CN106433479A - Control method for controlling surface roughness of cobalt barrier layer of multi-layer copper wiring - Google Patents
Control method for controlling surface roughness of cobalt barrier layer of multi-layer copper wiring Download PDFInfo
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- CN106433479A CN106433479A CN201610576241.XA CN201610576241A CN106433479A CN 106433479 A CN106433479 A CN 106433479A CN 201610576241 A CN201610576241 A CN 201610576241A CN 106433479 A CN106433479 A CN 106433479A
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- 230000003746 surface roughness Effects 0.000 title claims abstract description 36
- 230000004888 barrier function Effects 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 27
- 229910017052 cobalt Inorganic materials 0.000 title claims abstract description 24
- 239000010941 cobalt Substances 0.000 title claims abstract description 24
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title claims abstract description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 18
- 239000010949 copper Substances 0.000 title claims abstract description 18
- 238000005498 polishing Methods 0.000 claims abstract description 76
- 239000002738 chelating agent Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 9
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 9
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 9
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- 239000012530 fluid Substances 0.000 claims description 36
- 239000004094 surface-active agent Substances 0.000 claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 239000008367 deionised water Substances 0.000 claims description 16
- 229910021641 deionized water Inorganic materials 0.000 claims description 16
- 238000001465 metallisation Methods 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 6
- BYACHAOCSIPLCM-UHFFFAOYSA-N 2-[2-[bis(2-hydroxyethyl)amino]ethyl-(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(CCO)CCN(CCO)CCO BYACHAOCSIPLCM-UHFFFAOYSA-N 0.000 claims description 5
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 3
- -1 Polyoxyethylene Polymers 0.000 claims description 3
- 150000003973 alkyl amines Chemical class 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 3
- 239000013522 chelant Substances 0.000 claims description 3
- HXMVNCMPQGPRLN-UHFFFAOYSA-N 2-hydroxyputrescine Chemical compound NCCC(O)CN HXMVNCMPQGPRLN-UHFFFAOYSA-N 0.000 claims description 2
- 241000040710 Chela Species 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 2
- 238000007517 polishing process Methods 0.000 abstract description 2
- 230000002378 acidificating effect Effects 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 29
- 239000000243 solution Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000002156 adsorbate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention belongs to the field of chemical mechanical polishing and particularly relates to a control method for controlling the surface roughness of the cobalt barrier layer of a multi-layer copper wiring. According to the method, firstly, an alkaline polishing solution is prepared. Secondly, the polishing treatment is conducted for 1-5 minutes under the following process conditions of flow rate: 100-500 ml/min; temperature: 15-30 DEG C; polishing head rotation speed: 57-150 rpm; polishing disk rotation speed: 63-150 rpm; and polishing pressure: 6.89-27.56 kpa. The alkaline polishing solution comprises the following components in weight percentage relative to the total weight of the alkaline polishing solution: 0.1-1% of chelating agent, 1-5% of nonionic surfactant and 1% of SiO2, wherein the final pH value of the polishing solution is 8-12. The above method overcomes the defect in the prior art that during the conventional chemical and mechanical polishing process of the copper wiring, the surface roughness of the cobalt barrier layer is mainly controlled by an acidic polishing solution containing an oxidizing agent.
Description
Technical field
The invention belongs to CMP art, particularly relate to a kind of multi-layer copper metallization cobalt barrier layer surface roughness
Control method.
Background technology
Nearly ten years, Giga large scale integration (GLSI) great scale integrated characteristic size experience
From 0.18 μm to the development course of 20nm, this indicate integrated circuit oneself through entering into the nanoscale epoch.At present, the U.S.
Inter company integrated circuit fabrication process has reached 14nm technology node, integrated level reach DRAM64G or 90,000,000 transistors/
cm2.Semi-conductor industry makes it propose chemical-mechanical planarization (CMP) technique of crystal column surface with developing rapidly of Moore's Law
Increasingly strict requirements, mainly due to the further miniaturization of device fabrication size to multi-layer copper metallization surface finish requirements
Improve further and the continually introducing of Novel stop layer material.After 14nm and techniques below node, copper-connection
The number of plies reaches more than 13 layers, also requires that, to the barrier layer of protection thin copper film, the blocking effect not only had, more requires there is less thickness
Degree.Cobalt has good development prospect because its feature such as high chemical stability, high rigidity becomes Novel stop layer material
In GLSI multilayer wiring CMP, surface roughness is an important parameter during great scale integrated circuit manufactures,
Being used for characterizing the quality of CMP front and rear surfaces quality, the surface roughness after polishing is too high, can cause noise increase, electrical characteristics one
Cause property difference, device frequency characteristic can be affected as increased RC time delay etc., thus affect integrated level, reliability, quality product rate and fall
Surface quality after the lower explanation polishing of low cost surface roughness is higher, also illustrates that the polishing fluid using and process conditions are
Preferably select.So control table surface roughness is always the technical barrier of CMP in great scale integrated circuit manufacturing.
Patent CN102516875B and CN102304327A are each provided with the polishing of a kind of glossing based on metal Co
Liquid, this polishing fluid is acidity (pH value range 3-5), comprises oxidant, abrasive grains, chelating agent respectively, and thiazole presses down
Preparation, and the water of surplus.But experiment discovery, in the acid polishing slurry containing oxidant, barrier material cobalt is easy to molten
Solve, cause the desorption of ditch buried copper, and make the surface roughness of cobalt very big.So developing the control of a kind of cobalt surface roughness
Method is very necessary.
Content of the invention
It is an object of the invention to overcome the deficiencies in the prior art, during solving existing copper metallization chemical mechanical polishing
The control cobalt barrier layer surface roughness many employings acid polishing slurry existing and the problem comprising oxidant, and a kind of multilayer is provided
The control method of thin copper film cobalt barrier layer surface roughness.
The present invention for achieving the above object, by the following technical solutions：
The control method of a kind of multi-layer copper metallization cobalt barrier layer surface roughness, comprises the steps：
1) it is formulated for reducing the polishing fluid of GLSI multi-layer copper metallization cobalt barrier layer surface roughness:
A. chelating agent is diluted 10-100 times by deionized water；
B. nonionic surfactant is inclined to step a) in the solution being formed, be constantly stirred during this；
C. by Si0 that particle diameter is 20-50nm2It is configured to the abrasive water colloidal sol that mass fraction is 0.1-20%；
D. it is poured into the solution that step b) obtains in the solution that step c) obtains, is constantly stirred during this, treat
Deionized water is added to carry out constant volume after being thoroughly mixed；
2) at flow 100-500ml/min, temperature 15-30 DEG C, ramming head rotating speed are 57-150rpm, rotating speed of dumping is 63-
150rpm, polish pressure be 6.89-27.56kpa process conditions under be polished 1-5min；
Wherein, described amount of chelant accounts for the 0.1%-1% of polishing fluid gross mass；The use of nonionic surface active agent
The 1-5% that amount is polishing fluid gross mass；Described Si02Consumption be the 0.05%-10% of polishing fluid gross mass；Described throwing
The final pH value of light liquid is 8-12；
Described nonionic surface active agent is OII-7((C10H21-C6H4-O-CH2CH2O)7-H)、OII-10((C10H21-
C6H4-O-CH2CH2O)10-H)、0-20(C12-18H25-37-C6H4-O-CH2CH2O)70-H), JFC, AEO,
Polyoxyethylene alkyl amine, one or several mixing of alkylol phthalein amine.
Described chelating agent is triethanolamine, diethylamine, tetrahydroxyethyl-ethylene diamine, beta-hydroxyethyl ethylenediamine, ethylenediamine tetraacetic
One or several mixing of acetic acid-four-tetrahydroxyethyl-ethylene diamine.
Preferably, chelating agent deionized water extension rate is 20 times, and chelating agent is tetrahydroxyethyl-ethylene diamine, and chelating agent is used
Amount accounts for the 0.5% of polishing fluid gross mass, and nonionic surfactant is OII-10((C10H21-C6H4-O-CH2CH2O)10-H), non-
Ionic surfactant consumption is the 2% of polishing fluid gross mass, described Si02Average grain diameter is 20-50nm, and abrasive material is water-soluble
The mass fraction of glue is 2%, Si02Consumption accounts for the 1% of polishing fluid gross mass, and the final ph of described polishing fluid is 9-10；
Described step 2) in polishing technological conditions be：
Operating pressure：6.89kpa；Rubbing head/polishing disk rotating speed：57/63rpm；Flow:300mL/min, polishing time is
1min, temperature 25 DEG C.
Compared with prior art, the invention has the beneficial effects as follows：
Described nonionic surface active agent has stronger penetrating power, and it can penetrate into wafer surface and adsorbate
Between, and constantly extend, and adsorbate is held up, reactant is transported away by beneficially polishing fluid with product；Non-ionic
Surfactant molecule utilizes wetting action quickly to open at slice, thin piece surface spreading, forms the protective layer of one layer of even compact, favorably
Clean after polishing；In polishing fluid, nonionic surface active agent can accelerate to polish the mass transfer of product so that wafer
Removal rate at barrier layer surface convex-concave is different, is conducive to reducing concavo-convex place difference of height, reduces surface roughness, it is achieved that throw
Optical surface planarizes.
Meanwhile, described abrasive material is the aqueous silica sol of particle diameter 20-50nm.Nanoscale SiO2Colloidal sol grinds as polishing fluid
Material, its particle diameter is little, concentration is high, hardness is little, little to copper and load injury tolerance, good dispersion degree, can reach two-forty, high smooth, low
Damage polish, pollutes little, solves many drawbacks such as the scuffing of abrasive hardness great Yi, easy precipitation.
Described chelating agent is triethanolamine, diethylamine, tetrahydroxyethyl-ethylene diamine, beta-hydroxyethyl ethylenediamine, ethylenediamine tetraacetic
One or several of acetic acid-four-tetrahydroxyethyl-ethylene diamine.Chelating agent, as polishing fluid pH adjusting agent, can play buffer
Effect, is also used as complexing agent simultaneously and becomes water-soluble big molecular product with complexing of metal ion, makes product little
Mechanism under can depart from finished surface.
In a word, the present invention has selected suitable polishing fluid configuration process, and this process will not produce gel during configuration
Phenomenon, facilitate the configuration of solution and the carrying out of follow-up polishing process.This polishing fluid does not contains oxidant, overcomes polishing fluid
Stability problem, meanwhile, polishing fluid for alkalescence, overcome barrier material cobalt be easy to dissolve, cause the desorption of ditch buried copper,
And make the problem that the surface roughness of cobalt is very big.
Brief description
Fig. 1 is that nonionic surface active agent accelerates polishing product quality transmission schematic diagram；
Fig. 2 is that nonionic surface active agent affects schematic diagram to surface roughness；
Fig. 3 is that variable concentrations nonionic surface active agent affects schematic diagram to cobalt barrier layer surface roughness.
Detailed description of the invention
In order to make those skilled in the art be more fully understood that technical scheme, below in conjunction with the accompanying drawings and
The present invention is described in further detail for good embodiment.
Operation principle：As it is shown in figure 1, for the surface roughness reducing, the present invention introduces nonionic in polishing fluid
Type surfactant (i.e. active matter in figure), this is owing to nonionic surface active agent has stronger penetrating power, its
Can penetrate between polished surface and adsorbate, and constantly extend, the product product that beneficially polishing is carried by polishing fluid
Transport away.Nonionic surface active agent can accelerate the mass transfer of the reactant at convex place, and recess is due to viscous flow thickness,
Reduce mass transfer.Existence just because of nonionic agent so that cobalt stops the removal speed at synusia surface relief
Rate is different, as in figure 2 it is shown, fast in convex place 1,2,3 removal rate, at recess 4,5,6,7 removal rates are slow.Be conducive to reducing recessed
Convex place difference of height, reduces surface roughness.
In addition, the hydrophilic radical of nonionic surface active agent almost accounts for the 2/3-4/5 of whole molecule, add in polishing fluid
Entering nonionic surface active agent, it utilizes wetting action quickly to open at slice, thin piece surface spreading, forms the guarantor of one layer of even compact
Sheath, meanwhile, during nonionic surface active agent Molecular Adsorption, based on being connected with solid with nonpolar hydrocarbon chain, and hydrophily
Group then extend in water, define prevent polish product absorption physical barrier, be conducive to polish after clean.
Embodiment 1：Put into 1g chelating agent diethylamine in 100g deionized water and be diluted, then pour in this solution
The nonionic surface active agent O of 10gII-7((C10H21-C6H4-O-CH2CH2O)7-H), it is stirred continuously during the course, then will
The average grain diameter that these mixed solutions pour 500g into be the mass fraction of 20-50nm be 20%Si02In the hydrosol, during not
Disconnected stirring is until pouring into completely.Deionized water is added to make its solution quality reach 1000g after it is thoroughly mixed, now this polishing
The pH value of liquid is 8-9, in operating pressure：30.47kpa；Rubbing head/polishing disk rotating speed：150/150rpm；Flow:300mL/
Min, temperature is polishing 1min under the technique of 25 DEG C, with the rough surface on atomic force microscope barrier layer after polishing
Degree, in result such as Fig. 3, a1 display roughness RMS is 9.8nm.
Embodiment 2
5g chelating agent triethanolamine is put in 100g deionized water, in this solution, then pours the non-ionic of 20g into
Surfactant OII-10((C10H21-C6H4-O-CH2CH2O)10-H), it is stirred continuously during the course, then by molten for these mixing
The 20-50nm mass fraction that liquid pours 500g into is the Si0 of 2%2In the hydrosol, during be stirred continuously until pouring into completely, treat
It adds a small amount of deionized water to make its solution quality reach 1000g after being thoroughly mixed.Now the pH value of this polishing fluid is 9-10.So
After in operating pressure：6.89kpa；Rubbing head/polishing disk rotating speed：57/63rpm；Flow:500mL/min, technique under will throw
Light 2min, by the surface roughness on atomic force microscope barrier layer after polishing, in Fig. 3, a2 display roughness RMS is
3.57nm.
Embodiment 3
5g chelating agent-tetrahydroxyethyl-ethylene diamine is put in 100g deionized water, in this solution, then pours the non-of 20g into
Ionic surfactant 0-20 (C12-18H25-37-C6H4-O-CH2CH2O)70-H), it is stirred continuously during the course, then by this
The 20-50nm mass fraction that a little mixed solutions pour 500g into is the Si0 of 2%2In the hydrosol, during be stirred continuously until completely
Pour into.Adding deionized water to make its solution quality reach 1000g after it is thoroughly mixed, now the pH value of this polishing fluid is 9-
10.Then in operating pressure：6.89kpa；Rubbing head/polishing disk rotating speed：57/63rpm；Flow:Under the technique of 300ml/min
Pattern piece polishes 1min, and by the surface roughness on atomic force microscope barrier layer after polishing, in Fig. 3, a3 shows coarse
Degree RMS is 0.41nm.
Embodiment 4
5g chelating agent-beta-hydroxyethyl ethylenediamine is put in 50g ionized water, then pour in this solution 50g non-from
Subtype surfactant alkylol phthalein amine, is stirred continuously during the course, then these mixed solutions is poured into the 20-50nm of 500g
Mass fraction is the Si0 of 3%2In the hydrosol, during be stirred continuously until pouring into completely.After it is thoroughly mixed add go from
Sub-water makes its solution quality reach 1000g.Now the pH value of this polishing fluid is 9-10.Then in operating pressure：27.56kpa；Throw
Shaven head/polishing disk rotating speed：100/100rpm；Flow:100ml/min, technique under pattern piece is polished 3min, after polishing
By the surface roughness on atomic force microscope barrier layer, in Fig. 3, a4 display roughness RMS is 1.88nm.
Embodiment 5
5g chelating agent-ethylenediamine tetra-acetic acid-four-tetrahydroxyethyl-ethylene diamine is put in 100g deionized water, then at this
Solution is poured into the nonionic surface active agent AEO of 30g, is stirred continuously during the course, then by these
The 20-50nm mass fraction that mixed solution pours 500g into is the Si0 of 2%2In the hydrosol, during be stirred continuously until falling completely
Enter.Deionized water is added to make its solution quality reach 1000g after it is thoroughly mixed.Now the pH value of this polishing fluid is 9-10.
Then in operating pressure：6.89kpa；Rubbing head/polishing disk rotating speed：57/63rpm；Flow:300ml/min, technique under will
Pattern piece polishes 1min, by the surface roughness on atomic force microscope barrier layer after polishing, and a5 display roughness in Fig. 3
RMS is 3.52nm.
Embodiment 6
10g chelating agent AEEA is put in 100g deionized water, then pour in this solution 50g non-from
Subtype surfactant polyoxyethylene alkylamine, is stirred continuously during the course, and then these mixed solutions are poured into the 20-of 500g
50nm mass fraction is the Si0 of 0.1%2In the hydrosol, during be stirred continuously until pouring into completely, add after it is thoroughly mixed
Entering deionized water makes its solution quality reach 1000g.Now the pH value of this polishing fluid is 11-12.Then in operating pressure：
6.89kpa；Rubbing head/polishing disk rotating speed：57/63rpm；Flow:300ml/min, technique under pattern piece is polished 5min,
By the surface roughness on atomic force microscope barrier layer after polishing, in Fig. 3, a6 display roughness RMS is 3.79nm；
Observe surface roughness from Fig. 3, it can be seen that variable concentrations nonionic surface active agent is to cobalt barrier layer table
The impact of surface roughness, the addition of nonionic surface active agent makes the surface roughness on cobalt barrier layer before and after polishing have substantially
Improvement.Meanwhile, it is apparent that work as nonionic surface active agent 0-20 (C in polishing fluid from a312-18H25-37-
C6H4-O-CH2CH2O)7When 0-H) concentration is 20mL/L, surface of polished flatness is good, does not substantially scratch, cobalt barrier layer surface
Roughness reaches minimum.This is primarily due to the quality biography that nonionic surface active agent can accelerate product and reactant
Pass, simultaneously because activating agent can make burnishing surface surface tension be remarkably decreased, reach wetting surface and improve homogeneity, making surface draw
Trace defect reduces, and may certify that application nonionic surface active agent, really improves surface roughness, can reach effectively to control
System improves the effect improving barrier layer surface roughness.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For Yuan, under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (3)
1. the control method of a multi-layer copper metallization cobalt barrier layer surface roughness, it is characterised in that
Comprise the steps：
1) it is formulated for reducing the polishing fluid of GLSI multi-layer copper metallization cobalt barrier layer surface roughness:
A. chelating agent is diluted 10-100 times by deionized water；
B. nonionic surfactant is inclined to step a) in the solution being formed, be constantly stirred during this；
C. by SiO that particle diameter is 20-50nm2It is configured to the abrasive water colloidal sol that mass fraction is 0.1-20%；
D. it is poured into the solution that step b) obtains in the solution that step c) obtains, is constantly stirred during this, treat completely
Deionized water is added to carry out constant volume after mixing；
2) at flow 100-500ml/min, temperature 15-30 DEG C, ramming head rotating speed are 57-150rpm, rotating speed of dumping is 63-
150rpm, polish pressure be 6.89-27.56kpa process conditions under be polished 1-5min；
Wherein, described amount of chelant accounts for the 0.1%-1% of polishing fluid gross mass；The consumption of nonionic surface active agent is
The 1-5% of polishing fluid gross mass；Described SiO2Consumption be the 0.05%-10% of polishing fluid gross mass；Described polishing fluid
Final pH value is 8-12；
Described nonionic surface active agent is OII-7((C10H21-C6H4-O-CH2CH2O)7-H)、OII-10((C10H21-
C6H4-O-CH2CH2O)10-H)、0-20(C12-18H25-37-C6H4-O-CH2CH2O)70-H), JFC, AEO,
Polyoxyethylene alkyl amine, one or several mixing of alkylol phthalein amine.
2. the control method of multi-layer copper metallization cobalt barrier layer surface roughness according to claim 1, it is characterised in that institute
The chelating agent stated is triethanolamine, diethylamine, tetrahydroxyethyl-ethylene diamine, beta-hydroxyethyl ethylenediamine, ethylenediamine tetra-acetic acid-four-four
One or several mixing of AEEA.
3. the control method of multi-layer copper metallization cobalt barrier layer surface roughness according to claim 1, it is characterised in that chela
Mixture deionized water extension rate is 20 times, and chelating agent is tetrahydroxyethyl-ethylene diamine, and amount of chelant accounts for polishing fluid gross mass
0.5%, nonionic surfactant is OII-10((C10H21-C6H4-O-CH2CH2O)10-H), nonionic surface active agent
Consumption is the 2% of polishing fluid gross mass, described SiO2Average grain diameter is 20-50nm, and the mass fraction of abrasive water colloidal sol is 1-
5%, described SiO2Consumption accounts for the 1% of polishing fluid gross mass, and the final ph of described polishing fluid is 9-10；
Described step 2) in polishing technological conditions be：
Operating pressure：6.89kpa；Rubbing head/polishing disk rotating speed：57/63rpm；Flow:300mL/min, polishing time is
1min, temperature 25 DEG C.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| RU2687649C2 (en) * | 2017-10-04 | 2019-05-15 | Общество с ограниченной ответственностью "КРОКУС НАНОЭЛЕКТРОНИКА" | Method of chemical-mechanical polishing of thick layers of cobalt-containing alloys |
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| CN1861321A (en) * | 2006-06-09 | 2006-11-15 | 河北工业大学 | Method for controlling planeness during chemically mechanical polishing for ULSI multiple-layered copper wiring |
| CN1861320A (en) * | 2006-06-09 | 2006-11-15 | 河北工业大学 | Method for controlling disc-like pit during chemically mechanical polishing for ULSI multiple-layered copper wiring |
| CN1864925A (en) * | 2006-06-09 | 2006-11-22 | 河北工业大学 | Method for controlling roughness in ULSI multi-layer copper metallization chemico-mechanical polishing |
| JP2012169510A (en) * | 2011-02-16 | 2012-09-06 | Nitta Haas Inc | Abrasive composition |
| CN104449398A (en) * | 2014-11-25 | 2015-03-25 | 河北工业大学 | Alkaline chemical mechanical polishing solution applicable to cobalt barrier layer |
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|---|---|---|---|---|
| CN1861321A (en) * | 2006-06-09 | 2006-11-15 | 河北工业大学 | Method for controlling planeness during chemically mechanical polishing for ULSI multiple-layered copper wiring |
| CN1861320A (en) * | 2006-06-09 | 2006-11-15 | 河北工业大学 | Method for controlling disc-like pit during chemically mechanical polishing for ULSI multiple-layered copper wiring |
| CN1864925A (en) * | 2006-06-09 | 2006-11-22 | 河北工业大学 | Method for controlling roughness in ULSI multi-layer copper metallization chemico-mechanical polishing |
| JP2012169510A (en) * | 2011-02-16 | 2012-09-06 | Nitta Haas Inc | Abrasive composition |
| CN104449398A (en) * | 2014-11-25 | 2015-03-25 | 河北工业大学 | Alkaline chemical mechanical polishing solution applicable to cobalt barrier layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2687649C2 (en) * | 2017-10-04 | 2019-05-15 | Общество с ограниченной ответственностью "КРОКУС НАНОЭЛЕКТРОНИКА" | Method of chemical-mechanical polishing of thick layers of cobalt-containing alloys |
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