CN206921831U - P-type PERC double-sided solar batteries and its component, system - Google Patents
P-type PERC double-sided solar batteries and its component, system Download PDFInfo
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- CN206921831U CN206921831U CN201720201399.9U CN201720201399U CN206921831U CN 206921831 U CN206921831 U CN 206921831U CN 201720201399 U CN201720201399 U CN 201720201399U CN 206921831 U CN206921831 U CN 206921831U
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Abstract
The utility model discloses a kind of p-type PERC double-sided solar batteries, include back of the body silver electrode, back of the body alum gate line, backside passivation layer, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode successively, described to carry on the back silver electrode and carry on the back alum gate line vertical connection, the spacing between the back of the body alum gate line is unequal;First laser slotted zones are formed by lbg to backside passivation layer, the back of the body alum gate line is connected by first laser slotted zones with P-type silicon;The first laser slotted zones include multigroup horizontally arranged first laser slotted unit, and each group of first laser slotted unit includes one or more horizontally arranged first laser fluting bodies, and the back of the body alum gate line is vertical with first laser fluting body.Accordingly, a kind of component and system using aforementioned p-type PERC double-sided solar batteries is also disclosed in the utility model.Simple in construction using the utility model, cost is relatively low, easy to spread, photoelectric transformation efficiency is high.
Description
Technical field
It the utility model is related to area of solar cell, more particularly to a kind of p-type PERC double-sided solar batteries and adopt
With the solar cell module of aforementioned p-type PERC double-sided solar batteries, using aforementioned p-type PERC double-sided solar batteries too
Positive energy system.
Background technology
Crystal silicon solar batteries are a kind of effectively absorption solar radiant energies, and electricity is converted optical energy into using photovoltaic effect
Can device, when solar irradiation is in semiconductor P-N junction, form new hole-electron pair, it is empty in the presence of P-N junction electric field
Cave flows to P areas by N areas, and electronics flows to N areas by P areas, and electric current is just formed after connecting circuit.
Conventional crystalline silicon solar cell substantially only with front passivating technique, is sunk in front side of silicon wafer with PECVD mode
One layer of silicon nitride of product, recombination rate of few son on preceding surface is reduced, can significantly lift the open-circuit voltage of crystal silicon battery and short
Road electric current, so as to lift the photoelectric transformation efficiency of crystal silicon solar battery.But because the back side of silicon chip is not passivated, opto-electronic conversion
The lifting of efficiency nevertheless suffers from limitation.
The double-sided solar battery structure of prior art:Substrate uses N-type silicon chip, when solar photon irradiates cell backside
When, caused carrier passes through the silicon chip that thickness is about 200 microns in N-type silicon chip, because N-type silicon chip minority carrier life is high, carries
It is low to flow sub- recombination rate, part carrier can reach positive p-n junction;The front of solar cell is main smooth surface, its
The ratio that conversion efficiency accounts for whole battery conversion efficiency is very high;The comprehensive function at the positive back side, so as to greatly improve the conversion of battery
Efficiency.But N-type silicon chip price is high, N-type double-side cell complex process;Therefore, the two-sided sun of high efficiency, low cost how is developed
The focus that energy battery turns into enterprise and researcher pays close attention to.
On the other hand, as the requirement more and more higher of the photoelectric transformation efficiency to crystal silicon battery, industry are being studied always
PERC carries on the back passivating solar battery technology.Industry main flow producer mainly will in exploitation one side PERC solar cells, the utility model
PERC high-efficiency batteries and double-side cell combine, it is intended to the higher PERC double-sided solars electricity of the comprehensive photoelectric transformation efficiency of exploitation
Pond.
For PERC double-sided solar batteries, because photoelectric transformation efficiency is high, while two-sided absorption sunshine, generated energy is more
Height, there is bigger use value in actual applications.Therefore, the utility model be directed to a kind of technique is simple, cost compared with
The p-type PERC double-sided solar batteries low, easy to spread, photoelectric transformation efficiency is high.
Utility model content
Technical problem to be solved in the utility model is, there is provided a kind of p-type PERC double-sided solar batteries, structure letter
Single, cost is relatively low, easy to spread, photoelectric transformation efficiency is high.
Technical problem to be solved in the utility model also resides in, there is provided a kind of p-type PERC double-sided solar battery components,
Simple in construction, cost is relatively low, easy to spread, photoelectric transformation efficiency is high.
Technical problem to be solved in the utility model also resides in, there is provided a kind of p-type PERC double-sided solar systems, structure
Simply, cost is relatively low, easy to spread, photoelectric transformation efficiency is high.
In order to solve the above-mentioned technical problem, the utility model provides a kind of p-type PERC double-sided solar batteries, wraps successively
Include back of the body silver electrode, back of the body alum gate line, backside passivation layer, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode, the back of the body
Silver electrode with the back of the body alum gate line vertical connection, it is described the back of the body alum gate line between spacing it is unequal;
The back of the body alum gate line can also be shaped form, arc, waveform etc..
First laser slotted zones are formed by lbg to backside passivation layer, the back of the body alum gate line is opened by first laser
Groove area is connected with P-type silicon;
The first laser slotted zones include multigroup horizontally arranged first laser slotted unit, and each group first is swashed
Light slotted unit includes one or more horizontally arranged first laser fluting bodies, and the back of the body alum gate line is opened with first laser
Cell body is vertical.
As the preferred embodiment of such scheme, the back of the body alum gate line is provided with grid line spine, the grid line spine and back of the body aluminium
Grid line connects;
The radical of the grid line spine is 1-20 bars, and the width of the grid line spine is 30-500 microns.
As the preferred embodiment of such scheme, the grid line spine and back of the body alum gate line vertical connection;
The 3rd lbg area is provided with below the grid line spine, the 3rd lbg area includes multigroup 3rd laser
Slotted unit, each group of the 3rd lbg unit include the 3rd lbg body that one or more vertical directions are set, institute
It is vertical with grid line spine to state the 3rd lbg body, the grid line spine is connected by the 3rd lbg body with P-type silicon.
As the preferred embodiment of such scheme, the pattern of the grid line spine is a continuous straight line or multiple line segment groups
Into dotted line;
The grid line spine is made up of silver paste, and its width is 30-60 microns;Or, the grid line spine is made up of aluminium paste, its
Width is 50-500 microns.
As the preferred embodiment of such scheme, the back of the body alum gate line is surrounded by alum gate housing, the alum gate housing with
Back of the body alum gate line, back of the body silver electrode are connected.
As the preferred embodiment of such scheme, the lower section of the alum gate housing is provided with second laser slotted zones, and described second
Lbg area includes the second laser slotted unit vertically or horizontally set, and each group of second laser slotted unit includes
The second laser fluting body that one or more is vertically or horizontally set, the alum gate housing hang down with second laser fluting body
Directly.
It is to be arranged in parallel as the preferred embodiment of such scheme, between the first laser slotted unit;Every one first swashs
In light slotted unit, to be set up in parallel, the first laser fluting body is in same level the first laser fluting body
Or stagger up and down;
Spacing between the first laser slotted unit is 0.5-50mm;
In each first laser slotted unit, the spacing between the first laser fluting body is 0.5-50mm;
The length of the first laser fluting body is 50-5000 microns, and width is 10-500 microns.
As the preferred embodiment of such scheme, the radical of the back of the body alum gate line is 30-500 bars, the width of the back of the body alum gate line
Spend and be less than the length of first laser fluting body for 30-500 microns, the width of the back of the body alum gate line.
Accordingly, a kind of PERC solar cell modules, including PERC solar cells and envelope is also disclosed in the utility model
Package material, the PERC solar cells are any of the above-described p-type PERC double-sided solar batteries.
Accordingly, a kind of PERC solar energy systems, including PERC solar cells, the PERC is also disclosed in the utility model
Solar cell is any of the above-described p-type PERC double-sided solar batteries.
Implement the utility model, have the advantages that:
The utility model to backside passivation layer by lbg by after silicon chip back side forms backside passivation layer, being formed
First laser slotted zones, aluminium paste is printed then along the vertical direction in laser scribing direction, aluminium paste is passed through slotted zones and P-type silicon
It is connected, obtains carrying on the back alum gate line.The PERC double-sided solar batteries are adopted by preparing battery grid line structure in front side of silicon wafer and the back side
With different from the conventional mode for printing aluminium paste, because the width of alum gate is much smaller than the length of first laser slotted zones, can be not required to
Accurate alignment is implemented to aluminium paste and first laser slotted zones, simplify laser technology and typography, reduce printing equipment
The difficulty of debugging, it is easy to the big production of industrialization.In addition, the first laser slotted zones beyond the aluminium paste area of coverage can increase the battery back of the body
Absorption of the surface to sunshine, improve the photoelectric transformation efficiency of battery.Spacing between the back of the body alum gate line is unequal, can root
The factually spacing distribution between border state of arts adjustment alum gate line, improves photoelectric transformation efficiency
In addition, in printing process, because the viscosity of aluminium paste is larger, the line width of half tone is again narrow, can occur aluminium once in a while
The situation of the disconnected grid of grid.There are the disconnected grid of black in the image that the disconnected grid of alum gate can cause EL to test.Meanwhile the disconnected grid of alum gate can influence battery again
Photoelectric transformation efficiency.Therefore, the utility model is set up grid line spine at back of the body alum gate line and set in the surrounding of back of the body alum gate line
There is alum gate housing, the grid line spine is connected with back of the body alum gate line, and the alum gate housing is connected with back of the body alum gate line, back of the body silver electrode,
Mulitpath is provided for the flowing of electronics more, is prevented the disconnected grid of alum gate from being influenceed to caused by cell photoelectric conversion efficiency, is kept away simultaneously
There are disconnected grid in the EL tests for exempting from battery.
The lower section of alum gate housing can be provided with second laser slotted zones, and the lower section of grid line spine is provided with the 3rd lbg
Area, it may not be necessary to accurate alignment is implemented to slurry and second laser slotted zones, the 3rd lbg area, simplifies laser technology
And typography, reduce the difficulty that printing equipment is debugged.In addition, second laser slotted zones beyond the slurry area of coverage, the 3rd
Lbg area can increase absorption of the battery back surface to sunshine, improve the photoelectric transformation efficiency of battery.
Therefore, the utility model is simple in construction, technique is simple, and cost is relatively low, easy to spread, photoelectric transformation efficiency is high.
Brief description of the drawings
Fig. 1 is a kind of sectional view of p-type PERC double-sided solar batteries of the utility model;
Fig. 2 is a kind of schematic diagram of the backside structure first embodiment of p-type PERC double-sided solar batteries of the utility model;
Fig. 3 is the schematic diagram of the embodiment of first laser slotted zones shown in Fig. 1 one;
Fig. 4 is the schematic diagram of another embodiment of first laser slotted zones shown in Fig. 1.
Fig. 5 is a kind of schematic diagram of the backside structure second embodiment of p-type PERC double-sided solar batteries of the utility model;
Fig. 6 is the schematic diagram of second laser slotted zones shown in Fig. 5;
Fig. 7 is the schematic diagram in the 3rd lbg area shown in Fig. 5.
Embodiment
It is new to this practicality below in conjunction with accompanying drawing to make the purpose of this utility model, technical scheme and advantage clearer
Type is described in further detail.
Existing one side solar cell is provided with the whole back side that full aluminum back electric field is covered in silicon chip at the back side of battery, entirely
The effect of aluminum back electric field is to improve open-circuit voltage Voc and short circuit current Jsc, forces minority carrier away from surface, Shao Shuozai
Flowing sub- recombination rate reduces, so as to improve battery efficiency on the whole.However, because full aluminum back electric field is light tight, therefore, there is full aluminium
The rear surface of solar cell of back of the body electric field can not absorb luminous energy, positive can only absorb luminous energy, and the synthesis photoelectric transformation efficiency of battery is difficult
To be greatly improved.
For above-mentioned technical problem, with reference to Fig. 1 and Fig. 2, the utility model provides a kind of p-type PERC double-sided solars electricity
Pond, include back of the body silver electrode 1, back of the body alum gate line 2, backside passivation layer 3, P-type silicon 4, N-type emitter stage 5, front side silicon nitride film 6, just successively
Silver electrode 7, described to carry on the back silver electrode 1 and carry on the back the vertical connection of alum gate line 2, the spacing between the back of the body alum gate line 2 is unequal.The back of the body
Spacing between alum gate line 2 is unequal, simplifies laser technology and typography, reduces the difficulty of printing equipment debugging, carries
High yield rate.
First laser slotted zones 8 are formed by lbg to backside passivation layer 3, the back of the body alum gate line 2 swashs by first
Light slotted zones 8 are connected with P-type silicon 4.Positive silver electrode 7 includes positive silver electrode main grid 7A and positive silver electrode pair grid 7B.The back side is blunt
Changing layer 3 includes alumina layer 31 and silicon nitride layer 32.
The utility model is improved to existing one side PERC solar cells, no longer provided with full aluminum back electric field, but
Become many back of the body alum gate lines 2, first laser slotted zones 8 are overleaf opened up using lbg technology on passivation layer 3, and
Back of the body alum gate line 2 is printed on the first laser slotted zones 8 that these be arranged in parallel, close so as to form localized contact with P-type silicon 4
The back of the body alum gate line 2 of collection parallel arrangement, which can not only play, improves open-circuit voltage Voc and short circuit current Jsc, reduces minority carrier and answers
Conjunction rate, the effect of cell photoelectric conversion efficiency, the full aluminum back electric field of alternative existing one side battery structure are improved, and carry on the back alum gate
Line 2 does not cover the back side of silicon chip comprehensively, and sunshine can be projected in silicon chip between back of the body alum gate line 2, so as to realize that silicon chip is carried on the back
Face absorbs luminous energy, greatly improves the photoelectric transformation efficiency of battery.
As shown in Figure 3,4, the first laser slotted zones 8 include multigroup horizontally arranged first laser slotted unit
81, each group of first laser slotted unit 81 includes one or more horizontally arranged first laser fluting bodies 82, described
It is vertical with first laser fluting body 82 to carry on the back alum gate line 2.Fig. 3, the dotted line frame shown in 4 are first laser slotted unit 81, each group
First laser slotted unit 81 includes one or more horizontally arranged first laser fluting bodies 82.
It should be noted that first laser slotted unit 81 has numerous embodiments, including:
(1)Each group of first laser slotted unit 81 includes a horizontally arranged first laser fluting body 82, this
When, first laser slotted unit 81 is continuous straight line slotted zones, specific as shown in Figure 4.Multiple first laser slotted units 81
Along vertical direction arranged.
(2)Each group of first laser slotted unit 81 includes multiple horizontally arranged first laser fluting bodies 82, this
When, first laser slotted unit 81 is the discrete straight line slotted zones of line segment formula, specific as shown in Figure 3.The plurality of first laser
Body 82 of slotting can be two, three, four or more, but not limited to this.Multiple first laser slotted units 81 are along vertical
Direction arranged.
When each group of first laser slotted unit 81 slots body 82 including multiple horizontally arranged first lasers, its
It is divided into following several situations:
A, the width of multiple horizontally arranged first laser fluting bodies 82, length and shape are just as, its chi
Very little unit is micron level, and length can be 50-5000 microns, but not limited to this;It should be noted that the first laser is opened
Cell body may be in same level, can also stagger up and down(I.e. not in same level)On, its pattern being in staggered distribution
Depending on production needs.
B, the width of multiple horizontally arranged first laser fluting bodies 82, length and shape are just as, its chi
Very little unit is millimeter rank, and length can be 5-600 millimeters, but not limited to this;It should be noted that the first laser fluting
Body may be in same level, can also stagger up and down(I.e. not in same level)On, its pattern root being in staggered distribution
Depending on being needed according to production.
C, the width of multiple horizontally arranged first laser fluting bodies 82, length and/or shape are different, and it can
To be combined design according to production needs.It should be noted that the first laser fluting body may be at same level
On, it can also stagger up and down(I.e. not in same level)On, its pattern being in staggered distribution is depending on production needs.
As the utility model preferred embodiment, the first laser fluting body is linear pattern, convenient processing, is simplified
Technique, reduce production cost.First laser fluting body is it can also be provided that other shapes, such as shaped form, arc, wave
Shape etc., embodiments thereof are not limited to the utility model illustrated embodiment.The back of the body alum gate line can also be shaped form, arc
Shape, waveform etc..
To be arranged in parallel between the first laser slotted unit, in each first laser slotted unit, described first swashs
Light fluting body can simplify production technology, be adapted to large-scale promotion application to be set up in parallel.
Spacing between the first laser slotted unit is 0.5-50mm.It is described in each first laser slotted unit
Spacing between first laser fluting body is 0.5-50mm.
The length of the first laser fluting body 82 is 50-5000 microns, and width is 10-500 microns.Preferably, it is described
The length of first laser fluting body 82 is 250-1200 microns, and width is 30-80 microns.
Length, width and the spacing of first laser slotted unit and the radical and width of alum gate be consider alum gate with
Optimize on the basis of the contact area of P-type silicon, the shading-area of alum gate and abundant collection electronics, it is therefore an objective to drop as far as possible
The shading-area of low back side alum gate, while the electric current output ensured, and then lift the overall photoelectric transformation efficiency of battery.
The radical of the back of the body alum gate line be 30-500 bars, and the width for carrying on the back alum gate line is 30-500 microns, the back of the body aluminium
Length of the width of grid line much smaller than first laser fluting body.Preferably, the radical of the back of the body alum gate line is 80-220 bars,
The width of the back of the body alum gate line is 50-300 microns.
The width of the back of the body alum gate line is slotted much smaller than the length of first laser fluting body in alum gate and first laser
In the case that body is vertical, the printing issues of back of the body alum gate line can be greatly facilitated.Need not accurately it be aligned, alum gate can fall
In first laser slotted zones, laser technology and typography are simplified, the difficulty of printing equipment debugging is reduced, is easy to industrialization
Big production.
The utility model by lbg to backside passivation layer by forming first laser slotted zones, then along laser
The vertical direction printing aluminium paste in line direction, makes aluminium paste be connected by slotted zones with P-type silicon, obtains carrying on the back alum gate line.The PERC is double
Face solar cell in front side of silicon wafer and the back side by preparing battery grid line structure, using different from the conventional side for printing aluminium paste
Formula, it may not be necessary to accurate alignment is implemented to aluminium paste and first laser slotted zones, technique is simple, is easy to the big production of industrialization.Aluminium
Grid are parallel with first laser fluting body, and aluminium paste and first laser slotted zones need to implement accurate alignment, to the precision of printing equipment
Require very high with repeatability, yield rate is difficult to be controlled, and substandard products are more, causes the decline of average photoelectric transformation efficiency.Using
The utility model, yield rate can be improved to 99.5%.
Referring to Fig. 5, the utility model provides the second embodiment of backside structure, and it increases on the basis of first embodiment
Add alum gate housing 9 and grid line spine 10.Because in printing process, because the viscosity of aluminium paste is larger, the line width of half tone is again
It is narrow, can occur the situation of the disconnected grid of alum gate once in a while.There are the disconnected grid of black in the image that the disconnected grid of alum gate can cause EL to test.Meanwhile
The disconnected grid of alum gate can influence the photoelectric transformation efficiency of battery again.
Therefore, the utility model sets up grid line spine 10 at back of the body alum gate line 2, and is surrounded by aluminium in back of the body alum gate line 2
Grid housing 9, the alum gate housing 9 are connected with back of the body alum gate line 2, back of the body silver electrode 1, and the grid line spine 10 connects with back of the body alum gate line 2
Connect, mulitpath is provided more for the flowing of electronics, prevent the disconnected grid of alum gate from being influenceed to caused by cell photoelectric conversion efficiency, simultaneously
Avoid the EL of battery from testing and disconnected grid occur.Preferably, the grid line spine 10 and the vertical connection of back of the body alum gate line 2.Need what is illustrated
It is that the grid line spine 10 can also be connected with back of the body alum gate line 2 with certain angle of inclination, such as 15 °, 30 °, 45 ° 60 °, but
Not limited to this.The dotted line that the pattern of the grid line spine 10 forms for a continuous straight line or multiple line segments, the grid shown in Fig. 5
The pattern of line spine 10 is a continuous straight line.
Preferably, the lower section of alum gate housing 9 is provided with second laser slotted zones 90, and the lower section of grid line spine 10 is provided with the 3rd and swashed
Light slotted zones 11.
When it is provided with second laser slotted zones 90, the second laser slotted zones 90 include vertically or horizontally setting
Second laser slotted unit 91, each group of second laser slotted unit 91 include one or more and vertically or horizontally set
Second laser fluting body 92, the alum gate housing 9 and second laser body 92 of slotting is vertical.Specific to combine Fig. 6, described second swashs
Light slotted zones 90 include the second laser slotted unit 91A that two vertical directions set and two horizontally arranged second
Lbg unit 91B, the second laser slotted unit 91A that vertical direction is set include multiple horizontally arranged second and swashed
Light fluting body 92, horizontally arranged second laser slotted unit 91B include the second laser that multiple vertical directions are set and opened
Cell body 92.
When it is provided with second laser slotted zones 90, it may not be necessary to which it is accurate right that aluminium paste and second laser slotted zones are implemented
Standard, laser technology and typography are simplified, reduce the difficulty of printing equipment debugging.In addition, beyond the aluminium paste area of coverage
Dual-laser slotted zones can increase absorption of the battery back surface to sunshine, improve the photoelectric transformation efficiency of battery.
When the lower section of grid line spine 10 can be provided with the 3rd lbg area 11, as shown in fig. 7, the 3rd laser is opened
Groove area 11 includes multigroup 3rd lbg unit 12, and each group of the 3rd lbg unit 12 includes one or more vertical sides
To the 3rd lbg body 13 of setting, the 3rd lbg body 13 is vertical with grid line spine 10, the grid line spine 10
It is connected by the 3rd lbg body 13 with P-type silicon.
The lower section of grid line spine 10 is provided with the 3rd lbg area 11, it may not be necessary to slurry and the 3rd lbg area
11 implement accurate alignment, simplify laser technology and typography, reduce the difficulty of printing equipment debugging.In addition, slurry covers
The 3rd lbg area 11 beyond cover region can increase absorption of the battery back surface to sunshine, improve the opto-electronic conversion of battery
Efficiency.
It should be noted that the lower section of alum gate housing 9 can also be not provided with second laser slotted zones 90, grid line spine 10
Lower section can also be not provided with the 3rd lbg area 11.
Preferably, the radical of the grid line spine 10 is 1-20 bars, and the width of the grid line spine 10 is 30-500 microns,
The width of the grid line spine 10 is less than the length of the 3rd lbg body 13, in the lbg of grid line spine 10 and the 3rd
In the case that body 13 is vertical, the printing issues of grid line spine 10 can be greatly facilitated.Need not accurately it be aligned, grid line spine 10
It can fall in the 3rd lbg area 11, simplify laser technology and typography, reduce the difficulty of printing equipment debugging
Degree, is easy to the big production of industrialization.
The grid line spine 10 can both be made up of silver paste, can be made up again of aluminium paste.When the grid line spine 10 is by silver
When slurry is made, its width is 30-60 microns;When the grid line spine 10 is made up of aluminium paste, its width is 50-500 microns.
Further, the backside passivation layer 3 includes alumina layer 31 and silicon nitride layer 32, the alumina layer 31 and p-type
Silicon 4 is connected, and the silicon nitride layer 32 is connected with alumina layer 31;
The thickness of the silicon nitride layer 32 is 20-500nm;
The thickness of the alumina layer 31 is 2-50nm.
Preferably, the thickness of the silicon nitride layer 32 is 100-200nm;
The thickness of the alumina layer 31 is 5-30nm.
Accordingly, a kind of PERC solar cell modules, including PERC solar cells and envelope is also disclosed in the utility model
Package material, the PERC solar cells are any of the above-described p-type PERC double-sided solar batteries.Specifically, as PERC too
One embodiment of positive energy battery component, its height saturating safety glass, ethylene-vinyl acetate copolymer for being from top to bottom sequentially connected
EVA, PERC solar cell, ethylene-vinyl acetate copolymer EVA and high safety glass composition thoroughly.
Accordingly, a kind of PERC solar energy systems, including PERC solar cells, the PERC is also disclosed in the utility model
Solar cell is any of the above-described p-type PERC double-sided solar batteries.As a preferred embodiment of PERC solar energy systems,
Including PERC solar cells, batteries, charging-discharging controller inverter, AC power distribution cabinet/AC distribution panel and solar tracking control system.
Wherein, PERC solar energy systems can be provided with batteries, charging-discharging controller inverter, can not also set batteries, fill
Discharge controller inverter, those skilled in the art can be configured according to being actually needed.
It should be noted that in PERC solar cell modules, PERC solar energy systems, except the two-sided sun of p-type PERC
Part outside energy battery, is designed with reference to prior art.
Finally, it should be noted that above example is only illustrating the technical solution of the utility model rather than to this reality
With the limitation of novel protected scope, although being explained in detail with reference to preferred embodiment to the utility model, this area it is common
It will be appreciated by the skilled person that the technical solution of the utility model can be modified or equivalent substitution, without departing from this reality
With the spirit and scope of new technique scheme.
Claims (10)
1. a kind of p-type PERC double-sided solar batteries, it is characterised in that include back of the body silver electrode, back of the body alum gate line, passivating back successively
Layer, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode, the back of the body silver electrode and back of the body alum gate line vertical connection, it is described
The spacing carried on the back between alum gate line is unequal;
First laser slotted zones are formed by lbg to backside passivation layer, the back of the body alum gate line passes through first laser slotted zones
It is connected with P-type silicon;
The first laser slotted zones include multigroup horizontally arranged first laser slotted unit, and each group of first laser is opened
Groove unit includes one or more horizontally arranged first laser fluting bodies, the back of the body alum gate line and first laser fluting body
Vertically.
2. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the back of the body alum gate line is provided with grid line
Spine, the grid line spine are connected with back of the body alum gate line;
The radical of the grid line spine is 1-20 bars, and the width of the grid line spine is 30-500 microns.
3. p-type PERC double-sided solar batteries as claimed in claim 2, it is characterised in that the grid line spine and back of the body alum gate line
Vertical connection;
The 3rd lbg area is provided with below the grid line spine, the 3rd lbg area includes multigroup 3rd lbg
Unit, each group of the 3rd lbg unit include the 3rd lbg body that one or more vertical directions are set, and described the
Three lbg bodies are vertical with grid line spine, and the grid line spine is connected by the 3rd lbg body with P-type silicon.
4. p-type PERC double-sided solar batteries as claimed in claim 2, it is characterised in that the pattern of the grid line spine is one
The dotted line of the continuous straight line of bar or multiple line segments composition;
The grid line spine is made up of silver paste, and its width is 30-60 microns;Or, the grid line spine is made up of aluminium paste, its width
For 50-500 microns.
5. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the back of the body alum gate line is surrounded by
Alum gate housing, the alum gate housing are connected with back of the body alum gate line, back of the body silver electrode.
6. p-type PERC double-sided solar batteries as claimed in claim 5, it is characterised in that the lower section of the alum gate housing is provided with
Second laser slotted zones, the second laser slotted zones include the second laser slotted unit vertically or horizontally set, often
One group of second laser slotted unit includes one or more second laser fluting bodies vertically or horizontally set, the alum gate
Housing is vertical with second laser fluting body.
7. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the first laser slotted unit it
Between to be arranged in parallel;In each first laser slotted unit, the first laser fluting body is is set up in parallel, the first laser
Fluting body is in same level or staggered up and down;
Spacing between the first laser slotted unit is 0.5-50mm;
In each first laser slotted unit, the spacing between the first laser fluting body is 0.5-50mm;
The length of the first laser fluting body is 50-5000 microns, and width is 10-500 microns.
8. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the radical of the back of the body alum gate line is 30-
500, the width of the back of the body alum gate line is 30-500 microns, and the width of the back of the body alum gate line is less than first laser fluting body
Length.
A kind of 9. PERC solar cell modules, it is characterised in that including PERC solar cells and encapsulating material, the PERC
Solar cell is the p-type PERC double-sided solar batteries described in claim any one of 1-8.
10. a kind of PERC solar energy systems, including PERC solar cells, it is characterised in that the PERC solar cells are
P-type PERC double-sided solar batteries described in claim any one of 1-8.
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Cited By (3)
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CN108717950A (en) * | 2018-07-13 | 2018-10-30 | 天合光能股份有限公司 | Grid-breakage-preventing photovoltaic cell piece and photovoltaic cell assembly |
CN109065658A (en) * | 2018-07-12 | 2018-12-21 | 浙江爱旭太阳能科技有限公司 | A kind of p-type SE-PERC double-sided solar battery and preparation method thereof |
CN114664953A (en) * | 2020-11-30 | 2022-06-24 | 晶科能源(海宁)有限公司 | Solar cell module, solar cell and manufacturing method thereof |
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2017
- 2017-03-03 CN CN201720201399.9U patent/CN206921831U/en active Active
Cited By (5)
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CN109065658A (en) * | 2018-07-12 | 2018-12-21 | 浙江爱旭太阳能科技有限公司 | A kind of p-type SE-PERC double-sided solar battery and preparation method thereof |
CN108717950A (en) * | 2018-07-13 | 2018-10-30 | 天合光能股份有限公司 | Grid-breakage-preventing photovoltaic cell piece and photovoltaic cell assembly |
CN108717950B (en) * | 2018-07-13 | 2020-03-27 | 天合光能股份有限公司 | Grid-breakage-preventing photovoltaic cell piece and photovoltaic cell assembly |
CN114664953A (en) * | 2020-11-30 | 2022-06-24 | 晶科能源(海宁)有限公司 | Solar cell module, solar cell and manufacturing method thereof |
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