CN106409924A - Solar photovoltaic panel - Google Patents
Solar photovoltaic panel Download PDFInfo
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- CN106409924A CN106409924A CN201611061470.4A CN201611061470A CN106409924A CN 106409924 A CN106409924 A CN 106409924A CN 201611061470 A CN201611061470 A CN 201611061470A CN 106409924 A CN106409924 A CN 106409924A
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- photovoltaic panel
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- illumination adjusting
- adjusting structure
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- 238000005286 illumination Methods 0.000 claims abstract description 51
- 238000006243 chemical reaction Methods 0.000 claims abstract description 41
- 230000005540 biological transmission Effects 0.000 claims abstract description 24
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 47
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 47
- 230000009365 direct transmission Effects 0.000 claims description 24
- 239000003795 chemical substances by application Substances 0.000 claims description 22
- 239000007822 coupling agent Substances 0.000 claims description 21
- 239000011148 porous material Substances 0.000 claims description 19
- 229920003023 plastic Polymers 0.000 claims description 14
- 239000004033 plastic Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
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- 238000004132 cross linking Methods 0.000 claims description 7
- 230000005693 optoelectronics Effects 0.000 claims description 6
- -1 phenyl vinyl Chemical group 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 238000012986 modification Methods 0.000 claims description 5
- 230000004048 modification Effects 0.000 claims description 5
- 230000008595 infiltration Effects 0.000 claims description 4
- 238000001764 infiltration Methods 0.000 claims description 4
- 229910018134 Al-Mg Inorganic materials 0.000 claims description 3
- 229910018467 Al—Mg Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000006260 foam Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 230000005622 photoelectricity Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 2
- 238000010248 power generation Methods 0.000 abstract 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
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- MJULMZZKFYNTHK-UHFFFAOYSA-N ethenyl(phenyl)silicon Chemical compound C=C[Si]C1=CC=CC=C1 MJULMZZKFYNTHK-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
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- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The invention discloses a solar photovoltaic panel, which at least comprises a photoelectric conversion structure and an illumination adjusting structure. The photoelectric conversion structure and the illumination adjusting structure are in parallel stack arrangement. The illumination adjusting structure has a one-way transmission function for the light, and the transmission direction is the direction from the illumination adjusting structure to the photoelectric conversion structure. Through the illumination adjusting structure having the one-way ray transmission function, one-way transmission of the sunlight is realized in the use process, thereby reducing generation of scattering and reflection and the like; solar energy utilization efficiency is high, and power generation efficiency is high; and meanwhile, the solar photovoltaic panel has good heat radiation performance.
Description
Technical field
The present invention relates to a kind of semiconductor solar photovoltaic apparatus assembly, particularly a kind of solar energy photovoltaic panel.
Background technology
Solar module is a kind of device that solar energy is converted into electric energy due to photovoltaic effect,
Solar energy is a kind of novel energy, has permanent, spatter property and the big advantage of motility three.The life-span ratio of solar module
Longer, its mainly by low ferrum ultrawhite safety glass, EVA adhesive film, crystal silicon solar energy battery array and backboard in certain temperature
Under degree, pressure and vacuum condition, melting, bonding form rigid overall structure.Consider solar module making in practice
With effect, unit area power output has become as one of important parameter evaluating photovoltaic module.Simultaneously it is considered to monocrystal silicon, many
The factors such as the shortage of crystal silicon raw material, chip high cost and reduction production cost, must improve in existing technical foundation
The electricity conversion of solar module, i.e. efficient solar module.It is appreciated that solar components
Efficiency not only affected by light efficiency, the temperature of assembly equally can produce large effect to generating efficiency.
Content of the invention
For solving the above problems, the invention discloses a kind of solar energy photovoltaic panel, photovoltaic illumination efficiency height, product structure is steady
Qualitative good, avoid, in product surface, strong reflection occurs simultaneously, and avoid light pollution and light energy to consume in scattering, generate electricity
Efficiency high, has good heat dispersion, long service life simultaneously, stablizes in life span internal efficiency, is not susceptible to damage.
Solar energy photovoltaic panel disclosed by the invention, at least includes photovoltaic conversion structure and Illumination adjusting structure, opto-electronic conversion
Abreast it is stacked between structure and Illumination adjusting structure, wherein Illumination adjusting structure has the direct transmission work(to light
Can, and this transmission direction is to point to, by Illumination adjusting structure, the direction that photovoltaic conversion structure is located.
The present invention program passes through the Illumination adjusting structure of setting, in the generation direct transmission behavior of photovoltaic plate surface to be
Light cannot be changed laterally by the external world's unidirectional entrance photovoltaic conversion structure again, and reduces photovoltaic conversion structure (as quasiconductor
Functional silicon unit etc.) photon acceptor efficiency, thus lifting effective work efficiency of unit area, thus as much as possible lifting produce
The photoelectric transformation efficiency of product.
A kind of improvement of solar energy photovoltaic panel disclosed by the invention, Illumination adjusting structure includes least one layer of direct transmission
Film：When having multilamellar direct transmission film, it is stacked and each layer of transmission direction is all to point to light by Illumination adjusting structure
The direction that electric transformational structure is located.This programme passes through the multilamellar direct transmission knot by setting for the multilamellar direct transmission film of setting
Structure is it is achieved that multiple precise controlling to optical transport behavior, thus the regulation and control by transmission direction to the light distribution of natural light
It is adjusted, and realize the steady operation in whole product photovoltaic conversion structure gamut, to avoid illumination patterns uneven, from
And lift photovoltaic efficiency, further reduce direct reflection loss, and this multiple structure can also strengthen the wear-resistant of equipment
Performance, greatly increases the service life.
A kind of improvement of solar energy photovoltaic panel disclosed by the invention, when Illumination adjusting structure has multilamellar direct transmission film
It is stacked and each layer of transmission direction all same.
A kind of improvement of solar energy photovoltaic panel disclosed by the invention, Illumination adjusting structure is immediate with photovoltaic conversion structure
The total reflection structure of inner side setting oriented photovoltaic conversion structure place side total reflection.This programme passes through to be arranged on being all-trans of inner side
Penetrate structure so that the illumination that is irradiated in photovoltaic conversion structure, be totally reflected structure when being reflected off and be further reflected back
Answer in transformational structure, and further reduce reflection loss, to lift photoelectric transformation efficiency.
A kind of improvement of solar energy photovoltaic panel disclosed by the invention, solar energy photovoltaic panel also includes EVA layer, and it is to expose table
Bread is covered with the height thermally-stabilised modified EVA plastic layer of radiating of oxygen barrier layer, and EVA layer fits in photovoltaic conversion structure back.
A kind of improvement of solar energy photovoltaic panel disclosed by the invention, the height thermally-stabilised modified EVA plastic layer of radiating of EVA layer
Composition includes, in parts by weight：100 parts of ethylene-vinyl acetate copolymer, crosslinking and curing agent 1-2 part, heat stabilizer 0.2-0.5
Part, thermal conducting agent 5-10 part, phenyl vinyl polysiloxane 15-20 part.
A kind of improvement of solar energy photovoltaic panel disclosed by the invention, the height of EVA layer radiates in thermally-stabilised modified EVA plastic layer
Thermal conducting agent includes the porous material through coupling agent pretreatment, and porous material includes porous oxidation zinc powder and porous oxidation aluminium powder
End, in thermal conducting agent, its composition is included, in terms of parts by weight：Porous oxidation zinc powder 10-20 part；Porous oxidation aluminium powder 20-
30 parts.
Theoretical from Semiconductor Physics, the diffusion coefficient of carrier slightly increases with the rising of temperature, therefore, photoproduction
Electric current IL also increased with the rising of temperature.But Io is that index increases with the rising of temperature, thus Uoc is anxious with the rising of temperature
Acute decline.Thus, when the temperature increases, I-U tracing pattern changes, and fill factor, curve factor declines, therefore optical electrical conversion efficiency is with temperature
Increase and decline.
Show, the rising of solar cell working temperature can cause a small amount of increase of short circuit current through research and test, and
Cause open-circuit voltage that serious reduction occurs.Why big temperature change is for the impact of open-circuit voltage, is because that open-circuit voltage is straight
The energy gap connecing the semi-conducting material of manufacture battery together is relevant, and energy gap is understood variation with temperature and changed.Right
For silicon materials, energy gap variation with temperature rate is about -0.003eV/ DEG C, thus leading to open circuit voltage variations rate about
For -2mV/ DEG C.That is, the operating temperature of battery often raises 1 DEG C, when open-circuit voltage about declines 2mV, about normal room temperature
The 0.4% of 0.55V.With the rising of temperature, the not bad continuous decrease of photoelectric transformation efficiency of battery.It can be seen that temperature control
Make the importance to solar battery efficiency and prominent meaning.
By the porous material with loose structure of setting, carried out with resin material by loose structure in EVA layer
Sufficiently contact, greatly increase radiating and heat transfer area, thus conduct, beneficial to raising, the heat that assembly produces in time dissipating
Send out, be conducive to the control to temperature, reduce the impact to assembly generating efficiency for the temperature factor, product can also be reduced simultaneously
Heat ageing speed, thus increasing the service life, reduces application cost.
A kind of improvement of solar energy photovoltaic panel disclosed by the invention, the height of EVA layer radiates in thermally-stabilised modified EVA plastic layer
The porous material of thermal conducting agent also includes the Al-Mg alloy foam powder 10-15 weight portion through coupling agent pretreatment.
By way of adopting the infiltration of coupling agent solution steam, surface preparation is carried out to improve itself and EVA to porous material
The compatibility, which can overcome inhibition to liquid phase coupling agent solution when micropore infiltrates for the surface tension, from
And lift the combination effect of material.
A kind of improvement of solar energy photovoltaic panel disclosed by the invention, coupling agent pretreatment is that porous material is molten through coupling agent
Liquid steam fully infiltrates, and the degree of infiltration is that porous material surface forms coupling agent thin layer after solvent is evaporated.In porous material
The porous surface of material forms the effective coupling agent layer of a thin layer, thus greatly reducing the consumption to coupling agent to avoid wave
Take, the pollution to environment for the excess of coupling agent can also be reduced simultaneously, this coupling agent thin layer also helps porous material and EVA simultaneously
When miscible, EVA enters surface micropore, also acts enhancing machine while the contact area raising heat transfer effect increasing material
The effect of tool performance.
Solar energy photovoltaic panel disclosed by the invention has that modular construction is firm stable, and light quality, by improving transmission bar
Part and enhance light conversion efficiency, and coordinate ad-hoc location setting total reflection structure, retrodirective reflection can be reduced, simultaneously
Improve the light distribution uniformity in the photovoltaic conversion structure on whole product, thus realizing overall uniform and stable generating,
And improve the unit efficiency of photovoltaic generation so that the Solar use efficiency high of photovoltaic panel, generating efficiency height, have good simultaneously
Good heat dispersion, long service life, stable in life span internal efficiency, it is not susceptible to damage.
Specific embodiment
With reference to specific embodiment, it is further elucidated with the present invention it should be understood that following specific embodiment is only used for
The bright present invention rather than restriction the scope of the present invention.
Constructive embodiment 1
Solar energy photovoltaic panel in the present embodiment, at least includes photovoltaic conversion structure and Illumination adjusting structure, and opto-electronic conversion is tied
Structure (can be monocrystal silicon thin layer or polycrystalline silicon thin layer or quasiconductor high polymer thin layer etc., similarly hereinafter) and Illumination adjusting structure
Abreast it is stacked between (can be colourless direct transmission film etc., similarly hereinafter), wherein Illumination adjusting structure has to light
Direct transmission function, and this transmission direction is to point to, by Illumination adjusting structure, the direction that photovoltaic conversion structure is located.
In including, without being limited to this programme, can also make specific product needs the necessity such as setting support, current collecting equipment
Or inessential structure, is not the necessary restriction of technical scheme here, and does not clearly limit.
Constructive embodiment 2
Solar energy photovoltaic panel in the present embodiment, at least includes photovoltaic conversion structure and Illumination adjusting structure, and opto-electronic conversion is tied
Structure (can be monocrystal silicon thin layer or polycrystalline silicon thin layer or quasiconductor high polymer thin layer etc., similarly hereinafter) and Illumination adjusting structure
Abreast it is stacked between (can be colourless direct transmission film etc., similarly hereinafter), wherein Illumination adjusting structure has to light
Direct transmission function, and this transmission direction is to point to, by Illumination adjusting structure, the direction that photovoltaic conversion structure is located, and illumination is adjusted
Nodule structure has one layer of direct transmission film.
Constructive embodiment 3
Solar energy photovoltaic panel in the present embodiment, at least includes photovoltaic conversion structure and Illumination adjusting structure, and opto-electronic conversion is tied
Structure (can be monocrystal silicon thin layer or polycrystalline silicon thin layer or quasiconductor high polymer thin layer etc., similarly hereinafter) and Illumination adjusting structure
Abreast it is stacked between (can be colourless direct transmission film etc., similarly hereinafter), wherein Illumination adjusting structure has to light
Direct transmission function, and this transmission direction is to point to, by Illumination adjusting structure, the direction that photovoltaic conversion structure is located, and illumination is adjusted
Nodule structure has the direct transmission film of two-layer overlapping setting：During this two layers of unidirectional transmission film, it is stacked and each layer of transmission
Direction is all to point to, by Illumination adjusting structure, the direction that photovoltaic conversion structure is located.
Constructive embodiment 4
Solar energy photovoltaic panel in the present embodiment, at least includes photovoltaic conversion structure and Illumination adjusting structure, and opto-electronic conversion is tied
Structure (can be monocrystal silicon thin layer or polycrystalline silicon thin layer or quasiconductor high polymer thin layer etc., similarly hereinafter) and Illumination adjusting structure
Abreast it is stacked between (can be colourless direct transmission film etc., similarly hereinafter), wherein Illumination adjusting structure has to light
Direct transmission function, and this transmission direction is to point to, by Illumination adjusting structure, the direction that photovoltaic conversion structure is located, and illumination is adjusted
Nodule structure has the direct transmission film of three layers (can also have more layers) overlapping setting：This three layers (when having more layers) are unidirectional
During transmission film, it is stacked and each layer of transmission direction is all to point to photovoltaic conversion structure by Illumination adjusting structure to be located
Direction.
With include, without being limited to what above-described embodiment distinguished, when Illumination adjusting structure has multilamellar direct transmission film its
Be stacked and each layer of transmission direction be all that the direction that photovoltaic conversion structure is located is pointed to by Illumination adjusting structure but not
It is all identical that (transmission direction including each layer all differs or has part identical situation；When partly identical, identical
Direct transmission film can identical setting can also interval setting).
With include, without being limited to what above-described embodiment distinguished, when Illumination adjusting structure has multilamellar direct transmission film its
It is stacked and each layer of transmission direction all same.
With include, without being limited to what above-described embodiment distinguished, Illumination adjusting structure is immediate with photovoltaic conversion structure interior
Side arranges the total reflection structure of oriented photovoltaic conversion structure place side total reflection.
With include, without being limited to what above-described embodiment distinguished, solar energy photovoltaic panel also includes EVA layer, its be exposed surface
It is coated with the height thermally-stabilised modified EVA plastic layer of radiating of oxygen barrier layer, EVA layer fits in photovoltaic conversion structure back.
Embodiment below in connection with EVA layer can be used in include, without being limited to said structure individually or simultaneously
Technical scheme described in embodiment, and the scope without departing from application claims.
EVA layer embodiment 1
In the present embodiment, the composition of the height thermally-stabilised modified EVA plastic layer of radiating of EVA layer includes (in parts by weight)：Second
100 parts of alkene-acetate ethylene copolymer, 1.5 parts of crosslinking and curing agent, 0.2 part of heat stabilizer, 9 parts of thermal conducting agent, phenyl vinyl silicon tree
15 parts of fat.
EVA layer embodiment 2
In the present embodiment, the composition of the height thermally-stabilised modified EVA plastic layer of radiating of EVA layer includes (in parts by weight)：Second
100 parts of alkene-acetate ethylene copolymer, 1.8 parts of crosslinking and curing agent, 0.5 part of heat stabilizer, 7 parts of thermal conducting agent, phenyl vinyl silicon tree
20 parts of fat.
EVA layer embodiment 3
In the present embodiment, the composition of the height thermally-stabilised modified EVA plastic layer of radiating of EVA layer includes (in parts by weight)：Second
100 parts of alkene-acetate ethylene copolymer, 1.2 parts of crosslinking and curing agent, 0.35 part of heat stabilizer, 8 parts of thermal conducting agent, phenyl vinyl silicon
18 parts of resin.
EVA layer embodiment 4
In the present embodiment, the composition of the height thermally-stabilised modified EVA plastic layer of radiating of EVA layer includes (in parts by weight)：Second
100 parts of alkene-acetate ethylene copolymer, 2 parts of crosslinking and curing agent, 0.4 part of heat stabilizer, 10 parts of thermal conducting agent, phenyl vinyl silicon tree
19 parts of fat.
EVA layer embodiment 5
In the present embodiment, the composition of the height thermally-stabilised modified EVA plastic layer of radiating of EVA layer includes (in parts by weight)：Second
100 parts of alkene-acetate ethylene copolymer, 1 part of crosslinking and curing agent, 0.3 part of heat stabilizer, 5 parts of thermal conducting agent, phenyl vinyl polysiloxane
16 parts.
Distinguish ground with EVA layer embodiment 1-5, EVA layer can also include the porous material through coupling agent pretreatment, many
Porous materials include porous oxidation zinc powder and porous oxidation aluminium powder, and in thermal conducting agent, its composition inclusion (in terms of parts by weight) is many
10 parts of hole Zinc oxide powder (can also be other any between 11,12,13,14,15,16,17,18,19,20 and 10-20 part
Value)；20 parts of porous oxidation aluminium powder (can also between 21,22,23,24,25,26,27,28,29,30 and 20-30 part its
Its arbitrary value).
Distinguish ground with previous embodiment, porous material also includes the Al-Mg alloy foam powder through coupling agent pretreatment
10 parts of (being counted with parts by weight) (can also be appointed for other between 11,12,13,14,15,11.7,13.4,14.2 and 10-15 part
Meaning value).
Distinguish ground with previous embodiment, coupling agent pretreatment is fully to soak porous material through coupling agent solution steam
Profit, the degree of infiltration is that porous material surface forms coupling agent thin layer after solvent is evaporated.
The solar energy photovoltaic panel that technical solution of the present invention is obtained, in Guangzhou Zhuhai area, test point is cloudless in summer, room temperature 30
More than degree Celsius, test under the conditions of mild wind 1-2 level.
The embodiment 11 being collectively formed with constructive embodiment 1 and EVA layer embodiment 1, through test, is obtained by this programme
Solaode when 25 degrees Celsius efficiency highest, output is maximum；Under 25 degrees Celsius, prove that light intensity is got over through test
High power is higher, meanwhile, under the conditions of equal illumination condition and equal cell area, output and prior art products phase
Relatively lifting more than 20% (such as monocrystalline silicon piece specification 125*62.5mm, piece number 4*9=36, irradiance 1000W/m2, ambient temperature
25 DEG C, during AM=15：The power of prior art solaode is about 50W, the power margin of tolerance：± 3%；Present techniques
The power of the solaode of embodiment 11 is about 62W, the power margin of tolerance：± 2.5%.Through test, the application is other
Embodiment is satisfied by the performance test of this place, and test performance be not less than shown under this place equal conditions).This place conclusion is same
It is applied to technical solution of the present invention and include, without being limited to the technical scheme of above-described embodiment composition in interior all technical schemes, this
Literary composition will not enumerate.
This place embodiment is in place of the claimed non-limit of technical scope midrange and in embodiment technology
The new technical scheme in scheme, the equal replacement of single or multiple technical characteristics being formed, equally all in application claims
In the range of protection；Simultaneously the present invention program all enumerate or unrequited embodiment in, in the same embodiment each
Parameter is merely representative of an example (i.e. a kind of feasible scheme) of its technical scheme, and does not exist strict between parameters
Cooperation and qualified relation, wherein each parameter can mutually replace when stating and asking without prejudice to axiom and the present invention, special declaration
Except.
Technological means disclosed in the present invention program are not limited only to the technological means disclosed in above-mentioned technological means, also include
The technical scheme being made up of above technical characteristic combination in any.The above is the specific embodiment of the present invention it should refer to
Go out, for those skilled in the art, under the premise without departing from the principles of the invention, can also make some
Improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (9)
1. a kind of solar energy photovoltaic panel, at least includes photovoltaic conversion structure and Illumination adjusting structure, described photovoltaic conversion structure and
Abreast it is stacked between Illumination adjusting structure, wherein Illumination adjusting structure has the direct transmission function to light, and
This transmission direction is to point to, by Illumination adjusting structure, the direction that photovoltaic conversion structure is located.
2. solar energy photovoltaic panel according to claim 1 is it is characterised in that described Illumination adjusting structure includes at least one of which
Direct transmission film：When having multilamellar direct transmission film, it is stacked and each layer of transmission direction is all by Illumination adjusting
Structure points to the direction that photovoltaic conversion structure is located.
3. solar energy photovoltaic panel according to claim 2 is it is characterised in that described have multilamellar list when Illumination adjusting structure
To during transmission film, it is stacked and each layer of transmission direction all same.
4. according to the arbitrary described solar energy photovoltaic panel of claim 1-3 it is characterised in that described Illumination adjusting structure and photoelectricity
The immediate inner side of transformational structure arranges the total reflection structure of oriented photovoltaic conversion structure place side total reflection.
5. solar energy photovoltaic panel according to claim 4 is it is characterised in that described solar energy photovoltaic panel also includes EVA layer,
It is coated with the height thermally-stabilised modified EVA plastic layer of radiating of oxygen barrier layer for exposed surface, and described EVA layer fits in opto-electronic conversion knot
Structure back.
6. solar energy photovoltaic panel according to claim 5 thermally-stabilised modification it is characterised in that the height of described EVA layer radiates
The composition of EVA plastic layer includes, in parts by weight：100 parts of ethylene-vinyl acetate copolymer, crosslinking and curing agent 1-2 part, heat is steady
Determine agent 0.2-0.5 part, thermal conducting agent 5-10 part, phenyl vinyl polysiloxane 15-20 part.
7. solar energy photovoltaic panel according to claim 6 thermally-stabilised modification it is characterised in that the height of described EVA layer radiates
In EVA plastic layer, thermal conducting agent includes the porous material through coupling agent pretreatment, and described porous material includes porous oxidation zinc powder
End and porous oxidation aluminium powder, in thermal conducting agent, its composition is included, in terms of parts by weight：Porous oxidation zinc powder 10-20 part；Many
Porous aluminum oxide powder 20-30 part.
8. solar energy photovoltaic panel according to claim 7 thermally-stabilised modification it is characterised in that the height of described EVA layer radiates
In EVA plastic layer, the porous material of thermal conducting agent also includes the Al-Mg alloy foam powder 10-15 weight portion through coupling agent pretreatment.
9. solar energy photovoltaic panel according to claim 8 is it is characterised in that described coupling agent pretreatment is by porous material
Fully infiltrate through coupling agent solution steam, the degree of infiltration is that porous material surface formation coupling agent is thin after solvent is evaporated
Layer.
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|---|---|---|---|
| CN201611061470.4A CN106409924A (en) | 2016-11-28 | 2016-11-28 | Solar photovoltaic panel |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872162A (en) * | 2014-03-18 | 2014-06-18 | 连云港神舟新能源有限公司 | Low-working-temperature solar cell module |
| CN105140323A (en) * | 2015-07-28 | 2015-12-09 | 宁波贝达新能源科技股份有限公司 | Efficient silicon solar module |
| CN205319176U (en) * | 2016-02-02 | 2016-06-15 | 浙江晶科能源有限公司 | Photovoltaic assembly |
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2016
- 2016-11-28 CN CN201611061470.4A patent/CN106409924A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872162A (en) * | 2014-03-18 | 2014-06-18 | 连云港神舟新能源有限公司 | Low-working-temperature solar cell module |
| CN105140323A (en) * | 2015-07-28 | 2015-12-09 | 宁波贝达新能源科技股份有限公司 | Efficient silicon solar module |
| CN205319176U (en) * | 2016-02-02 | 2016-06-15 | 浙江晶科能源有限公司 | Photovoltaic assembly |
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Application publication date: 20170215 |