CN106412453B - High dynamic range image sensor based on electric charge transfer twice - Google Patents
High dynamic range image sensor based on electric charge transfer twice Download PDFInfo
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/741—Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Abstract
The invention discloses a kind of high dynamic range image sensor and signal reading method based on electric charge transfer twice, belong to semiconductor image detection technology field, including photoelectric conversion module, ranks read control module, correlated double sampling circuit, column amplifier and analog-digital converter；The data that correlated double sampling circuit reads photoelectric conversion module sample, and filter out a part of system noise, and column amplifier amplifies the collected analogue data of correlated double sampling circuit, give analog-digital converter by ranks reading control and are digitized.By judging that the strong and weak of incident light controls signal TG to generate two-way reset signal RST and two-way electric charge transfer, so that having good linear response under dim light, and electric charge transfer twice is carried out under strong light to obtain good linear response and keep unsaturated state, and then obtain the enhancing of image sensor dynamic range.
Description
Technical field
The invention belongs to semiconductor image detection technology fields, and in particular to a kind of high dynamic based on electric charge transfer twice
Range image sensor and its signal reading method.
Background technique
With the development of modern information technologies, image is obtained and processing technique is also correspondingly improved, image sensing
Basic equipment of the device as image procossing becomes increasingly widespread to be applied to every field.
Electronic image sensor based on semiconductor technology and technique mainly include charge-coupled device (CCD) and
Two kinds of cmos image sensor (CIS).Wherein CIS is easy to carry out Integrated manufacture, tool with circuit due to using standard CMOS process
There are the series of advantages such as low-power consumption, low cost, be more and more widely used in recent years, especially in fields such as profession camera shootings
Start to occupy leading position.
Dynamic range (DR) is an important indicator of CIS, for the range of light intensity that uncalibrated image sensor can be handled,
The range does unit with decibel (dB).On the one hand minimum detectable light intensity that dynamic range needs to reduce CIS is improved, that is, is improved weak
Pixel signal-to-noise ratio under light.On the other hand the detectable light intensity of maximum of pixel need to be improved, mainly (i.e. by pixel integration capacitance size
Trap capacity) it influences.
Traditional CIS pixel circuit is limited using photodetector potential well capacity, and when light intensity increases to a certain extent, maximum is defeated
Signal is saturated out；And when light intensity is weaker, the photogenerated current that photodetector generates is too small and easy by ambient noise institute
Bury in oblivion.So the dynamic range of general CIS is lower, the range of nature light intensity is still not achieved.
In order to improve cmos image sensor dynamic range, following several technologies common at present: (1) improving potential well capacity,
Increase integrating capacitor Cph.(2) multiple repairing weld technology samples Same Scene by multiple exposure, such mode needs
More complicated external reading and storage circuit are wanted, and is not suitable for high-speed photography scene.(3) multi-detector pixel, i.e., at one
Two photodiodes are integrated in pixel unit, one is used for low light condition, and one is used for intense light conditions, but its circuit structure is multiple
It is miscellaneous, and without fundamentally solving potential well capacity problem, the ability for increasing DR is limited.(4) logarithmic response technology.Logarithmic mode
CIS work extremely short metal-oxide-semiconductor connect of one grid leak of DP connection in continuation mode, pixel loads.When metal-oxide-semiconductor works in subthreshold value
There is approximate log current-voltage correlation, so that input signal is directly proportional to the logarithm of light intensity, to extend DR when region.But by
It is influenced very greatly, to cause CIS fixed pattern noise (FPN) very big by technique in subthreshold value metal-oxide-semiconductor performance；(5) linear-logarithmic is compound
The advantages of mode, this technology combines linear model and logarithmic mode, can obtain signal-to-noise ratio under the conditions of low medium light intensity
Higher image, while higher dynamic range is able to maintain under intense light conditions.The disadvantages of the method are as follows needing extremely complex
Circuit carries out the differentiation and conversion of linear and logarithmic mode.
In addition there are other more complicated modes to improve dynamic range, but there are no a kind of ideal sides so far
Method occurs.
Summary of the invention
The object of the present invention is to provide a kind of high dynamic range image sensors based on charge transfer technology twice, and mark
Quasi- business CMOS technology is completely compatible.Purpose is in pixel cell structure, by judging the strong and weak to generate of incident light
Two-way reset signal RST and two-way electric charge transfer control signal TG, so that there is good linear response under dim light, and strong
Electric charge transfer twice is carried out under light to obtain good linear response and keep unsaturated state, and then obtain imaging sensor
The enhancing of dynamic range.
High dynamic range image sensor of the present invention based on electric charge transfer twice, including photoelectric conversion module,
Ranks read control module, correlated double sampling circuit, column amplifier and analog-digital converter；Correlated double sampling circuit is to photoelectric conversion
The data that module is read are sampled, and filter out a part of system noise, and column amplifier is collected by correlated double sampling circuit
Analogue data amplifies, and gives analog-digital converter by ranks reading control and is digitized.
The photoelectric conversion module forms (M, N are positive even numbers), each picture by the pixel unit of a M N array
Plain unit is made of 4T (Transistor) pixel, comparator module, latch module and alternative multiple selector module；?
Under the action of external optical signal, pixel unit generates the picture element signal changed with light intensity, actually plays and turns optical signal
Change the effect of electric signal into；4T pixel output signal is connected to the reverse input end of comparator, and the positive input of comparator
Connection is reference voltage Vref；The output of comparator is connected on latch Latch, when comparator output each time jumps,
Digital code can be latched；The output of latch is connected to alternative multiple selector, to generate reset according to intensity signal
Signal RST and charge transfer signal TG.
Fig. 3 gives the pixel cell structure schematic diagram that (4T) structure is managed using standard 4, leads on P type substrate (P-sub)
The area N+ (n+) of diffusion or injection technology growth N well region (n-well) and heavy doping is crossed, is grown on N well region by ion implanting
The area p+ of heavy doping.Grid oxide layer is prepared by dry oxygen method oxidation between two N well regions n-well, n+, and is formed sediment on grid oxide layer
Product polysilicon layer, forms TG grid.Specific connection type are as follows: the drain terminal of M1, SF pipe is connected with analog power Vdd simultaneously, resets letter
Number RST is connected to the grid of M1 pipe, and the source of M1 pipe is connected with the area the n+ floating node FD of the grid of SF pipe and TG grid side, SF
One end of the source connection M2 pipe of pipe, the other end of M2 pipe are connected with parallel signal bus Signal Bus, and row selects signal RS connects
To the grid of M2 pipe.Wherein, transistor M1 and M2 are used as switching tube, and SF is source follower, and Vdd is supply voltage.
P type substrate is silicon Si, and dopant material is boron, and doping concentration is 1 × 1016/cm3~5 × 1016/cm3
The dopant material in the area heavy doping P is boron, and doping concentration is 1 × 1019/cm3~5 × 1016/cm3。
When row selection signal RS is provided, M2 pipe is opened, by the voltage transmission of SF source to parallel signal bus Signal
On Bus.When circuit carries out resetting operation, M1 pipe and TG grid are opened, and the TG grid side area n+ floating node FD is reset to Vdd-
VTH1, while emptying the photogenerated charge of the TG grid other side area p+, n accumulation.After TG grid and the shutdown of M1 pipe, circuit enters integral shape
State, CPDVoltage in (junction capacity of photodiode) is begun to decline by Vdd, storage charge number it is related with light intensity.When
When needing to read, TG grid are again turned on, and will be stored in CPDOn electric charge transfer to the area n+ of the side TG among.The source electricity of SF pipe
Pressure will equally follow the variation of the area n+ floating node FD level, and picture element signal is transmitted to parallel signal bus Signal Bus
On, read cycle finishes, and M2 pipe disconnects.
The signal reading method of high dynamic range image sensor based on electric charge transfer twice, the specific steps are as follows:
Step 1: circuit carries out reset operation, and M1 pipe and TG grid are opened, the TG grid side area n+ floating node FD resetted
To Vdd-VTH1, while emptying the photogenerated charge of the TG grid other side area p+n accumulation；
Step 2: TG grid and M1 pipe turn off, and circuit enters integrating state, reach t0When, TG grid are opened, and photoelectricity two is stored in
Photogenerated charge in pole pipe PD is transferred in floating node FD；
Step 3: after the completion of electric charge transfer, the source voltage terminal V of source followerSWith the reference electricity of comparator positive input
Press VrefCompare:
If voltage VSGreater than reference voltage Vref, then can determine whether out that incident light is dim light, until integral end all will not be again
There is electric charge transfer, the voltage of floating node FD remains unchanged, t2Moment, the output voltage V of source followerSIt is collected and converts, it
After open next frame, repeat above step；
If voltage VSLess than reference voltage Vref, then can determine whether that incident light is strong light, in moment t1, transmission grid TG opening,
The photogenerated charge being stored in photodiode PD is transferred in floating node FD, while transistor M1 is reset, then TG grid
It is closed with reset transistor M1, circuit enters integration mode of operation；In moment t2, transmit grid TG and be again turned on, at this time source follower SF
Output point voltage be collected and convert, open next frame later, repeat above step；
Wherein: VTH1For the threshold voltage of transistor M1, CPDFor the junction capacity of photodiode, t0Turn for first time charge
At the time of moving generation, t1At the time of generation for second of electric charge transfer, t2At the time of end for entire integral process.
Fig. 4 gives the conversion for the enhancing of 4T pixel cmos image sensor dynamic range that this invention is proposed and calculates
Method.Wherein PrefRepresent the light intensity that pixel just reaches corresponding when saturation, and PmaxRepresent pixel can detect most
Big light intensity, Vref=Iref·t0·CpdFor the reference voltage of comparator positive input.QFDFor the electricity stored in floating node FD
Lotus amount, QfullRepresent the full-well capacity of pixel, Qref=Pref·t0For reference charge amount.t2=t0+
Tint。
Fig. 5 gives conversion timing sequence figure corresponding to dynamic range enhancing algorithm proposed by the invention, when with constant light
When intense irradiation, it is I that photodiode, which will generate size,phPhotoelectric current.When circuit carries out resetting operation, M1 pipe and TG grid are beaten
It opens, while emptying the photogenerated charge of the area p+n accumulation on the left of TG grid, floating node FD is reset to Vdd-V by transistor M1TH1, turning
When changing beginning, TG grid and M1 pipe are turned off, and circuit enters integrating state, CPDOn voltage begin to decline.By an of short duration product
T between timesharing0Later, transmission grid TG is opened, and the photogenerated charge being stored in photodiode PD is quickly transferred to floating node FD
In.
After electric charge transfer is completed, the source voltage terminal V of source followerSPass through comparator and reference voltage VREFCompare.If
Voltage VSGreater than reference voltage Vref, then it can determine whether out that incident light is dim light, terminate all to there will be no electric charge transfer until integrating,
The voltage of floating node FD remains unchanged.In t2Moment, the output voltage V of source followerSIt is collected and converts, Vs2=VFD2-
VGS2, wherein VFD2For the voltage for integrating finish time floating node, and VGS2For the gate source voltage of source follower M2 pipe.Floating section
The resetting voltage V of points1=Vdd-VTH1-VGS2, wherein VTH1For the threshold voltage of transistor M1.
At this point, the light intensity of dim light can be represented as
If voltage VSLess than reference voltage Vref, then can determine whether out that incident light is strong light, in integral moment t1, transmit grid TG
It opens, while transistor M1 is reset.And then TG grid and reset transistor M1 are closed, and circuit enters integration mode of operation.It is integrating
Moment t2, transmit grid TG and be again turned on, acquire the output point voltage V ' of source follower M2 at this timeS2=VFD1-VGS2, wherein VFD1For
Integrate the voltage of finish time floating node.
At this point, the light intensity of strong light can be represented as
Before dynamic range Enhancement Method, the largest light intensity that pixel can detect is
And when using dynamic range enhancing algorithm, the largest light intensity that pixel can detect is
Therefore, the dynamic range of imaging sensor has been enhanced k-bit,
As k=8, dynamic range enhancing can theoretically reach 48.16dB.
The signal-to-noise ratio (SNR) of imaging sensor can be expressed as
Wherein, iphFor photoelectric current, idFor dark current,For input noise power.
Compared with prior art, high dynamic range image sensor of the present invention has the advantage that
1, linear response is all maintained in entire range of light intensity, output DN (Digital Number) value is proportional to incidence
Luminous intensity enormously simplifies the treatment process of subsequent digital signal.
2, photodetector is made of 4T pixel, and Correlated Double Sampling, which can be used, largely reduces system noise
Sound, fill factor with higher and simple structure, no matter under strong light or dim light response speed is all very fast.
3, the judgement that can directly realize incident light power using simple circuit inside pixel, without subsequent complicated electricity
The image procossing on road.
4, using new pixel circuit readout algorithm, K value is adjusted by changing, very high dynamic range may be implemented and increase
By force.
Detailed description of the invention
The system architecture schematic diagram of Fig. 1 traditional imaging sensor；
The dot structure schematic diagram of Fig. 2 imaging sensor of the invention based on electric charge transfer twice；
The pixel unit connection schematic diagram of 4T structure Fig. 3 of the invention；
The transfer algorithm schematic diagram of CIS dynamic range enhancing Fig. 4 of the invention；
The time diagram of CIS dynamic range enhancing Fig. 5 of the invention；
The relationship of CIS signal-to-noise ratio and incident intensity Fig. 6 of the invention；
From fig. 6 it can be seen that being read present invention employs 0.18um 1P4M standard CIS technique compared to traditional 4T pixel
Mode out only increases a light intensity judgement and the operation of electric charge transfer, when not needing to be compared, comparator offset
Voltage pull-down is to save power consumption, and by this signal reading method, the dynamic range of cmos image sensor realizes 8bit
Enhancing, by 61.15dB enhancing to 107.36dB only consume 5% power consumption.
Specific embodiment
Technical solution of the present invention is described further with reference to the accompanying drawing.
Imaging sensor and standard CMOS process of the present invention are completely compatible, below based on 0.18 μm of 1P4M standard
CIS technique reads control based on the high dynamic range image sensor of electric charge transfer twice, including photoelectric conversion module, ranks
Module, correlated double sampling circuit, column amplifier and analog-digital converter；The number that correlated double sampling circuit reads photoelectric conversion module
According to being sampled, and a part of system noise is filtered out, column amplifier carries out the collected analogue data of correlated double sampling circuit
Amplification is given analog-digital converter by ranks reading control and is digitized.
The photoelectric conversion module is made of the pixel unit of a M N array, wherein M, N are positive even numbers, often
A pixel unit is made of 4T pixel, comparator module, latch module and alternative multiple selector module；Believe in exterior light
Under the action of number, pixel unit generates the picture element signal changed with light intensity, actually plays and converts optical signals into telecommunications
Number effect；4T pixel output signal is connected to the reverse input end of comparator, and the connection of the positive input of comparator is
Reference voltage Vref；The output of comparator is connected on latch, when comparator output each time jumps, can latch number
Code；The output of latch is connected to alternative multiple selector, to generate reset signal RST and charge turn according to intensity signal
Shifting signal TG.
The 4T pixel is as shown in figure 3, all metal-oxide-semiconductors are designed using N pipe in 4T structure, and pixel integration capacitor is by photoelectricity
Diode junction capacitance (p+ and n-well) is constituted, and the capacitor of floating node FD is by n+ and p-sub junction capacity and source follower SF
Gate capacitance is constituted.Specifically the area N+ of N well region and heavy doping, N are grown by diffusion or injection technology in P type substrate
The area p+ of heavy doping is grown on well region by ion implanting；Preparation grid oxygen is aoxidized by dry oxygen method between two N well regions, the area N+
Layer, and the depositing polysilicon layer on grid oxide layer form TG grid；Specific connection type are as follows: the drain terminal of M1, SF pipe simultaneously with Vdd phase
Even, reset signal RST is connected to the area the n+ floating node of the grid of M1 pipe, the source of M1 pipe and the grid of SF pipe and TG grid side
FD is connected, and one end of the source connection M2 pipe of SF pipe, the other end of M2 pipe is connected with parallel signal bus, and row selects signal RS is connected to
The grid of M2 pipe；Wherein, transistor M1 and M2 are used as switching tube, and SF is source follower, and Vdd is supply voltage.
Incident light is inputted using the monochromatic light of 600nm wavelength.Device P-sub doping concentration 1 × 1016/cm3, N-well mixes
Miscellaneous concentration 1 × 1017/cm3, P+ heavy dopant concentration is 1 × 1019/cm3, N+ heavy dopant concentration is 1 × 1019/cm3, TG, switch are
Polysilicon gate, p-type dopant material are boron, and n-type doping material is phosphorus P.
Embodiment 1:
The signal reading method of high dynamic range image sensor based on electric charge transfer twice, the specific steps are as follows:
Step 1: when work starts, first during reset, transmission gate control signal TG and reset signal RST is set to
High level 3.3V, floating node FD are reset to 2.3V, while integrating capacitor CPDIn integral charge be transferred into completely it is floating
Node FD reads the source voltage terminal V of source follower SF at this times1。
Step 2: it is low level that transmission gate control signal TG and reset signal RST, which is drawn, turns off switch TG and reset transistor
M1, photodiode enter integration mode of operation.By 200ns (judgement for light intensity) and then secondary opening TG, integral
Electric charge transfer is to floating node FD.
Step 3: by comparator to pixel output point voltage VSWith the reference voltage V of 1.3VrefIt is compared.If comparing
Device output is low level, then can determine whether that incident light is dim light at this time, it is corresponding to generate dim light by alternative multiple selector MUX
Timing, i.e. generation reset signal RST1 and charge transfer signal TG1.When t0 moment, that is, 200ns, circuit enters long integral
In the stage, when finish time time of integration t2, that is, 1.2ms, TG are just again turned on, and store integral in the photodiode
Electric charge transfer is into floating node FD, and the grid end of source follower SF is connected on node FD, and source voltage terminal follows grid voltage to change,
Source follower SF source voltage terminal V is read at this times2, it is amplified after being sampled by correlated double sampling circuit by column amplifier, then by
Analog-digital converter is digitized.
Embodiment 2:
The signal reading method of high dynamic range image sensor based on electric charge transfer twice, the specific steps are as follows:
Step 1: when work starts, first during reset, transmission gate control signal TG and reset signal RST is set to
High level 3.3V, floating node FD are reset to 2.3V, while integrating capacitor CPDIn integral charge be transferred into completely it is floating
Node FD reads the source voltage terminal V of source follower SF at this times1。
Step 2: it is low level that transmission gate control signal TG and reset signal RST, which is drawn, turns off switch TG and reset transistor
M1, photodiode enter integration mode of operation.By 200ns and then secondary opening TG, integral charge is transferred to floating section
Point FD.
Step 3: by comparator to pixel output point voltage VSWith the reference voltage V of 1.3VrefIt is compared, charge turns
Shifting is again turned on reset transistor M1 after completing and resets to photodiode, is then turned off.If comparator output is high level,
It then can determine whether that incident light is strong light at this time, the corresponding timing of strong light generated by alternative multiple selector MUX, that is, generates reset
Signal RST2 and charge transfer signal TG2.When t0 moment, that is, 200ns, circuit enters integration mode of operation, reaches integral
When moment time t1, that is, 1196ns, it is again turned on transmission gate control signal TG and reset transistor M1, completes the transfer and reset of charge
Operation.Subsequent TG and RST is pulled low to low level, closes TG and reset transistor M1.Short integration phase is entered later, is being integrated
When finish time time t2, that is, 1.2ms, TG are again turned on, and the integral charge stored in the photodiode is transferred to floating section
In point FD, source follower SF source voltage terminal V is read at this timeS′2, put after being sampled by correlated double sampling circuit by column amplifier
Greatly, then by analog-digital converter it is digitized.
When not needing to be compared, comparator offset voltages drag down to save power consumption, pass through this signal reading side
The dynamic range of method, cmos image sensor realizes the enhancing of 8bit, by 61.15dB enhancing to 107.36dB only more consumption
5% power consumption.
Claims (3)
1. the high dynamic range image sensor based on electric charge transfer twice, which is characterized in that including photoelectric conversion module, ranks
Read control module, correlated double sampling circuit, column amplifier and analog-digital converter；Correlated double sampling circuit is to photoelectric conversion module
The data of reading are sampled, and filter out a part of system noise, and column amplifier is by the collected simulation of correlated double sampling circuit
Data amplify, and give analog-digital converter by ranks reading control module and are digitized；
The photoelectric conversion module is made of the pixel unit of a M N array, wherein M, N are positive even numbers, each picture
Plain unit is made of 4T pixel, comparator module, latch module and alternative multiple selector module；In external optical signal
Under effect, pixel unit generates the picture element signal changed with light intensity, actually plays and converts optical signals into electric signal
Effect；4T pixel output signal is connected to the reverse input end of comparator module, and the positive input of comparator module connects
Be reference voltage Vref；The output of comparator module is connected on latch module, and comparator module output each time jumps
When, digital code can be latched；The output of latch module is connected to alternative multiple selector module, to be believed according to light intensity
Breath generates reset signal RST and charge transfer signal TG；
The 4T pixel is to grow the area N+ of N well region and heavy doping, N trap by diffusion or injection technology in P type substrate
The area p+ of heavy doping is grown in area by ion implanting；Preparation grid oxygen is aoxidized by dry oxygen method between two N well regions, the area N+
Layer, and the depositing polysilicon layer on grid oxide layer form TG grid；Specific connection type are as follows: the drain terminal of M1, SF pipe simultaneously with Vdd phase
Even, reset signal RST is connected to the area the n+ floating node of the grid of M1 pipe, the source of M1 pipe and the grid of SF pipe and TG grid side
FD is connected, and one end of the source connection M2 pipe of SF pipe, the other end of M2 pipe is connected with parallel signal bus, and row selects signal RS is connected to
The grid of M2 pipe；Wherein, transistor M1 and M2 are used as switching tube, and SF is source follower, and Vdd is supply voltage；
The signal reading method of the imaging sensor, the specific steps are as follows:
Step 1: circuit carries out reset operation, and M1 pipe and TG grid are opened, the TG grid side area n+ floating node FD are reset to
Vdd-VTH1, while emptying the photogenerated charge of the TG grid other side area p+n accumulation；
Step 2: TG grid and M1 pipe turn off, and circuit enters integrating state, reach t0When, TG grid are opened, and photodiode is stored in
Photogenerated charge in PD is transferred in floating node FD；
Step 3: after the completion of electric charge transfer, the source voltage terminal V of source followerSWith the reference voltage V of comparator positive inputref
Compare:
If voltage VSGreater than reference voltage Vref, then judge that incident light is dim light, until integral terminates all to there will be no charge
Transfer, the voltage of floating node FD remain unchanged, t2Moment, the output voltage V of source followerSIt is collected and converts, open later
Next frame repeats above step；
If voltage VSLess than reference voltage Vref, then incident light is judged for strong light, in moment t1, transmit grid TG and open, be stored in
Photogenerated charge in photodiode PD is transferred in floating node FD, while transistor M1 is reset, then TG grid and reset
Pipe M1 is closed, and circuit enters integration mode of operation；In moment t2, it transmits grid TG and is again turned on, the output of source follower SF at this time
Point voltage is collected and converts, and opens next frame later, repeats above step；
Wherein: VTH1For the threshold voltage of transistor M1, CPDFor the junction capacity of photodiode, t0For first time electric charge transfer hair
At the time of raw, t1At the time of generation for second of electric charge transfer, t2At the time of end for entire integral process.
2. the high dynamic range image sensor as described in claim 1 based on electric charge transfer twice, which is characterized in that described
P type substrate be silicon, dopant material is boron, and doping concentration is 1 × 1016/cm3~5 × 1016/cm3。
3. the high dynamic range image sensor as described in claim 1 based on electric charge transfer twice, which is characterized in that described
The area heavy doping P+ dopant material be boron, doping concentration be 1 × 1019/cm3~5 × 1016/cm3。
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