A kind of Wet-method etching device improving wafer surface flatness
Technical field
The present invention relates to wet etching technique field, more particularly, to a kind of wet etching dress improving wafer surface flatness
Put.
Background technology
Current wet etching machine bench is usually eight cun or 12 cun, and the board type of its main flow can be divided into two classes, a class
For processing procedure mode by the gross (batch run) board, a class is monolithic processing procedure mode (single wafer run) board.Make by the gross
Journey mode (batch run) board due to have high product handling capacity and soda acid utilization rate it is adaptable to the overwhelming majority wet
Method etches field.
But existing batch run board when carrying out wet etching, generally deposit during acid-base groove processing procedure by wafer
In " first-in last-out " this shortcoming, as shown in figure 1, because wafer position in acid-base groove will not change, the half being introduced into connects
The time of tactile acid & alkali liquid is long, and the time that the half entering afterwards contacts acid & alkali liquid is short, the flatness of impact crystal column surface;Taking out
When, the half entering afterwards is first taken out, and takes out, deepened the out-of-flatness of crystal column surface further after the half being introduced into;And acid
Alkali liquor is bigger to the etch rate of crystal column surface film quality, and the impact to wafer surface flatness is bigger, and this soda acid wet method is carved
Wafer after erosion, surface smoothness is short of, and affects successive process precision and product yield.
Content of the invention
In view of above-mentioned technical problem, the present invention is intended to provide a kind of new Wet-method etching device, to balance each portion of wafer
The time of position contact acid & alkali liquid, thus improving wafer surface flatness, improve product yield further.
The present invention solve above-mentioned technical problem main technical schemes be:
A kind of Wet-method etching device improving wafer surface flatness is it is characterised in that include:
At least one acid-base groove, is used for holding acid & alkali liquid, to carry out wet etching to wafer;
Some gears, are arranged at the bottom of described acid-base groove, the tooth mouth size of described gear and the thickness of described wafer
Join, for being engaged described wafer;
Brake unit, is connected with described gear, to drive wafer rotation described in described gear driven, so that described wafer is being put
Enter and take out the time consistency of acid & alkali liquid described in each location contacts during described acid-base groove, to improve surface smoothness.
Preferably, in above-mentioned Wet-method etching device, described brake unit is connected with described gear by a trachea, to drive
Move described pinion rotation.
Preferably, in above-mentioned Wet-method etching device, described trachea passes through the bottom sidewall of described acid-base groove and described tooth
Wheel connects, and described trachea is provided with sealing ring with the junction of described acid-base groove.
Preferably, in above-mentioned Wet-method etching device, described brake unit is pneumatic braking system or electrical braking device.
Preferably, in above-mentioned Wet-method etching device, described pneumatic braking system includes:
Pneumatic control motor, is connected with described trachea, to control described pinion rotation by described trachea;
Pneumatic operated valve, and described pneumatic control motor connection, to control being turned on and off of described pneumatic control motor;
Air inlet pipe and escape pipe, are connected with described pneumatic operated valve.
Preferably, in above-mentioned Wet-method etching device, described electrical braking device is an electro-motor, with described trachea even
Connect, so that wafer rotation described in described gear driven is driven by described trachea.
Preferably, in above-mentioned Wet-method etching device, wafer described in described gear driven rotates in described acid-base groove
Angle is:180°+n×*360°;
Wherein, described n is natural number.
Preferably, in above-mentioned Wet-method etching device, the material of described gear is acid-alkali-corrosive-resisting material.
Preferably, in above-mentioned Wet-method etching device, the material of described trachea is acid-alkali-corrosive-resisting material.
Preferably, in above-mentioned Wet-method etching device, described soda acid trench bottom is additionally provided with a linkage, described some
Gear is arranged on described linkage.
Technique scheme has the advantage that or beneficial effect:A kind of raising wafer surface flatness that the present invention provides
Wet-method etching device, be mainly used in batch run board, by increasing rotatable gear in soda acid trench bottom, and adopt
Controlling the rotation of gear driven wafer with pneumatic operated valve or electrodynamic valve, balancing the time of wafer each location contacts acid & alkali liquid, thus carrying
High wafer surface flatness, improves product yield further.
Brief description
With reference to appended accompanying drawing, more fully to describe embodiments of the invention.However, appended accompanying drawing be merely to illustrate and
Illustrate, and be not meant to limit the scope of the invention.
Fig. 1 is the schematic diagram that in prior art, wafer is in the etching processing procedure of wet etching machine bench;
Fig. 2 is the structure chart of the Wet-method etching device of the present invention;
Fig. 3 is the acid-base groove cut-away view of the Wet-method etching device of the present invention;
Fig. 4 is in the schematic diagram in the etching processing procedure of the Wet-method etching device of the present invention for wafer.
Specific embodiment
In the following description, a large amount of concrete details are given to provide more thorough understanding of the invention.When
So in addition to these describe in detail, the present invention can also have other embodiment.
The Wet-method etching device of the raising wafer surface flatness of the present invention, is mainly used in processing procedure mode (batch by the gross
Run) board, including at least one acid-base groove, for holding acid & alkali liquid wafer being carried out needed for wet etching;Each acid-base groove
Bottom be provided with some rotatable gear, and the thickness matching of the tooth mouth size of gear and wafer, for being engaged wafer;System
Dynamic device, is connected with gear, and after wafer enters and is connected on the tooth mouth of gear in acid-base groove, brake unit driving gear drives
Wafer rotates, and makes the time consistency of wafer each location contacts acid & alkali liquid during being placed and taken out acid-base groove, thus improving
Surface smoothness.
Elaborate with reference to specific embodiment and accompanying drawing the present invention improved wafer surface flatness wet
Method etching device.
As shown in Fig. 2 the acid-base groove 1 of the Wet-method etching device of the present invention (Wet-method etching device of the present invention may include one
Individual or multiple acid-base grooves, in figure is to show conveniently only to illustrate one) bottom, (gear 2 can be one or many to be provided with gear 2
Individual), gear 2 passes through trachea 3 (trachea 3 may be alternatively provided as a motor, for driving gear rotation) and the system driving it to rotate
Dynamic device connects (brake unit in Fig. 2 is pneumatic braking system 4) and connects.Because trachea 3 is the bottom sidewall through acid-base groove 1
It is connected with gear 2, therefore for ensureing the sealing connecting, set in the junction (place shown in dotted line frame 30) of trachea 3 and acid-base groove 1
It is equipped with sealing ring or other parts that can be tightly connected.Specifically, pneumatic braking system 4 includes pneumatic control motor 40,
It is connected with trachea 3, to control the rotation of gear 2 by trachea 3;Pneumatic operated valve 41, is connected with pneumatic control motor 40, to control gas
Being turned on and off of dynamic controlled motor 40;Air inlet pipe 42 and escape pipe 43, are connected to pneumatic operated valve 41.
As a preferred embodiment, hold because the trachea 3 of gear 2 and control gear 2 is immersed in acid-base groove 1
Acid & alkali liquid in, the material of therefore this gear 2 and trachea 3 preferably employs the material of acid-alkali-corrosive-resisting.
As another preferred embodiment, brake unit is alternatively the dotted line frame gas in electrical braking device, namely Fig. 2
Dynamic brake unit 4 part can be replaced an electro-motor, is connected with trachea 3, to drive wafer to enter by trachea 3 driving gear 2
Row rotation.
Concrete structure in acid-base groove 1 for the gear 2 is as shown in figure 3, gear 2 can be arranged at acid-base groove by linkage 20
1 bottom;The tooth mouth of gear is used for being engaged wafer 10, and it is according to gear 2 and wafer that the rotation of its middle gear 2 leads to wafer 10 rotation
The friction debugging at 10 edges, concrete debugging can be according to brilliant 10 sizes, the tooth mouth size of gear 2 and the circular flow of acid & alkali liquid
Debugged etc. parameter.Brake unit according to specific process parameter, can control rotating speed and the rotating cycle of gear 2.Excellent
Choosing, for ensureing the time consistency of crystal column surface various pieces contact acid & alkali liquid, gear 2 drives wafer 10 to rotate in acid-base groove
Angle be:180°+n×*360°;Wherein n is natural number;Namely wafer 10 can rotate 180 ° in acid & alkali liquid and add several
Whole circle.
When wafer is in during the wet method processing procedure of reality, as shown in figure 4, with the labelling angle on wafer for minimum point being
Example by delivery pipe (not shown), wafer 10 is sent in acid-base groove 1, because feeding process needs the regular hour, therefore this
The time that the bottom indicia angle part of Shi Jingyuan 10 contacts acid & alkali liquid is the longest;After wafer 10 is totally submerged in acid & alkali liquid, system
Dynamic device controls pinion rotation, and to drive wafer 10 to be rotated, the angle of wafer 10 rotation is preferably 180 °, or 180 ° add
Upper some circles.When completing wet etching processing procedure and taking out wafer 10, because wafer 10 have rotated 180 °, now labelling angle is in crystalline substance
The peak of circle 10, namely take out at first, and the part being finally putting into when putting into now finally is taken out, because putting into speed and taking-up
Speed is consistent, then the time of each location contacts to the acid & alkali liquid on postrotational wafer 10 can be consistent, thus ensure that
The surface smoothness of wafer 10 is it is ensured that the precision of successive process, and then further increases product yield.
In sum, the Wet-method etching device of a kind of raising wafer surface flatness that the present invention provides, by soda acid
Trench bottom increases rotatable gear, and controls the rotation of gear driven wafer using pneumatic operated valve or electrodynamic valve, to balance put into and
The time of wafer each location contacts acid & alkali liquid during taking-up, thus improving wafer surface flatness, improve product further good
Rate.
For a person skilled in the art, after reading described above, various changes and modifications undoubtedly will be evident that.
Therefore, appending claims should regard whole variations and modifications of the true intention covering the present invention and scope as.In power
In the range of sharp claim, any and all scope of equal value and content, are all considered as still belonging to the intent and scope of the invention.