CN106406023A - Method for repairing defect in mask template picture by secondary exposure technology - Google Patents
Method for repairing defect in mask template picture by secondary exposure technology Download PDFInfo
- Publication number
- CN106406023A CN106406023A CN201610959557.7A CN201610959557A CN106406023A CN 106406023 A CN106406023 A CN 106406023A CN 201610959557 A CN201610959557 A CN 201610959557A CN 106406023 A CN106406023 A CN 106406023A
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- China
- Prior art keywords
- defect
- mask plate
- expose
- substrate
- area
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention discloses a method for repairing defect in a mask template picture by a secondary exposure technology. The method comprises steps of (a) evenly coating an optical cement protecting layer at a mask template with metal residual defect; (b) selecting an exposure zone at the defect and obtaining exposure data, and performing a secondary exposure on a substrate; (c) obtaining a new picture in the selected zone through a developing process and covering an original picture; (d) removing a metal layer without optical cement protection through an etching process; (e) degumming and removing the mask template. The repair method can be completed only by existed technical devices instead of a specific repair device, and the repair method is convenient to operate and able to effectively remove a large area of metal residues in the picture zone; thus pressure of repairing a drilling crew is largely reduced, and the secondary exposure is carried out specific to a specific defect zone; therefore, the method largely accelerates the secondary exposure speed, reduces the scrapping rate of the substrate, and saves the substrate.
Description
Technical field
The present invention relates to a kind of defect mending method, especially a kind of integrated circuit metal residual in mask plate graph area
Defect mending method, belongs to ic manufacturing technology field.
Background technology
Manufacture field in semiconductor integrated circuit, photoetching process is the important skill forming circuit pattern on semiconductor die garden
Art.In the higher large scale integrated circuit of less more complicated integrated level, more advanced photoetching technique is needed to produce less line
Wide (CD) and fine pattern.In photoetching process, need to use a kind of template figure to be transferred and replicates, this template claims
Be optical mask plate (also known as light shield, hereafter referred to collectively as mask plate).Mask plate is the knob connecting between Chevron Research Company (CRC) and the manufacture of brilliant garden
Band.Maskless lithography also cannot be realized, therefore mask plate is more to close in IC manufacturing in current brilliant garden processing technology
One ring of key.
The main Making programme of mask substrate is to expose, develop, etching, removing photoresist, detecting etc. it would be desirable to detecting
Defect repaired, the Crack cause of defect is a lot, wherein falls into granule in technical process and can cause large-area metal
Residual, if large-area metal residual falls in graph area, then be likely to lead to substrate to be scrapped.
At present, repairing machine is the capital equipment of defect repair.The method that industry repairs defect is mainly laser beam and electronics
The high-energy quick mask plate surface metal residual of bundle (or ion beam), can quickly remove surface defect.But work as metal
Revolution mark is larger, can increase the pressure repairing board or even the powerless repairing of board.
Content of the invention
Present invention aim to address in the large-area metal residual in mask substrate surfacial pattern area, and using repairing machine
Through cannot be carried out the defect effectively repaired and lead to substrate to be scrapped, provide a kind of means to save the situation.
The scheme providing according to the present invention, a kind of method for repairing and mending of the mask plate graph area metal residual of integrated circuit,
Comprise the steps：
(a), will appear from the mask plate even spread light compound protective layer of metal residual defect；
(b), select exposure area in fault location and obtain exposure data, re-expose is carried out to substrate；
(c), new figure is obtained in selection area by developing process and covers original figure；
(d), pass through etch process, the metal level not having optical cement protection is removed；
(e), mask plate is removed photoresist and is cleaned.
Further, in described step (a), using spraying roasting mode coating light compound protective layer, baking temperature be 95 DEG C～
150 DEG C, baking time is 25～30 minutes, and the thickness of light compound protective layer is 440～480nm.
Further, carried out on defect area using the exposure machine with re-expose function in described step (b) secondary
Exposure.
Further, in described step (c), reacted using the optical cement in developer solution and exposure area, new figure is occurred
Shape and cover artwork shape.
Further, in described step (d), being removed using etching solution does not have the metal level of optical cement protection on substrate.
Further, the cleaning step in described step (e) includes：
(1), with H2SO4And H2O2Mixed solution is tentatively cleaned, and the time is 10～15 minutes；
(2), with ammonia, H2O2The mixed solution being formed with clear water is cleaned again, and the time is 10～15 minutes；
(3), using clear water, substrate and metal level are finally cleaned.
Advantages of the present invention：
1st, this method for repairing and mending does not need special repair apparatus, can only rely on existing process equipment and complete, easy to operate,
Large-area metal residual in graph area effectively can be removed；
2nd, greatly reduce the pressure repairing board, and re-expose is carried out just for specified defect region, therefore
Greatly accelerate re-expose speed；
3rd, decrease substrate scrappage, save substrate.
Brief description
Accompanying drawing is used for providing a further understanding of the present invention, and constitutes a part for description, the reality with the present invention
Apply example and be used for explaining the present invention together, be not construed as limiting the invention.
Fig. 1 is the structural representation of the mask plate of appearance metal residual defect before being coated with light compound protective layer；
Fig. 2 is the structural representation of the mask plate after optical cement is protected in coating；
Fig. 3 is the structural representation of the mask plate after re-expose；
Fig. 4 is the structural representation of mask plate after development；
Fig. 5 is the structural representation of the mask plate removing optical cement metacoxal plate；
Description of reference numerals:1 quartz glass, 2 metal levels, 3 metal residuals, 4 protection optical cements.
Specific embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are illustrated it will be appreciated that preferred reality described herein
Apply example to be merely to illustrate and explain the present invention, be not intended to limit the present invention.
Embodiment
A kind of method that utilization re-expose technology repairs defect in mask plate graph area, comprises the following steps：
(a), will appear from the mask plate even spread light compound protective layer of metal residual defect, baking temperature is 95 DEG C～150
DEG C, baking time is 25～30 minutes, and the thickness of light compound protective layer is 440～480nm；Before Fig. 1 is coating light compound protective layer
The structural representation of the mask plate of metal residual defect occurs, Fig. 2 is the structural representation of the mask plate after optical cement is protected in coating；
(b), select exposure area in fault location and process and obtain exposure data, using our company, there is re-expose work(
The exposure bench of energy carries out re-expose to substrate；Fig. 3 is the structural representation of the mask plate after re-expose；
(c), new figure is obtained in selection area by developing process and covers original figure, using developer solution and
Optical cement in exposure area is reacted, and new figure and covers artwork shape；Fig. 4 is that the structure of mask plate is shown after development
It is intended to；
(d), pass through etch process, the metal level not having optical cement protection is removed, being removed using etching solution is not had on substrate
The metal level of optical cement protection；Fig. 5 is the structural representation of the mask plate removing optical cement metacoxal plate；
(e), mask plate is removed photoresist and is cleaned.Cleaning step is as follows：
(1), with H2SO4And H2O2Mixed solution is tentatively cleaned, and the time is 10～15 minutes；
(2), with ammonia, H2O2The mixed solution being formed with clear water is cleaned again, and the time is 10～15 minutes；
(3), using clear water, substrate and metal level are finally cleaned.
Finally it should be noted that：The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention,
Although being described in detail to the present invention with reference to the foregoing embodiments, for a person skilled in the art, it still may be used
To modify to the technical scheme described in foregoing embodiments, or equivalent is carried out to wherein some technical characteristics.
All any modification, equivalent substitution and improvement within the spirit and principles in the present invention, made etc., should be included in the present invention's
Within protection domain.
Claims (6)
1. a kind of method that utilization re-expose technology repairs defect in mask plate graph area, is characterized in that, comprise the steps：
(a), will appear from the mask plate even spread light compound protective layer of metal residual defect；
(b), select exposure area in fault location and obtain exposure data, re-expose is carried out to substrate；
(c), new figure is obtained in selection area by developing process and covers original figure；
(d), pass through etch process, the metal level not having optical cement protection is removed；
(e), mask plate is removed photoresist and is cleaned.
2. the method that utilization re-expose technology according to claim 1 repairs defect in mask plate graph area, its feature
It is that, in described step (a), using spraying roasting mode coating light compound protective layer, baking temperature is 95 DEG C～150 DEG C, during baking
Between be 25～30 minutes, the thickness of light compound protective layer is 440～480nm.
3. the method that utilization re-expose technology according to claim 1 and 2 repairs defect in mask plate graph area, it is special
Levying is, carries out re-expose using the exposure machine with re-expose function in described step (b) on defect area.
4. the method that utilization re-expose technology according to claim 1 repairs defect in mask plate graph area, its feature
It is, in described step (c), to be reacted using the optical cement in developer solution and exposure area, new figure occurs and covers former
Figure.
5. the method that utilization re-expose technology according to claim 1 repairs defect in mask plate graph area, its feature
It is that, in described step (d), being removed using etching solution does not have the metal level of optical cement protection on substrate.
6. the method that utilization re-expose technology according to claim 3 repairs defect in mask plate graph area, its feature
It is that the cleaning step in described step (e) includes：
(1), with H2SO4And H2O2Mixed solution is tentatively cleaned, and the time is 10～15 minutes；
(2), with ammonia, H2O2The mixed solution being formed with clear water is cleaned again, and the time is 10～15 minutes；
(3), using clear water, substrate and metal level are finally cleaned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610959557.7A CN106406023A (en) | 2016-10-27 | 2016-10-27 | Method for repairing defect in mask template picture by secondary exposure technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610959557.7A CN106406023A (en) | 2016-10-27 | 2016-10-27 | Method for repairing defect in mask template picture by secondary exposure technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106406023A true CN106406023A (en) | 2017-02-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610959557.7A Pending CN106406023A (en) | 2016-10-27 | 2016-10-27 | Method for repairing defect in mask template picture by secondary exposure technology |
Country Status (1)
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| CN (1) | CN106406023A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111435218A (en) * | 2019-01-11 | 2020-07-21 | 中芯国际集成电路制造(上海)有限公司 | Method for repairing defects of photoetching mask and photoetching mask |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1573557A (en) * | 2003-05-08 | 2005-02-02 | 台湾积体电路制造股份有限公司 | Method for removing shading defects of light mask and semiconductor device manufacturing method thereof |
| CN101916039A (en) * | 2010-07-16 | 2010-12-15 | 深圳清溢光电股份有限公司 | Manufacturing method of mask plate |
| CN102890432A (en) * | 2012-10-11 | 2013-01-23 | 深圳清溢光电股份有限公司 | Mask plate manufacturing method by additively exposing figure |
| CN102929459A (en) * | 2012-09-24 | 2013-02-13 | 晟光科技股份有限公司 | Method for manufacturing metal electrode of capacitive touch screen with small number of metal spot residues |
| CN103698970A (en) * | 2013-12-19 | 2014-04-02 | 无锡中微掩模电子有限公司 | Metal residue defect repairing method of mask plate for integrated circuit |
-
2016
- 2016-10-27 CN CN201610959557.7A patent/CN106406023A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1573557A (en) * | 2003-05-08 | 2005-02-02 | 台湾积体电路制造股份有限公司 | Method for removing shading defects of light mask and semiconductor device manufacturing method thereof |
| CN101916039A (en) * | 2010-07-16 | 2010-12-15 | 深圳清溢光电股份有限公司 | Manufacturing method of mask plate |
| CN102929459A (en) * | 2012-09-24 | 2013-02-13 | 晟光科技股份有限公司 | Method for manufacturing metal electrode of capacitive touch screen with small number of metal spot residues |
| CN102890432A (en) * | 2012-10-11 | 2013-01-23 | 深圳清溢光电股份有限公司 | Mask plate manufacturing method by additively exposing figure |
| CN103698970A (en) * | 2013-12-19 | 2014-04-02 | 无锡中微掩模电子有限公司 | Metal residue defect repairing method of mask plate for integrated circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111435218A (en) * | 2019-01-11 | 2020-07-21 | 中芯国际集成电路制造(上海)有限公司 | Method for repairing defects of photoetching mask and photoetching mask |
| CN111435218B (en) * | 2019-01-11 | 2023-10-20 | 中芯国际集成电路制造(上海)有限公司 | Method for repairing defects of lithography mask and lithography mask |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170215 |
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| RJ01 | Rejection of invention patent application after publication |