CN101350393B - Encapsulation structure for LED and method thereof - Google Patents
Encapsulation structure for LED and method thereof Download PDFInfo
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- CN101350393B CN101350393B CN2008102121753A CN200810212175A CN101350393B CN 101350393 B CN101350393 B CN 101350393B CN 2008102121753 A CN2008102121753 A CN 2008102121753A CN 200810212175 A CN200810212175 A CN 200810212175A CN 101350393 B CN101350393 B CN 101350393B
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- crystal grain
- led
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Abstract
The invention provides a packing structure of a luminescent diode, which comprises a crystal particle capable of emitting electroluminescence, solder paste layers which are tightly arranged on the bottom and the periphery of the crystal particle and enables the crystal particle to be combined with at least one support, and a heat conducting layer which is tightly arranged on the bottom of the solder paste and can provide the heat conducting approach of the crystal particle. With the structure, the packing heat resistance of the luminescent diode can be greatly reduced, and furthermore, the invention further provides a method for packing the luminescent diode, which can greatly reduce the packing heat resistance of the luminescent diode.
Description
[technical field that the present invention belongs to]
The present invention relates to a kind of encapsulating structure and method thereof of light-emitting diode, refer in particular to a kind of encapsulating structure and method thereof of light-emitting diode of the packaging thermal resistance that can significantly reduce light-emitting diode.
[prior art]
Present LED for illumination (Light Emitting Diode, be called for short LED) nearly all be with great power LED (its power is greater than more than the 0.5W), and high-power LED encapsulation all is devoted to toward the direction of low thermal resistance (high heat radiation) encapsulation to develop, because of luminous efficiency and the temperature of LED closely bound up, temperature is high more, the LED luminous efficiency is just low more, therefore high-power LED encapsulation is all towards rapid heat dissipation, and promptly the direction of low thermal resistance develops.
Please refer to Fig. 1, it has illustrated the schematic diagram of the encapsulating structure of great power LED now.As shown in the figure, its thermal resistance can be divided into four parts, and first is LED luminescent layer (InGaN) 100 partly; Second is LED substrate 120 partly, it typically is sapphire (Al
2O
3), more than two parts be combined into LED crystal grain or chip; The 3rd partly is the elargol layer 130 with LED crystal grain and led support combination; The 4th is the heat-conducting layer 140 of led support partly, and it generally uses copper alloy C194, and this layer is called heat sink again, and these four parts are the overall package thermal resistance of LED encapsulation altogether.
The computing formula of the thermal resistance of each assembly is as follows among Fig. 1: R=1/ (S* λ), wherein 1 is distance, S is a sectional area, λ is the coefficient of heat conduction (W/m ℃) of material, more than four parts thermal resistance calculation gained result as shown in Table 1:
Table one
By table one as can be seen in the thermal resistance of LED encapsulating structure the shared ratio of elargol layer 130 very high, if therefore can get a replacement elargol and the high material of the coefficient of heat conduction, can significantly improve the thermal resistance of LED encapsulating structure.
There is a kind of method just to be to use the eutectic method now; so-called eutectic method is to plate one deck eutectic material AuSn on the led support or on the LED crystal grain earlier; after making LED crystal grain contact led support then; with LED crystal grain with the supersonic frequency led support that rubs back and forth; utilize the principle of frictional heat AuSn to be heated to the temperature of thawing; moment stops to make the AuSn cooling then; so can be on led support with LED die attach (combination in other words); the coefficient of heat conduction of the employed AuSn of this method is 58W/m ℃; thickness only is 0.01mm; therefore, the thermal resistance of this layer only is 0.17 ℃/W, though can effectively reduce the thermal resistance of overall package; this method must install the equipment of eutectic additional; increase production cost, and must first plate one deck eutectic material earlier, and use supersonic frequency and the large tracts of land LED crystal grain that rubs LED crystal grain or led support; which kind of potential risk factor LED crystal grain is caused; the people does not inquire into, so user and few, really belongs to a fly in the ointment.
Therefore, be necessary to design a kind of encapsulating structure and method thereof of light-emitting diode, to overcome above-mentioned defective.
[summary of the invention]
The object of the present invention is to provide a kind of encapsulating structure of light-emitting diode, it can significantly reduce the packaging thermal resistance of light-emitting diode.
Another object of the present invention is to provide a kind of encapsulating structure of light-emitting diode, it replaces the elargol layer with tin paste layer, except that can reducing the heating required time, also can reduce production costs.
In order to achieve the above object, the encapsulating structure of light-emitting diode of the present invention comprises: a crystal grain, and it can be for sending electroluminescence; One tin paste layer, its be place this crystal grain bottom and around, can be for this crystal grain is combined with at least one support; And a heat-conducting layer, it is the bottom that places this tin paste layer, and the heat conduction approach of this crystal grain can be provided.
In order to achieve the above object, light emitter diode seal method of the present invention comprises the following steps: to provide a crystal grain, and it can be for sending electroluminescence; With a tin paste layer place this crystal grain bottom and around, combine with at least one support for this crystal grain; And a heat-conducting layer placed the bottom of this tin paste layer, so that the heat conduction approach of this crystal grain to be provided.
For making your auditor can further understand structure of the present invention, feature and purpose thereof, the attached now detailed description with graphic and preferred embodiment as after.
[accompanying drawing summary]
Fig. 1 is the schematic diagram of the encapsulating structure of existing great power LED, and wherein the LED luminescent layer 100, LED substrate 120, elargol layer 130, heat-conducting layer 140.
Fig. 2 is the schematic diagram of encapsulating structure of the light-emitting diode of a preferred embodiment of the present invention, and wherein crystal grain 10, luminescent layer 11, substrate 12, tin paste layer 20, heat-conducting layer 30, support 40.
Fig. 3 is the schematic flow sheet of the light emitter diode seal method of another embodiment of the present invention.
[execution mode]
See also Fig. 2, it has illustrated the schematic diagram of encapsulating structure of the light-emitting diode of a preferred embodiment of the present invention.
As shown in the figure, the encapsulating structure of light-emitting diode of the present invention comprises: a crystal grain 10; One tin paste layer 20; An and heat-conducting layer 30.
Wherein, this crystal grain 10 can be for sending electroluminescence, and it further comprises: a luminescent layer 11; An and substrate 12.Wherein, this luminescent layer 11 is for example and without limitation to an InGaN (InGaN) crystal grain, is that example is illustrated with InGaN crystal grain in the present embodiment, but not as limit; This substrate 12 is to place under this luminescent layer 11, and combining of this crystal grain 10 and this tin paste layer 20 can be provided, and it is for example and without limitation to a sapphire (Al
2O
3) structure, copper alloy or monocrystalline silicon.The thickness of this tin paste layer 20 can be half of these crystal grain 10 height, is for example and without limitation to 0.02mm.
This tin paste layer 20 be place these chip 10 bottoms and around, can be for this chip 10 be combined with at least one support 40, wherein this support 40 is for example and without limitation to the positive and negative electrode pin of this light-emitting diode.
This heat-conducting layer 30 is also referred to as heat sink, and it is the bottom that places this tin paste layer 20, and the heat conduction approach of this crystal grain 10 can be provided.
Tin cream commonly used when the present invention selects printed circuit board (PCB) processing for use is (no matter be that lead or lead-free tin cream are arranged, effect is the same, if consider that the environmental protection factor then can select lead-free tin cream for use) replace the elargol layer of using in the known package structure, this is the very idea and the application of innovation, so use two advantages are arranged: first advantage is that tradition is used elargol layer (as shown in fig. 1 130), must put into baking box more than 110 ℃, place more than 90～120 minutes, elargol is solidified, so LED crystal grain 10 could be fixed on the led support, now use tin cream, then as long as transient heating to 170～240 ℃ (about 5～15 seconds), tin cream can be fixed on LED crystal grain on the led support 40, so can shorten the encapsulation procedure time of LED; The coefficient of heat conduction that second advantage is tin paste layer 20 is about 45W/m ℃, and thickness is about 0.02mm, and then the thermal resistance of this layer only is 0.44 ℃/W, can significantly improve the packaging thermal resistance of LED, to reach the purpose that significantly reduces packaging thermal resistance, as shown in Table 2:
Table two
The overall package thermal resistance of LED encapsulation is reduced to 3.06 ℃/W, and therefore, it is over half effectively to reduce LED overall package thermal resistance.
In addition, can understand by table one, LED crystal grain 10 uses sapphire as substrate 12, its thermal resistance is still not little, though sapphire is transparent for visible light, the blue light that can increase blue-ray LED crystal grain 10 takes out efficient, but because of its thermal resistance not little, Yin Wendu rising in use still causes luminous efficiency to reduce phenomenon, therefore some LED crystal grain manufacturer uses the substrate 12 of the material of some high heat-conduction coefficients as blue-ray LED crystal grain 10, as copper alloy or monocrystalline silicon, though the material of high heat-conduction coefficient may be opaque (can't penetrate) for blue light, but LED crystal grain manufacturer can add one deck reflector (not shown) under luminescent layer, the light that is produced is all guided toward positive (top), significantly to reduce the light tight influence that is produced of substrate, thus, substrate 12 materials of employed LED crystal grain 10, as copper alloy (coefficient of heat conduction is 264W/m ℃), monocrystalline silicon (coefficient of heat conduction is 146W/m ℃), its coefficient of heat conduction is all big a lot of than sapphire 12 (coefficient of heat conduction is 45W/m ℃), therefore can further effectively reduce the packaging thermal resistance of LED encapsulation, details are shown in table three and table four:
Table three
With the substrate 12 of copper alloy as LED crystal grain 10, then the overall package thermal resistance of LED encapsulation is reduced to 1.06 ℃/W.
Table four
With the substrate 12 of monocrystalline silicon as LED crystal grain 10, then the overall package thermal resistance of LED encapsulation can be reduced to 1.36 ℃/W.
By table three and table four as can be seen, if the material of high heat-conduction coefficient is used in the substrate of LED crystal grain 10 12, then in the overall thermal resistance of LED encapsulation, when using tin paste layer 20 as the binder course of LED crystal grain 10 and led support 40, its contribution to thermal resistance is very important again, at this moment, can increase the use amount of tin paste layer 20, can be added to 90% of LED die thickness at most, as shown in Figure 2.
Now suppose when LED encapsulates, tin paste layer 20 use amounts are increased to half of LED crystal grain 10 thickness, the heat that the time produced in work of LED crystal grain 10 then, its heat radiation approach becomes two, one of them follows original approach, another then dispels the heat toward increasing tin paste layer 20 paths of coming out, then the calculating of thermal resistance shown in table five and table six (wherein, the first half of LED crystal grain 10 thickness is co-routes, this outer pathway one is that another path is additional tin paste layer 20 parts through the Lower Half of LED crystal grain 10 and the tin paste layer 20 of LED crystal grain 10 belows).
Table five
With the substrate 12 of copper alloy as LED crystal grain 10, then the overall package thermal resistance of LED encapsulation is reduced to 0.61 ℃/W.
Table six
With the substrate 12 of monocrystalline silicon as LED crystal grain 10, then the overall package thermal resistance of LED encapsulation is reduced to 0.78 ℃/W.
By table five and table six as can be seen, the use amount of tin paste layer 20 is increased to a half of LED crystal grain 10 thickness, can effectively reduce more than 30～40% of overall package thermal resistance of LED encapsulation, this is a very effective design of overall package thermal resistance that reduces the LED encapsulation, also is new a kind of encapsulation kenel.Therefore, the encapsulating structure of light-emitting diode of the present invention really can improve the shortcoming of the encapsulating structure of known luminescence diode.
In addition, the present invention also provides a kind of light emitter diode seal method.Please refer to Fig. 3, it has illustrated the schematic flow sheet of the light emitter diode seal method of another embodiment of the present invention.As shown in the figure, light emitter diode seal method of the present invention comprises the following steps: to provide a chip 10, and it can be for sending electroluminescence (step 1); With a tin paste layer 20 place these chip 10 bottoms and around, combine (step 2) for this chip 10 with at least one support 40; And a heat-conducting layer 30 placed the bottom of this tin paste layer 20, so that the heat conduction approach (step 3) of this chip 10 to be provided.
In this step 1, a chip 10 is provided, it can be for sending electroluminescence; Wherein, this crystal grain 10 can be for sending electroluminescence, and it further comprises: a luminescent layer 11; An and substrate 12.Wherein, this luminescent layer 11 is for example and without limitation to an InGaN (InGaN) crystal grain; This substrate 12 is to place under this luminescent layer 11, and combining of this crystal grain 10 and this tin paste layer 20 can be provided, and it is for example and without limitation to a sapphire (Al
2O
3) structure, copper alloy or monocrystalline silicon.
In this step 2, with a tin paste layer 20 place these chip 10 bottoms and around, combine with at least one support 40 for this chip 10; Wherein, the thickness of this tin paste layer 20 can be half of these crystal grain 10 height, be for example and without limitation to 0.02mm, and this support 40 is for example and without limitation to the positive and negative electrode pin of this light-emitting diode.
In this step 3, a heat-conducting layer 30 is placed the bottom of this tin paste layer 20, so that the heat conduction approach of this chip 10 to be provided; Wherein, this heat-conducting layer 30 is also referred to as heat sink, and it is the bottom that places this tin paste layer 20, and the heat conduction approach of this crystal grain 10 can be provided.
Therefore, via the enforcement of the encapsulating structure of light-emitting diode of the present invention, can significantly reduce the packaging thermal resistance of light-emitting diode; And with tin paste layer replacement elargol layer, except that can reducing the heating required time, also can reduce production costs, therefore, really can improve the shortcoming of the encapsulating structure of known luminescence diode.
Claims (12)
1. the encapsulating structure of a light-emitting diode, it comprises:
One crystal grain, it can be for sending electroluminescence;
One tin paste layer, its be place this crystal grain bottom and around, can be for this crystal grain is combined with at least one support; And
One heat-conducting layer, it is the bottom that places this tin paste layer, and the heat conduction approach of this crystal grain can be provided.
2. the encapsulating structure of light-emitting diode as claimed in claim 1, wherein this crystal grain further comprises:
One luminescent layer, it can be for sending electroluminescence; And
One substrate, it is to place under this luminescent layer, and combining of this crystal grain and this tin paste layer can be provided.
3. the encapsulating structure of light-emitting diode as claimed in claim 2, wherein this luminescent layer is an InGaN crystal grain.
4. the encapsulating structure of light-emitting diode as claimed in claim 2, wherein this substrate is a sapphire structures, copper alloy or monocrystalline silicon.
5. the encapsulating structure of light-emitting diode as claimed in claim 1, wherein the thickness of this tin paste layer is half of this crystal grain height, can reach 90% of crystal grain height at most.
6. the encapsulating structure of light-emitting diode as claimed in claim 5, wherein the thickness of this tin paste layer is 0.02mm.
7. light emitter diode seal method, it comprises the following steps:
One crystal grain is provided, and it can be for sending electroluminescence;
With a tin paste layer place this crystal grain bottom and around, combine with at least one support for this crystal grain; And
One heat-conducting layer is placed the bottom of this tin paste layer, so that the heat conduction approach of this crystal grain to be provided.
8. light emitter diode seal method as claimed in claim 7, wherein this crystal grain further comprises:
One luminescent layer, it can be for sending electroluminescence; And
One substrate, it is to place under this luminescent layer, and combining of this crystal grain and this tin paste layer can be provided.
9. light emitter diode seal method as claimed in claim 8, wherein this luminescent layer is an InGaN crystal grain.
10. light emitter diode seal method as claimed in claim 8, wherein this substrate is a sapphire structures, copper alloy or monocrystalline silicon.
11. light emitter diode seal method as claimed in claim 7, wherein the thickness of this tin paste layer is half of this crystal grain height, can reach 90% of crystal grain height at most.
12. light emitter diode seal method as claimed in claim 11, wherein the thickness of this tin paste layer is 0.02mm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102121753A CN101350393B (en) | 2008-09-10 | 2008-09-10 | Encapsulation structure for LED and method thereof |
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|---|---|---|---|
| CN2008102121753A CN101350393B (en) | 2008-09-10 | 2008-09-10 | Encapsulation structure for LED and method thereof |
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| CN101350393A CN101350393A (en) | 2009-01-21 |
| CN101350393B true CN101350393B (en) | 2010-10-13 |
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| CN102332526B (en) * | 2010-07-14 | 2015-01-07 | 展晶科技(深圳)有限公司 | Flip-chip light-emitting diode (LED) packaging structure |
| CN102339944A (en) * | 2010-07-29 | 2012-02-01 | 富士迈半导体精密工业（上海）有限公司 | Encapsulating structure of light-emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170152A (en) * | 2006-10-26 | 2008-04-30 | 江苏稳润光电有限公司 | Heat radiation method for LED high-power tube wafer |
| CN101171321A (en) * | 2005-04-01 | 2008-04-30 | 三菱化学株式会社 | Alloy powder for raw material of inorganic functional material and phosphor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101171321A (en) * | 2005-04-01 | 2008-04-30 | 三菱化学株式会社 | Alloy powder for raw material of inorganic functional material and phosphor |
| CN101170152A (en) * | 2006-10-26 | 2008-04-30 | 江苏稳润光电有限公司 | Heat radiation method for LED high-power tube wafer |
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