CN206921828U - P-type PERC double-sided solar batteries and its component, system - Google Patents

Abstract

The utility model discloses a kind of p-type PERC double-sided solar batteries, include back of the body silver electrode, back of the body alum gate line, backside passivation layer, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode successively, the back of the body silver electrode and back of the body alum gate line vertical connection, the back of the body alum gate line is provided with grid line spine, the back of the body alum gate line is surrounded by alum gate housing, the grid line spine is connected with back of the body alum gate line, and the alum gate housing is connected with back of the body alum gate line, back of the body silver electrode；First laser slotted zones are formed by lbg to backside passivation layer, the back of the body alum gate line is connected by first laser slotted zones with P-type silicon；The first laser slotted zones include multigroup horizontally arranged first laser slotted unit, and each group of first laser slotted unit includes one or more horizontally arranged first laser fluting bodies, and the back of the body alum gate line is vertical with first laser fluting body.Simple in construction using the utility model, cost is relatively low, easy to spread, photoelectric transformation efficiency is high.

Description

P-type PERC double-sided solar batteries and its component, system

Technical field

It the utility model is related to area of solar cell, more particularly to a kind of p-type PERC double-sided solar batteries and adopt With the solar cell module of aforementioned p-type PERC double-sided solar batteries, using aforementioned p-type PERC double-sided solar batteries too Positive energy system.

Background technology

Crystal silicon solar batteries are a kind of effectively absorption solar radiant energies, and electricity is converted optical energy into using photovoltaic effect Can device, when solar irradiation is in semiconductor P-N junction, form new hole-electron pair, it is empty in the presence of P-N junction electric field Cave flows to P areas by N areas, and electronics flows to N areas by P areas, and electric current is just formed after connecting circuit.

Conventional crystalline silicon solar cell substantially only with front passivating technique, is sunk in front side of silicon wafer with PECVD mode One layer of silicon nitride of product, recombination rate of few son on preceding surface is reduced, can significantly lift the open-circuit voltage of crystal silicon battery and short Road electric current, so as to lift the photoelectric transformation efficiency of crystal silicon solar battery.But because the back side of silicon chip is not passivated, opto-electronic conversion The lifting of efficiency nevertheless suffers from limitation.

The double-sided solar battery structure of prior art：Substrate uses N-type silicon chip, when solar photon irradiates cell backside When, caused carrier passes through the silicon chip that thickness is about 200 microns in N-type silicon chip, because N-type silicon chip minority carrier life is high, carries It is low to flow sub- recombination rate, part carrier can reach positive p-n junction；The front of solar cell is main smooth surface, its The ratio that conversion efficiency accounts for whole battery conversion efficiency is very high；The comprehensive function at the positive back side, so as to greatly improve the conversion of battery Efficiency.But N-type silicon chip price is high, N-type double-side cell complex process；Therefore, the two-sided sun of high efficiency, low cost how is developed The focus that energy battery turns into enterprise and researcher pays close attention to.

On the other hand, as the requirement more and more higher of the photoelectric transformation efficiency to crystal silicon battery, industry are being studied always PERC carries on the back passivating solar battery technology.Industry main flow producer mainly will in exploitation one side PERC solar cells, the utility model PERC high-efficiency batteries and double-side cell combine, it is intended to the higher PERC double-sided solars electricity of the comprehensive photoelectric transformation efficiency of exploitation Pond.

For PERC double-sided solar batteries, because photoelectric transformation efficiency is high, while two-sided absorption sunshine, generated energy is more Height, there is bigger use value in actual applications.Therefore, the utility model be directed to a kind of technique is simple, cost compared with The p-type PERC double-sided solar batteries low, easy to spread, photoelectric transformation efficiency is high.

Utility model content

Technical problem to be solved in the utility model is, there is provided a kind of p-type PERC double-sided solar batteries, structure letter Single, cost is relatively low, easy to spread, photoelectric transformation efficiency is high.

Technical problem to be solved in the utility model also resides in, there is provided a kind of p-type PERC double-sided solar battery components, Simple in construction, cost is relatively low, easy to spread, photoelectric transformation efficiency is high.

Technical problem to be solved in the utility model also resides in, there is provided a kind of p-type PERC double-sided solar systems, structure Simply, cost is relatively low, easy to spread, photoelectric transformation efficiency is high.

In order to solve the above-mentioned technical problem, the utility model provides a kind of p-type PERC double-sided solar batteries, wraps successively Include back of the body silver electrode, back of the body alum gate line, backside passivation layer, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode, the back of the body Silver electrode and back of the body alum gate line vertical connection, the back of the body alum gate line are provided with grid line spine, and the back of the body alum gate line is surrounded by aluminium Grid housing, the grid line spine are connected with back of the body alum gate line, and the alum gate housing is connected with back of the body alum gate line, back of the body silver electrode；

The back of the body alum gate line can also be shaped form, arc, waveform etc..

First laser slotted zones are formed by lbg to backside passivation layer, the back of the body alum gate line is opened by first laser Groove area is connected with P-type silicon；

The first laser slotted zones include multigroup horizontally arranged first laser slotted unit, and each group first is swashed Light slotted unit includes one or more horizontally arranged first laser fluting bodies, and the back of the body alum gate line is opened with first laser Cell body is vertical.

As the preferred embodiment of such scheme, the lower section of the alum gate housing is provided with second laser slotted zones, and described second Lbg area includes the second laser slotted unit vertically or horizontally set, and each group of second laser slotted unit includes The second laser fluting body that one or more is vertically or horizontally set, the alum gate housing hang down with second laser fluting body Directly.

As the preferred embodiment of such scheme, the grid line spine and back of the body alum gate line vertical connection；

The 3rd lbg area is provided with below the grid line spine, the 3rd lbg area includes multigroup 3rd laser Slotted unit, each group of the 3rd lbg unit include the 3rd lbg body that one or more vertical directions are set, institute It is vertical with grid line spine to state the 3rd lbg body, the grid line spine is connected by the 3rd lbg body with P-type silicon.

It is to be arranged in parallel as the preferred embodiment of such scheme, between the first laser slotted unit；Every one first swashs In light slotted unit, to be set up in parallel, the first laser fluting body is in same level the first laser fluting body Or stagger up and down；

Spacing between the first laser slotted unit is 0.5-50mm；

In each first laser slotted unit, the spacing between the first laser fluting body is 0.5-50mm；

The length of the first laser fluting body is 50-5000 microns, and width is 10-500 microns.

As the preferred embodiment of such scheme, the radical of the back of the body alum gate line is 30-500 bars, the root of the grid line spine Number is 30-500 bars；

The width of the back of the body alum gate line is 30-500 microns, and the width of the back of the body alum gate line is slotted less than the first laser The length of body；

The width of the grid line spine is 30-500 microns, and the width of the grid line spine is less than the 3rd lbg The length of body.

As the preferred embodiment of such scheme, the pattern of the grid line spine is a continuous straight line or multiple line segment groups Into dotted line；

The grid line spine is made up of silver paste, and its width is 30-60 microns；Or, the grid line spine is made up of aluminium paste, its Width is 50-500 microns.

Accordingly, a kind of PERC solar cell modules, including PERC solar cells and envelope is also disclosed in the utility model Package material, the PERC solar cells are any of the above-described p-type PERC double-sided solar batteries.

Accordingly, a kind of PERC solar energy systems, including PERC solar cells, the PERC is also disclosed in the utility model Solar cell is any of the above-described p-type PERC double-sided solar batteries.

Implement the utility model, have the advantages that：

The utility model to backside passivation layer by lbg by after silicon chip back side forms backside passivation layer, being formed First laser slotted zones, aluminium paste is printed then along the vertical direction in laser scribing direction, aluminium paste is passed through slotted zones and P-type silicon It is connected, obtains carrying on the back alum gate line.The PERC double-sided solar batteries are adopted by preparing battery grid line structure in front side of silicon wafer and the back side With different from the conventional mode for printing aluminium paste, because the width of alum gate is much smaller than the length of first laser slotted zones, can be not required to Accurate alignment is implemented to aluminium paste and first laser slotted zones, simplify laser technology and typography, reduce printing equipment The difficulty of debugging, it is easy to the big production of industrialization.In addition, the first laser slotted zones beyond the aluminium paste area of coverage can increase the battery back of the body Absorption of the surface to sunshine, improve the photoelectric transformation efficiency of battery.

In addition, in printing process, because the viscosity of aluminium paste is larger, the line width of half tone is again narrow, can occur aluminium once in a while The situation of the disconnected grid of grid.There are the disconnected grid of black in the image that the disconnected grid of alum gate can cause EL to test.Meanwhile the disconnected grid of alum gate can influence battery again Photoelectric transformation efficiency.Therefore, the utility model is set up grid line spine at back of the body alum gate line and set in the surrounding of back of the body alum gate line There is alum gate housing, the grid line spine is connected with back of the body alum gate line, and the alum gate housing is connected with back of the body alum gate line, back of the body silver electrode, Mulitpath is provided for the flowing of electronics more, is prevented the disconnected grid of alum gate from being influenceed to caused by cell photoelectric conversion efficiency, is kept away simultaneously There are disconnected grid in the EL tests for exempting from battery.

The lower section of alum gate housing can be provided with second laser slotted zones, and the lower section of grid line spine is provided with the 3rd lbg Area, it may not be necessary to accurate alignment is implemented to slurry and second laser slotted zones, the 3rd lbg area, simplifies laser technology And typography, reduce the difficulty that printing equipment is debugged.In addition, second laser slotted zones beyond the slurry area of coverage, the 3rd Lbg area can increase absorption of the battery back surface to sunshine, improve the photoelectric transformation efficiency of battery.

Therefore, the utility model is simple in construction, technique is simple, and cost is relatively low, easy to spread, photoelectric transformation efficiency is high.

Brief description of the drawings

Fig. 1 is a kind of sectional view of p-type PERC double-sided solar batteries of the utility model；

Fig. 2 is a kind of schematic diagram of the backside structure first embodiment of p-type PERC double-sided solar batteries of the utility model；

Fig. 3 is a kind of schematic diagram of the backside structure second embodiment of p-type PERC double-sided solar batteries of the utility model；

Fig. 4 is a kind of schematic diagram of the backside structure 3rd embodiment of p-type PERC double-sided solar batteries of the utility model；

Fig. 5 is a kind of showing for embodiment of first laser slotted zones one of p-type PERC double-sided solar batteries of the utility model It is intended to；

Fig. 6 is a kind of another embodiment in first laser slotted zones of p-type PERC double-sided solar batteries of the utility model Schematic diagram.

Fig. 7 is a kind of schematic diagram of the second laser slotted zones of p-type PERC double-sided solar batteries of the utility model；

Fig. 8 is a kind of schematic diagram in the 3rd lbg area of p-type PERC double-sided solar batteries of the utility model.

Embodiment

It is new to this practicality below in conjunction with accompanying drawing to make the purpose of this utility model, technical scheme and advantage clearer Type is described in further detail.

Existing one side solar cell is provided with the whole back side that full aluminum back electric field is covered in silicon chip at the back side of battery, entirely The effect of aluminum back electric field is to improve open-circuit voltage Voc and short circuit current Jsc, forces minority carrier away from surface, Shao Shuozai Flowing sub- recombination rate reduces, so as to improve battery efficiency on the whole.However, because full aluminum back electric field is light tight, therefore, there is full aluminium The rear surface of solar cell of back of the body electric field can not absorb luminous energy, positive can only absorb luminous energy, and the synthesis photoelectric transformation efficiency of battery is difficult To be greatly improved.

For above-mentioned technical problem, with reference to Fig. 1, the utility model provides a kind of p-type PERC double-sided solar batteries, successively Including back of the body silver electrode 1, back of the body alum gate line 2, backside passivation layer 3, P-type silicon 4, N-type emitter stage 5, front side silicon nitride film 6, positive silver electrode 7, the back of the body silver electrode 1 and the vertical connection of back of the body alum gate line 2, described carry on the back are provided with grid line spine 10, the grid line spine at alum gate line 2 10 are connected with back of the body alum gate line 2.The back of the body alum gate line is surrounded by alum gate housing 9, the alum gate housing 9 and back of the body alum gate line 2, the back of the body Silver electrode 1 is connected.

First laser slotted zones 8 are formed by lbg to backside passivation layer 3, the back of the body alum gate line 2 swashs by first Light slotted zones 8 are connected with P-type silicon 4.Positive silver electrode 7 includes positive silver electrode main grid 7A and positive silver electrode pair grid 7B.The back side is blunt Changing layer 3 includes alumina layer 31 and silicon nitride layer 32.

The utility model is improved to existing one side PERC solar cells, no longer provided with full aluminum back electric field, but Become many back of the body alum gate lines 2, first laser slotted zones 8 are overleaf opened up using lbg technology on passivation layer 3, and Back of the body alum gate line 2 is printed on the first laser slotted zones 8 that these be arranged in parallel, close so as to form localized contact with P-type silicon 4 The back of the body alum gate line 2 of collection parallel arrangement, which can not only play, improves open-circuit voltage Voc and short circuit current Jsc, reduces minority carrier and answers Conjunction rate, the effect of cell photoelectric conversion efficiency, the full aluminum back electric field of alternative existing one side battery structure are improved, and carry on the back alum gate Line 2 does not cover the back side of silicon chip comprehensively, and sunshine can be projected in silicon chip between back of the body alum gate line 2, so as to realize that silicon chip is carried on the back Face absorbs luminous energy, greatly improves the photoelectric transformation efficiency of battery.

As shown in Figure 2,3, 4, it is single to include multigroup horizontally arranged first laser fluting for the first laser slotted zones 8 Member 81, each group of first laser slotted unit 81 include one or more horizontally arranged first laser fluting bodies 82, institute It is vertical with first laser fluting body 82 to state back of the body alum gate line 2.Dotted line frame with reference to shown in Fig. 5,6, Fig. 5,6 is single for first laser fluting Member 81, each group of first laser slotted unit 81 include one or more horizontally arranged first laser fluting bodies 82.

In printing process, because the viscosity of aluminium paste is larger, the line width of half tone is again narrow, can occur the disconnected grid of alum gate once in a while Situation.There are the disconnected grid of black in the image that the disconnected grid of alum gate can cause EL to test.Meanwhile the disconnected grid of alum gate can influence the photoelectricity of battery again Conversion efficiency.Therefore, the utility model sets up grid line spine 10 at back of the body alum gate line 2, and is surrounded by aluminium in back of the body alum gate line 2 Grid housing 9, the alum gate housing 9 are connected with back of the body alum gate line 2, back of the body silver electrode 1, and the grid line spine 10 connects with back of the body alum gate line 2 Connect, mulitpath is provided more for the flowing of electronics, prevent the disconnected grid of alum gate from being influenceed to caused by cell photoelectric conversion efficiency, simultaneously Avoid the EL of battery from testing and disconnected grid occur.Preferably, the grid line spine 10 and the vertical connection of back of the body alum gate line 2.Need what is illustrated It is that the grid line spine 10 can also be connected with back of the body alum gate line 2 with certain angle of inclination, such as 15 °, 30 °, 45 ° 60 °, but Not limited to this.

The lower section of alum gate housing 9 can be provided with second laser slotted zones 90, and the lower section of grid line spine 10 can be provided with the 3rd Lbg area 11, the first embodiment of backside structure shown in Figure 3.The lower section of alum gate housing 9 can also be not provided with Dual-laser slotted zones 90, the lower section of grid line spine 10 can also be not provided with the 3rd lbg area 11, the back side shown in Figure 2 The second embodiment of structure.

The pattern of the grid line spine is the dotted line of a continuous straight line or multiple line segments composition, Fig. 2, the grid shown in 3 Line spine 10 is a continuous straight line, and the grid line spine 10 shown in Fig. 4 is the dotted line of multiple line segments composition.

When it is provided with second laser slotted zones 90, the second laser slotted zones 90 include vertically or horizontally setting Second laser slotted unit 91, each group of second laser slotted unit 91 include one or more and vertically or horizontally set Second laser fluting body 92, the alum gate housing 9 and second laser body 92 of slotting is vertical.Specific to combine Fig. 7, described second swashs Light slotted zones 90 include the second laser slotted unit 91A that two vertical directions set and two horizontally arranged second Lbg unit 91B, the second laser slotted unit 91A that vertical direction is set include multiple horizontally arranged second and swashed Light fluting body 92, horizontally arranged second laser slotted unit 91B include the second laser that multiple vertical directions are set and opened Cell body 92.

When it is provided with second laser slotted zones 90, it may not be necessary to which it is accurate right that aluminium paste and second laser slotted zones are implemented Standard, laser technology and typography are simplified, reduce the difficulty of printing equipment debugging.In addition, beyond the aluminium paste area of coverage Dual-laser slotted zones can increase absorption of the battery back surface to sunshine, improve the photoelectric transformation efficiency of battery.

When the lower section of grid line spine 10 can be provided with the 3rd lbg area 11, as shown in figure 8, the 3rd laser is opened Groove area 11 includes multigroup 3rd lbg unit 12, and each group of the 3rd lbg unit 12 includes one or more vertical sides To the 3rd lbg body 13 of setting, the 3rd lbg body 13 is vertical with grid line spine 10, the grid line spine 10 It is connected by the 3rd lbg body 13 with P-type silicon.

The lower section of grid line spine 10 is provided with the 3rd lbg area 11, it may not be necessary to slurry and the 3rd lbg area 11 implement accurate alignment, simplify laser technology and typography, reduce the difficulty of printing equipment debugging.In addition, slurry covers The 3rd lbg area 11 beyond cover region can increase absorption of the battery back surface to sunshine, improve the opto-electronic conversion of battery Efficiency.

Preferably, the radical of the grid line spine 10 is 30-500 bars, and the width of the grid line spine 10 is micro- for 30-500 Rice, the width of the grid line spine 10 is less than the length of the 3rd lbg body 13, in the laser of grid line spine 10 and the 3rd In the case that body 13 of slotting is vertical, the printing issues of grid line spine 10 can be greatly facilitated.Need not accurately it be aligned, grid line ridge Bone 10 can fall in the 3rd lbg area 11, simplify laser technology and typography, reduce printing equipment debugging Difficulty, be easy to the big production of industrialization.

The grid line spine 10 can both be made up of silver paste, can be made up again of aluminium paste.When the grid line spine 10 is by silver When slurry is made, its width is 30-60 microns；When the grid line spine 10 is made up of aluminium paste, its width is 50-500 microns.

It should be noted that first laser slotted unit 81 has numerous embodiments, including：

（1）Each group of first laser slotted unit 81 includes a horizontally arranged first laser fluting body 82, this When, first laser slotted unit 81 is continuous straight line slotted zones, specific as shown in Figure 6.Multiple first laser slotted units 81 Along vertical direction arranged.

（2）Each group of first laser slotted unit 81 includes multiple horizontally arranged first laser fluting bodies 82, this When, first laser slotted unit 81 is the discrete straight line slotted zones of line segment formula, specific as shown in Figure 5.The plurality of first laser Body 82 of slotting can be two, three, four or more, but not limited to this.Multiple first laser slotted units 81 are along vertical Direction arranged.

When each group of first laser slotted unit 81 slots body 82 including multiple horizontally arranged first lasers, its It is divided into following several situations：

A, the width of multiple horizontally arranged first laser fluting bodies 82, length and shape are just as, its chi Very little unit is micron level, and length can be 50-5000 microns, but not limited to this；It should be noted that the first laser is opened Cell body may be in same level, can also stagger up and down（I.e. not in same level）On, its pattern being in staggered distribution Depending on production needs.

B, the width of multiple horizontally arranged first laser fluting bodies 82, length and shape are just as, its chi Very little unit is millimeter rank, and length can be 5-600 millimeters, but not limited to this；It should be noted that the first laser fluting Body may be in same level, can also stagger up and down（I.e. not in same level）On, its pattern root being in staggered distribution Depending on being needed according to production.

C, the width of multiple horizontally arranged first laser fluting bodies 82, length and/or shape are different, and it can To be combined design according to production needs.It should be noted that the first laser fluting body may be at same level On, it can also stagger up and down（I.e. not in same level）On, its pattern being in staggered distribution is depending on production needs.

As the utility model preferred embodiment, the first laser fluting body is linear pattern, convenient processing, is simplified Technique, reduce production cost.First laser fluting body is it can also be provided that other shapes, such as shaped form, arc, wave Shape etc., embodiments thereof are not limited to the utility model illustrated embodiment.

To be arranged in parallel between the first laser slotted unit, in each first laser slotted unit, described first swashs Light fluting body can simplify production technology, be adapted to large-scale promotion application to be set up in parallel.

Spacing between the first laser slotted unit is 0.5-50mm.It is described in each first laser slotted unit Spacing between first laser fluting body is 0.5-50mm.

The length of the first laser fluting body 82 is 50-5000 microns, and width is 10-500 microns.Preferably, it is described The length of first laser fluting body 82 is 250-1200 microns, and width is 30-80 microns.

Length, width and the spacing of first laser slotted unit and the radical and width of alum gate be consider alum gate with Optimize on the basis of the contact area of P-type silicon, the shading-area of alum gate and abundant collection electronics, it is therefore an objective to drop as far as possible The shading-area of low back side alum gate, while the electric current output ensured, and then lift the overall photoelectric transformation efficiency of battery.

The radical of the back of the body alum gate line be 30-500 bars, and the width for carrying on the back alum gate line is 30-500 microns, the back of the body aluminium Length of the width of grid line much smaller than first laser fluting body.Preferably, the radical of the back of the body alum gate line is 80-220 bars, The width of the back of the body alum gate line is 50-300 microns.

The width of the back of the body alum gate line is slotted much smaller than the length of first laser fluting body in alum gate and first laser In the case that body is vertical, the printing issues of back of the body alum gate line can be greatly facilitated.Need not accurately it be aligned, alum gate can fall In first laser slotted zones, laser technology and typography are simplified, the difficulty of printing equipment debugging is reduced, is easy to industrialization Big production.

The utility model by lbg to backside passivation layer by forming first laser slotted zones, then along laser The vertical direction printing aluminium paste in line direction, makes aluminium paste be connected by slotted zones with P-type silicon, obtains carrying on the back alum gate line.The PERC is double Face solar cell in front side of silicon wafer and the back side by preparing battery grid line structure, using different from the conventional side for printing aluminium paste Formula, it may not be necessary to accurate alignment is implemented to aluminium paste and first laser slotted zones, technique is simple, is easy to the big production of industrialization.Aluminium Grid are parallel with first laser fluting body, and aluminium paste and first laser slotted zones need to implement accurate alignment, to the precision of printing equipment Require very high with repeatability, yield rate is difficult to be controlled, and substandard products are more, causes the decline of average photoelectric transformation efficiency.Using The utility model, yield rate can be improved to 99.5%.

Further, the backside passivation layer 3 includes alumina layer 31 and silicon nitride layer 32, the alumina layer 31 and p-type Silicon 4 is connected, and the silicon nitride layer 32 is connected with alumina layer 31；

The thickness of the silicon nitride layer 32 is 20-500nm；

The thickness of the alumina layer 31 is 2-50nm.

Preferably, the thickness of the silicon nitride layer 32 is 100-200nm；

The thickness of the alumina layer 31 is 5-30nm.

Accordingly, a kind of PERC solar cell modules, including PERC solar cells and envelope is also disclosed in the utility model Package material, the PERC solar cells are any of the above-described p-type PERC double-sided solar batteries.Specifically, as PERC too One embodiment of positive energy battery component, its height saturating safety glass, ethylene-vinyl acetate copolymer for being from top to bottom sequentially connected EVA, PERC solar cell, ethylene-vinyl acetate copolymer EVA and high safety glass composition thoroughly.

Accordingly, a kind of PERC solar energy systems, including PERC solar cells, the PERC is also disclosed in the utility model Solar cell is any of the above-described p-type PERC double-sided solar batteries.As a preferred embodiment of PERC solar energy systems, Including PERC solar cells, batteries, charging-discharging controller inverter, AC power distribution cabinet/AC distribution panel and solar tracking control system. Wherein, PERC solar energy systems can be provided with batteries, charging-discharging controller inverter, can not also set batteries, fill Discharge controller inverter, those skilled in the art can be configured according to being actually needed.

It should be noted that in PERC solar cell modules, PERC solar energy systems, except the two-sided sun of p-type PERC Part outside energy battery, is designed with reference to prior art.

Finally, it should be noted that above example is only illustrating the technical solution of the utility model rather than to this reality With the limitation of novel protected scope, although being explained in detail with reference to preferred embodiment to the utility model, this area it is common It will be appreciated by the skilled person that the technical solution of the utility model can be modified or equivalent substitution, without departing from this reality With the spirit and scope of new technique scheme.

Claims (7)

1. a kind of p-type PERC double-sided solar batteries, it is characterised in that include back of the body silver electrode, back of the body alum gate line, passivating back successively Layer, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode, the back of the body silver electrode and back of the body alum gate line vertical connection, it is described Back of the body alum gate line is provided with grid line spine, and the back of the body alum gate line is surrounded by alum gate housing, the grid line spine and back of the body alum gate line Connection, the alum gate housing are connected with back of the body alum gate line, back of the body silver electrode；

First laser slotted zones are formed by lbg to backside passivation layer, the back of the body alum gate line passes through first laser slotted zones It is connected with P-type silicon；

The first laser slotted zones include multigroup horizontally arranged first laser slotted unit, and each group of first laser is opened Groove unit includes one or more horizontally arranged first laser fluting bodies, the back of the body alum gate line and first laser fluting body Vertically.

2. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the lower section of the alum gate housing is provided with Second laser slotted zones, the second laser slotted zones include the second laser slotted unit vertically or horizontally set, often One group of second laser slotted unit includes one or more second laser fluting bodies vertically or horizontally set, the alum gate Housing is vertical with second laser fluting body.

3. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the grid line spine and back of the body alum gate line Vertical connection；

The 3rd lbg area is provided with below the grid line spine, the 3rd lbg area includes multigroup 3rd lbg Unit, each group of the 3rd lbg unit include the 3rd lbg body that one or more vertical directions are set, and described the Three lbg bodies are vertical with grid line spine, and the grid line spine is connected by the 3rd lbg body with P-type silicon.

4. p-type PERC double-sided solar batteries as claimed in claim 3, it is characterised in that the first laser slotted unit it Between to be arranged in parallel；In each first laser slotted unit, the first laser fluting body is is set up in parallel, the first laser Fluting body is in same level or staggered up and down；

Spacing between the first laser slotted unit is 0.5-50mm；

In each first laser slotted unit, the spacing between the first laser fluting body is 0.5-50mm；

The length of the first laser fluting body is 50-5000 microns, and width is 10-500 microns；

The radical of the back of the body alum gate line is 30-500 bars, and the radical of the grid line spine is 30-500 bars；

The width of the back of the body alum gate line is 30-500 microns, and the width of the back of the body alum gate line is less than first laser fluting body Length；

The width of the grid line spine is 30-500 microns, and the width of the grid line spine is less than the 3rd lbg body Length.

5. p-type PERC double-sided solar batteries as claimed in claim 4, it is characterised in that the pattern of the grid line spine is one The dotted line of the continuous straight line of bar or multiple line segments composition；

The grid line spine is made up of silver paste, and its width is 30-60 microns；Or, the grid line spine is made up of aluminium paste, its width For 50-500 microns.

6. a kind of PERC solar cell modules, including PERC solar cells and encapsulating material, it is characterised in that the PERC Solar cell is the p-type PERC double-sided solar batteries described in claim any one of 1-5.

7. a kind of PERC solar energy systems, including PERC solar cells, it is characterised in that the PERC solar cells are power Profit requires the p-type PERC double-sided solar batteries described in any one of 1-5.