CN106410019A - Submount array - Google Patents
Submount array Download PDFInfo
- Publication number
- CN106410019A CN106410019A CN201510446369.XA CN201510446369A CN106410019A CN 106410019 A CN106410019 A CN 106410019A CN 201510446369 A CN201510446369 A CN 201510446369A CN 106410019 A CN106410019 A CN 106410019A
- Authority
- CN
- China
- Prior art keywords
- substrate
- adhesion
- time
- outer frame
- base plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 97
- 239000013078 crystal Substances 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000002844 melting Methods 0.000 description 15
- 230000008018 melting Effects 0.000 description 15
- 238000005538 encapsulation Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical group [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Die Bonding (AREA)
Abstract
The embodiment of the present invention discloses a submount array. The submount array comprises a first outer frame part, a second outer frame part and a plurality of submount strings connected between the first outer frame part and the second outer frame part, wherein the first submount string comprises M submounts, and the first edge of the first submount is connected with the first outer frame part via a first connecting part; the first edge of the N-th submount is connected with the second edge of the (N-1)-th submount via an N-th connecting part, the first edge of the M-th submount is connected with the second edge of the (M-1)-th submount via an M-th connecting part, and the second edge of the M-th submount is connected with the second outer frame part via an (M+1)-th connecting part; N is a positive integer greater than 1 and less than M. According to the technical scheme of the embodiment of the present invention, the material utilization rate can be improved.
Description
Technical field
The invention relates to a kind of adhesion substrate, and in particular to a kind of adhesion substrate battle array
Array structure.
Background technology
It is known that the encapsulation side of light emitting diode (LED) or laser diode (Laser diode)
Formula is that LED crystal particle (die) or laser diode crystal grain are pasted on time adhesion substrate
(submount).And the secondary adhesion topmost function of substrate is by produced for crystal grain itself heat quickly
Crystal grain is opened in ground diversion, is effectively prevented crystal grain deterioration.Therefore, secondary adhesion substrate alternatively referred to as radiates base
Plate.
Refer to Figure 1A to Fig. 1 C, it is shown to be known light emitting diode or laser diode
Encapsulation schematic diagram.As shown in Figure 1A, divide in the upper picture of secondary adhesion substrate film (submount board) many
The secondary adhesion substrate 11～68 in individual region, and more define in the secondary adhesion substrate 11～68 in each region
Conformable region (attached zone), and crucible zone (eutectic altogether is formed on conformable region
Layer) 11a～68a.Substantially, the area of conformable region may be less than or equal to once adhesion substrate 11～68
Area.Wherein, the material of secondary adhesion substrate film is silicon (silicon) or aluminium nitride (AlN), congruent melting
The material of layer 11a～68a is gold-tin alloy (AuSn) or indium (In).
Then, as shown in Figure 1B, by manufacture complete crystal grain 11b～68b (LED crystal particle or
Person is laser diode crystal grain) it is positioned on the congruent melting layer 11a～68a of conformable region.Afterwards, it is heated to
The fusing point of congruent melting layer 11a～68a simultaneously cools down, you can make crystal grain 11b～68b tight with time adhesion substrate film
Laminating.And after cooling down, along drawing the region 11～68 divided, secondary adhesion substrate film is cut, that is,
Form the encapsulation of other light emitting diode or laser diode.
As shown in Figure 1 C, it is the encapsulation schematic diagram of single light emitting diode or laser diode.
In this encapsulating structure, congruent melting layer 11a is by crystal grain 11b (LED crystal particle or laser two pole
Pipe crystal grain) it is fixed on time adhesion substrate 11.
Content of the invention
Purpose of the present invention system proposes a kind of secondary adhesion base plate array of metal material, and its structure differs from public affairs
Know the secondary adhesion substrate film with silicon or aluminium nitride as material.
The present invention is related to a kind of adhesion base plate array, including：One first outer frame；Outside one second
Frame portion；And multiple adhesion substrate strings, it is connected between this first outer frame and this second outer frame.
According to above-mentioned secondary adhesion base plate array, first time adhesion substrate string includes M time and glues
Substrate；One for the first time adhesion substrate one first side via a first connecting portion connect to this outside first
Frame portion；One first side of one n-th adhesion substrate connects to one (N-1) via a N connecting portion
One second side of secondary adhesion substrate；One first side of one the M time adhesion substrate connects via a M
Portion connects to one second side of one (M-1) secondary adhesion substrate；And, this M time adhesion substrate
One second side connects to this second outer frame via one (M+1) connecting portion；Wherein, N is more than 1,
And the positive integer less than M.
According to above-mentioned secondary adhesion base plate array, this first outer frame, this second outer frame, Yi Jisuo
The material stating time adhesion substrate string is a metal, such as copper.
According to above-mentioned secondary adhesion base plate array, the first thickness of this first connecting portion is less than this for the first time
The second thickness of adhesion substrate.First width of this first connecting portion is less than or equal to this adhesion base for the first time
Second width on this first side in plate.
According to above-mentioned secondary adhesion base plate array, the first surface that this adheres substrate for the first time forms one
Congruent melting layer, in order to fit in this first time adhesion substrate by a crystal grain.
Brief description
Figure 1A to Fig. 1 C, its shown encapsulation for known light emitting diode or laser diode
Schematic diagram.
The shown first embodiment for the present invention time adhesion base plate array of Fig. 2.
The shown second embodiment for the present invention time adhesion base plate array of Fig. 3.
Wherein, description of reference numerals is as follows：
11～68：Secondary adhesion substrate
11a～68a：Congruent melting layer
11b～68b：Crystal grain
200：Secondary adhesion base plate array
210、220、230、240：Outer frame
221～225,251～255,261～265：Secondary adhesion substrate
221a～225a, 251a～255a, 261a～265a：Junction point
250、260：Edge strip portion
300：Secondary adhesion base plate array
310、320、330、340：Outer frame
311～315,321～325,331～335：Secondary adhesion substrate
341～345,351～355：Secondary adhesion substrate
311a～316a：Connecting portion
Specific embodiment
In order to more preferably understand to having of the present invention, preferred embodiment cited below particularly, and coordinate appended attached
Figure, elaborates.
Because metal has preferably thermal conduction characteristic, the therefore present invention is to be used as using metal material
Secondary adhesion substrate film, and it is processed into time adhesion base plate array.According to embodiments of the invention, secondary viscous
The material substrate is copper (Cu), but is not limited to this.
Refer to Fig. 2, its shown first embodiment for the present invention time adhesion base plate array.First,
The secondary adhesion substrate film of metal material is carried out forming time adhesion base plate array after Lithography Etching technique
200.Secondary adhesion base plate array 200 includes：Outer frame 210,220,230,240, edge strip portion 250,
260, secondary adhesion substrate 221～225,251～255,261～265, and junction point 221a～225a,
251a～255a, 261a～265a.
Substantially, secondary adhesion outermost part after Lithography Etching technique for the substrate film is time adhesion
The outer frame 210,220,230,240 of base plate array 200.Furthermore, outer frame 210,230 it
Between connect two edge strip portions 250,260.In addition, outer frame 220 is also connected to outer frame 210,230
Between it is also possible to be considered as edge strip portion.
Furthermore, in each edge strip portion 220,250,260, via junction point 221a～225a,
251a～255a, 261a～265a connect to corresponding adhesion substrate 221～225,251～255,
261～265.
According to the first embodiment of the present invention, secondary adhesion substrate 221～225,251～255,261～265
For square, and the width of junction point 221a～225a, 251a～255a, 261a～265a is less than or equal to
One side of secondary adhesion substrate 221～225,251～255,261～265.Certainly, the present invention does not limit
The profile of fixed adhesion substrate 221～225,251～255,261～265, secondary adhesion substrate can be more
Side shape.
After the completion of secondary adhesion base plate array 200, you can in the first surface of secondary adhesion base plate array 200
Plate crucible zone (not shown) altogether, in other words, in secondary adhesion base plate array 200 outer frame 210,
220th, 230,240, edge strip portion 250,260, secondary adhesion substrate 221～225,251～255,261～265,
And congruent melting layer all can be formed on junction point 221a～225a, 251a～255a, 261a～265a.Wherein,
The material of congruent melting layer is gold-tin alloy (AuSn) or indium (In).
Afterwards, the LED crystal particle that completes will be manufactured or laser diode crystal grain is positioned over time
On the congruent melting layer of adhesion substrate 221～225,251～255,261～265, you can be heated to congruent melting layer
Fusing point simultaneously cools down so that crystal grain is fitted tightly with time adhesion substrate film.And after cooling down, cut and connect
Point 221a～225a, 251a～255a, 261a～265a, that is, formed an other light emitting diode or
The encapsulation of laser diode.
Substantially, after the secondary adhesion base plate array 200 of first embodiment being cut, edge strip portion
250th, 260 all must discard.Therefore so that the material of the secondary adhesion base plate array 200 of first embodiment
Material utilization rate is relatively low.
Refer to Fig. 3, its shown second embodiment for the present invention time adhesion base plate array.First,
The secondary adhesion substrate film of metal material is carried out forming time adhesion base plate array after Lithography Etching technique
300.Secondary adhesion base plate array 300 includes：Outer frame 310,320,330,340, secondary adhesion base
Plate 311～315,321～325,331～335,341～345,351～355, and junction point.
Substantially, secondary adhesion outermost part after Lithography Etching technique for the substrate film is time adhesion
The outer frame 310,320,330,340 of base plate array 300.Furthermore, outer frame 320,340 it
Between connect multiple adhesion substrate strings.The secondary adhesion substrate string being formed with secondary adhesion substrate 311～315
As a example illustrating.
First side of adhesion substrate 311 connects to outer frame via first connecting portion 311a for the first time
320；First side of second adhesion substrate 312 connects to for the first time via second connecting portion 312a
Second side of adhesion substrate 311；First side of third time adhesion substrate 313 is via one the 3rd connecting portion
313a connects to the second side of second substrate 312 of adhering；The first of 4th adhesion substrate 314
When connecting to third time the second of substrate 313 of adhering via one the 4th connecting portion 314a；5th time
First side of adhesion substrate 315 connects to the 4th adhesion substrate 314 via one the 5th connecting portion 315a
The second side；Second side of the 5th adhesion substrate 315 via one the 6th connecting portion 316a connect to
Outer frame 340.
According to the second embodiment of the present invention, secondary adhesion substrate 311～315,321～325,331～335,
341～345,351～355 is square, and the width of junction point is less than or equal to time adhesion substrate
311～315,321～325,331～335,341～345,351～355 side.
Certainly, the present invention do not limit time adhesion substrate 311～315,321～325,331～335,
341～345,351～355 profile, secondary adhesion substrate can be more polygon.In addition, the present invention
Do not limit the number of time adhesion substrate in the middle of one adhesion substrate string.Furthermore, second embodiment time
Adhesion base plate array 300 is to illustrate taking four outer frames 310,320,330,340 as a example,
Certainly the present invention only can also connect time adhesion substrate string with two outer frames 320,340.
In the same manner, after the completion of secondary adhesion base plate array 300, you can in secondary adhesion base plate array 300
First surface plates crucible zone (not shown) altogether, in other words, in the housing of secondary adhesion base plate array 300
Portion 310,320,330,340, secondary adhesion substrate 311～315,321～325,331～335,341～345,
Congruent melting layer all can be formed on 351～355, and junction point.Wherein, the material of congruent melting layer is Jin Xihe
Golden (AuSn) or indium (In).
Afterwards, the LED crystal particle that completes will be manufactured or laser diode crystal grain is positioned over time
On the congruent melting layer of adhesion substrate 311～315,321～325,331～335,341～345,351～355,
Can be heated to the fusing point of congruent melting layer and cool down so that crystal grain is fitted tightly with time adhesion substrate film.And
After cooling, cut junction point, that is, form the envelope of other light emitting diode or laser diode
Dress.
It is apparent that the stock utilization of the secondary adhesion base plate array 300 of second embodiment will ratio first
The stock utilization of the secondary adhesion base plate array 200 of embodiment is also high.
Furthermore, after secondary adhesion base plate array 300 is formed, more can in addition execute a Lithography Etching work
Skill, in order to reduce the thickness of junction point, and makes the thickness of all junction points be less than time adhesion substrate
311～315,321～325,331～335,341～345,351～355 thickness.So, it is possible more
Effectively it is attached cutting a little.
According to above explanation, the secondary adhesion base plate array of second embodiment at least includes：First housing
Portion；Second outer frame；And multiple adhesion substrate strings, it is connected to the first outer frame and the second housing
Between portion.For example, adhesion substrate string includes M time adhesion substrate for the first time；For the first time
First side of adhesion substrate connects to the first outer frame via first connecting portion；N-th adhesion substrate
First while via N connecting portion connect to (N-1) secondary adhesion substrate second while；Glue for the M time
The first of substrate while via M connecting portion connect to (M-1) secondary adhesion substrate second while；With
And, the second side of the M time adhesion substrate connects to the second outer frame via (M+1) connecting portion；Its
In, N is more than 1, and the positive integer less than M.
Furthermore, the material of the first outer frame, the second outer frame and secondary adhesion substrate string is a metal,
Such as copper.And, the first thickness of first connecting portion is less than the second thickness of substrate of adhering for the first time.
First width of first connecting portion is less than or equal to second width on the first side in first time adhesion substrate.Separately
Outward, the first surface of adhesion substrate forms congruent melting layer for the first time, viscous for the first time in order to fit in crystal grain
Substrate.
In sum although the present invention is open as above with preferred embodiment, so it is not limited to
The present invention.Persond having ordinary knowledge in the technical field of the present invention, in the spirit without departing from the present invention
In scope, when can be used for a variety of modifications and variations.Therefore, protection scope of the present invention is when regarding this Shen
Please the defined person of right be defined.
Claims (6)
1. a kind of adhesion base plate array, including：
One first outer frame；One second outer frame；And multiple adhesion substrate strings, be connected to this
Between one outer frame and this second outer frame；
Wherein, first time adhesion substrate string includes M time adhesion substrate；One adheres for the first time
One first side of substrate connects to this first outer frame via a first connecting portion；One n-th adhesion
One first side of substrate connects to the one second of one (N-1) secondary adhesion substrate via a N connecting portion
Side；One first side of one the M time adhesion substrate connects to one (M-1) via a M connecting portion
One second side of secondary adhesion substrate；And, one second side of this M time adhesion substrate is via one
(M+1) connecting portion connects to this second outer frame；
Wherein, N is more than 1, and the positive integer less than M.
2. as claimed in claim 1 secondary adhesion base plate array it is characterised in that this first housing
The material in portion, this second outer frame and described adhesion substrate string is a metal.
3. as claimed in claim 2 secondary adhesion base plate array it is characterised in that this metal be copper.
4. as claimed in claim 1 secondary adhesion base plate array it is characterised in that this first connection
The first thickness in portion is less than the second thickness of this substrate of adhering for the first time.
5. as claimed in claim 1 secondary adhesion base plate array it is characterised in that this first connection
First width in portion is less than or equal to second width on this first side in this substrate of adhering for the first time.
6. as claimed in claim 1 secondary adhesion base plate array it is characterised in that this is for the first time viscous
The first surface substrate forms crucible zone altogether, in order to a crystal grain is fitted in this first time adhesion base
Plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510446369.XA CN106410019A (en) | 2015-07-27 | 2015-07-27 | Submount array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510446369.XA CN106410019A (en) | 2015-07-27 | 2015-07-27 | Submount array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106410019A true CN106410019A (en) | 2017-02-15 |
Family
ID=58008426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510446369.XA Pending CN106410019A (en) | 2015-07-27 | 2015-07-27 | Submount array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106410019A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101930934A (en) * | 2009-06-22 | 2010-12-29 | 斯坦雷电气株式会社 | The manufacture method of light-emitting device, light-emitting device and light-emitting device board for mounting electronic |
| JP2012069885A (en) * | 2010-09-27 | 2012-04-05 | Sanken Electric Co Ltd | Method of manufacturing light-emitting diode, and light-emitting diode |
| CN104465968A (en) * | 2013-09-23 | 2015-03-25 | 弘凯光电(深圳)有限公司 | Light-emitting diode packaging structure and manufacturing method thereof |
-
2015
- 2015-07-27 CN CN201510446369.XA patent/CN106410019A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101930934A (en) * | 2009-06-22 | 2010-12-29 | 斯坦雷电气株式会社 | The manufacture method of light-emitting device, light-emitting device and light-emitting device board for mounting electronic |
| JP2012069885A (en) * | 2010-09-27 | 2012-04-05 | Sanken Electric Co Ltd | Method of manufacturing light-emitting diode, and light-emitting diode |
| CN104465968A (en) * | 2013-09-23 | 2015-03-25 | 弘凯光电(深圳)有限公司 | Light-emitting diode packaging structure and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI303872B (en) | High power light emitting device assembly with esd preotection ability and the method of manufacturing the same | |
| KR102204786B1 (en) | Organic light emitting diode | |
| US9961759B2 (en) | Flexible substrate | |
| CN104037314B (en) | Stage light flip-chip chip-on-board (COB) light source and production process thereof | |
| US10186637B2 (en) | Flip-chip light emitting device and fabrication method | |
| US20140091330A1 (en) | Led package structure with transparent electrodes | |
| TWM273822U (en) | Surface mounted LED leadless flip chip package having ESD protection | |
| EP2439798A1 (en) | Vertical structure semiconductor light emitting device and method for manufacturing the same | |
| KR100781917B1 (en) | Method for manufacturing heat sink of semiconductor device | |
| US8890217B2 (en) | Electronic device | |
| CN106410019A (en) | Submount array | |
| TWI528596B (en) | Led package and method of manufacturing the same | |
| US8232119B2 (en) | Method for manufacturing heat dissipation bulk of semiconductor device | |
| JP5444289B2 (en) | Metal base and manufacturing method thereof | |
| JP2008193092A (en) | Light emitting diode chip support and utilization method thereof | |
| TWI569481B (en) | Submount array | |
| CN105098048B (en) | LED chip and preparation method thereof | |
| US11488922B2 (en) | Back side metallization | |
| CN209963079U (en) | High-brightness LED light source | |
| US20100025720A1 (en) | Packaging structure and method for light-emitting diode | |
| CN101350393B (en) | Encapsulation structure for LED and method thereof | |
| KR20200137867A (en) | Semiconductor device package with improved heat characteristic and method for forming the same | |
| US10367126B2 (en) | Light-emitting device | |
| CN206194782U (en) | LED chip convenient to processing | |
| KR20140090418A (en) | Substrate for optical device and light emitting diode package having the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170215 |