CN106449621A - LED (light emitting diode) encapsulation method and structure thereof - Google Patents
LED (light emitting diode) encapsulation method and structure thereof Download PDFInfo
- Publication number
- CN106449621A CN106449621A CN201610899688.0A CN201610899688A CN106449621A CN 106449621 A CN106449621 A CN 106449621A CN 201610899688 A CN201610899688 A CN 201610899688A CN 106449621 A CN106449621 A CN 106449621A
- Authority
- CN
- China
- Prior art keywords
- led
- top surface
- led chip
- glue
- reflective glue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
The invention discloses an LED (light emitting diode) encapsulation method and a structure thereof. The method comprises the following steps of S1, fixing a plurality of LED chips onto the top surface of a base plate; S2, filling reflecting glue in a gap formed between LED chips on the base plate, wherein the reflecting glue is lower than the height of the LED chip; S3, performing centrifugal rotation on the base plate in the located plane so that the reflecting glue completely covers the side walls of the LED chips; S4, coating fluorescence layers on the top surfaces of the LED chips and the top surfaces of the reflecting glue. The method and the structure have the advantages that the reflecting glue is filled in the gap between the adjacent LED chips, and the centrifugal rotation treatment is performed so that the reflecting glue completely covers the side walls of the LED chips; the light outlet angle consistency and the light out rate of the LED chips are improved.
Description
Technical field
The present invention relates to LED technology, more particularly, to LED encapsulation method and its structure.
Background technology
LED (light emitting diode) encapsulation refers to the encapsulation of luminescence chip, and comparing integrated antenna package has relatively big difference.LED
Encapsulation do not require nothing more than and can protect wick, but also will being capable of printing opacity.So the encapsulation of LED has special wanting to encapsulating material
Ask.In general, the function of encapsulation is to provide chip enough protections, prevents chip from exposing for a long time in atmosphere or machinery damage
Hinder and lost efficacy, to improve the stability of chip；LED is encapsulated in addition it is also necessary to have good light extraction efficiency and good radiating
Property, good encapsulation can allow LED possess more preferable luminous efficiency and heat dissipation environment, and then lifts the life-span of LED.
Existing LED encapsulation structure can fill white reflection insulant in the surrounding of chip, to improve light emission rate, to light
Angle agreement and surface smoothness.When filling reflective insulant in existing LED encapsulation technology space between the chips,
Mostly be directly to fill up packing material, then wipe unnecessary material off, such encapsulating structure be easily caused filling uneven, and
Waste of materials.
Content of the invention
In order to overcome the deficiencies in the prior art, an object of the present invention is to provide a kind of LED encapsulation method, and it can solve
Certainly LED encapsulation structure light emission rate and the inconsistent problem of rising angle.
The second object of the present invention is to provide a kind of LED encapsulation structure, and it can solve LED encapsulation structure light emission rate and go out
The inconsistent problem of angular.
An object of the present invention employs the following technical solutions realization：
A kind of LED encapsulation method, comprises the steps：
S1, several LED chips are fixed on the top surface of substrate；
S2, fill reflective glue in the space between the LED chip on substrate, the height of reflective glue is less than LED chip
Highly；
Carry out centrifugal rotation, so that the side wall of LED chip is covered by reflective glue completely in S3, the plane that substrate is located at it
Lid；
The top surface coating fluorescence coating of S4, the top surface in LED chip and reflective glue.
Preferably, also comprising the steps after S4：S5, armor coated in the top surface of fluorescence coating.
Preferably, also comprising the steps after S3：
S30, the reflective glue of LED chip top surface is carried out plane polishing, so that the top surface of LED chip exposes.
Preferably, described protective layer is coated on the top surface of fluorescence coating by spin-coating method or die pressing.
Preferably, described fluorescence coating is coated on the top surface of LED chip and the top of reflective glue by spin-coating method or spraying process
Face.
Preferably, the reflective glue in S2 is less than 3/4ths of the height of LED chip, and the height higher than LED chip
A quarter.
The second object of the present invention employs the following technical solutions realization：
A kind of LED encapsulation structure, is made up of LED encapsulation method, including protective layer, fluorescence coating, several LED chips and base
Plate；Several LED chips are fixed on the top surface of substrate, the side wall of each LED chip is equipped with its side wall is completely covered
Reflective glue, fluorescence coating is coated on the top surface of several LED chips and the top surface of reflective glue.
Preferably, protective layer is coated on the top surface of fluorescence coating.
Preferably, reflective glue is not less than 80% to the reflectance of visible ray.
Preferably, described fluorescence coating is made up of fluorescent material and silica gel；Described protective layer is layer of silica gel.
Compared to existing technology, the beneficial effects of the present invention is：By filling between the space between adjacent LED chip
Reflective glue, and centrifugal rotation process reflective glue is completely covered on the side wall of LED chip, improve going out of LED chip
Angular concordance and light emission rate.
Brief description
Fig. 1 is the flow chart of the LED encapsulation method of the present invention；
Fig. 2 is the schematic cross-section of the embodiment one of LED encapsulation structure of the present invention；
Fig. 3 is the schematic cross-section of the embodiment two of LED encapsulation structure of the present invention.
In figure：10th, protective layer；20th, fluorescence coating；30th, reflective glue；40th, LED chip；50th, substrate.
Specific embodiment
Below, in conjunction with accompanying drawing and specific embodiment, the present invention is described further：
A kind of LED encapsulation method, as shown in figure 1, comprise the steps：
Step 01, several LED chips are fixed on the top surface of substrate；
Described LED chip is flip LED chips；Described substrate is ceramic wafer, aluminium sheet, copper coin or alloy sheets.
Step 02, fill reflective glue in the space between the LED chip on substrate；The height of described reflective glue is less than
The height of LED chip, and 3/4ths of the height higher than LED chip, or 3/4ths and height of the height less than LED chip
A quarter in the height of LED chip.It should be noted that the height of reflective glue mentioned here, refer to be centrifuged
The height of the top surface of reflective glue of rotation；And after centrifugal rotation, the side wall of LED chip will be covered by reflective glue completely
Lid, now the height of the top surface of reflective glue may be inconsistent, and the average height of the top surface of reflective glue is still below the height of LED chip
Degree.
Carry out centrifugal rotation, so that reflective glue will be complete for the side wall of LED chip in step 03, the plane that substrate is located at it
All standing；
In the present embodiment, substrate is positioned over angle perpendicular to the ground and carries out centrifugal rotation.Described reflective glue is exhausted
The reflective glue of edge, reflective glue is white reflection glue；Reflective glue can be simple substance or mixture；Reflective glue is to visible ray
Reflectance is more than 80%.
The top surface coating fluorescence coating of step 04, the top surface in LED chip and reflective glue；
Described fluorescence coating is made up of fluorescent material and being sufficiently mixed of silica gel；Fluorescence coating is coated on by spin-coating method or spraying process
The top surface of LED chip and the top surface of reflective glue.
Step 05, armor coated in the top surface of fluorescence coating；
Described protective layer is silica gel, and protective layer is coated on the top surface of fluorescence coating by spin-coating method or die pressing.
Further, include step 04 before step 030 after step 03 and also；
Step 030：The reflective glue of LED chip top surface is carried out plane polishing, so that the top surface of LED chip exposes；
When centrifugal treating is carried out to substrate, have the top surface that reflective glue moves to LED chip unavoidably, the top to LED chip
The reflective glue in face carries out plane polishing, so that the top surface of LED chip exposes, LED chip can be made preferably luminous.
A kind of LED encapsulation structure, is made up of LED encapsulation method, embodiment one：
As shown in Fig. 2 including protective layer 10, fluorescence coating 20, luminescent layer and the substrate 50 setting gradually from top to bottom；Luminous
Layer includes several LED chips 40.
Several LED chips 40 are fixed on the top surface of substrate 50, fill anti-in the space between adjacent LED chip 40
Optical cement 30, reflective glue 30 is higher than 3/4ths and the height less than LED chip 40 of the height of LED chip 40；Substrate 50 is existed
Carry out centrifugal rotation, so that the side wall of LED chip 40 is completely covered by reflective glue 30 in its plane being located.
Covered by white reflective glue 30 on the side wall of LED chip 40, LED chip 40 when luminous, reflective glue 30
LED chip 40 side wall issued light can be reflected back, so that the rising angle of LED chip 40 has concordance, improve
The light emission rate of LED chip 40, the space around LED chip 40 filled up by reflective glue 30, makes the surface of LED encapsulation structure more flat
Whole.And the reflective glue 30 through centrifugal treating fills evenly.
Fluorescence coating 20 is coated on the top surface of LED chip 40 and the top surface of reflective glue 30；Protective layer 10 is coated on fluorescence coating 20
Top surface.
Described LED chip 40 is flip LED chips；Described substrate 50 is ceramic wafer, aluminium sheet, copper coin or alloy sheets.Described
Reflective glue 30 is the reflective glue that insulate, and reflective glue 30 is white reflection glue；Reflective glue 30 can be simple substance or mixture；
Reflective glue 30 is not less than 80% to the reflectance of visible ray.Described fluorescence coating 20 is made up of fluorescent material and being sufficiently mixed of silica gel；
Fluorescence coating 20 is coated on the top surface of LED chip 40 and the top surface of reflective glue 30 by spin-coating method or spraying process.Described protective layer 10
For layer of silica gel, protective layer 10 is coated on the top surface of fluorescence coating 20 by spin-coating method or die pressing.
Embodiment two：
As shown in figure 3, the difference of the embodiment two of LED encapsulation structure and embodiment one is, reflective glue 30 is higher than LED
The a quarter of the height of chip 40, and 3/4ths of the height less than LED chip 40；
The usage amount of reflective glue 30 is less compared with embodiment one, and, after centrifugal rotation process, reflective glue 30 is complete for substrate 50
It is covered on the side wall of LED chip 40；The top surface of the reflective glue 30 between adjacent LED chip 40 forms a concave surface.
Reflective glue 30 usage amount of embodiment two is less, more cost-effective.
The substrate 50 of the LED encapsulation structure of the present invention is the large substrates comprising several LED chips 40, LED encapsulation structure
Cutting can be carried out separate, several LED chips 40 form single LED packaging respectively.
It will be apparent to those skilled in the art that can technical scheme as described above and design, make other various
Corresponding change and deformation, and all these change and deformation all should belong to the protection domain of the claims in the present invention
Within.
Claims (10)
1. a kind of LED encapsulation method is it is characterised in that comprise the steps：
S1, several LED chips are fixed on the top surface of substrate；
S2, fill reflective glue in the space between the LED chip on substrate, reflective glue is less than the height of LED chip；
Carry out centrifugal rotation, so that the side wall of LED chip is completely covered by reflective glue in S3, the plane that substrate is located at it；
The top surface coating fluorescence coating of S4, the top surface in LED chip and reflective glue.
2. LED encapsulation method as claimed in claim 1 is it is characterised in that also comprise the steps after S4：
S5, armor coated in the top surface of fluorescence coating.
3. LED encapsulation method as claimed in claim 1 is it is characterised in that also comprise the steps after S3：
S30, the reflective glue of LED chip top surface is carried out plane polishing, so that the top surface of LED chip exposes.
4. LED encapsulation method as claimed in claim 1 is it is characterised in that described protective layer passes through spin-coating method or die pressing applies
It is overlying on the top surface of fluorescence coating.
5. LED encapsulation method as claimed in claim 1 is it is characterised in that described fluorescence coating passes through spin-coating method or spraying process applies
It is overlying on the top surface of LED chip and the top surface of reflective glue.
6. LED encapsulation method as claimed in claim 1 is it is characterised in that the reflective glue in S2 is less than the height of LED chip
3/4ths, and a quarter of the height higher than LED chip.
7. a kind of LED encapsulation structure, the LED encapsulation method described in any one of claim 1 to 6 is made it is characterised in that wrapping
Include protective layer, fluorescence coating, several LED chips and substrate；Several LED chips are fixed on the top surface of substrate, each LED chip
Side wall on be equipped with the reflective glue that its side wall is completely covered, fluorescence coating is coated on the top surface of several LED chips and reflective
The top surface of glue.
8. it is characterised in that also including protective layer, protective layer is coated on fluorescence coating to LED encapsulation structure as claimed in claim 7
Top surface.
9. LED encapsulation structure as claimed in claim 7 is it is characterised in that reflective glue is not less than to the reflectance of visible ray
80%.
10. LED encapsulation structure as claimed in claim 8 is it is characterised in that after described fluorescence coating mixes by fluorescent material and silica gel
Formed；Described protective layer is layer of silica gel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610899688.0A CN106449621A (en) | 2016-10-14 | 2016-10-14 | LED (light emitting diode) encapsulation method and structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610899688.0A CN106449621A (en) | 2016-10-14 | 2016-10-14 | LED (light emitting diode) encapsulation method and structure thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106449621A true CN106449621A (en) | 2017-02-22 |
Family
ID=58174469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610899688.0A Pending CN106449621A (en) | 2016-10-14 | 2016-10-14 | LED (light emitting diode) encapsulation method and structure thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106449621A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108681118A (en) * | 2018-05-18 | 2018-10-19 | 武汉华星光电技术有限公司 | Liquid crystal display |
| CN113161465A (en) * | 2021-05-11 | 2021-07-23 | 安徽芯瑞达科技股份有限公司 | Manufacturing method of LED Chip packaging device based on Flip Chip |
| WO2021227352A1 (en) * | 2020-05-13 | 2021-11-18 | 深圳市洲明科技股份有限公司 | Led display module, led display screen, and manufacturing method for led display module |
| CN117497525A (en) * | 2023-12-28 | 2024-02-02 | 江西晶亮光电科技协同创新有限公司 | Polycrystalline light emitting device and method of manufacturing the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101136447A (en) * | 2006-08-31 | 2008-03-05 | 株式会社东芝 | Semiconductor light emitting device |
| CN102683542A (en) * | 2011-03-15 | 2012-09-19 | 展晶科技(深圳)有限公司 | Led packaging structure |
| CN104916763A (en) * | 2015-05-29 | 2015-09-16 | 广州市鸿利光电股份有限公司 | Packaging method for chip scale packaging LED |
| JP2016072412A (en) * | 2014-09-30 | 2016-05-09 | 日亜化学工業株式会社 | Light-emitting device and method of manufacturing light-emitting device |
-
2016
- 2016-10-14 CN CN201610899688.0A patent/CN106449621A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101136447A (en) * | 2006-08-31 | 2008-03-05 | 株式会社东芝 | Semiconductor light emitting device |
| CN102683542A (en) * | 2011-03-15 | 2012-09-19 | 展晶科技(深圳)有限公司 | Led packaging structure |
| JP2016072412A (en) * | 2014-09-30 | 2016-05-09 | 日亜化学工業株式会社 | Light-emitting device and method of manufacturing light-emitting device |
| CN104916763A (en) * | 2015-05-29 | 2015-09-16 | 广州市鸿利光电股份有限公司 | Packaging method for chip scale packaging LED |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108681118A (en) * | 2018-05-18 | 2018-10-19 | 武汉华星光电技术有限公司 | Liquid crystal display |
| WO2021227352A1 (en) * | 2020-05-13 | 2021-11-18 | 深圳市洲明科技股份有限公司 | Led display module, led display screen, and manufacturing method for led display module |
| CN113161465A (en) * | 2021-05-11 | 2021-07-23 | 安徽芯瑞达科技股份有限公司 | Manufacturing method of LED Chip packaging device based on Flip Chip |
| CN117497525A (en) * | 2023-12-28 | 2024-02-02 | 江西晶亮光电科技协同创新有限公司 | Polycrystalline light emitting device and method of manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104733597B (en) | Luminescent device and its manufacturing method | |
| JP5289835B2 (en) | Light emitting device and manufacturing method thereof | |
| CN106449621A (en) | LED (light emitting diode) encapsulation method and structure thereof | |
| JP2008218511A (en) | Semiconductor light emitting device and method formanufacturing the same | |
| TWI648880B (en) | Method of forming a light emitting device | |
| US20130233710A1 (en) | Method of manufacturing light emitting diode packaging lens and light emmiting diode package | |
| CN107665940A (en) | Light-emitting device and its manufacture method | |
| JP2011082488A (en) | Light-emitting diode and method of manufacturing the same | |
| JP6065408B2 (en) | Light emitting device and manufacturing method thereof | |
| TWI441359B (en) | Light-emitting diode packaging structure of low angular correlated color temperature deviation | |
| JP5690871B2 (en) | Light emitting device and manufacturing method thereof | |
| US10797203B2 (en) | Light-emitting device and method for manufacturing the light-emitting device having a first dielectric multilayer film arranged on the side surface of the light emitting element | |
| CN105514252B (en) | Light emitting diode, packaging part and manufacture method | |
| US8193551B2 (en) | LED packaging structure and fabricating method thereof | |
| CN105895781A (en) | Package structure and package method of blue-light LED flip chip | |
| CN103515511B (en) | Package structure for LED and method for packing thereof | |
| CN104183682A (en) | Flip-chip light-emitting diode element and packaging structure thereof | |
| CN103618041B (en) | A kind of LED encapsulation structure of esd protection and method for packing thereof | |
| JP2001085747A (en) | Semiconductor light-emitting device | |
| CN102280553A (en) | Flip-chip light emitting diode crystal grain and crystal grain array thereof | |
| CN206225361U (en) | A kind of LED encapsulation structure | |
| CN102456808A (en) | Light-emitting diode packaging structure | |
| CN109585630A (en) | LED encapsulation structure and preparation method thereof and LED light | |
| TWI464922B (en) | High power light emitting device | |
| TWI453957B (en) | Light emitting diode package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170222 |