CN106435687A - Electronic device shell, processing method thereof and electronic device - Google Patents
Electronic device shell, processing method thereof and electronic device Download PDFInfo
- Publication number
- CN106435687A CN106435687A CN201610840705.3A CN201610840705A CN106435687A CN 106435687 A CN106435687 A CN 106435687A CN 201610840705 A CN201610840705 A CN 201610840705A CN 106435687 A CN106435687 A CN 106435687A
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- Prior art keywords
- metal base
- electronic device
- device housing
- oxide film
- described metal
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
- C25D11/243—Chemical after-treatment using organic dyestuffs
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
- C25D11/08—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing inorganic acids
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/12—Anodising more than once, e.g. in different baths
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/16—Pretreatment, e.g. desmutting
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
- C25D11/246—Chemical after-treatment for sealing layers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a processing method of an electronic device shell. The method includes the steps of providing a metal base material; anodizing the metal base material to form an anode oxide film on the surface of the metal base material, wherein the anode oxide film is provided with a plurality of film holes; dyeing the metal base material and filling the multiple film holes of the anode oxide film with luminous materials and dyestuff; and carrying out hole sealing treatment on the metal base material. The invention further provides the electronic device shell and an electronic device.
Description
Technical field
The present invention relates to a kind of shell is and in particular to a kind of electronic device housing and its processing method, and a kind of electronics dress
Put.
Background technology
In recent years, with industries such as consumer electrical equipment booming with computer, communication, people are for mobile phone, flat board electricity
The requirement more and more higher of the shell of the electronic installations such as brain.Metal shell is not only lightweight and has metal-like.Metal shell warp
The staining technique of anodized is ripe, and it can not only protect shell to avoid corrosion and scratch, may also provide dress attractive in appearance
Decorations effect.However, the metal shell through anodized is only just available for people's appreciation under bright and clear environment at present,
Lose aesthetic in dark, and inconvenient people find described electronic installation in the dark.
Content of the invention
In view of the foregoing it is necessary to provide a kind of electronic device housing and its processing method and a kind of electronic installation, with
Solve the above problems.
A kind of processing method of electronic device housing, including：One metal base is provided；Anode is carried out to described metal base
Oxidation processes, to form anode oxide film on the surface of described metal base, described anode oxide film has multiple fenestras；Right
Described metal base carries out dyeing process, to insert Noctilucent material and dyestuff in multiple fenestras of described anode oxide film；Right
Described metal base carries out sealing pores.
A kind of electronic device housing, the anode oxide film including metal base and located at described metallic substrate surface, described
Anode oxide film includes multiple fenestras, is separately filled with Noctilucent material and dyestuff in the plurality of fenestra.
A kind of electronic installation, including electronic device housing, described electronic device housing includes metal base and located at described
The anode oxide film of metallic substrate surface, described anode oxide film includes multiple fenestras, is separately filled with the plurality of fenestra
Noctilucent material and dyestuff.
Compared to prior art, the processing method of the electronic device housing of the present invention is included at anodized and dyeing
Reason, dyeing processes in the multiple fenestras that can make anode oxide film and inserts Noctilucent material and dyestuff, thus Noctilucent material is adsorbed
To in anode oxide film.Noctilucent material can automatic luminous in the dark, thus outside the electronic installation that is obtained of above-mentioned processing method
Shell has the function of noctilucence, convenience when improving in the adusk sight of electronic device housing and using, and uses
Person also can easily find the electronic installation with described electronic shell in the dark.
Brief description
Fig. 1 is the schematic flow sheet of the processing method of electronic device housing in first embodiment of the invention.
Fig. 2 is the structural representation of electronic device housing of the present invention.
Fig. 3 is the schematic flow sheet of the processing method of electronic device housing in second embodiment of the invention.
Main element symbol description
| Electronic device housing | 200 |
| Metal base | 100 |
| Anode oxide film | 10 |
| Barrier layer | 11 |
| Porous layer | 12 |
| Fenestra | 20 |
| Noctilucent material | 30 |
| Dyestuff | 40 |
Following specific embodiment will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is purged, complete
Site preparation describes it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.
Based on the embodiment in the present invention, those of ordinary skill in the art institute on the premise of not making creative work
The every other embodiment obtaining, broadly falls into the scope of protection of the invention.
Referring to Fig. 1 and Fig. 2, first embodiment of the invention proposes a kind of processing side of electronic device housing 200
Method.Electronic device housing 200 is applied to multiple electronic installations, the such as mobile terminal such as mobile phone, panel computer, but not limited to this.
The processing method of described electronic device housing 200 comprises the following steps：
Step S101：One metal base 100 is provided.
In the present embodiment, metal base 100 is aluminum alloy base material, but not limited to this.Metal base 100 is alternatively aluminum
Base material, magnesium/magnesium alloy base material, or titanium/titanium alloy base material etc..
In the present embodiment, the profile needed for metal base 100 has electronic device housing 200.It is appreciated that at it
In his embodiment, metal base 100 can be general metal plate base material, now, after metal base 100 is provided, can be right
Described metal base 100 carries out machining, so that described metal base 100 has the profile needed for electronic device housing 200.
Step S102：Anodized is carried out to metal base 100, so that sun to be formed on the surface of metal base 100
Pole oxide-film 10, anode oxide film 10 has multiple fenestras 20.
Anode oxide film 10 includes the barrier layer 11 sequentially generating and porous layer 12, barrier layer 11 near metal base 100,
And the thickness on barrier layer 11 is less than the thickness of porous layer 12.Multiple fenestras 20 are located in porous layer 12, and multiple fenestra 20 is
Blind hole.
In order to obtain larger porosity, in the step of anodized, anodic oxidation voltage need to be less than or equal to
16 volts（V）, meanwhile, in order to obtain thicker porous layer 12 and transparent anode oxide film 10, can be carried out using DC current
Anodized, and be electrolyte using sulphuric acid.Hardness in order to prevent top layer anode oxide film 10 quickly reduces, preferably
Ground, the thickness of anode oxide film 10 is less than or equal to 20 microns（µm）.It is preferred that the temperature of anodized is 20 DEG C, when
Between be 20 ~ 30 minutes, oxidation voltage be 13 ~ 14V.
Step S103：Dyeing process is carried out to metal base 100, to insert in multiple fenestras 20 of anode oxide film 10
Noctilucent material 30 and dyestuff 40.
It is appreciated that can be selected for any photism powder body known to this technical field to prepare Noctilucent material.Noctilucence material
Material first absorbs various light and heats, is converted into luminous energy storage, then automatic luminous in the dark, so that people in the dark also can be light
Loose ground finds described electronic device housing 200.Because the fenestra 20 of anode oxide film 10 is less, usual fenestra a diameter of 15 ~
20 nanometers, therefore, Noctilucent material preferably uses Noctilucent nanometer material.
In the present embodiment, Noctilucent material is green noctilucent powder, comprises 55 grams of calcium sulfide, 1 gram of Potassium monosulfide., sodium sulfide 10
Gram, 12 grams of barium nitrate, 13 grams of indium nitrate.Dyestuff may be selected organic dyestuff, and dyestuff can make anode oxide film 10 catch color.Dye
Color processes and can carry out at normal temperatures, if anode oxide film 10 is light color after dyeing, dyeing time can be less than 2 minutes, if dyeing
Anode oxide film 10 is dark color afterwards, and dyeing time can be at 5 ~ 10 minutes.It is appreciated that in other embodiments, can be according to need
Select other colors and the Noctilucent material of corresponding composition.
Specifically, the step that dyeing is processed specifically includes：First metal base 100 is immersed in molten containing Noctilucent material 30
In liquid, so that Noctilucent material 30 is respectively filled in multiple fenestras 20；Again metal base 100 is immersed in dye solution, so that
Dyestuff 40 is respectively filled in multiple fenestras 20.As shown in Fig. 2 Noctilucent material 30 is located at fenestra 20 bottom, dyestuff 40 is located at fenestra
20 tops.
In another embodiment, the step that dyeing is processed specifically includes：First Noctilucent material 30 is mixed with dyestuff 40
After make solution, then metal base 100 is immersed in mixed solution and is dyeed.It should be noted that due to noctilucence
Material 30 may affect the color of anode oxide film 10, when mixing Noctilucent material 30 with dyestuff 40, needs noctilucence material
Material 30 recalls required color together with dyestuff 40, to avoid Noctilucent material 30 that the color of anode oxide film 10 is interfered.
Step S104：Sealing pores are carried out to metal base 100.
In the step of sealing pores, the metal base 100 after dyeing is immersed in sealing pores liquid, sealing pores liquid
In hole sealing agent hydrolyze in the fenestra 20 of anode oxide film 10 and produce precipitation, be filled with fenestra 20 so that dyeing after
Fenestra 20 is closed, and by Noctilucent material and the fixing of dye in fenestra 20.Sealing pores can make the anode oxide film after dyeing
10 anti-wear performance and decay resistance are more preferably.In the present embodiment, sealing pores are carried out at normal temperatures, in sealing pores liquid
Hole sealing agent be Nickel difluoride, the sealing of hole time be 30 minutes.It is appreciated that in other embodiments, also may be used in sealing pores liquid
Containing hole sealing agents such as nickel acetate, nickel sulfate, cobaltous sulfates.
Above-mentioned processing method can make metal base 100 make outside electronic installation after anodized, dyeing are processed
Shell 200.Because the surface of electronic device housing 200 includes anode oxide film 10, anode oxide film 10 can lift protection electronics
The corrosion resistance of crust of the device 200 and wearability, may also provide decorative effect attractive in appearance.Further, since electronic device housing 200
Anode oxide film 10 in comprise dyestuff and Noctilucent material simultaneously, dyestuff can make electronic device housing 200 colour, and noctilucence material
Material can automatic luminous in the dark, thus the electronic device housing 200 that above-mentioned processing method is obtained has the function of noctilucence, side
Just user searches out described electronic device housing 200 in the dark.
It is appreciated that in another embodiment, also including the step of pretreatment before anode between step S101 and S102
Suddenly, to remove defect, greasy dirt or the natural oxide film on metal base 100 surface.
Before anode, pretreatment may include fat, alkali is stung or one or more of the step such as chemical polishing, and wherein every two
The step that may include cleaning between individual adjacent step.In addition, according to actual needs, the sun such as mechanical polishing, sandblasting can also be increased
Extremely front pretreatment, so that metal base 100 can assume different surface effects after dyeing process.
It is appreciated that after step S102 and step S103, the step that also can add cleaning.
Referring to Fig. 2 and Fig. 3, in second embodiment of the invention, the processing method of electronic device housing 200 includes
Following steps：
Step S301：One metal base 100 is provided.
Metal base 100 is aluminum alloy base material, but not limited to this.Metal base 100 is alternatively aluminium base, magnesium/magnesium alloy
Base material, or titanium/titanium alloy base material etc..
Step S302：First time anodized is carried out to metal base 100, to be formed on metal base 100 surface
Anode oxide film 10, anode oxide film 10 has multiple fenestras 20.
In the step of first time anodized, anodized can be carried out using DC current, and adopt sulfur
Acid is electrolyte.It is preferred that the thickness of anode oxide film 10 is less than or equal to 20 m.It is preferred that first time anodized
Temperature be 20 DEG C, the time be 20 ~ 30 minutes, oxidation voltage be 13 ~ 14V.
Step S303：Dyeing process is carried out to metal base 100, to insert in multiple fenestras 20 of anode oxide film 10
Noctilucent material 30 and dyestuff 40.
Step S304：First time sealing pores are carried out to metal base 100.
In the step of first time sealing pores, the metal base 100 after dyeing is immersed in sealing pores liquid, makes dye
The fenestra 20 of the anode oxide film 10 after color process is closed.
Above-mentioned steps S301 ~ S304 is identical with step S101 in first embodiment ~ S104, will not be described here.
S305：High optical processing is carried out to metal base 100.
To carry out high optical processing at the arris of metal base 100 so that become at arris rule smooth, and have minute surface effect
Really, the details position making electronic device housing 200 is beautified effectively.In the present embodiment, the method for high optical processing can
For Milling Process, but not limited to this.
S306：Second anodized is carried out to metal base 100.
Second anodized can form second plate oxide-film on the surface of metal base 100（Not shown）.
Because high optical processing can remove the anode oxide film 10 at electronic device housing 200 arris, so needing to metal base 100
Surface carries out second anodized, so that being equipped with anode oxide film on the surface of whole metal base 100, improving and producing
The corrosion resistance of product.Second anodized equally carries out anodic oxidation, the temperature of anodized using DC current
Spend for 20 DEG C, the time is 8 ~ 10 minutes, oxidation voltage is 13 ~ 14V.
S307：Second sealing pores is carried out to metal base 100.
In the step of second sealing pores, metal base 100 is immersed in sealing pores liquid, so that second plate is aoxidized
Membrane closure, to improve the wearability of electronic device housing 200 further.
In another embodiment, in order that anode oxide film 10 is consistent with second plate oxide-film, forming the
After two anode oxide films, also can carry out dyeing process to second plate oxide-film so that Noctilucent material and dyestuff insert described
In the fenestra of second plate oxide-film, finally again sealing pores are carried out to second plate oxide-film.Second plate oxide-film is entered
The method that row dyeing is processed can be identical with step S103.
It is appreciated that between step S301 and S302, the step that also includes pretreatment before anode, to remove metal base
The defect on 100 surfaces, greasy dirt or natural oxide film.Before anode pretreatment may include fat, alkali sting or the step such as chemical polishing in
One or more, and the step that wherein may include cleaning between the adjacent step of each two.In addition, according to actual needs,
Pretreatment before the anodes such as mechanical polishing, sandblasting can be increased so that metal base 100 dyeing process after can present different
Surface effect.
It is appreciated that after step S302 and step S303, the step that also can add cleaning.
It is appreciated that when the wearability to electronic device housing 200 requires relatively low, step S307 can be omitted.
In this second embodiment, the step including high optical processing due to the processing method of electronic device housing 200, can
At the arris making electronic device housing 200, there is mirror effect, so that the details position of electronic device housing 200 is obtained effectively beautiful
Change.In addition, the step that above-mentioned processing method includes second anodized after high optical processing, whole electronics dress can be made
The surface putting shell 200 is all covered with anode oxide film, thus lifting corrosion resistance and the wearability of electronic device housing 200.
Referring once again to Fig. 2, the present invention provides a kind of electronic device housing 200, including metal base 100 and located at metal
The anode oxide film 10 on base material 100 surface, described anode oxide film 10 includes multiple fenestras 20, fills respectively in multiple fenestras 20
There are Noctilucent material 30 and dyestuff 40.
Because the surface of electronic device housing 200 is formed with anode oxide film 10, anode oxide film 10 can lift electronics
The corrosion resistance of crust of the device 200 and wearability.In addition, being separately filled with noctilucence material in multiple fenestras 20 of anode oxide film 10
Material 30 and dyestuff 40, Noctilucent material 30 can absorb various light and heats, be converted into luminous energy storage, then automatically send out in the dark
Light, thus described electronic device housing 200 has the function of noctilucence, is easy to user and finds in the dark outside described electronic installation
Shell 200.
The present invention also provides a kind of electronic installation（Not shown）, including above-mentioned electronic device housing 200.Described electronic installation
Shell 200 can be used as the cell rear cover of electronic installation, or the back cover as electronic installation, but not limited to this.Electronic installation has
There are whole beneficial effects of above-mentioned electronic device housing 200, will not be described here.
Finally it should be noted that above example is only in order to illustrate technical scheme and unrestricted, although reference
Preferred embodiment has been described in detail to the present invention, it will be understood by those within the art that, can be to the present invention's
Technical scheme is modified or equivalent, without deviating from the spirit and scope of technical solution of the present invention.
Claims (10)
1. a kind of processing method of electronic device housing is it is characterised in that include：
One metal base is provided；
Anodized is carried out to described metal base, so that anode oxide film, institute to be formed on the surface of described metal base
State anode oxide film and there are multiple fenestras；
Dyeing process is carried out to described metal base, to insert Noctilucent material and dye in multiple fenestras of described anode oxide film
Material；
Sealing pores are carried out to described metal base.
2. the processing method of electronic device housing as claimed in claim 1 is it is characterised in that contaminate to described metal base
The step that color is processed, specifically includes：
Described metal base is immersed in the solution containing Noctilucent material；
Described metal base is immersed in dye solution, thus described Noctilucent material is located at the bottom of described fenestra, described dyestuff
Top positioned at described fenestra.
3. the processing method of electronic device housing as claimed in claim 1 is it is characterised in that contaminate to described metal base
The step that color is processed, specifically includes：
Solution is made with dyestuff after Noctilucent material is mixed；
Described metal base is immersed in described mixed solution.
4. the processing method of electronic device housing as claimed in claim 1 is it is characterised in that carrying out to described metal base
Before anodized, first pretreatment before anode is carried out to described metal base, before described anode pretreatment include fat,
Alkali is stung or one or more of chemical polishing.
5. the processing method of electronic device housing as claimed in claim 1 is it is characterised in that adopt DC current to described gold
Belong to base material and carry out anodized.
6. the processing method of electronic device housing as claimed in claim 1 is it is characterised in that carrying out to described metal base
In the step of anodized, the voltage of described anodized is less than or equal to 16 volts, described anode oxide film
Thickness is less than or equal to 20 microns.
7. the processing method of electronic device housing as claimed in claim 1 is it is characterised in that carrying out to described metal base
After sealing pores, also include：
High optical processing is carried out to described metal base；
Second anodized is carried out to described metal base.
8. the processing method of electronic device housing as claimed in claim 7 is it is characterised in that carrying out to described metal base
After second anodized, also include：
Described metal base is carried out with second dyeing process；
Second sealing pores is carried out to described metal base.
9. a kind of electronic device housing, the anode oxide film including metal base and located at described metallic substrate surface, described sun
Pole oxide-film includes multiple fenestras, is separately filled with Noctilucent material and dyestuff in the plurality of fenestra.
10. a kind of electronic installation, including electronic device housing, described electronic device housing includes metal base and located at described gold
Belong to the anode oxide film of substrate surface, described anode oxide film includes multiple fenestras, is separately filled with night in the plurality of fenestra
Luminescent material and dyestuff.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610840705.3A CN106435687A (en) | 2016-09-22 | 2016-09-22 | Electronic device shell, processing method thereof and electronic device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610840705.3A CN106435687A (en) | 2016-09-22 | 2016-09-22 | Electronic device shell, processing method thereof and electronic device |
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| CN108486628A (en) * | 2018-03-22 | 2018-09-04 | 富士智能机电（珠海）有限公司 | A kind of pre- sealing of hole secondary oxidation technique |
| CN110552041A (en) * | 2019-09-16 | 2019-12-10 | 歌尔股份有限公司 | Surface treatment method for metal material |
| CN110552041B (en) * | 2019-09-16 | 2021-02-19 | 歌尔股份有限公司 | Surface treatment method for metal material |
| CN111549365A (en) * | 2020-04-30 | 2020-08-18 | 广州上仕工程管理有限公司 | Surface treatment process for aluminum product |
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