CN106444207A - Integrated all-optical switch - Google Patents
Integrated all-optical switch Download PDFInfo
- Publication number
- CN106444207A CN106444207A CN201610908050.9A CN201610908050A CN106444207A CN 106444207 A CN106444207 A CN 106444207A CN 201610908050 A CN201610908050 A CN 201610908050A CN 106444207 A CN106444207 A CN 106444207A
- Authority
- CN
- China
- Prior art keywords
- photoswitch
- integrated
- optical switch
- detection device
- photocurrent detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3136—Digital deflection, i.e. optical switching in an optical waveguide structure of interferometric switch type
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12145—Switch
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/212—Mach-Zehnder type
Abstract
The invention provides an integrated all-optical switch. The integrated all-optical switch comprises a photoelectric current detector and an optical switch body, wherein the control end of the optical switch body is connected with the output end of the photoelectric current detector. The integrated all-optical switch has the advantages of being high in efficiency, easy to make and fully integrated.
Description
Technical field
The invention belongs to semiconductor optical switch field, more particularly to a kind of integrated all-optical switch.
Background technology
In the face of the information data flow being skyrocketed through, the tradition electricity exchanged form of data transfer has become high-speed high capacity light
The bottleneck of network Development.Existing electricity exchanged form is difficult to meet growing data transmission bauds, capacity and network size
Requirement;Realize having the advantages that switching delay is little, data band is roomy by the way of light is exchanged, exchange small power consumption using photoswitch,
It is widely believed that to be the desirable route for solving the problems, such as development of optical network.In future, cutting for light path is directly controlled by optical signal
The all-optical switch for changing, can realize All-optical routing using this kind of photoswitch, realize packet-switching, be the core in all-optical network
Device.
At present using waveguiding structure device photoswitch because its have small volume, can integrated, stability be high, switching speed is fast
The advantages of, it is widely studied in recent years.These devices all control its on off state by the signal of telecommunication, it is impossible to realize full light and open
Close.All-optical switch technology is also in the exploratory stage at present, and existing implementation has:Using the non-of semiconductor optical amplifier SOA
Linear effect, realizes light path switching;The variations in refractive index that the nonlinear effects such as the optical kerr effect using material cause realizes light
Road switches.These methods for realizing all-optical switch are generally required for injecting the non-linear of high density luminous power excitation material, conversion
Efficiency is low, realizes difficulty big.
Content of the invention
It is an object of the invention to, a kind of integrated all-optical switch is provided, with efficiency high, is easily realized, fully integrated is excellent
Point.
The present invention provides a kind of integrated all-optical switch, including:
One photocurrent detection device;
One photoswitch, its control end end is connected with the outfan of photocurrent detection device.
The invention has the beneficial effects as follows, with efficiency high, easily realize, fully integrated advantage.
Description of the drawings
For further illustrating the technology contents of the present invention, with reference to embodiments and after accompanying drawing detailed description such as, wherein:
Fig. 1 is the structured flowchart of the present invention;
Fig. 2 is the equivalent circuit schematic of Fig. 1;
Fig. 3 is the photocurrent response curve synoptic diagram of photocurrent detection device in Fig. 1;
Fig. 4 is the curve synoptic diagram of photoswitch in Fig. 1.
Specific embodiment
Refer to shown in Fig. 1 and Fig. 2, the present invention provides a kind of integrated all-optical switch, including:
One photocurrent detection device 10, the photocurrent detection device 10 is the photo-detector of germanium silicon material or III-V material
Photo-detector;The effect of photocurrent detection device 10 is that optical control signal is converted to current controling signal driven optical switch, changes
The working condition of dimmer switch.The principle of photocurrent detection device is the optical absorption characteristics using material, produces photo-generated carrier,
Photoelectric current is formed under the driving of extra electric field, so as to convert optical signals to current signal;Common device architecture have PTN type,
APD type and MSM type detector, optical signal all can be switched to current signal by the detector of these different structures;Germanium silicon material and
The detector of III-V material is the current ripe photoelectric detector for communication band, and its device size is little, conversion effect
Rate height, integrated level height.
One photoswitch 20, its control end end is connected with the outfan of photocurrent detection device 10, and the photoswitch 20 is electric current
Driving photoswitch, its operation principle is to change, using injection carrier, refractive index or the absorption gain system that device medium wave leads material
Number, so as to realize the switching of photoswitch light path or break-make.The photoswitch 20 is the photoswitch of silicon substrate or III-V material.Three or five
Race's material is integrated photonic device material platform more ripe at present, and the current drive-type photoswitch of III-V material is using note
Enter the change of carrier concentration, change refractive index or the gain factors coefficient of fiber waveguide, so as to realize the switching of light path or logical
Disconnected.The photoswitch of silica-base material is made up of the phase displacement arm waveguide of 2 3dB light splitting couplers and PIN structural.Wherein PIN phase shift
Arm waveguide changes silicon substrate fiber waveguide refractive index using carrier dispersion effect, so as to change light path.
The optical texture of the photoswitch 20 is MZI type photoswitch, or micro-loop type photoswitch.Silicon substrate MZI type light is opened
Close and be made up of 2 3dR light splitting couplers and phase displacement arm waveguide.By changing phase displacement arm waveguide index, so as to change light path
Phase contrast, realize break-make and the switching of light path.Silicon-based micro ring type photoswitch is made up of the disc waveguide of straight wave guide and closing, root
According to the resonance characteristic of disc waveguide, the light of some specific wavelengths produces resonance in ring, changes its direction of propagation.By changing ring
The refractive index of inner waveguide, and then change the wavelength of resonance.
The structure of wherein photocurrent detection device 10 and photoswitch 20 is equivalent to the diode of two differential concatenations, photoswitch 20
P pole be extremely connected with the P of photocurrent detection device 10, the N pole of photoswitch 20 is connected to ground, N pole and the electricity of photocurrent detection device 10
Source positive pole is connected.
The work process of the present invention is:
As shown in figure 1, photocurrent detection device 10 and photoswitch 20 can be equivalent to two diodes from operation principle.Light
The P pole of the PIN phase displacement arm of switch 20 is extremely connected with the P of photocurrent detection device 10, and the N pole of photoswitch 20 is connected to ground, photoelectric current
The N pole of detector 10 is connected with positive source, and formation photocurrent detection device 10 is connected with the opposite polarity of photoswitch 20.Outside
Under the electric field action for powering up, photocurrent detection device 10 is operated in diode reverse-biased, and photoswitch 20 is just being operated in diode
Inclined state.Control optical signal Lc enters 10 generation photoelectric current Io driven optical switch 20 of photocurrent detection device by waveguide and works.Control
When optical signal processed is closed, photocurrent detection device 10 produces faint dark current and flows through whole link, and the effect of photoswitch 20 is neglected
Slightly disregard, the state of photoswitch 20 does not change, crossing condition is operated in, be i.e. the light of 1 port input is exported from port 2 ', 2
The light of port input is exported from port 1 '.When control optical signal is opened, photocurrent detection device 10 produces photoelectric current through photoswitch
20 phase displacement arm, size of current is directly proportional to the control signal luminous power size of input, as shown in Figure 3.The light intensity of photoswitch 20
As shown in Figure 4 with the change of its operating current.Producing by selecting suitable luminous power size occurs the state of photoswitch 20
The photoelectric current of change so as to be operated in pass-through state, i.e. the light of 1 port input is from port 1 ', and the light of 2 ports input is from port 2 '
Output, realizes light path switching.
Particular embodiments described above, has been carried out to the purpose of the present invention, technical scheme and beneficial effect further in detail
Describe in detail bright, it should be understood that the foregoing is only the specific embodiment of the present invention, be not limited to the present invention, all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvement that is done etc., should be included in the protection of the present invention
Within the scope of.
Claims (6)
1. a kind of integrated all-optical switch, including:
One photocurrent detection device;
One photoswitch, its control end end is connected with the outfan of photocurrent detection device.
2. integrated all-optical switch according to claim 1, the structure of wherein photocurrent detection device and photoswitch is equivalent to
The diode of two differential concatenations, the P pole of photoswitch is extremely connected with the P of photocurrent detection device, and the N pole of photoswitch is connected to ground,
The N pole of photocurrent detection device is connected with positive source.
3. integrated all-optical switch according to claim 2, wherein photoswitch is current drive-type photoswitch.
4. integrated all-optical switch according to claim 2, wherein photocurrent detection device is the photo-detector of germanium silicon material
Or the photo-detector of III-V material.
5. integrated all-optical switch according to claim 3, wherein photoswitch is the photoswitch of silicon substrate or III-V material.
6. integrated all-optical switch according to claim 5, the optical texture of wherein photoswitch is MZI type photoswitch, or
Person is micro-loop type photoswitch.
Priority Applications (1)
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CN201610908050.9A CN106444207A (en) | 2016-10-18 | 2016-10-18 | Integrated all-optical switch |
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CN201610908050.9A CN106444207A (en) | 2016-10-18 | 2016-10-18 | Integrated all-optical switch |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60263126A (en) * | 1984-06-12 | 1985-12-26 | Omron Tateisi Electronics Co | Optical logical circuit |
US5037169A (en) * | 1990-02-20 | 1991-08-06 | Unisys Corporation | High speed low loss optical switch for optical communication systems |
CN1363855A (en) * | 2002-01-30 | 2002-08-14 | 北京大学 | NOT gate and AND gate for optical logic operation |
US6876487B1 (en) * | 2001-03-14 | 2005-04-05 | Lightbit Corporation, Inc. | Any-to-any all-optical wavelength converter |
CN105051598A (en) * | 2013-11-27 | 2015-11-11 | 华为技术有限公司 | Optical value full adder and optical value full adding method and device |
CN105492956A (en) * | 2014-03-18 | 2016-04-13 | 华为技术有限公司 | Apparatus and method for feedback system for optical switch controller |
CN105759533A (en) * | 2016-04-06 | 2016-07-13 | 宁波大学 | Silicon-based electro-optic logic OR/NOR gate |
-
2016
- 2016-10-18 CN CN201610908050.9A patent/CN106444207A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60263126A (en) * | 1984-06-12 | 1985-12-26 | Omron Tateisi Electronics Co | Optical logical circuit |
US5037169A (en) * | 1990-02-20 | 1991-08-06 | Unisys Corporation | High speed low loss optical switch for optical communication systems |
US6876487B1 (en) * | 2001-03-14 | 2005-04-05 | Lightbit Corporation, Inc. | Any-to-any all-optical wavelength converter |
CN1363855A (en) * | 2002-01-30 | 2002-08-14 | 北京大学 | NOT gate and AND gate for optical logic operation |
CN105051598A (en) * | 2013-11-27 | 2015-11-11 | 华为技术有限公司 | Optical value full adder and optical value full adding method and device |
CN105492956A (en) * | 2014-03-18 | 2016-04-13 | 华为技术有限公司 | Apparatus and method for feedback system for optical switch controller |
CN105759533A (en) * | 2016-04-06 | 2016-07-13 | 宁波大学 | Silicon-based electro-optic logic OR/NOR gate |
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Application publication date: 20170222 |
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