CN106449430A - Composite structure heat sink preparation method - Google Patents
Composite structure heat sink preparation method Download PDFInfo
- Publication number
- CN106449430A CN106449430A CN201610960723.5A CN201610960723A CN106449430A CN 106449430 A CN106449430 A CN 106449430A CN 201610960723 A CN201610960723 A CN 201610960723A CN 106449430 A CN106449430 A CN 106449430A
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- China
- Prior art keywords
- heat sink
- fin
- preparation
- heat
- silicon
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
Abstract
The invention discloses a composite structure heat sink preparation method, and relates to the technical field of heat radiation of electronic equipment. The heat sink prepared through the composite structure heat sink preparation method is provided with a two-stage composite structure, wherein the first stage structure is a macroscopic fin structure and the second stage structure is a microstructure on the surface of the fin. Because of the two-stage composite structure, the heat exchange surface area of the heat sink is greatly increased compared with a heat sink without the second stage microstructure. The composite structure heat sink preparation method utilizes the heat structure in a parallel plate fin manner, and selects silicon as the raw material for manufacture, and uses a silicon etching micromachining method to respectively machine the microstructure and the slot structure on the surface of the fin and the surface of a pedestal. Finally, the fin is disposed in the slot of the pedestal to complete assembling. The heat sink two-stage structure prepared by means of the composite structure heat sink preparation method significantly improves the heat radiation performance of the heat sink, and provides a more effective heat radiation apparatus for electronic devices.
Description
Technical field
The present invention relates to electronic equipment dissipating heat technical field, more particularly, to a kind of electronic device cooling radiator
(heat sink).The present invention increases heat sink heat convection area by increasing micro structure on heat sink fin surface, whole so as to strengthen
The heavy heat exchange efficiency of body heat.
Background technology
Heat sink as in a kind of electronic device heat management commonly use part, electronic device produce heat passed by hot interface
Being directed at heat sink and heat exchange is carried out with external environment (as air).In order to maximize the efficiency of heat exchange, heat sink generally set
Count into structure (pin rib type, parallel rib of slab type etc.) with larger surface area to increase heat exchange area.
With the continuous development of quasiconductor integrated technique technology, on one single chip, integrated number of transistors is constantly increasing
Plus, corresponding chip power-consumption is also increasing with the heat density of unit chip area.Supercharge on limited device volume
The heat exchange area of part becomes a kind of feasible method of heat radiation power
Semiconductor industry of the silica-base material in today plays key player, compared with metal material, as which is excellent
Characteristic of semiconductor and mechanical property, it is widely used in the fields such as integrated circuit, semiconductor device, MEMS.With conventional
Metal heat sink material (aluminum, copper etc.) compare, silicon has the thermal conductivity higher than aluminium alloy, the density less than copper.Meanwhile, silicon has
The hardness higher than aluminium alloy and copper, the less coefficient of expansion.Therefore silicon is a kind of preferable heat sink material.
Have benefited from the development of micro-processing technology, especially for the development of silicon materials process technology, we can be in silicon material
The less structure of yardstick is made on material.Be applied to heat sink in, heat sink heat exchange surface structure can be reduced to micron order yardstick.In phase
In the case of same volume, compared with traditional heat sink structure, using micro-processing technology make heat sink with bigger surface area,
Heat exchange efficiency is also of a relatively high.
Content of the invention
It is an object of the invention to provide a kind of heat sink manufacture method of composite construction high heat-exchanging performance, is applied to electronics
On device, strengthen the radiating efficiency of device.The present invention is manufactured using silicon materials, and the heat sink structure using equality rib of slab formula, with
Traditional integrally formed heat sink processing method difference, the present invention is by the way of base with fin separate machined.
The technical solution used in the present invention is：
Preparation method that a kind of composite construction is heat sink, the heat sink fin by with very low power structure prepared by the preparation method with
Base two parts composition with slot；During this is heat sink, fin is machined with slot with base in succession, in the base for convenience
Structure.
Further, the heat sink middle fin is made as raw material using silicon with base.
Further, the heat sink middle fin surface very low power structure is added by deep silicon etching technique with susceptor surface inserting slot construction
Work.
Further, fin depth-to-width ratio macroscopically is more than 10, and the depth-to-width ratio of fin surface very low power structure is more than 10.
Further, the procedure of processing of fin is as follows：1), hmds is processed, for increasing sticking for photoresist
Property；2), spin coating；3), develop；4), deep silicon etching, etches two grade very low power structures of the depth-to-width ratio more than 10 in silicon chip surface.
5), cleaning scribing, silicon chip is cut into correspondingly sized fin.
The advantage that the composite construction silicon substrate of the present invention is heat sink is as follows：
(1) the heat sink composite construction with two-stage of the composite construction of the present invention:The rib structure of macroscopic view and fin surface
Micro structure.Compared with the convention heat sink of same volume shape, heat exchange surface area can increase by more than ten times, corresponding heat exchange efficiency
Also increased.
(2), application of the present invention suitable for free convection with forced convertion, according to different radiating requirements, can pass through
The mode of welding or heat conductive silica gel bonding is fixed on chip or circuit board surface, and due to the high surfacing of silicon chip
Degree, advantageously reduces the space of binding face, has higher laminating degree, so as to reduce thermo-contact when viscous with chip or circuit board
Thermal resistance.
(3) present invention is manufactured using silicon materials, and compared with traditional heat sink material aluminium alloy, silicon has advantages below：More
High thermal conductivity, higher hardness, lower density, lower thermal coefficient of expansion.In conjunction with micro-processing technology, with silicon material as this
The material of invention, can make preferably more heat sink than convention heat sink performance.
Description of the drawings
Fig. 1 (a) is the heat sink side view of composite construction silicon substrate；
Fig. 1 (b) is the heat sink top view of composite construction silicon substrate；
Fig. 2 is the heat sink schematic diagram of composite construction silicon substrate；
Fig. 2 (a) is the heat sink overall schematic of composite construction silicon substrate；
Fig. 2 (b) is the heat sink fin surface very low power structural representation of composite construction silicon substrate；
Fig. 3 is fin procedure of processing schematic diagram；
Fig. 4 is fin surface very low power structural representation；
Fig. 5 is the heat sink mounting means figure of composite construction silicon substrate；
Fig. 5 (a) is for being horizontally mounted figure；
Fig. 5 (b) is right angle setting figure；
Fig. 6 composite construction silicon substrate is heat sink schematic diagram；
Fig. 6 (a) is the heat sink overall schematic of composite construction silicon substrate, and wherein fin is double array；
Fig. 6 (b) is the micro- column structure schematic diagram in the heat sink fin surface of composite construction silicon substrate.
In figure：1- fin, 2- base, 3- inserting slot construction, 4- fin and base bound fraction, 5- very low power structure, 6- sends out
Hot-electron device, 7- thermal interfacial material, 8- gravity direction.
Specific embodiment
With reference to specific embodiment, the present invention will be further described, but the present invention is not limited to following examples, tool
Body is not limited to the very low power structure in following examples for fin surface micro-structure, and the arrangement of fin is not limited in following examples
Mode.
The structure chart of the present embodiment is as shown in Figure 1, 2, different from traditional integrally formed heat sink processing method, the present invention
By the way of base 2 and 1 separate machined of fin.The manufacture method of wherein base 2 is to pass through micro-machined side on silicon submount
Method processes the inserting slot construction 3 suitable with 1 thickness of fin, and inserting slot construction 3 is easy to consolidating for fin 1 with certain depth with interval
Fixed and arrangement.After the processing for completing inserting slot construction 3, according to the application size of radiating element, by scribing machine, by base
2 shapes for cutting into predefined size.Fin 1 is by the micro-processing method of deep silicon etching on silicon fin, processes depth-to-width ratio
Very low power structure 5 more than 10.Afterwards fin 1 is cut into by the size corresponding with base slot structure 3 by scribing machine.
Below specific procedure of processing is described further.
As shown in figure 3, the procedure of processing of fin is as follows：
1st, HMDS (hmds) is processed, for increasing the adhesion of photoresist.
2nd, spin coating.
3rd, develop.
4th, deep silicon etching, etches two grade very low power structures 5 of the depth-to-width ratio more than 10 in silicon chip surface.
5th, cleaning scribing, silicon chip is cut into correspondingly sized fin 1.
By above step, we can obtain the heat sink fin 1 with surface micro-structure.The processing method of base 2 is same
The procedure of processing of fin 1 is identical.After above processing is completed, by 1 inserted base inserting slot construction 3 of heat sink fin, in interface
Place ensures the adhesive strength of seam and heat conductivity with heat-conducting glue bonding, completes this composite construction silicon substrate after heat conduction adhesive curing
Heat sink making.
In the present embodiment, vertical with base 2 in 1 partial etching outgoing direction of silicon chip fin using deep silicon etching technique
Very low power structure 5.Its width is 15 μm, and depth is 180 μm, at intervals of 15 μm.Also with deep silicon etching technique in silicon chip
2 partial etching of base goes out inserting slot construction 3.1 quantity of fin is 7, height 15mm, width 30mm, is spaced 3.8mm, thickness
1.2mm；2 thickness 0.5mm of base, length 35.2mm, width 30mm, 200 μm of 2 depth of slot.
Composite construction in the embodiment is heat sink, with two-stage.The first order is the fin 1 of macroscopic view, and the second level structure is
The very low power structure 5 on 1 surface of fin.According to fin surface micro-structure schematic diagram in Fig. 4, can obtain equation below come calculate with
The area that non-structured surface is compared increases percentage ratio
According to data above, rib structure increases percentage ratio in area macroscopically
Area increase%=1+2 × 15/5 × 100%=700%
The area of fin surface microstructure increases percentage ratio
Area increase%=1+2 × 180/30 × 100%=1300%
By above formula as can be seen that increasing very low power structure 5 on fin 1 can greatly increase heat exchange surface area.Tool
The numerical value that body increases can be adjusted with spacing P by adjusting the height H of very low power structure 5.In the present embodiment, fin 1
It is 1300% that surface area increases percentage ratio.
Application mode in electronic device that the composite construction silicon substrate is heat sink is as shown in figure 5, the present invention is logical with electronic device 6
Cross thermal interfacial material 7 to contact, it is ensured that the heat in electronic device can be conducted to heat sink.Represented in (a) (b) in Fig. 5 is certainly
Right being horizontally mounted and right angle setting under concurrent condition, in order to ensure radiating efficiency, with this understanding in fin very low power side
To parallel with gravity direction 8.
Certainly, the invention is not restricted to above-described embodiment, referring to accompanying drawing 6,1 part of fin therein, can adopt double or many
The arrangement mode of row is arranged on base 2, double array as shown in Fig. 6 (a).1 surface micro-structure of fin is also not necessarily limited to above-mentioned
Very low power structure 5 in embodiment, or micro- column structure surface or can increase by 1 cooling surface area of fin other knot
Shown in structure, such as Fig. 6 (b).
It should be noted that the preferred embodiment of the present invention is the foregoing is only, only the present invention is explained, not thereby limit
The scope of the claims of the present invention processed.Only obviously changing to belonging to the technology of the present invention design, equally model is protected in the present invention
Within enclosing.
Claims (6)
1. the heat sink preparation method of a kind of composite construction, it is characterised in that：
The preparation method heat sink fin by with very low power structure for preparing and the base two parts for carrying slot constitute；
During this is heat sink, fin is machined with inserting slot construction with base in succession, in the base for convenience.
2. the heat sink preparation method of composite construction according to claim 1, it is characterised in that：This is heat sink, and middle fin is adopted with base
Made as raw material with silicon.
3. the heat sink preparation method of composite construction according to claim 1 and 2, it is characterised in that：This is heat sink middle fin surface
Very low power structure is processed by deep silicon etching technique with susceptor surface inserting slot construction.
4. preparation method that composite construction according to right 3 is heat sink, it is characterised in that：Fin depth-to-width ratio macroscopically is more than
10, the depth-to-width ratio of fin surface very low power structure is more than 10.
5. preparation method that composite construction according to right 1 is heat sink, it is characterised in that：The procedure of processing of fin is as follows：1), six
Two silicon amine of methyl is processed, for increasing the adhesion of photoresist；2), spin coating；3), develop；4), deep silicon etching, in silicon chip surface
Etch two grade very low power structures of the depth-to-width ratio more than 10；5), cleaning scribing, silicon chip is cut into correspondingly sized fin.
6. preparation method that composite construction according to right 3 is heat sink, it is characterised in that：Fin surface is micro- column structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610960723.5A CN106449430A (en) | 2016-11-04 | 2016-11-04 | Composite structure heat sink preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610960723.5A CN106449430A (en) | 2016-11-04 | 2016-11-04 | Composite structure heat sink preparation method |
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| Publication Number | Publication Date |
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| CN106449430A true CN106449430A (en) | 2017-02-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610960723.5A Pending CN106449430A (en) | 2016-11-04 | 2016-11-04 | Composite structure heat sink preparation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783767A (en) * | 2017-03-31 | 2017-05-31 | 山东超越数控电子有限公司 | A kind of radiator with surface micro-structure and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5975650A (en) * | 1982-10-22 | 1984-04-28 | Nec Corp | Heat sink for semiconductor device |
| CN1557019A (en) * | 2002-01-02 | 2004-12-22 | 艾尔坎技术及管理有限公司 | Heat sink for semiconductor components or similar devices, method for producing the same and tool for carrying out said method |
| US20060232932A1 (en) * | 2005-04-15 | 2006-10-19 | Curtis Robert B | Heatsink for electronic heat generating components |
| US20140290926A1 (en) * | 2013-04-02 | 2014-10-02 | Gerald Ho Kim | Silicon-Based Heat-Dissipation Device For Heat-Generating Devices |
-
2016
- 2016-11-04 CN CN201610960723.5A patent/CN106449430A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5975650A (en) * | 1982-10-22 | 1984-04-28 | Nec Corp | Heat sink for semiconductor device |
| CN1557019A (en) * | 2002-01-02 | 2004-12-22 | 艾尔坎技术及管理有限公司 | Heat sink for semiconductor components or similar devices, method for producing the same and tool for carrying out said method |
| US20060232932A1 (en) * | 2005-04-15 | 2006-10-19 | Curtis Robert B | Heatsink for electronic heat generating components |
| US20140290926A1 (en) * | 2013-04-02 | 2014-10-02 | Gerald Ho Kim | Silicon-Based Heat-Dissipation Device For Heat-Generating Devices |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783767A (en) * | 2017-03-31 | 2017-05-31 | 山东超越数控电子有限公司 | A kind of radiator with surface micro-structure and preparation method thereof |
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Application publication date: 20170222 |