CN106468533A - A kind of Graphene strain transducer array - Google Patents
A kind of Graphene strain transducer array Download PDFInfo
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- CN106468533A CN106468533A CN201610860811.8A CN201610860811A CN106468533A CN 106468533 A CN106468533 A CN 106468533A CN 201610860811 A CN201610860811 A CN 201610860811A CN 106468533 A CN106468533 A CN 106468533A
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- graphene
- sensing unit
- graphene strain
- strain
- array
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
Abstract
The invention discloses a kind of Graphene strain transducer array, including the array circuit of arrangement on array circuit plate and array circuit plate, described array circuit plate is provided with some Graphene strain sensing units being connected with array circuit；Described Graphene strain sensing unit relies on signals collecting and processing system will collect signal and be converted to strain value；Described Graphene strain sensing unit includes the sensor film of two pieces of arranged crosswise in length and breadth, and this sensor film is composited by graphene layer and elastomeric polymer layer；Described sensor film two ends are provided with electrode.There is the Graphene strain transducer array of said structure, can induced lateral and longitudinal strain variation simultaneously, greatly expand the range of application of sensor array so that Graphene strain transducer has the development of more diversification.
Description
Technical field
The present invention relates to a kind of Graphene flexible sensor array.
Background technology
Wearable device, electronic skin, intelligent sensing are just energetically changing the mode of people's cognition, thinking and behavior.
Google Glass, iWatch, Electronic Tattoo etc. provides the visual experience of solid for people, extends abundant
Information dimension, excavated the healthy big data of system.Wearable device, electronic skin etc. can be felt as human body skin
Know the senser element of external pressure, strain, temperature, air-flow and haptic signal.Because of its excellent characteristic, electronic skin extensively should
For health monitoring, man-machine identification and, make robot produce tactile, surface can be covered in as clothes, can allow machine
Device people perceives the information such as the orientation of object, shape, hardness.Even so, people live to high-quality, multiple resource obtains, newly
The continuous pursuit of sensory experience still defines great challenge to following wearable device.Especially, examine in health
Survey, man-machine interaction and military field, heavy wearing weaponry and energy supplying system seriously limit the operation spirit of soldier
Activity, battlefield environment complicated and changeable also makes these equipment be not amenable to test.U.S. University of Illinois Rogers teaches
Award (John A Rogers) by the microcircuit design of Metal Substrate, comprehensive integration Flexible Displays, flexible sensing, flexible luminous with
And wireless sensing etc. multi-functional in electronic skin.However, sensor unit is as the core face of electronic skin, Wearable device
Face many challenges：The sensitivity of existing intelligent sensing unit and signal intensity are generally relatively low；Commonly used in flexible circuit
The flexibility of the noble metals such as gold, silver, bio-compatibility are poor, and complex process is it is difficult to form ripe application.
Graphene, state-of-the-art two-dimension nano materials at present, the brand-new characteristic of wearable device, brand-new work(can be given
Energy, brand-new concept.It is provided simultaneously with excellent optics, electricity, mechanics, thermal property.Graphene be known world the thinnest,
Nano material the hardest, its fracture strength is 42N/m2, and intensity, up to 130 GPa, is more than 100 times of iron and steel intensity；Its tool
There is excellent light transmission, 2.3% is only to the optical absorptivity of visible ray and infrared light；Electron mobility exceedes at normal temperatures
15000 cm2/V s, resistivity is only 10-6 Ω/cm, lower than copper and Yin Geng, is the material of resistivity minimum in the world at present；
In addition, the connection between the carbon atom of Graphene is very pliable and tough, so that Graphene has suitable pliability and stablizes
Property, suitable Bending Deformation does not interfere with the performance of Graphene yet.Thin film Graphene chemically stable, relatively conventional metal material
Have more preferable bio-compatibility, the Wearable device based on Graphene can more intelligent green, ecological friendly, the more rich
Body ergonomic designs.Graphene has attracted scientific circles and industrial quarters with its excellent and the optics of uniqueness, electricity and mechanical characteristic
Extensive concern, before the fields such as Wearable device, electronic skin, intelligence sensor, biosensor have a wide range of applications
Scape.
It is seen that Graphene is just progressively being applied to sensor, but the current single side of strain transducer Intellisense
To strain variation, and be difficult to while X-direction and Y-direction both direction strain variation detection, particularly with sensor
It is more difficult to distinguish for array.
Content of the invention
For above-mentioned technical problem, the present invention provides a kind of Graphene strain transducer array, can examine simultaneously
Survey horizontal and vertical（I.e. X to and Y-direction）The strain variation of both direction.
In order to solve above-mentioned technical problem, the technical solution used in the present invention is：A kind of Graphene strain transducer array,
Including the array circuit of arrangement on array circuit plate and array circuit plate, described array circuit plate is provided with some and array
The Graphene strain sensing unit that circuit connects；Described Graphene strain sensing unit relies on signals collecting and processing system will adopt
Collect signal and be converted to strain value；Described Graphene strain sensing unit includes the sensor film of two pieces of arranged crosswise in length and breadth, should
Sensor film is composited by graphene layer and elastomeric polymer layer；Described sensor film two ends are provided with electrode.
Improve as a kind of, described array circuit plate upper surface has hollow hole；Described Graphene strain sensing unit with
Array circuit plate is fitted, and by described hollow out maskaperture mask.Setting hollow hole below Graphene strain sensing unit is so that sense
The bigger strain space of thin film tool, on the premise of improve sensor film strain limit, improves the range of sensor.
As one kind preferably, described hollow hole is located at Graphene strain sensing unit middle, and its area should for Graphene
Become the 25% ~ 81% of sensing unit area, the sensitivity of Graphene strain transducer can be improved.
As one kind preferably, Graphene strain sensing unit can form 1 × 1～100 × 100 array, each Graphene
A length of 1mm～20mm of strain sensing unit, a width of 1mm～20mm.
Improve as a kind of, described sensor film has graphene layer one side and has some micro nano structures.This micro-nano knot
Structure is to arrange some depressions in resilient polymeric surface, and graphene layer is laid in resilient polymeric surface along depression.This micro-
Nanostructured allows thin film produce certain fold back effect, increased the pliability of thin film.
As one kind preferably, described elastomeric polymer layer is by polydimethylsiloxane or polyurethane rubber or organosilicon
One of rubber manufactures；The thickness of described elastomeric polymer layer is 10 ~ 500 um.
Preferably graphene layer is three-dimensional grapheme nm wall or graphene microchip as a kind of, its thickness be 20nm ~
2um.
Improve as a kind of, described array circuit includes longitudinal circuit and transverse circuit, be distributed in the strain of each Graphene
Between sensing unit, it is connected with each Graphene strain sensing unit two ends；And control Graphene strain to pass by analog switch
The gating of sense unit.It is easy to connect up, reduce the volume of circuit board.In addition increase analog switch with to each Graphene strain sensing
Unit is optionally opened and closed.
Improve as a kind of, described two pieces of sensor films are rectangle equal in magnitude, and it is mutually perpendicular to and mutual in central point
Arranged crosswise.So that strain sensing unit has identical sensed parameter horizontal and vertical.
The invention has benefit that：There is the Graphene strain transducer array of said structure, can sense simultaneously
Horizontal and vertical strain variation, greatly expands the range of application of sensor array so that Graphene strain transducer has
The development of more diversification.
Brief description
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the structural representation of Graphene strain sensing unit.
Fig. 3 is the A-A sectional view of Graphene strain sensing unit.
Fig. 4 is the structural representation of sensor film.
Fig. 5 is the structural representation of the sensor film with micro nano structure.
In figure labelling：1 array circuit plate, 2 Graphene strain sensing units, 3 array circuits, 21 hollow holes, 22 sensings are thin
Film, 23 electrodes, 221 three-dimensional grapheme nm walls, 222 elastomeric polymer layer.
Specific embodiment
Below in conjunction with the accompanying drawings, the present invention is described in detail.
In order that the objects, technical solutions and advantages of the present invention become more apparent, below in conjunction with drawings and Examples, right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only in order to explain the present invention, and
It is not used in the restriction present invention.
As shown in Figures 1 to 5, the present invention includes a kind of Graphene strain transducer array, including array circuit plate 1 and
On array circuit plate 1, the array circuit 3 of arrangement, described array circuit plate 1 is provided with some graphite being connected with array circuit 3
Alkene strain sensing unit 2；Described Graphene strain sensing unit 2 relies on signals collecting and processing system will collect signal conversion
For strain value.Described Graphene strain sensing unit 2 includes the sensor film 22 of two pieces of arranged crosswise in length and breadth, this sensor film 22
It is composited by graphene layer and elastomeric polymer layer 222；Described sensor film 22 two ends are provided with electrode 23.Best two pieces of senses
Thin film 22 is answered to be rectangle equal in magnitude, it is mutually perpendicular to and intersects arrangement in central point.Array circuit plate 1 upper surface has
Hollow hole 21；Described Graphene strain sensing unit 2 is fitted with array circuit plate 1, and described hollow hole 21 is covered.Hollow hole
21 hit exactly positioned at Graphene strain sensing unit 2, and its area is the 25% ~ 81% of Graphene strain sensing unit 2 area, preferably
64%.Sensor film 21 has graphene layer one side and has some micro nano structures.This micro nano structure is in resilient polymeric surface
Some depressions are set, and graphene layer is laid in resilient polymeric surface along depression.Elastomeric polymer layer 222 is by poly dimethyl silicon
Oxygen alkane or one of polyurethane rubber or organic silicon rubber manufacture；The thickness of described elastomeric polymer layer 222 is 10-
500 um.Graphene layer is three-dimensional grapheme nm wall 211 or graphene microchip, and its thickness is 20nm-2um.Array circuit 5
Including longitudinal circuit and transverse circuit, it is distributed between each Graphene strain sensing unit 2, with each Graphene strain sensing
Unit 2 two ends connect；And control the gating of Graphene strain sensing unit 2 by analog switch.Array circuit plate 1 can be selected
Flexible PCB or rigid circuit board.
Graphene strain sensing unit 2 can form 1 × 1～100 × 100 array.Each Graphene strain sensing unit 2
A length of 1mm～20mm, a width of 1mm～20mm.Hollow hole 23 is located at Graphene strain sensing unit and hits exactly, and its area is graphite
The 25 ~ 81% of alkene strain sensing cellar area.
In signals collecting and processing system 3, signals collecting frequency is 1～50Hz.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.
Claims (9)
1. a kind of Graphene strain transducer array, including the array circuit of arrangement on array circuit plate and array circuit plate,
Some Graphene strain sensing units being connected with array circuit are provided with described array circuit plate；Described Graphene strain passes
Sense unit relies on signals collecting and processing system will collect signal and be converted to strain value；It is characterized in that：Described Graphene should
Become the sensor film that sensing unit includes two pieces of arranged crosswise in length and breadth, this sensor film is multiple by graphene layer and elastomeric polymer layer
Conjunction forms；Described sensor film two ends are provided with electrode.
2. a kind of Graphene strain transducer array according to claim 1 it is characterised in that：On described array circuit plate
Surface has hollow hole；Described Graphene strain sensing unit is fitted with array circuit plate, and by described hollow out maskaperture mask.
3. a kind of Graphene strain transducer array according to claim 2 it is characterised in that：Described hollow hole is located at stone
Black alkene strain sensing unit middle, its area is the 25 ~ 81% of Graphene strain sensing cellar area.
4. a kind of Graphene strain transducer array according to claim 2, Graphene strain sensing unit can form 1 ×
1～100 × 100 array, a length of 1mm～20mm of each Graphene strain sensing unit, a width of 1mm～20mm.
5. a kind of Graphene strain transducer array according to claim 1 it is characterised in that：Described sensor film has
Graphene layer one side has some micro nano structures.
6. a kind of Graphene strain transducer array according to claim 1 it is characterised in that：Described elastomeric polymer
Layer is manufactured by polydimethylsiloxane or one of polyurethane rubber or organic silicon rubber；Described elastomeric polymer layer
Thickness is 10-500 um.
7. a kind of Graphene strain transducer array according to claim 1 it is characterised in that：Described graphene layer is three
Wei Shimoxina meter Qiang or graphene microchip, its thickness is 20nm-2um.
8. a kind of Graphene strain transducer array according to claim 1 it is characterised in that：Described array circuit includes
Longitudinal circuit and transverse circuit, are distributed between each Graphene strain sensing unit, with each Graphene strain sensing unit
Two ends connect；And control the gating of Graphene strain sensing unit by analog switch.
9. a kind of Graphene strain transducer array according to claim 1 it is characterised in that：Described two pieces of sensor films
For rectangle equal in magnitude, it is mutually perpendicular to and intersects arrangement in central point.
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| CN201610860811.8A CN106468533A (en) | 2016-09-29 | 2016-09-29 | A kind of Graphene strain transducer array |
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Cited By (6)
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| CN107167070A (en) * | 2017-06-26 | 2017-09-15 | 厦门大学 | A kind of resistance strain sensor and its manufacture method |
| CN107271084A (en) * | 2017-06-22 | 2017-10-20 | 五邑大学 | A kind of flexibility stress sensor and preparation method thereof |
| CN108489377A (en) * | 2018-03-25 | 2018-09-04 | 苏州科技大学 | More physics quantity detection sensors based on graphene and strain transducer |
| CN109068484A (en) * | 2018-10-25 | 2018-12-21 | 中国船舶科学研究中心（中国船舶重工集团公司第七0二研究所） | A kind of sensor array of complicated interface pressure fluctuations beneath turbulent boundary lay test |
| CN110044523A (en) * | 2019-05-27 | 2019-07-23 | 清华大学深圳研究生院 | A kind of texture recognition array of pressure sensors and preparation method thereof |
| CN114076564A (en) * | 2020-08-20 | 2022-02-22 | 广州市香港科大霍英东研究院 | Strain sensor array based on negative Poisson ratio structure and preparation method and application thereof |
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| CN203629725U (en) * | 2013-12-21 | 2014-06-04 | 华中科技大学 | MEMS pressure sensor based on graphene |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107271084A (en) * | 2017-06-22 | 2017-10-20 | 五邑大学 | A kind of flexibility stress sensor and preparation method thereof |
| CN107167070A (en) * | 2017-06-26 | 2017-09-15 | 厦门大学 | A kind of resistance strain sensor and its manufacture method |
| CN108489377A (en) * | 2018-03-25 | 2018-09-04 | 苏州科技大学 | More physics quantity detection sensors based on graphene and strain transducer |
| CN108489377B (en) * | 2018-03-25 | 2024-03-08 | 苏州科技大学 | Graphene-based multi-physical-quantity detection sensor and strain sensor |
| CN109068484A (en) * | 2018-10-25 | 2018-12-21 | 中国船舶科学研究中心（中国船舶重工集团公司第七0二研究所） | A kind of sensor array of complicated interface pressure fluctuations beneath turbulent boundary lay test |
| CN109068484B (en) * | 2018-10-25 | 2019-08-27 | 中国船舶科学研究中心（中国船舶重工集团公司第七0二研究所） | A kind of sensor array of complicated interface pressure fluctuations beneath turbulent boundary lay test |
| CN110044523A (en) * | 2019-05-27 | 2019-07-23 | 清华大学深圳研究生院 | A kind of texture recognition array of pressure sensors and preparation method thereof |
| CN114076564A (en) * | 2020-08-20 | 2022-02-22 | 广州市香港科大霍英东研究院 | Strain sensor array based on negative Poisson ratio structure and preparation method and application thereof |
| CN114076564B (en) * | 2020-08-20 | 2024-02-20 | 广州市香港科大霍英东研究院 | Strain sensor array based on negative poisson ratio structure and preparation method and application thereof |
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Application publication date: 20170301 |