacitor detection structure, described stacking
MIM capacitor detection structure includes first electrode and second electrode, and described stacking MIM capacitor detection structure includes：First MIM
Capacitor cell, the second MIM capacitor unit and diode；Wherein
In both described first MIM capacitor unit and described 2nd MIM unit, any one and described Diode series are to form string
Connection structure, another one and described tandem construction parallel are to form parallel-connection structure；Described parallel-connection structure be connected to described first electrode with
Between described second electrode.
As the present invention stacking MIM capacitor detect structure a kind of preferred version, described first MIM capacitor unit with described
Diode series to form cascaded structure, described cascaded structure in parallel with described second MIM capacitor unit to form parallel-connection structure.
Stacking MIM capacitor as the present invention detects a kind of preferred version of structure, and described stacking MIM capacitor detects structure bag
Include Semiconductor substrate, in described Semiconductor substrate, include n-type doping region and p-type doped region, described p-type doped region bag
Enclose described n-type doping region and form described diode；
Described first MIM capacitor unit and described second MIM capacitor unit are formed at described Semiconductor substrate successively from the bottom to top
On；Described first MIM capacitor unit and described second MIM capacitor unit are connected via metal plug；Described 2nd MIM
Capacitor cell is connected with described first electrode and second electrode, described first MIM capacitor unit and described p-type doped region
It is connected；Described n-type doping region is connected with described second electrode.
Stacking MIM capacitor as the present invention detects a kind of preferred version of structure, described first MIM capacitor unit and described
Second MIM capacitor unit is stepped construction, includes bottom crown, insulating barrier and top crown from the bottom to top successively；
The top crown phase of the bottom crown of described second MIM capacitor unit and described first electrode and described first MIM capacitor unit
Connect, the top crown of described second MIM capacitor unit is connected with described second electrode；Described first MIM capacitor unit
Bottom crown is connected with described p-type doped region.
As the present invention stacking MIM capacitor detect structure a kind of preferred version, described second MIM capacitor unit with described
Diode series to form cascaded structure, described cascaded structure in parallel with described first MIM capacitor unit to form parallel-connection structure.
Stacking MIM capacitor as the present invention detects a kind of preferred version of structure, and described stacking MIM capacitor detects structure bag
Include Semiconductor substrate, in described Semiconductor substrate, include n-type doping region and p-type doped region, described p-type doped region bag
Enclose described n-type doping region and form described diode；
Described first MIM capacitor unit and described second MIM capacitor unit are formed at described Semiconductor substrate successively from the bottom to top
On；Described first MIM capacitor unit and described second MIM capacitor unit are connected via metal plug；A described MIM
Capacitor cell is connected with described second electrode, described second MIM capacitor unit and described second electrode and described n-type doping
Region is connected；Described p-type doped region is connected with described first electrode.
Stacking MIM capacitor as the present invention detects a kind of preferred version of structure, described first MIM capacitor unit and described
Second MIM capacitor unit is stepped construction, includes bottom crown, insulating barrier and top crown from the bottom to top successively；
The bottom crown of described second MIM capacitor unit and the upper pole of described n-type doping region and described first MIM capacitor unit
Plate is connected, and the top crown of described second MIM capacitor unit is connected with described second electrode；Described first MIM capacitor list
The bottom crown of unit is connected with described second electrode.
The present invention also provides a kind of stacking MIM capacitor to detect the detection method of structure, and described detection method includes：
S1：Stacking MIM capacitor detection structure as any one of in such scheme is provided, applies in described first electrode
Whether forward voltage, apply negative voltage in described second electrode, have electric current to pass through, and then judge described stacking in testing circuit
Whether MIM capacitor detection structure lost efficacy, if described stacking MIM capacitor detection structure did not lost efficacy, detection terminates；If described layer
Folded MIM capacitor detects structural failure, then execution step S2；
S2：Again apply negative voltage in described first electrode, apply forward voltage in described second electrode, in testing circuit be
No have electric current to pass through, and then judges described first MIM capacitor unit or described second MIM capacitor element failure.
As a kind of preferred version of the detection method of the stacking MIM capacitor detection structure of the present invention, judge described stacking MIM
The concrete grammar whether capacitive detecting structure lost efficacy is：If no current passes through in circuit, judge described stacking MIM capacitor detection
Structure did not lost efficacy；If there being electric current to pass through in circuit, judge described stacking MIM capacitor detection structural failure.
As a kind of preferred version of the detection method of the stacking MIM capacitor detection structure of the present invention, judge a described MIM
The concrete grammar of capacitor cell or described second MIM capacitor element failure is：If no current passes through in circuit, judge with described
The MIM capacitor element failure of Diode series；If there being electric current to pass through in circuit, judge the MIM with described tandem construction parallel
Capacitor cell lost efficacy.
The present invention also provides a kind of stacking MIM capacitor to detect the detection method of structure, and described detection method includes：
S1：Stacking MIM capacitor detection structure as any one of such scheme is provided, applies in described first electrode negative
To voltage, apply forward voltage in described second electrode, in testing circuit, whether have electric current to pass through, and then judge to connect with described
Whether structure MIM capacitor unit in parallel lost efficacy, if the MIM capacitor element failure with described tandem construction parallel, detection knot
Bundle；If not losing efficacy with the MIM capacitor unit of described tandem construction parallel, execution step S2；
S2：Again apply forward voltage in described first electrode, apply negative voltage in described second electrode, in testing circuit be
No have electric current to pass through, and then judges whether lost efficacy with the MIM capacitor unit of described Diode series.
As a kind of preferred version of the detection method of the stacking MIM capacitor detection structure of the present invention, judge and described cascaded structure
The concrete grammar whether MIM capacitor unit in parallel lost efficacy is：If no current passes through in circuit, judge and described cascaded structure
MIM capacitor unit in parallel did not lost efficacy；If there being electric current to pass through in circuit, judge the MIM electricity with described tandem construction parallel
Hold element failure.
As a kind of preferred version of the detection method of the stacking MIM capacitor detection structure of the present invention, judge and described diode string
The concrete grammar that whether lost efficacy of MIM capacitor unit of connection is：If no current passes through in circuit, judge and described Diode series
MIM capacitor unit do not lost efficacy；If there being electric current to pass through in circuit, judge the MIM capacitor unit with described Diode series
Lost efficacy.
As described above, the stacking MIM capacitor detection structure of the present invention and its detection method, have the advantages that：By
Series diode on one layer of MIM capacitor unit, can quickly and easily detect the MIM capacitor unit of inefficacy, greatly save
Detection time, and then improve detection efficiency.
Brief description
Fig. 1 is shown as the structural representation that planar MIM capacitor of the prior art detects structure.
Fig. 2 is shown as the structural representation that stacking MIM capacitor of the prior art detects structure.
Fig. 3 is shown as planar MIM capacitor of the prior art and detects that structure and stacking MIM capacitor detect the circuit diagram of structure.
The stacking MIM capacitor that Fig. 4 is shown as provide in the embodiment of the present invention one detects the structural representation of structure.
The stacking MIM capacitor that Fig. 5 is shown as provide in the embodiment of the present invention one detects the circuit diagram of structure.
The stacking MIM capacitor that Fig. 6 is shown as provide in the embodiment of the present invention two detects the structural representation of structure.
The stacking MIM capacitor that Fig. 7 is shown as provide in the embodiment of the present invention two detects the circuit diagram of structure.
The flow chart that the stacking MIM capacitor that Fig. 8 is shown as provide in the embodiment of the present invention three detects the detection method of structure.
Fig. 9 to Figure 10 is shown as in the detection method of stacking MIM capacitor detection structure provide in the embodiment of the present invention three with reality
The detection structure that applying provides in example one is the circuit diagram of example.
The flow chart that the stacking MIM capacitor that Figure 11 is shown as provide in the embodiment of the present invention four detects the detection method of structure.
Figure 12 to Figure 13 is shown as in the detection method of stacking MIM capacitor detection structure provide in the embodiment of the present invention four with reality
The detection structure that applying provides in example one is the circuit diagram of example.
Component label instructions
11 first MIM capacitor units
111 bottom crowns
112 insulating barriers
113 top crowns
12 second MIM capacitor units
13 metal plugs
14 metal levels
15 first electrodes
16 second electrodes
21 first MIM capacitor units
211 bottom crowns
212 insulating barriers
213 top crowns
22 second MIM capacitor units
23 metal plugs
24 metal levels
25 first electrodes
26 second electrodes
27 Semiconductor substrate
28 diodes
281 n-type doping regions
282 p-type doped regions
Specific embodiment
Hereinafter embodiments of the present invention are illustrated by particular specific embodiment, those skilled in the art can be taken off by this specification
The content of dew understands other advantages and effect of the present invention easily.
Refer to Fig. 4 to Figure 13.It should be clear that the depicted structure of the appended diagram of this specification, ratio, size etc., all only in order to
Content disclosed in cooperation description, so that those skilled in the art understands and reads, being not limited to the present invention can implement
Qualificationss, therefore do not have technical essential meaning, the adjustment of the modification of any structure, the change of proportionate relationship or size,
Under not affecting present invention effect that can be generated by and the purpose that can reach, all should still fall in disclosed technology contents
Obtain in the range of covering.Meanwhile, in this specification cited as " on ", D score, "left", "right", " middle part " and " one " etc.
Term, be merely convenient to describe understand, and be not used to limit the enforceable scope of the present invention, the change of its relativeness or
Adjustment, under no essence change technology contents, when being also considered as the enforceable category of the present invention.
Refer to Fig. 4 to Fig. 7, the present invention provides a kind of stacking MIM capacitor detection structure, described stacking MIM capacitor detection
Structure includes first electrode 25 and second electrode 26, and described stacking MIM capacitor detection structure includes：First MIM capacitor list
First 21, second MIM capacitor unit 22 and diode 28；Wherein
In both described first MIM capacitor unit 21 and described 2nd MIM unit 22, any one is gone here and there with described diode 28
, to form cascaded structure, another one and described tandem construction parallel are to form parallel-connection structure for connection；Described parallel-connection structure is connected to described
Between first electrode 25 and described second electrode 26.For the ease of understanding technical scheme, below the present invention is provided
Stacking MIM capacitor detection structure specifically state.
Embodiment one
Refer to Fig. 4 to Fig. 5, the present invention provides a kind of stacking MIM capacitor detection structure, described stacking MIM capacitor detection
Structure includes first electrode 25 and second electrode 26, and described stacking MIM capacitor detection structure includes：First MIM capacitor list
First 21, second MIM capacitor unit 22 and diode 28；Wherein, described first MIM capacitor unit 21 and described two poles
Pipe 28 is connected to form cascaded structure, described cascaded structure in parallel with described second MIM capacitor unit 22 to form parallel-connection structure；
Described parallel-connection structure is connected between described first electrode 25 and described second electrode 26.
As an example, described stacking MIM capacitor detection structure includes Semiconductor substrate 27, includes in described Semiconductor substrate 27
N-type doping region 281 and p-type doped region 282, described p-type doped region 282 surrounds described n-type doping region 281
Form described diode 28；Described first MIM capacitor unit 21 and described second MIM capacitor unit 22 are successively from the bottom to top
It is formed in described Semiconductor substrate 27；Specifically, described first MIM capacitor unit 21 and described second MIM capacitor list
Unit 22 is formed on the different metal layer 24 in described Semiconductor substrate 27 successively from the bottom to top, and Fig. 4 is with a described MIM
Capacitor cell 21 is formed on the 3rd metal level in described Semiconductor substrate 27, described second MIM capacitor unit 22 is formed
Example on the 4th metal level on described quasiconductor 27.Described first MIM capacitor unit 21 and described second MIM capacitor
Unit 22 is stepped construction, includes bottom crown 211, insulating barrier 212 and top crown 213 from the bottom to top successively；Described second
The bottom crown 211 of MIM capacitor unit 22 passes through metal plug 23 with described first electrode 25 and a metal level 24 is connected,
And the bottom crown 211 of described second MIM capacitor unit 22 is passed through with the top crown 213 of described first MIM capacitor unit 21
Metal plug 23 is connected, and the top crown 213 of described second MIM capacitor unit 22 and described second electrode 26 pass through metal
Connector 23 and a metal level 24 are connected；Bottom crown 211 and the described p-type doped region of described first MIM capacitor unit 21
Domain 282 is connected by metal plug 23；Described n-type doping region 281 and described second electrode 26 pass through metal plug 23
And one metal level 24 be connected.
As an example, described n-type doping region 281 is heavily doped region, described 281 lightly doped regions of p-type doped region；
I.e. the ion doping concentration in described n-type doping region 281 is more than or equal to 1E18cm-3, in described p-type doped region 282
Ion doping concentration be less than or equal to 1E16cm-3.
As an example, connect described n-type doping region 281 and described second electrode 26 described metal plug 23 be serially connected with to
Corresponding many of few metal level 24 with described first MIM capacitor unit 21 and described second MIM capacitor unit 22 place
Layer metal level 24, connect described n-type doping region 281 and described second electrode 26 described metal plug 23 concatenation described
Metal level 24 be connected described p-type doped region 282, described first MIM capacitor unit 21, described second MIM capacitor
It is separated with certain spacing between the described metal level 24 of metal plug 23 concatenation of unit 22 and described first electrode 25.
As an example, described first electrode 25 is anode, and described second electrode 26 is negative electrode.
As an example, described first electrode 25 is negative electrode, and described second electrode 26 is anode.
By described diode 28 of connecting on described first MIM capacitor unit 21, can quickly and easily detect it is described
First MIM unit 21 lost efficacy or described 2nd MIM unit 22 lost efficacy, and greatlys save detection time, and then improves
Detection efficiency.
Embodiment two
Refer to Fig. 6 to Fig. 7, the present invention also provides a kind of stacking MIM capacitor detection structure, described stacking MIM capacitor inspection
Geodesic structure includes first electrode 25 and second electrode 26, and described stacking MIM capacitor detection structure includes：First MIM capacitor
Unit 21, the second MIM capacitor unit 22 and diode 28；Wherein, described second MIM capacitor unit 22 and described two
Pole pipe 28 is connected to form cascaded structure, described cascaded structure in parallel with described first MIM capacitor unit 21 to be formed and to connect
Structure；Described parallel-connection structure is connected between described first electrode 25 and described second electrode 26.
As an example, described stacking MIM capacitor detection structure includes Semiconductor substrate 27, includes in described Semiconductor substrate 27
N-type doping region 281 and p-type doped region 282, described p-type doped region 282 surrounds described n-type doping region 281
Form described diode 28；Described first MIM capacitor unit 21 and described second MIM capacitor unit 22 are successively from the bottom to top
It is formed in described Semiconductor substrate 27；Specifically, described first MIM capacitor unit 21 and described second MIM capacitor list
Unit 22 is formed on the different metal layer 24 in described Semiconductor substrate 27 successively from the bottom to top, and Fig. 6 is equally with described first
MIM capacitor unit 21 is formed on the 3rd metal level in described Semiconductor substrate 27, described second MIM capacitor unit 22
It is formed at example on the 4th metal level on described quasiconductor 27.Described first MIM capacitor unit 21 and described 2nd MIM
Capacitor cell 22 is stepped construction, includes bottom crown 211, insulating barrier 212 and top crown 213 from the bottom to top successively；Described
Bottom crown 211 and described n-type doping region 281 and the described first MIM capacitor unit 21 of the second MIM capacitor unit 22
Top crown 213 be connected by metal plug 23, the top crown of described second MIM capacitor unit 22 213 and described second
Electrode 26 passes through metal plug 23 and a metal level 24 is connected；The bottom crown 211 of described first MIM capacitor unit 21
Pass through metal plug 23 with described second electrode 26 and metal level 24 is connected；Described p-type doped region 282 and described first
Electrode 25 passes through metal plug 23 and a metal level 24 is connected.
As an example, described n-type doping region 281 is heavily doped region, described 281 lightly doped regions of p-type doped region；
I.e. the ion doping concentration in described n-type doping region 281 is more than or equal to 1E18cm-3, in described p-type doped region 282
Ion doping concentration be less than or equal to 1E16cm-3.
As an example, connect described n-type doping region 281 and described first electrode 25 described metal plug 23 be serially connected with to
Corresponding many of few metal level 24 with described first MIM capacitor unit 21 and described second MIM capacitor unit 22 place
Layer metal level 24, connects the described metal plug 23 of described n-type doping region 281 and described second MIM capacitor unit 22
The described metal level 24 of concatenation and metal plug 23 concatenation being connected described p-type doped region 282 and described first electrode 25
It is separated with certain spacing between described metal level 24.
As an example, described first electrode 25 is anode, and described second electrode 26 is negative electrode.
As an example, described first electrode 25 is negative electrode, and described second electrode 26 is anode.
By described diode 28 of connecting on described second MIM capacitor unit 22, can quickly and easily detect it is described
First MIM unit 21 lost efficacy or described 2nd MIM unit 22 lost efficacy, and greatlys save detection time, and then improves
Detection efficiency.
Embodiment three
Refer to Fig. 8 Figure 10, the present embodiment also provides a kind of stacking MIM capacitor to detect the detection method of structure, described inspection
Survey method includes：
S1：Stacking MIM capacitor detection structure is provided, applies forward voltage in described first electrode 25, in described second electrode
Whether 26 applying negative voltage, have electric current to pass through in testing circuit, and then whether judges described stacking MIM capacitor detection structure
Lost efficacy, if described stacking MIM capacitor detection structure did not lost efficacy, detection terminates；If described stacking MIM capacitor detection structure is lost
Effect, then execution step S2；
S2：Again apply negative voltage in described first electrode 25, apply forward voltage, detection electricity in described second electrode 26
Whether there is electric current to pass through in road, and then judge that described first MIM capacitor unit 21 or described second MIM capacitor unit 22 lose
Effect.
Specifically, in the present embodiment, described stacking MIM capacitor detects that structure is the layer described in embodiment one or embodiment two
Folded MIM capacitor detects structure, and for the ease of description, the described stacking MIM capacitor detection structure in the present embodiment is with embodiment
Stacking MIM capacitor detection structure described in one illustrates for example.Now, the MIM electricity connected with described diode 28
Hold unit and be the first MIM capacitor unit 21, be the second MIM capacitor list with the MIM capacitor unit of tandem construction parallel
Unit 22.Described stacking MIM capacitor detection structure refers to embodiment one, is described again here.
Execution step S1, refers to S1 step and the Fig. 9 in Fig. 8, provides stacking MIM capacitor detection structure, described the
Whether one electrode 25 applies forward voltage, apply negative voltage in described second electrode 26, have electric current to pass through in testing circuit,
And then judge whether described stacking MIM capacitor detection structure lost efficacy, and if described stacking MIM capacitor detection structure did not lost efficacy, inspection
Survey terminates；If described stacking MIM capacitor detection structural failure, execution step S2.
Specifically, described first electrode 25 apply forward voltage, described second electrode 26 apply negative voltage, described two
Pole pipe 28 is in forward conduction state, now described first MIM capacitor unit 21 and described second MIM capacitor unit 22
The branch road being located is in conducting state, if in described first MIM capacitor unit 21 or described second MIM capacitor unit 22
Any one is had to occur losing efficacy, now described first MIM capacitor unit 21 or described second MIM capacitor unit 22 can be hit
Wear, whole testing circuit can detect electric current and passed through, therefore, judge that described stacking MIM capacitor detection structure is
Whether the concrete grammar of no inefficacy is in testing circuit has electric current to pass through, if no current passes through in circuit, judges described stacking
MIM capacitor detection structure did not lost efficacy；If there being electric current to pass through in circuit, judge described stacking MIM capacitor detection structural failure.
Execution step S2, refers to figure, the S2 step in 8 and Figure 10, again applies negative voltage in described first electrode 25,
Apply forward voltage in described second electrode 26, in testing circuit, whether have electric current to pass through, and then judge a described MIM electricity
Hold unit 21 or described second MIM capacitor unit 22 lost efficacy.
Specifically, again apply negative voltage in described first electrode 25, after described second electrode 26 applies forward voltage,
Described diode 28 is in reverse blocking state, and the branch road that now described first MIM capacitor unit 21 is located is in cut-off state,
And branch road that described second MIM capacitor unit 22 is located is in the conduction state.Due to now only having described second MIM capacitor
The branch road conducting that unit 22 is located, if there being electric current to pass through in circuit, may determine that described second MIM capacitor unit 22 lost efficacy,
The i.e. MIM capacitor element failure with described tandem construction parallel；If no current passes through in circuit, judge a described MIM
Capacitor cell 21 lost efficacy, the MIM capacitor element failure connected with described diode 28.
It is only necessary to be applied with respectively at twice in described first electrode 25 and described second electrode 26 in whole detection process
Whether have electric current to pass through to can determine whether forward or backwards in testing circuit after voltage is that described first MIM capacitor unit 21 lost efficacy also
It is that described second MIM capacitor unit 22 lost efficacy, whole detection process is convenient and swift, greatlys save detection time, and then
Improve detection efficiency.
With the described stacking MIM capacitor in embodiment two detect method that structure detected for example with embodiment one
Described stacking MIM capacitor detects that the detection method that structure is example is similar to, and is described again here.
Example IV
Refer to Figure 11 to Figure 13, the present embodiment also provides a kind of stacking MIM capacitor to detect the detection method of structure, described inspection
Survey method includes：
S1：Stacking MIM capacitor detection structure is provided, applies negative voltage in described first electrode 25, in described second electrode
Whether 26 applying forward voltages, have electric current to pass through, and then judge the MIM capacitor with described tandem construction parallel in testing circuit
Whether unit lost efficacy, if the MIM capacitor element failure with described tandem construction parallel, detection terminates；If with described cascaded structure
MIM capacitor unit in parallel did not lost efficacy, then execution step S2；
S2：Again apply forward voltage in described first electrode 25, apply negative voltage, detection electricity in described second electrode 26
Whether there is electric current to pass through in road, and then judge whether lost efficacy with the MIM capacitor unit of described Diode series.
Specifically, in the present embodiment, described stacking MIM capacitor detects that structure is the layer described in embodiment one or embodiment two
Folded MIM capacitor detects structure, and for the ease of description, the described stacking MIM capacitor detection structure in the present embodiment is with embodiment
Stacking MIM capacitor detection structure described in one illustrates for example.Now, the MIM electricity connected with described diode 28
Hold unit and be the first MIM capacitor unit 21, be the second MIM capacitor list with the MIM capacitor unit of tandem construction parallel
Unit 22.Described stacking MIM capacitor detection structure refers to embodiment one, is described again here.
Execution step S1, refers to S1 step and the Figure 12 in Figure 11, provides the stacking MIM electricity described in an embodiment one
Hold detection structure, apply negative voltage in described first electrode 25, apply forward voltage, detection electricity in described second electrode 26
Whether have electric current to pass through in road, and then judge whether lost efficacy with the MIM capacitor unit of described tandem construction parallel, if with described string
Connection structure MIM capacitor element failure in parallel, detection terminates；If not losing with the MIM capacitor unit of described tandem construction parallel
Effect, then execution step S2.
Specifically, apply negative voltage in described first electrode 2, apply forward voltage, described two poles in described second electrode 26
Pipe 28 is in reverse blocking state, and the branch road that now described first MIM capacitor unit 21 is located is in cut-off state, and described
The branch road that second MIM capacitor unit 22 is located is in the conduction state.Due to now only having described second MIM capacitor unit 22
Be located branch road conducting, if there being electric current to pass through in circuit, may determine that described second MIM capacitor unit 22 lost efficacy, that is, with
The MIM capacitor element failure of described tandem construction parallel；If no current passes through in circuit, judge and described tandem construction parallel
MIM capacitor unit do not lost efficacy.
Execution step S2, refers to figure, the S2 step in 11 and Figure 13, again applies forward voltage in described first electrode 25,
Apply negative voltage in described second electrode 26, in testing circuit, whether have electric current to pass through, and then judge and described Diode series
MIM capacitor unit whether lost efficacy.
Specifically, again apply forward voltage in described first electrode 25, apply negative voltage, institute in described second electrode 26
State diode 28 and be in forward conduction state, now described first MIM capacitor unit 21 and described second MIM capacitor unit
The branch road at 22 places is in conducting state.Due to not lost efficacy with judging described second MIM capacitor unit 22 in S1 step,
The branch road that i.e. described second MIM capacitor unit 22 is located anyway does not all have electric current to be passed through, therefore, if there being electricity in circuit
Stream passes through, then may determine that described first MIM capacitor unit 21 lost efficacy, i.e. the MIM capacitor list with described Diode series
Unit lost efficacy；If no current passes through in circuit, judge that described first MIM capacitor unit 21 did not lost efficacy, that is, with described diode
The MIM capacitor unit of series connection did not lost efficacy, that is, entirely described stacking MIM capacitor detection structure did not lost efficacy.
In whole detection process, if the described second MIM capacitor unit 22 of described diode 28 of not connecting lost efficacy it is only necessary to
Apply negative voltage in described first electrode 25, apply forward voltage in described second electrode 26, then pass through in testing circuit
Electric current whether is had to pass through, a step can detect；Even if the first step does not detect described second MIM capacitor unit 22 and loses
Effect, nor judge whether described stacking MIM capacitor detection structure lost efficacy, now only need to be applied to described first electrode by described
25 and described second electrode 26 on voltage intermodulation, and in testing circuit, whether have electric current to pass through, you can to judge a described MIM
Whether capacitor cell 21 lost efficacy, and whole detection process is convenient and swift, greatlys save detection time, and then improve detection effect
Rate.
With the described stacking MIM capacitor in embodiment two detect method that structure detected for example with embodiment one
Described stacking MIM capacitor detects that the detection method that structure is example is similar to, and is described again here.
In sum, the present invention provides a kind of stacking MIM capacitor detection structure and its detection method, by one layer of MIM electricity
Hold series diode on unit, can quickly and easily detect the MIM capacitor unit of inefficacy, greatly save detection time,
And then improve detection efficiency.
Above-described embodiment only principle of the illustrative present invention and its effect, not for the restriction present invention.Any it is familiar with this skill
The personage of art all can carry out modifications and changes without prejudice under the spirit and the scope of the present invention to above-described embodiment.Therefore, such as
Those of ordinary skill in the art completed under without departing from disclosed spirit and technological thought all etc.
Effect modifications and changes, must be covered by the claim of the present invention.
Claims (13)
1. a kind of stacking MIM capacitor detection structure, described stacking MIM capacitor detection structure includes first electrode and second electrode,
It is characterized in that, described stacking MIM capacitor detection structure includes：First MIM capacitor unit, the second MIM capacitor list
Unit and diode；Wherein
In both described first MIM capacitor unit and described 2nd MIM unit, any one and described Diode series are with shape
Become cascaded structure, another one and described tandem construction parallel are to form parallel-connection structure；Described parallel-connection structure is connected to described first
Between electrode and described second electrode.
2. according to claim 1 stacking MIM capacitor detection structure it is characterised in that：Described first MIM capacitor unit
With described Diode series to form cascaded structure, described cascaded structure in parallel with described second MIM capacitor unit to be formed
Parallel-connection structure.
3. according to right 2 requires stacking MIM capacitor detection structure it is characterised in that：Described stacking MIM capacitor detection
Structure includes Semiconductor substrate, includes n-type doping region and p-type doped region, described p-type in described Semiconductor substrate
Doped region surrounds described n-type doping region and forms described diode；
Described first MIM capacitor unit and described second MIM capacitor unit are formed at described quasiconductor successively from the bottom to top
On substrate；Described first MIM capacitor unit and described second MIM capacitor unit are connected via metal plug；Described
Two MIM capacitor units are connected with described first electrode and second electrode, described first MIM capacitor unit and described P
Type doped region is connected；Described n-type doping region is connected with described second electrode.
4. according to right 3 requires stacking MIM capacitor detection structure it is characterised in that：Described first MIM capacitor unit
And described second MIM capacitor unit is stepped construction, include bottom crown, insulating barrier and top crown from the bottom to top successively；
The bottom crown of described second MIM capacitor unit and the upper pole of described first electrode and described first MIM capacitor unit
Plate is connected, and the top crown of described second MIM capacitor unit is connected with described second electrode；Described first MIM capacitor
The bottom crown of unit is connected with described p-type doped region.
5. according to claim 1 stacking MIM capacitor detection structure it is characterised in that：Described second MIM capacitor unit
With described Diode series to form cascaded structure, described cascaded structure in parallel with described first MIM capacitor unit to be formed
Parallel-connection structure.
6. according to right 5 requires stacking MIM capacitor detection structure it is characterised in that：Described stacking MIM capacitor detection
Structure includes Semiconductor substrate, includes n-type doping region and p-type doped region, described p-type in described Semiconductor substrate
Doped region surrounds described n-type doping region and forms described diode；
Described first MIM capacitor unit and described second MIM capacitor unit are formed at described quasiconductor successively from the bottom to top
On substrate；Described first MIM capacitor unit and described second MIM capacitor unit are connected via metal plug；Described
One MIM capacitor unit is connected with described second electrode, described second MIM capacitor unit and described second electrode and described
N-type doping region is connected；Described p-type doped region is connected with described first electrode.
7. according to right 6 requires stacking MIM capacitor detection structure it is characterised in that：Described first MIM capacitor unit
And described second MIM capacitor unit is stepped construction, include bottom crown, insulating barrier and top crown from the bottom to top successively；
The bottom crown of described second MIM capacitor unit and described n-type doping region and described first MIM capacitor unit
Top crown is connected, and the top crown of described second MIM capacitor unit is connected with described second electrode；A described MIM
The bottom crown of capacitor cell is connected with described second electrode.
8. a kind of stacking MIM capacitor detects the detection method of structure it is characterised in that described detection method includes：
S1：There is provided the stacking MIM capacitor detection structure as described in any one of claim 1 to 7, in the described first electricity
Whether pole applies forward voltage, apply negative voltage in described second electrode, have electric current to pass through in testing circuit, and then judges
Whether described stacking MIM capacitor detection structure lost efficacy, if described stacking MIM capacitor detection structure did not lost efficacy, detection terminates；
If described stacking MIM capacitor detection structural failure, execution step S2；
S2：Again apply negative voltage in described first electrode, apply forward voltage, testing circuit in described second electrode
In whether have electric current to pass through, and then judge described first MIM capacitor unit or described second MIM capacitor element failure.
9. according to claim 8 stacking MIM capacitor detect structure detection method it is characterised in that：Judge described stacking
MIM capacitor detects that the concrete grammar whether structure lost efficacy is：If no current passes through in circuit, judge described stacking MIM
Capacitive detecting structure did not lost efficacy；If there being electric current to pass through in circuit, judge described stacking MIM capacitor detection structural failure.
10. according to claim 9 stacking MIM capacitor detect structure detection method it is characterised in that：Judge described
The concrete grammar of the first MIM capacitor unit or described second MIM capacitor element failure is：If no current passes through in circuit,
Then judge the MIM capacitor element failure with described Diode series；If there being electric current to pass through in circuit, judge and described string
Connection structure MIM capacitor element failure in parallel.
A kind of 11. stacking MIM capacitor detect the detection method of structure it is characterised in that described detection method includes：
S1：There is provided the stacking MIM capacitor detection structure as described in any one of claim 1 to 7, in the described first electricity
Whether pole applies negative voltage, apply forward voltage in described second electrode, have electric current to pass through in testing circuit, and then judges
Whether lost efficacy with the MIM capacitor unit of described tandem construction parallel, if the MIM capacitor unit with described tandem construction parallel
Lost efficacy, detection terminates；If not losing efficacy with the MIM capacitor unit of described tandem construction parallel, execution step S2；
S2：Again apply forward voltage in described first electrode, apply negative voltage, testing circuit in described second electrode
In whether have electric current to pass through, and then judge whether lost efficacy with the MIM capacitor unit of described Diode series.
12. according to claim 11 stacking MIM capacitor detect structures detection methods it is characterised in that：Judge and institute
Stating the concrete grammar whether the MIM capacitor unit of tandem construction parallel lost efficacy is：If no current passes through in circuit, judge
Do not lost efficacy with the MIM capacitor unit of described tandem construction parallel；If there being electric current to pass through in circuit, judge to connect with described
Structure MIM capacitor element failure in parallel.
13. according to claim 12 stacking MIM capacitor detect structures detection methods it is characterised in that：Judge and institute
Stating the concrete grammar whether the MIM capacitor unit of Diode series lost efficacy is：If no current passes through in circuit, judge with
The MIM capacitor unit of described Diode series did not lost efficacy；If there being electric current to pass through in circuit, judge and described diode string
The MIM capacitor element failure of connection.
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| Publication number | Publication date |
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| CN106468755B (en) | 2019-01-04 |
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