CN106449526B - Power semiconductor modular with improved sealing - Google Patents

Power semiconductor modular with improved sealing Download PDF

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Publication number
CN106449526B
CN106449526B CN201610519975.4A CN201610519975A CN106449526B CN 106449526 B CN106449526 B CN 106449526B CN 201610519975 A CN201610519975 A CN 201610519975A CN 106449526 B CN106449526 B CN 106449526B
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China
Prior art keywords
layer
connecting element
hull outside
shell
hole
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CN201610519975.4A
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CN106449526A (en
Inventor
S·施瓦策尔
M·布施屈勒
U·M·G·施瓦策尔
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Infineon Technologies AG
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Infineon Technologies AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

The present invention relates to a kind of power semiconductor modulars, comprising: substrate, for being fixed at cooling body with heat conduction；At least one semiconductor subassembly, arrangement is on substrate；At least one connecting element, conductively connect with semiconductor subassembly, and connecting element has contact section in its free end；The shell of electrical isolation wherein at least partly accommodates substrate and at least one semiconductor subassembly, and shell has at least one through-hole for connecting element；Wherein at least one connecting element is arranged to extend through through-hole, and is wherein provided in hull outside adjacent with hull outside and surrounds the layer of connecting element, and layer is made of the plasticity compared with case material or elastically-deformable material；Wherein contact section is arranged as beyond layer and hull outside.

Description

Power semiconductor modular with improved sealing
Background technique
The present invention relates to power semiconductor modulars.Power semiconductor modular is used in the semiconductor in power electronic circuit Component group.Power semiconductor modular is commonly used in vehicle, solar energy and industrial application, such as inverter and rectifier.Include Semiconductor subassembly in power semiconductor modular be usually IGBT (insulated gate bipolar transistor)-semiconductor chip or MOSFET (metal oxide semiconductor field effect tube)-semiconductor chip.IGBT- and MOSFET- semiconductor chip has variation Voltage rating and power.Some power semiconductor modulars also have additional half for overvoltage protection in semiconductor packages Conductor diode (that is, freewheeling diode)
For high power applications, power semiconductor modular usually has the multiple semiconductor groups being integrated on single substrate Part.Substrate generally includes ceramic substrate, such as Al2O3,AlN,Si3N4Or other suitable materials, by semiconductor subassembly electricity Insulation.At least upside of ceramic substrate or golden by Cu pure or by plating, Al or other suitable materials Belong to coating, to provide contact electrically and mechanically for semiconductor subassembly.Metal layer is usually applied by direct copper method (DCB), directly Aluminium method (DAB) or Active Metals welding (AMB) and be bonded to ceramic substrate.
In order to protect semiconductor subassembly, usually semiconductor subassembly is placed in the dielectric housings being made of plastics, Such as be configured to cheese and be upside down in semiconductor subassembly and its substrate, with by metal, substrate supports, use The circuit board at cooling body is set in thermally conductive mounting portion closing, so that semiconductor subassembly is disposed in domed shell restriction Cavity volume in.Attempt the seal construction of realization shell.
Wherein the problem of, is electrical connecting element, must be exported by the through-hole of shell, because it has arrangement Hull outside be used for be in electrical contact and (if applicable) at the same the contact section being mechanically fixed.Connecting element is typically constructed At metal forming part.Connecting element is in the other end and the contact surface conduction for arranging semiconductor subassembly and/or substrate in the module Connection, such as contacted by Plug contact or spring, or pass through welding.
In order in the semiconductor subassembly of protection arrangement in the module, and in order to ensure enough electrical isolations, component is (especially It is semiconductor subassembly) it is coated over by soft casting glue (for example, Silica hydrogel, belongs to the group of the two-component silicone elastomer of cold cure) In shell and thus it is protected.For this purpose, module is for example filled using Silica hydrogel in the last of manufacturing process.However, moisture or Corrosive gas is possibly into shell, and in spite of Silica hydrogel, but moisture or corrosive gas may still advance to semiconductor group Part simultaneously causes undesirable chemical reaction with semiconductor subassembly or at semiconductor subassembly.
In order to gas-tight seal, for example additional epoxy resin layer can be quoted in the housing, surround Silica hydrogel and by position Component seal in bottom.
In 10 2,011 056 848 A1 of disclosure DE 10 2,008 045 721 A1 and DE in the following way It solves the problems, such as that moisture enters shell, i.e., additional sealing device is provided in the through-hole provided for electrical connecting element.It is adjoint These be the through-hole that provides of electrical connecting element, for these hermetically sealed through-holes, there are also problems, these through-holes are in module It is provided in installation, such as these through-holes typically occur in the case where inside modules are perfused using Silica hydrogel.
Summary of the invention
It is an object of the invention to realize a kind of power semiconductor modular, wherein make power electronic component effectively from The adverse effect of moisture simultaneously has relatively low production cost, while the problem of avoid above mentioned isolated failure.This One purpose is realized by power semiconductor modular according to claim 1.Equally advantageous assemble method is the method power of subordinate The theme that benefit requires.It should be recognized that the feature individually listed in the claims can be with any technical significant side Formula is combined each other and forms other embodiment of the present invention.Specification additionally especially shows the present invention with attached drawing in combination Feature and the present invention is described.
The present invention relates to power semiconductor modulars, hereinafter referred to as module.The module of the invention has fixes with heat conduction To the substrate of cooling body, for example, ceramic substrate, for example, Al2O3,AlN,Si3N4。
Preferably, module includes metal plate, is provided with the flat surfaces for installation into cooling body.In addition metal plate has There are for example one or more through-holes for screw stays to cooling body.For example, ceramic substrate recited above is metal coating And with metal plate welding.
Power semiconductor modular has at least one semiconductor subassembly of arrangement on substrate.This is for example related to semiconductor and opens Close, as IGBT, MOSFET or diode, or combinations thereof.It is preferably provided with multiple semiconductor subassemblies, such as two or three Semiconductor subassembly.
According to the present invention, the connecting element that there is module at least one to be conductively connected with semiconductor subassembly.According to the present invention, Connecting element has contact section.Preferably, contact section, which is configured such that, is welded in board pads.For example, the company Socket part section is metal forming part, for example, being substantially made of copper.Contact section is for example configured to pin-shaped.
The concept for contacting section is extensive interpretation, and is related generally at least one semiconductor subassembly and under The electric conductor of electric current and/or power is provided between the outside for the shell that face is explained.According to the functional design of semiconductor subassembly, even Socket part section is related to load connecting element or control connecting element, wherein usually but it is not necessary to ground, according to current loading come table Show the different structure designs of connecting element involved in (impliziert).
Preferably, the representation of concept of connecting element, related control connecting element and existing load connection member are controlled The difference of part is at least that have lesser conductive section.
According to the present invention, be provided with substrate and at least one semiconductor subassembly at least partly, be provided, preferably entirely at Electric isolution shell therein.The meaning of " electric isolution " of the invention is that the material composition of shell has specifically greater than 1010Ω· The resistance of cm.Preferably, material also has the dielectric strength greater than 1kV/mm, more preferably of more than 10kV/mm.Preferably, Material has lower water imbibition.For example, case material is related to thermoplastic materials, the preferably thermoplastic materials of glass fibre reinforcement.
According to the present invention, there is shell at least one to be used for the through-hole of connecting element.Preferably, shell is arranged in through-hole Upside wherein refers on the upside of shell, and for adjacent device, the opposite side of scheduled module side at cooling body. Here, the upside that " upside " should not be interpreted as the shell in the case where desired use of module restrictively must in gravitational field It must be upward, but can be randomly oriented according to the present invention.For example, being provided with round or slot-shaped cross sectional logical Hole.For example, through-hole has sleeve shaped extension, it extend into the cavity volume limited by shell, that is, the inside of shell.
According to the present invention, at least one connecting element is arranged to through through-hole.It can shape-ordinatedly be contained in logical Kong Zhong.Preferably, there are gaps between connecting element and the wall of through-hole.Preferably, gap is less than 0.25mm, more preferably Less than 0.15mm.
According to the present invention, layer that is adjacent with hull outside and surrounding connecting element, the layer are provided on the outside of shell It is made of the plasticity compared with case material or elastic deformation material.It is preferably at least suitable for being designed to semiconductor group Certain temperature range of the operation of part, for example, being suitable for -10 DEG C to 150 DEG C of temperature.
Plasticity or elasticity can deformation behavior difference for example respectively according to DIN EN ISO 868, DIN ISO 7619-1 or ASTM D2240 is determined.
For example, the material of layer is related to thermoplastic materials, such as polyester, polyformaldehyde, polyethylene, polypropylene, polyamide, poly- terephthaldehyde Sour butanediol ester, acronitrile-butadiene-styrene, polymethyl methacrylate, polystyrene, polyvinyl chloride, polycarbonate, benzene Ethylene-propylene lonitrile copolymer, polyphenylene oxide or their combination.
For example, the material of shell also relates to thermoplastic materials, preferably it is made of the thermoplastic materials that glass fibre is reinforced.With shell Thermoplastic materials compare, this with stronger plasticity or elasticity can deformation behavior layer for example by specific thermoplastic materials and/or related phase Caused by the selection for answering the difference (that is, in relation to glass fibre ratio) of plasticizer loading.
For example, it is related to elastomer in terms of layer material, and such as natural rubber, acrylonitrile-butadiene rubber, styrene-fourth two Alkene rubber, neoprene, butadiene rubber or EPDM rubber or their combination.
Preferably, it is related to having less than 65, even more preferably less than 60, more preferably less than 55 in terms of layer material, such as The elastomer or siloxanes of 50 Shore A hardness.
According to the present invention, wherein contact section is arranged so that it beyond layer and housing side, enable to for example with It is in electrical contact positioned at the conducting wire of outside namely hull outside.
The meaning of the arrangement surrounded in the present invention indicates, the embodiment of the present invention is embodied as, so that layer is around connection Element contact, and transition piece is completely coveredAnd between through-hole and connecting element there may be Gap.By this covering, the support of sealing or (if present) to existing sealing element is preferably implemented.
Compared with case material thus plasticity or elastically-deformable layer are used as the external covering of shell, according to the present invention, Connecting element is arranged to stretch out the layer.The additional external barrier of (if present) is formed as a result, prevents moisture or harmful gas Body enters enclosure interior namely inside modules.For example, prevent in this way by Silica hydrogel as soft encapsulating material The entrance of moisture in the case where the module of filling, this is that the relatively good wettability based on the material results in the full of moisture It is damaged until semiconductor subassembly, and thus with diffusion.Compared with shell, thus the layer in the hull outside is used as Harmful environmental gas or moisture barrier.
Preferably, be configured to around the surface of the hull outside of through-hole it is flat, to be arranged in the side of circuit board.
It is further preferable that be provided in the perimeter of shell unlimited (frei), it is beside first through hole and The consistent another parallel through-hole of shape, tegillum covering.Concept is " open " to indicate unfilled through-hole.For example, it is related to Used in the power semiconductor modular manufacturing process, as the through-hole of the filling opening for soft encapsulating glue material.It removes as a result, In the housing for the through-hole that production technology needs and is arranged other than, according to the present invention, the soft formation is effectively or with manufacture Economic mode additionally serves as sealing.
Preferably, the through-hole that multiple shapes are consistent, parallel is set in the housing, is then usually arranged to rule Grid.This shell, which provides, meets the excellent of versatility in the case where the high flexible arrangement for meeting connecting element at the same time Gesture, corresponding without shell specifically design and manufacture.It solves associated sealing by the layer of the disclosure as a result, to ask Topic, wherein layer is preferably designed so that it is arranged to all consistent through-holes of shape of covering.
For example, layer is applied to hull outside as occipitalia (Kissen).
For example, the layer bears heat shrinking step and punch steps, so that contact section pierces through the layer.
Preferably, the ingredient of this layer has at least one siloxanes, such as polysiloxanes, for example, at least cricoid, straight chain, Branch and/or the polysiloxanes of crosslinking.
Preferably, the ingredient of this layer has at least one polyimides, for example, polysuccinimide (PSI), poly bis Malaysia Acid imide (PBMI), polybenzimidazoles (PBI), poly- diimidazole (PBO), polyimide sulfones (PISO) and/or polymethyl acyl Imines (PMI), it is preferable that poly- (4,4'- oxygen diphenylenes-pyromellitic acid), such as at present with trade name " Kapton " by E.I.du Poly- (the 4,4'- oxygen diphenylene-pyromellitic acid) that Pont de Nemours and Company is sold.
Preferably, the ingredient of this layer at least has one or more polymer.
Preferably, which is made from a material that be electrically non-conductive.As non-conducting material, consider have greater than 1010The tool of Ω cm The material of bulk resistor.Preferably, the material for selecting layer in this way, so that it falls into according to DIN EN 60664-1 (VDE 0110- 1) in the grade of insulant, wherein relatively electric trace index (Pr ü fzahl der corresponding with IEC60112 Kriechwegbildung it) is determined under the determining solution A of application specification on test body.Relatively electric trace index CTI > 600 are classified material to the material for climbing electric conductivity according to electrical characteristics are climbed.
Layer is for example connect by shape or force-fitting with hull outside.Preferably, layer is attached to shell by adhesive At outside and/or connecting element.
In order to improve location accuracy in application and for its retentivity, layer is accommodated in the recess of hull outside In.
The invention further relates to a kind of devices comprising power semiconductor modular and circuit in mentioned-above embodiment Plate, also referred to as plate (Platine), wherein circuit board at least has conducting wire, conductively connected with contact section.By plasticity or bullet Layer made of the deformable material of property is preferably located between circuit board and hull outside, and is disposed adjacently with the two.Example Such as, circuit board is arranged in parallel, apart from the region that hull outside through-hole surrounds.Preferably, contact section and conducting wire weld. For example, contact section is arranged such that it through the pad of circuit board and and pad solder.For example, the layer is filled up completely circuit The cavity area formed between plate and adjacent hull outside region.
The invention further relates to a kind of methods using below step manufacture power semiconductor modelss.In preparation process, function Rate semiconductor module is provided with following feature.The module has the substrate for being fixed to cooling body with heat conduction.It is arranged in the lining At least one semiconductor subassembly on bottom.In addition, at least one conductively connect with the semiconductor subassembly have contact portion The connecting element of section.Module has the shell of electrical isolation, wherein at least partly accommodates substrate and at least one semiconductor group Part.At least one connecting element is arranged to the through-hole extended through in the housing and contacts section beyond the shell using it External side.For special characteristic, such as it is electrically insulated, with reference to aforementioned specification.
The inventive process provides time upper subsequent application steps, wherein being applied in hull outside and the shell External side is adjacent and surrounds the layer of the connecting element, and the layer is by the plasticity compared with case material or elastically-deformable material It is made.The layer is applied, so that contact section is arranged beyond the layer.
Such as by arranging connecting element with piercing through the layer, moldable or elastically-deformable layer is used compared with case material In the external sealing of shell.Thus it generates that (if present) is additional, external barrier, moisture or pernicious gas is prevented to enter Inside modules.For example, the entrance of the moisture in the module filled by Silica hydrogel as soft encapsulating material is prevented in this way, This is that the relatively good wettability based on the material causes the saturation of moisture and diffusion to be led until semiconductor subassembly, and thus Cause damages it.Compared with shell, thus the layer in the hull outside is used as the barrier of harmful environmental gas or moisture.
According to the preferred embodiment of method, applying step includes the thermal contraction process of layer and/or the punching course of layer, thus Contact section is each passed through the layer.For example, by means of toggle link punching press and until for contact section setting cavity or hole or The layer is pressed into module by the punch die (Stempel) complementally constructed with the hull outside of module, to realize so that contacting Section pierce through the layer and (if applicable) due to layer material plastic deformation and surrounded by the layer material.
In a preferred embodiment, apply such as layer made of siloxanes in the form of occipitalia.The occipitalia is used for another It is pierced in the design of designated position using contact section and is perforated (vergelocht).
According to the other preferred embodiment of method, provides and semiconductor module is utilized into wire arrangements by subsequent on the time On circuit boards the step of, middle layer are disposed between hull outside and circuit board.In a subsequent step, by weld come Conductive connection between manufacture contact section and circuit board.
Detailed description of the invention
The present invention will be described in detail by subsequent attached drawing, and attached drawing herein is exemplary only, to be only used for managing Solve and illustrate preferred embodiment.In the accompanying drawings:
Fig. 1 shows the side view of module according to an embodiment of the present invention；
Fig. 2 shows the front views of the module according to the present invention of Fig. 1；
Fig. 3 shows the module according to the present invention of Fig. 1 and the side view for the circuit board being disposed thereon；
Fig. 4 shows the top view of the module according to the present invention of Fig. 1；
Fig. 5 shows the solid of the punch die complementally formed with the hull outside of module, schematic illustration；
Fig. 6 shows the solid of module according to the present invention, schematic illustration；
Fig. 7 shows the punch die of module according to the present invention, the solid of layer, schematic illustration.
Specific embodiment
Fig. 1 shows the side view of module 1 according to an embodiment of the present invention, and Fig. 2 shows according to an embodiment of the present invention The front view of module 1.It is arranged through metal plate 13 for adjacent with the scheduled side of unshowned cooling body of module and limits It is fixed.Electrical isolation but thermally conductive ceramic substrate 2 are fixed on metal plate 13.The ceramic substrate 2 is the coating of two sides metal.Ceramics The metal coating setting of the side adjacent with metal plate of substrate 2 is used for the welding of ceramic substrate 2 and metal plate 13.Opposite , on the metal coating of ceramic side far from metal plate be provided with and electrically and/or mechanically contact, especially for 3 He of semiconductor subassembly Connecting element 7.For simplicity, in the schematic illustration, three semiconductor subassemblies 3 are exemplarily only shown.For The bonding wire 18 being arranged between connecting element 7 and semiconductor subassembly 3 being conductively connected, such as be made of copper or aluminium alloy, In Fig. 1 illustratively, schematically show.For the electrical isolation for mechanical protection and in order to protect semiconductor subassembly to exempt from By moisture and pernicious gas, the shell 5 made of fiber reinforcement type thermoplastic materials is set.
Three connecting elements 7 extend through in dielectric housings 5 belonging to through-hole 6, and so as to form contact section, At the pin-shaped outside beyond shell 5 (front is also referred to as hull outside).There is circular cross section simultaneously by the through-hole 6 on the upside of shell And it is respectively provided with the internal diameter greater than 4 outer diameter of pin-like contact section.Between contact section 4 and the shell 5 being electrically insulated caused by this way Gap be completely covered according to the present invention by layer 10 being applied in hull outside, with the fiber reinforcement type of shell 5 heat Plastics are compared, this layer is made of the material of elastically deformable.It is above-mentioned to be applied in the punch steps that Fig. 5-Fig. 7 is discussed in greater detail in fact It is existing.After punch steps pass through, as Fig. 1 and pin-like contact section 4 shown in Figure 2 can oneself beyond layer 10 and thus from outside It is contacted by ground.
In order to realize electrical contact, the contact section 4 that can freely contact from outside is welded simultaneously in the pad of circuit board 19 Thus it is connect with the conductive wire being located on circuit board 19.As schematically shown in Fig. 3, layer 10 is then adjacent on both sides Ground is arranged between the outside of shell 5 and circuit board 19.
In the top view for the module being shown in FIG. 4, through-hole 6,6 ' regular grid 9 by dielectric housings 5 it is visible.This The dielectric housings 5 of sample building can high cloth that is general and ensuring connecting element 7 for the corresponding specific design of module simultaneously Set flexibility.In embodiment shown here, partial through holes 6 are applied only for connecting element 7.In this embodiment its Remaining through-hole 6 ' be not required for interface element 7 and then only formed in this embodiment undesirable through-hole 6 ', moisture Inside modules can be entered by it with pernicious gas.These undesirable through-holes 6 ' independent specific with module design that is, The independent setting with connecting element 7 and layer 10 through the invention and be completely covered so that the composition external barrier of layer 10, Moisture and pernicious gas is prevented to enter inside modules.In addition to through-hole 6,6 ' rule grid 9, there are open through-hole 11, Filling as encapsulating glue material is open and is applied in the manufacturing process of module.
Fig. 6 is the schematic perspective view of punch die 14, and punch die and the hull outside of module 1 shown in Fig. 6 complementally construct. Punch die 14 has the regular grid in complementary hole 16 for accommodating pin-like contact section 4.Hole 6,6 ' regular grid this Complementary setting so that through-hole 6,6 ' independent specific design with module 1 and be completely covered.In order to which module 1 is in the punching course phase Between can be guided to be cooperated to shown in Fig. 5 four there are four induction elements 15 with the ordinatedly punching press of punch die 14 In hole 17.
The combination of the visible punch die before punch steps 14, module 1 and layer 10 in Fig. 7.10 shape-ordinatedly position of layer In on punch die and fixed on punch die.In punching course, module 1 is adaptedly stamped on punch die 14 completely, so that contact Pin 4 pierces through layer 10 and is engaged in the hole 16 of punch die.

Claims (14)

1. a kind of device has power semiconductor modular (1) and the circuit board (19) with conducting wire, wherein
The power semiconductor modular (1) has the following terms:
Substrate (2), for being fixed at cooling body with heat conduction；
At least one semiconductor subassembly (3), is arranged on the substrate (2)；
At least one connecting element (7), conductively connect with the semiconductor subassembly (3), and the connecting element (7) is in its freedom There is contact section (4) at end；
The shell (5) of electrical isolation, be at least partially accommodated in the shell substrate (2) and it is described at least one partly lead Body component (3), and the shell (5) has at least one through-hole (6) for the connecting element (7)；
Wherein at least one described connecting element (7) is arranged to extend through the through-hole (6), and
Layer (10) around the connecting element (7) compared with case material by having plasticity or elastically-deformable material system At；
Wherein the contact portion section (4) is arranged to beyond the layer (10) and the hull outside,
And wherein the conducting wire of the circuit board (19) and the contact section (4) are conductively connected,
It is characterized in that,
The layer (10) is adjacently arranged at the circuit board (19) and the hull outside.
2. the device according to preceding claims, wherein be additionally provided in the hull outside region it is open, with At least one adjacent other parallel through-hole (6) of first through hole (6), at least one described other parallel through-hole (6) It is covered by the layer (10).
3. device according to claim 1 or 2 is provided with multiple through-holes (6) that shape is consistent, parallel, described Multiple through-holes (6) are then arranged to the grid (9) of rule.
4. device according to claim 1 or 2, wherein the ingredient of the layer (10) has at least one siloxanes.
5. device according to claim 4, wherein the siloxanes is polysiloxanes.
6. device according to claim 1 or 2, wherein the ingredient of the layer (10) has at least one polyimides.
7. device according to claim 6, wherein the polyimides is poly- (4,4'- oxygen diphenylenes-pyromellitic acid).
8. device according to claim 1 or 2, wherein the ingredient of the layer (10) has at least one polymer.
9. device according to claim 1 or 2, wherein the layer (10) is made from a material that be electrically non-conductive.
10. device according to claim 1 or 2, wherein the layer (10) is by adhesive attachment in the hull outside And/or at the connecting element (7).
11. device according to claim 1 or 2, wherein the layer (10) is accommodated in the recess of the hull outside.
12. device according to claim 1 or 2, wherein the contact portion section (4) and the conducting wire weld.
13. method of the one kind for manufacturing power semiconductor modular (1), includes the following steps:
Preparation process, prepares power semiconductor modular (1) in the preparation process, and the power semiconductor modular (1) includes
Substrate (2), for being fixed at cooling body with heat conduction；
At least one semiconductor subassembly (3), is arranged on the substrate (2)；
At least one connecting element (7), conductively connect with the semiconductor subassembly (3), and the connecting element (7) is in its freedom There is contact section (4) at end；
The shell (5) of electrical isolation, be at least partially accommodated in the shell substrate (2) and it is described at least one partly lead Body component (3), and the shell (5) has at least one through-hole (6)；
Wherein at least one described connecting element (7) is arranged to extend through the through-hole (6) and utilizes at least one described company The contact section (4) of element is connect beyond hull outside；
It is characterized in that,
Subsequent application step in time, wherein applying in the hull outside adjacent with the hull outside and surrounding The layer (10) of the connecting element (7) so that the contact section (4) is arranged to beyond the layer (10), the layer by Plasticity or elastically-deformable material are made compared with case material,
It is subsequent on time, the power semiconductor modular (1) is arranged on the circuit board with conducting wire (19) so that institute State the step of layer (10) is arranged between the hull outside and the circuit board (19), and it is subsequent in time will be described Contact section (4) and the conductively connected step of the conducting wire.
14. the method according to preceding claims, wherein described apply the thermal contraction process that step includes the layer (10) And/or the punching course of the layer (10), wherein contact section (4) is each passed through the layer (10).
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Publication number Priority date Publication date Assignee Title
US10959342B2 (en) * 2019-04-08 2021-03-23 Kevin R. Williams Condensation resistant power semiconductor module
DE102018102002A1 (en) * 2018-01-30 2019-08-01 Semikron Elektronik Gmbh & Co. Kg Method for producing a power semiconductor module and power semiconductor module

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1263124C (en) * 2000-02-24 2006-07-05 欧佩克欧洲功率半导体股份有限两合公司 Large power semiconductor assembly capable of relieving mechanical stress
CN103178022A (en) * 2011-12-22 2013-06-26 赛米控电子股份有限公司 Semiconductor power module or actuation module for same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2118356A1 (en) * 1971-04-15 1972-10-26 Siemens AG, 1000 Berlin u. 8000 München Disc-shaped semiconductor component
IL118025A0 (en) * 1995-04-25 1996-08-04 Minnesota Mining & Mfg Tackified polydiorganosiloxane polyurea segmented copolymers and a process for making same
DE29900370U1 (en) * 1999-01-12 1999-04-08 Eupec Gmbh & Co Kg Power semiconductor module with cover
JP4848187B2 (en) * 2006-01-17 2011-12-28 日立オートモティブシステムズ株式会社 Power converter
JP4911725B2 (en) * 2008-02-18 2012-04-04 三菱電機株式会社 Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1263124C (en) * 2000-02-24 2006-07-05 欧佩克欧洲功率半导体股份有限两合公司 Large power semiconductor assembly capable of relieving mechanical stress
CN103178022A (en) * 2011-12-22 2013-06-26 赛米控电子股份有限公司 Semiconductor power module or actuation module for same

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