CN106435481A - 非制冷焦平面探测器封装用电极薄膜工艺技术 - Google Patents

非制冷焦平面探测器封装用电极薄膜工艺技术 Download PDF

Info

Publication number
CN106435481A
CN106435481A CN201610916746.6A CN201610916746A CN106435481A CN 106435481 A CN106435481 A CN 106435481A CN 201610916746 A CN201610916746 A CN 201610916746A CN 106435481 A CN106435481 A CN 106435481A
Authority
CN
China
Prior art keywords
film
layer
nickel
cleaning
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610916746.6A
Other languages
English (en)
Other versions
CN106435481B (zh
Inventor
袁俊
赵鹏
黎秉哲
何雯瑾
龚晓霞
信思树
冯江敏
苏玉辉
莫镜辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunming Institute of Physics
Original Assignee
Yunnan North Queensland Photoelectric Technology Development Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yunnan North Queensland Photoelectric Technology Development Co Ltd filed Critical Yunnan North Queensland Photoelectric Technology Development Co Ltd
Priority to CN201610916746.6A priority Critical patent/CN106435481B/zh
Publication of CN106435481A publication Critical patent/CN106435481A/zh
Application granted granted Critical
Publication of CN106435481B publication Critical patent/CN106435481B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

非制冷焦平面探测器封装用电极薄膜工艺技术，尤其是一种可靠性高，寿命长的非制冷焦平面探测器封装用电极薄膜工艺技术。本发明的工艺技术是在探测器窗口上顺序沉积五层金属膜，第一层为铬膜，第二层为铬镍合金膜，第三层为镍膜，第四层为镍金膜，第五层金膜，其中第二层和第四层膜系为合金膜，即在第一层、第三层膜系和第三层、第五层膜系之间同时生长两种不同类型的薄膜，达到两种金属膜互扩散，从而使得层层膜系间强度高、焊接后不会产生空洞，提高了组件的寿命和可靠性。本发明在各层电极膜之间提供一层过渡层来增加层与层间的附着力，焊接后，焊料与焊接层产生互扩散后，焊接后不会产生空洞，提高了组件的寿命和可靠性。

Description

非制冷焦平面探测器封装用电极薄膜工艺技术
技术领域
本发明涉及非制冷焦平面探测器，尤其是一种可靠性高，寿命长的非制冷焦平面探测器封装用电极薄膜工艺技术。
背景技术
由于非制冷焦平面探测器具有不需制冷、成本低、功耗小、重量轻、小型化、启动快、使用方便以及灵活等优点，同时已经由小规模发展到中、大规模的320×240和640×480阵列，在未来的几年内有望获得大规模的1024×1024的非制冷焦平面阵列，像元尺寸也由50um减小到17um，使得焦平面灵敏度进一步提高。这种非制冷焦平面探测器在军用和民用领域应用越来越广泛，部分型号产品已经装备部队，尤其在轻武器瞄准具、驾驶员视力增强器、单兵头盔式观瞄、手持式热像仪等轻武器，以及部分导弹的红外成像末端制导，这些应用对探测器的可靠性要求越来越高。
影响非制冷焦平面探测器性能的主要因素就是探测器封装的密封性，而影响该密封性的主要因素就在于红外窗口的电极薄膜，所以对非制冷焦平面探测器封装时焊接所使用的电极薄膜的可靠性、附着力要求越来越高，特别在高温焊接时，电极薄膜系间非常容易发生相互扩散的情况，导致电极薄膜之间产生空洞，从而影响探测器组件的寿命和可靠度。
目前常用的电极薄膜主要是钛镍金、钛镍银、铬镍金、铬镍银这四种电极薄膜膜系，而这四种膜系在窗口焊接过程中，会出现两方面问题：一是由于窗口焊接是一个热熔焊接，焊接时温度较高，焊接过程中会产生一个热应力，使得膜系之间拉开，从而产生脱膜现象；二是由于各膜系在高温焊接过程中存在一个互扩算过程，从而导致空洞产生。这两方面的问题，会使得非制冷焦平面组件的寿命和可靠性下降，或者直接就在焊接过程中就失效。
发明内容
本发明所要解决的就是现有电极薄膜在高温焊接过程中，使得膜系之间产生脱膜，以及各膜系产生空洞的问题，提供一种可靠性高，寿命长的非制冷焦平面探测器封装用电极薄膜工艺技术。
本发明的非制冷焦平面探测器封装用电极薄膜工艺技术，其特征在于该工艺技术是在探测器窗口上顺序沉积五层金属膜，第一层为铬膜，第二层为铬镍合金膜，第三层为镍膜，第四层为镍金膜，第五层金膜，其中第二层和第四层膜系为合金膜，即在第一层、第三层膜系和第三层、第五层膜系之间同时生长两种不同类型的薄膜，达到两种金属膜互扩散，从而使得层层膜系间强度高、焊接后不会产生空洞，提高了组件的寿命和可靠性。
所述的工艺技术制备步骤为：
1）探测器窗口镀膜前处理：
对需要镀膜的探测器窗口进行湿法清洗和干法清洗，湿法清洗采用超声波有机溶液进行清洗、干法清洗采用等离子清洗，有机溶液包括UP级的甲苯、丙酮、无水乙醇，具体清洗步骤如下：
a、将需清洗的探测器窗口放置于清洗专用工装内；
b、甲苯清洗一次，丙酮两次，无水乙醇清洗两次，每次清洗时间为10min-15min；
c、将探测器窗口放入等离子清洗剂，通入氩离子进行清洗，清洗时间为10-15min，清洗功率200W-300W，氩离子流量60-80sccm，反应压强150-250mTorr；
2）金属膜系生长；
a、在探测器窗口上蒸镀铬膜，蒸发速率为2A/S，厚度为100nm；
b、在铬膜上同时蒸镀铬膜和镍膜，铬膜和镍膜的蒸发速率均为1A/S，厚度为50nm；
c、在铬镍合金膜上蒸镀镍膜，蒸发速率为2A/S，厚度为450nm；
d、在镍膜上同时蒸镀镍膜和金膜，镍膜和金膜蒸发速率均为1A/S，厚度为50nm；
e、在镍金合金膜上蒸镀金膜，蒸发速率为2.5A/S，厚度为250nm，完成电极膜制备。
本发明的非制冷焦平面探测器封装用电极薄膜工艺技术，用于非制冷焦平面探测器金属封装和陶瓷封装的窗口焊接用电极膜制备，特别是用于氧化钒非制冷焦平面探测器金属封装窗口焊接用电极的制备工艺中；在各层电极膜之间提供一层过渡层来增加层与层间的附着力，从而使得层层膜系间强度高，焊接后，焊料与焊接层产生互扩散后，焊接后不会产生空洞，提高了组件的寿命和可靠性。本发明可配合掩膜、光刻法，获得公差精度较高的图案，电极膜各层厚度可控，能够满足非制冷焦平面探测器金属封装、陶瓷封装、晶圆级封装等的高可靠性与长寿命所需的真空工作环境的设计需求。
具体实施方式
实施例1：一种非制冷焦平面探测器封装用电极薄膜工艺技术，在探测器窗口上顺序沉积五层金属膜，第一层为铬膜，第二层为铬镍合金膜，第三层为镍膜，第四层为镍金膜，第五层金膜，其中第二层和第四层膜系为合金膜，即在第一层、第三层膜系和第三层、第五层膜系之间同时生长两种不同类型的薄膜，达到两种金属膜互扩散，从而使得层层膜系间强度高、焊接后不会产生空洞，提高了组件的寿命和可靠性。
本工艺技术的制备步骤为：
1）探测器窗口镀膜前处理：
对需要镀膜的探测器窗口进行湿法清洗和干法清洗，湿法清洗采用超声波有机溶液进行清洗、干法清洗采用等离子清洗，有机溶液包括UP级的甲苯、丙酮、无水乙醇，具体清洗步骤如下：
a、将需清洗的探测器窗口放置于清洗专用工装内；
b、甲苯清洗一次，丙酮两次，无水乙醇清洗两次，每次清洗时间为10min-15min；
c、将探测器窗口放入等离子清洗剂，通入氩离子进行清洗，清洗时间为10-15min，清洗功率200W-300W，氩离子流量60-80sccm，反应压强150-250mTorr；
2）金属膜系生长；
a、在探测器窗口上蒸镀铬膜，蒸发速率为2A/S，厚度为100nm；
b、在铬膜上同时蒸镀铬膜和镍膜，铬膜和镍膜的蒸发速率均为1A/S，厚度为50nm；
c、在铬镍合金膜上蒸镀镍膜，蒸发速率为2A/S，厚度为450nm；
d、在镍膜上同时蒸镀镍膜和金膜，镍膜和金膜蒸发速率均为1A/S，厚度为50nm；
e、在镍金合金膜上蒸镀金膜，蒸发速率为2.5A/S，厚度为250nm，完成电极膜制备。

Claims (2)

1.一种非制冷焦平面探测器封装用电极薄膜工艺技术，其特征在于该工艺技术是在探测器窗口上顺序沉积五层金属膜，第一层为铬膜，第二层为铬镍合金膜，第三层为镍膜，第四层为镍金膜，第五层金膜，其中第二层和第四层膜系为合金膜，即在第一层、第三层膜系和第三层、第五层膜系之间同时生长两种不同类型的薄膜，达到两种金属膜互扩散，从而使得层层膜系间强度高、焊接后不会产生空洞，提高了组件的寿命和可靠性。
2.如权利要求1所述的一种非制冷焦平面探测器封装用电极薄膜工艺技术，其特征在于所述的工艺技术制备步骤为：
1）探测器窗口镀膜前处理：
对需要镀膜的探测器窗口进行湿法清洗和干法清洗，湿法清洗采用超声波有机溶液进行清洗、干法清洗采用等离子清洗，有机溶液包括UP级的甲苯、丙酮、无水乙醇，具体清洗步骤如下：
a、将需清洗的探测器窗口放置于清洗专用工装内；
b、甲苯清洗一次，丙酮两次，无水乙醇清洗两次，每次清洗时间为10min-15min；
c、将探测器窗口放入等离子清洗剂，通入氩离子进行清洗，清洗时间为10-15min，清洗功率200W-300W，氩离子流量60-80sccm，反应压强150-250mTorr；
2）金属膜系生长；
a、在探测器窗口上蒸镀铬膜，蒸发速率为2A/S，厚度为100nm；
b、在铬膜上同时蒸镀铬膜和镍膜，铬膜和镍膜的蒸发速率均为1A/S，厚度为50nm；
c、在铬镍合金膜上蒸镀镍膜，蒸发速率为2A/S，厚度为450nm；
d、在镍膜上同时蒸镀镍膜和金膜，镍膜和金膜蒸发速率均为1A/S，厚度为50nm；
e、在镍金合金膜上蒸镀金膜，蒸发速率为2.5A/S，厚度为250nm，完成电极膜制备。
CN201610916746.6A 2016-10-21 2016-10-21 非制冷焦平面探测器封装用电极薄膜工艺技术 Active CN106435481B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610916746.6A CN106435481B (zh) 2016-10-21 2016-10-21 非制冷焦平面探测器封装用电极薄膜工艺技术

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610916746.6A CN106435481B (zh) 2016-10-21 2016-10-21 非制冷焦平面探测器封装用电极薄膜工艺技术

Publications (2)

Publication Number Publication Date
CN106435481A true CN106435481A (zh) 2017-02-22
CN106435481B CN106435481B (zh) 2020-06-05

Family

ID=58175812

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610916746.6A Active CN106435481B (zh) 2016-10-21 2016-10-21 非制冷焦平面探测器封装用电极薄膜工艺技术

Country Status (1)

Country Link
CN (1) CN106435481B (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101752456A (zh) * 2008-12-22 2010-06-23 上海欧菲尔光电技术有限公司 红外焦平面探测器封装窗口的制作工艺
CN102002672A (zh) * 2009-08-31 2011-04-06 上海欧菲尔光电技术有限公司 红外焦平面封装窗口的金属化方法
CN103412350A (zh) * 2013-08-16 2013-11-27 中国船舶重工集团公司第七一七研究所 一种多波段增强型金属反射膜及其制备方法
CN104090312A (zh) * 2014-07-30 2014-10-08 中国船舶重工集团公司第七一七研究所 一种高附着力红外金属反射膜及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101752456A (zh) * 2008-12-22 2010-06-23 上海欧菲尔光电技术有限公司 红外焦平面探测器封装窗口的制作工艺
CN102002672A (zh) * 2009-08-31 2011-04-06 上海欧菲尔光电技术有限公司 红外焦平面封装窗口的金属化方法
CN103412350A (zh) * 2013-08-16 2013-11-27 中国船舶重工集团公司第七一七研究所 一种多波段增强型金属反射膜及其制备方法
CN104090312A (zh) * 2014-07-30 2014-10-08 中国船舶重工集团公司第七一七研究所 一种高附着力红外金属反射膜及其制备方法

Also Published As

Publication number Publication date
CN106435481B (zh) 2020-06-05

Similar Documents

Publication Publication Date Title
CN102157462B (zh) 晶片封装体及其制造方法
CN101894831A (zh) 紫外-红外双波段探测器及其制作方法
TWI618805B (zh) 沈積罩幕、沈積罩幕的製造方法及有機ｅｌ顯示裝置的製造方法
CN106197718B (zh) 一种薄膜温度传感器及制备方法
CN102651350B (zh) 晶片封装体
CN102951594B (zh) 用于微光机电系统真空封装的管壳及其制作方法
KR100771464B1 (ko) 유기 ｅｌ 디스플레이 및 그 제조 방법
CN101913553B (zh) 一种体硅刻蚀和金硅键合复合工艺方法
CN101692428A (zh) 工作温度可控混合集成电路的集成方法
CN108529553B (zh) 一种石墨烯高温压力传感器封装方法
CN103178076A (zh) 红外光与可见光转换器件
CN102226721A (zh) 一种非制冷红外探测焦平面器件
CN102569678A (zh) 一种顶发射oled的复合薄膜封装方法
CN101419092B (zh) 平面化热绝缘结构的热释电红外探测器的制备方法
EP2828629A1 (en) Electromagnetic radiation micro device, wafer element and method for manufacturing such a micro device
CN109524570A (zh) 一种高对比度的有机电致发光器件及其制备方法
CN110148571A (zh) 一种八英寸红外探测器封装窗口及其制备方法
CN106435481A (zh) 非制冷焦平面探测器封装用电极薄膜工艺技术
CN106185784B (zh) 基于湿法预释放结构的mems红外光源及其制备方法
KR20100040408A (ko) 초소형 인체 감지용 적외선 센서 및 그의 제조방법
CN107963607A (zh) 一种全覆盖吸气剂晶圆级电子元件及其封装方法
Yokota et al. Air‐Stable Ultra‐Flexible Organic Photonic System for Cardiovascular Monitoring
CN109742254A (zh) 一种高效率的oled微显示器件及制造方法
CN101986429B (zh) 芯片封装体及其形成方法
CN103072941B (zh) 基于表面牺牲层工艺的mems器件自封装制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20200525

Address after: 650223 No. 31 East Road, Kunming, Yunnan

Applicant after: KUNMING INSTITUTE OF PHYSICS

Address before: 201, No. 31, Jiaochang East Road, Kunming City, Yunnan Province 650000

Applicant before: YUNNAN BEIFANG KUNWU PHOTOELECTRIC TECHNOLOGY DEVELOPMENT Co.,Ltd.