CN106468595A - A kind of optical sensor and its spectral measurement method - Google Patents
A kind of optical sensor and its spectral measurement method Download PDFInfo
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- CN106468595A CN106468595A CN201510501071.4A CN201510501071A CN106468595A CN 106468595 A CN106468595 A CN 106468595A CN 201510501071 A CN201510501071 A CN 201510501071A CN 106468595 A CN106468595 A CN 106468595A
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- photosensitive unit
- optical sensor
- nano belt
- semiconductor nanowires
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Abstract
The present invention relates to optical sensor field, disclose a kind of optical sensor, this optical sensor includes the multiple photosensitive units in dielectric base, each photosensitive unit includes multiple semiconductor nanowires or nano belt and two electrodes being located on described semiconductor nanowires or the two ends of nano belt of or parallel connection, and the photoelectric response characteristic of each described photosensitive unit is different.This optical sensor and its spectral measurement method do not need to adopt light-dividing device, and have good luminous sensitivity and the response speed being exceedingly fast.
Description
Technical field
The present invention relates to optical sensor field, in particular it relates to a kind of optical sensor and its spectral measurement side
Method.
Background technology
When spectral measurement is carried out using current optical sensor, in order to record different wave length in spectrum simultaneously
Light intensity distributions, need using light-dividing device (for example, Amici prism, grating etc.), this increase
The triviality of spectral measurement.
Content of the invention
It is an object of the invention to provide a kind of optical sensor and its spectral measurement method, it does not need to adopt and divides
Light device, and there is good luminous sensitivity and the response speed being exceedingly fast.
To achieve these goals, the present invention provides a kind of optical sensor, and this optical sensor includes being located at absolutely
The suprabasil multiple photosensitive units of edge, each photosensitive unit includes multiple semiconductor nanos of or parallel connection
Line or nano belt and two electrodes being located on described semiconductor nanowires or the two ends of nano belt, and respectively
The photoelectric response characteristic of individual described photosensitive unit is different.
The present invention also provides a kind of spectral measurement method, and the method includes：Multiple photosensitive with tested light irradiation
Unit, each described photosensitive unit include multiple semiconductor nanowires of or parallel connection or nano belt and
Two electrodes on the two ends of described semiconductor nanowires or nano belt, and each described photosensitive unit
Photoelectric response characteristic different；Obtain the photoelectric respone relative intensity of each described photosensitive unit；Meter
Calculate the photoelectric respone relative intensity ratios of each two photosensitive unit in the plurality of photosensitive unit；Foundation is more than
The described photoelectric respone relative intensity ratios of preset value are determining the described wavelength by light-metering.
By technique scheme, because optical sensor has the mutually different multiple light of photoelectric response characteristic
Quick unit, and be to carry out spectral measurement using this multiple photosensitive unit, therefore, it is possible to not need light splitting to set
Record the intensity distributions of the light of different wave length in spectrum in the case of standby simultaneously, and have good photosensitive
Sensitivity and the photoelectric response speed being exceedingly fast.
Other features and advantages of the present invention will be described in detail in subsequent specific embodiment part.
Brief description
Accompanying drawing is used to provide a further understanding of the present invention, and constitutes the part of description, with
Detailed description below is used for explaining the present invention together, but is not construed as limiting the invention.?
In accompanying drawing：
Fig. 1 is the schematic top plan view of the optical sensor according to one embodiment of the present invention；
Fig. 2 is to be shown according to the section of the single photosensitive unit in the optical sensor of one embodiment of the present invention
It is intended to；
Fig. 3 is the electron microscope according to the single photosensitive unit in the optical sensor of one embodiment of the present invention
Show；
Fig. 4 is that the photoelectricity according to the single photosensitive unit in the optical sensor of one embodiment of the present invention rings
Answer the exemplary relationship diagram of relative intensity and illumination frequency；
Fig. 5 is the exemplary spectrum measuring method flow chart according to one embodiment of the present invention；
Fig. 6 is the exemplary light electroresponse curve of two photosensitive units；And
Fig. 7 is that the photoelectric respone relative intensity ratios of two photosensitive units are closed with the exemplary functions of wavelength
System.
Specific embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.It should be appreciated that
Specific embodiment described herein is merely to illustrate and explains the present invention, is not limited to this
Bright.
As depicted in figs. 1 and 2, included positioned at insulation according to the optical sensor of one embodiment of the present invention
Multiple photosensitive units 4 in substrate 5, each photosensitive unit 4 includes multiple quasiconductors of or parallel connection
Nano wire or nano belt 1 and two electricity being located on described semiconductor nanowires or the two ends of nano belt 1
Pole 2, and the photoelectric response characteristic of each described photosensitive unit 4 is different.In this way, it is possible to not
Record the intensity distributions of the light of different wave length in spectrum in the case of needing light-dividing device simultaneously, and have
Good luminous sensitivity and the photoelectric response speed being exceedingly fast and resume speed and thermal tuning characteristic.
Electrode 2 can be made up of silver, gold and other conductive materials.Electrode 2 by each photosensitive unit 4
It is connected to external circuit it becomes possible to obtain each in the case of being irradiated by light according to the optical sensor of the present invention
The photoelectric response characteristic of individual photosensitive unit 4.
Described semiconductor nanowires or nano belt 1 can make each described photosensitive list by modification
The photoelectric response characteristic of unit 4 is different, but the semiconductor nanowires in same described photosensitive unit 4
Or nano belt 1 modification identical so that each semiconductor nanowires in same photosensitive unit 4 or receive
The photoelectric response characteristic of rice band is identical.For example, it is possible to modification is realized by doping, for example permissible
Process is doped using methods such as thermal diffusion, magnetron sputtering, laser induced composite heatings.Due to
The increase of doping content, band gap the narrowing of semi-conducting material, there is red shift in optical absorption peak, namely mix
Miscellaneous rear carrier concentration changes, and leads to semiconductor energy gap structural change, and then affects semi-conducting material
Photoelectric response characteristic, therefore, mix the element class in semiconductor nanowires or nano belt 1 by regulation and control
And concentration, can not obtain having the semiconductor nanowires of different band structures and photoelectric response characteristic or receive
Rice band, for example, mixes the elements such as phosphorus, arsenic, is obtained in that N-type semiconductor nano wire or nano belt.
Preferably, described semiconductor nanowires or nano belt 1 can be selenium, silicon, zinc oxide, titanium dioxide
Stannum, gallium nitride, CdSxSe1-x (0≤x≤1), ZnSxSe1-x (0≤x≤1) nano wire or nanometer
At least one of band.In addition, when semiconductor nanowires or nano belt 1 are selenium nanowires or nano belt,
Due to selenium nanowires or nano belt nontoxic so that also being had well according to the optical sensor of the present invention
Bio-compatibility.
Because, for semiconductor nanowires, no matter light is incident from which angle, and semiconductor nanowires are inhaled
The amount of the light received is just as, and the therefore impact to spectral measurement for the incident angle of light is very little；
And for semiconductor nano-strip, the impact to spectral measurement angle of the angle change of incident illumination is larger.
Therefore, photosensitive unit 4 preferably employs semiconductor nanowires to realize.
Preferably, between each semiconductor nanowires in the plurality of photosensitive unit 4 or nano belt 1 are etc.
Away from arrangement.It will be understood by those skilled in the art that other arrangement modes are also feasible,
Such as non-equidistance arrangement, or arranged on demand.
Preferably, the spacing between two electrodes 2 of each described photosensitive unit 4 is equal, namely
Length according to all semiconductor nanowires in the optical sensor of the present invention or nano belt 1 is equal,
And then ensure that the amount of light that each photosensitive unit 4 absorbs is consistent；But those skilled in the art should
It is understood by, the length of semiconductor nanowires or nano belt 1 can also be unequal.
Preferably, the draw ratio of described semiconductor nanowires or nano belt 1 can be 100-10000.Excellent
Selection of land, the width of described semiconductor nanowires or nano belt 1 can be 100nm-500nm, and length is permissible
For tens to hundreds of micron.
Preferably, described dielectric base 5 can be rigid (for example, quartz glass) or flexible insulation base
Bottom.
In addition, Fig. 3 and Fig. 4 also respectively illustrates according in the optical sensor of one embodiment of the present invention
The Electronic Speculum diagram of single photosensitive unit and the exemplary relation of photoelectric respone relative intensity and illumination frequency
Figure.From fig. 4, it can be seen that the spectrum of visible ray can be detected according to the optical sensor of the present invention, can
Enough light in 300nm-800nm for the Detection wavelength scope.But after by modification, no
With semiconductor nanowires or the scope of optical wavelength that can detect of nano belt also can be different, therefore through suitable
When modification, the optical sensor according to the present invention can also detect visible ray outside light spectrum.
The present invention also provides a kind of spectral measurement method, as shown in figure 5, the method comprises the following steps：
Step 501, with the multiple photosensitive unit of tested light irradiation, each described photosensitive unit include one or
Multiple semiconductor nanowires in parallel or nano belt and be located at described semiconductor nanowires or nano belt
Two electrodes on two ends, and the photoelectric response characteristic of each described photosensitive unit is different.
Wherein, described can be visible ray by light-metering.Certainly, non-visible light is also feasible.This and light
The spectral measurement ranges of quick unit are relevant.
Step 502, obtain the spectral response relative intensity RI of each described photosensitive unit.
Wherein, after photosensitive unit carries out photoelectric respone, photosensitive unit can be drawn by digital simulation
Photoelectric respone curve, and obtain the photoelectric respone of each described photosensitive unit from this photoelectric respone curve
Relative intensity RI.Fig. 6 a and 6b respectively illustrates the exemplary light electroresponse curve of two photosensitive units.
In step 503, the plurality of photosensitive unit of calculating, the photoelectric respone of each two photosensitive unit is relatively strong
Degree ratio.
Step 504, foundation to determine described quilt more than the described photoelectric respone relative intensity ratios of preset value
The wavelength of light-metering.
Functional relationship due to wavelength and spectral response relative intensity ratios can be defined as：
Wherein λ is wavelength, RI1And RI2It is respectively the photoelectric respone relative intensity of photosensitive unit 1 and photosensitive unit 2.
Therefore, it becomes possible to foundation after the photoelectric respone relative intensity ratios obtaining each two photosensitive unit
This photoelectric respone relative intensity ratios is determining the described wavelength by light-metering, and then can also determine by light-metering
Intensity.Fig. 7 shows the photoelectric respone relative intensity ratios of two photosensitive units and the exemplary of wavelength
Functional relationship.It should be appreciated that Fig. 6 and Fig. 7 is only example, the semiconductor nano in photosensitive unit
Line or modified difference, obtained photoelectric respone curve and the photoelectric respone relative intensity ratios of nano belt
Also can be different from the function relation curve of wavelength.
Preferably, described preset value is not less than 3.That is, it is only big in photoelectric respone relative intensity ratios
In the case of certain numerical value, that two photosensitive lists of this photoelectric respone relative intensity ratios are obtained by it
Measured by unit (it is assumed that being photosensitive unit 1 and 2 for the sake of being easy to describe), the value of spectrum is only effectively.
, when photoelectric respone relative intensity ratios are more than 3, then this photoelectric respone phase is obtained by it taking Fig. 7 as a example
The working range of that two photosensitive units (such as photosensitive unit 1 and 2) to intensity rate is
720-760nm.And the wavelength value that wavelength is in other interval light then needs by another two modification
Photosensitive unit (such as photosensitive unit 2 and 3) afterwards is determining.For example, it is assumed that the spectrum of light beam is
From 400nm to 800nm, then when the spectrum to this Shu Guang measures, its 720-760nm scope
Interior spectrum is accomplished by being measured with that combination in Fig. 7, and the spectrum of its all band is accomplished by it
His photosensitive unit combines to measure, and so ensures that the precision of spectral measurement, but also can be true
Determining light beam, to be probably what color, intensity have much etc..
Describe the preferred embodiment of the present invention above in association with accompanying drawing in detail, but, the present invention does not limit
Detail in above-mentioned embodiment, in the range of the technology design of the present invention, can be to the present invention
Technical scheme carry out multiple simple variant, these simple variant belong to protection scope of the present invention.
Additionally, combination in any can also be carried out between the various different embodiment of the present invention, as long as its
Without prejudice to the thought of the present invention, it equally should be considered as content disclosed in this invention.
Claims (11)
1. a kind of optical sensor, this optical sensor includes the multiple photosensitive units in dielectric base,
Each photosensitive unit includes multiple semiconductor nanowires of or parallel connection or nano belt and is located at described
Two electrodes on the two ends of semiconductor nanowires or nano belt, and the photoelectricity sound of each described photosensitive unit
Answer characteristic different.
2. optical sensor according to claim 1, wherein, each in the plurality of photosensitive unit
Individual semiconductor nanowires or the equal or unequal arrangement of nano belt.
3. optical sensor according to claim 1 and 2, wherein, each described photosensitive unit
Spacing between two electrodes is equal.
4. the optical sensor according to any claim in claims 1 to 3, wherein, described
The draw ratio of semiconductor nanowires or nano belt is 100-10000.
5. the optical sensor according to any claim in Claims 1-4, wherein, described
The width of semiconductor nanowires or nano belt is 100nm-500nm, and length is tens to hundreds of micron.
6. the optical sensor according to any claim in claim 1 to 5, wherein, described
Semiconductor nanowires or nano belt make the photoelectric respone of each described photosensitive unit by modification
Characteristic is different, and at the modification of the semiconductor nanowires in same described photosensitive unit or nano belt
Reason is identical.
7. the optical sensor according to any claim in claim 1 to 6, wherein, described
Semiconductor nanowires or nano belt are selenium, silicon, zinc oxide, tin ash, gallium nitride, CdSxSe1-x
(0≤x≤1)、ZnSxSe1-x(0≤x≤1) at least one of nano wire or nano belt.
8. the optical sensor according to any claim in claim 1 to 7, wherein, described
Dielectric base is rigid or flexible dielectric substrate.
9. a kind of spectral measurement method, the method includes：
With the multiple photosensitive unit of tested light irradiation, each described photosensitive unit includes the multiple of or parallel connection
Semiconductor nanowires or nano belt and on the two ends of described semiconductor nanowires or nano belt two
Individual electrode, and the photoelectric response characteristic of each described photosensitive unit is different；
Obtain the photoelectric respone relative intensity of each described photosensitive unit；
Calculate the photoelectric respone relative intensity ratios of each two photosensitive unit in the plurality of photosensitive unit；
To determine the described ripple by light-metering according to the described spectral response relative intensity ratios more than preset value
Long.
10. method according to claim 9, wherein, described is visible ray by light-metering.
11. methods according to claim 9 or 10, wherein, described preset value is not less than 3.
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| CN201510501071.4A CN106468595A (en) | 2015-08-14 | 2015-08-14 | A kind of optical sensor and its spectral measurement method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6939686B2 (en) * | 2000-03-14 | 2005-09-06 | Southwest Research Institute | Methodology of using raman imaging microscopy for evaluating drug action within living cells |
| JP2011053094A (en) * | 2009-09-02 | 2011-03-17 | Kao Corp | Method of measuring amount of adsorption of dispersant |
| CN102270673A (en) * | 2011-07-22 | 2011-12-07 | 重庆科技学院 | Multirange photoelectric detector |
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2015
- 2015-08-14 CN CN201510501071.4A patent/CN106468595A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6939686B2 (en) * | 2000-03-14 | 2005-09-06 | Southwest Research Institute | Methodology of using raman imaging microscopy for evaluating drug action within living cells |
| JP2011053094A (en) * | 2009-09-02 | 2011-03-17 | Kao Corp | Method of measuring amount of adsorption of dispersant |
| CN102270673A (en) * | 2011-07-22 | 2011-12-07 | 重庆科技学院 | Multirange photoelectric detector |
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